CN104104220A - Intelligent power module - Google Patents
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Abstract
The invention is applicable to the field of power driving control and provides an intelligent power module. In the intelligent power module, single-phase driving circuits, each of which includes a first current detection unit, a second current detection unit, a signal monitoring unit and a time delay unit, are adopted. The first current detection units and the second current detection units detect output currents of IGBTs Q1 of upper bridge arms and output currents of IGBTs Q2 of lower bridge arms respectively. When the IGBTs Q2 are not switched off, the signal monitoring units convert upper-bridge-arm input signals which undergo filtering processing into low levels which pass level conversion units and high-voltage-area signal adjustment units and drive first driving units to control the IGBTs Q1 to switch off so that a condition that the IGBTs Q1 and the IGBTs Q2 are switched on at the same time does not happen and thus a probability that the intelligent power module fails because of overcurrent breakdown is reduced, prolonging of the service life of the intelligent power module is facilitated and security of the intelligent power module is ensured.
Description
Technical field
The invention belongs to power drive control field, relate in particular to a kind of Intelligent Power Module.
Background technology
Intelligent Power Module (IPM, Intelligent Power Module) is the power drive series products of a kind of combination power electronic technology and integrated circuit technique.Intelligent Power Module integrates device for power switching and high-voltage driving circuit, and is built-in with overvoltage, overcurrent and the failure detector circuit such as overheated.Intelligent Power Module by receiving the control signal of MCU and driving subsequent conditioning circuit to work, feeds back to MCU by the state detection signal of system again on the one hand on the other hand.Compare with the discrete scheme of tradition, Intelligent Power Module wins increasing market with advantages such as its high integration, high reliability, being particularly suitable for frequency converter and the various inverter of drive motors, is the desirable power electronic device for frequency control, metallurgical machinery, electric traction, servo-drive and frequency-conversion domestic electric appliances.
The structure of existing Intelligent Power Module as shown in Figure 1, Intelligent Power Module consists of three single-phase driving circuits, these three single-phase driving circuits are respectively used to export U electricity, V electricity and W electricity mutually mutually mutually, each single-phase driving circuit contains a upper brachium pontis input and a lower brachium pontis input, and has an output.Upper brachium pontis input, lower brachium pontis input and the output of the U single-phase driving circuit 101 that electricity is corresponding are mutually respectively HIN1, LIN1 and U, upper brachium pontis input, lower brachium pontis input and the output of the V single-phase driving circuit 102 that electricity is corresponding are mutually respectively HIN2, LIN2 and V, and upper brachium pontis input, lower brachium pontis input and the output of the W single-phase driving circuit 103 that electricity is corresponding are mutually respectively HIN3, LIN3 and W.Because the structure of three above-mentioned single-phase driving circuits is identical, so Fig. 1 only shows for exporting the W internal structure of the single-phase driving circuit 103 of electricity mutually.In single-phase driving circuit 103, the first input circuit 104 and the second input circuit 108 are for the input signal S to upper brachium pontis input HIN3 respectively
hIN3input signal S with lower brachium pontis input LIN3
lIN3carry out filtering, and export respectively and S
hIN3and S
lIN3synchronous signal.Level shifting circuit 105 is exported after importing the low-pressure area signal of the output signal of the first input circuit 104 into higher-pressure region, and output signal is identical with the phase place of the output signal of the first input circuit 104.Higher-pressure region signal adjustment circuit 106 compensates rear output for the higher-pressure region signal to the output signal of level shifting circuit 105, the width of output signal and S
hIN3width identical, the phase place of output signal and S
hIN3single spin-echo.Drive circuit 107 is for generating the output signal with current driving ability according to the output signal of higher-pressure region signal adjustment circuit 106, the width of the width of this output signal and the output signal of higher-pressure region signal adjustment circuit 106 identical and single spin-echo, the i.e. width of the output signal of drive circuit 107 and phase place and S
hIN3width identical with phase place.The structure of drive circuit 112 is identical with drive circuit 107.Due to S
hIN3need to could arrive drive circuit 107 through the first input circuit 104, level shifting circuit 105, higher-pressure region signal adjustment circuit 106, and S
lIN3on residing path, do not have level shifting circuit 105 and higher-pressure region signal adjustment circuit 106, so, in order to make S
hIN3and S
lIN3arrive respectively the time consistency of drive circuit 107 and drive circuit 112, need between the second input circuit 108 and drive circuit 112, add delay circuit 117, delay circuit 117 is comprised of PMOS pipe 109, NMOS pipe 110 and electric capacity 111, the time that so just can make both arrive respectively drive circuit 107 and drive circuit 112 is consistent, thereby makes S
hIN3arrive time and S that A is ordered
lIN3the time that arrival B is ordered is identical.As shown in Figure 2, S
hIN3rising edge arrive the time T 1 that A orders and equal S
lIN3rising edge arrive the time T 2 that B is ordered, S
hIN3trailing edge arrive the time T 3 that A orders and equal S
lIN3trailing edge arrive the time T 4 that B is ordered, because whole circuit is usually designed to the undistorted transmission of signal, S
hIN3deration of signal T5 equal the deration of signal T6 that A is ordered, S
lIN3deration of signal T7 equal the deration of signal T8 that B is ordered, thereby obtain T1=T2=T3=T4.
As can be seen from Figure 2, by theory, S
hIN3with S
lIN3after arriving respectively A point and B point, at different time, drive IGBT pipe 113 and IGBT to manage 114 conductings, IGBT pipe 113 and IGBT pipe 114 are not conductings simultaneously, so just can avoid both conductings simultaneously and produce huge transient current.Yet, from practical application, because IGBT pipe exists smearing, so the single-phase driving circuit in above-mentioned existing Intelligent Power Module can exist the risk that produces huge transient current in the course of the work.As shown in Figure 3, work as S
hIN3rising edge and S
lIN3trailing edge while simultaneously arriving, when producing rising edge, A point can produce trailing edge at B point, IGBT pipe 113 becomes conducting from cut-off, IGBT pipe 114 becomes cut-off from conducting, but because the existence of IGBT pipe smearing, IGBT pipe 114 becomes the chronic of cut-off from conducting, and the time that IGBT pipe 113 becomes conducting from cut-off is very short, at IGBT pipe 114 during still in turn on process, IGBT manages 113 conductings completely, like this, just there is the moment of a conducting simultaneously in IGBT pipe 113 and IGBT pipe 114, this can make from P point by IGBT manage 113 and IGBT pipe 114 these paths to ground produce a current impulse PWG, the duration of this current impulse is relevant with the hangover time of IGBT pipe 114, the hangover time of IGBT pipe 114 is longer, the duration of current impulse is just longer, and the peak value of this current impulse size is relevant with the conduction impedance of IGBT pipe 113 and IGBT pipe 114, conduction impedance is less, the peak value of this current impulse is larger.If the IGBT pipe range phase is subject to the effect of current impulse, can greatly reduce the life-span of IGBT pipe, if the peak value of current impulse is excessive or the duration is long, more can cause the moment of IGBT pipe to burn, whole Intelligent Power Module can be out of control, and then cause the chain of subsequent conditioning circuit to burn, also can breaking out of fire when serious and produce great potential safety hazard.
Although stipulated the upper brachium pontis input that user is same phase and the time interval that lower brachium pontis input applies signal in the specifications of existing Intelligent Power Module, to avoid occurring the problems referred to above, but in actual use, even if user has followed this regulation when writing the program that drives Intelligent Power Module, but because the environment for use of Intelligent Power Module itself is more severe, the voltage noise of input also makes upper and lower bridge arm mislead most probably, thereby produce current impulse as described in Figure 3, and and then cause Intelligent Power Module to burn blast.In addition, aging along with IGBT pipe, its smearing can be day by day serious, even can surpass specifications official hour interval, thereby cause Intelligent Power Module after the use through the long period, the failure phenomenon that as easy as rolling off a log generation overcurrent punctures.
In sum, the conducting simultaneously of the easy pipe of the IGBT because of upper and lower bridge arm of existing Intelligent Power Module existence causes whole Intelligent Power Module damage to be burnt, and the problem of the further initiation fire of possibility.
Summary of the invention
The object of the present invention is to provide a kind of Intelligent Power Module, be intended to solve the conducting simultaneously of the existing easy pipe of the IGBT because of upper and lower bridge arm of existing Intelligent Power Module and cause whole Intelligent Power Module damage to be burnt, and the problem of the further initiation fire of possibility.
The present invention realizes like this, a kind of Intelligent Power Module, comprise three single-phase driving circuits, the U that described three single-phase driving circuits are exported respectively in three-phase alternating current is electric mutually, V mutually electricity is electric mutually with W, each single-phase driving circuit in described three single-phase driving circuits comprises the first input unit, level conversion unit, higher-pressure region signal adjustment unit, the first driver element, the second input unit, the second driver element, IGBT manages Q1, fast recovery diode D1, IGBT pipe Q2 and fast recovery diode D2, described the first input unit and described the second input unit carry out filtering to upper brachium pontis input signal and lower brachium pontis input signal respectively, described level conversion unit is exported after importing the low-pressure area signal in the output signal of described the first input unit into higher-pressure region, and export described the first driver element to after compensating processing by described higher-pressure region signal adjustment unit, described the first driver element and described the second driver element generate respectively there is current driving ability pulse signal to control the break-make of described IGBT pipe Q1 and described IGBT pipe Q2, the drain electrode access high voltage of described IGBT pipe Q1, the anode of described fast recovery diode D1 is connected respectively with negative electrode source electrode and the drain electrode that described IGBT manages Q1, the source electrode of described IGBT pipe Q1 and the common contact of the drain electrode of described IGBT pipe Q2 export described U mutually electricity, described V mutually electricity or described W electric mutually, the source ground of described IGBT pipe Q2, the anode of described fast recovery diode D2 is connected respectively with negative electrode source electrode and the drain electrode that described IGBT manages Q2,
Described single-phase driving circuit also comprises:
The first current detecting unit, the first test side is connected respectively the source electrode of described IGBT pipe Q1 and the drain electrode that described IGBT manages Q2 with the second test side, for the output current of the drain electrode of described IGBT pipe Q1 is detected, and exports accordingly the first detection signal; Described the first detection signal is low level when described IGBT pipe Q1 turn-offs, and described the first detection signal is low level or high level when described IGBT pipe Q1 conducting;
The second current detecting unit, the first test side is connected respectively with the second test side source electrode and the ground that described IGBT manages Q2, for the output current of the drain electrode of described IGBT pipe Q2 is detected, and exports accordingly the second detection signal; Described the second detection signal is low level when described IGBT pipe Q2 turn-offs, and described the second detection signal is high level when described IGBT pipe Q2 conducting;
Signal monitoring unit, signal input part connects the output of described the first input unit, the first detection signal input is connected respectively the output of described the first current detecting unit and the output of described the second current detecting unit with the second detection signal input, for when described the first detection signal and/or described the second detection signal are low level, export the output signal of described the first input unit to described level conversion unit, when described the first detection signal and described the second detection signal are high level, the output signal of described the first input unit is converted to low level output to described level conversion unit,
Delay unit, input is connected respectively the output of described the second input unit and the input of described the second driver element with output, for the output signal of described the second input unit is carried out to time delay output so that the output signal of described the second input unit to arrive the time that the time of described the second driver element and the output signal of described the first input unit arrive described the first driver element by described signal monitoring unit, described level conversion unit and described high voltage region signal adjustment unit identical.
The present invention by adopting and comprise the first current detecting unit in Intelligent Power Module, the second current detecting unit, the single-phase driving circuit of signal monitoring unit and delay unit, by the first current detecting unit and the second current detecting unit, respectively the output current of the IGBT pipe output current of Q1 of upper brachium pontis and the IGBT of lower brachium pontis pipe Q2 is detected, by signal monitoring unit, the upper brachium pontis input signal of processing being after filtering converted to low level when IGBT pipe Q2 does not turn-off drives the first driver element control IGBT pipe Q1 to turn-off through level conversion unit and higher-pressure region signal adjustment unit, and then make IGBT pipe Q1 and IGBT pipe Q2 there will not be the situation of conducting simultaneously, reduce the probability that Intelligent Power Module lost efficacy because overcurrent punctures, contribute to extend the useful life of Intelligent Power Module, guaranteed the fail safe of Intelligent Power Module, having solved the conducting simultaneously of the existing easy pipe of the IGBT because of upper and lower bridge arm of existing Intelligent Power Module causes whole Intelligent Power Module damage to be burnt, and the problem of the further initiation fire of possibility.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the related Intelligent Power Module of prior art;
Fig. 2 is the signal waveforms in the related Intelligent Power Module of prior art;
Fig. 3 is another signal waveforms in the related Intelligent Power Module of prior art;
Fig. 4 is the schematic configuration diagram of the Intelligent Power Module that comprises single-phase driving circuit that provides of the embodiment of the present invention;
Fig. 5 is the exemplary circuit structure of the Intelligent Power Module that comprises single-phase driving circuit that provides of the embodiment of the present invention.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
The embodiment of the present invention by adopting and comprise the first current detecting unit in Intelligent Power Module, the second current detecting unit, the single-phase driving circuit of signal monitoring unit and delay unit, by the first current detecting unit and the second current detecting unit, respectively the output current of the IGBT pipe output current of Q1 of upper brachium pontis and the IGBT of lower brachium pontis pipe Q2 is detected, by signal monitoring unit, the upper brachium pontis input signal of processing being after filtering converted to low level when IGBT pipe Q2 does not turn-off drives the first driver element control IGBT pipe Q1 to turn-off through level conversion unit and higher-pressure region signal adjustment unit, and then make IGBT pipe Q1 and IGBT pipe Q2 there will not be the situation of conducting simultaneously, reduce the probability that Intelligent Power Module lost efficacy because overcurrent punctures, contribute to extend the useful life of Intelligent Power Module, guaranteed the fail safe of Intelligent Power Module.
Fig. 4 shows the schematic construction of the Intelligent Power Module that comprises single-phase driving circuit that the embodiment of the present invention provides, and for convenience of explanation, only shows part related to the present invention, and details are as follows:
The Intelligent Power Module that the embodiment of the present invention provides comprises three single-phase driving circuits, these three single-phase driving circuits are exported respectively U in three-phase alternating current electricity, V electricity and W electricity mutually mutually mutually, and each single-phase driving circuit in three single-phase driving circuits comprises the first input unit, level conversion unit, higher-pressure region signal adjustment unit, the first driver element, the second input unit, the second driver element, IGBT pipe Q1, fast recovery diode D1, IGBT pipe Q2 and fast recovery diode D2; Because the structure of three single-phase driving circuits is identical, so only figure 4 illustrates for export W mutually electricity single-phase driving circuit 300, and for export U mutually electricity single-phase driving circuit 100 with for export V mutually electricity single-phase driving circuit 200 only with block diagram form, illustrate.
The single-phase driving circuit 300 of take below describes the embodiment of the present invention as example:
Single-phase driving circuit 300 comprises the first input unit 301, level conversion unit 302, higher-pressure region signal adjustment unit 303, the first driver element 304, the second input unit 305, the second driver element 306, IGBT pipe Q1, fast recovery diode D1, IGBT pipe Q2 and fast recovery diode D2, and the first input unit 301 and the second input unit 305 are respectively to upper brachium pontis input signal S
hIN3with lower brachium pontis input signal S
lIN3carry out filtering, level conversion unit 302 is exported after importing the low-pressure area signal in the output signal of the first input unit 301 into higher-pressure region, and by higher-pressure region signal adjustment unit 303 compensate export to after processing the first driver element 304, the first driver elements 304 and the second driver element 306 generate respectively there is current driving ability pulse signal to control the break-make of IGBT pipe Q1 and IGBT pipe Q2.The drain electrode access high voltage VP of IGBT pipe Q1, the anode of fast recovery diode D1 is connected respectively with negative electrode source electrode and the drain electrode that IGBT manages Q1, the common contact output W of the source electrode of IGBT pipe Q1 and the drain electrode of IGBT pipe Q2 mutually electricity (exports U electric mutually in single-phase driving circuit 100, in single-phase driving circuit 200, export V electricity mutually), the source ground of IGBT pipe Q2, the anode of fast recovery diode D2 is connected respectively with negative electrode source electrode and the drain electrode that IGBT manages Q2.
Single-phase driving circuit 300 also comprises:
The first current detecting unit 307, the first test sides are connected respectively the source electrode of IGBT pipe Q1 and the drain electrode that IGBT manages Q2 with the second test side, for the output current of the drain electrode of IGBT pipe Q1 is detected, and export accordingly the first detection signal; The first detection signal is low level when IGBT pipe Q1 turn-offs, and the first detection signal is low level or high level when IGBT pipe Q1 conducting;
The second current detecting unit 308, the first test sides are connected respectively with the second test side source electrode and the ground that IGBT manages Q2, for the output current of the drain electrode of IGBT pipe Q2 is detected, and export accordingly the second detection signal; The second detection signal is low level when IGBT pipe Q2 turn-offs, and the second detection signal is high level when IGBT pipe Q2 conducting;
Signal monitoring unit 309, signal input part connects the output of the first input unit 301, the first detection signal input is connected respectively the output of the first current detecting unit 307 and the output of the second current detecting unit 308 with the second detection signal input, for when the first detection signal and/or the second detection signal are low level, export the output signal of the first input unit 301 to level conversion unit 302, when the first detection signal and the second detection signal are high level, the output signal of the first input unit 301 is converted to low level output to level conversion unit 302,
Delay unit 310, input is connected respectively the output of the second input unit 305 and the input of the second driver element with output, for the output signal of the second input unit 305 is carried out to time delay output so that the output signal of the second input unit 305 to arrive the time that the time of the second driver element 306 and the output signal of the first input unit 301 arrive the first driver elements 304 by signal monitoring unit 309, level conversion unit 302 and high voltage region signal adjustment unit 303 identical.
If IGBT pipe Q2 is in off state, the first current detecting unit 307 and the second current detecting unit 308 can not detect electric current, both export high level simultaneously, signal monitoring circuit 309 is by the output signal output of the first input unit 301, and arrive the grid of IGBT pipe Q2, and then control normally opening and turn-offing of IGBT pipe Q1 through level conversion unit 302, higher-pressure region signal adjustment unit 303, the first driver element 304.
If IGBT pipe Q2 is not in off state (comprise normally or transit to from conducting the process of shutoff), the first current detecting unit 307 and the second current detecting unit 308 can detect electric current, and output low level simultaneously, now, and S no matter
hIN3by rear the exported signal of the first input circuit 301, be high level or low level, signal monitoring circuit 309 all can output low level, this low level is similarly low level after the grid that arrives IGBT pipe Q2 through level conversion unit 302, higher-pressure region signal adjustment unit 303, the first driver element 304, this low level is turn-offed IGBT pipe Q1, and then make IGBT manage Q1 remain off state when IGBT pipe Q2 does not turn-off completely, to avoid occurring current impulse, guarantee the fail safe in the Intelligent Power Module course of work.
Fig. 5 shows the exemplary circuit structure of the Intelligent Power Module that comprises single-phase driving circuit that the embodiment of the present invention provides, and for convenience of explanation, only shows part related to the present invention, and details are as follows:
As one embodiment of the present invention, the first current detecting unit 307 comprises resistance R 1 and comparator U1, the common contact of the in-phase input end of the first end of resistance R 1 and comparator U1 is the first test side of the first current detecting unit 307, the common contact of the second end of resistance R 1 and the inverting input of comparator U1 is the second test side of the first current detecting unit 307, and the output of comparator U1 is the output of the first current detecting unit 307.
As one embodiment of the present invention, the second current detecting unit 308 comprises resistance R 2 and comparator U2, the common contact of the in-phase input end of the first end of resistance R 2 and comparator U2 is the first test side of the second current detecting unit 308, the common contact of the second end of resistance R 2 and the inverting input of comparator U2 is the second test side of the second current detecting unit 308, and the output of comparator U2 is the output of the second current detecting unit 308.
As one embodiment of the present invention, signal monitoring unit 309 comprises:
NOR gate U3, NAND gate U4 and not gate U5;
The first input end 1 of NOR gate U3 and the second input 2 are respectively the first detection signal input and the second detection signal input of signal monitoring unit 309, the output 3 of NOR gate U3 connects the first input end 1 of NAND gate U4, the second input 2 of NAND gate U4 is the signal input part of signal monitoring unit 309, the output 3 of NAND gate U4 connects the input of not gate U5, and the output of not gate U5 is the output of signal monitoring unit 309.
As one embodiment of the present invention, delay unit 310 comprises:
Not gate U6, not gate U7, NMOS pipe Q3, current source I1 and capacitor C 1;
The input of not gate U6 is the input of delay unit 310, the input of not gate U7 is connected respectively the output of not gate U6 and the grid of NMOS pipe Q3 with output, the formed contact altogether of first end of the NMOS pipe drain electrode of Q3 and the output of current source I1 and capacitor C 1 is the output of delay unit 310, the input termination low-voltage dc power supply VCC(output voltage of current source I1 is 15V), substrate and the source electrode of the second end of capacitor C 1 and NMOS pipe Q3 are connected to ground altogether.
Below in conjunction with operation principle, above-mentioned single-phase driving circuit 300 is described further:
If the electric current that IGBT pipe Q2 flows through when normally is I, the reversal voltage of comparator U1 and comparator U2 is all VB, and the voltage at resistance R 1 and resistance R 2 two ends is respectively U1 and U2.
Situation one: when IGBT pipe Q2 normally, the voltage at resistance R 1 two ends and resistance R 2 two ends is respectively:
U1=R1×I
U2=R2×I
U1 and U2 are much larger than VB, so comparator U1 and comparator U2 output high level (the first detection signal and the second detection signal are high level), NOR gate U3 output low level, the first input end 1 of NAND gate U4 is input as low level, which kind of signal what no matter the second input 2 of NAND gate U4 was inputted is, NAND gate U4 all exports high level, this high level transfers low level output to after not gate U5, and this low level is controlled IGBT pipe Q1 by level conversion unit 302, higher-pressure region signal adjustment unit 303 and the first driver element 304 and turn-offed.So, when IGBT pipe Q2 normally, even S
hIN3occur high level, this high level also cannot pass through signal monitoring circuit 309, and IGBT pipe Q1 can conducting, so just can guarantee IGBT manage Q1 and IGBT manage Q2 can while conducting.
Situation two: when IGBT pipe Q2 normal turn-off, the electric current of managing Q1 and IGBT pipe Q2 this path (herein referred to as PWG path) extremely by IGBT from P point is close to zero, U1 and U2 are also close to 0, so comparator U1 and the equal output low level of comparator U2, NOR gate U3 will export high level, if the second input 2 input low levels (or high level) of NAND gate U4, NAND gate U4 can export high level (or low level), then by not gate U5 output low level (or high level), the output signal that is NAND gate U4 is identical with the pulse duration of the output signal of the first input unit 301, single spin-echo, and the signal of exporting after not gate U5 carries out logic NOT processing will be all identical with pulse duration and the phase place of the output signal of the first input unit 301, that is to say, now signal monitoring unit 309 is actually to the output signal of the first input unit 301 is maintained output and do not do any change.So, when IGBT pipe Q2 normal turn-off, S
hIN3can normally pass through the first input unit 301, signal monitoring circuit 209, level conversion unit 302, higher-pressure region signal adjustment unit 303 and the first driver element 304 and control the break-make of IGBT pipe Q1.
Situation three: when IGBT pipe Q2 is in from opening to the process of shutoff, the electric current on PWG path is reduced to zero gradually from I, supposes at certain in a flash, and electric current is Im, and the both end voltage U2 of the both end voltage U1 of resistance R 1 and resistance R 2 is respectively:
U1=R1×Im
U2=R2×Im
When U1 or U2 are greater than VB, the IGBT pipe Q1 being equal in aforesaid " situation one " turn-offs, the situation of IGBT pipe Q2 conducting, described IGBT pipe 213 can keep off state, only have the U1 of working as and U2 to be less than VB simultaneously, be just equal to aforesaid " situation two ", IGBT pipe Q1 can be by S
hIN3control and realize break-make.
In actual applications, in order to reduce the power consumption in resistance R 1 and resistance R 2, resistance R 1 can consider to adopt the resistance of 10m Ω or less resistance, and the resistance of resistance R 2 should be twice than the resistance of resistance R 1, i.e. R2=2 * R1.The condition of U2<VB is more harsher than the condition of U1<VB like this, and the electric current that can guarantee to flow through IGBT pipe Q2 is very low, and IGBT pipe Q2 has entered off state substantially.VB can be chosen to be VB=R1 * I ÷ 10000, when electric current I m drop to running current I 1/1000 time, U1 is lower than VB, when electric current I m drop to running current I 1/20000 time, U2 is lower than VB.
Suppose S
lIN3signal after the second input unit 305 is LA, LA is after delay circuit 310, obtain the signal LB that the deration of signal is consistent with LA, phase place is contrary with LA, be T1 the time of delay of the rising edge of LA and the trailing edge of LB, and be T2 the time of delay of the trailing edge of LA and the rising edge of LB.
Suppose S
hIN3signal after described the first input unit 301 is HA, the rising edge of HA is after NAND gate U4, not gate U5, level conversion unit 302 and higher-pressure region signal adjustment unit 303, obtain the signal HB that the deration of signal is consistent with HA, phase place is contrary with HA, be T3 the time of delay of the rising edge of HA and the trailing edge of HB, and be T4 the time of delay of the trailing edge of HA and the rising edge of HB.
Because delay unit 310 is for regulating S
lIN3transmission time, make S
lIN3transmission time and S
hIN3time while normally being transmitted is consistent, that is, must meet:
T1=T3
T2=T4
In actual applications, not gate U6 and not gate U7 are for signal waveform adjustment, size is very little, NMOS pipe Q3 also selects undersized original paper, it is the pipe of 10 μ m/5 μ m that positive-negative-positive triode in not gate U6 and not gate U7 all can be used breadth length ratio, it is the pipe of 5 μ m/5 μ m that NPN type triode Guan Douke in not gate U6 and not gate U7 is used breadth length ratio, and it is the pipe of 20 μ m/10 μ m that NMOS pipe Q3 can be used breadth length ratio.For the BCD technique of current popular, the total delay of generation can not surpass 10ns, is negligible.Therefore, T1 depends primarily on the discharge process of 1 couple of NMOS pipe Q3 of capacitor C, and T2 depends primarily on the charging process of current source I1 to capacitor C 1.
The threshold value of supposing the second driver element 306 is V
th, the capacitance of capacitor C 1 is C
delay.
When NMOS pipe, Q3 becomes conducting from cut-off, and the voltage of capacitor C 1 becomes V from VCC
thtime be T1.
When NMOS pipe, Q3 becomes cut-off from conducting, and the voltage of capacitor C 1 becomes V from 0
thtime be T2.
The electron mobility of supposing NMOS pipe Q3 is μ
n, grid oxygen electric capacity is C
ox, grid oxygen width is W, grid oxygen length is L, threshold voltage is V
thn, the capacitance C of capacitor C 1
delayfor:
VCC is generally 15V, V
thby the second driver element 306, determined μ
n, C
oxand V
thnby flow technique, provided,
t1=T3, therefore, C
delaycan be unique definite by above formula (1).
The electric current of supposing current source I1 is I
delay, I
delayfor:
Due to V
thand C
delayknown, T2=T4, therefore, I
delaycan be unique definite by above formula (2).
In sum, the embodiment of the present invention by adopting and comprise the first current detecting unit in Intelligent Power Module, the second current detecting unit, the single-phase driving circuit of signal monitoring unit and delay unit, by the first current detecting unit and the second current detecting unit, respectively the output current of the IGBT pipe output current of Q1 of upper brachium pontis and the IGBT of lower brachium pontis pipe Q2 is detected, by signal monitoring unit, the upper brachium pontis input signal of processing being after filtering converted to low level when IGBT pipe Q2 does not turn-off drives the first driver element control IGBT pipe Q1 to turn-off through level conversion unit and higher-pressure region signal adjustment unit, and then make IGBT pipe Q1 and IGBT pipe Q2 there will not be the situation of conducting simultaneously, reduce the probability that Intelligent Power Module lost efficacy because overcurrent punctures, contribute to extend the useful life of Intelligent Power Module, guaranteed the fail safe of Intelligent Power Module.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any modifications of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.
Claims (5)
1. an Intelligent Power Module, comprise three single-phase driving circuits, the U that described three single-phase driving circuits are exported respectively in three-phase alternating current is electric mutually, V mutually electricity is electric mutually with W, each single-phase driving circuit in described three single-phase driving circuits comprises the first input unit, level conversion unit, higher-pressure region signal adjustment unit, the first driver element, the second input unit, the second driver element, IGBT manages Q1, fast recovery diode D1, IGBT pipe Q2 and fast recovery diode D2, described the first input unit and described the second input unit carry out filtering to upper brachium pontis input signal and lower brachium pontis input signal respectively, described level conversion unit is exported after importing the low-pressure area signal in the output signal of described the first input unit into higher-pressure region, and export described the first driver element to after compensating processing by described higher-pressure region signal adjustment unit, described the first driver element and described the second driver element generate respectively there is current driving ability pulse signal to control the break-make of described IGBT pipe Q1 and described IGBT pipe Q2, the drain electrode access high voltage of described IGBT pipe Q1, the anode of described fast recovery diode D1 is connected respectively with negative electrode source electrode and the drain electrode that described IGBT manages Q1, the source electrode of described IGBT pipe Q1 and the common contact of the drain electrode of described IGBT pipe Q2 export described U mutually electricity, described V mutually electricity or described W electric mutually, the source ground of described IGBT pipe Q2, the anode of described fast recovery diode D2 is connected respectively with negative electrode source electrode and the drain electrode that described IGBT manages Q2, it is characterized in that, described single-phase driving circuit also comprises:
The first current detecting unit, the first test side is connected respectively the source electrode of described IGBT pipe Q1 and the drain electrode that described IGBT manages Q2 with the second test side, for the output current of the drain electrode of described IGBT pipe Q1 is detected, and exports accordingly the first detection signal; Described the first detection signal is low level when described IGBT pipe Q1 turn-offs, and described the first detection signal is low level or high level when described IGBT pipe Q1 conducting;
The second current detecting unit, the first test side is connected respectively with the second test side source electrode and the ground that described IGBT manages Q2, for the output current of the drain electrode of described IGBT pipe Q2 is detected, and exports accordingly the second detection signal; Described the second detection signal is low level when described IGBT pipe Q2 turn-offs, and described the second detection signal is high level when described IGBT pipe Q2 conducting;
Signal monitoring unit, signal input part connects the output of described the first input unit, the first detection signal input is connected respectively the output of described the first current detecting unit and the output of described the second current detecting unit with the second detection signal input, for when described the first detection signal and/or described the second detection signal are low level, export the output signal of described the first input unit to described level conversion unit, when described the first detection signal and described the second detection signal are high level, the output signal of described the first input unit is converted to low level output to described level conversion unit,
Delay unit, input is connected respectively the output of described the second input unit and the input of described the second driver element with output, for the output signal of described the second input unit is carried out to time delay output so that the output signal of described the second input unit to arrive the time that the time of described the second driver element and the output signal of described the first input unit arrive described the first driver element by described signal monitoring unit, described level conversion unit and described high voltage region signal adjustment unit identical.
2. Intelligent Power Module as claimed in claim 1, it is characterized in that, described the first current detecting unit comprises resistance R 1 and comparator U1, the common contact of the in-phase input end of the first end of described resistance R 1 and described comparator U1 is the first test side of described the first current detecting unit, the common contact of the second end of described resistance R 1 and the inverting input of described comparator U1 is the second test side of described the first current detecting unit, and the output of described comparator U1 is the output of described the first current detecting unit.
3. Intelligent Power Module as claimed in claim 1, it is characterized in that, described the second current detecting unit comprises resistance R 2 and comparator U2, the common contact of the in-phase input end of the first end of described resistance R 2 and described comparator U2 is the first test side of described the second current detecting unit, the common contact of the second end of described resistance R 2 and the inverting input of described comparator U2 is the second test side of described the second current detecting unit, and the output of described comparator U2 is the output of described the second current detecting unit.
4. Intelligent Power Module as claimed in claim 1, is characterized in that, described signal monitoring unit comprises:
NOR gate U3, NAND gate U4 and not gate U5;
The first input end of described NOR gate U3 and the second input are respectively the first detection signal input and the second detection signal input of described signal monitoring unit, the output of described NOR gate U3 connects the first input end of described NAND gate U4, the second input of described NAND gate U4 is the signal input part of described signal monitoring unit, the output of described NAND gate U4 connects the input of described not gate U5, and the output of described not gate U5 is the output of described signal monitoring unit.
5. Intelligent Power Module as claimed in claim 1, is characterized in that, described delay unit comprises:
Not gate U6, not gate U7, NMOS pipe Q3, current source I1 and capacitor C 1;
The input of described not gate U6 is the input of described delay unit, the input of described not gate U7 is connected respectively the output of described not gate U6 and the grid of described NMOS pipe Q3 with output, the formed output that contact is described delay unit altogether of first end of the described NMOS pipe drain electrode of Q3 and the output of described current source I1 and described capacitor C 1, the input termination low-voltage dc power supply of described current source I1, substrate and the source electrode of the second end of described capacitor C 1 and described NMOS pipe Q3 are connected to ground altogether.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110750395A (en) * | 2018-07-24 | 2020-02-04 | 广东美的制冷设备有限公司 | High integration power module and test method thereof, outdoor unit, air conditioner, test equipment and computer readable storage medium |
| CN111555246A (en) * | 2020-05-06 | 2020-08-18 | 广东美的制冷设备有限公司 | Drive chip, intelligent power and air conditioner |
| CN113556027A (en) * | 2021-06-25 | 2021-10-26 | 上海晶丰明源半导体股份有限公司 | Half-bridge drive circuit and system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080136394A1 (en) * | 2005-06-24 | 2008-06-12 | Sanyo Electric Co., Ltd. | Switching Control Circuit and Self-Excited DC-DC Converter |
| CN201976027U (en) * | 2011-03-10 | 2011-09-14 | 清华大学 | Phase tracking circuit of induction heating power supply with inverse piezoelectric limiting effect on switching device |
| CN203233303U (en) * | 2013-04-08 | 2013-10-09 | 广东美的制冷设备有限公司 | An intelligent power module |
-
2013
- 2013-04-08 CN CN201310120119.8A patent/CN104104220B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080136394A1 (en) * | 2005-06-24 | 2008-06-12 | Sanyo Electric Co., Ltd. | Switching Control Circuit and Self-Excited DC-DC Converter |
| CN201976027U (en) * | 2011-03-10 | 2011-09-14 | 清华大学 | Phase tracking circuit of induction heating power supply with inverse piezoelectric limiting effect on switching device |
| CN203233303U (en) * | 2013-04-08 | 2013-10-09 | 广东美的制冷设备有限公司 | An intelligent power module |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110750395A (en) * | 2018-07-24 | 2020-02-04 | 广东美的制冷设备有限公司 | High integration power module and test method thereof, outdoor unit, air conditioner, test equipment and computer readable storage medium |
| CN111555246A (en) * | 2020-05-06 | 2020-08-18 | 广东美的制冷设备有限公司 | Drive chip, intelligent power and air conditioner |
| CN113556027A (en) * | 2021-06-25 | 2021-10-26 | 上海晶丰明源半导体股份有限公司 | Half-bridge drive circuit and system |
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