CN104103714A - Preparation method of novel battery piece - Google Patents
Preparation method of novel battery piece Download PDFInfo
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- CN104103714A CN104103714A CN201410299409.8A CN201410299409A CN104103714A CN 104103714 A CN104103714 A CN 104103714A CN 201410299409 A CN201410299409 A CN 201410299409A CN 104103714 A CN104103714 A CN 104103714A
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- layer
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- silicon nitride
- nitride film
- film layer
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 34
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 14
- 238000005245 sintering Methods 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims abstract description 5
- 238000009792 diffusion process Methods 0.000 claims abstract description 5
- 238000007650 screen-printing Methods 0.000 claims abstract description 5
- 239000012528 membrane Substances 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 239000005360 phosphosilicate glass Substances 0.000 abstract 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 239000012495 reaction gas Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 241000127225 Enceliopsis nudicaulis Species 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000003854 Surface Print Methods 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a preparation method of a novel battery piece. The preparation method comprises the steps of cleaning, texturing, preparing a junction by diffusion, etching, removing PSG (Phosphosilicate Glass), applying a film, performing silk-screen printing, sintering and sorting, wherein the film is applied by two times: a silicon oxide film layer is applied after etching and removing the PSG, adopted reaction gas is N2O and SiH4, gas flows are 9000sccm and 300sccm respectively, the thickness of the silicon oxide film layer is 20-30nm and the refractive index is 1.8; and then a silicon nitride film layer is applied after sintering, adopted reaction gas is NH3, SiH4 and N2, gas flows are 7000sccm and 700sccm respectively, the thickness of the silicon nitride film layer is 70-80nm and the refractive index is 2.0-2.1. The preparation method improves the photoelectric conversion efficiency of a battery, and the service life is long.
Description
Technical field
The invention belongs to application of solar, be specifically related to a kind of preparation method of crystal silicon solar batteries sheet.
Background technology
At present, in solar battery sheet preparation field, modal process step is exactly: one, and cleaning and texturing, the object of making herbs into wool is to remove mechanical loss layer and the oxide layer of silicon chip surface, is secondly a kind of texture matte that can increase silicon chip surface reflectivity of preparation; Two, diffusion system knot, object is to produce PN junction, forms internal electric field, is also the core of whole cell piece.Three, etching, object is by chemical reaction, the edge PN junction that connects silicon chip upper and lower surface is carved, to reach the object of the insulation at positive and the back side.With HF acid, remove the phosphorosilicate glass of silicon chip surface simultaneously.Four, PECVD plated film, is at cell piece surface deposition silicon nitride anti-reflecting film, increases the absorption of battery to sunray; Also can carry out H passivation to the front surface of battery simultaneously, battery surface is protected, anti-oxidation.Five, silk screen printing and sintering, main purpose is exactly to form electrode in silicon chip surface printing, and front is silver electrode, and the back side is silver-colored aluminium paste back electrode, is convenient to the collection of electric charge.Six, test go-on-go, be mesuring battary sheet under the irradiation of simulated solar light source xenon lamp, thereby by changing the resistance of load resistance, change the open circuit voltage of battery, short circuit current, then by calculating fill factor, curve factor, efficiency, series resistance, the parameters such as parallel resistance, finally by cell classification
Above step is the production model of at present main flow, but continuous maturation and development along with Application of Solar Energy technology, it is imperative developing more high efficiency cell piece, the exploitation of novel battery sheet have become the focus that industry is paid close attention to, only have continuous innovation and exploitation, the use value that improves cell piece, enterprise could obtain and better develops and establish oneself in an unassailable position in fierce market competition.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of preparation method of novel battery sheet, has not only improved cell photoelectric transformation efficiency, and long service life.
The technical scheme that technical solution problem of the present invention adopts is: a kind of preparation method of novel battery sheet, comprise cleaning and texturing step, diffusion system knot step, etching and remove PSG step, plated film step, silk screen printing step, sintering step and go-on-go step, it is characterized in that: described plated film step is divided into twice, in etching and after removing PSG step, plate one deck membranous layer of silicon oxide for the first time, the reacting gas of employing is N
2o and SiH
4, gas flow is respectively 9000sccm and 300sccm, and the thickness of described membranous layer of silicon oxide is 20～30nm, and refractive index is 1.8; After sintering step, plate for the second time silicon nitride film layer, the reacting gas of employing is NH
3and SiH
4and N
2, gas flow is respectively 7000sccm and 700sccm, and the thickness of described silicon nitride film layer is 70～80nm, and refractive index is 2.0～2.1.
As a kind of preferred, described silicon nitride film layer is monofilm or duplicature or trilamellar membrane, and the thickness of described individual layer silicon nitride film layer is 70～80nm; The ground floor thickness of described double-layer silicon nitride rete is 30～40nm, and second layer thickness is 40～50nm; The ground floor thickness of described three layers of silicon nitride film layer is 20～30nm, and second layer thickness is 30～40nm, and second layer thickness is 10～20nm.
The present invention deposits one deck membranous layer of silicon oxide in etching and after removing PSG step, mainly to play a kind of passivation, the silica density forming on surface is very high, and stone, to stop dirty material or polluter in environment, invade responsive silicon chip surface, meanwhile, its high rigidity can prevent that silicon chip surface is scratched in manufacture process, and the durability that strengthens silicon chip in production procedure process; Secondly, silica is to come from its chemical characteristic to the protection of silicon chip, no matter how high the clean level of technical process is, always also have the active pollutant of some electrical characteristics, finally can enter or drop on silicon chip surface; In oxidizing process, the last layer of silicon becomes silicon dioxide, pollutes and on surface, forms new oxide layer, has kept away electronically active surface, and other pollutants are limited in silicon oxide film, and for silicon chip, injury is very little.Therefore, after oxidation, can remove those unwanted contaminant mobile ions of surface, thereby improve the electrical property of cell piece.On the good cell piece of printing-sintering, plate again one deck silicon nitride film, in order to allow this tunic be utilized more fully, when illumination is mapped on silicon chip, the ground floor medium passing through is silicon nitride film, the silicon nitride film photon that transmission is fallen to shine completely, next is only the media such as metal grid lines below film and silicon chip, even if light can reflect, but major part is also in silicon nitride internal reflection, reflector space is below silicon nitride film and below grid line, silicon nitride film and the space between silicon chip.By ground floor medium, be that metal grid lines just directly reflects away with irradiating light, and through silicon nitride film, do not compare, obviously the first situation is better than the second situation.In coating process, the gas passing into not only can react with silicon chip, also can react with metal ion, and have simple substance to produce, so little on the Gate line conductive capability impact of cell piece simultaneously.
When the present invention plates silicon nitride film layer for the second time, the reacting gas of employing is NH
3and SiH
4, also have micro-N
2.
The invention has the beneficial effects as follows: adopt the inventive method, plated film step is divided into twice and carries out, plate for the first time the colourless membranous layer of silicon oxide of one deck, then after sintering step, plate silicon nitride film layer and not only improved cell photoelectric transformation efficiency, and long service life.
Accompanying drawing explanation
Fig. 1 is the structural representation of embodiment of the present invention cell piece.
Wherein 1, metal grid lines; 2, silicon nitride film; 3, silicon oxide film; 4, N+ layer; 5, Si substrate; 6, P+ layer; 7, back electrode.
Below in conjunction with accompanying drawing, the present invention will be further described.
Embodiment
Embodiment 1: a kind of preparation method of novel battery sheet, comprise cleaning and texturing step, diffusion system knot step, etching and remove PSG step, plated film step, silk screen printing step, sintering step and go-on-go step, wherein plated film step is divided into twice, in etching and after removing PSG step, plate the colourless membranous layer of silicon oxide of one deck for the first time, the reacting gas of employing is N
2o and SiH
4, gas flow is respectively 9000sccm and 300sccm, and the thickness of described membranous layer of silicon oxide is 30nm, and refractive index is 1.8; After sintering step, plate for the second time one deck silicon nitride film layer, the reacting gas of employing is NH
3and SiH
4, gas flow is respectively 7000sccm and 700sccm, and the thickness of described silicon nitride film layer is 70nm, and refractive index is 2.05.
Embodiment 2: the preparation method of another kind of novel battery sheet, and wherein the thickness of membranous layer of silicon oxide is 20nm, refractive index is 1.8; After sintering step, plate for the second time two layers of silicon nitride film layer, the reacting gas that ground floor adopts is NH
3and SiH
4, gas flow is respectively 4000sccm and 1000sccm, and the thickness of ground floor silicon nitride film layer is 40nm, and refractive index is 2.0; The reacting gas that the second layer adopts is NH
3and SiH
4, gas flow is respectively 7000sccm and 900sccm, and the thickness of second layer silicon nitride film layer is 50nm, and refractive index is 2.05.Other is identical with embodiment 1.
Embodiment 3: the preparation method of another novel battery sheet, and wherein the thickness of membranous layer of silicon oxide is 25nm, refractive index is 1.8; After sintering step, plate for the second time three layers of silicon nitride film layer, the reacting gas that ground floor adopts is NH
3and SiH
4, gas flow is respectively 3000sccm and 300sccm, and the thickness of ground floor silicon nitride film layer is 30nm, and refractive index is 2.0; The reacting gas that the second layer adopts is NH
3and SiH
4, gas flow is respectively 6000sccm and 660sccm, and the thickness of second layer silicon nitride film layer is 40nm, and refractive index is 2.05; The reacting gas of the 3rd layer of employing is NH
3and SiH
4, gas flow is respectively 6000sccm and 660sccm, and the thickness of the 3rd layer of silicon nitride film layer is 10nm, and refractive index is 2.1.Other is identical with embodiment 1.
Claims (2)
1. the preparation method of a novel battery sheet, comprise cleaning and texturing step, diffusion system knot step, etching and remove PSG step, plated film step, silk screen printing step, sintering step and go-on-go step, it is characterized in that: described plated film step is divided into twice, in etching and after removing PSG step, plate one deck membranous layer of silicon oxide for the first time, the reacting gas of employing is N
2o and SiH
4, gas flow is respectively 9000sccm and 300sccm, and the thickness of described membranous layer of silicon oxide is 20～30nm, and refractive index is 1.8; After sintering step, plate for the second time silicon nitride film layer, the reacting gas of employing is NH
3and SiH
4, gas flow is respectively 7000sccm and 700sccm, and the thickness of described silicon nitride film layer is 70～80nm, and refractive index is 2.0～2.1.
2. the preparation method of a kind of novel battery sheet as claimed in claim 1, is characterized in that: described silicon nitride film layer is monofilm or duplicature or trilamellar membrane, and the thickness of described individual layer silicon nitride film layer is 70～80nm; The ground floor thickness of described double-layer silicon nitride rete is 30～40nm, and second layer thickness is 40～50nm; The ground floor thickness of described three layers of silicon nitride film layer is 20～30nm, and second layer thickness is 30～40nm, and second layer thickness is 10～20nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410299409.8A CN104103714A (en) | 2014-06-27 | 2014-06-27 | Preparation method of novel battery piece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410299409.8A CN104103714A (en) | 2014-06-27 | 2014-06-27 | Preparation method of novel battery piece |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104103714A true CN104103714A (en) | 2014-10-15 |
Family
ID=51671692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410299409.8A Pending CN104103714A (en) | 2014-06-27 | 2014-06-27 | Preparation method of novel battery piece |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104103714A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102903764A (en) * | 2012-09-27 | 2013-01-30 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Three-layered silicon nitride antireflective film of crystalline silicon solar cell and preparation method thereof |
| US20130171763A1 (en) * | 2010-07-15 | 2013-07-04 | Shin-Etsu Chemical Co., Ltd. | Method for producing solar cell and film-producing device |
| CN103387011A (en) * | 2012-05-10 | 2013-11-13 | 王洪举 | Carbon fiber solar panel car roof |
-
2014
- 2014-06-27 CN CN201410299409.8A patent/CN104103714A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130171763A1 (en) * | 2010-07-15 | 2013-07-04 | Shin-Etsu Chemical Co., Ltd. | Method for producing solar cell and film-producing device |
| CN103387011A (en) * | 2012-05-10 | 2013-11-13 | 王洪举 | Carbon fiber solar panel car roof |
| CN102903764A (en) * | 2012-09-27 | 2013-01-30 | 东方电气集团(宜兴)迈吉太阳能科技有限公司 | Three-layered silicon nitride antireflective film of crystalline silicon solar cell and preparation method thereof |
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Application publication date: 20141015 |