CN104101949A - Cross connecting rod column and cylinder based large absolute forbidden band square lattice photonic crystal - Google Patents
Cross connecting rod column and cylinder based large absolute forbidden band square lattice photonic crystal Download PDFInfo
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- CN104101949A CN104101949A CN201410364388.3A CN201410364388A CN104101949A CN 104101949 A CN104101949 A CN 104101949A CN 201410364388 A CN201410364388 A CN 201410364388A CN 104101949 A CN104101949 A CN 104101949A
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
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Abstract
The invention discloses a cross connecting rod column and cylinder based large absolute forbidden band square lattice photonic crystal. The cross connecting rod column and cylinder based large absolute forbidden band square lattice photonic crystal comprises dielectric cylinders with high refractive index and background dielectric cylinders with low refractive index; panel dielectric cylinder cross connecting rods which are arranged in the cross direction and circular dielectric cylinders are connected to form into the dielectric cylinders with the high refractive index; the lattice constant of the square lattice is a; the width of the panel dielectric cylinders is 0.0558a; the semi-diameter of the cylinders is 0.31392a; the comparative value of the largest absolute forbidden band is 17.26755%. The photonic crystal has the advantages of belonging to the square lattice and being easy to achieve connection and coupling between different optical elements in an optical path and different optical paths and beneficial to reduction of costs, being large in absolute forbidden band and widely applied to large-scale integration optical path design.
Description
Technical field
The present invention relates to wide absolute band gap 2 D photon crystal.
Background technology
1987, how the E.Yablonovitch in U.S. Bell laboratory suppresses spontaneous radiation and Princeton university S.John in discussion proposed the concept of photonic crystal (Photonic Crystal) independently of one another in discussion photon region.Photonic crystal is the structure of matter that a kind of dielectric material is periodic arrangement in space, conventionally by two or more, has the artificial lens that differing dielectric constant material forms.
At frequency domain, TE or TM ripple that any direction is propagated, the electromagnetic field density of states is TE or the complete forbidden band of TM that zero frequency separation is defined as photonic crystal, is called as the absolute band gap of photonic crystal for the frequency separation in TE and the complete forbidden band of TM simultaneously.Design has the photonic crystal of complete forbidden band or absolute band gap, can simply and effectively regulate and control macroscopical electromagnetic property of medium, comprise and select wherein frequency band, pattern and the transmission path of propagation of electromagnetic waves, controlling the characteristics such as the absorption of its medium or radiation, is the basis of controlling photon motion, making various photonic devices.
For various photon crystal devices, forbidden photon band is wider, the performance of device is better, for example, forbidden photon band is wider, and the working band of photon crystal wave-guide is wider, loss is less, and the quality factor of photonic crystal resonant cavity and laser instrument is higher, photonic crystal is better to the binding effect of spontaneous radiation, and the reflectivity of photon crystal reflecting mirror is more high.All there is photon band gap because of the light on the different directions of propagation in the photonic crystal with complete forbidden band and absolute band gap, the photonic crystal therefore with complete forbidden band and absolute band gap has been subject to extensive concern.
Traditionally, obtain large relative forbidden band, need to adopt the non-tetragonal structures such as triangular crystal lattice, hexagonal lattice, but in photonic crystal integrated optical circuit, adopt tetragonal structure can make light path succinct, and be easy to provide the integrated level of light path, and and the absolute band gap width of traditional tetragonal photonic crystal is very little, it is the target that people pursue always that the tetragonal photonic crystal therefore with large absolute band gap becomes.
Summary of the invention
The object of the invention is to overcome weak point of the prior art, provide that a kind of to be easy to light path integrated, the novel tetragonal photon crystal structure of large absolute band gap width relative value.
For realizing above object, the present invention is achieved by the following technical programs.
Large absolute band gap tetragonal photon crystal structure based on cross connecting rod post and cylinder of the present invention comprises high refractive index medium post and low-refraction background media post, and described high refractive index medium post connects circle medium post by the dull and stereotyped medium post cross connecting rod that is positioned at the placement of cross direction and forms; Described photon crystal structure is arranged and is formed by tetragonal by described cellular; The grating constant of described tetragonal is a; The width D of described dull and stereotyped medium post is 0.0558a, and the radius R of cylinder is 0.31392a, and the relative value of corresponding maximum absolute band gap is 17.26755%.
Described high refractive index medium is the medium that silicon, gallium arsenide, titania or refractive index are greater than 2.
Described high refractive index medium is silicon, and its refractive index is 3.4.
Described low-refraction background media is the medium that air, vacuum, magnesium fluoride, silicon dioxide or refractive index are less than 1.6.
Described low refractive index dielectric is air.
The high order end of the left plate connecting link of described cellular is a to the distance of the low order end of right dull and stereotyped connecting link.
The lowermost end of the lower dull and stereotyped connecting link of described cellular is a to the distance of the top of upper flat plate connecting link.
The radius of described cylinder is 0.306a≤R≤0.324a, and high-index material is silicon, and low refractive index dielectric is air, and the absolute band gap relative value of described photon crystal structure is greater than 16.6%.
The width of described dull and stereotyped medium post is 0.055a≤D≤0.059a, and the radius of described cylinder is 0.3078a≤R≤0.3231a, and high-index material is silicon, and low refractive index dielectric is air, and the absolute band gap relative value of described photon crystal structure is greater than 16.8%.
The width of described dull and stereotyped medium post is 0.055a≤D≤0.059a, and the radius of described cylinder is 0.3096a≤R≤0.3186a, and high-index material is silicon, and low refractive index dielectric is air, and the absolute band gap relative value of described photon crystal structure is greater than 17%.
Photon crystal structure of the present invention can be widely used in large-scale integrated light path design.It compared with prior art has following good effect.
1. photon crystal structure of the present invention has very large absolute band gap, for the application of photonic crystal provides larger space, simultaneously also for the Design and manufacture of photon crystal device brings larger convenience and dirigibility.
2. photonic crystal of the present invention belongs to tetragonal, and light path is succinct, is convenient to design, is easy to extensive light path integrated;
3. in the light path of tetragonal photonic crystal of the present invention between different optical element and be easy between different light paths realize to connect and coupling, be conducive to reduce costs.
Accompanying drawing explanation
Fig. 1 is the large absolute band gap square crystal lattice 2 D photon crystal structural representation based on cross connecting rod post and cylinder of the present invention.
Fig. 2 is that the width of the dull and stereotyped medium post of the present invention is for the figure that affects of absolute band gap relative value.
Fig. 3 is that photon crystal structure of the present invention is corresponding to the energy band diagram of maximum absolute band gap width relative value.
Fig. 4 is the argument structure figure of the maximum absolute band gap relative value of the photonic crystal shown in Fig. 1.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is done to further detailed elaboration.
Photon crystal structure of the present invention comprises high refractive index medium post and low-refraction background media post, and whole photon crystal structure is arranged and formed by tetragonal by cellular.Described high refractive index medium post is divided into two parts: circle medium post and the dull and stereotyped medium post cross connecting rod that cross direction is placed that is positioned at that is connected circle medium post; A cellular that Figure 1 shows that photonic crystal, in figure, dotted line represents the border of cellular, this cellular is pressed tetragonal and is arranged the photonic crystal described in forming; The grating constant of described tetragonal is a; The width D of described dull and stereotyped medium post is 0.0558a, and the radius R of cylinder is 0.31392a, and the relative value of corresponding maximum absolute band gap is 17.26755%; The width of described dull and stereotyped medium post is 0.055a≤D≤0.059a, and the radius of described cylinder is 0.306a≤R≤0.324a, and high-index material is silicon, and low refractive index dielectric is air, and the absolute band gap relative value of described photon crystal structure is greater than 16.6%; The width of described dull and stereotyped medium post is 0.055a≤D≤0.059a, and the radius of described cylinder is 0.3078a≤R≤0.3231a, and high-index material is silicon, and low refractive index dielectric is air, and the absolute band gap relative value of described photon crystal structure is greater than 16.8%; The width of described dull and stereotyped medium post is 0.055a≤D≤0.059a, and the radius of described cylinder is 0.3096a≤R≤0.3186a, and high-index material is silicon, and low refractive index dielectric is air, and the absolute band gap relative value of described photon crystal structure is greater than 17%; The high order end of the left plate connecting link of described cellular is a to the distance of the low order end of right dull and stereotyped connecting link; The lowermost end of the lower dull and stereotyped connecting link of described cellular is a to the distance of the top of upper flat plate connecting link; The high refractive index medium that described high refractive index medium adopts the refractive indexes such as silicon (Si), gallium arsenide, titania to be greater than 2; Background media is low refractive index dielectric, the medium that described low-refraction background media adopts air, vacuum, magnesium fluoride, silicon dioxide or refractive index to be less than 1.6.
Conventionally the investigation index using the ratio of absolute band gap width and forbidden band centre frequency as energy gap, is referred to as absolute band gap width relative value.
Utilize plane wave expansion method to carry out a large amount of scrutinies and obtain, maximum absolute band gap relative value and its corresponding parameter.
By method of steepest descent, described photon crystal structure is optimized to search research, can obtains maximum absolute band gap relative value, concrete grammar is as follows:
(1) the first sweep limit of determining two parameters is: the width D of dull and stereotyped medium post=(0.01a～0.2a), the radius R of cylinder=(0.1a～0.5a).
(2) based on plane wave expansion method, do coarse scanning, obtaining reasonable parameter D is 0.056a.
(3) high-index material adopts silicon, and low refractive index dielectric is air, and fixedly D is 0.056a, based on plane wave expansion method, R is scanned, and obtains the result shown in Fig. 2.In Fig. 2, the value of R has larger complete forbidden band in 0.306～0.324 scope, and at R, equals 0.31392a place and have maximum absolute band gap relative value, is gapratio1=17.26668%.
(4) high-index material adopts silicon, and low refractive index dielectric is air, and fixedly R is 0.31392a, based on plane wave expansion method, D is scanned, and obtains best absolute band gap relative value gapratio2=17.26755%, and corresponding D value is 0.0558a.
(5) judgement | (gapratio2 ?gapratio1)/(gapratio2+gapratio1) | whether be less than 1%, if not, with the aforementioned result that each walks, each parameter is carried out to new round scanning, until | (gapratio2 ?gapratio1)/(gapratio2+gapratio1) | <1% just finishes search, finally obtains optimized absolute band gap relative value and corresponding structural parameters thereof.
The optimum results finally obtaining is: high-index material adopts silicon, and low refractive index dielectric is air, D=0.0558a, and during R=0.31392a, relative value=17.26755% of maximum absolute band gap.As shown in Figure 3, as shown in Figure 4, in figure, dotted line represents the border of cellular to the photon crystal structure under final structure parameter to its energy band diagram.
According to above result, provide following 6 embodiment:
Embodiment 1. high refractive index mediums adopt silicon, low refractive index dielectric is air, a=0.325, dull and stereotyped medium post width D=0.0558a=0.018135 micron, cylindrical radius R=0.31392a=0.102024 micron, the absolute band gap scope of resulting photonic crystal is (0.818722～0.688574), and the relative value of absolute band gap corresponds to 17.26755%.
Embodiment 2. high refractive index mediums adopt silicon, low refractive index dielectric is air, a=0.45, dull and stereotyped medium post width D=0.0558a=0.02511 micron, cylindrical radius R=0.31392a=0.141264 micron, the absolute band gap scope of resulting photonic crystal is (1.133615～0.95341), and the relative value of absolute band gap corresponds to 17.26755%.
Embodiment 3. high refractive index mediums are adopted as silicon, low refractive index dielectric is air, a=0.65, dull and stereotyped medium post width D=0.0558a=0.03627 micron, cylindrical radius R=0.31392a=0.204048 micron, the absolute band gap scope of resulting photonic crystal is (1.637445～1.377148), and the relative value of absolute band gap corresponds to 17.26755%.
Embodiment 4. high refractive index mediums adopt silicon, low refractive index dielectric is air, a=0.35, dull and stereotyped medium post width D=0.56a=0.0196 micron, cylindrical radius R=0.32364a=0.113274 micron, the absolute band gap scope of resulting photonic crystal is (0.893975～0.756888), and the relative value of absolute band gap corresponds to 16.60611%.
Embodiment 5. high refractive index mediums adopt silicon, low refractive index dielectric is air, a=0.475, dull and stereotyped medium post width D=0.0562a=0.026695 micron, cylindrical radius R=0.3204a=0.15219 micron, the absolute band gap scope of gained photonic crystal is (1.2073～1.020189), and the relative value of absolute band gap corresponds to 16.80116%.
Embodiment 6. high refractive index mediums are adopted as silicon, low refractive index dielectric is air, a=0.5, dull and stereotyped medium post width D=0.059a=0.0295 micron, cylindrical radius R=0.3125a=0.15625 micron, the absolute band gap scope of resulting photonic crystal is (1.257292～1.060265), and the relative value of absolute band gap corresponds to 17.0011%.
The above the present invention all has improvements in embodiment and range of application, not should be understood to the present invention to limit.
Claims (10)
1. the large absolute band gap tetragonal photonic crystal based on cross connecting rod post and cylinder, it is characterized in that, described photon crystal structure comprises high refractive index medium post and low-refraction background media post, and described high refractive index medium post connects circle medium post by the dull and stereotyped medium post cross connecting rod that is positioned at the placement of cross direction and forms; Described photon crystal structure is arranged and is formed by tetragonal by described cellular; The grating constant of described tetragonal is a; The width D of described dull and stereotyped medium post is 0.0558a, and the radius R of cylinder is 0.31392a, and the relative value of corresponding maximum absolute band gap is 17.26755%.
2. according to the large absolute band gap tetragonal photonic crystal based on cross connecting rod post and cylinder claimed in claim 1, it is characterized in that, described high refractive index medium is the medium that silicon, gallium arsenide, titania or refractive index are greater than 2.
3. according to the large absolute band gap tetragonal photonic crystal based on cross connecting rod post and cylinder claimed in claim 2, it is characterized in that, described high refractive index medium is silicon, and its refractive index is 3.4.
4. according to the large absolute band gap tetragonal photonic crystal based on cross connecting rod post and cylinder claimed in claim 1, it is characterized in that, described low-refraction background media is the medium that air, vacuum, magnesium fluoride, silicon dioxide or refractive index are less than 1.6.
5. according to the large absolute band gap tetragonal photonic crystal based on cross connecting rod post and cylinder claimed in claim 4, it is characterized in that, described low refractive index dielectric is air.
6. according to the large absolute band gap tetragonal photonic crystal based on cross connecting rod post and cylinder claimed in claim 1, it is characterized in that, the high order end of the left plate connecting link of described cellular is a to the distance of the low order end of right dull and stereotyped connecting link.
7. according to the large absolute band gap tetragonal photonic crystal based on cross connecting rod post and cylinder claimed in claim 1, it is characterized in that, the lowermost end of the lower dull and stereotyped connecting link of described cellular is a to the distance of the top of upper flat plate connecting link.
8. according to the large absolute band gap tetragonal photonic crystal based on cross connecting rod post and cylinder claimed in claim 1, it is characterized in that, the width of described dull and stereotyped medium post is 0.055a≤D≤0.059a, the radius of described cylinder is 0.306a≤R≤0.324a, high-index material is silicon, low refractive index dielectric is air, and the absolute band gap relative value of described photon crystal structure is greater than 16.6%.
9. according to the large absolute band gap tetragonal photonic crystal based on cross connecting rod post and cylinder claimed in claim 1, it is characterized in that, the width of described dull and stereotyped medium post is 0.055a≤D≤0.059a, the radius of described cylinder is 0.3078a≤R≤0.3231a, high-index material is silicon, low refractive index dielectric is air, and the absolute band gap relative value of described photon crystal structure is greater than 16.8%.
10. according to the large absolute band gap tetragonal photonic crystal based on cross connecting rod post and cylinder claimed in claim 1, it is characterized in that, the width of described dull and stereotyped medium post is 0.055a≤D≤0.059a, the radius of described cylinder is 0.3096a≤R≤0.3186a, high-index material is silicon, low refractive index dielectric is air, and the absolute band gap relative value of described photon crystal structure is greater than 17%.
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| CN201410364388.3A CN104101949B (en) | 2014-07-28 | 2014-07-28 | Cross connecting rod column and cylinder based large absolute forbidden band square lattice photonic crystal |
| PCT/CN2015/085346 WO2016015630A1 (en) | 2014-07-28 | 2015-07-28 | Large absolute band-gap square-lattice photonic crystal based on cross-rod cylinders and circular cylinders |
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| CN201410364388.3A CN104101949B (en) | 2014-07-28 | 2014-07-28 | Cross connecting rod column and cylinder based large absolute forbidden band square lattice photonic crystal |
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Cited By (7)
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| CN104459990A (en) * | 2014-12-10 | 2015-03-25 | 欧阳征标 | High-extinction-ratio polarization unrelated optical switch based on panel photonic crystals |
| CN104459989A (en) * | 2014-12-10 | 2015-03-25 | 欧阳征标 | High-extinction-ratio TE optical switch based on panel photonic crystals |
| CN104820264A (en) * | 2015-05-27 | 2015-08-05 | 欧阳征标 | Two-dimensional tetragonal lattice photonic crystal with rotating hollow tetragonal prism and rotating triangular prism |
| CN104849806A (en) * | 2015-05-27 | 2015-08-19 | 欧阳征标 | Two-dimensional tetragonal lattice photonic crystal based on cross connection rod and rotation hollow tetragonal prism |
| WO2016015630A1 (en) * | 2014-07-28 | 2016-02-04 | 深圳大学 | Large absolute band-gap square-lattice photonic crystal based on cross-rod cylinders and circular cylinders |
| WO2016091193A1 (en) * | 2014-12-10 | 2016-06-16 | 深圳大学 | High-polarization-degree and high-extinction-ratio te optical switch based on photonic crystal slabs |
| WO2021175310A1 (en) * | 2020-03-06 | 2021-09-10 | 中南民族大学 | Two-dimensional photonic crystal panel, design method and optical device using panel |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2016015630A1 (en) * | 2014-07-28 | 2016-02-04 | 深圳大学 | Large absolute band-gap square-lattice photonic crystal based on cross-rod cylinders and circular cylinders |
| CN104459990A (en) * | 2014-12-10 | 2015-03-25 | 欧阳征标 | High-extinction-ratio polarization unrelated optical switch based on panel photonic crystals |
| CN104459989A (en) * | 2014-12-10 | 2015-03-25 | 欧阳征标 | High-extinction-ratio TE optical switch based on panel photonic crystals |
| WO2016091193A1 (en) * | 2014-12-10 | 2016-06-16 | 深圳大学 | High-polarization-degree and high-extinction-ratio te optical switch based on photonic crystal slabs |
| CN104459990B (en) * | 2014-12-10 | 2017-01-11 | 欧阳征标 | High-extinction-ratio polarization unrelated optical switch based on panel photonic crystals |
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| CN104820264A (en) * | 2015-05-27 | 2015-08-05 | 欧阳征标 | Two-dimensional tetragonal lattice photonic crystal with rotating hollow tetragonal prism and rotating triangular prism |
| CN104849806A (en) * | 2015-05-27 | 2015-08-19 | 欧阳征标 | Two-dimensional tetragonal lattice photonic crystal based on cross connection rod and rotation hollow tetragonal prism |
| WO2016188395A1 (en) * | 2015-05-27 | 2016-12-01 | 深圳大学 | Cross-shaped connecting rod and rotating hollow square column-based two-dimensional square lattice photonic crystal |
| CN104849806B (en) * | 2015-05-27 | 2017-10-03 | 欧阳征标 | Two dimensional square lattice photonic crystal based on cross connecting rod with rotation hollow square post |
| CN104820264B (en) * | 2015-05-27 | 2017-11-14 | 欧阳征标 | Rotate hollow square post and rotary triangle post Two dimensional square lattice photonic crystal |
| WO2021175310A1 (en) * | 2020-03-06 | 2021-09-10 | 中南民族大学 | Two-dimensional photonic crystal panel, design method and optical device using panel |
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| WO2016015630A1 (en) | 2016-02-04 |
| CN104101949B (en) | 2017-01-25 |
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