CN104098093A - Method for preparing fluorinated graphene based on gama ray irradiation - Google Patents
Method for preparing fluorinated graphene based on gama ray irradiation Download PDFInfo
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- CN104098093A CN104098093A CN201410385041.7A CN201410385041A CN104098093A CN 104098093 A CN104098093 A CN 104098093A CN 201410385041 A CN201410385041 A CN 201410385041A CN 104098093 A CN104098093 A CN 104098093A
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- graphene
- fluorinated graphene
- ray irradiation
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- gamma
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Abstract
A method for preparing fluorinated graphene based on gama ray irradiation includes adopting the gama ray to conduct radiation processing on graphene in the atmosphere containing CP4 gas to obtain a fluorinated graphene product. By means of the characteristics of high energy and high penetration capability of gama ray particles, the CF4 gas and the graphene have grafting reaction under the gama ray radiation, so that the fluorinated graphene can be obtained. The method is simple in process, low in cost, environmentally-friendly and capable of achieving industrial batch production.
Description
Technical field
The invention belongs to inorganic carbon material modification field, particularly relate to a kind of method that gamma-ray irradiation one step is prepared fluorinated graphene.
Background technology
Graphene is a kind of New Two Dimensional plane nano material, and its carbon atom intensive by one deck, that be wrapped in honeycomb crystal lattice forms, and is the thinnest in the world two-dimensional material, and its thickness is only 0.35nm, and specific surface area is up to 2600m
2/ g, this special construction has contained abundant and novel physical phenomenon, makes Graphene show many excellent properties.For example, the intensity of Graphene is the highest in test material, is more than 100 times of steel; Its carrier mobility is the current twice of the known indium antimonide material with high mobility; Its thermal conductivity is adamantine 3 times; But also there is the special propertys such as room temperature quantum hall effect and room-temperature ferromagnetic.
But Graphene is the semiconductor material of zero band gap, need open its band gap to expand its range of application.Research at present all finds Graphene to fluoridize and can open its band gap, obtains fluorinated graphene.Fluorinated graphene is that a kind of physical strength is high, chemistry and the stable nano material of thermal property.The very similar tetrafluoroethylene of this novel material performance, is referred to as two-dimentional tetrafluoroethylene conventionally.But how obtaining easily fluorinated graphene is a current difficult problem.General method is as ageing in the method such as electrochemical process, Cement Composite Treated by Plasma fluorination effect has, and technique is loaded down with trivial details is difficult to be applied to large-scale industrial production.Gamma-rays is as a kind of method of effectively modified graphene structure and performance, can make the covalent linkage of Graphene inside open, heterogeneous element in grafting, the method also has the advantages such as modification is even, penetrance strong, green, low cost simultaneously, can be used for preparing on a large scale fluorinated graphene.
Summary of the invention
In order to address the above problem, the object of the present invention is to provide a kind of operating process simple, with low cost prepare the method for fluorinated graphene based on gamma-ray irradiation one step.
Prepare the method for fluorinated graphene based on gamma-ray irradiation one step, adopt gamma-rays containing CF
4gas in irradiation Graphene, obtain fluorographite ene product.
Containing CF
4mixed gas in CF
4volume concentration of gas phase is 20%～100%.
Graphene is placed in
60the irradiation source of Co is indoor, and radiation treatment temperature is 0～80 DEG C, and radiation dose rate is 0.6 × 10
3gy/h～4 × 10
3gy/h, irradiation dose is 1 × 10
4gy～5 × 10
5gy.
The method of preparing fluorinated graphene based on gamma-ray irradiation one step provided by the invention is to utilize the feature that gamma-rays particle energy is high, penetration power is strong, makes intercalation enter the CF between graphene layer
4with Graphene generation graft reaction, thereby form fluorinated graphene.It is simple, with low cost that the inventive method has operating process, and the advantages such as environmental protection can realize industrialized mass production.
Specific embodiments
Below in conjunction with specific embodiment, the method for preparing fluorinated graphene based on gamma-ray irradiation one step provided by the invention is elaborated.
Embodiment 1:
Graphene is placed on to CF
4with N
2mixed gas in carry out gamma-ray irradiation, CF
4volume concentration of gas phase is 50%, and radiation treatment temperature is 25 DEG C, and radiation dose rate is 2 × 10
3gy/h, irradiation dose is 1 × 10
5gy, irradiation time is 50 hours, makes fluorine element in Graphene grafting, obtains fluorinated graphene.
Embodiment 2:
Graphene is placed on to CF
4in gas, carry out gamma-ray irradiation, CF
4volume concentration of gas phase is 100%, and radiation treatment temperature is 70 DEG C, and radiation dose rate is 1 × 10
3gy/h, irradiation dose is 2 × 10
5gy, irradiation time is 200 hours, makes fluorine element in Graphene grafting, obtains fluorinated graphene.
Embodiment 3:
Graphene is placed on to CF
4carry out gamma-ray irradiation, CF with argon gas mixed gas
4volume concentration of gas phase is 80%, and radiation treatment temperature is 40 DEG C, and radiation dose rate is 4 × 10
3gy/h, irradiation dose is 2 × 10
4gy, irradiation time is 5 hours, makes fluorine element in Graphene grafting, obtains fluorinated graphene.
Embodiment 4:
Graphene is placed on to CF
4with in air gas mixture, carry out gamma-ray irradiation, CF
4volume concentration of gas phase is 90%, and radiation treatment temperature is 10 DEG C, and radiation dose rate is 2 × 10
3gy/h, irradiation dose is 4 × 10
5gy, irradiation time is 200 hours, makes fluorine element in Graphene grafting, obtains fluorinated graphene.
Claims (3)
1. a method of preparing fluorinated graphene based on gamma-ray irradiation one step, is characterized in that: adopt gamma-rays containing CF
4irradiation Graphene in the atmosphere of gas, obtains fluorographite ene product.
2. the method for preparing fluorinated graphene based on gamma-ray irradiation one step according to claim 1, is characterized in that: CF in mixed gas
4volume concentration of gas phase is 20%～100%.
3. the method for preparing fluorinated graphene based on gamma-ray irradiation one step according to claim 1, is characterized in that: Graphene is placed in
60the irradiation source of Co is indoor, and radiation treatment temperature is 0～80 DEG C, and radiation dose rate is 0.6 × 10
3gy/h～4 × 10
3gy/h, irradiation dose is 1 × 10
4gy～5 × 10
5gy.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410385041.7A CN104098093A (en) | 2014-08-01 | 2014-08-01 | Method for preparing fluorinated graphene based on gama ray irradiation |
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| CN201410385041.7A CN104098093A (en) | 2014-08-01 | 2014-08-01 | Method for preparing fluorinated graphene based on gama ray irradiation |
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| CN104098093A true CN104098093A (en) | 2014-10-15 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105088350A (en) * | 2015-08-17 | 2015-11-25 | 山东建筑大学 | Method for regulating electronic band gap in SiC-based epitaxial graphene |
| CN105948021A (en) * | 2016-04-23 | 2016-09-21 | 上海大学 | Method for preparing nitrogen-doped graphene quantum dots by using high-power electron beam irradiation process |
| CN109023453A (en) * | 2018-08-23 | 2018-12-18 | 安徽江杰实业有限公司 | A kind of processing method promoting stainless steel tube antiseptic property |
| CN114410009A (en) * | 2022-03-11 | 2022-04-29 | 广东新亚光电缆股份有限公司 | High-performance pipe and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102180462A (en) * | 2011-02-17 | 2011-09-14 | 无锡第六元素高科技发展有限公司 | Method for preparing modified graphene material in controlled atmosphere environment by microwave irradiation |
| CN102583358A (en) * | 2012-04-05 | 2012-07-18 | 天津工业大学 | Method for preparing functionalized graphene based on high-energy irradiation one-step method |
| CN103086366A (en) * | 2013-01-16 | 2013-05-08 | 天津工业大学 | Preparation method of amphiphilic fluorinated-oxidized graphene |
-
2014
- 2014-08-01 CN CN201410385041.7A patent/CN104098093A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102180462A (en) * | 2011-02-17 | 2011-09-14 | 无锡第六元素高科技发展有限公司 | Method for preparing modified graphene material in controlled atmosphere environment by microwave irradiation |
| CN102583358A (en) * | 2012-04-05 | 2012-07-18 | 天津工业大学 | Method for preparing functionalized graphene based on high-energy irradiation one-step method |
| CN103086366A (en) * | 2013-01-16 | 2013-05-08 | 天津工业大学 | Preparation method of amphiphilic fluorinated-oxidized graphene |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105088350A (en) * | 2015-08-17 | 2015-11-25 | 山东建筑大学 | Method for regulating electronic band gap in SiC-based epitaxial graphene |
| CN105948021A (en) * | 2016-04-23 | 2016-09-21 | 上海大学 | Method for preparing nitrogen-doped graphene quantum dots by using high-power electron beam irradiation process |
| CN105948021B (en) * | 2016-04-23 | 2018-06-01 | 上海大学 | The method that nitrogen-doped graphene quantum dot is prepared using high-energy electron beam irradiation method |
| CN109023453A (en) * | 2018-08-23 | 2018-12-18 | 安徽江杰实业有限公司 | A kind of processing method promoting stainless steel tube antiseptic property |
| CN114410009A (en) * | 2022-03-11 | 2022-04-29 | 广东新亚光电缆股份有限公司 | High-performance pipe and preparation method thereof |
| CN114410009B (en) * | 2022-03-11 | 2024-01-09 | 广东新亚光电缆股份有限公司 | High-performance pipe and preparation method thereof |
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Application publication date: 20141015 |