CN104089570A - Piezoresistive sensing element and manufacturing method thereof - Google Patents
Piezoresistive sensing element and manufacturing method thereof Download PDFInfo
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- CN104089570A CN104089570A CN201410338897.9A CN201410338897A CN104089570A CN 104089570 A CN104089570 A CN 104089570A CN 201410338897 A CN201410338897 A CN 201410338897A CN 104089570 A CN104089570 A CN 104089570A
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Abstract
The invention provides a piezoresistive sensing element. A diamond-like carbon film is used as the piezoresistive material of the piezoresistive sensing element and the piezoresistive sensing element is composed of a substrate, the diamond-like carbon film located on the surface of the substrate and a metal electrode located on the surface of the diamond-like carbon film. Compared with an existing piezoresistive sensing element, the piezoresistive sensing element has a high sensitivity coefficient GF value, meanwhile, the sensitivities in all directions are identical due to the isotropy of amorphous carbon and the GF value can be regulated by changing technological parameters; in addition, the element can work under special environments and working conditions such as strong acid, strong base and frictional contact service, and therefore the piezoresistive sensing element has good application prospects.
Description
Technical field
The invention belongs to piezoresistance sensor part technical field, relate in particular to a kind of pressure drag sensing element and preparation method thereof.
Background technology
At present, take the pressure drag MEMS (micro electro mechanical system) (MEMs) that single crystalline Si, polycrystalline Si, Ge and sige alloy be representative has obtained research widely and application.But, growing along with hi-tech industries such as electronic information, Aero-Space, ocean, biological medicines, the strain that traditional silicon Germanium based MEMs system is used and piezoresistance sensor have been difficult to meet harsher military service performance requirement, need research and development novel strain sensing material and sensor.
In pressure drag sensing material, sensitivity coefficient GF value is defined as the ratio of resistance change rate and deformation rate of change, is one of important parameter of pressure drag material, has reflected the sensitivity level of pressure drag material.
Monocrystalline silicon has higher GF value (～100), be widely used, but preparation cost is higher, and has anisotropy.Polycrystalline Si preparation cost is lower, is widely used in piezoresistance sensor, can realize microminiaturized and integrated trend, but the GF value of common polycrystalline Si is all lower than 30, and its sensitivity is extremely restricted.
In addition, while working under particular surroundings and special operation condition, the performance of piezoresistance sensor is had higher requirement.For example, while working in strong acid-base environment, require piezoresistance sensor to there is good acid-proof alkaline, while working in rubbing contact operating mode, require piezoresistance sensor to there is good crocking resistance.
Given this, traditional silicon Germanium based pressure drag MEMs system has faced performance boundary challenge, in the urgent need to the pressure drag sensing element of development of new.
Summary of the invention
For the above-mentioned state of the art, the present invention aims to provide a kind of pressure drag sensing element of new structure, and it has high sensitivity coefficient GF value, and has high-mechanical property, decay resistance etc. concurrently.
In order to realize above-mentioned technical purpose, the inventor, after great many of experiments exploratory development, be take diamond-like carbon film as pressure drag material, has designed pressure drag sensing element of the present invention.
Diamond-like carbon film, English name is Diamond like carbon, referred to as DLC, is the general designation of a large class amorphous carbon material.Conventionally, DLC film is mainly by passing through sp between C-C
2covalent bond and sp
3the irregular space reticulate texture that covalent bond forms, has isotropy.DLC film has many characteristics similar to diamond thin, such as high rigidity and modulus, low-friction coefficient, high chemical inertness, light transmission, electrical insulating property, corrosion resistance and biocompatibility, is therefore with a wide range of applications.In addition, DLC film can adopt several different methods to be prepared, and comprises ion beam depositing, sputtering sedimentation, vacuum cathode arc deposited, pulsed laser deposition, plasma immersion ion implantation and deposition, direct photo chemical vapor deposition, plasma enhanced chemical vapor deposition, galvanochemistry liquid deposition, Polymer-pyrolysis method etc.Wherein, the PVD such as ion beam and magnetron sputtering technology has advantages of low temperature large area deposition.
That is, the technical solution used in the present invention is: a kind of pressure drag sensing element, as shown in Figure 1, by substrate, diamond-like carbon film, metal electrode, formed, and diamond-like carbon film is positioned at substrate surface, and metal electrode is positioned at diamond-like carbon film surface.
Described diamond-like carbon film is the adamas phase sp by carbon
3with graphite-phase sp
2the amorphous materials that hybrid state is mixed to form, has isotropy.
Described substrate is not limit, and comprises PET, PI, PMMA, Al
2o
3, glass etc.
Described metal electrode material is not limit, and comprises W, Cr, Ti, Al, Ag etc.
The thickness of described diamond-like carbon film is not limit, and as preferably, thickness is 200～700nm.
The present invention also provides a kind of method of preparing above-mentioned pressure drag sensing element, comprises the steps:
Step 1: substrate is placed in to vacuum chamber, utilizes argon ion etching substrate surface;
Step 2: pass into hydrocarbon gas in plated film chamber, by after anode layer ion source ionization at substrate surface depositing diamond-like carbon film, ion gun electric current is 0.1A～0.5A, and in cavity, gaseous tension is 0.2Pa～1Pa, and substrate DC pulse bias voltage is-50V～-400V;
Step 3: the substrate of the surface deposition diamond-like carbon film that step 2 is obtained takes out from plated film chamber, on diamond-like carbon film surface, reserve and treat depositing electrode region, remaining region adopts mask plate to cover, and then put into cavity, adopt magnetron sputtering technique treating deposition region sputtering sedimentation metal electrode; Sputter gas is Ar, and sputtering target electric current is 1～5A, and cavity internal pressure is 0.2Pa～0.5Pa, and substrate DC pulse bias voltage is-50V～-100V.
In described step 2, hydrocarbon gas comprises C
2h
2, CH
4, C
6h
6deng one or more in gas.
In described step 3, metal electrode material comprises W, Cr, Ti, Al, Ag etc.
In sum, the present invention be take diamond-like carbon film as pressure drag material, at substrate surface, diamond-like carbon film is set, and on diamond-like carbon film surface, metal electrode is set, and forms pressure drag sensing element.Compare with existing pressure drag sensing element, pressure drag sensing element of the present invention has following technological merit:
(1) but with there is the monocrystalline silicon of high sensitivity coefficient anisotropic, and but the lower polysilicon sensing element of isotropic sensitivity coefficient is compared, should there is high sensitivity coefficient by the pressure drag sensing element based on amorphous carbon, and its non crystalline structure has determined that this pressure drag sensing element has isotropy, identical in the sensitivity of all directions;
(2) amorphous carbon-film of this pressure drag sensing element can be converted into lamellar graphite in friction process, can play the effect of wear resistant friction reducing, thereby this element can be applicable to the Application in Sensing that contact and friction exists;
(3) this pressure drag sensing element has fabulous chemical inertness, goes for the corrosion Service Environment such as highly acid and alkalescence;
(4) this pressure drag sensing element has the mechanical properties such as high elastic modulus and hardness, is beneficial to the mechanical stability of MEMs system;
(5) this pressure drag sensing element be take diamond-like carbon film as pressure drag material, and its electron transport is to be controlled by the Hopping mechanism of amorphous carbon, and electron transport is subject to sp
3in network structure, conduct electricity sp
2distance between cluster graphite-phase and sp
2the size of cluster is controlled, thereby by regulation and control experiment parameter, and such as carbon source kind and substrate bias etc. can change the sp of amorphous carbon-film
2and sp
3content, and sp
2cluster size, thus can regulate and control the GF value of element.
Accompanying drawing explanation
Fig. 1 is the structural representation of pressure drag sensing element of the present invention;
Fig. 2 is that the resistance change rate of pressure drag sensing element in the embodiment of the present invention 1 is with the variation relation figure of deformation;
Fig. 3 is that the resistance change rate of pressure drag sensing element in the embodiment of the present invention 2 is with the variation relation figure of deformation.
Embodiment
Below in conjunction with accompanying drawing, embodiment is described in further detail the present invention, it is pointed out that the following stated embodiment is intended to be convenient to the understanding of the present invention, and it is not played to any restriction effect.
Reference numeral in Fig. 1 is: 1-substrate, 2-amorphous carbon-film, 3-metal electrode.
Embodiment 1:
In the present embodiment, pressure drag sensing element structure as shown in Figure 1, is comprised of PET substrate 1, amorphous carbon-film 2, metal electrode 3, and diamond-like carbon film 2 is positioned at substrate 1 surface, and metal electrode 3 is positioned at diamond-like carbon film 2 surfaces.
The preparation method of this pressure drag sensing element comprises the steps:
(1) PET substrate, through ethanol ultrasonic cleaning, is dried and is placed in vacuum cavity, forvacuum to 2.5 * 10
-3pa; By anode layer ion source, in cavity, pass into argon gas, make air pressure maintain 0.37Pa, the DC pulse bias voltage of apply on substrate-100V, opens anode layer ion source, and electric current is 0.2A, utilizes ionization argon ion etching substrate surface, and this process maintains 5 minutes;
(2) by anode layer ion source, toward cavity, pass into C
2h
2gas aggradation amorphous carbon-film, keeps cavity air pressure at 0.23Pa, and electric current is at 0.2A, and substrate pulsed bias is-150V;
(3) substrate of surface deposition amorphous carbon-film step (2) being obtained takes out from cavity, what on amorphous carbon-film surface, reserve that 2 places are about 2mm * 1mm treats depositing electrode region, all the other regions adopt mask plate to cover, and then put into cavity, adopt magnetron sputtering technique treating depositing electrode region sputtering sedimentation Metal Cr electrode, sputter gas is Ar, and target current is 2.5A, keep cavity air pressure at 0.3Pa, substrate DC pulse bias voltage is-100V.
The above-mentioned pressure drag sensing element making carries out piezoresistive effect test, this pressure drag sensing element is stretched, and observes its resistance variations.Adopt micrometer stretching device and semiconductor parameter instrument, by micrometer stretching device, this pressure drag sensing element is applied to deformation; By semiconductor parameter instrument, test this pressure drag sensing element I-V curve at room temperature, calculate the resistance value R of linear contact region; Obtain the resistance change rate shown in Fig. 2 with the variation relation figure of deformation rate of change, by following formula:
(R0 is initial resistivity value, and R is stretched film resistance value, and ε is corresponding tensile strain), obtains maximum GF value and is about 160.
Comparative example 1:
The present embodiment is the comparative example of above-described embodiment 1.
In the present embodiment, pressure drag sensing element structure is identical with embodiment.
In the present embodiment, the preparation method of pressure drag sensing element is substantially the same manner as Example 1, and difference is: the be adjusted into-200V of substrate pulsed bias in step (2), thus adjust the sp in film
2and sp
3content.
The above-mentioned pressure drag sensing element making carries out piezoresistive effect test, and method of testing is identical with embodiment 1, and obtaining its GF maximal value is 55.98.
Embodiment 2:
In the present embodiment, pressure drag sensing element structure as shown in Figure 1, by Al
2o
3substrate, amorphous carbon-film, metal electrode form, and diamond-like carbon film is positioned at substrate surface, and metal electrode is positioned at diamond-like carbon film surface.
The preparation method of this pressure drag sensing element comprises the steps:
(1) Al
2o
3substrate, through ethanol ultrasonic cleaning, is dried and is placed in vacuum cavity, forvacuum to 2.0 * 10
-3pa; In cavity, pass into argon gas, make air pressure maintain 1Pa, the pulsed bias of apply on substrate-50V, utilizes ionization argon ion etching substrate surface, and this process maintains 20 minutes;
(2) by anode layer ion source, toward cavity, pass into C
2h
2gas aggradation amorphous carbon-film, keeps cavity air pressure at 0.3Pa, and electric current is at 0.2A, and substrate pulsed bias is-50V.
(3) substrate of surface deposition amorphous carbon-film step (2) being obtained takes out from cavity, on amorphous carbon-film surface, reserving 2 places is about 2mm * 1mm and treats depositing electrode region, all the other regions adopt mask plate to cover, and then put into cavity, adopt magnetron sputtering technique treating depositing electrode region sputtering sedimentation metal A l electrode, sputter gas is Ar, and target current is 2A, keep cavity air pressure at 0.3Pa, substrate DC pulse bias voltage is-100V.
The above-mentioned pressure drag sensing element making carries out piezoresistive effect test, this pressure drag sensing element is stretched, and observes its resistance variations.Adopt micrometer stretching device and semiconductor parameter instrument, by micrometer stretching device, this pressure drag sensing element is applied to deformation; By semiconductor parameter instrument, test this pressure drag sensing element I-V curve at room temperature, calculate the resistance value R of linear contact region; Obtain the resistance change rate shown in Fig. 3 with the variation relation figure of deformation rate of change, by following formula:
(R0 is initial resistivity value, and R is stretched film resistance stretched film resistance value, and ε is corresponding tensile strain), obtains its maximum GF value and is about 100.
Comparative example 2:
The present embodiment is the comparative example of above-described embodiment 2.
In the present embodiment, pressure drag sensing element structure is identical with embodiment 2.
In the present embodiment, the preparation method of pressure drag sensing element is substantially the same manner as Example 2, and difference is: the be adjusted into-100V of substrate pulsed bias in step (2), thus adjust the sp in film
2and sp
3content.
The above-mentioned pressure drag sensing element making carries out piezoresistive effect test, and method of testing is identical with embodiment 1, and obtaining its GF maximal value is 26.41.
Above-described embodiment has been described in detail technical scheme of the present invention; be understood that and the foregoing is only specific embodiments of the invention; be not limited to the present invention; all any modifications of making within the scope of principle of the present invention and improvement etc., within all should being included in protection scope of the present invention.
Claims (6)
1. a pressure drag sensing element, is characterized in that: substrate, diamond-like carbon film, metal electrode, consist of, diamond-like carbon film is positioned at substrate surface, and metal electrode is positioned at diamond-like carbon film surface.
2. pressure drag sensing element as claimed in claim 1, is characterized in that: described substrate is PET, PI, PMMA, Al
2o
3, a kind of in glass.
3. pressure drag sensing element as claimed in claim 1, is characterized in that: described metal electrode material is a kind of metal in W, Cr, Ti, Al, Ag or several alloys.
4. pressure drag sensing element as claimed in claim 1, is characterized in that: the thickness of described diamond-like carbon film is 200～700nm.
5. the method for the pressure drag sensing element described in arbitrary claim in preparation claim 1 to 4, is characterized in that: comprise the steps:
Step 1: substrate is placed in to vacuum chamber, utilizes argon ion etching substrate surface;
Step 2: pass into hydrocarbon gas in plated film chamber, by after anode layer ion source ionization at substrate surface depositing diamond-like carbon film, ion gun electric current is 0.1A～0.5A, and in cavity, gaseous tension is 0.2Pa～1Pa, and substrate DC pulse bias voltage is-50V～-400V;
Step 3: the substrate of the surface deposition diamond-like carbon film that step 2 is obtained takes out from plated film chamber, on diamond-like carbon film surface, reserve and treat depositing electrode region, remaining region adopts mask plate to cover, and then put into cavity, adopt magnetron sputtering technique treating deposition region sputtering sedimentation metal electrode; Sputter gas is Ar, and sputtering target electric current is 1～5A, and cavity internal pressure is 0.2Pa～0.5Pa, and substrate DC pulse bias voltage is-50V～-100V.
6. the preparation method of pressure drag sensing element as claimed in claim 5, is characterized in that: in described step 2, hydrocarbon gas is C
2h
2, CH
4, C
6h
6one or more in gas.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106290983A (en) * | 2016-07-28 | 2017-01-04 | 西安交通大学 | A kind of acceleration sensor chip based on amorphous carbon film |
| CN107957303A (en) * | 2017-11-13 | 2018-04-24 | 苏州科技大学 | A kind of flexible wearable amorphous carbon based stress sensor and preparation method thereof |
| CN107993972A (en) * | 2017-11-13 | 2018-05-04 | 苏州科技大学 | A kind of flexible electronic functional material and preparation method thereof |
| CN108709490A (en) * | 2018-06-27 | 2018-10-26 | 常州二维碳素科技股份有限公司 | Strain gauge transducer and the method and measurement device for utilizing its acquisition highly sensitive |
| CN110184577A (en) * | 2019-06-19 | 2019-08-30 | 中国科学院宁波材料技术与工程研究所 | Flexible substrates surface has both the preparation method and applications of the amorphous carbon-film of pressure drag performance and toughness |
| CN115896720A (en) * | 2022-10-26 | 2023-04-04 | 广东工业大学 | Pressure sensing film material and preparation method and application thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106290983A (en) * | 2016-07-28 | 2017-01-04 | 西安交通大学 | A kind of acceleration sensor chip based on amorphous carbon film |
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| CN107993972A (en) * | 2017-11-13 | 2018-05-04 | 苏州科技大学 | A kind of flexible electronic functional material and preparation method thereof |
| CN108709490A (en) * | 2018-06-27 | 2018-10-26 | 常州二维碳素科技股份有限公司 | Strain gauge transducer and the method and measurement device for utilizing its acquisition highly sensitive |
| CN110184577A (en) * | 2019-06-19 | 2019-08-30 | 中国科学院宁波材料技术与工程研究所 | Flexible substrates surface has both the preparation method and applications of the amorphous carbon-film of pressure drag performance and toughness |
| CN115896720A (en) * | 2022-10-26 | 2023-04-04 | 广东工业大学 | Pressure sensing film material and preparation method and application thereof |
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| CN104089570B (en) | 2016-08-17 |
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