CN104078592A - Organic light-emitting diode and preparation method thereof - Google Patents

Organic light-emitting diode and preparation method thereof Download PDF

Info

Publication number
CN104078592A
CN104078592A CN201310101429.5A CN201310101429A CN104078592A CN 104078592 A CN104078592 A CN 104078592A CN 201310101429 A CN201310101429 A CN 201310101429A CN 104078592 A CN104078592 A CN 104078592A
Authority
CN
China
Prior art keywords
barrier layer
layer
organic
organic barrier
phenyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201310101429.5A
Other languages
Chinese (zh)
Inventor
周明杰
钟铁涛
王平
陈吉星
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
Original Assignee
Oceans King Lighting Science and Technology Co Ltd
Shenzhen Oceans King Lighting Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oceans King Lighting Science and Technology Co Ltd, Shenzhen Oceans King Lighting Engineering Co Ltd filed Critical Oceans King Lighting Science and Technology Co Ltd
Priority to CN201310101429.5A priority Critical patent/CN104078592A/en
Publication of CN104078592A publication Critical patent/CN104078592A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The invention aims at providing an organic light-emitting diode in a packaging layer structure. A packaging layer is in a composite structure formed by overlapping a packaging layer unit, and the packaging layer unit comprises a first organic barrier layer, a second organic barrier layer, a mixed barrier layer, a third organic barrier layer, a fourth organic barrier layer and an inorganic barrier layer which are laminated sequentially. Corrosion of active substances such as external water and oxygen to the organic light-emitting diode can be avoided effectively, and the service life of the organic light-emitting diode can be prolonged. The invention further provides a preparation method of the organic light-emitting diode. The preparation method is simple in technology and cheap in raw material, and facilitates large area preparation.

Description

A kind of organic electroluminescence device and preparation method thereof
Technical field
The present invention relates to organic electroluminescent field, relate in particular to a kind of organic electroluminescence device and preparation method thereof.
Background technology
Organic electroluminescence device (OLED) is a kind of taking organic material as luminescent material, the energy conversion device that can be luminous energy the electric energy conversion applying.It has the outstanding properties such as ultra-thin, self-luminous, response are fast, low-power consumption, has application prospect very widely in fields such as demonstration, illuminations.
The structure of organic electroluminescence device is sandwich structure, between negative electrode and anode, accompanies organic luminous layer.Organic substance in the luminescent layer of OLED is very responsive to the pollutant in atmosphere, oxygen and moisture, if Long Term Contact can reduce the luminescent properties of organic electroluminescence device and shorten its useful life, and the cathode material of OLED mostly is the more active metal of chemical property, very easily in air or in other atmosphere containing aerobic, steam, suffer erosion.Therefore, usually need OLED to carry out packaging protection processing, make the isolation of luminescent device and external environment, preventing that water from dividing, the intrusion of pernicious gas etc., and then stability and the useful life of improving OLED.
For flexible OLED product, if use traditional OLED encapsulation technology, add encapsulation cover plate in device back, can produce the problems such as weight is large, cost is high, bad mechanical strength, limit the performance performance of flexible OLED product.At present, the waterproof oxygen of most flexible OLED is indifferent, and useful life is shorter, and complicated process of preparation, cost are high.
Summary of the invention
In order to address the above problem, the present invention aims to provide a kind of organic electroluminescence device with encapsulation layer structure, this encapsulation layer structure can prevent outside water, the erosion of oxygen isoreactivity material to organic electroluminescence device effectively, can extend the useful life of organic electroluminescence device.The present invention also provides a kind of preparation method of organic electroluminescence device, and this preparation method's technique is simple, and raw material cheapness is easy to large area preparation.
First aspect, the invention provides a kind of organic electroluminescence device, comprises the anode conducting substrate, light emitting functional layer, negative electrode and the encapsulated layer that stack gradually, it is characterized in that, described encapsulated layer is the composite construction being formed by encapsulated layer cells overlap; Described encapsulated layer unit comprises the first organic barrier layer, second organic barrier layer, mixing barrier layer, the 3rd organic barrier layer, the 4th organic barrier layer and the inorganic barrier layer that stack gradually;
The material on described first organic barrier layer and the 3rd organic barrier layer is all selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines, oxine aluminium, 4,4', 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine, 2,9-dimethyl-4,7-diphenyl-1, one in 10-phenanthroline and 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene; The material on described second organic barrier layer and the 4th organic barrier layer is all selected from 4,7-diphenyl-1,10-phenanthroline, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene, oxine aluminium, two (2-methyl-oxine-N1, O8)-(1,1'-biphenyl-4-hydroxyl) aluminium and 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1, the one in 2,4-triazole;
The material on described mixing barrier layer is the first composite material that metal oxide, metal fluoride and metallo phthalocyanine are mixed to form, described metal oxide is molybdenum trioxide, vanadic oxide, tungstic acid, cesium oxide, nickel oxide or manganese dioxide, and described metal fluoride is lithium fluoride, cerium fluoride, magnesium fluoride, aluminum fluoride, calcirm-fluoride or barium fluoride; The material of described inorganic barrier layer is a kind of the second composite material being mixed to form in a kind of and silicon nitride in Nitinol, silver-cadmium alloy, copper cadmium alloy, albronze, corronil, alumin(i)um zinc alloy, aluminium nitride, boron nitride, hafnium nitride, tantalum nitride, titanium nitride.
Preferably, the material of anode conducting substrate is conducting glass substrate or conduction organic film substrate.More preferably, anode conducting substrate is indium tin oxide (ITO).
Preferably, the thickness of anode conducting substrate is 100nm.
Light emitting functional layer is arranged on anode conducting substrate.
Preferably, light emitting functional layer comprises the hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer that stack gradually.
Preferably, the material of hole injection layer is by molybdenum trioxide (MoO 3) mix 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl according to doping mass fraction 30%] the middle mixture forming of cyclohexane (NPB).
Preferably, the thickness of hole injection layer is 10nm.
Preferably, the material of hole transmission layer is 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA).
Preferably, the thickness of hole transmission layer is 30nm.
Preferably, the material of luminescent layer is that three (2-phenylpyridines) close iridium (Ir (ppy) 3) mix according to doping mass fraction 5% mixture forming in 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi).
Preferably, the thickness of luminescent layer is 20nm.
Preferably, the material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen).
Preferably, the thickness of electron transfer layer is 10nm.
Preferably, the material of electron injecting layer is cesium azide (CsN 3) mix 4,7-diphenyl-1 according to doping mass fraction 30%, the mixture forming in 10-phenanthroline (Bphen).
Preferably, the thickness of electron injecting layer is 20nm.
Negative electrode is arranged in light emitting functional layer.
Preferably, the material of negative electrode is aluminium (Al).
Preferably, the thickness of negative electrode is 100nm.
At negative electrode arranged outside encapsulated layer, encapsulated layer is the composite construction that encapsulated layer cells overlap forms.Particularly, encapsulated layer unit comprises the first organic barrier layer, second organic barrier layer, mixing barrier layer, the 3rd organic barrier layer, the 4th organic barrier layer and the inorganic barrier layer that stack gradually.
Preferably, the encapsulated layer being formed by encapsulated layer cells overlap comprises 2～4 encapsulated layer unit.
Alternately laminated by by organic barrier layer and inorganic barrier layer, adjust ratio and the consumption of each material, the superiority and inferiority on inorganic barrier layer and organic barrier layer can be carried out complementary balancedly, have better sealing, the vapor permeability (WVTR) that can control luminescent device 10 simultaneously -4g/ (m 2day) order of magnitude.
Organic film material low cost, be easy to processing, use organic barrier layer can improve surperficial evenness, avoid simultaneously inorganic barrier layer produce defect.
The material on first organic barrier layer is 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), oxine aluminium (Alq3), 4,4', 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline or 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi).
Preferably, the thickness on first organic barrier layer is 200nm～300nm.
The material on second organic barrier layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), oxine aluminium (Alq3), two (2-methyl-oxine-N1, O8)-(1,1'-biphenyl-4-hydroxyl) aluminium (Balq) or 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole (TAZ).
Preferably, the thickness on second organic barrier layer is 200nm～300nm.
Metallo phthalocyanine is the class formation macrocyclic compound similar to metalloporphyrin, chemical stability is very high, there is good heat-resisting, sun-proof, acidproof, alkali resistance and poor dissolubility, metallo phthalocyanine is polycrystalline structure, its structure has very strong scattering process to light, during for flexible OLED product, can improve the light transmission rate of luminescent device.Meanwhile, metal oxide and metal fluoride be stable chemical nature under normal temperature and hot conditions conventionally, and is difficult for by inorganic acid and water erosion, has good corrosion-resistant, fire-resistance property.The present invention mixes metal oxide, metal fluoride and metallo phthalocyanine, regulates both ratio preparations to mix barrier layer, can obtain good steam isolation effect, and the luminescent device obtaining has good sealing.
Mix the material on barrier layer and formed by three kinds of materials, the first composite material being mixed to form for metal oxide, metal fluoride and metallo phthalocyanine.
Metal oxide is molybdenum trioxide (MoO 3), vanadic oxide (V 2o 5), tungstic acid (WO 3), cesium oxide (Cs 2o), nickel oxide (NiO) or manganese dioxide (MnO 2).
Metal fluoride is lithium fluoride (LiF), cerium fluoride (CeF 2), magnesium fluoride (MgF 2), aluminum fluoride (AlF 3), calcirm-fluoride (CaF 2) or barium fluoride (BaF 2).
Metallo phthalocyanine is CuPc (CuPc), Phthalocyanine Zinc (ZnPc), FePC (FePc), Cobalt Phthalocyanine (CoPc), manganese phthalocyanine (MnPc) or Nickel Phthalocyanine (NiPc).
Preferably, the mass fraction of metal oxide in the first composite material is 10%～30%, and the mass fraction of metallo phthalocyanine in the first composite material is 10%～30%.
Preferably, the thickness on mixing barrier layer is 100nm～200nm.
The material on the 3rd organic barrier layer is 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), oxine aluminium (Alq3), 4,4', 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) or 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi).
Preferably, the thickness on the 3rd organic barrier layer is 200nm～300nm.
The material on the 4th organic barrier layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), oxine aluminium (Alq3), two (2-methyl-oxine-N1, O8)-(1,1'-biphenyl-4-hydroxyl) aluminium (Balq) or 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole (TAZ).
Preferably, the thickness on the 4th organic barrier layer is 200nm～300nm.
The material of inorganic barrier layer is made up of two kinds of materials, is one and silicon nitride (Si in Nitinol (NiTi), silver-cadmium alloy (AgCd), copper cadmium alloy (CuCd), albronze (CuAl), corronil (CuNi), alumin(i)um zinc alloy (AlZn) 3n 4), a kind of the second composite material being mixed to form in aluminium nitride (AlN), boron nitride (BN), hafnium nitride (HfN), tantalum nitride (TaN), titanium nitride (TiN).
Preferably, Nitinol, silver-cadmium alloy, copper cadmium alloy, albronze, corronil or the alumin(i)um zinc alloy mass fraction in the second composite material is 10%～30%.
The bianry alloy that the present invention uses comprises Nitinol, silver-cadmium alloy, copper cadmium alloy, albronze, corronil and alumin(i)um zinc alloy, can buy from market.
Alloy has outstanding resistance to corrosion, and silicon nitride (Si 3n 4), the nitride stable chemical nature such as aluminium nitride (AlN), boron nitride (BN), hafnium nitride (HfN), tantalum nitride (TaN), titanium nitride (TiN), be difficult for by inorganic acid and water erosion, high temperature resistant, shock-resistant, both mixing are used the stability that can strengthen organic electroluminescence device.
Preferably, the thickness of inorganic barrier layer is 100nm～200nm.
Second aspect, the invention provides a kind of preparation method of organic electroluminescence device, comprises the following steps:
Step 1, provide clean anode conducting substrate, and described anode conducting substrate is carried out to activation processing;
Step 2, prepare light emitting functional layer and negative electrode at described anode conducting substrate surface successively vacuum evaporation;
Step 3, prepare encapsulated layer at described cathode surface, method is as follows:
S1) prepare first organic barrier layer and second organic barrier layer at described cathode surface successively vacuum evaporation, evaporation condition is vacuum degree 1 × 10 -5pa～1 × 10 -3pa, evaporation rate
S2) mix barrier layer in described second organic barrier layer surface vacuum evaporation preparation, evaporation condition is vacuum degree 1 × 10 -5pa～1 × 10 -3pa, evaporation rate
S3) prepare the 3rd organic barrier layer and the 4th organic barrier layer at described mixing barrier layer surface successively vacuum evaporation, evaporation condition is vacuum degree 1 × 10 -5pa～1 × 10 -3pa, evaporation rate
S4) prepare inorganic barrier layer at described the 4th organic barrier layer surface magnetron sputtering, the condition of magnetron sputtering is vacuum degree 1 × 10 -5～1 × 10 -3pa, accelerating voltage 300～800V, magnetic field 50～200G, power density 1～40W/cm 2;
The material on described first organic barrier layer and the 3rd organic barrier layer is all selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines, oxine aluminium, 4,4', 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine, 2,9-dimethyl-4,7-diphenyl-1, one in 10-phenanthroline and 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene; The material on described second organic barrier layer and the 4th organic barrier layer is all selected from 4,7-diphenyl-1,10-phenanthroline, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene, oxine aluminium, two (2-methyl-oxine-N1, O8)-(1,1'-biphenyl-4-hydroxyl) aluminium and 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1, the one in 2,4-triazole;
The material on described mixing barrier layer is the first composite material that metal oxide, metal fluoride and metallo phthalocyanine are mixed to form, described metal oxide is molybdenum trioxide, vanadic oxide, tungstic acid, cesium oxide, nickel oxide or manganese dioxide, and described metal fluoride is lithium fluoride, cerium fluoride, magnesium fluoride, aluminum fluoride, calcirm-fluoride or barium fluoride; The material of described inorganic barrier layer is a kind of the second composite material being mixed to form in a kind of and silicon nitride in Nitinol, silver-cadmium alloy, copper cadmium alloy, albronze, corronil, alumin(i)um zinc alloy, aluminium nitride, boron nitride, hafnium nitride, tantalum nitride, titanium nitride;
After S1～S4 step completes, make an encapsulated layer unit;
Step 4, repeating step S1～S4, make the encapsulated layer with composite construction, finally obtains described organic electroluminescence device.
In step 1, by the cleaning of antianode electrically-conductive backing plate, remove the organic pollution of anode conducting substrate surface.
Particularly, the clean operation of anode conducting substrate is: anode conducting substrate is cleaned in supersonic wave cleaning machine with acetone, ethanol, deionized water, ethanol successively, then dry up with nitrogen, stove-drying, obtains clean anode conducting substrate.
Anode conducting substrate after cleaning is carried out to surface activation process, to increase the oxygen content of conductive surface layer, improve the work function of conductive layer surface.
Preferably, the material of anode conducting substrate is conducting glass substrate or conduction organic film substrate.More preferably, anode conducting substrate is indium tin oxide (ITO).
Preferably, the thickness of anode conducting substrate is 100nm.
In step 2, light emitting functional layer is arranged on anode conducting substrate by vacuum evaporation.
Preferably, when vacuum evaporation light emitting functional layer, condition is vacuum degree 1 × 10 -5pa, evaporation rate
Preferably, light emitting functional layer comprises the hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer that stack gradually.
Preferably, the material of hole injection layer is by molybdenum trioxide (MoO 3) mix 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl according to doping mass fraction 30%] the middle mixture forming of cyclohexane (NPB).
Preferably, the thickness of hole injection layer is 10nm.
Preferably, the material of hole transmission layer is 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA).
Preferably, the thickness of hole transmission layer is 30nm.
Preferably, the material of luminescent layer is that three (2-phenylpyridines) close iridium (Ir (ppy) 3) mix according to doping mass fraction 5% mixture forming in 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi).
Preferably, the thickness of luminescent layer is 20nm.
Preferably, the material of electron transfer layer is 4,7-diphenyl-1,10-phenanthroline (Bphen).
Preferably, the thickness of electron transfer layer is 10nm.
Preferably, the material of electron injecting layer is cesium azide (CsN 3) mix 4,7-diphenyl-1 according to doping mass fraction 30%, the mixture forming in 10-phenanthroline (Bphen).
Preferably, the thickness of electron injecting layer is 20nm.
Negative electrode is arranged in light emitting functional layer by vacuum evaporation.
Preferably, condition is vacuum degree 1 × 10 when vacuum evaporation negative electrode -5pa, evaporation rate
Preferably, the material of negative electrode is aluminium (Al).
Preferably, the thickness of negative electrode is 100nm.
In step 3, prepare encapsulated layer at described cathode surface.
Encapsulated layer obtains by vacuum evaporation encapsulated layer unit, and encapsulated layer unit passes through the organic barrier layer of vacuum evaporation first, second organic barrier layer, mixing barrier layer, the 3rd organic barrier layer, the 4th organic barrier layer successively, and magnetron sputtering inorganic barrier layer obtains.
Preferably, the encapsulated layer being formed by encapsulated layer cells overlap comprises 2～4 encapsulated layer unit.
The material on first organic barrier layer is 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), oxine aluminium (Alq3), 4,4', 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) or 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi).
Preferably, the thickness on first organic barrier layer is 200nm～300nm.
The material on second organic barrier layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), oxine aluminium (Alq3), two (2-methyl-oxine-N1, O8)-(1,1'-biphenyl-4-hydroxyl) aluminium (Balq) or 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole (TAZ).
Preferably, the thickness on second organic barrier layer is 200nm～300nm.
Metallo phthalocyanine is the class formation macrocyclic compound similar to metalloporphyrin, chemical stability is very high, there is good heat-resisting, sun-proof, acidproof, alkali resistance and poor dissolubility, metallo phthalocyanine is polycrystalline structure, its structure has very strong scattering process to light, during for flexible OLED product, can improve the light transmission rate of luminescent device.Meanwhile, metal oxide and metal fluoride be stable chemical nature under normal temperature and hot conditions conventionally, and is difficult for by inorganic acid and water erosion, has good corrosion-resistant, fire-resistance property.The present invention mixes metal oxide, metal fluoride and metallo phthalocyanine, regulates both ratio preparations to mix barrier layer, can obtain good steam isolation effect, and the luminescent device obtaining has good sealing.
Mix the material on barrier layer and formed by three kinds of materials, the first composite material being mixed to form for metal oxide, metal fluoride and metallo phthalocyanine.
Metal oxide is molybdenum trioxide (MoO 3), vanadic oxide (V 2o 5), tungstic acid (WO 3), cesium oxide (Cs 2o), nickel oxide (NiO) or manganese dioxide (MnO 2).
Metal fluoride is lithium fluoride (LiF), cerium fluoride (CeF 2), magnesium fluoride (MgF 2), aluminum fluoride (AlF 3), calcirm-fluoride (CaF 2) or barium fluoride (BaF 2).
Metallo phthalocyanine is CuPc (CuPc), Phthalocyanine Zinc (ZnPc), FePC (FePc), Cobalt Phthalocyanine (CoPc), manganese phthalocyanine (MnPc) or Nickel Phthalocyanine (NiPc).
Preferably, the mass fraction of metal oxide in the first composite material is 10%～30%, and the mass fraction of metallo phthalocyanine in the first composite material is 10%～30%.
Preferably, the thickness on mixing barrier layer is 100nm～200nm.
Alternately laminated by by organic barrier layer and inorganic barrier layer, adjust ratio and the consumption of each material, the superiority and inferiority on inorganic barrier layer and organic barrier layer can be carried out complementary balancedly, have better sealing, the vapor permeability (WVTR) that can control luminescent device 10 simultaneously -4g/ (m 2day) order of magnitude.
Organic film material low cost, be easy to processing, use organic barrier layer can improve surperficial evenness, avoid simultaneously inorganic barrier layer produce defect.
The material on the 3rd organic barrier layer is 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane (TAPC), N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines (NPB), oxine aluminium (Alq3), 4,4', 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine (m-MTDATA), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) or 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi).
Preferably, the thickness on the 3rd organic barrier layer is 200nm～300nm.
The material on the 4th organic barrier layer is 4,7-diphenyl-1,10-phenanthroline (Bphen), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), oxine aluminium (Alq3), two (2-methyl-oxine-N1, O8)-(1,1'-biphenyl-4-hydroxyl) aluminium (Balq) or 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1,2,4-triazole (TAZ).
Preferably, the thickness on the 4th organic barrier layer is 200nm～300nm.
The material of inorganic barrier layer is made up of two kinds of materials, is a kind of the second composite material being mixed to form in a kind of and silicon nitride in nickel Nitinol, silver-cadmium alloy, copper cadmium alloy, albronze, corronil, alumin(i)um zinc alloy, aluminium nitride, boron nitride, hafnium nitride, tantalum nitride, titanium nitride.
Preferably, nickel Nitinol, silver-cadmium alloy, copper cadmium alloy, albronze, corronil or the alumin(i)um zinc alloy mass fraction in the second composite material is 10%～30%.
The bianry alloy that the present invention uses comprises Nitinol, silver-cadmium alloy, copper cadmium alloy, albronze, corronil and alumin(i)um zinc alloy, can buy from market.
Alloy has outstanding resistance to corrosion, and silicon nitride (Si 3n 4), the nitride stable chemical nature such as aluminium nitride (AlN), boron nitride (BN), hafnium nitride (HfN), tantalum nitride (TaN), titanium nitride (TiN), be difficult for by inorganic acid and water erosion, high temperature resistant, shock-resistant, both mixing are used the stability that can strengthen organic electroluminescence device.
Preferably, the thickness of inorganic barrier layer is 100nm～200nm.
After completing steps three, make an encapsulated layer unit in negative electrode outside, comprised the first organic barrier layer, second organic barrier layer, mixing barrier layer, the 3rd organic barrier layer, the 4th organic barrier layer and the inorganic barrier layer that stack gradually.
In step 4, adopt the condition identical with step 3, repeating step three, makes the encapsulated layer with composite construction, finally obtains described organic electroluminescence device.
Preferably, step 3 is implemented 2～4 times, the encapsulated layer with composite construction obtaining comprises 2～4 encapsulated layer unit.
The present invention has following beneficial effect:
(1) a kind of organic electroluminescence device with encapsulation layer structure provided by the invention, can prevent outside water, the erosion of oxygen isoreactivity material to organic electroluminescence device effectively, has good sealing and longer useful life.
(2) preparation method of a kind of organic electroluminescence device provided by the invention, this preparation method's technique is simple, and raw material cheapness is easy to large area preparation.
Brief description of the drawings
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, to the accompanying drawing of required use in embodiment or description of the Prior Art be briefly described below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the structure chart of the organic electroluminescence device that provides of the embodiment of the present invention 6.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiment.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1:
A kind of organic electroluminescence device, makes by following operating procedure:
(1) provide clean anode conducting substrate:
Ito glass substrate is cleaned in supersonic wave cleaning machine with acetone, ethanol, deionized water, ethanol successively, and individual event washing is cleaned 5 minutes, then dries up with nitrogen, and stove-drying is stand-by; Ito glass after cleaning is carried out to surface activation process; ITO thickness is 100nm;
(2) vacuum evaporation light emitting functional layer on ito glass substrate:
Particularly, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer are prepared in vacuum evaporation successively;
The preparation of hole injection layer: by MoO 3be doped in NPB doping mass fraction 30%, thickness 10nm, vacuum degree 1 × 10 -5pa, evaporation rate
The preparation of hole transmission layer: adopt 4,4', 4''-tri-(carbazole-9-yl) triphenylamine (TCTA) is as hole mobile material, vacuum degree 1 × 10 -5pa, evaporation rate evaporation thickness 30nm;
The preparation of luminescent layer: material of main part adopts 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene (TPBi), guest materials adopts three (2-phenylpyridines) to close iridium (Ir (ppy) 3), doping mass fraction 5%, vacuum degree 1 × 10 -5pa, evaporation rate evaporation thickness 20nm;
The preparation of electron transfer layer: evaporation 4,7-diphenyl-1,10-phenanthroline (Bphen) is as electron transfer layer, vacuum degree 1 × 10 -5pa, evaporation rate evaporation thickness 10nm;
The preparation of electron injecting layer: by CsN 3mix in Bphen doping mass fraction 30%, vacuum degree 1 × 10 -5pa, evaporation rate evaporation thickness 20nm;
(3) prepare negative electrode on light emitting functional layer surface:
Metallic cathode adopts aluminium (Al), and thickness is 100nm, vacuum degree 1 × 10 -5pa, evaporation rate
(4) prepare encapsulated layer in negative electrode outside:
An encapsulated layer unit, makes by the following method: vacuum evaporation is prepared first organic barrier layer, second organic barrier layer, mixed barrier layer, the 3rd organic barrier layer, the 4th organic barrier layer and inorganic barrier layer successively, particularly:
The making on first organic barrier layer: adopt the material of TAPC as first organic barrier layer, vacuum degree 1 × 10 -5pa, evaporation rate thickness 200nm;
The making on second organic barrier layer: adopt the material of Bphen as second organic barrier layer, vacuum degree 1 × 10 -5pa, evaporation rate thickness 200nm;
Mix the making on barrier layer: mixing barrier layer and be made up of three kinds of materials, is MoO 3, LiF and CuPc, wherein MoO 3mass fraction is that 30%, CuPc mass fraction is 10%, and evaporation condition is vacuum degree 1 × 10 -5pa, evaporation rate thickness 200nm;
The making on the 3rd organic barrier layer: adopt the material of TAPC as the 3rd organic barrier layer, vacuum degree 1 × 10 -5pa, evaporation rate thickness 200nm;
The making on the 4th organic barrier layer: adopt the material of Bphen as the 4th organic barrier layer, vacuum degree 1 × 10 -5pa, evaporation rate thickness 200nm;
The making of inorganic barrier layer: inorganic barrier layer is made up of two kinds of materials is Si 3n 4and NiTi, wherein CdS mass fraction is 30%, adopts magnetically controlled sputter method to make, base vacuum degree 1 × 10 -5pa, accelerating voltage 300V, magnetic field 50G, power density 1W/cm 2, thickness 200nm;
The making step of above encapsulated layer unit is implemented 4 times, prepared 4 encapsulated layer unit, obtain the encapsulated layer that formed by 4 encapsulated layer cells overlaps, finally make organic electroluminescence device.
Embodiment 2:
A kind of organic electroluminescence device, makes by following operating procedure:
(1), (2), (3) are with embodiment 1;
(4) prepare encapsulated layer in negative electrode outside:
An encapsulated layer unit, makes by the following method: vacuum evaporation is prepared first organic barrier layer, second organic barrier layer, mixed barrier layer, the 3rd organic barrier layer, the 4th organic barrier layer and inorganic barrier layer successively, particularly:
The making on first organic barrier layer: adopt the material of NPB as first organic barrier layer, vacuum degree 1 × 10 -4pa, evaporation rate thickness 300nm;
The making on second organic barrier layer: adopt the material of BCP as second organic barrier layer, vacuum degree 1 × 10 -4pa, evaporation rate thickness 300nm;
Mix the making on barrier layer: mixing barrier layer and be made up of three kinds of materials, is V 2o 5, CeF 2and ZnPc, wherein V 2o 5mass fraction is that 10%, ZnPc mass fraction is 30%, and evaporation condition is vacuum degree 1 × 10 -5pa, evaporation rate thickness 100nm;
The making on the 3rd organic barrier layer: adopt the material of NPB as first organic barrier layer, vacuum degree 1 × 10 -4pa, evaporation rate thickness 300nm;
The making on the 4th organic barrier layer: adopt the material of BCP as second organic barrier layer, vacuum degree 1 × 10 -4pa, evaporation rate thickness 300nm;
The making of inorganic barrier layer: inorganic barrier layer is made up of two kinds of materials, is AlN and AgCd, and wherein AgCd mass fraction is 20%, adopts magnetically controlled sputter method to make, base vacuum degree 1 × 10 -4pa, accelerating voltage 500V, magnetic field 100G, power density 20W/cm 2, thickness 150nm;
The making step of above encapsulated layer unit is implemented 3 times, prepared 3 encapsulated layer unit, obtain the encapsulated layer that formed by 3 encapsulated layer cells overlaps, finally make organic electroluminescence device.
Embodiment 3:
A kind of organic electroluminescence device, makes by following operating procedure:
(1), (2), (3) are with embodiment 1;
(4) prepare encapsulated layer in negative electrode outside:
An encapsulated layer unit, makes by the following method: vacuum evaporation is prepared first organic barrier layer, second organic barrier layer, mixed barrier layer, the 3rd organic barrier layer, the 4th organic barrier layer and inorganic barrier layer successively, particularly:
The making on first organic barrier layer: adopt the material of Alq3 as first organic barrier layer, vacuum degree 1 × 10 -4pa, evaporation rate thickness 250nm;
The making on second organic barrier layer: adopt the material of TPBi as second organic barrier layer, vacuum degree 1 × 10 -4pa, evaporation rate thickness 250nm;
Mix the making on barrier layer: mixing barrier layer and be made up of three kinds of materials, is WO 3, MgF 2and FePc, wherein WO 3mass fraction is that 20%, FePc mass fraction is 15%, and evaporation condition is vacuum degree 5 × 10 -5pa, evaporation rate thickness 160nm;
The making on the 3rd organic barrier layer: adopt the material of Alq3 as first organic barrier layer, vacuum degree 1 × 10 -4pa, evaporation rate thickness 250nm;
The making on the 4th organic barrier layer: adopt the material of TPBi as second organic barrier layer, vacuum degree 1 × 10 -4pa, evaporation rate thickness 250nm;
The making of inorganic barrier layer: inorganic barrier layer is made up of two kinds of materials, is BN and CuCd, and wherein CuCd mass fraction is 10%, adopts magnetically controlled sputter method to make, base vacuum degree 1 × 10 -4pa, accelerating voltage 600V, magnetic field 120G, power density 25W/cm 2, thickness 140nm;
The making step of above encapsulated layer unit is implemented 3 times, prepared 3 encapsulated layer unit, obtain the encapsulated layer that formed by 3 encapsulated layer cells overlaps, finally make organic electroluminescence device.
Embodiment 4:
A kind of organic electroluminescence device, makes by following operating procedure:
(1), (2), (3) are with embodiment 1;
(4) prepare encapsulated layer in negative electrode outside:
An encapsulated layer unit, makes by the following method: vacuum evaporation is prepared first organic barrier layer, second organic barrier layer, mixed barrier layer, the 3rd organic barrier layer, the 4th organic barrier layer and inorganic barrier layer successively, particularly:
The making on first organic barrier layer: adopt the material of m-MTDATA as first organic barrier layer, vacuum degree 1 × 10 -4pa, evaporation rate thickness 220nm;
The making on second organic barrier layer: adopt the material of Alq3 as second organic barrier layer, vacuum degree 1 × 10 -4pa, evaporation rate thickness 240nm;
Mix the making on barrier layer: mixing barrier layer and be made up of three kinds of materials, is Cs 2o, AlF 3and CoPc, wherein Cs 2o mass fraction is that 20%, CoPc mass fraction is 20%, and evaporation condition is vacuum degree 5 × 10 -5pa, evaporation rate thickness 150nm;
The making on the 3rd organic barrier layer: adopt the material of m-MTDATA as first organic barrier layer, vacuum degree 1 × 10 -4pa, evaporation rate thickness 220nm;
The making on the 4th organic barrier layer: adopt the material of Alq3 as second organic barrier layer, vacuum degree 1 × 10 -4pa, evaporation rate thickness 240nm;
The making of inorganic barrier layer: inorganic barrier layer is made up of two kinds of materials, is HfN and CuAl, and wherein CuAl mass fraction is 10%, adopts magnetically controlled sputter method to make, base vacuum degree 1 × 10 -4pa, accelerating voltage 700V, magnetic field 150G, power density 35W/cm 2, thickness 120nm;
The making step of above encapsulated layer unit is implemented 2 times, prepared 2 encapsulated layer unit, obtain the encapsulated layer that formed by 2 encapsulated layer cells overlaps, finally make organic electroluminescence device.
Embodiment 5:
A kind of organic electroluminescence device, makes by following operating procedure:
(1), (2), (3) are with embodiment 1;
(4) prepare encapsulated layer in negative electrode outside:
An encapsulated layer unit, makes by the following method: vacuum evaporation is prepared first organic barrier layer, second organic barrier layer, mixed barrier layer, the 3rd organic barrier layer, the 4th organic barrier layer and inorganic barrier layer successively, particularly:
The making on first organic barrier layer: adopt the material of BCP as first organic barrier layer, vacuum degree 1 × 10 -4pa, evaporation rate thickness 260nm;
The making on second organic barrier layer: adopt the material of Balq as second organic barrier layer, vacuum degree 1 × 10 -4pa, evaporation rate thickness 200nm;
Mix the making on barrier layer: mixing barrier layer and be made up of three kinds of materials, is NiO, CaF 2and MnPc, wherein NiO mass fraction is that 20%, MnPc mass fraction is 18%, evaporation condition is vacuum degree 5 × 10 -5pa, evaporation rate thickness 150nm;
The making on the 3rd organic barrier layer: adopt the material of BCP as first organic barrier layer, vacuum degree 1 × 10 -4pa, evaporation rate thickness 260nm;
The making on the 4th organic barrier layer: adopt the material of Balq as second organic barrier layer, vacuum degree 1 × 10 -4pa, evaporation rate thickness 200nm;
The making of inorganic barrier layer: inorganic barrier layer is made up of two kinds of materials, is TaN and CuNi, and wherein CuNi mass fraction is 15%, adopts magnetically controlled sputter method to make, base vacuum degree 1 × 10 -4pa, accelerating voltage 800V, magnetic field 200G, power density 40W/cm 2, thickness 100nm;
The making step of above encapsulated layer unit is implemented 2 times, prepared 2 encapsulated layer unit, obtain the encapsulated layer that formed by 2 encapsulated layer cells overlaps, finally make organic electroluminescence device.
Embodiment 6:
A kind of organic electroluminescence device, makes by following operating procedure:
(1), (2), (3) are with embodiment 1;
(4) prepare encapsulated layer in negative electrode outside:
An encapsulated layer unit, makes by the following method: vacuum evaporation is prepared first organic barrier layer, second organic barrier layer, mixed barrier layer, the 3rd organic barrier layer, the 4th organic barrier layer and inorganic barrier layer successively, particularly:
The making on first organic barrier layer: adopt the material of TPBi as first organic barrier layer, vacuum degree 1 × 10 -3pa, evaporation rate thickness 200nm;
The making on second organic barrier layer: adopt the material of TAZ as second organic barrier layer, vacuum degree 1 × 10 -3pa, evaporation rate thickness 220nm;
Mix the making on barrier layer: mixing barrier layer and be made up of three kinds of materials, is MnO 2, BaF 2and NiPc, wherein MnO 2mass fraction is that 20%, NiPc mass fraction is 13%, and evaporation condition is vacuum degree 1 × 10 -3pa, evaporation rate thickness 150nm;
The making on the 3rd organic barrier layer: adopt the material of TPBi as first organic barrier layer, vacuum degree 1 × 10 -3pa, evaporation rate thickness 200nm;
The making on the 4th organic barrier layer: adopt the material of TAZ as second organic barrier layer, vacuum degree 1 × 10 -3pa, evaporation rate thickness 220nm;
The making of inorganic barrier layer: inorganic barrier layer is made up of two kinds of materials, is TiN and AlZn, and wherein AlZn mass fraction is 10%, adopts magnetically controlled sputter method to make, base vacuum degree 1 × 10 -3pa, accelerating voltage 800V, magnetic field 200G, power density 40W/cm 2, thickness 120nm;
The making step of above encapsulated layer unit is implemented 2 times, prepared 2 encapsulated layer unit, obtain the encapsulated layer that formed by 2 encapsulated layer cells overlaps, finally make organic electroluminescence device.
Fig. 1 is the structural representation of the organic electroluminescence device of the present embodiment.As shown in Figure 1, the structure of this organic electroluminescence device comprises the anode conducting substrate 10 stacking gradually, light emitting functional layer 20(comprises hole injection layer 201, hole transmission layer 202, luminescent layer 203, electron transfer layer 204, electron injecting layer 205), negative electrode 30, first encapsulated layer unit 40(comprises first organic barrier layer 401, second organic barrier layer 402, mix barrier layer 403, the 3rd organic barrier layer 404, the 4th organic barrier layer 405, inorganic barrier layer 406), second encapsulated layer unit 50(comprises first organic barrier layer 501, second organic barrier layer 502, mix barrier layer 503, the 3rd organic barrier layer 504, the 4th organic barrier layer 505, inorganic barrier layer 506).
Effect embodiment
Adopt the vapor permeability (WVTR) of Ca film electrical testing system testing organic electroluminescence device, and test the life-span (T701000cd/m of organic electroluminescence device 2), from original intensity 1000cd/m 2decayed to for 70% required time.WVTR and the life-span of the organic electroluminescence device of the embodiment of the present invention 1～6 preparation are as shown in table 1.As can be seen from the table, WVTR all remains on 10 -4g/ (m 2day) order of magnitude, minimumly reaches 7.5 × 10 -4g/ (m 2day), can meet the real requirement of flexible OLED.The life time of organic electroluminescence device is the longest reaches 4100 hours.This explanation, the organic electroluminescence device of encapsulation layer structure that prepared by the present invention have can prevent outside water, the erosion of oxygen isoreactivity material to organic electroluminescence device effectively, has good sealing and longer useful life.
Vapor permeability and the life-span of table 1 embodiment 1～6 organic electroluminescence device
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments of doing within the spirit and principles in the present invention, be equal to and replace and improvement etc., within all should being included in protection scope of the present invention.

Claims (10)

1. an organic electroluminescence device, comprises the anode conducting substrate, light emitting functional layer, negative electrode and the encapsulated layer that stack gradually, it is characterized in that, described encapsulated layer is the composite construction being formed by encapsulated layer cells overlap; Described encapsulated layer unit comprises the first organic barrier layer, second organic barrier layer, mixing barrier layer, the 3rd organic barrier layer, the 4th organic barrier layer and the inorganic barrier layer that stack gradually;
The material on described first organic barrier layer and the 3rd organic barrier layer is all selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines, oxine aluminium, 4,4', 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine, 2,9-dimethyl-4,7-diphenyl-1, one in 10-phenanthroline and 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene; The material on described second organic barrier layer and the 4th organic barrier layer is all selected from 4,7-diphenyl-1,10-phenanthroline, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene, oxine aluminium, two (2-methyl-oxine-N1, O8)-(1,1'-biphenyl-4-hydroxyl) aluminium and 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1, the one in 2,4-triazole;
The material on described mixing barrier layer is the first composite material that metal oxide, metal fluoride and metallo phthalocyanine are mixed to form, described metal oxide is molybdenum trioxide, vanadic oxide, tungstic acid, cesium oxide, nickel oxide or manganese dioxide, and described metal fluoride is lithium fluoride, cerium fluoride, magnesium fluoride, aluminum fluoride, calcirm-fluoride or barium fluoride; The material of described inorganic barrier layer is a kind of the second composite material being mixed to form in a kind of and silicon nitride in Nitinol, silver-cadmium alloy, copper cadmium alloy, albronze, corronil, alumin(i)um zinc alloy, aluminium nitride, boron nitride, hafnium nitride, tantalum nitride, titanium nitride.
2. organic electroluminescence device as claimed in claim 1, is characterized in that, the described encapsulated layer being formed by encapsulated layer cells overlap comprises 2～4 encapsulated layer unit.
3. organic electroluminescence device as claimed in claim 1, is characterized in that, described metallo phthalocyanine is CuPc, Phthalocyanine Zinc, FePC, Cobalt Phthalocyanine, manganese phthalocyanine or Nickel Phthalocyanine.
4. organic electroluminescence device as claimed in claim 1, it is characterized in that, the mass fraction of described metal oxide in described the first composite material is 10%～30%, the mass fraction of described metallo phthalocyanine in described the first composite material is 10%～30%, and described Nitinol, silver-cadmium alloy, copper cadmium alloy, albronze, corronil or the alumin(i)um zinc alloy mass fraction in described the second composite material is 10%～30%.
5. organic electroluminescence device as claimed in claim 1, it is characterized in that, the thickness on described first organic barrier layer, second organic barrier layer, the 3rd organic barrier layer and the 4th organic barrier layer is 200nm～300nm, and the thickness of described mixing barrier layer and inorganic barrier layer is 100nm～200nm.
6. organic electroluminescence device as claimed in claim 1, is characterized in that, described light emitting functional layer comprises the hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and the electron injecting layer that stack gradually.
7. a preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:
Step 1, provide clean anode conducting substrate, and described anode conducting substrate is carried out to activation processing;
Step 2, prepare light emitting functional layer and negative electrode at described anode conducting substrate surface successively vacuum evaporation;
Step 3, prepare encapsulated layer at described cathode surface, method is as follows:
S1) prepare first organic barrier layer and second organic barrier layer at described cathode surface successively vacuum evaporation, evaporation condition is vacuum degree 1 × 10 -5pa～1 × 10 -3pa, evaporation rate
S2) mix barrier layer in described second organic barrier layer surface vacuum evaporation preparation, evaporation condition is vacuum degree 1 × 10 -5pa～1 × 10 -3pa, evaporation rate
S3) prepare the 3rd organic barrier layer and the 4th organic barrier layer at described mixing barrier layer surface successively vacuum evaporation, evaporation condition is vacuum degree 1 × 10 -5pa～1 × 10 -3pa, evaporation rate
S4) prepare inorganic barrier layer at described the 4th organic barrier layer surface magnetron sputtering, the condition of magnetron sputtering is vacuum degree 1 × 10 -5～1 × 10 -3pa, accelerating voltage 300～800V, magnetic field 50～200G, power density 1～40W/cm 2;
The material on described first organic barrier layer and the 3rd organic barrier layer is all selected from 1,1-bis-[4-[N, N '-bis-(p-tolyl) amino] phenyl] cyclohexane, N, N'-diphenyl-N, N'-bis-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines, oxine aluminium, 4,4', 4''-tri-(N-3-aminomethyl phenyl-N-phenyl amino) triphenylamine, 2,9-dimethyl-4,7-diphenyl-1, one in 10-phenanthroline and 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene; The material on described second organic barrier layer and the 4th organic barrier layer is all selected from 4,7-diphenyl-1,10-phenanthroline, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline, 1,3,5-tri-(1-phenyl-1H-benzimidazolyl-2 radicals-yl) benzene, oxine aluminium, two (2-methyl-oxine-N1, O8)-(1,1'-biphenyl-4-hydroxyl) aluminium and 3-(biphenyl-4-yl)-5-(4-tert-butyl-phenyl)-4-phenyl-4H-1, the one in 2,4-triazole;
The material on described mixing barrier layer is the first composite material that metal oxide, metal fluoride and metallo phthalocyanine are mixed to form, described metal oxide is molybdenum trioxide, vanadic oxide, tungstic acid, cesium oxide, nickel oxide or manganese dioxide, and described metal fluoride is lithium fluoride, cerium fluoride, magnesium fluoride, aluminum fluoride, calcirm-fluoride or barium fluoride; The material of described inorganic barrier layer is a kind of the second composite material being mixed to form in a kind of and silicon nitride in Nitinol, silver-cadmium alloy, copper cadmium alloy, albronze, corronil, alumin(i)um zinc alloy, aluminium nitride, boron nitride, hafnium nitride, tantalum nitride, titanium nitride;
After S1～S4 step completes, make an encapsulated layer unit;
Step 4, repeating step S1～S4, make the encapsulated layer with composite construction, finally obtains described organic electroluminescence device.
8. the preparation method of organic electroluminescence device as claimed in claim 7, is characterized in that, the described encapsulated layer being formed by encapsulated layer cells overlap comprises 2～4 encapsulated layer unit.
9. the preparation method of organic electroluminescence device as claimed in claim 7, is characterized in that, described metallo phthalocyanine is CuPc, Phthalocyanine Zinc, FePC, Cobalt Phthalocyanine, manganese phthalocyanine or Nickel Phthalocyanine.
10. the preparation method of organic electroluminescence device as claimed in claim 7, it is characterized in that, the mass fraction of described metal oxide in described the first composite material is 10%～30%, the mass fraction of described metallo phthalocyanine in described the first composite material is 10%～30%, and described Nitinol, silver-cadmium alloy, copper cadmium alloy, albronze, corronil or the alumin(i)um zinc alloy mass fraction in described the second composite material is 10%～30%.
CN201310101429.5A 2013-03-27 2013-03-27 Organic light-emitting diode and preparation method thereof Pending CN104078592A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310101429.5A CN104078592A (en) 2013-03-27 2013-03-27 Organic light-emitting diode and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310101429.5A CN104078592A (en) 2013-03-27 2013-03-27 Organic light-emitting diode and preparation method thereof

Publications (1)

Publication Number Publication Date
CN104078592A true CN104078592A (en) 2014-10-01

Family

ID=51599744

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310101429.5A Pending CN104078592A (en) 2013-03-27 2013-03-27 Organic light-emitting diode and preparation method thereof

Country Status (1)

Country Link
CN (1) CN104078592A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106057860A (en) * 2016-08-08 2016-10-26 深圳市华星光电技术有限公司 OLED display apparatus and manufacturing method thereof
CN110767839A (en) * 2019-10-10 2020-02-07 恩利克（浙江）智能装备有限公司 Packaging protection layer of flexible OLED lighting panel and manufacturing method thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1348609A (en) * 1999-04-28 2002-05-08 E·I·内穆尔杜邦公司 Flexible organic electronic device with improved resistance to oxygen and moisture degradation
CN1739199A (en) * 2002-12-18 2006-02-22 松下电器产业株式会社 Exposing apparatus and image forming apparatus using organic electroluminescence element
CN101027798A (en) * 2004-09-23 2007-08-29 3M创新有限公司 Protected polymeric film
US20070228382A1 (en) * 2002-06-11 2007-10-04 Shunpei Yamazaki Light emitting device and manufacturing method thereof
US20100155757A1 (en) * 2008-12-23 2010-06-24 Samsung Mobile Display Co., Ltd. Organic light emitting diode display
CN101853877A (en) * 2009-02-09 2010-10-06 三星移动显示器株式会社 Organic light emitting diode display

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1348609A (en) * 1999-04-28 2002-05-08 E·I·内穆尔杜邦公司 Flexible organic electronic device with improved resistance to oxygen and moisture degradation
US20070228382A1 (en) * 2002-06-11 2007-10-04 Shunpei Yamazaki Light emitting device and manufacturing method thereof
CN1739199A (en) * 2002-12-18 2006-02-22 松下电器产业株式会社 Exposing apparatus and image forming apparatus using organic electroluminescence element
CN101027798A (en) * 2004-09-23 2007-08-29 3M创新有限公司 Protected polymeric film
US20100155757A1 (en) * 2008-12-23 2010-06-24 Samsung Mobile Display Co., Ltd. Organic light emitting diode display
CN101853877A (en) * 2009-02-09 2010-10-06 三星移动显示器株式会社 Organic light emitting diode display

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106057860A (en) * 2016-08-08 2016-10-26 深圳市华星光电技术有限公司 OLED display apparatus and manufacturing method thereof
CN106057860B (en) * 2016-08-08 2019-07-02 深圳市华星光电技术有限公司 OLED display and preparation method thereof
CN110767839A (en) * 2019-10-10 2020-02-07 恩利克（浙江）智能装备有限公司 Packaging protection layer of flexible OLED lighting panel and manufacturing method thereof

Similar Documents

Publication Publication Date Title
CN103730589A (en) Top emission organic light-emitting device and manufacturing method thereof
CN104078592A (en) Organic light-emitting diode and preparation method thereof
CN104218156A (en) Organic light emission diode device and preparation method thereof
CN104218162A (en) Organic light emission diode device and preparation method thereof
CN104167502A (en) Organic light-emitting diode and preparation method thereof
CN105576141A (en) Organic electroluminescence device
CN104078584A (en) Organic electroluminescence device and preparation method thereof
CN103904244B (en) A kind of organic electroluminescence device and preparation method thereof
CN104078591A (en) Organic light-emitting diode and preparation method thereof
CN104183733A (en) Organic light emitting device and manufacturing method thereof
CN104078601B (en) Organic electroluminescence device and preparation method thereof
CN104124384A (en) Organic electroluminescent device and preparation method thereof
CN104078594A (en) Organic light-emitting device and fabrication method thereof
CN104518095A (en) Organic electroluminescent device and preparation method thereof
CN103904251B (en) A kind of organic electroluminescence device and preparation method
CN103904241B (en) Organic electroluminescence device and preparation method
CN103904235B (en) Organic electroluminescence device and preparation method thereof
CN104218168A (en) Organic light emission diode device and fabrication method thereof
CN104167504A (en) Organic light-emitting diode and preparation method thereof
CN104167506A (en) Organic light emitting device and preparation method thereof
CN103904231B (en) A kind of organic electroluminescence device and preparation method thereof
CN103904232A (en) Organic light-emitting device and preparation method
CN104167505A (en) Organic light emitting device and preparation method thereof
CN104103767A (en) Organic light-emitting display and preparation method thereof
CN104167499A (en) Organic light-emitting diode and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20141001