CN104078300A - Plasma processing cavity and base station thereof - Google Patents
Plasma processing cavity and base station thereof Download PDFInfo
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- CN104078300A CN104078300A CN201310105805.8A CN201310105805A CN104078300A CN 104078300 A CN104078300 A CN 104078300A CN 201310105805 A CN201310105805 A CN 201310105805A CN 104078300 A CN104078300 A CN 104078300A
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- base station
- gas path
- cooled gas
- substrate
- cooling passage
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Abstract
The invention provides a plasma processing cavity and a base station thereof. The base station comprises a static chuck, a substrate is clamped on the static chuck, and the lower portion of the static chuck further comprises a plurality of cooling liquid channels and a plurality of cooling gas channels, wherein the cooling gas channels are arranged below the cooling liquid channels. The plasma processing cavity and the base station can provide a uniform heat balance system, and guarantee temperature uniformity of the static chuck and the substrate.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of plasma treatment chamber and base station thereof.
Background technology
Plasma treatment chamber utilizes the operation principle of vacuum reaction chamber to carry out the processing of the substrate of semiconductor chip and plasma flat-plate.The operation principle of vacuum reaction chamber is in vacuum reaction chamber, to pass into the reacting gas that contains suitable etching agent source gas, and then this vacuum reaction chamber is carried out to radio-frequency (RF) energy input, with activated reactive gas, excite and maintain plasma, so that respectively the material layer on etching substrate surface or on substrate surface depositing layer of material, and then semiconductor chip and plasma flat-plate are processed.
Described plasma process chamber comprises a cavity, and cavity bottom is provided with a base station, is placed with substrate on base station.In base station, be disposed with heater and some cooling passages, wherein, heater is arranged among the base station that is close in substrate, and for substrate is heated, cooling passage is arranged at described heater below, for substrate is carried out cooling.Heater and some cooling passages have formed the humidity control system of substrate and base station jointly.
But, in the prior art, conventionally between heater and cooling passage, be also provided with cooled gas path.In cooled gas path, pass into helium, substrate is lowered the temperature or de-clamping etc.Between heater and cooling passage, have uniform medium, once still will cause the heterogeneity of medium in centre embedding cooled gas path, its temperature that can affect further substrate regulates homogeneity, even causes the heterogeneity of substrate processing procedure.
Therefore, the setting of base station and chamber all should address the aforementioned drawbacks.
Summary of the invention
For the problems referred to above in background technology, the present invention proposes a kind of plasma treatment chamber and base station thereof.
First aspect present invention provides a kind of base station for plasma treatment chamber, wherein, described base station comprises an electrostatic chuck, substrate is held on described electrostatic chuck, described electrostatic chuck below also comprises some cooling passages and cooled gas path, and described cooled gas path is arranged at the below of described cooling passage.
Further, the span of the distance of the described cooling passage of described cooled gas path distance is for being greater than 1mm.
Further, the span of the cross-sectional area of described cooled gas path is greater than 1mm
2.
Further, described cooled gas path is a circular passage, and it is also connected with gas supply device, also comprises a control device in gas supply device front.
Further, described control device comprises a valve, and it controls the air feed of gas supply device by switch.
What in described cooled gas path, pass into further, is helium.
Further, the shape of cross section of described cooled gas path comprises circle, polygon, ellipse, trapezoidal, triangle.
Further, described cooling passage is also connected with a coolant circulation unit, for cooling liquid being provided to described cooling passage and reclaiming cooling fluid from this cooling passage.
Further, described cooling passage apart from the span of the distance of substrate for being greater than 5mm.
Second aspect present invention provides a kind of plasma treatment chamber, it is characterized in that, described plasma treatment chamber comprises the base station described in first aspect present invention.
The present invention can provide the heat balance system of homogeneous, ensures the temperature uniformity of electrostatic chuck and substrate.
Brief description of the drawings
Fig. 1 is the structural representation of the plasma treatment chamber base station of prior art;
Fig. 2 is the structural representation of the plasma treatment chamber base station of a specific embodiment of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
Fig. 1 is the structural representation of the plasma treatment chamber base station of prior art.As shown in Figure 1, described plasma process chamber comprises a cavity (not shown), and cavity bottom is provided with a base station 100, is provided with electrostatic chuck in base station, and its electrostatic attraction producing by electrostatic attraction electrode 102 clamps the substrate W being placed on base station 100.In base station 100, be disposed with heater 104 and some cooling passages 108, wherein, heater 104 is arranged among the base station 100 that is close in substrate W, for substrate W is heated, cooling passage 108 is arranged at described heater 104 belows, for substrate W is carried out cooling.Heater 104 and some cooling passages 108 have formed the humidity control system of substrate W and base station 100 jointly.
In the prior art, conventionally between heater 104 and cooling passage 108, be also provided with cooled gas path 106.In refrigerating gas 106 passages, pass into refrigerating gas, substrate W is lowered the temperature or de-clamping etc.Base station 100 is made up of insulating material, therefore between heater 104 and cooling passage 108, originally has uniform medium, once still will cause the heterogeneity of medium in centre embedding cooled gas path 106.And substrate W has certain area, as shown in Figure 1, the fringe region of substrate W is following owing to there being cooled gas path 106, its corresponding humidity control system certainly from the fringe region of substrate W with exterior domain ambient condition different, have inhomogeneity between the two, therefore the temperature regulating degree of substrate W is also different thus.Therefore, the temperature heterogeneity of substrate W, also can cause the heterogeneity of substrate processing procedure.
Fig. 2 is the structural representation of the plasma treatment chamber base station of a specific embodiment of the present invention, as shown in Figure 2, the invention provides a kind of base station 200 for plasma treatment chamber, wherein, described base station 200 comprises an electrostatic chuck, substrate W is held on described electrostatic chuck, and described electrostatic chuck below also comprises some cooling passages 206 and cooled gas path 208.Wherein, described cooled gas path 208 is arranged at the below of described cooling passage 206.
Further, the span of the distance of the described cooling passage 206 of described cooled gas path 208 distance is for being greater than 1mm.
Further, the span of the cross-sectional area of described cooled gas path 208 is for being greater than 1mm
2.
Further, described cooled gas path 208 is a circular passage, and it is also connected with gas supply device (not shown).Described gas supply device is for supplying refrigerating gas toward cooled gas path 208.Further, also comprise a control device in gas supply device front.Typically, described control device comprises a valve (not shown), and it controls the air feed of gas supply device 204 by switch.
What typically, in described cooled gas path 208, pass into is helium.
Alternatively, the shape of cross section of described cooled gas path 208 comprises circle, polygon, ellipse, trapezoidal, triangle.Be not considered as limitation of the present invention herein, and be only the declaration of will of example, the cross section of cooled gas path 208 can be any figure.
Further, described cooling passage 206 is also connected with a coolant circulation unit (not shown), for cooling liquid being provided and reclaiming cooling fluid from this cooling passage to described cooling passage 206.
Further, described cooling passage 206 apart from the span of the distance of substrate W for being greater than 5mm.
Second aspect present invention also provides a kind of plasma treatment chamber, and wherein, described plasma treatment chamber comprises previously described base station 200.
Therefore, in plasma treatment chamber, be passed to cooling passage 206 from plasma, the base station heater 204 of process zone (being positioned at base station top) or the heat that both brought in the lump from basal disc, thereby set up heat balance, it can maintain electrostatic chuck in a specified temp.Heat pipeline has determined that how many temperature can be crossed and has been established.For an electrostatic chuck that need to reach at short notice temperature uniformity, the corresponding hot pipeline in its each region needs to be consistent, to ensure heat conducting consistency.The present invention can keep heat conducting consistency.
Suppose temperature to be increased to T from cooling passage to electrostatic chuck top, T=q/G, wherein, q is the power density in unit are, G is the coefficient of heat conduction from cooling passage 206 to electrostatic chuck top.Referring to Fig. 1, regard base station corresponding substrate edge region as first area, regard other regions of base station as second area, owing to being also provided with cooled gas path 106 between the substrate W of the plasma treatment chamber of prior art and cooling passage 108, the heat conduction path of first area has been subject to impact, therefore the coefficient of heat conduction G1 of first area is less than the coefficient of heat conduction G2 of second area, and therefore T1 must be greater than T2, can affect thus the even temperature uniformity of substrate W of electrostatic chuck.
But in the present invention, because cooled gas path 208 is moved to cooling liquid passage 206, it has been transferred to outside heat conduction path/system, it is not seen you again and has influence on the temperature uniformity of electrostatic chuck.All heat conduction path in electrostatic chuck all have same coefficient of heat conduction G2, and it can set up the heat balance system of homogeneous, also can not have influence on the homogeneity of substrate processing procedure again.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.Read after foregoing those skilled in the art, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. the base station for plasma treatment chamber, wherein, described base station comprises an electrostatic chuck, substrate is held on described electrostatic chuck, described electrostatic chuck below also comprises some cooling passages and cooled gas path, it is characterized in that: described cooled gas path is arranged at the below of described cooling passage.
2. base station according to claim 1, is characterized in that, the span of the distance of the described cooling passage of described cooled gas path distance is for being greater than 1mm.
3. base station according to claim 1, is characterized in that, the span of the cross-sectional area of described cooled gas path is for being greater than 1mm
2.
4. base station according to claim 1, is characterized in that, described cooled gas path is a circular passage, and it is also connected with gas supply device, also comprises a control device in gas supply device front.
5. base station according to claim 4, is characterized in that, described control device comprises a valve, and it controls the air feed of gas supply device by switch.
6. base station according to claim 1, is characterized in that, what in described cooled gas path, pass into is helium.
7. base station according to claim 1, is characterized in that, the shape of cross section of described cooled gas path comprises circle, polygon, ellipse, trapezoidal, triangle.
8. base station according to claim 1, is characterized in that, described cooling passage is also connected with a coolant circulation unit, for cooling liquid being provided to described cooling passage and reclaiming cooling fluid from this cooling passage.
9. base station according to claim 1, is characterized in that, described cooling passage apart from the span of the distance of substrate for being greater than 5mm.
10. a plasma treatment chamber, is characterized in that, described plasma treatment chamber comprises the base station described in claim 1 to 9 any one.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310105805.8A CN104078300A (en) | 2013-03-28 | 2013-03-28 | Plasma processing cavity and base station thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310105805.8A CN104078300A (en) | 2013-03-28 | 2013-03-28 | Plasma processing cavity and base station thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104078300A true CN104078300A (en) | 2014-10-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310105805.8A Pending CN104078300A (en) | 2013-03-28 | 2013-03-28 | Plasma processing cavity and base station thereof |
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| CN (1) | CN104078300A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107530775A (en) * | 2015-04-21 | 2018-01-02 | 瓦里安半导体设备公司 | Semiconductor- fabricating device with interior inlay fluid conduit |
| CN113130279A (en) * | 2019-12-30 | 2021-07-16 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, plasma processing device and working method thereof |
-
2013
- 2013-03-28 CN CN201310105805.8A patent/CN104078300A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107530775A (en) * | 2015-04-21 | 2018-01-02 | 瓦里安半导体设备公司 | Semiconductor- fabricating device with interior inlay fluid conduit |
| US10486232B2 (en) | 2015-04-21 | 2019-11-26 | Varian Semiconductor Equipment Associates, Inc. | Semiconductor manufacturing device with embedded fluid conduits |
| CN107530775B (en) * | 2015-04-21 | 2020-06-16 | 瓦里安半导体设备公司 | Semiconductor manufacturing apparatus with embedded fluid conduit and method of forming the conduit |
| CN113130279A (en) * | 2019-12-30 | 2021-07-16 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, plasma processing device and working method thereof |
| CN113130279B (en) * | 2019-12-30 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | Lower electrode assembly, plasma processing device and working method thereof |
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Application publication date: 20141001 |