CN104073769A - Film forming method - Google Patents

Film forming method Download PDF

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Publication number
CN104073769A
CN104073769A CN201410122615.1A CN201410122615A CN104073769A CN 104073769 A CN104073769 A CN 104073769A CN 201410122615 A CN201410122615 A CN 201410122615A CN 104073769 A CN104073769 A CN 104073769A
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CN
China
Prior art keywords
film
processing space
space
oxygen
sputtering
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CN201410122615.1A
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Chinese (zh)
Inventor
山本悟史
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Dainippon Screen Manufacturing Co Ltd
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Dainippon Screen Manufacturing Co Ltd
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Publication date
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Publication of CN104073769A publication Critical patent/CN104073769A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0042—Controlling partial pressure or flow rate of reactive or inert gases with feedback of measurements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention provides a film forming method in which technology for forming a film with excellent characteristic in a quick enough speed. First plasma is generated in a processing space through applying a sputtering voltage on an aluminum target, and furthermore inductance coupling type second plasma is generated in the processing space through making high-frequency current flow to an inductance coupling antenna with less than one circles; and simultaneously, sputtering gas and oxygen are supplied into the processing space for performing sputtering on the aluminum target, thereby forming an aluminum oxide film on an object (9) through reactive sputtering. At least first plasma is generated in the processing space, and simultaneously sputtering gas is supplied to the processing space for performing sputtering on the aluminum target, thereby forming the aluminum film on the object (9). The object (9) on which one film selected from the aluminum oxide film and the aluminum film is formed is not exposed in atmosphere, and furthermore the other film is formed through laminating on one film formed on the object (9).

Description

Film formation method
Technical field
The present invention relates to the technology for form film on object.
Background technology
There are at present the various technology that form film on plated film object.For example in patent documentation 1, record and utilized ALD method (atomic layer deposition method) on the back side of p-type silicon substrate, to form aluminum oxide (Al 2o 3) the technology of film (passive film).
Patent documentation 1: TOHKEMY 2012-39088 communique
Patent documentation 2: TOHKEMY 2011-176283 communique
Patent documentation 3: No. 4005912 communiques of Japanese Patent
Due to electrical specification, the sealing excellent of pellumina, be therefore for example expected to the passivating back film of the p-type silicon substrate that becomes solar cell.But the film forming speed of ALD method is extremely slow, be therefore unsuitable for producing in batches by the method for ALD method generation pellumina.
Summary of the invention
The present invention proposes in view of the above problems, and its object is to provide the technology that can form with enough speed the film of excellent specific property.
The film formation method of first method, on object, form film by magnetron sputtering, comprise: operation a), on one side by applying sputtering voltage to aluminium target, in processing space, produce the first plasma, and flow by the inductive coupling antenna that makes high-frequency current be less than a circle to the number of turns, in described processing space, produce the second plasma of inductive coupling, supply with sputter gas and oxygen on one side to described processing space aluminium target is carried out to sputter, thereby on described object, form pellumina by reactive sputtering, operation b), carry out described operation a) before or described operation a) carry out afterwards, this operation b) in, in processing space, at least produce described the first plasma on one side, supply with sputter gas on one side to described processing space aluminium target is carried out to sputter, thereby on described object, form aluminium film, the described object that is formed with a kind of film in described pellumina and described aluminium film is not exposed in atmosphere, the another kind of film of stratification on the described a kind of film being formed on this object.
The film formation method of second method, in the film formation method of first method, in described operation a) afterwards, carries out described operation b).
The film formation method of Third Way, in the film formation method of second method, described operation a) comprising: operation a1), on one side to the oxygen of processing space supply sputter gas and the first amount, carry out described reactive sputtering on one side, operation a2), one side is supplied with sputter gas to processing space and is less than the oxygen of the second amount of described the first amount, carries out described reactive sputtering on one side; At described operation a1) carry out afterwards described operation a2).
The film formation method of cubic formula, in film formation method described in either type in first to the 3rd, comprise operation c), be divided into multiple processing space in internal space and dispose respectively in the chamber of sputtering source in described multiple processing space, carrying described object along the orientation in described multiple processing space; Described operation a) b) is carried out in different processing spaces with described operation.
The film formation method of the 5th mode, in the film formation method of cubic formula, described a) operation comprises: operation a1), on one side to the oxygen of processing space supply sputter gas and the first amount, carry out described reactive sputtering on one side, operation a2), one side is supplied with sputter gas to processing space and is less than the oxygen of the second amount of described the first amount, carries out described reactive sputtering on one side; Described operation a) b) is carried out in different processing spaces with described operation.
The film formation method of the 6th mode, in film formation method described in either type in first to the 3rd, comprise: operation d), form one processes space and disposes in the chamber of a sputtering source in described processing space in internal space, by described object remain on described sputtering source position in opposite directions on, operation e), changes the amount of the oxygen of supplying with to described processing space; Supplying, under the state of oxygen supply, to carry out described operation a) to described processing space; Stopping, under the described processing space confession state of oxygen supply, carrying out described operation b).
The film formation method of the 7th mode, in the film formation method described in the either type in first to the 6th, described object is silicon substrate.
According to first method, can form the film of the stepped construction with pellumina and aluminium film.At this, form pellumina by reactive sputtering, therefore can form pellumina with enough fast speed.In addition, on the surface of the film forming by sputter, have the concavo-convex of microcosmic, but at this, the another kind of film of stratification, therefore can make two films be close together securely by fixed effect on the film forming by sputter.In addition, at this, the object that is formed with a kind of film is not exposed in atmosphere, and on the film being formed on this object, the another kind of film of stratification, is therefore difficult to the Adsorption on Surface impurity at the initial film forming.Therefore, be difficult to produce initial formation film and and the film of this film-stack between close property situation about destroying because of impurity etc., can make two films be close to well.Like this, according to first method, can form with enough fast speed the film of excellent specific property.
According to second method, on pellumina, form aluminium film.The surperficial specific activity that has just formed the pellumina after film is higher, therefore especially easily adsorbs impurity, but in the film here obtaining, and does not expose and state in being covered by aluminium film on the surface of pellumina.Therefore, can obtain being difficult to adsorb from the teeth outwards the film of impurity.
According to Third Way, supplying with under the state of more a small amount of oxygen to processing space, form the top section of pellumina, on this, form aluminium film.According to this structure, especially can improve the close property between pellumina and aluminium film.
According to the 4th, the 5th mode, by carry object in the chamber that is divided into multiple processing space, this object is carried out to series of processes.According to this structure, compared with multiple film forming being processed to the situation that chamber is set respectively, can make the size of chamber little, and can improve processing efficiency.
According to the 6th mode, change to processing the amount of oxygen of supplying with in space by making, can on object, form the film with the stepped construction that the membrane structure of pellumina and aluminium film little by little changes.According to this structure, can make apparatus structure simple.
According to the 7th mode, can form electrical specification excellence and the also passive film of excellence of sealing characteristic with enough fast speed.
Brief description of the drawings
Fig. 1 is the schematic diagram that the schematic configuration of film deposition system is shown.
Fig. 2 is the schematic diagram that the schematic configuration of film unit is shown into.
Fig. 3 is the schematic diagram that the schematic configuration of sputtering source is shown.
Fig. 4 is the figure that is illustrated in into the flow process of the processing of carrying out in film unit.
Fig. 5 is the figure that the flow process of the processing that substrate is carried out is shown.
Fig. 6 is the figure that is shown schematically in into the film forming in film unit.
Fig. 7 is the schematic diagram that the schematic configuration of the one-tenth film unit of variation is shown.
Fig. 8 is the figure that is illustrated in the flow process of the processing of carrying out in the one-tenth film unit of variation.
Wherein, description of reference numerals is as follows:
1,1s: become film unit
10,10a, 10b, 10c, 10d, 10s: sputtering source
11: foundation plate
12: sputter power supply
13: magnet
14; Anode
15: inductive coupling plasma generating unit
151: inductive coupling antenna
153: high frequency electric source
16: ejiction opening
20: masking shield
30: throttle plate
40: well heater
50,50s: gas supply part
51: argon supply unit
52: oxygen supply portion
8: target
9: substrate
90: conveyance
100: film deposition system
130: film forming chamber
170: high-vacuum exhaust system
180: trucking department
Va, Vb, Vc, Vd, Vs: process space
Embodiment
Below, on one side with reference to accompanying drawing, describe for embodiment on one side.In addition, embodiment is below the example that the present invention is specialized, instead of for limiting the example of protection scope of the present invention.In addition, for easy understanding, in the accompanying drawings, sometimes the size of each several part, quantity are exaggerated or simplified and represent.In addition, in a part of accompanying drawing, mark XYZ orthogonal axis for direction.Z-direction in this coordinate axis represents the direction of plummet, and XY plane is horizontal plane.
< 1. one-piece construction >
With reference to Fig. 1, describe for the one-piece construction of film deposition system 100 on one side on one side.Fig. 1 is the figure of the schematic configuration of schematically illustrated film deposition system 100.In addition, in Fig. 2, Fig. 7 of Fig. 1 and reference below, by the sidewall perspective chamber interior of chamber.
In film deposition system 100, establishing plated film object is substrate (specifically, being for example the p-type silicon substrate of solar cell) 9.At this, the state on the upper surface as the substrate 9 of plated film object in being disposed in tabular conveyance 90.; for example multiple substrates 9 with the object face that will form film (at this; the back side (face of a side contrary with light entrance face one side) of substrate 9) be configured on conveyance 90 with rectangular towards the state of a side contrary with conveyance 90 1 sides, and described multiple substrate 9 is fixed on (with reference to Fig. 2) on conveyance 90.
In film deposition system 100, for example at a pair of locking chamber (specifically, material loading locking chamber 110 and discharging locking chamber 150) between be wire and be connected with multiple treatment chamber (specifically, heated chamber 120, film forming chamber 130 and cooling chamber 140).
Material loading locking chamber 110 and discharging locking chamber 150 are the chambers that form material loading locking chamber, in order to remain vacuum (in treatment chamber 120,130,140, not to atmosphere opening), described material loading locking chamber 110 and discharging locking chamber 150 are set.Material loading locking chamber 110 is configured for moving into heated chamber 120 the material loading locking chamber of untreated substrate 9, and discharging locking chamber 150 is configured for taking out of from cooling chamber 140 the material loading locking chamber of processed substrate 9.
The internal space of heated chamber 120 is formed for the processing space that substrate 9 is heated.That is, in the inside of heated chamber 120, dispose respectively well heater 121 at upside and the downside of aftermentioned carrying path L, this well heater 121 is to heating at the substrate 9 of heated chamber 120 interior carryings.
Film forming chamber 130 and the each member that is configured in the inside of film forming chamber 130 are configured for forming the one-tenth film unit 1 of film on substrate 9.For becoming film unit 1, be described more specifically in the back.
The internal space of cooling chamber 140 is formed for substrate 9 to carry out cooling processing space.That is, in the inside of cooling chamber 140, dispose respectively cooling plate 141 at upside and the downside of aftermentioned carrying path L, this cooling plate 141 carries out cooling to the substrate 9 in cooling chamber's 140 interior carryings.
Between the two ends of each locking chamber 110,150 and each treatment chamber 120,130,140, dispose door 160.Door 160 can and the state (open mode) that is connected with this 160 adjacent chamber and is connected switching between the state (closing condition) that makes this adjacent chamber airtight for cutting off.
In addition, on each chamber 110,120,130,140,150, be connected with respectively high-vacuum exhaust system 170, this high-vacuum exhaust system 170 can reduce pressure to make above-mentioned internal space in vacuum state to the internal space of each chamber 110,120,130,140,150.
Have in one group of chamber, 110,120,130,140,150 interior regulations the carrying path L that runs through in each chamber 110,120,130,140,150 level along their closure.Along this carrying path L carrying conveyance 90(film deposition system 100 has, and is equipped with the conveyance 90 of multiple substrates 9) trucking department 180.Specifically, trucking department 180 for example comprises: a pair of carrying roller 181, in the inside of each chamber 110,120,130,140,150, configures across carrying path L in opposite directions in the horizontal direction perpendicular with carrying path L (being Y-direction in illustrated example); Driving part (omitting diagram), it drives described a pair of carrying roller 181 to make a pair of carrying roller 181 synchronous rotaries.Bearing of trend (being directions X in illustrated example) along carrying path L is provided with multipair carrying roller 181.In this structure, by near the rotation on one side of ora terminalis (ora terminalis of ± Y side) that makes each carrying roller 181 be connected to conveyance 90 on one side from below, the direction (in illustrated example being+directions X) (arrow A R180) along carrying path L to regulation is carried conveyance 90.
In film deposition system 100, the upstream side (X side) the carrying direction of conveyance 90 disposes material loading locking chamber 110, heated chamber 120, film forming chamber 130, cooling chamber 140 and discharging locking chamber 150 successively.And the substrate 9 being configured on conveyance 90 passes through in each chamber according to above-mentioned configuration sequence on one side, the processing specifying in each chamber on one side.That is, move into the substrate 9 of film deposition system 100 by material loading locking chamber 110 and first moved into heated chamber 120, carry out heat treated at this heated chamber 120.Then, carry out heat treated substrate 9 afterwards and moved into film forming chamber 130, carry out film forming processing at this film forming chamber 130.Then, carry out film forming processing substrate 9 afterwards and moved into cooling chamber 140, carry out cooling process in this cooling chamber 140.Take out of from film deposition system 100 substrate 9 carrying out after cooling process by discharging locking chamber 150.But, needn't necessarily carry out heat treated and cooling process, also can omit above-mentioned heat treated and cold going processed according to operation design is different.
Film deposition system 100 also has control part 190, and each structural member that this control part 190 has with film deposition system 100 is electrically connected, and controls each structural member.Specifically, control part 190 is for example by the CPU(central processing unit for carrying out various calculation process), for the ROM(read-only storage of storage program etc.), become the RAM(random access memory of the work area of calculation process), for the hard disk of storage program or various data files etc., there is the local area network by LAN() etc. the general computer that is connected to each other by bus etc. of the data communication section etc. of the data communication function that carries out form.In addition, control part 190 is connected with the input part being made up of indicating meter, keyboard and the mouse etc. that carry out various demonstrations etc.In film deposition system 100, the processing under the control of control part 190, substrate 9 being specified.
2. one-tenth film units of <, 1 >
< 2-1. one-piece construction >
With reference to Fig. 2, describe for the one-piece construction that becomes film unit 1 on one side on one side.Fig. 2 is the integrally-built schematic diagram that film unit 1 is shown into.
Becoming film unit 1 is the processing unit that forms film by magnetron sputtering (magnetron sputtering) on the substrate 9 as object.Specifically, become film unit 1 to have: film forming chamber 130; The sputtering source 10 of multiple (being 4 in illustrated example), it is configured in the inside of film forming chamber 130.Multiple sputtering sources 10 along with the carrying path L(of conveyance 90 with reference to Fig. 1) parallel axle (X-axis) forms a line.Below, in the situation that distinguishing multiple sputtering source 10, the upstream side (X side) the carrying direction of conveyance 90 is called " the first sputtering source 10a ", " the second sputtering source 10b ", " the 3rd sputtering source 10c ", " the 4th sputtering source 10d " successively.
Become film unit 1 also to there is the masking shield 20 of the both sides that are configured in each sputtering source 10.The function of the Abschirmblech that masking shield 20 performance limits for the scope of splashing of plasma that sputtering source 10 is produced and sputter.Below, the space also masking shield of the both sides by the first sputtering source 10a 20 being separated is called " first processes SPACE V a ".In addition, the space also masking shield of the both sides by the second sputtering source 10b 20 being separated is called " second processes SPACE V b ".In addition, the space also masking shield of the both sides by the 3rd sputtering source 10c 20 being separated is called " the 3rd processes SPACE V c ".In addition, the space also masking shield of the both sides by the 4th sputtering source 10d 20 being separated is called " the 4th processes SPACE V d ".
, the internal space of film forming chamber 130 is divided into multiple (in this case 4) by multiple masking shields 20 and processes SPACE V a, Vb, Vc, Vd, disposes respectively a sputtering source 10 at the plurality of processing SPACE V a, Vb, Vc, Vd.
Become film unit 1 also to have and be configured in the 3rd throttle plate 30 of processing between SPACE V c and the 4th processing SPACE V d.As mentioned above, become film unit 1 there is the high-vacuum exhaust system 170 for being reduced pressure in the internal space of film forming chamber 130, high-vacuum exhaust system 170 be disposed at this throttle plate 30-X side (, the upstream side in the carrying direction of conveyance 90).Throttle plate 30 is processed the conductivity of the Exhaust Gas between SPACE V d for adjusting high-vacuum exhaust system 170 and the 4th.In addition, throttle plate 30 is also brought into play for making the first processing SPACE V a, second process SPACE V b and the 3rd and is processed environmental gas in SPACE V c and be difficult to flow into the 4th effect of processing the impedance (barrier walls) of SPACE V d.
In addition, become film unit 1 to have for to the well heater 40 heating at the substrate 9 of film forming chamber 130 interior carryings.Well heater 40 is for example disposed at the upside of carrying path L.
In addition, become film unit 1 to have for processing SPACE V a, Vb, Vc, the Vd gas supply part 50 of supply gas respectively to 4.Specifically, gas supply part 50 has: argon supply unit 51, it (, first is processed SPACE V a, second and processes SPACE V b, the 3rd and process SPACE V c and the 4th and process SPACE V and d) supply with respectively sputter gas (at this, for example, being argon (Ar) gas) to all processing space; Oxygen supply portion 52, its to 3 of the upstream side (X side) in the carrying direction of conveyance 90 process spaces (, first process SPACE V a, second process SPACE V b and the 3rd process SPACE V c) respectively supply response gas (at this, be oxygen (O 2) gas).
Specifically, argon supply unit 51 for example has argon supply source 511, the argon supplying tubing 512 as the supply source of argon.One end of argon supplying tubing 512 is connected with argon supply source 511, the other end branches into 4 strands, each branch end is connected to the ejiction opening (the ejiction opening 16(that specifically, distinguishes corresponding setting with each sputtering source 10a, 10b, 10c, 10d is with reference to Fig. 3) being communicated with 4 processing SPACE V a, Vb, Vc, Vd).In addition, in the way, 4 paths of the front end after argon supplying tubing 512 branches, be respectively arranged with supply valve 513a, 513b, 513c, 513d.The first supply valve 513a adjusts the amount of the argon of supplying with to the first processing SPACE V a under the control of control part 190, the second supply valve 513b adjusts the amount of the argon of supplying with to the second processing SPACE V b under the control of control part 190, the 3rd supply valve 513c adjusts the amount of the argon of supplying with to the 3rd processing SPACE V c under the control of control part 190, and the 4th supply valve 513d adjusts the amount of the argon of supplying with to the 4th processing SPACE V d under the control of control part 190.Preferred each supply valve 513a, 513b, 513c, 513d are the valve that can automatically be adjusted at the flow of gas mobile in pipe arrangement, specifically, for example, preferably include mass flow controller (mass flow controller).
Specifically, oxygen supply portion 52 for example has oxygen supply source 521, the oxygen supply pipe arrangement 522 as the supply source of oxygen.One end of oxygen supply pipe arrangement 522 is connected with oxygen supply source 521, the other end branches into 3 strands, each branch end is connected to the ejiction opening (the ejiction opening 16(that specifically, distinguishes corresponding setting with the first sputtering source 10a, the second sputtering source 10b and the 3rd sputtering source 10c is with reference to Fig. 3) being communicated with respectively with 3 processing SPACE V a, Vb, Vc carrying the upstream side in direction).In addition, in way, 3 of the front end after the branch of oxygen supply pipe arrangement 522 paths, be respectively arranged with supply valve 523a, 523b, 523c.The first supply valve 523a adjusts the amount of the oxygen of supplying with to the first processing SPACE V a under the control of control part 190, the second supply valve 523b adjusts the amount of the oxygen of supplying with to the second processing SPACE V b under the control of control part 190, and the 3rd supply valve 523c adjusts the amount of the oxygen of supplying with to the 3rd processing SPACE V c under the control of control part 190.Preferred each supply valve 523a, 523b, 523c are the valve that can automatically be adjusted at the flow of gas mobile in pipe arrangement, specifically, for example, preferably include mass flow controller etc.
< 2-2. sputtering source 10 >
Then,, on one side with reference to Fig. 3, describe for sputtering source 10 on one side.Fig. 3 is the figure of the structure of schematically illustrated sputtering source 10.In addition 4 sputtering sources 10 that, become film unit 1 to have all have identical structure.
Sputtering source 10 is that controlled sputtering source and plasma source combine.Specifically, sputtering source 10 has target 8, foundation plate (negative electrode) 11, power supply 12, magnet 13 for sputter, anode 14, inductive coupling plasma generating unit 15.In addition, in addition, sputtering source 10 also has for the inductive coupling antenna 151 to target 8, foundation plate 11, inductive coupling plasma generating unit 15 etc. and carries out cooling mechanism etc. (omitting diagram).
At this, as target 8, utilize the aluminium target being formed by aluminium (monometallic aluminium) material.By target maintaining part (omit diagram), target 8 is remained to flat-hand position, this target 8 be positioned at the carrying path L of conveyance 90 separate the distance of regulation and with the carrying path L of conveyance 90 position in opposite directions on., target 8 and substrate 9(, are disposed in the substrate 9 on the conveyance 90 being handled upside down along carrying path) configure in opposite directions in the mode that separates the distance of regulation under the parallel state of the posture each other.Wherein, target 8 remains in film forming chamber 130 with the state insulating with film forming chamber 130.
Foundation plate 11 connects from below and the target 8 of target 8.In addition, sputter applies sputtering voltage with power supply 12 to foundation plate 11.At this, sputtering voltage can be for example the volts DS of negative voltage, can be the pulse-like voltage being formed by negative voltage and positive voltage, can also be the interchange sputtering voltage that is added with negative bias voltage composition.By to foundation plate 11(and then, target 8) apply sputtering voltage and generate electric field, produce plasma (the first plasma) by this electric field.
Magnet 13 is disposed at the below of foundation plate 11.Magnet 13 is the magnet that magnetron sputtering is used, and foundation plate 11 and magnet 13 are called to " magnetron cathode " in the lump.Magnet 13 is for example formed by permanent magnet, forms static magnetic field (magnetic control magnetic field) at the near surface of target 8.By forming this static magnetic field, the near surface by the plasma constraint producing by electric field at target 8.
In addition,, at this, because aftermentioned inductive coupling plasma generating unit 15 is supported by magnetron cathode and produced isoionic action, the maximum value of the horizontal flux density that therefore magnet 13 forms on the surface of target 8 is as long as be 20mT～50mT(milli tesla).In the case of not having the support of inductive coupling plasma generating unit 15 (plasma is auxiliary), on the surface of target 8, need the horizontal flux density of 60mT～100mT left and right, auxiliary by carrying out plasma, can generate enough plasmas with lower magnetic flux density.
Anode 14 and foundation plate 11 (, with the non-contacting state of foundation plate 11) spaced apart are disposed at the side of foundation plate 11.The upper direction of anode 14 bends and becomes end near the direction of target 8, and the side of this end and target 8 approaches with contactless state.
Inductive coupling plasma generating unit 15 is supported (assisting) magnetron cathode and is produced isoionic action.Specifically, inductive coupling plasma generating unit 15 has two inductive coupling antennas 151 as inductive coupling high frequency antenna.Specifically, each inductive coupling antenna 151 bends to tubular shape conductor processed metal U-shaped and covers the dielectric mediums such as quartz and forms.
Two inductive coupling antennas 151 configure across target 8.Specifically, each inductive coupling antenna 151 configures along this side in the case of not coming in contact with the side of target 8.In addition, adjust the relation of the height location between inductive coupling antenna 151 and target 8, so that the end of the outstanding side of each inductive coupling antenna 151 neighbouring (preferably, than the position of (several centimetres of left and right) slightly on the lower, this end) is positioned at the side of the upper surface of target 8.Wherein, inductive coupling antenna 151 is fixed in film forming chamber 130 with the state insulating with film forming chamber 130.
One end of each inductive coupling antenna 151 is connected with high frequency electric source 153 via matching circuit 152.In addition, the other end ground connection of each inductive coupling antenna 151.In this structure, flowing into high-frequency current (specifically from high frequency electric source 153 to each inductive coupling antenna 151, the high-frequency current of for example 13.56MHz) time, by inductive coupling antenna 151 electric field (high-frequency induction electric field) around, electronics is accelerated, thereby produce plasma (inductively coupled plasma (Inductively Coupled Plasma:ICP)) (the second plasma).This plasma producing, together with the plasma producing by above-mentioned electric field (the first plasma), is strapped in the surperficial part of target 8 by near the static magnetic field of magnet 13 formation target 8.
As mentioned above, inductive coupling antenna 151 is U word shape.The inductive coupling antenna 151 of such U word shape is equivalent to the inductive coupling antenna that the number of turns is less than a circle, because inductance compared with the inductive coupling antenna more than being a circle with the number of turns is lower, therefore the high-frequency voltage step-down producing at the two ends of inductive coupling antenna 151, thus be suppressed at the high-frequency fluctuation of the plasma potential of generation while carrying out electrostatic coupling with the plasma generating.Therefore, can reduce the excessive electronics loss of accompanying with the plasma potential fluctuation to above earth potential, plasma potential is suppressed especially lowly.The high frequency antenna of such inductive coupling is disclosed in addition, in No. 3836636 communique of Japanese Patent, No. 3836866 communique of Japanese Patent, No. 4451392 communique of Japanese Patent, No. 4852140 communique of Japanese Patent.
In one-tenth film unit 1, be formed with accordingly ejiction opening 16 with each sputtering source 10.Specifically, ejiction opening 16 is for example formed between each inductive coupling antenna 151 and target 8.As mentioned above, ejiction opening 16 is connected with gas supply part 50, and the gas of supplying with to ejiction opening 16 from gas supply part 50 is supplied to the processing space that disposes this sputtering source 10.But the formation position of ejiction opening 16 also needn't one fixes between inductive coupling antenna 151 and target 8.Wherein, preferably ejiction opening 16 is arranged on respectively on the position corresponding with two inductive coupling antennas 151.
< 2-3. becomes the action > of film unit 1
Then,, on the basis of Fig. 2, Fig. 3, on one side with reference to Fig. 4, describe for the action that becomes film unit 1 on one side.Fig. 4 is the figure that is illustrated in into the flow process of the processing of carrying out in film unit 1.Under the control of control part 190, carry out the action the following describes.
When being equipped with substrate 9(, in heated chamber 120, carried out the substrate 9 of heat treated) conveyance 90 move in the time that film forming chamber 130 is interior, close the door 160(step S1 of the inlet side of film forming chamber 130).In addition, always will in film forming chamber 130, remain high vacuum by high-vacuum exhaust system 170.
Then, gas supply part 50 is processed SPACE V a, Vb, Vc, Vd supply gas (step S2) respectively to 4.Specifically, (gas supply part 50 processes spaces to 3 of upstream side of carrying direction, first processes SPACE V a, second processes SPACE V b and the 3rd and processes SPACE V and c) supply with respectively as the argon of sputter gas with as the oxygen of reactant gas, (, the 4th process SPACE V and d) only supply with the argon as sputter gas to the processing space in the downstream side of carrying direction.
Wherein, (gas supply part 50 processes space to 3 two of processing upstream side in SPACE V a, Vb, Vc, that be disposed at carrying direction of the upstream side of carrying direction, first processes SPACE V a and second processes SPACE V and b) supplies with respectively the oxygen of the first amount F1, (, the 3rd process SPACE V and c) supply with the oxygen of the second amount F2 that is less than the first amount F1 to the surplus next space of processing.Wherein, now, the not aluminum oxide (Al of invention oxygen shortcoming will formed by reactive sputtering 2o 3) the minimum feed rate of the required oxygen of film is while being called " datum quantity F0 ", the first amount F1 is more than or equal to datum quantity F0, and the second amount F2 is less than datum quantity F0(F1>=F0 > F2).; in the time that the minimum value that formation is not occurred to for the partial pressure (oxygen partial pressure) of the oxygen of the pellumina of oxygen shortcoming is called " basis point pressure "; the first oxygen partial pressure of processing SPACE V a and the second processing SPACE V b is more than or equal to basis point pressure, and the 3rd oxygen partial pressure of processing SPACE V c is less than basis point pressure.
And, in 4 sputtering source 10a, 10b, 10c, 10d, flow into respectively high-frequency current (specifically, the high-frequency current of for example 13.56MHz) from high frequency electric source 153 to inductive coupling antenna 151, apply sputtering voltage (step S3) with power supply 12 to foundation plate 11 from sputter., by inductive coupling antenna 151 high-frequency induction electric field around, produce plasma (inductively coupled plasma) (so-called plasma is auxiliary).In addition, by applying sputtering voltage to foundation plate 11, near generating high density plasma target 8.Above-mentioned two kinds of plasmas are strapped in the surperficial part of target 8 by near the static magnetic field of magnet 13 formation target 8.Then, the ion in plasma ambient gas and target 8 bump, thereby make aluminium (Al) atom from target 8 disperse (so-called magnetron sputtering).
On the other hand, trucking department 180 along carrying path L(, along the orientation of multiple processing SPACE V a, Vb, Vc, Vd) be equipped with the conveyance 90(step S4 of substrate 9 with phase uniform velocity carrying).Be disposed in substrate 9 on conveyance 90 and process SPACE V a, second by first successively and process SPACE V b, the 3rd and process SPACE V c and the 4th and process SPACE V d, manage throughout and in space, carry out in order film forming processing.Wherein, as mentioned above, substrate 9 is so that the back side is disposed on conveyance 90 towards the state of a side contrary with conveyance 90 1 sides, and trucking department 180 is so that the posture facing to each sputtering source 10 of the side of conveyance 90 in being equipped with substrate 9 is carried conveyance 90., being handled upside down substrate 9 that device 90 keeps manages in space and is handled upside down throughout with the target 8 of its back side and each sputtering source 10 posture in opposite directions.
With reference to Fig. 5, on one side the processing of carrying out at the substrate 9 of film forming chamber 130 interior carryings is described on one side.Fig. 5 is the figure that the flow process of the processing to carrying out at the substrate 9 of film forming chamber 130 interior carryings is shown.
First, substrate 9 is processed SPACE V a, second by first successively and is processed SPACE V b and the 3rd processing SPACE V c.
Process SPACE V c to the first processing SPACE V a, the second processing SPACE V b and the 3rd and supply with respectively sputter gas and oxygen, carrying out under the auxiliary state of plasma, with the ion sputtering target 8 in plasma ambient gas.Therefore, process SPACE V b and the 3rd at the first processing SPACE V a, second and carry out respectively reactive sputtering in processing SPACE V c, by reactive sputtering with the back side of target 8 substrate 9 in opposite directions on form pellumina.,, during being handled upside down substrate 9 that device 90 keeps and processing SPACE V a, second and process SPACE V b and the 3rd and process SPACE V c by first successively, on the back side of substrate 9, form pellumina.Be " 50nm " from the 3rd preferred thickness of processing the pellumina of SPACE V c moment formation out.
Wherein, process to the first processing SPACE V a and second oxygen that SPACE V b supply is more than or equal to the first amount F1 of datum quantity F0, at above-mentioned processing SPACE V a, in Vb, under the environment of oxygen partial pressure that is more than or equal to basis point pressure, carry out reactive sputtering.Therefore, process in SPACE V b at the first processing SPACE V a and second, the aluminium atom sputtering from target 8 and the oxidation of q.s are closed and are formed Al 2o 3composition, thus with the back side of target 8 substrate 9 in opposite directions on form the pellumina (step S101) that oxygen shortcoming does not occur.
On the other hand, owing to only processing to the 3rd the oxygen that SPACE V c supply is less than the second amount F2 of datum quantity F0, therefore process in SPACE V c the 3rd, under the environment of oxygen partial pressure that is less than basis point pressure, (, the state of the number deficiency of oxygen) carries out reactive sputtering.Now, the aluminium atom sputtering from target 8 can not close with the oxidation of q.s, therefore forms the pellumina (the AlOx film of rich Al) that has excessive aluminium.That is, process in SPACE V c the 3rd, be formed at before with the back side of target 8 substrate 9 in opposite directions on the excessive pellumina (step S102) of the upper stratification aluminium of pellumina (pellumina of oxygen shortcoming does not occur).Wherein, " pellumina that aluminium is excessive ", in other words, refers to the pellumina of oxygen shortcoming, specifically, is the film that comprises the aluminium atom of aluminium atom that the key mapping of chemical reaction vacates, monomer.
Process SPACE V c substrate 9(out from the 3rd, be formed with the substrate 9 of pellumina on overleaf) be not exposed in atmosphere, process SPACE V d and then enter the 4th.
Process SPACE V d to the 4th and only supply with sputter gas, with the ion sputtering target 8 in plasma ambient gas.Therefore, process in SPACE V d the 4th, do not carry out reactive sputtering and carry out general sputter, by sputter at the back side of target 8 substrate 9 in opposite directions on form aluminium film.That is, during being handled upside down substrate 9 that device 90 keeps and processing SPACE V d by the 4th, the upper stratification aluminium film (step S103) of pellumina (wherein, top section is the excessive pellumina of aluminium) on the back side that is formed at before substrate 9.Be " 2 μ m～3 μ m " from the 4th preferred thickness of processing the aluminium film of SPACE V d moment formation out.
In addition,, when the processing expected in the 4th processes SPACE V d, plasma is auxiliary is not necessary.Be not, necessary to the action of the inductive coupling antenna 151 supply high frequency electric currents of the 4th sputtering source 10d.But, assist if carry out plasma, can form aluminium film with high yield polymer films.
Like this, from enter the first processing SPACE V a play from the 4th process SPACE V d out till during, on the back side of substrate 9, form the film (passive film) of the stepped construction with pellumina and aluminium film.,, during substrate 9 is processed SPACE V a, the second processing SPACE V b and the 3rd processing SPACE V c by first successively, on substrate 9, form pellumina (wherein, top section is the excessive pellumina of aluminium).Then, processing SPACE V c substrate 9 out from the 3rd is not exposed to atmosphere and directly enters the 4th and process SPACE V d.Then,, during substrate 9 is processed SPACE V d by the 4th, on the pellumina on the back side that is formed on before substrate 9, form aluminium film stackedly.
After the door 160 of outlet side of opening film forming chamber 130, take out of from the 4th and process SPACE V d substrate 9(out from film forming chamber 130, be formed with the substrate 9 of the film of the stepped construction with pellumina and aluminium film on overleaf).As mentioned above, the substrate 9 of taking out of from film forming chamber 130 is then moved into cooling chamber 140, carries out as required cooling process at this.
The feature > of < 3. films
Then, on one side with reference to Fig. 6, on one side for describing in the feature that becomes the film forming in film unit 1.Fig. 6 is the figure that is shown schematically in into the situation of the film 7 forming in film unit 1.
As mentioned above, becoming in film unit 1, on object (being substrate) 9, form the film 7 of the stepped construction with pellumina 71 and aluminium film 72 in above-mentioned example.
I. First Characteristic
Becoming in film unit 1, on object 9, form pellumina 71 by reactive sputtering.In sputter (no matter being reactive sputtering or general sputter), the combination that multiple atoms are combined into piles up to form film.Therefore, the film generating by sputter, compared with the film for example generating by ALD method, the former surface is coarse state.In coarse state (, there is the concavo-convex state of microcosmic) in the surface of the pellumina 71, generating in one-tenth film unit 1.
If laminated aluminium film 72 on the pellumina 71 of concave-convex surface, the aluminium atom of aluminium film 72 enters in pellumina 71 surfaces concavo-convex, thereby produces powerful fixed effect between pellumina 71 and aluminium film 72.That is, becoming in the film 7 forming in film unit 1, by fixed effect, pellumina 71 and aluminium film 72 are close to securely, are made the state of two films 71,72 in being difficult to peel off.
Ii. Second Characteristic
As mentioned above, becoming in film unit 1, during object 9 is processed SPACE V a, the second processing SPACE V b and the 3rd processing SPACE V c by first successively, on object 9, form pellumina 71.Then, process SPACE V c object 9 out from the 3rd and be not exposed to atmosphere and enter the 4th and process SPACE V d, at this, on the pellumina 71 forming before, form aluminium film 72 stackedly.
The surperficial reactivity that has just formed film pellumina 71 is afterwards higher, in easy absorption impurity (for example, nitrogen-atoms, nitrogen molecule, OH base (hydroxyl) etc.) state, if adsorb from the teeth outwards impurity, thereon in the situation of stratification aluminium film, easily damage the close property between film owing to being present in the impurity between film.At this, the object 9 that is formed with pellumina 71 is not exposed in atmosphere, stratification aluminium film 72 on the pellumina 71 being formed on this object 9.In this structure, the surface of pellumina 71 is not exposed in atmosphere and directly forms lid with aluminium film 72, is therefore difficult to the surface adsorption impurity at pellumina 71.Therefore, be difficult to produce because of the disruptive oxidation aluminium films 71 such as impurity and and the stacked aluminium film 72 of this pellumina 71 between the situation of close property, thereby make well two films 71,72 be close to.
Iii. the 3rd feature
As mentioned above, process in SPACE V c the 3rd, state (state of the number deficiency of oxygen) with the oxygen of supplying with fewer amount carries out reactive sputtering, therefore the top section of pellumina 71 is in the excessive state of aluminium (, comprising the state of the aluminium atom of aluminium atom that the key mapping of chemical reaction vacates, monomer).
If form aluminium film 72 on such pellumina 71 stackedly, the aluminium atom that is distributed in above-mentioned aluminium atom (the aluminium atom that the key mapping of chemical reaction is vacated, the aluminium atom of monomer) on the top layer of pellumina 71 and aluminium film 72 reaches the strong bonding force tractive each other of metallic bond.Thus, pellumina 71 and aluminium film 72 are close to especially securely.That is, form film by the top section that makes pellumina 71 with the state of the number deficiency of oxygen, can make pellumina 71 and aluminium film 72 be close to especially securely.
< 4. effect >
According to above-mentioned embodiment, can form the film 7 of the stepped construction with pellumina 71 and aluminium film 72.At this, form pellumina 71 by reactive sputtering.Reactive sputtering is for example compared with ALD method, and film forming speed is especially fast.Therefore, can form pellumina 71 with enough fast speed.
In addition, as mentioned above, according to above-mentioned embodiment, can form and have that pellumina 71 and aluminium film 72 are close to securely and the film 7 of the excellent specific property that is difficult to peel off.
In addition, in the above-described embodiment, pellumina 71 and aluminium film 72 all utilize the target 8 of aluminium to carry out film forming.Therefore, can make the control of film formation process become simply, can make apparatus structure simple.In addition, because the target 8 of aluminium is cheap, therefore can also suppress material cost.
In addition, according to above-mentioned embodiment, on pellumina 71, form aluminium film 72.The surperficial specific activity that has just formed the pellumina 71 after film is compared with high and especially easily adsorb impurity, but in the film 7 here obtaining, and does not expose and state in being covered by aluminium film 72 on the surface of pellumina 71.Therefore, can obtain being difficult to adsorb from the teeth outwards the film 7 of impurity.
In addition, according to above-mentioned embodiment, be divided into the interior carrying of film forming chamber 130 of multiple processing SPACE V a, Vb, Vc, Vd as the substrate 9 of object, thereby substrate 9 is being carried out to series of processes.According to this structure, compared with multiple film forming being processed to the situation that chamber is set respectively, can make the compact dimensions of film forming chamber 130, and can improve processing efficiency.
In addition, in the above-described embodiment, the p-type silicon substrate 9 that object is solar cell, on the back side of this substrate 9, formation has the film (passive film) 7 of the stepped construction of pellumina 71 and aluminium film 72.Pellumina is effective to improving the efficiency of conversion of solar cell, in addition, as passive film also excellent aspect electrical specification, sealing characteristic.On the other hand, pellumina has easy generation crack, easily adsorbs from the teeth outwards the shortcomings such as impurity.With respect to this, aluminium film has advantages of can easily realize higher yield polymer films, has softness on the other hand and holds flimsy shortcoming.At this, by making passive film 7 there is the stepped construction of pellumina 71 and aluminium film 72, there is high yield polymer films, there is again good electrical specification and sealing characteristic., can form with enough fast speed the passive film of electrical specification excellence and sealing excellent.
In addition, in the above-described embodiment, process between SPACE V d and the 3rd processing SPACE V c and be provided with throttle plate 30 the 4th.The impedance (conductance) of this throttle plate 30 becomes resistance, make to process the oxyradical that produces in SPACE V c and do not use etc. the first processing SPACE V a～three in reaction, do not flow into the 4th and process SPACE V d, and discharge and discharge to film forming chamber 130 from high-vacuum exhaust system 170.Therefore, the aluminium film 72 generating at the back side of substrate 9 in the 4th processes SPACE V d, can be the film that oxygen-free purity is high.
< 5. variation >
< 5-1. has the situation > of a sputtering source 10
In the above-described embodiment, become film unit 1 to there are 4 sputtering sources 10, but become film unit for example also can there is a sputtering source 10.Fig. 7 illustrates the one-tenth film unit 1s with a sputtering source 10.
The internal space of the film forming chamber 130s that one-tenth film unit 1s has forms one and processes SPACE V s, disposes below a sputtering source 10(in this processing SPACE V s, is also expressed as " sputtering source 10s ").Become film unit 1s, except the number difference of sputtering source 10, there is the structure identical with the one-tenth film unit 1 of above-mentioned embodiment.In the drawings, also mark identical Reference numeral to thering is the part of the structure identical with above-mentioned embodiment and function, and omit the explanation of this part.
For the gas supply part 50s to processing SPACE V s supply gas, same with the gas supply part 50 of above-mentioned embodiment, have: argon supply unit 51s, it supplies with sputter gas (at this, for example, being argon) to processing SPACE V s; The 52s of oxygen supply portion, it is to processing SPACE V s supply response gas (in this case oxygen).Argon supply unit 51s has: argon supply source 511; Argon supplying tubing 512, one end is connected with argon supply source 511, and the other end is connected in and the ejiction opening (specifically, the ejiction opening 16 of setting corresponding to sputtering source 10s) of processing SPACE V s and being connected.In addition, there is the supply valve 513s in the way, path that is arranged on argon supplying tubing 512.Under the control of control part 190, supply valve 513s adjusts the amount of the argon of supplying with to processing SPACE V s.In addition, the 52s of oxygen supply portion has: oxygen supply source 521; Oxygen supply pipe arrangement 522, one end is connected with oxygen supply source 521, and the other end is connected in and the ejiction opening 16 of processing SPACE V s and being connected.In addition, there is the supply valve 523s in the way, path that is arranged on oxygen supply pipe arrangement 522.Under the control of control part 190, supply valve 523s adjusts the amount of the oxygen of supplying with to processing SPACE V s.
On the basis of Fig. 7, on one side with reference to Fig. 5, Fig. 8, describe for the action that becomes film unit 1s on one side.Fig. 8 is the figure that is illustrated in into the flow process of the processing of carrying out in film unit 1s.In addition, as mentioned above, Fig. 5 is the figure that the flow process of the processing that substrate 9 is carried out is shown.Under the control of control part 190, carry out the action the following describes.
Be equipped with substrate 9(when moving in film forming chamber 130, in heated chamber 120, carried out the substrate 9 of heat treated) conveyance 90 time, trucking department 180 makes processing position that this conveyance 90 moves to regulation (specifically, be handled upside down substrate 9 that device 90 keeps and sputtering source 10s target 8 directly over position in opposite directions), in this processing position, conveyance 90 is remained to stationary state (step S11).; in the above-described embodiment; substrate 9 moves with respect to multiple sputtering source 10a, 10b, 10c, 10d on one side; continuously aforesaid substrate 9 is carried out to a series of film forming processing from each sputtering source 10 on one side; but in this distortion example; make, under the state that substrate 9 is static with respect to sputtering source 10s, from this sputtering source 10s, this substrate 9 to be carried out to a series of film forming processing.
On the other hand, when the conveyance 90 that is equipped with substrate 9 being moved into film forming chamber 130 when interior, close the door 160(step S12 of the inlet side of film forming chamber 130).In addition, high vacuum will always be remained by high-vacuum exhaust system 170 in chamber 130.The processing of step S11 and step S12 can be passable in the provisional capital of advancing with which, also can walk abreast and carry out.
Then, gas supply part 50 starts to processing SPACE V s supply gas (step S13).Wherein, in this stage, gas supply part 50 is supplied with as the argon of sputter gas and is more than or equal to the oxygen of the first amount F1 of datum quantity F0 to processing SPACE V s.Therefore, the oxygen partial pressure of processing SPACE V s is more than or equal to basis point pressure.
Then, in sputtering source 10s, flow into high-frequency current (specifically, the high-frequency current of for example 13.56MHz) from high frequency electric source 153 to inductive coupling antenna 151, and apply sputtering voltage (step S14) with power supply 12 to foundation plate 11 from sputter.
In this stage, supply with sputter gas and oxygen to processing SPACE V s, carrying out under the auxiliary state of plasma, with the ion sputtering target 8 in plasma ambient gas.Therefore, in this stage, carry out reactive sputtering, by reactive sputtering with the back side of target 8 substrate 9 in opposite directions on form pellumina.Wherein, in this stage, supply with to processing SPACE V s the oxygen that is more than or equal to datum quantity F0, processing in SPACE V s, under the environment of oxygen partial pressure that is more than or equal to basis point pressure, carry out reactive sputtering.Therefore the aluminium atom, sputtering from target 8 and the oxidation of q.s are closed and are formed Al 2o 3composition, thereby with the back side of target 8 substrate 9 in opposite directions on form the pellumina (step S101) that oxygen shortcoming does not occur.
From the processing of carrying out step S14 during through specific time, gas supply part 50 reduces to the amount (step S15) of processing the oxygen that SPACE V s supplies with.Specifically, gas supply part 50 switches to from the first amount F1 that is more than or equal to datum quantity F0 the second amount that is less than datum quantity F0 by the amount of the oxygen of supplying with to sputtering source 10.Therefore,, after carrying out the processing of step S15, the oxygen partial pressure of processing SPACE V s is less than basis point pressure.
In stage after the processing of carrying out step S15, also supply with sputter gas and oxygen to processing SPACE V s, carrying out under the auxiliary state of plasma, with the ion sputtering target 8 in plasma ambient gas.Therefore, in this stage, also carry out reactive sputtering, by reactive sputtering with the back side of target 8 substrate 9 in opposite directions on form pellumina.But, in this stage, only supply with to processing SPACE V s the oxygen that is less than datum quantity F0, therefore, in processing SPACE V s, under the environment of oxygen partial pressure that is less than basis point pressure, (, the state of the number deficiency of oxygen), carries out reactive sputtering.In this case, as mentioned above, the aluminium atom sputtering from target 8 can not close with the oxidation of q.s, therefore forms the pellumina that has excessive aluminium.,, in this stage, be formed at before the pellumina (step S102) excessive with the upper stratification aluminium of pellumina (pellumina of oxygen shortcoming does not occur) at the back side of target 8 substrate 9 in opposite directions.
When from the processing of carrying out step S15 through specific time (specifically, the pellumina being for example formed on the back side of substrate 9 arrives the thickness (for example thickness of " 50nm ") of expecting) time, gas supply part 50 stops to processing SPACE V s for oxygen supply (step S16).In addition, also can stop, stopping to inductive coupling antenna 151 supply high frequency electric currents for oxygen supply simultaneously.
In stage after the processing of carrying out step S16, only supply with sputter gas to processing SPACE V s, with the ion sputtering target 8 in plasma ambient gas.Therefore, in this stage, do not carry out reactive sputtering and carry out general sputter, thus by sputter at the back side of target 8 substrate 9 in opposite directions on form aluminium film.That is, in this stage, stratification aluminium film (step S103) on the pellumina (wherein, top section is the excessive pellumina of aluminium) that is formed at before the back side of substrate 9.
From the processing of carrying out step S16 through specific time (specifically, the thickness that is for example formed on the aluminium film on the back side of substrate 9 arrives the thickness (for example thickness of " 2 μ m～3 μ m ") of expecting) time, gas supply part 50 stops supplying with argon to processing SPACE V s.Then, stopping to inductive coupling antenna 151 supply high frequency electric currents and stopping applying after sputtering voltage to foundation plate 11, taking out of the conveyance 90(step S17 that is equipped with substrate 9 from film forming chamber 130).
Wherein, at least, before stopping supplying with argon to processing SPACE V s, can not destroy the vacuum of film forming chamber 130, during substrate 9 is carried out to the processing from step S101 to step S103, substrate 9 can not be exposed in atmosphere.That is, the substrate 9 that is formed with pellumina can not be exposed in atmosphere, then, and stratification aluminium film on the pellumina being formed on this substrate 9.
According to this variation, change by the amount that makes the oxygen of supplying with to processing SPACE V s, can on the substrate 9 as object, form the film of the stepped construction (stepped construction that especially, membrane structure little by little changes) with pellumina and aluminium film.According to this structure, can make apparatus structure simple.
In addition, in above-mentioned example, gas supply part 50 makes periodically to reduce to the amount of the oxygen of processing SPACE V s supply, but gas supply part 50 also can make the feed rate of oxygen along with little by little (continuously) reduction of time.In addition, the processing of step S15 is not necessary.But, if carry out the processing of step S15, form the excessive pellumina of top section aluminium 71, thus, as mentioned above, can improve the close property between pellumina 71 and aluminium film 72.
Other variation of < 5-2. >
In the above-described embodiment, process SPACE V b and supply with the oxygen of same amount to the first processing SPACE V a and second, but the feed rate of the feed rate of the oxygen of supplying with to the first processing SPACE V a and the oxygen supplied with to the second processing SPACE V b can not also identical value.The feed rate of the oxygen of wherein, preferably supplying with to the second processing SPACE V b is less than the feed rate of the oxygen of supplying with to the first processing SPACE V a.The feed rate of the oxygen of also preferably supplying with to the second processing SPACE V b in addition, is more than or equal to the 3rd processes the feed rate that SPACE V c supplies with.
In addition, in the above-described embodiment, process SPACE V c to the 3rd and supply with the oxygen of the amount that is less than the second processing SPACE V b, but also can be identical with the feed rate of the oxygen of supplying with to the second processing SPACE V b to the 3rd feed rate of processing the oxygen of SPACE V c supply.For example also can process SPACE V b and the 3rd and process SPACE V c and all supply with to the first processing SPACE V a, second oxygen of the first amount F1.
In addition, in the above-described embodiment, also can replace and make to become 0 to the 4th feed rate of processing the oxygen of SPACE V d supply, (or, make the feed rate of oxygen become 0, and) stop to inductive coupling antenna 151 supply high frequency electric currents.Stopping under the state of the inductive coupling antenna 151 supply high frequency electric currents of sputtering source 10, even there is oxygen in the 4th processes SPACE V d, also do not carrying out reactive sputtering and carry out general sputter.Therefore,, in this structure, also can in the 4th processes SPACE V d, form aluminium film.
In addition, in the above-described embodiment, stacked aluminium film 72 on pellumina 71, but lamination order is not limited thereto, also can be on aluminium film 72 stacked pellumina 71.That is, after also can being first used to form the processing of aluminium film 72 to substrate 9, stratification pellumina 71 on the aluminium film 72 forming.In the time carrying out such processing, for example in the above-described embodiment, (gas supply part 50 can process space to 3 of the downstream side of carrying direction, second processes SPACE V b, the 3rd processes SPACE V c and the 4th and processes SPACE V and d) supply with respectively as the argon of sputter gas with as the oxygen of reactant gas, only (, first process SPACE V and a) supply with the argon as sputter gas to the processing space of the upstream side of carrying direction.In addition, in this case, also process spaces (for two of the downstream side that being disposed at carrying direction in 3 processing SPACE V b, Vc, the Vd in the preferred downstream side to carrying direction, the 3rd processes SPACE V c and the 4th processes SPACE V and d) supplies with respectively the oxygen of the first amount F1, (, second process SPACE V and b) supply with the oxygen of the second amount F2 that is less than the first amount F1 to the surplus next space of processing.
In addition, be not limited to 4 or one in the number in the processing space of film forming chamber 130 interior regulations.In addition, also can manage throughout the more than one sputtering source 10 of configuration in space.
In addition, in the above-described embodiment, 4 of film forming chamber 130 interior regulations process in SPACE V a, Vb, Vc, Vd, 3 process spaces (, first processes SPACE V a, second processes SPACE V b and the 3rd and processes SPACE V and be used to form in c) processing of pellumina, in surplus next processing space (, the 4th processes SPACE V is used to form the processing of aluminium film in d), but be used to form pellumina processing space number and be used to form the ratio between the number in processing space of aluminium film, can select arbitrarily according to treatment condition etc.The in the situation that of forming pellumina in multiple processing space, preferably supply with the oxygen of the amount that is less than datum quantity F0 to processing space in the plurality of processing space, that be positioned at the position adjacent with the processing space that is used to form aluminium film.
In addition, in the above-described embodiment, in a film forming chamber 130, be provided with multiple sputtering sources 10, but also each sputtering source can be placed in independent chamber, and each chamber is connected via vacuum path.Like in this situation, the multiple chambers that are connected via vacuum path internal space separately forms one and processes space.
In addition, the chamber structure of the film deposition system 100 of above-mentioned embodiment is not limited to above-mentioned illustrative content.For example can in film deposition system, further increase treatment chamber, for example, also can omit at least one in heated chamber 120 and cooling chamber 140.
In addition, become the structure of film unit 1 to be also not limited to above-mentioned illustrative content.For example also can in one-tenth film unit 1, throttle plate 30 be set.
In addition, the structure of each sputtering source 10 is also not limited to above-mentioned illustrative content.For example, the number that is disposed at the inductive coupling antenna 151 of each sputtering source 10 might not be two, can suitably select according to the size of the size of the substrate 9 as plated film object, target 8 etc.In addition, sputter gas needn't be argon, for example, can be also krypton (Kr) gas.
In addition, as mentioned above, film formation method of the present invention is applicable to generate the passive film (especially, the passivating back film of p-type silicon substrate) of solar cell silicon substrate, but film formation method of the present invention also can be applicable to generate other various films.For example can be applicable to generate sealing film, the sealing film of solar cell etc. of various barrier films, OLED display.

Claims (7)

1. a film formation method forms film on object by magnetron sputtering, it is characterized in that,
Comprise:
Operation a), on one side by applying sputtering voltage to aluminium target, in processing space, produce the first plasma, and flow by the inductive coupling antenna that makes high-frequency current be less than a circle to the number of turns, in described processing space, produce the second plasma of inductive coupling, supply with sputter gas and oxygen on one side to described processing space aluminium target is carried out to sputter, thereby on described object, form pellumina by reactive sputtering
Operation b), carry out described operation a) before or described operation a) carry out afterwards, this operation b) in, in processing space, at least produce described the first plasma on one side, supply with sputter gas on one side to described processing space aluminium target is carried out to sputter, thereby form aluminium film on described object;
The described object that is formed with a kind of film in described pellumina and described aluminium film is not exposed in atmosphere, the another kind of film of stratification on the described a kind of film being formed on this object.
2. film formation method according to claim 1, is characterized in that,
In described operation a) afterwards, carry out described operation b).
3. film formation method according to claim 2, is characterized in that,
Described operation a) comprising:
Operation a1), on one side to the oxygen of processing space supply sputter gas and the first amount, carry out described reactive sputtering on one side,
Operation a2), one side is supplied with sputter gas to processing space and is less than the oxygen of the second amount of described the first amount, carries out described reactive sputtering on one side;
At described operation a1) carry out afterwards described operation a2).
4. according to the film formation method described in any one in claims 1 to 3, it is characterized in that,
Comprise operation c), be divided into multiple processing space in internal space and dispose respectively in the chamber of sputtering source in described multiple processing space, carry described object along the orientation in described multiple processing space,
Described operation a) b) is carried out in different processing spaces with described operation.
5. film formation method according to claim 4, is characterized in that,
Described a) operation comprises:
Operation a1), on one side to the oxygen of processing space supply sputter gas and the first amount, carry out described reactive sputtering on one side,
Operation a2), one side is supplied with sputter gas to processing space and is less than the oxygen of the second amount of described the first amount, carries out described reactive sputtering on one side;
Described operation a) b) is carried out in different processing spaces with described operation.
6. according to the film formation method described in any one in claims 1 to 3, it is characterized in that,
Comprise:
Operation d), forms one and processes space and dispose in the chamber of a sputtering source in described processing space in internal space, described object remained on and described sputtering source position in opposite directions,
Operation e), changes the amount of the oxygen of supplying with to described processing space;
Supplying, under the state of oxygen supply, to carry out described operation a) to described processing space,
Stopping, under the described processing space confession state of oxygen supply, carrying out described operation b).
7. according to the film formation method described in any one in claims 1 to 3, it is characterized in that,
Described object is silicon substrate.
CN201410122615.1A 2013-03-28 2014-03-28 Film forming method Pending CN104073769A (en)

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CN110129761A (en) * 2014-10-10 2019-08-16 佳能安内华股份有限公司 Film formation device
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