CN1040680A

CN1040680A - P-N knot series connection temperature sensor

Info

Publication number: CN1040680A
Application number: CN 88106496
Authority: CN
Inventors: 牛毓琦; 朱文有
Original assignee: Individual
Current assignee: Individual
Priority date: 1988-09-02
Filing date: 1988-09-02
Publication date: 1990-03-21

Abstract

The invention discloses a kind of temperature sensor of forming by the series connection of a plurality of P-N knot.Method is that they have common collector at the triode of doing on the single crystal epitaxial silicon chip more than two.Base stage, the emitter of these two above triodes are connected mutually, just obtain the temperature sensor of the P-N knot series connection more than two.This sensor process process is simple, cost is low and sensitivity improves n doubly (n is a P-N knot number) than single P-N junction temperature sensor.

Description

P-N knot series connection temperature sensor

The present invention relates to a kind of temperature sensor that is made of the series connection of two above p-N knots, is a kind of highly sensitive temperature sensor.

Existing p-N junction temperature sensor is generally all become by single p-N roped party.Its sensitivity is lower, has only about 2mv/ ℃.Though and its sensitivity of another kind of ic-type p-N junction temperature sensor can be accomplished 2nmv/ ℃ (n is a p-N knot number), non-very numerous and diverse in the technological process of this temperature-sensing element (device), comprise the photoetching of buried regions buried oxide, diffusion of buried layer, extension, isolation diffusion etc., to need 20 multiple tracks technologies such as scribing, sintering, pressure welding, sealing caps, technology than single p-N temperature sensor increases a lot, production cost is very high, and yield rate is because technological process increases and obviously decline.Though therefore this temperature sensor has higher sensitivity, is unfavorable for a large amount of application and popularization.

The objective of the invention is under the preceding topic of the technology difficulty that does not increase p-N junction temperature sensor, make every effort to promote the sensitivity of raising p-N junction temperature sensor by a relatively large margin, and make this temperature sensor become a kind of cheapness, be easy to the novel temperature sensor of penetration and promotion.

The concrete practice of the present invention is: at the triode of doing on the n type single crystal silicon sheet more than two, they have common collector (1), and base stage (4) emitter (5) of these two above triodes is connected mutually constitutes two above p-N knots temperature sensor of series connection mutually.

This plural p-N knot is the temperature sensor of series connection mutually.The single p-N junction temperature of remolding sensitivity sensor is improved: 2nmv/ ℃ (n is a p-N knot number).Promptly improved n doubly than single p-N junction temperature sensor.

Technological process of the present invention is simple, is integrated into the circuit type temperature sensor with p-N and compares and saved a lot of operational sequences.Be buried regions oxidation, buried regions photoetching, diffusion of buried layer, extension isolation oxidation, isolate procedures such as photoetching, isolation diffusion.Basic working procedure of the present invention only needs:

A, one deck Sio oxide layer (9) of on the n type single crystal silicon sheet, growing;

B, go up photoetching base window (2) at the above-mentioned monocrystalline silicon piece (1) that oxide layer (9) are arranged;

C, in base window (2), do boron impurities diffusion and oxidation;

D, on silicon chip photoetching emitter window (3), and do phosphorous diffusion, oxidation then;

E, on above-mentioned silicon chip simultaneously photoetching base lead hole (4) and emitter terminal hole (5);

F, evaporation of aluminum and photoetching aluminium are then made aluminium connecting line (6) and aluminium electrode (7) (8);

Last scribing is resolved into after the single chip, carries out sintering-pressure welding-connection aluminium electrode and outer lead-encapsulate-make set by step.

Because this temperature sensor technological process of a plurality of p-N knot series connection that makes on monocrystalline silicon piece is simple, entire chip is equivalent to an isolated area, and technological process is few.Cost is low, and yield rate is but reduced by technological process and improved a lot.At the temperature sensor that can obtain 10 p-N knots series connection more than 1500 on the epitaxial silicon chip of a φ 40.The single p-N junction temperature of remolding sensitivity sensor improves 10 times, reaches 20mv/ ℃ approximately.Thereby the resolution raising is a lot, can reach 0.01 ℃, the 25 yuan/sheet of monocrystalline silicon agreement that contracts a film or TV play to an actor or actress of a φ 40.So reached purpose cheaply.

Description of drawings:

Fig. 1, Fig. 2 are the embodiment of three p-N knot series connection temperature sensors.

Fig. 3 is the embodiment of ten p-N knot series connection temperature sensors.

1-N type monocrystalline silicon piece (collector); 2-base (p boron diffusion district); 3-launch site (phosphorous diffusion district); 4-base lead hole; 5-emitter terminal hole; 6-aluminium connecting line; 7-aluminium electrode; The 9-silicon dioxide layer.8-aluminium electrode.

Claims

1, a kind of temperature sensor of being formed by the series connection of P-N knot, it is characterized in that what this P-N knot series connection temperature sensor was made up of the series connection of the knot of the P-N more than two, promptly at the triode of directly doing on the n type single crystal silicon sheet more than two (N-p-N), they have common collector (1), above-mentioned transistor base (4), emitter (5) more than two connected mutually and constitute two above p-N knot series connection temperature sensors.