CN104064944B - Chemical laser device with seed injection amplification annular resonator - Google Patents
Chemical laser device with seed injection amplification annular resonator Download PDFInfo
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- CN104064944B CN104064944B CN201310095019.4A CN201310095019A CN104064944B CN 104064944 B CN104064944 B CN 104064944B CN 201310095019 A CN201310095019 A CN 201310095019A CN 104064944 B CN104064944 B CN 104064944B
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Abstract
The invention relates to chemical laser device with a seed injection amplification annular resonator, which is provided with the following component successively in the output direction of laser: a plane diffraction grating, a Brewster plate, a gain media region, a Brewster plate, a plano concave output mirror, a plane total reflector mirror, a polarizer, a quarter wave plate, a plano concave back-resonator mirror, an activated media gain region, a plane total reflection mirror, a plane total reflection mirror, a scraper mirror and a plano convex front-resonator mirror. According to the laser device of the invention, seed laser for line selection is coupled with and injected into an annular unstable-resonator chemical laser amplifier through the diffraction grating, and completion between a seed laser mode and an unstable-resonator amplifier resonator die is utilized for realizing controlling of seed laser to an annular unstable-resonator amplifier, and realizing line selection output of larger-power chemical laser. The chemical laser device has advantages of: high light beam quality, high energy, line selection output of the laser, etc. The chemical laser device can be widely applied for the fields of laser material processing, laser physics, laser tag, etc.
Description
Technical field
The invention belongs to chemical laser device field is and in particular to a kind of injection seeded amplifies annular chamber chemical laser.
Background technology
Chemical laser is output and output energy highest laser instrument in all so far laser instrument.Due to it
There is good, the preferable propagation in atmosphere window of high power, high efficiency, amplification performance, in laser physics, laser chemistry, material
The fields such as material processing, laser countermeasure (s) have very wide and important application.At present, many continuous wave chemical lasers such as HF/
DF laser instrument, HBr laser instrument etc. are all multiline output, and often require that laser instrument with some specific wavelengths in real work
Operating, the singlet operating of laser instrument in this case becomes very meaningful.
Balzed grating, can shift luminous energy and focus on the first-order spectrum with extremely strong dispersive power, be generally used for swashing
The intracavity of light device, as route selection device, realizes the laser of required wavelength by the angle that balzed grating, glazing is incided in adjustment
Output.Metallic substrates especially water-cooling type metallic substrates balzed grating, has higher damage-retardation Flaw characterization, can apply to power
In of a relatively high laser instrument, but for the laser instrument that high power chemical laser especially continuously runs for a long time, chamber
Interior high power density still can cause the damage of unrepairable to balzed grating, thus the route selection that cannot realize laser instrument is defeated
Go out.The route selection output of high power laser can be realized using the method that injection seeded amplifies, but due in this wave-length coverage,
There is no very effective optically isolated system, the feedback light that the standing-wave cavity amplifier generally adopting is formed still can be to seed laser
Device causes damage.And standing-wave cavity intensity noise is larger, threshold value is higher, and it is unfavorable for that laser instrument single line single mode runs.
Content of the invention
It is an object of the invention to overcoming above-mentioned deficiency, a kind of injection seeded annular chamber is provided to amplify chemical laser device,
This device can have Gao Gong by the traveling wave of seed laser is amplified with the route selection output realizing high power CW chemical laser
Low, the good frequency characteristic of rate, noise and beam quality, can route selection the features such as export.
For realizing the purpose of the present invention, particular technique solution is：
A kind of injection seeded amplifies annular chamber chemical laser device, including seed laser, injection amplification level and isolator,
In described seed laser, the light of output is reflected into isolator through plane completely reflecting mirror, enters after isolator one-way isolation
Be amplified in described injection amplification level and by amplify after light output；
Described isolator is made up of the polarizer and quarter wave plate；The described polarizer is positioned over adjacent plane completely reflecting mirror side,
And the angle and optical axis between is 54.5 °；Described quarter wave plate is positioned over neighbouring polaroid opposite side, and perpendicular to optical axis；
Described injection amplification level includes：Resonant reflec-tors after plano-concave, described plano-concave back cavity mirror center is provided with through hole；With
In the light after isolator one-way isolation, active medium gain region is entered by through hole, and receive resonant reflec-tors output before plano-convex
Light；Active medium gain region, for make through light amplification；Plane total reflective mirror I, puts for reflecting described active medium gain region
The light of big output；Plane total reflective mirror II, for the light of plane of reflection total reflective mirror I output；Scraper mirror, for converging plane total reflective mirror
The light of II output, and the light amplifying in injection amplification level is coupled output on scraper mirror；Resonant reflec-tors before plano-convex, for wearing
The light crossing described scraper mirror reflexes on resonant reflec-tors after described plano-concave.
In technique scheme of the present invention, described seed laser is by the plane diffraction grating being coaxially disposed, diaphragm, cloth scholar
This special piece I, gain medium zone, Brewster piece II, plano-concave output coupling mirror are constituted；Described plane diffraction grating and plano-concave output
Resonator cavity, gain medium zone both sides setting Brewster piece I and Brewster piece II is formed, in planar diffraction light between coupling mirror
Diaphragm is set between grid and Brewster piece I；Described plano-concave output coupling mirror is arranged adjacent to described plane completely reflecting mirror.
The size of the centre bore of the scraper mirror in the present invention is identical with the size of resonant reflec-tors before plano-convex.
The work process of laser aid of the present invention is as follows：Plane diffraction grating in seed laser is electronic for being placed on
On turntable, placed in Littrow mode, its angle is the angle of diffraction corresponding to route selection wavelength, meets grating equation（Whereinθ is angle of incidence and the angle of diffraction respectively, and d is that in distance between lines and the present invention, d is 1/
420mm, m are diffraction time）.Active medium when laser works, in seed optical gain region produced by chemical reaction
Produce excited radiation light, when these radiant lights incide on plane diffraction grating, meet the light edge of grating first-order diffraction wavelength
Backtracking, the light of other wavelength diffracted go out resonator cavity outside, the radiant light of return is in plano-concave coupling mirror and plane diffraction grating
Between the resonator cavity being formed, vibration is amplified, and couples output by plano-concave coupling mirror.Brewster piece in seed laser makes
The oscillation light obtaining intracavity is changed into the line polarized light parallel to the plane of incidence for the direction of vibration, for reducing the light loss of intracavity, intracavity
It is basic mode that diaphragm makes the pattern of the seed laser exporting.After the seed laser of output reflects through completely reflecting mirror, through optically isolated
After device one-way isolation, entered in injection amplification level by circular hole in annular chamber amplifier plano-concave Effect of Back-Cavity Mirror and be amplified, light every
From device play to amplifier in the oscillation light that reflects carry out the effect of one-way isolation.Enter into the seed in injection amplification level
When light passes through the active medium gain region of amplifier, extract the activation particle in gain region, produce stimulated radiation and amplify, after amplification
Radiant light by the plane mirror in injection amplification level, plano-convex front cavity mirror, plano-concave Effect of Back-Cavity Mirror reflection, with annular progression again
Carry out traveling wave amplification in secondary entrance active medium gain region, so move in circles, and output is coupled by scraper mirror.
Described diffraction grating is metallic substrates balzed grating, and its groove number is 420 lines/mm, and first-order diffraction efficiency is more than
97%.
Described plane diffraction grating is placed on electrical turntable.
Described seed laser midplane diffraction grating is placed in Littrow mode, and seed laser is shaken with first-order diffraction
Swing, by the coupling output of plano-concave output coupling mirror on described plane completely reflecting mirror.
54.5 ° of angle between described Brewster piece I and Brewster piece II and optical axis
The heretofore described polarizer refers to polaroid known to those of skill in the art.
The present invention has advantages below：
1st, the method using injection seeded laser amplifier, by the control to injection amplification level for the seed laser, can obtain big
The route selection output of power chemical laser.
2nd, laser amplifier adopts annular chamber, effectively prevent and feeds back to too high work(in injection light path by injection amplification level
Damage and impact that rate density causes on seed laser.And compared with standing-wave cavity, travelling-wave cavity has quality for outputting laser beam
Get well, intensity noise is low, the low advantage of threshold value, the route selection being more beneficial for laser instrument runs.
3rd, in seed laser, plane diffraction grating is placed in Littrow auto-collimation mode, rotates light using electrical turntable
The method of grid realizes route selection output.Laser instrument is vibrated with grating one-level, and output coupling mirror exports, method simple it is easy to operation, and
Injection optical path adjusting is convenient.
4th, injection amplification level adopts unsteady cavity structure, it is possible to obtain excellent beam quality.
Brief description
Fig. 1 is the structural representation that injection seeded annular chamber of the present invention amplifies chemical laser device.
Specific embodiment
As shown in drawings, injection seeded of the present invention amplifies annular chamber chemical laser device, including seed laser 1, injection
Amplifier stage 2 and isolator 3, in described seed laser 1, the light of output is reflected into isolator 3, warp through plane completely reflecting mirror 7
Enter after isolator 3 one-way isolation be amplified in described injection amplification level 2 and by amplify after light output；
Seed laser include along output laser direction of advance set gradually plane diffraction grating 11, diaphragm 12, cloth scholar
This special piece I 13, seed optical gain region 14, Brewster piece II 15, plano-concave output coupling mirror 16；
Isolator 3 is made up of the polarizer 31 and quarter wave plate 32；The described polarizer 31 is positioned over adjacent plane completely reflecting mirror 7
Side, and the angle and optical axis a between is 54.5 °；Described quarter wave plate 32 is positioned over the neighbouring polarizer 31 opposite side, and vertically
In optical axis a；
Described injection amplification level 2 includes：Resonant reflec-tors 21 after plano-concave, after described plano-concave, resonant reflec-tors 21 are provided centrally with leading to
Hole；Active medium gain region 22, plane total reflective mirror I 23, plane total reflective mirror II 24, scraper mirror 25, resonant reflec-tors 26 before plano-convex
Plane diffraction grating 11 in seed laser is to be placed on electrical turntable, is placed in Littrow mode.Logical
Cross rotating table so that the angle of diffraction of plane diffraction grating 11 is the angle corresponding to selected wavelength laser.When seed laser work
When making, produced by chemical reaction, the active medium of seed optical gain region 14 produces the excited radiation light of different wave length, when this
When a little radiant lights are by inciding on plane diffraction grating 11 after Brewster piece I 13, diaphragm 12, meet first-order diffraction wavelength
Light is reflected back intracavity along incident direction, the light of other wavelength diffracted go out chamber outside.The radiant light being reflected back passes through diaphragm 12, cloth scholar
This special piece I 13, seed optical gain region 14, Brewster piece II 15, reflect through plano-concave output coupling mirror 16, and export coupling in plano-concave
Close vibration between the resonator cavity that mirror 16 and plane diffraction grating 11 are formed to amplify, by plano-concave coupling mirror coupling 16 output linear polarization
Basic mode seed laser.Seed laser through completely reflecting mirror 7 reflection after, through the polarizer 31, quarter wave plate 32 composition optically isolated
Device, is entered in injection amplification level by the circular hole in injection amplification level plano-concave Effect of Back-Cavity Mirror 21 and is amplified.Optoisolator plays right
Feed back in injection amplification level amplifies the effect that light carries out one-way isolation.The seed light entering in injection amplification level passes through
During the active medium gain region 22 of injection amplification level, in gain region produced by chemical reaction when extracting injection amplification level work
Activation particle, produces stimulated radiation and amplifies.Radiant light after amplification is reflected by plane total reflective mirror I 23, plane total reflective mirror II 24, wears
Cross scraper mirror 25, resonant reflec-tors 21 reflection after plano-convex front cavity mirror 26, plano-concave is again introduced into active medium gain region 22 and carries out
Amplify, so move in circles.Seed laser by plano-concave Effect of Back-Cavity Mirror 21, plane total reflective mirror I 23, plane total reflective mirror II 24 reflection,
In the annular unsteady cavity that plano-convex front cavity mirror 26 is formed, vibration is amplified, and finally couples output by scraper mirror 25, obtains high-power choosing
Line laser.
The present invention is exported by the route selection of the control realization high power CW chemical laser to injection amplification level for the seed laser,
Laser amplifier using annular unsteady cavity structure, have the beam quality that loss is little, power is high, good, can the spy such as route selection output
Point, and seed laser will not be caused damage.Present invention could apply to HF/DF laser instrument, HBr laser instrument and pneumatic CO2Swash
The systems such as light device.
Claims (5)
1. a kind of injection seeded amplifies annular chamber chemical laser device it is characterised in that including seed laser (1), injection amplification
Level (2) and isolator (3), in described seed laser (1), the light of output is reflected into isolator through plane completely reflecting mirror (7)
(3), enter after isolator (3) one-way isolation be amplified in described injection amplification level (2) and by amplify after light output；
Described isolator (3) is made up of the polarizer (31) and quarter wave plate (32)；It is complete that the described polarizer (31) is positioned over adjacent plane
Reflecting mirror (7) side, and the angle and optical axis (a) between is 54.5 °；The neighbouring polarizer (31) of described quarter wave plate (32) is another
Side, and place perpendicular to optical axis (a) direction；
Described injection amplification level (2) includes：Resonant reflec-tors (21) after plano-concave, after described plano-concave, resonant reflec-tors (21) are provided centrally with
Through hole；For the light after isolator (3) one-way isolation, active medium gain region (22) is entered by through hole, and before receiving plano-convex
The light that resonant reflec-tors (26) export；Active medium gain region (22), for make through light amplification；Plane total reflective mirror
I (23), amplify the light of output for reflecting described active medium gain region (22)；Plane total reflective mirror II (24), for anti-
Penetrate the light that plane total reflective mirror I (23) exports；Scraper mirror (25), for converging the light that plane total reflective mirror II (24) exports, and will note
Enter the light amplifying in amplifier stage in scraper mirror (25) upper coupling output；Resonant reflec-tors (26) before plano-convex, for will be through institute
The light stating scraper mirror (25) reflexes on resonant reflec-tors (21) after described plano-concave.
2. injection seeded according to claim 1 amplify annular chamber chemical laser device it is characterised in that：Described seed swashs
Light device (1) by the plane diffraction grating (11) being coaxially disposed, diaphragm (12), Brewster piece I (13), gain medium zone (14),
Brewster piece II (15), plano-concave output coupling mirror (16) are constituted；Described plane diffraction grating (11) and plano-concave output coupling mirror
(16) resonator cavity, gain medium zone (14) both sides setting Brewster piece I (13) and Brewster piece II (15) are formed between,
Setting diaphragm (12) between plane diffraction grating (11) and Brewster piece I (13)；Described plano-concave output coupling mirror (16) is neighbouring
Described plane completely reflecting mirror (7) setting.
3. injection seeded according to claim 1 amplify annular chamber chemical laser device it is characterised in that：Described seed
Laser is single mode line polarized light.
4. injection seeded according to claim 2 amplify annular chamber chemical laser device it is characterised in that：Described seed
Laser instrument (1) midplane diffraction grating (11) is placed in Littrow mode, and seed laser is vibrated with first-order diffraction, defeated by plano-concave
Go out coupling mirror (16) coupling output on described plane completely reflecting mirror (7).
5. injection seeded according to claim 2 amplify annular chamber chemical laser device it is characterised in that：Described diffraction
Grating (11) is placed on electrical turntable.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310095019.4A CN104064944B (en) | 2013-03-22 | 2013-03-22 | Chemical laser device with seed injection amplification annular resonator |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310095019.4A CN104064944B (en) | 2013-03-22 | 2013-03-22 | Chemical laser device with seed injection amplification annular resonator |
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| Publication Number | Publication Date |
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| CN104064944A CN104064944A (en) | 2014-09-24 |
| CN104064944B true CN104064944B (en) | 2017-02-08 |
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| CN201310095019.4A Active CN104064944B (en) | 2013-03-22 | 2013-03-22 | Chemical laser device with seed injection amplification annular resonator |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106785854B (en) * | 2015-11-23 | 2019-01-25 | 中国科学院大连化学物理研究所 | A kind of hydrogen fluoride optical maser wavelength selection output Foldaway unstable resonator |
| CN106785855B (en) * | 2015-11-23 | 2019-01-25 | 中国科学院大连化学物理研究所 | A kind of high efficiency hydrogen fluoride laser grating unsteady cavity |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3753147A (en) * | 1972-06-23 | 1973-08-14 | Union Carbide Corp | Laser oscillator-amplifier system |
| US3919663A (en) * | 1974-05-23 | 1975-11-11 | United Technologies Corp | Method and apparatus for aligning laser reflective surfaces |
| US4267524A (en) * | 1979-03-08 | 1981-05-12 | Paxton Alan H | Unstable optical resonator with self-imaging aperture |
| US4490823A (en) * | 1983-03-07 | 1984-12-25 | Northrop Corporation | Injection-locked unstable laser |
| CN1744394A (en) * | 2005-09-29 | 2006-03-08 | 中国科学院光电技术研究所 | Automatic calibrating device in positive-branch confocal unstable resonator endoscope |
| CN1816951A (en) * | 2003-05-07 | 2006-08-09 | 联邦国家单一企业科学及工业公司瓦维洛夫光学研究所 | Laser with mixed non-stable annular resonator |
| CN102810810A (en) * | 2012-03-02 | 2012-12-05 | 中国科学院光电研究院 | Single-cavity dual-electrode discharging cavity and quasimolecule laser |
-
2013
- 2013-03-22 CN CN201310095019.4A patent/CN104064944B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3753147A (en) * | 1972-06-23 | 1973-08-14 | Union Carbide Corp | Laser oscillator-amplifier system |
| US3919663A (en) * | 1974-05-23 | 1975-11-11 | United Technologies Corp | Method and apparatus for aligning laser reflective surfaces |
| US4267524A (en) * | 1979-03-08 | 1981-05-12 | Paxton Alan H | Unstable optical resonator with self-imaging aperture |
| US4490823A (en) * | 1983-03-07 | 1984-12-25 | Northrop Corporation | Injection-locked unstable laser |
| CN1816951A (en) * | 2003-05-07 | 2006-08-09 | 联邦国家单一企业科学及工业公司瓦维洛夫光学研究所 | Laser with mixed non-stable annular resonator |
| CN1744394A (en) * | 2005-09-29 | 2006-03-08 | 中国科学院光电技术研究所 | Automatic calibrating device in positive-branch confocal unstable resonator endoscope |
| CN102810810A (en) * | 2012-03-02 | 2012-12-05 | 中国科学院光电研究院 | Single-cavity dual-electrode discharging cavity and quasimolecule laser |
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