CN104064613A - High-heat-dissipation type integrated backboard for solar cells and manufacturing method thereof - Google Patents
High-heat-dissipation type integrated backboard for solar cells and manufacturing method thereof Download PDFInfo
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- CN104064613A CN104064613A CN201410332759.XA CN201410332759A CN104064613A CN 104064613 A CN104064613 A CN 104064613A CN 201410332759 A CN201410332759 A CN 201410332759A CN 104064613 A CN104064613 A CN 104064613A
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- heat conduction
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- 239000000853 adhesive Substances 0.000 claims description 36
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 24
- -1 polyethylene Polymers 0.000 claims description 22
- 230000017525 heat dissipation Effects 0.000 claims description 20
- 229920005989 resin Polymers 0.000 claims description 19
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- 230000004888 barrier function Effects 0.000 claims description 15
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- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000003822 epoxy resin Substances 0.000 claims description 9
- 229920000647 polyepoxide Polymers 0.000 claims description 9
- 229920005644 polyethylene terephthalate glycol copolymer Polymers 0.000 claims description 9
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- 238000000034 method Methods 0.000 claims description 8
- 229920000098 polyolefin Polymers 0.000 claims description 8
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- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 7
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- 239000004925 Acrylic resin Substances 0.000 claims description 6
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
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- 229910052580 B4C Inorganic materials 0.000 claims description 3
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- 239000005030 aluminium foil Substances 0.000 claims description 3
- ZDNFTNPFYCKVTB-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,4-dicarboxylate Chemical group C=CCOC(=O)C1=CC=C(C(=O)OCC=C)C=C1 ZDNFTNPFYCKVTB-UHFFFAOYSA-N 0.000 claims description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 claims description 3
- UUAGAQFQZIEFAH-UHFFFAOYSA-N chlorotrifluoroethylene Chemical compound FC(F)=C(F)Cl UUAGAQFQZIEFAH-UHFFFAOYSA-N 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
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- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
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- 229920001169 thermoplastic Polymers 0.000 claims description 3
- 239000004416 thermosoftening plastic Substances 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 claims description 2
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 abstract 2
- 239000003795 chemical substances by application Substances 0.000 abstract 1
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- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 3
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
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- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
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- B32B15/082—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising vinyl resins; comprising acrylic resins
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- B32B15/085—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin comprising polyolefins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a high-heat-dissipation type integrated backboard for solar cells. The high-heat-dissipation type integrated backboard for solar cells is characterized by comprising a weather-proof blocking layer, a high heat conduction layer and a protective layer, the weather-proof blocking layer is installed on and bonded to the reverse side of a substrate through a first heat conduction bonding layer, the high heat conduction layer is installed on and bonded to the obverse side of the substrate through a heat conduction bonding layer, and the protective layer is installed on the high heat conduction layer. By the adoption of the integrated structure, production efficiency of an assembly can be improved. As the reverse side of the substrate is made of such materials and high heat conduction annexing agents are added into the high heat conduction layer of the obverse side of the substrate, the heat conduction rate of the backboard is improved and then the power generation efficiency of the assembly is improved.
Description
Technical field
The present invention relates to a kind of heat dissipation type high integrated backboard used for solar batteries and manufacture method thereof, relate in particular to a kind of used for solar batteries integrated backboard and manufacture method thereof of heat dissipation type high, belong to photovoltaic technology field.
Background technology
Along with the exhaustion of consumption increasingly of traditional fossil fuel, the mankind constantly seek new energy substitution scheme, solar energy is the green renewable resource of generally acknowledging at present, photovoltaic (PV) power generating industry has grown continuously and fast since the eighties in 20th century, how to effectively utilize solar energy and become the focus that current technical field of new energies is paid close attention to, according to " planning of regenerative resource Long-and Medium-term Development " of National Development and Reform Committee's establishment, to reach 2,500 ten thousand kilowatts to the year two thousand twenty China photovoltaic generation total capacity.In photovoltaic generating system, in PV assembly, along with the continuous irradiation of sunlight, silion cell plate can constantly heat up thereupon.Research shows, 1 DEG C of the every rising of silion cell temperature, its photovoltaic transfer ratio can decline 0.4%, has also reduced energy utilization rate, therefore how to make silion cell plate radiating and cooling become a large problem of current field of solar energy utilization to improve photovoltaic transfer ratio, but in industry, there is no ripe solution.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of heat dissipation type high integrated backboard used for solar batteries and manufacture method thereof, and the backboard that adopts the method to prepare has good cooling-down effect and good generating efficiency.
For solving the problems of the technologies described above, technical scheme of the present invention is: a kind of heat dissipation type high integrated backboard used for solar batteries, comprise base material, its innovative point is: be arranged on this substrate backside and be bonded in the weather-proof barrier layer of described substrate backside by the first heat conduction adhesive linkage, be arranged on this base material positive and be bonded in the high thermal conductivity layer in described base material front by the second heat conduction adhesive linkage, cover the protective layer above described high thermal conductivity layer, described high thermal conductivity layer is by polyolefin, polyethylene, polypropylene, polyvinyl acetate, polyurethane resin, ethylene-vinyl acetate copolymer, polyvinyl butyral resin, epoxy resin, acrylic resin, one or more in organic siliconresin mix, in described high thermal conductivity layer, described the first heat conduction tack coat and the second heat conduction tack coat, be all added with high heat conduction additive, described high heat conduction additive is mixed by one or more in zinc oxide, silicon dioxide, diamond, carborundum, aluminium oxide, boron nitride, boron carbide, Graphene, aluminium nitride, metal powder.
Preferably, described base material is mixed by one or more in PETG, polybutylene terephthalate, poly terephthalic acid diallyl, anodic oxidation aluminium plate, Merlon, and the thickness of described base material is 5 μ m ~ 500 μ m.
Preferably, described weather-proof barrier layer is for being mixed by one or more in polyflon, polyvinylidene fluoride resin, polyfluoroethylene resin, ethene ~ tetrafluoroethylene copolymer resins, fluorinated ethylene propylene copolymer resin, daiflon, thermoplastic fluorine-containing resin, aluminium foil, and the thickness of described weather-proof barrier layer is 5 μ m ~ 300 μ m.
Preferably, described the first heat conduction adhesive linkage and described the second heat conduction adhesive linkage mix by one or more in polyurethane adhesive, organic silica gel, polymer hot melting glue, epoxide-resin glue, and the thickness of described the first heat conduction adhesive linkage and described the second heat conduction adhesive linkage is 1 μ m ~ 50 μ m.
Preferably; described protective layer is mixed by one or more in polyolefin, polyethylene, polypropylene, polyvinyl acetate, polyurethane resin, ethylene-vinyl acetate copolymer, polyvinyl butyral resin, epoxy resin, acrylic resin, organic siliconresin, and the thickness of described protective layer is 10 μ m ~ 500 μ m.
Preferably, described high thermal conductivity layer thickness is 15 μ m ~ 300 μ m.
Preferably, described high heat conduction additive accounts for respectively 1% ~ 80% of described high thermal conductivity layer, described the first heat conduction tack coat and described the second heat conduction tack coat part by weight.
Preferably, described high heat conduction additive is of a size of 0.1 μ m ~ 50 μ m.
The manufacture method of a kind of heat dissipation type high integrated backboard used for solar batteries, for the manufacture of above-mentioned a kind of heat dissipation type high integrated backboard used for solar batteries, comprise the following steps: first heat conduction adhesive is coated on to base material both sides, after being heating and curing, form the first heat conduction tack coat and the second heat conduction tack coat, by the first heat conduction adhesive linkage, weather-proof barrier layer is bonded to substrate backside, then by the second heat conduction adhesive linkage, high thermal conductivity layer is bonded to base material front, then hot pressing composite protection layer on high thermal conductivity layer, after rolling, treated base material is sent into baking oven slaking.
The invention has the advantages that: owing to being added with high heat conduction additive in high thermal conductivity layer and the second heat conduction tack coat, improve the thermal conductivity of backboard to 0.5-1.5W/mk, and make backboard there is good cooling-down effect, can reduce the working temperature 1-5 DEG C of assembly, and then improve assembly generating efficiency 1 ~ 7.5%.In addition, the sandwich construction of backboard makes it have the dual-use function of conventional backboard and lower floor's ethylene-vinyl acetate copolymer packaging adhesive film, has reduced the laminating step of the EVA of lower floor packaging adhesive film when assembly is produced, and has improved assembly production efficiency.
Embodiment
Heat dissipation type high of the present invention integrated backboard used for solar batteries; comprise base material; be arranged on this substrate backside and be bonded in the weather-proof barrier layer of substrate backside by the first heat conduction adhesive linkage; be arranged on this base material positive and be bonded in the high thermal conductivity layer in base material front by the second heat conduction adhesive linkage, cover the protective layer above high thermal conductivity layer.High thermal conductivity layer is mixed by one or more in polyolefin, polyethylene, polypropylene, polyvinyl acetate, polyurethane resin, ethylene-vinyl acetate copolymer, polyvinyl butyral resin, epoxy resin, acrylic resin, organic siliconresin, and this high thermal conductivity layer thickness is 15 μ m ~ 300 μ m.In high thermal conductivity layer, the first heat conduction tack coat and the second heat conduction tack coat, be all added with high heat conduction additive, high heat conduction additive is mixed by one or more in zinc oxide, silicon dioxide, diamond, carborundum, aluminium oxide, boron nitride, boron carbide, Graphene, aluminium nitride, metal powder.In addition, high heat conduction additive accounts for respectively 1% ~ 80% of high thermal conductivity layer and the first heat conduction tack coat and the second heat conduction tack coat part by weight, and high heat conduction additive is of a size of 0.1 μ m ~ 50 μ m.
Above-mentioned base material is mixed by one or more in PETG, polybutylene terephthalate, poly terephthalic acid diallyl, anodic oxidation aluminium plate, Merlon, and the thickness of base material is 5 μ m ~ 500 μ m.Above-mentioned weather-proof barrier layer is to be mixed by one or more in polyflon, polyvinylidene fluoride resin, polyfluoroethylene resin, ethylene-tetrafluoroethylene copolymer resin, fluorinated ethylene propylene copolymer resin, daiflon, thermoplastic fluorine-containing resin, aluminium foil, and the thickness of weather-proof barrier layer is 5 μ m ~ 300 μ m.Above-mentioned protective layer is mixed by one or more in polyolefin, polyethylene, polypropylene, polyvinyl acetate, polyurethane resin, ethylene-vinyl acetate copolymer, polyvinyl butyral resin, epoxy resin, acrylic resin, organic siliconresin, and the thickness of protective layer is 10 μ m ~ 500 μ m.
Wherein, the first heat conduction adhesive linkage and the second heat conduction adhesive linkage mix by one or more in polyurethane adhesive, organic silica gel, polymer hot melting glue, epoxide-resin glue, and the thickness of the first heat conduction adhesive linkage and the second heat conduction adhesive linkage is 1 μ m ~ 50 μ m.
The manufacture method of above-mentioned heat dissipation type high integrated backboard used for solar batteries; for the manufacture of above-mentioned heat dissipation type high integrated backboard used for solar batteries; comprise the following steps: first heat conduction adhesive is coated on to base material both sides; after being heating and curing, form the first heat conduction tack coat and the second heat conduction tack coat; by the first heat conduction adhesive linkage, weather-proof barrier layer is bonded to substrate backside; then by the second heat conduction adhesive linkage, high thermal conductivity layer is bonded to base material front; then hot pressing composite protection layer on high thermal conductivity layer, sends treated base material into baking oven slaking after rolling.
embodiment 1
Heat-conduction polyurethane adhesive (containing 30% mass fraction aluminium oxide) is coated on to the two sides that thickness is the anodic oxidation aluminium base of 250 microns, formation thickness is the first heat conduction tack coat and the second heat conduction tack coat of 10 microns, at 80-90 DEG C by adhesive baking-curing 10 minutes, then at 110 DEG C, the anodised aluminium back side, hot pressing composite thickness is that the polyfluoroethylene resin of 28 microns forms weather-proof barrier layer, then the polypropylene screen hot pressing that contains 10% mass fraction silicon nitride and 20% mass fraction aluminium oxide of 300 micron thickness is compounded in to the positive high thermal conductivity layer that forms of anodised aluminium at 150 DEG C, wherein silicon nitride is of a size of 3-5 μ m, aluminium oxide is of a size of 5-10 μ m.Then the ethylene vinyl acetate adhesive film hot pressing that by thickness is 150 microns at 110 DEG C is compounded in polypropylene film surface, puts into baking oven slaking 24h at 60 DEG C after rolling, obtains integrated high heat conduction photovoltaic back after cooling.
The integrated high heat conduction photovoltaic back that this embodiment obtains, thermal conductivity is 0.5W/mk, the relatively conventional backboard of the component efficiency after encapsulation can promote respectively 1.5%.
embodiment 2
Heat-conduction polyurethane adhesive (containing 30% mass fraction aluminium oxide) is coated on to the two sides that thickness is the base material of the PETG of 250 microns, formation thickness is the first heat conduction tack coat and the second heat conduction tack coat of 10 microns, at 80-90 DEG C by adhesive baking-curing 10 minutes, then at 120 DEG C, the back side of PETG, hot pressing composite thickness is that the polyvinylidene fluoride resin of 28 microns forms weather-proof barrier layer, then the front that the polyolefin film hot pressing that contains 20% mass fraction Graphene of 300 micron thickness is compounded in to PETG at 150 DEG C forms high thermal conductivity layer, then the ethylene vinyl acetate adhesive film hot pressing that by thickness is 100 microns at 110 DEG C is compounded in polyolefin film surface, after rolling at 60 DEG C slaking 24h, after cooling, obtain integrated high heat conduction photovoltaic back.
The integrated high heat conduction photovoltaic back that this embodiment obtains, thermal conductivity is respectively 1.0W/mk, and the relatively conventional backboard of the component efficiency after encapsulation can promote respectively 3%.
embodiment 3
Heat-conduction polyurethane adhesive (containing 30% mass fraction aluminium oxide) is coated on to the two sides that thickness is the base material of the PETG of 188 microns, formation thickness is the first heat conduction tack coat and the second heat conduction tack coat of 10 microns, at 80-90 DEG C by adhesive baking-curing 10 minutes, then at 120 DEG C, the back side of PETG, hot pressing composite thickness is that the polyfluoroethylene resin of 28 microns forms weather-proof barrier layer, then the front that the ethylene vinyl acetate adhesive film hot pressing that contains 20% mass fraction aluminium nitride and 30% Graphene of 300 micron thickness is compounded in to PETG at 130 DEG C forms high thermal conductivity layer, then the butvar adhesive film hot pressing that by thickness is 100 microns at 110 DEG C is compounded in high thermal conductivity layer surface, after rolling at 60 DEG C slaking 24h, after cooling, obtain integrated high heat conduction photovoltaic back.
The integrated high heat conduction photovoltaic back that this embodiment obtains, thermal conductivity is 1.5W/mk, the relatively conventional backboard of the component efficiency after encapsulation can promote respectively 3.5%.
Above the invention embodiment is had been described in detail, but content is only for the preferred embodiment of the invention, can not be considered to the practical range for limiting the invention.All equalization variation and improvement etc. of doing according to the invention application range, within all belonging to the patent covering scope of the invention.
Claims (9)
1. a heat dissipation type high integrated backboard used for solar batteries, comprise base material, it is characterized in that: be arranged on this substrate backside and be bonded in the weather-proof barrier layer of described substrate backside by the first heat conduction adhesive linkage, be arranged on this base material positive and be bonded in the high thermal conductivity layer in described base material front by the second heat conduction adhesive linkage, cover the protective layer above described high thermal conductivity layer, described high thermal conductivity layer is by polyolefin, polyethylene, polypropylene, polyvinyl acetate, polyurethane resin, ethylene-vinyl acetate copolymer, polyvinyl butyral resin, epoxy resin, acrylic resin, one or more in organic siliconresin mix, in described high thermal conductivity layer, described the first heat conduction tack coat and the second heat conduction tack coat, be all added with high heat conduction additive, described high heat conduction additive is mixed by one or more in zinc oxide, silicon dioxide, diamond, carborundum, aluminium oxide, boron nitride, boron carbide, Graphene, aluminium nitride, metal powder.
2. a kind of heat dissipation type high as claimed in claim 1 integrated backboard used for solar batteries, it is characterized in that: described base material is mixed by one or more in PETG, polybutylene terephthalate, poly terephthalic acid diallyl, anodic oxidation aluminium plate, Merlon, and the thickness of described base material is 5 μ m ~ 500 μ m.
3. a kind of heat dissipation type high as claimed in claim 1 integrated backboard used for solar batteries, it is characterized in that: described weather-proof barrier layer is for being mixed by one or more in polyflon, polyvinylidene fluoride resin, polyfluoroethylene resin, ethene ~ tetrafluoroethylene copolymer resins, fluorinated ethylene propylene copolymer resin, daiflon, thermoplastic fluorine-containing resin, aluminium foil, and the thickness of described weather-proof barrier layer is 5 μ m ~ 300 μ m.
4. a kind of heat dissipation type high as claimed in claim 1 integrated backboard used for solar batteries, it is characterized in that: described the first heat conduction adhesive linkage and described the second heat conduction adhesive linkage mix by one or more in polyurethane adhesive, organic silica gel, polymer hot melting glue, epoxide-resin glue, and the thickness of described the first heat conduction adhesive linkage and described the second heat conduction adhesive linkage is 1 μ m ~ 50 μ m.
5. a kind of heat dissipation type high as claimed in claim 1 integrated backboard used for solar batteries; it is characterized in that: described protective layer is mixed by one or more in polyolefin, polyethylene, polypropylene, polyvinyl acetate, polyurethane resin, ethylene-vinyl acetate copolymer, polyvinyl butyral resin, epoxy resin, acrylic resin, organic siliconresin, and the thickness of described protective layer is 10 μ m ~ 500 μ m.
6. a kind of heat dissipation type high as claimed in claim 1 integrated backboard used for solar batteries, is characterized in that: described high thermal conductivity layer thickness is 15 μ m ~ 300 μ m.
7. a kind of heat dissipation type high as claimed in claim 1 integrated backboard used for solar batteries, is characterized in that: described high heat conduction additive accounts for respectively 1% ~ 80% of described high thermal conductivity layer, described the first heat conduction tack coat and described the second heat conduction tack coat part by weight.
8. a kind of heat dissipation type high as claimed in claim 1 integrated backboard used for solar batteries, is characterized in that: described high heat conduction additive is of a size of 0.1 μ m ~ 50 μ m.
9. the manufacture method of a heat dissipation type high integrated backboard used for solar batteries, for the manufacture of a kind of heat dissipation type high integrated backboard used for solar batteries described in any one wherein in claim 1 to 8, it is characterized in that comprising the following steps: first heat conduction adhesive is coated on to base material both sides, after being heating and curing, form the first heat conduction tack coat and the second heat conduction tack coat, by the first heat conduction adhesive linkage, weather-proof barrier layer is bonded to substrate backside, then by the second heat conduction adhesive linkage, high thermal conductivity layer is bonded to base material front, then hot pressing composite protection layer on high thermal conductivity layer, after rolling, treated base material is sent into baking oven slaking.
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