CN104064480A - 聚酰亚胺喷涂 - Google Patents
聚酰亚胺喷涂 Download PDFInfo
- Publication number
- CN104064480A CN104064480A CN201310097916.9A CN201310097916A CN104064480A CN 104064480 A CN104064480 A CN 104064480A CN 201310097916 A CN201310097916 A CN 201310097916A CN 104064480 A CN104064480 A CN 104064480A
- Authority
- CN
- China
- Prior art keywords
- polyimides
- voltage device
- tension apparatus
- high tension
- spraying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004642 Polyimide Substances 0.000 title claims abstract description 38
- 229920001721 polyimide Polymers 0.000 title claims abstract description 38
- 238000000576 coating method Methods 0.000 title claims abstract description 19
- 239000011248 coating agent Substances 0.000 title claims abstract description 10
- 238000004140 cleaning Methods 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000004033 plastic Substances 0.000 claims abstract description 9
- 238000005507 spraying Methods 0.000 claims description 21
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 4
- 238000012536 packaging technology Methods 0.000 description 4
- 238000010792 warming Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
Description
N2气体冲洗3次,气体流量300sccm,每次时间3s |
等离子清洗时间10s,气体流量300sccm,电极功率300W |
N2气体冲洗3次,气体流量300sccm,每次时间3s |
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310097916.9A CN104064480A (zh) | 2013-03-22 | 2013-03-22 | 聚酰亚胺喷涂 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310097916.9A CN104064480A (zh) | 2013-03-22 | 2013-03-22 | 聚酰亚胺喷涂 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN104064480A true CN104064480A (zh) | 2014-09-24 |
Family
ID=51552138
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310097916.9A Pending CN104064480A (zh) | 2013-03-22 | 2013-03-22 | 聚酰亚胺喷涂 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104064480A (zh) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1347357A (zh) * | 1999-02-19 | 2002-05-01 | 尤纳克西斯巴尔策斯公司 | 制造零部件的方法、这种方法的应用、置于空气中的工件和真空处理箱 |
CN1649936A (zh) * | 2002-05-30 | 2005-08-03 | 三井化学株式会社 | 粘合性树脂及使用该粘合性树脂的薄膜状粘合剂 |
JP2010065067A (ja) * | 2008-09-08 | 2010-03-25 | Tokyo Univ Of Agriculture & Technology | 粒子およびその製造方法、ならびにゲル |
CN102637650A (zh) * | 2011-02-09 | 2012-08-15 | 富士通株式会社 | 半导体装置及其制造方法以及电源 |
-
2013
- 2013-03-22 CN CN201310097916.9A patent/CN104064480A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1347357A (zh) * | 1999-02-19 | 2002-05-01 | 尤纳克西斯巴尔策斯公司 | 制造零部件的方法、这种方法的应用、置于空气中的工件和真空处理箱 |
CN1649936A (zh) * | 2002-05-30 | 2005-08-03 | 三井化学株式会社 | 粘合性树脂及使用该粘合性树脂的薄膜状粘合剂 |
JP2010065067A (ja) * | 2008-09-08 | 2010-03-25 | Tokyo Univ Of Agriculture & Technology | 粒子およびその製造方法、ならびにゲル |
CN102637650A (zh) * | 2011-02-09 | 2012-08-15 | 富士通株式会社 | 半导体装置及其制造方法以及电源 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
EXSB | Decision made by sipo to initiate substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
DD01 | Delivery of document by public notice |
Addressee: Liu Cuan Document name: Notification that Application Deemed not to be Proposed |
|
CB02 | Change of applicant information |
Address after: 343000 Jinggangshan economic and Technological Development Zone, Jiangxi, Ji'an, Jiangxi, China () Applicant after: JIANGXI CHUANGCHENG SEMICONDUCTOR CO., LTD. Address before: 343000 Jinggangshan economic and Technological Development Zone, Jiangxi, Ji'an, Jiangxi, China () Applicant before: Jiangxi Chuan Cheng semiconductor Co., Ltd |
|
COR | Change of bibliographic data | ||
C41 | Transfer of patent application or patent right or utility model | ||
DD01 | Delivery of document by public notice |
Addressee: Liu Cuan Document name: Notification of Passing Examination on Formalities |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20160727 Address after: 343000 Jinggangshan export processing zone, Jiangxi, No. Torch Road, No. 192 Applicant after: JIANGXI CHUANGCHENG ELECTRONIC CO., LTD. Address before: 343000 Jinggangshan economic and Technological Development Zone, Jiangxi, Ji'an, Jiangxi, China () Applicant before: JIANGXI CHUANGCHENG SEMICONDUCTOR CO., LTD. |
|
WD01 | Invention patent application deemed withdrawn after publication | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140924 |