CN104051571A - 一种晶体硅太阳能电池的加工方法 - Google Patents
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Abstract
本发明涉及一种晶体硅太阳能电池的加工方法，有如下步骤：将硅片进过表面结构化、制作发射极、周边刻蚀、磷硅玻璃去除、氮化硅膜、丝印正反面电极和背铝、烧结；最后将所得电池片进行高温退火。该方法对电池片中的微缺陷进行了有效修复的同时可以有效的提高氮化硅薄膜的均匀性以及致密性，增加了氮化硅薄膜的钝化效果，这样电池片的少数载流子寿命得到了一定提高，可使短路电流密度提高0.01-1mA/cm2，开路电压提高0.5-5mV，转化效率提高0.01-0.3%；另外，经过高温退火的电池片可以提高其抗PID的能力，具有重大的生产实践价值，增强企业的竞争力。
Description
技术领域
本发明涉及太阳能电池制作技术领域，具体涉及一种晶体硅太阳能电池的加工方法。
背景技术
在各种太阳电池中，晶体硅电池一直占据着最重要的地位。近年来，在晶体硅太阳电池提高效率和降低成本方面取得了巨大成就和进展，进一步提高了它在未来光伏产业中的优势地位。
氮化硅薄膜作为传统的晶体硅太阳能电池钝化减反膜，其性能的变化直接影响电池的转化效率。目前，无论从生产方还是使用方，对晶体硅电池片的极化效应（PID）的关注越来越多。2011年7月NREL在其发表的文章《System Voltage Potential Induced Degradation Mechanisms in PV Modules and Methods for Test》中对PID进行了详细的说明（1）。目前PID现象已被更多的人所了解，并有越来越多的研究机构和组件制造商对其进行了深入的研究和发表文章。PID Free被许多组件厂和电池厂作为卖点之一，许多光伏组件用户也开始只接受PID Free的组件。
发明内容
本发明的目的是针对上述问题提供的一种晶体硅太阳能电池的加工方法，将硅片进过表面结构化、制作发射极、周边刻蚀、磷硅玻璃去除、氮化硅膜、丝印正反面电极和背铝、烧结；最后将所得电池片进行高温退火。该方法对电池片中的微缺陷进行了有效修复的同时可以有效的提高氮化硅薄膜的均匀性以及致密性，增加了氮化硅薄膜的钝化效果，这样电池片的少数载流子寿命得到了一定提高，可使短路电流密度提高0.01-1mA/cm2，开路电压提高0.5-5mV，转化效率提高0.01-0.3%；另外，经过高温退火的电池片可以提高其抗PID的能力，具有重大的生产实践价值，增强企业的竞争力。
本发明的一种晶体硅太阳能电池的加工方法采用的技术方案，步骤包括：
（1）将硅片进过表面结构化、制作发射极、周边刻蚀、磷硅玻璃去除、氮化硅膜、丝印正反面电极和背铝、烧结；
（2）将步骤1所得电池片进行高温退火。
步骤（2）中所述的高温退火是将电池片放入退火炉中，通入保护气，在高温条件下保持一段时间。
退火炉内的温度为100-1000℃，在高温条件下保持时间为5-60分钟。
进一步的，退火炉内的温度为100-600℃。
优选的，退火炉内的温度为100-500℃。
进一步的，在高温条件下保持时间为20-40分钟.
优选的，在高温条件下保持时间为30-40分钟
所述的保护气为氨气、硅烷、氢气、氮气中的一种。
本发明的有益效果是：本发明方法对电池片中的微缺陷进行了有效修复的同时可以有效的提高氮化硅薄膜的均匀性以及致密性，增加了氮化硅薄膜的钝化效果，这样电池片的少数载流子寿命得到了一定提高，可使短路电流密度提高0.01-1mA/cm2，开路电压提高0.5-5mV，转化效率提高0.01-0.3%；另外，经过高温退火的电池片可以提高其抗PID的能力，具有重大的生产实践价值，增强企业的竞争力，适用于工业应用。
具体实施方式：
为了更好地理解本发明，下面结合实例来说明本发明的技术方案，但是本发明并不局限于此。
实施例1：
选择多晶硅片；将硅片进过表面结构化、制作发射极、周边刻蚀、磷硅玻璃去除、氮化硅膜、丝印正反面电极和背铝、烧结；最后将电池片放入退火炉中，升温至100℃，并通入H2进行退火40min，得到成品太阳能电池片。将本发明实施例1所得电池片与现有技术的电池片进行比较，结果如表1所示：
表1 太阳能电池片的电性能参数
。
实施例2：
选择单晶硅片；将硅片进过表面结构化、制作发射极、周边刻蚀、磷硅玻璃去除、氮化硅膜、丝印正反面电极和背铝、烧结；最后将电池片放入退火炉中，升温至500℃，并通入H2进行退火30min，得到成品太阳能电池片。将本发明实施例2所得电池片与现有技术的电池片进行比较，结果如表2所示：
表2 太阳能电池片的电性能参数
。
Claims (9)
1.一种晶体硅太阳能电池的加工方法，步骤包括：
（1）将硅片进过表面结构化、制作发射极、周边刻蚀、磷硅玻璃去除、氮化硅膜、丝印正反面电极和背铝、烧结；
（2）将步骤1所得电池片进行高温退火。
2. 根据权利要求1所述的一种晶体硅太阳能电池的加工方法，其特征在于：步骤（2）中所述的高温退火是将电池片放入退火炉中，通入保护气，在高温条件下保持一段时间。
3. 根据权利要求2所述的一种晶体硅太阳能电池的加工方法，其特征在于：退火炉内的温度为100-1000℃。
4. 根据权利要求2所述的一种晶体硅太阳能电池的加工方法，其特征在于：退火炉内的温度为100-600℃。
5. 根据权利要求2所述的一种晶体硅太阳能电池的加工方法，其特征在于：退火炉内的温度为100-500℃。
6. 根据权利要求2所述的一种晶体硅太阳能电池的加工方法，其特征在于：在高温条件下保持时间为5-60分钟。
7. 根据权利要求2所述的一种晶体硅太阳能电池的加工方法，其特征在于：在高温条件下保持时间为20-40分钟。
8. 根据权利要求2所述的一种晶体硅太阳能电池的加工方法，其特征在于：在高温条件下保持时间为30-40分钟。
9. 根据权利要求2所述的一种晶体硅太阳能电池的加工方法，其特征在于：所述的保护气为氢气、氨气、硅烷、氮气中的一种。
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113948608A (zh) * | 2021-08-31 | 2022-01-18 | 浙江正泰太阳能科技有限公司 | 一种N-TOPCon电池的绕镀多晶硅去除方法 |
| CN114256380A (zh) * | 2020-09-21 | 2022-03-29 | 比亚迪股份有限公司 | 一种太阳能电池片的制备方法及太阳能电池片 |
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