CN104051558B - solar panel and processing method thereof - Google Patents
solar panel and processing method thereof Download PDFInfo
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- CN104051558B CN104051558B CN201410324095.2A CN201410324095A CN104051558B CN 104051558 B CN104051558 B CN 104051558B CN 201410324095 A CN201410324095 A CN 201410324095A CN 104051558 B CN104051558 B CN 104051558B
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- 238000003672 processing method Methods 0.000 title claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 72
- 239000010703 silicon Substances 0.000 claims abstract description 72
- 241000446313 Lamella Species 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 23
- 238000009966 trimming Methods 0.000 claims abstract description 16
- 238000000465 moulding Methods 0.000 claims abstract description 5
- 239000003292 glue Substances 0.000 claims description 24
- 239000011324 bead Substances 0.000 claims description 23
- 239000011265 semifinished product Substances 0.000 claims description 13
- 238000005520 cutting process Methods 0.000 claims description 12
- 238000005538 encapsulation Methods 0.000 claims description 8
- 239000002390 adhesive tape Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 54
- 229920000139 polyethylene terephthalate Polymers 0.000 description 28
- 239000000047 product Substances 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 5
- 230000002411 adverse Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 3
- 229920002799 BoPET Polymers 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 230000002087 whitening effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical group 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
- B32B43/003—Cutting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of solar panel and processing method thereof, the silicon wafer lamella bondd including PCB substrate and PCB substrate and PET and the EVA combined films layer being bonded in silicon wafer lamella appearance, the surrounding edge of wherein said PCB substrate stretches out 5～10mm than the edge of silicon wafer lamella；This cell panel has the advantage that effective power is high；Its processing method comprises the steps: that (a) chip select is welded, (b) molding bonded, (c) trimming, and (d) toasts；The processing method of the present invention, in that context it may be convenient to process above-mentioned solar panel tool.
Description
Technical field
The present invention relates to a kind of cell panel, more specifically, particularly relate to a kind of solar panel；The invention still further relates to this electricity
The processing method of pond plate.
Background technology
As shown in Figure 6, traditional solar panel 40 mainly includes PCB substrate 10, silicon wafer flaggy 20 and PET and EVA
Combined films layer 30, and the mode passing sequentially through heat compound forms entirety, silicon wafer flaggy 20 is consistent with PCB substrate 10 area,
During installation in installation housing 50 is pasted or be assembled in by solar panel 40 by the way of buckle to double faced adhesive tape, its package assembly
Refering to shown in Fig. 7.
Traditional solar panel comes with some shortcomings when assembling, particularly as follows:
First, traditional solar panel is thicker, and after cell panel assembles with shell, the frame of shell can block a part
Silicon wafer, the silicon wafer causing a part can not absorb sunlight and is charged load, reduces effective power area；Outward
The frame of shell also can affect the silicon wafer near outside frame, and the light receiver of wide-angle not, reduce further effective power,
The effective power of traditional solar panel is less than 95%.
Second, traditional solaode plate thickness and gap are bigger, and product easily produces bubble, produce white edge after cut edge,
Product rejection rate is high, turns white and delamination problems never has way and solves, and difficulty of processing is big.
3rd, the processing technology of traditional solar panel is relatively low for the digital product qualification rate of high request, and outward appearance is the most up to standard,
Therefore can only require that than relatively low solar energy outdoor lamp decoration user be main, the digital product for high request at all can not be up to standard,
Can not mass production.
4th, present product is all towards powerful, and ultra-thin and ultra-light direction is developed, and traditional handicraft is thicker, whole product
The thick 10-15mm of meeting, the thickest grip is bad, poor user experience, it is difficult to meets client and is actually needed.
In sum, how to provide a kind of new solaode board machining process to reduce the difficulty of processing of solar panel also
The effective power improving solar panel becomes technological difficulties urgently to be resolved hurrily.
Summary of the invention
The previous purpose of the present invention is to provide a kind of solar panel, and this cell panel has the advantage that effective power is high.
It is a further object of the present invention to provide a kind of processing method processing above-mentioned solar panel, according to the processing side of the present invention
Method, in that context it may be convenient to process above-mentioned solar panel tool.
The previous technical scheme of the present invention is as follows:
A kind of solar panel, the silicon wafer lamella bondd including PCB substrate and PCB substrate and be bonded in silicon wafer lamella appearance
PET and EVA combined films layer, wherein, the surrounding edge of described PCB substrate than the edge of silicon wafer lamella stretch out 5～
10mm。
Further, the thickness of described PCB substrate is 8～10mm, and the thickness of silicon wafer lamella is 0.9～1.5mm, PET and
The thickness of EVA combined films layer is 6～12mm.
The latter technique scheme of the present invention is as follows:
The processing method of a kind of solar panel, comprises the steps:
A () chip select is welded: solar energy silicon crystal chip is cut in parts little silicon wafer that size equal-wattage is consistent on request, utilizes
Each little silicon wafer is welded together by copper wire；
(b) molding bonded: equidistantly arrange little silicon wafer according to PCB substrate shape need, and corresponding by double faced adhesive tape tabbing mode
It is bonded and fixed at directly over PCB substrate, then drips glue encapsulation and form silicon wafer lamella；
C () is laminated: bond PET and EVA combined films layer at silicon wafer lamella upper face, by PET and EVA combined films layer side
To laminated, edge carries out the process of stifled limit and forms cell panel semi-finished product；
(d) trimming: cell panel semi-finished product are carried out trimming process, PET and the EVA combination that excision silicon wafer lamella edge is unnecessary
Film layer.
Further, described PCB substrate thickness is 8mm～10mm, and the thickness of silicon wafer lamella is 0.9～1.5mm, PET and
The thickness of EVA combined films layer is 6～12mm.
Further, silicon wafer lamella surface configuration described in step (b) is consistent with the surface configuration of PCB substrate is rectangle,
The surrounding edge of PCB substrate stretches out 5～10mm than the edge of silicon wafer lamella.
Further, trimming in described step (d) processes and includes the most die-cut at bead cutter, then the film layer after die-cut is used
The laser scalpel degree of depth is cut.
Further, the bead cutter described in step (d) is provided with the device that level adapts to adjust automatically.
Further, the facet shape of the bead cutter described in step (d) matches with the surface configuration of described silicon wafer lamella,
Facet is constituted rectangular configuration by the combination of eight cutting dies, and four square position are respectively equipped with the angle cutter that cross section is right angle, adjacent
Being provided with a cross section between two described angle cuttves is the straight knife of yi word pattern, the edge of a knife more outwardly than the edge of a knife of straight knife 1 of angle cutter～
2mm。
Further, the cutting stroke of the bead cutter described in step (d) is less than or equal to silicon wafer lamella and PET and EVA group
Close the thickness sum of film layer two-layer.
Compared with prior art, the device have the advantages that into:
1. a kind of solar panel of the present invention, cell panel with shell laminating more preferably, makes the utilization rate of silicon wafer become 100%,
Effective power is higher.
2. the processing method of a kind of solar panel of the present invention, the most die-cut at bead cutter, bead cutter is provided with level and automatically adapts to
The device adjusted, to guarantee that a trimming will not be upspring cause the separation on solar energy surface to turn white and part because of encountering PCB base plate,
Even inactivity.The cutting die of bead cutter is straggly to differ, and the edge of a knife more outwardly than the edge of a knife of straight knife 1～2mm of angle cutter, due to angle
It is not easy at cutter to carry out the round and smooth processing of secondary chamfering, easily turns white or rupture solar battery sheet, just may be used at die-cut hour angle cutter
To switch to PCB substrate position, PET and the EVA combined films layer at four angles of solar energy semi-finished product is cut off, then pair cross-section
Place carries out degree of depth cutting, is realized by manual cutting-up, is thus easy to PET and the EVA combined films layer of whole periphery to remove,
Avoid and part occurs always, turn white and collapses the phenomenon on limit, improve work efficiency and success rate, lower accident rate, processing
More convenient.
Accompanying drawing explanation
Fig. 1 is cell panel structure schematic diagram of the present invention；
Fig. 2 is cell plate group assembling structure schematic diagram of the present invention；
Fig. 3 is present invention process schematic flow sheet；
Fig. 4 is that bead cutter cuts schematic diagram；
Fig. 5 is bead cutter cutting die schematic cross-section；
Fig. 6 is traditional solar panels structural representation；
Fig. 7 is traditional solar panels package assembly schematic diagram.
Detailed description of the invention
Below in conjunction with detailed description of the invention, technical scheme is described in further detail, but does not constitute the present invention
Any restriction.
Refering to shown in Fig. 1 and 2, a kind of solar panel of the present invention, bond with PCB substrate 1 including PCB substrate 1
Silicon wafer lamella 2 and be bonded in PET and the EVA combined films layer 3 of silicon wafer lamella appearance, wherein, the surrounding edge of PCB substrate 1
Edge stretches out 5～10mm than the edge of silicon wafer lamella 2.The thickness of PCB substrate 1 is 8～10mm, the thickness of silicon wafer lamella 2
Degree is 0.9～the thickness of 1.5mm, PET and EVA combined films layer 3 is 6～12mm.Outside solar panel is with digital product
Shell 6 is fitted more preferably, and shell rim and solar panel are in same plane, make the utilization rate of silicon wafer become 100%, effectively
Power is higher.
The processing method of described a kind of solar panel, processing technology sequentially comprises the steps:
A () chip select is welded: solar energy silicon crystal chip is cut in parts little silicon wafer that size equal-wattage is consistent on request, utilizes
Each little silicon wafer is welded together by copper wire.
(b) molding bonded: equidistantly arrange little silicon wafer according to PCB substrate 1 shape need, and by double faced adhesive tape tabbing mode pair
Should be bonded and fixed at directly over PCB substrate 1, then drip glue encapsulation and form silicon wafer lamella 2；
Refering to shown in Fig. 1 and 2, silicon wafer lamella 2 surface configuration is consistent with the surface configuration of PCB substrate 1 is rectangle, PCB
The surrounding edge of substrate 1 stretches out 5～10mm than the edge of silicon wafer lamella 2.The technique of the present invention can be by solaode
Plate and digital product shell 6 are fitted more preferably, make the utilization rate of silicon wafer become 100%, and effective power is higher.
Dripping glue encapsulation uses secondary to drip glue, and semi-finished product first drip one layer of ratio evacuation after relatively thin anticorrosion glue, then true being pumped through
Empty anticorrosion glue carries out second time and drips glue, uses secondary to drip glue and can solve to drip the problem that glue is excessive.Drip the anti-of glue encapsulation use
Epoxy resin glue selected by rotten glue, can bear 75 degree of high humiditys 100% of high temperature, and Exposure to Sunlight and low temperature and low humidity etc. simulate adverse circumstances,
Non-whitening, does not affect the power of solar panel plate, waterproof anti-corrosion, and quality is more stable.
C () is laminated: bond PET and EVA combined films layer 3 at silicon wafer lamella 2 upper face, by PET and EVA combined films
Layer 3 direction are to laminated, and edge carries out the process of stifled limit and forms cell panel semi-finished product；
(d) trimming: cell panel semi-finished product are carried out trimming process, PET and the EVA group that excision silicon wafer lamella 2 edge is unnecessary
Close film layer 3.
Refering to Fig. 5, shown in 6, in step (d), trimming processes and includes the most die-cut at bead cutter, then the film layer after die-cut is used
The laser scalpel degree of depth is cut.Bead cutter is provided with the device that level adapts to adjust automatically, to guarantee that a trimming will not be because of meeting PCB
Base plate is upspring and is caused the separation on solar energy surface to turn white and part, even inactivity.The facet shape of bead cutter and described silicon
The surface configuration of wafer layer 2 matches, and facet is constituted rectangular configuration by eight cutting die combinations, and four square position are respectively equipped with
One cross section is the angle cutter 4 at right angle, is provided with the straight knife 5 that cross section is yi word pattern, angle cutter between adjacent two described angle cuttves 4
The edge of a knife more outwardly than the edge of a knife of straight knife 5 1～2mm of 4.The cutting stroke of bead cutter is less than or equal to silicon wafer lamella 2 and PET
With the thickness sum of EVA combined films layer 3 two-layer, owing to Jiao Daochu is not easy to carry out the round and smooth processing of secondary chamfering, easily turn white or
Person ruptures solar battery sheet, and when utilizing bead cutter to be punched out solar panel, Jiao Daochu just can switch to PCB base
Board position, cuts off PET and the EVA combined films layer at four angles of solar energy semi-finished product.The degree of depth at pair cross-section cuts through hands
Work cutting-up realizes, and is thus easy to PET and the EVA combined films layer of whole periphery to remove, it is to avoid occur always part,
Turn white and collapse the phenomenon on limit, improve work efficiency and success rate, lowering accident rate, process more convenient.
PET film can use frosted PET to solve the wear-resistant problem born dirty, and the viscosity of special EVA and toughness are the strongest,
The multiple adverse circumstances test of simulation, non-whitening can be born, do not affect the power of solar panel, waterproof anti-corrosion, matter
Measure more stable.
The processing method of a kind of solar panel of the present invention, meets the outward appearance to interface of high-end digital product and electronic toy
Need, depart from the high thickness of traditional solar silicon wafers and base plate, can accomplish thinner under conditions of equal-wattage,
Lighter, the product low-carbon environment-friendly manufactured by present invention process, outdoor travel electric power storage can be met, continue backup, natural
The Emergency Light that disaster occurs, the purposes such as information transmission, range is wider.
The processing technology of the cell panel product processing a kind of rectangle solar energy emergency light with the process of the present invention below sequentially includes
Following steps:
Refering to shown in Fig. 1 and 2, the solar panel of this product, including PCB substrate 1 and the silicon of PCB substrate 1 bonding
Wafer layer 2 and PET and the EVA combined films layer 3 being bonded in silicon wafer lamella appearance, wherein, the surrounding edge ratio of PCB substrate 1
The edge of silicon wafer lamella 2 stretches out 5mm.The thickness of PCB substrate 1 is 8mm, and the thickness of silicon wafer lamella 2 is 1mm,
The thickness of PET and EVA combined films layer 3 is 6mm.Solar panel and digital product shell 6 are fitted more preferably, shell limit
Frame and solar panel are in same plane, make the utilization rate of silicon wafer become 100%, and effective power is higher.
The processing technology of this kind of solar panel sequentially comprises the steps:
A () chip select is welded: solar energy silicon crystal chip is cut in parts little silicon wafer that size equal-wattage is consistent on request, utilizes
Each little silicon wafer is welded together by copper wire；
(b) molding bonded: equidistantly arrange little silicon wafer according to PCB substrate 1 shape need, and by double faced adhesive tape tabbing mode pair
Should be bonded and fixed at directly over PCB substrate 1, then drip glue encapsulation and form silicon wafer lamella 2；
Refering to shown in Fig. 1 and 2, silicon wafer lamella 2 surface configuration is consistent with the surface configuration of PCB substrate 1 is rectangle, PCB
The surrounding edge of substrate 1 stretches out 5mm than the edge of silicon wafer lamella 2.The technique of the present invention can by solar panel with
Digital product shell 6 is fitted more preferably, and shell rim and solar panel are in same plane, make the utilization rate of silicon wafer become
100%, effective power is higher.
Dripping glue encapsulation uses secondary to drip glue, and semi-finished product first drip one layer of ratio evacuation after relatively thin anticorrosion glue, then true being pumped through
Empty anticorrosion glue carries out second time and drips glue, uses secondary to drip glue and can solve to drip the problem that glue is excessive.Drip the anti-of glue encapsulation use
Epoxy resin glue selected by rotten glue, can bear 75 degree of high humiditys 100% of high temperature, and Exposure to Sunlight and low temperature and low humidity etc. simulate adverse circumstances,
Non-whitening, does not affect the power of solar panel plate, waterproof anti-corrosion, and quality is more stable.
C () is laminated: bond PET and EVA combined films layer 3 at silicon wafer lamella 2 upper face, by PET and EVA combined films
Layer 3 direction are to laminated, and edge carries out the process of stifled limit and forms cell panel semi-finished product；
(d) trimming: cell panel semi-finished product are carried out trimming process, PET and the EVA group that excision silicon wafer lamella 2 edge is unnecessary
Close film layer 3.
Refering to Fig. 5, shown in 6, in step (d), trimming processes and includes the most die-cut at bead cutter, then the film layer after die-cut is used
The laser scalpel degree of depth is cut.Bead cutter is provided with the device that level adapts to adjust automatically, to guarantee that a trimming will not be because of meeting PCB
Base plate is upspring and is caused the separation on solar energy surface to turn white and part, even inactivity.The facet shape of bead cutter and described silicon
The surface configuration of wafer layer 2 matches, and facet is constituted rectangular configuration by eight cutting die combinations, and four square position are respectively equipped with
One cross section is the angle cutter 4 at right angle, is provided with the straight knife 5 that cross section is yi word pattern, angle cutter between adjacent two described angle cuttves 4
The edge of a knife 2mm more outwardly than the edge of a knife of straight knife 5 of 4.The cutting stroke of bead cutter less than or equal to silicon wafer lamella 2 and PET and
The thickness sum of EVA combined films layer 3 two-layer, owing to Jiao Daochu is not easy to carry out the round and smooth processing of secondary chamfering, easily turn white or
Rupturing solar battery sheet, when utilizing bead cutter to be punched out solar panel, Jiao Daochu just can switch to PCB substrate
Position, cuts off PET and the EVA combined films layer at four angles of solar energy semi-finished product.The degree of depth at pair cross-section cuts through craft
Cutting-up realizes, and is thus easy to PET and the EVA combined films layer of whole periphery to remove, it is to avoid occur always part,
Turn white and collapse the phenomenon on limit, improve work efficiency and success rate, lowering accident rate, process more convenient.
PET film can use frosted PET to solve the wear-resistant problem born dirty, and the viscosity of special EVA and toughness are the strongest,
The multiple adverse circumstances test of simulation, non-whitening can be born, do not affect the power of solar panel, waterproof anti-corrosion, matter
Measure more stable.
The foregoing is only presently preferred embodiments of the present invention, all made in the range of the spirit and principles in the present invention any amendment,
Equivalent and improvement etc., should be included within the scope of the present invention.
Claims (2)
1. the processing method of a solar panel, it is characterised in that comprise the steps:
A () chip select is welded: solar energy silicon crystal chip is cut in parts little silicon wafer that size equal-wattage is consistent on request, utilizes
Each little silicon wafer is welded together by copper wire；
(b) molding bonded: equidistantly arrange little silicon wafer according to PCB substrate (1) shape need, and with double faced adhesive tape tabbing side
Formula correspondence is bonded and fixed at directly over PCB substrate (1), then drips glue encapsulation and forms silicon wafer lamella (2)；
C () is laminated: at silicon wafer lamella (2) upper face bonding PET and EVA combined films layer (3), by PET and EVA group
Conjunction film layer (3) direction is to laminated, and edge carries out the process of stifled limit and forms cell panel semi-finished product；
(d) trimming: cell panel semi-finished product are carried out trimming process, PET and EVA that excision silicon wafer lamella (2) edge is unnecessary
Combined films layer (3)；
Described PCB substrate (1) thickness is 8mm～10mm, and the thickness of silicon wafer lamella (2) is 0.9～1.5mm, PET and EVA
The thickness of combined films layer (3) is 6～12mm；
Silicon wafer lamella (2) surface configuration described in step (b) is consistent with the surface configuration of PCB substrate (1) is rectangle,
The surrounding edge of PCB substrate (1) stretches out 5～10mm than the edge of silicon wafer lamella (2)；
Trimming in described step (d) process include the most die-cut at bead cutter, then the film layer laser scalpel degree of depth after die-cut
Cutting；
Bead cutter described in step (d) is provided with the device that level adapts to adjust automatically；
The facet shape of the bead cutter described in step (d) matches with the surface configuration of described silicon wafer lamella (2), cuts
Face is combined the rectangular configuration constituted by eight cutting dies, and four square position are respectively equipped with the angle cutter (4) that cross section is right angle,
Being provided with the straight knife (5) that cross section is yi word pattern between adjacent two described angle cuttves (4), the edge of a knife of angle cutter (4) compares straight knife
(5) the edge of a knife outwardly 1～2mm.
Processing method the most according to claim 1, it is characterised in that the cutting stroke of the bead cutter described in step (d)
Thickness sum less than or equal to silicon wafer lamella (2) Yu PET and EVA combined films layer (3) two-layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410324095.2A CN104051558B (en) | 2014-06-25 | 2014-07-08 | solar panel and processing method thereof |
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| CN2014203437148 | 2014-06-25 | ||
| CN201420343714 | 2014-06-25 | ||
| CN201420343714.8 | 2014-06-25 | ||
| CN201410324095.2A CN104051558B (en) | 2014-06-25 | 2014-07-08 | solar panel and processing method thereof |
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| CN104051558A CN104051558A (en) | 2014-09-17 |
| CN104051558B true CN104051558B (en) | 2016-08-31 |
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| CN106449869B (en) * | 2016-08-30 | 2017-09-29 | 嘉兴奥力弗光伏科技有限公司 | A kind of process equipment of photovoltaic module |
| CN106384104A (en) * | 2016-10-21 | 2017-02-08 | 南昌欧菲生物识别技术有限公司 | Fingerprint identification module and electronic device |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1265523A (en) * | 1999-01-14 | 2000-09-06 | 佳能株式会社 | Solar battery unit and generating device |
| CN101707909A (en) * | 2007-04-20 | 2010-05-12 | 三洋电机株式会社 | Solar cell module |
| CN101976693A (en) * | 2010-09-03 | 2011-02-16 | 黄生荣 | Structure of ultra-thin crystal-silicon solar battery pack and packaging method thereof |
| CN102117853A (en) * | 2009-12-31 | 2011-07-06 | 杜邦太阳能有限公司 | Solar panel |
| CN103325873A (en) * | 2013-05-14 | 2013-09-25 | 保定嘉盛光电科技有限公司 | Solar cell module and manufacturing process thereof |
| CN103620761A (en) * | 2010-07-22 | 2014-03-05 | 费罗公司 | Hermetically sealed electronic device using solder bonding |
| CN103681914A (en) * | 2013-11-21 | 2014-03-26 | 青岛宇泰新能源科技有限公司 | Solar panel |
-
2014
- 2014-07-08 CN CN201410324095.2A patent/CN104051558B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1265523A (en) * | 1999-01-14 | 2000-09-06 | 佳能株式会社 | Solar battery unit and generating device |
| CN101707909A (en) * | 2007-04-20 | 2010-05-12 | 三洋电机株式会社 | Solar cell module |
| CN102117853A (en) * | 2009-12-31 | 2011-07-06 | 杜邦太阳能有限公司 | Solar panel |
| CN103620761A (en) * | 2010-07-22 | 2014-03-05 | 费罗公司 | Hermetically sealed electronic device using solder bonding |
| CN101976693A (en) * | 2010-09-03 | 2011-02-16 | 黄生荣 | Structure of ultra-thin crystal-silicon solar battery pack and packaging method thereof |
| CN103325873A (en) * | 2013-05-14 | 2013-09-25 | 保定嘉盛光电科技有限公司 | Solar cell module and manufacturing process thereof |
| CN103681914A (en) * | 2013-11-21 | 2014-03-26 | 青岛宇泰新能源科技有限公司 | Solar panel |
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| CN104051558A (en) | 2014-09-17 |
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Denomination of invention: Blasting method and apparatus, thin-film solar cell panel and processing method thereof Effective date of registration: 20181226 Granted publication date: 20160831 Pledgee: Bank of China Limited by Share Ltd Guangzhou Liwan branch Pledgor: Guangzhou Aopeng Energy Technology Co.,Ltd. Registration number: 2018440000399 |