CN104051380B - Wiring system and technique - Google Patents
Wiring system and technique Download PDFInfo
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- CN104051380B CN104051380B CN201310470717.8A CN201310470717A CN104051380B CN 104051380 B CN104051380 B CN 104051380B CN 201310470717 A CN201310470717 A CN 201310470717A CN 104051380 B CN104051380 B CN 104051380B
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- opening
- light
- sensitive material
- patterning
- passivation layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Abstract
The invention provides a kind of wiring system and technique.In embodiment, by forming two passivation layer formation wires, wherein, each passivation layer is patterned respectively.Once being formed, then deposit crystal seed layer, and deposition conductive material in two passivation layers to fill and cross the pattern that filling is located in two passivation layers.It is then possible to using the flatening process such as chemically-mechanicapolish polished to remove excessive conductive material and form wire in two passivation layers.
Description
The cross reference of related application
This application claims the entitled of the U.S. Provisional Patent Application submitted on March 15th, 2013 the 61/789,593rd
" Conductive Line System and Process " priority, entire contents are hereby expressly incorporated by reference.
Technical field
The present invention relates to semiconductor applications, more particularly it relates to a kind of wiring system and technique.
Background technology
Generally, on a semiconductor substrate with active device and passive device are formed in Semiconductor substrate.Once being formed, then may be used
So that these active devices and passive device to be interconnected and externally connected device using a series of conductive and insulating barrier.This
A little layers can be helped to interconnect various active devices and passive device and for example, provided by contact pad to the electricity of external devices
Connection.In order to provide extra flexibility to design, passivation layer is formed after contact pad is formed and above contact pad
Afterwards, post-passivation cross tie part can be used to set external contacts in desired position.
The content of the invention
In order to solve the problems of in the prior art, according to an aspect of the invention, there is provided a kind of semiconductor
Device, including：Positive type photosensitive material is patterned, above substrate, the patterning positive type photosensitive material includes opening；Crystal seed
Layer, along the opening；And conductive material, the neighbouring crystal seed layer.
In the semiconductor devices, further comprise：Negative type photosensitive material is patterned, positioned at the substrate and the figure
Between case positive type photosensitive material.
In the semiconductor devices, the patterning negative type photosensitive material includes negative photosensitive polyimide material.
In the semiconductor devices, the patterning positive type photosensitive material includes positive photosensitive polyimide material.
In the semiconductor devices, the conductive material formation post-passivation cross tie part, wherein, the post-passivation cross tie part
Further comprise：Contact area；And wiring, it is laterally spaced-apart with the contact area.
In the semiconductor devices, the post-passivation cross tie part has the spacing less than about 5 μm.
In the semiconductor devices, the conductive material is copper.
According to another aspect of the present invention there is provided a kind of semiconductor devices, including：Pattern negative photosensitive polyimides
Layer, above substrate；And patterning positive photosensitive polyimide layer, positioned at the patterning negative photosensitive polyimide layer
Top is simultaneously in contact with the patterning negative photosensitive polyimide layer, and the patterning positive photosensitive polyimide layer is included extremely
A few opening.
In the semiconductor devices, further comprise：Crystal seed layer, extends along the side wall of at least one opening；
And conductive material, fill the remainder of at least one opening.
In the semiconductor devices, the conductive material formation post-passivation cross tie part, wherein, the post-passivation cross tie part
Further comprise：Contact area；And wiring, it is laterally spaced-apart with the contact area.
In the semiconductor devices, the post-passivation cross tie part has the spacing less than about 5 μm.
In the semiconductor devices, the conductive material is copper.
According to another aspect of the invention there is provided a kind of method for manufacturing semiconductor devices, methods described includes：By first
Light-sensitive material is arranged on above the conductive region above substrate；First light-sensitive material is patterned, to remove unexposed
One light-sensitive material and the exposure conductive region；Second light-sensitive material is arranged on above first light-sensitive material；Patterning
Second light-sensitive material, to remove the second light-sensitive material and the exposure conductive region of exposure, patterns second light
The second light-sensitive material and at least one opening in the second light-sensitive material of the patterning of quick material formation patterning；
And form crystal seed layer along the side wall of at least one opening.
In the process, first light-sensitive material is negative photosensitive polyimides.
In the process, second light-sensitive material is positive photosensitive polyimides.
In the process, first light-sensitive material is patterned to further comprise：By first light-sensitive material exposure
In patterning energy source；And after first light-sensitive material is exposed, first light-sensitive material is developed.
In the process, first light-sensitive material development is further comprised：Coat the first alkaline developer.
In the process, second light-sensitive material is patterned to further comprise：By second light-sensitive material exposure
In patterning energy source；And after first light-sensitive material is exposed, second light-sensitive material is developed.
In the process, second light-sensitive material development is further comprised：Coat the second alkaline developer.
In the process, further comprise：Conductive material is plated on the crystal seed layer；And utilize the of patterning
Two light-sensitive materials planarize the conductive material.
Brief description of the drawings
In order to which embodiment and its advantage is more fully understood, ginseng will be used as with reference to the following description that accompanying drawing is carried out now
Examine, wherein：
Fig. 1 is illustrated the sectional view of the substrate with the second passivation layer being located above contact pad according to implementation；
Fig. 2A to Fig. 2 B is illustrated patterning and the development of the second passivation layer according to implementation；
Fig. 3 is illustrated the setting of the 3rd passivation layer according to implementation；
Fig. 4 is illustrated patterning and the development of the 3rd passivation layer according to implementation；
Fig. 5 is illustrated curing process according to implementation；
Fig. 6 is illustrated the formation of crystal seed layer according to implementation；
Fig. 7 is illustrated the formation of conductive material according to implementation；
Fig. 8 is illustrated flatening process according to implementation；And
Fig. 9 is illustrated external contacts and cushion according to implementation.
Unless otherwise stated, corresponding numbers and symbols typically represents corresponding part in different accompanying drawings.Draw attached
Figure is to be clearly shown the related fields of embodiment and be not necessarily drawn to scale accompanying drawing.
Embodiment
The manufacture of various embodiments has been discussed in detail below and has used.It should be appreciated, however, that embodiment provides many
The applicable concept that can implement in various specific environments.The embodiment discussed is only manufacture and uses embodiment
Illustrative of specific ways, rather than limit the scope of embodiment.
Embodiment is described in conjunction with the embodiments in specific environment, i.e. using the technique similar to dual damascene blunt
Interconnection architecture is formed after change.However, also embodiment can be applied in other interconnection structures.
Referring now to Figure 1, it illustrates blunt including Semiconductor substrate 101, metal layer 103, contact pad 105, first
Change a part for the semiconductor element 100 of the passivation layer 109 of layer 107 and second.Semiconductor substrate 101 can include doping or not mix
Miscellaneous bulk silicon or silicon-on-insulator（SOI）The active layer of substrate.Generally, SOI substrate include such as silicon, germanium, germanium silicon, SOI,
Sige-on-insulator（SGOI）Or the semiconductor material layer of combinations thereof.Other substrates that can be used include MULTILAYER SUBSTRATE,
Gradient substrate or hybrid orientation substrate.
Active device can be formed in Semiconductor substrate 101（It is not shown）.Will as those of ordinary skill in the art
Recognize, the various active devices of such as capacitor, resistor, inductor can be used to generate for transistor
The desired structure of core 100 and the functional requirement of design.Can use any suitable method in the Semiconductor substrate 101 or
Active device is formed on its surface.
Metal layer 103 is formed above Semiconductor substrate 101 and active device, and is designed into connection different has
Source device is to form functional circuit.Figure 1 illustrates single layer, metal layer 103 can be by dielectric material（For example, low k is situated between
Electric material）And conductive material（For example, copper）Alternating layer formed, and any suitable method can be passed through（Such as deposit, inlay
Embedding, dual damascene etc.）Formed.In embodiment, metal layer can have four layers, and metal layer is situated between by least one interlayer
Electric layer（ILD）It is spaced apart with Semiconductor substrate 101, still, the exact magnitude of metal layer 103 depends on semiconductor element 100
Design.
Contact pad 105 can be formed in the top of metal layer 103 and made electrical contact with metal layer 103.Contact pad 105
Aluminium can be included, but it is also possible to alternatively use the other materials of such as copper.The depositing operation shape such as sputtered can be used
Into material layer（It is not shown）, may then pass through suitable technique（Such as mask and etching）Remove one of material layer
Point, so as to form contact pad 105.However, it is possible to use any other suitable technique formation contact pad 105.Can be with shape
Into thickness between about 0.5 μm and about 4 μm（Such as about 1.45 μm）Contact pad 105.
Can be in Semiconductor substrate 101, first passivation layer 107 of metal layer 103 and the formation of the top of contact pad 105.
Can be by one or more suitable dielectric materials（Such as silica, silicon nitride）, low K dielectrics（Such as carbon doping is aoxidized
Thing）, extremely low k dielectric（Such as porous carbon doped silicon dioxide）, combinations thereof etc. the first passivation layer 107 is made.It can lead to
Cross such as chemical vapor deposition（CVD）Technique the first passivation layer 107 of formation, however, it is also possible to using any suitable technique,
And the thickness of the first passivation layer 107 can between about 0.5 μm and about 5 μm, such as about 9.25。
After the first passivation layer 107 is formed, it can be made through first by removing a part of of the first passivation layer 107
The opening of passivation layer 107 is so as to expose at least a portion of lower contact pad 105.Opening causes the He of contact pad 105
It can be contacted between PPI803（Not shown in Fig. 1, but it is illustrated with reference to Fig. 8 and further discussed below
State）.Suitable mask and etch process formation opening can be used, but any suitable technique can also be used to reveal
Go out the part of contact pad 105.
It can form the second passivation layer 109 to contact contact pad 105 in the top of the first passivation layer 107 and opening.
In embodiment, for example, the negative photosensitive that the second passivation layer 109 can include such as negative photosensitive polyimide compositions is combined
Thing.For example, this negative photosensitive polyimide compositions can include negative photosensitive polyimides tree in the second passivation layer 109
Fat and the light-sensitive element being arranged in negative photosensitive polyimide solvent（PAC）.
In embodiment, negative photosensitive polyimide resin can be included by being made with the monomer by following structural formula
Polymer：
Wherein, X is quadrivalent organic radical group derived from the Alicyclic tetracarboxylic acid dianhydride with the carbon atom between 3 to 30；
A1It is oxygen atom or NH groups；And Y is the aliphatic of the carbon atom between with 3 to 30, alicyclic or unconjugated virtue
Divalent organic group derived from fragrant race's diamines, wherein side chain have one or more unsaturated ethylene linkages, cross-bond.R1It is to include one
The organic group with 1 to 20 carbon atom of the hydrogen atom of individual or multiple unsaturated ethylene linkages, or alternatively, R1It is that include can light
The group of the olefinic double bonds of polymerization.In certain embodiments, R1It may include following structure：
Wherein, in R2It is such as C2H3Or C3H5Aryl residue, R3 is that the alkene with least one photopolymerization is double
The residue of key, G is unsubstituted or bivalent aliphatic or aromatic group with one or more hydroxyl substituents, and A2 is oxygen
Atom or NR groups, wherein R represent hydrogen atom or C1-C4Alkyl group, A3 is oxygen atom or NR groups, and wherein R represents hydrogen atom
Or C1-C4Alkyl group, y is equal to 0 or 1 and Z and is equal to 0 or 1.
In addition, negative photosensitive polyimide resin can be one kind in embodiment as described above, and the negative photosensitive
Polyimide resin is not limited in particular instance as described herein.On the contrary, can be optionally with any suitable minus light
Quick polyimide resin, and all these photosensitive polyimide resins are entirely included in the range of embodiment.
PAC can be the photosensitive composition of photoacid generator, Photobase generator, free radical generating agent etc., and PAC can be with
Produce positive effect or negative effect.In one embodiment, PAC is photoacid generator, PAC can include halo triazine, salt,
Diazol, aromatic diazonium salt, microcosmic salt, sulfonium salt, salt compounded of iodine, acid imide sulfonate, sulfonic acid oxime, the sulfone of diazonium two, two sulfones, o- nitros
Benzyl sulfonate, sulfonated ester, halo sulfonyloxy dicarboximide, the sulfone of diazonium two, α-cyanogen oxygen amine sulfonate, acid imide sulfonic acid
Salt, ketone group diazonium sulfone, sulfonyl diazo ester, 1,2- bis-（Aryl sulfonyl）Hydrazine, p-Nitrobenzyl and s- pyrrolotriazine derivatives, they
Suitable combination etc..
Instantiation available for photoacid generator includes α-(trifluoro formyloxy)-two rings [2,2,1] hept- 5- alkene -2,
3- heavy carbonate-acid imide（MDT）, N- hydroxy-naphthalimides（DDSN）, benzoin tosylate, t- butylbenzene bases-α-
（P- tosyloxies）- acetate and t- butyl-α-（P- tosyloxies）- acetate, triaryl matte and Diaryl iodonium
Salt, hexafluoro antimonate, hexafluoro arsenate, fluoroform sulphonate, perfluorooctane sulfonate iodine, the formyl of N- camphor sulfonyloxies naphthalene two are sub-
Amine, N- phenyl-pentafluoride sulfonyloxies naphthalimide, ionic iodine sulfonate（Such as Diaryl iodonium（Alkyl or aryl）Sulphur
Hydrochlorate and double-（Two 2-methyl-2-phenylpropane bases）Iodine camsilate）, fluorinated alkyl sulfonate（Such as perflenapent sulfonate, perfluor are pungent
Alkyl sulfonate, perfluoromethane sulfonate）, aryl（For example, phenyl or benzyl）Fluoroform sulphonate（Such as triphenylsulfonium trifluoro
Mesylate or double-（Two 2-methyl-2-phenylpropane bases）Iodine trifluoro-methanyl sulfonate）, 1,2,3,-thrihydroxy-benzene derivative（For example, the three of 1,2,3,-thrihydroxy-benzene
Metilsulfate）, hydroxy imide trifluoromethayl sulfonic acid ester, α, α '-bis--sulfonyl-azomethane, nitro substituted benzyl alcohol
Sulphonic acid ester, naphthoquinones -4- triamterenes, the sulfone of alkyl two etc..
In another embodiment, wherein PAC is free radical generating agent, and PAC can include n- phenylglycines, aromatic ketone
（Such as Benzophenone, N, N '-tetramethyl -4,4 '-diaminobenzophenone, N, N '-tetraethyl -4,4 '-diaminobenzophenone,
- 4 '-dimethylamino of 4- methoxyl groups benzo-acyl benzene, 3,3 '-dimethyl -4- methoxyl group benzos ketone, p, p '-bis-（Dimethylamino）
Benzo-acyl benzene, p, p '-bis-（Lignocaine）- benzophenone, anthraquinone, 2- EAQs, naphthoquinones and phenanthrenequione）, benzoin（Such as
Benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin-n- butyl ethers, benzoin phenyl ether,
Methylbenzoin and ethyl benzoin）, benzyl derivative（Such as benzhydryl, benzyl diphenyl disulfide, benzyl
Dimethyl ketone, acridine derivatives（Such as 9- phenylacridines and 1,7- are double（9- acridinyls）Heptane）, thioxanthones（Such as 2- diurils ton
Ketone, 2- methyl thioxanthones, 2,4- diethyl thioxanthones, 2,4- dimethyl thioxanthones and ITX）, acetophenone（It is all
Such as 1,1- dichloroacetophenones, p-t- butyl dichloroacetophenone, 2,2- diethoxy acetophenones, 2,2- dimethoxy -2- phenyl benzene
Ethyl ketone and the chloro- 4- metaphenoxy acetophenones of 2,2- bis-）, 2,4,5- triarylimidazoles dimers（Such as 2-（O- chlorophenyls）- 4,5-
Diphenyl-imidazole dimer, 2-（O- chlorophenyls）- 4,5- bis-（M- methoxyphenyls）Imidazole dimer, 2-（O- fluorobenzenes
Base）- 4,5- diphenyl-imidazole dimer, 2-（O- methoxyphenyls）- 4,5- diphenyl-imidazole dimer, 2-（P- methoxybenzenes
Base）- 4,5- diphenyl-imidazole dimer, 2,4- bis-（P- methoxyphenyls）- 5- phenylimidazoles dimer, 2-（2,4- dimethoxies
Base phenyl）- 4,5- diphenyl-imidazole dimer and 2-（P- methyl mercaptophenyl-s）- 4,5- diphenyl-imidazole dimer, their conjunction
Suitable combination etc.）.
In one embodiment, wherein PAC is Photobase generator, and PAC includes quaternary ammonium dithiocar-bamate, alpha-amido
Ketone, oxime-urethane（Including such as urethane of diphenyl-ketoxime hexamethylene two）, four organic boronic ammonium salts and N-（2- nitro benzyloxy carbonyls
Base）Cyclammonium, their suitable combination etc..However, it will be recognized by those of ordinary skills chemical combination cited herein
The purpose of thing is only in that the example for showing PAC, is not intended to shall be limited only to embodiment in those PAC of specific descriptions.
On the contrary, arbitrarily suitable PAC can be alternatively used, and these PAC are entirely included in the range of embodiments of the invention.
In one embodiment, negative photosensitive polyimide solvent can be organic solvent, and can be comprising any suitable
Solvent such as ketone, alcohol, polyalcohol, ether, glycol ether, cyclic ethers, aromatic hydrocarbons, ester, propionate, lactate, lactic acid
Ester, alkylene glycol monoalkyl ethers, alkyl lactate ester, alkyl alkoxy propionate, annular lactone, the monoketone containing a ring
Compound, alkylene carbonate, alkyl alkoxy acetate, alkyl pyruvic acid, lactate, ethylene glycol alkyl ether acetic acid esters, diethyl
Glycol, propylene glycol alkyl ether acetic acid ester, aklylene glycol alkyl ether acetate, aklylene glycol monoalkyl ester etc..
Can be used as the solvent of negative photosensitive polyimides for negative photosensitive polyimide compositions material it is specific
Example include acetone, methanol, ethanol, toluene, dimethylbenzene, 4- hydroxy-4-methyl-2-pentanones, tetrahydrofuran, methyl ethyl ketone,
Cyclohexanone, methyl isoamyl ketone, 2-HEPTANONE, ethylene glycol, ethylene glycol acetate, ethylene glycol dimethyl ether, ethylene glycol dimethyl ether,
Ethylene Glycol Methyl ethylether, ethylene glycol monovinyl ether, methylcellosolve acetate（methyl celluslve acetate）、
Ethyl cellosolve acetate, diethylene glycol, diethylene glycol monoacetate, diethylene glycol monomethyl ether, diethylene glycol diethyl ether, diethyl
Glycol dimethyl ether, diethylene glycol ethyl methyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, 2 hydroxy propanoic acid ethyl ester, first
Base -2- hydroxyl -2- methyl propionates, ethyl -2- hydroxyl -2- methyl propionates, ethoxy ethyl acetate, hydroxyl ethyl acetate, methyl -
2- hydroxyl -2- methyl butyrates, 3- methoxy methyl propionates, 3- methoxypropionates, 3- ethoxypropanoates, 3- ethyoxyls
Ethyl propionate, ethyl acetate, butyl acetate, methyl lactate and ethyl lactate, propane diols, Propylene glycol monoacetate, propane diols list
Ether acetate, propylene glycol methyl ether acetate, propane diols list Neo-thyl acetic acid esters, propylene glycol monobutyl ether acetic acid esters, propane diols
Monobutyl ether-acetate, propylene glycol monomethyl ether propionate, dihydroxypropane single-ether propionic ester, propylene glycol methyl ether acetate, propane diols second
Ether acetic acid ester, propylene glycol methyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monomethyl ether, dihydroxypropane single-ether, the third two
Alcohol list propyl ether, propylene glycol monobutyl ether, glycol monoethyl ether, ethylene glycol monoethyl ether, methyl lactate, ethyl lactate, propyl lactate and
Butyl lactate, 3- ethoxyl ethyl propionates, 3- methoxy methyl propionates, 3- ethoxypropanoates, 3- methoxypropionates,
Beta-propiolactone, beta-butyrolactone, gamma-butyrolacton, Alpha-Methyl-gamma-butyrolacton, Beta-methyl-gamma-butyrolacton, gamma-valerolactone, γ-oneself
Lactone, γ-octalactone, Alpha-hydroxy-gamma-butyrolacton, 2- butanone, 3- espeletons, pinacolone, 2 pentanone, propione, 4- first
Base -2 pentanone, 2- methyl-propione, 4,4- dimethyl-2-pentanones, 2,4- dimethyl-propione, 2,2,4,4- tetramethyl -3-
Pentanone, methyl-n-butyl ketone, 3- hexanones, 5- methyl -3- hexanones, 2-HEPTANONE, 3- heptanone, 4- heptanone, 2- methyl -3- heptanone, 5- methyl -3-
Heptanone, 2,6- valerones, methyln-hexyl ketone, 3- octanones, methyl n-heptyl ketone, 3- nonanones, butyl ketone, 2- decanones, 3- decanones, the 4- last of the ten Heavenly stems
Ketone, 5- hexene -2- ketone, 3- amylene -2- ketone, cyclopentanone, 2- methyl-cyclopentanones, 3- methyl-cyclopentanones, 2,2- cyclopentanone dimethyls,
2,4,4- trimethyl cyclopentanone, cyclohexanone, 3- methyl cyclohexanones, 4- methyl cyclohexanones, 4- ethyl cyclohexanones, 2,2- diformazan basic rings
Hexanone, 2,6- dimethylcyclohexanons, 2,2,6- trimethylcyclohexanones, cycloheptanone, 2- methyl cycloheptanone, 3- methyl cycloheptanone, carbon
Acid propylene ester, vinylene carbonate, ethylene carbonate and butylene, acetic acid -2-methoxy-ethyl ester, acetic acid -2- ethyoxyls
Ethyl ester, acetic acid -2-（2- ethoxy ethoxies）Ethyl ester, acetic acid -3- methoxyl group -3- methyl butyls ester, acetic acid -1- methoxyl groups -2-
Propyl ester, DPG, monomethyl ether, single ethylether, single propyl ether, single-butyl ether, single phenyl ether, dipropylene glycol monoacetate,
Dioxanes, methyl lactate, ethyl lactate, methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, third
Ketone acid propyl ester, methoxy methyl propionate, ethoxyl ethyl propionate, 1-METHYLPYRROLIDONE（NMP）, 2- methoxy ethyl ethers（Two
Glyme）, ethylene glycol monoethyl ether, propylene glycol monomethyl ether；Ethyl lactate or methyl lactate, methyl propionate, ethyl propionate and
Ethoxyl ethyl propionate, methyl ethyl ketone, cyclohexanone, 2-HEPTANONE, carbon dioxide, cyclopentanone, cyclohexanone, 3- ethoxy-propionic acid second
Ester, ethyl lactate, propylene glycol methyl ether acetate（PGMEA）, methylene cellosolve, butyl acetate and cellosolvo, N- first
Base formamide, DMF, N- methyl formyl anilines, N- methylacetamides, DMA, N- methyl
Pyrrolidones, dimethyl sulfoxide (DMSO), benzylisoeugenol, two hexyl ethers, acetonyl acetone, isophorone, caproic acid, octanoic acid, 1- octanols, 1-
Nonyl alcohol, benzylalcohol, benzyl acetate, ethyl benzoate, diethy-aceto oxalate, diethyl maleate, gamma-butyrolacton, ethylene carbonate, carbon
Acid propylene ester, ethylene glycol monophenyl ether acetic acid esters（phenyl cellosolve acetate）Deng.
In embodiment, by negative photosensitive polyimide resin and PAC, and any desired additive or other examinations
Agent, is added in the negative photosensitive polyimide solvent for application.For example, the concentration of negative photosensitive polyimide resin can be with
Between about 5% and about 50%, such as 25%, and PAC concentration can between about 0.1% and 20%, such as 5%.Once add
Plus, then mix the mixture makes the composition of whole negative photosensitive polyimide compositions uniform so that it is guaranteed that being not present to reach
By it is uneven mixing or it is discontinuous constitute caused by defect.Once mixing, then negative photosensitive polyimide compositions can
With using it is preceding storage or use immediately.
Once be ready to, can by first by negative photosensitive polyimide compositions be coated on the first passivation layer 107 come
Utilize the second passivation layer 109.It can be applied by such as spin coating proceeding, dip coating, air knife coating method, curtain coating method, bar
Second passivation layer 109 is coated on the first passivation layer by cloth method, gravure coating process, laminating, extrusion coating methods, combinations thereof etc.
So that the second passivation layer 109 covers the surface of the upper exposed of the first passivation layer 107 on 107.The thickness of second passivation layer 109 is situated between
Between about 1 μm and about 40 μm.
Fig. 2A to Fig. 2 B shows patterning and the development of the second passivation layer.Once coating, then can be to the second passivation layer
109 are exposed to form exposure area 201 and unexposed area 203 in the second passivation layer 109., can be with embodiment
Start exposing operation by the way that the passivation layer 109 of substrate 101 and second is arranged in the image device 200 for exposure.Imaging
Device 200 can include supporting plate 204 and energy source 207, the pattern mask between supporting plate 204 and energy source 207
209 and optics（optics）213.In embodiment, supporting plate 204 is the semiconductor devices 100 that can be set or adhere to
With the surface of the second passivation layer 109 and its provided during the second passivation layer 109 is exposed to substrate 101 and support and control.This
Outside, supporting plate 204 can be moveable along one or more axles, and appoint to the offer of the passivation layer 109 of substrate 101 and second
The desired heating of meaning and cooling are so as to prevent temperature gradients and influence exposure technology.
In embodiment, energy source 207 supply such as to the second passivation layer 109 light energy 211 to induce PAC's anti-
Should, PAC comes in the second passivation layer of chemical modification 109 to be hit by energy 211 with the reaction of such as negative photosensitive polyimide resin again
Those parts.In embodiment, energy 211 can be electromagnetic radiation, such as g- rays（Wavelength is about 436nm）, i- rays
（Wavelength is about 365nm）, ultraviolet radiation, far-ultraviolet radiation, x- rays, electron beam etc..Energy source 207 can be electromagnetism spoke
Source is penetrated, and can be KrF PRKs（Wavelength 248nm）, ArF PRKs（Wavelength 193nm）, F2 PRKs
（Wavelength 157nm）Deng, but can also be adapted to optionally with any other of mercury vapor light, xenon lamp, carbon arc lamp etc.
Energy 211 source.
Pattern mask 209 is located between the passivation layer 109 of energy source 207 and second actually to impinge upon in energy 211
Portion of energy 211 is prevented to form patterning energy 215 before on second passivation layer 109.In embodiment, pattern mask
209 can include a series of layer（For example, substrate, absorbed layer, ARC, screen layer etc.）To reflect, absorb or with it
His mode blocking portion point energy 211 reaches the undesirable illuminated part in the second passivation layer 109.By through patterning
The opening of the formation of the shape to expect irradiation of mask 209 can form desired pattern in pattern mask 209.
When energy leaves energy source 207, by pattern mask 209 can for reduce, expand, reflection or with it
His mode controls the optics of energy 211（Trapezoidal label 213 is expressed as in fig. 2）Patterned, also, guide it
Towards the second passivation layer 109.In embodiment, optics 213 include one or more lens, speculum, optical filtering, they
Combination etc. with along its path clustering energy 211.In addition, showing that optics 213 is located at pattern mask 209 in fig. 2
And second between passivation layer 109, the element of optics 213（For example, single lens, speculum etc.）Energy source can also be located at
207（Produce the place of energy 211）And second passivation 109 layers between any position at.
In embodiment, the semiconductor devices 100 with the second passivation layer 109 is arranged in supporting plate 204.Once,
Pattern is aligned with semiconductor devices 100, then energy source 207 is generated passes through pattern mask 209 and optics device in the way of it
Part 213 reaches the desired energy 211 of the second passivation layer 109（For example, light）.The second of the shock of patterning energy 215 part is blunt
Change layer 109 to induce the PAC in the second passivation layer 109 to react.Then, the chemical reaction that the PAC of patterning energy 215 absorbs
Product（For example, acid/base/free radical）Reacted, the second passivation layer of the irradiation that pattern mask 209 is passed through with chemical modification
Those parts in 109.
Alternatively, it can expose the second passivation layer 109 using immersion lithography., can in this technology
With by immersing medium（It is not separately shown in fig. 2）It is arranged on image device 200（Particularly in the last of optics 213
Camera lens between）And second between passivation layer 109.After immersing medium is set, the pattern through immersing medium can be used
Change 215 pair of second passivation layer 109 of energy to pattern.
In this embodiment, protective layer can be formed in the top of the second passivation layer 109（Also do not show individually in fig. 2
Go out）To prevent immersing medium from entering and directly be contacted with the second passivation layer 109 and leach or negatively affect the second passivation layer
109.In embodiment, protective layer does not dissolve in immersing medium, so that immersing medium will not dissolve it, and in the second passivation layer
It is not miscible in 109, and then protective layer is influenceed the second passivation layer 109.In addition, protective layer is transparent
, to allow patterning energy 215 unhinderedly to pass through protective layer.
In embodiment, protective layer includes the protective layer resin being located in protective layer solvent.Material for protective layer solvent
Material, at least in part, depending on the compositional selecting of the second passivation layer 109 of selection, this is due to that protective layer solvent is passivated to second
The material of layer 109 should be insoluble, to avoid in the application of protective layer and during use the degraded of the second passivation layer 109.
In embodiment, the solvent of protective layer includes alcohols solvent, fluoride solvent and varsol.
Instantiation available for the material of protective layer solvent includes methanol, ethanol, 1- propyl alcohol, isopropanol, n- propyl alcohol, 1-
Butanol, 2- butanol, 2- methyl-2-propanols, 3- methyl-1-butanols, isobutanol, the tert-butyl alcohol, 1- amylalcohols, 2- amylalcohols, 3- amylalcohols, n-
Hexanol, cyclohexanol, 1- hexanols, 1-heptanol, 1- octanols, 2- hexanols, 2- enanthol, sec-n-octyl alcohol, 3- hexanols, 3- enanthol, 3- octanols, 4-
Octanol, 2- methyl -2- butanol, 3- methyl-1-butanols, 3- methyl -2- butanol, 2-methyl-1-butene alcohol, 2- methyl-1-pentenes alcohol, 2-
Methyl -2- amylalcohols, 2- methyl -3- amylalcohols, 3- methyl-1-pentenes alcohol, 3- methyl -2- amylalcohols, 3- methyl -3- amylalcohols, 4- methyl isophthalic acids -
Amylalcohol, 4- methyl -2- amylalcohols, 2,2,3,3,4,4- hexafluoros-n-butyl alcohol, 2,2,3,3,4,4,5,5- octafluoro -1- amylalcohols, 2,2,3,
3,4,4,5,5,6,6- ten fluoro- 1- hexanols, 2,2,3,3,4,4- hexafluoros -1,5-PD, 2,2,3,3,4,4,5,5- octafluoro -1,
6- hexylene glycols, 2, it is 2,3,3,4,4,5,5,6,6,7,7- ten two fluoro- 1,8- glycol, 2- fluoroanisoles, 2,3- difluoroanisoles, complete
Fluorine hexane, PF 5070, perfluor -2 pentanone, perfluor -2- butyl tetrahydrofurans, perfluor-tetrahydrofuran, perfluorotributylamine, perfluor
Four amylamines, toluene, dimethylbenzene and methyl phenyl ethers anisole and and aliphatic solvent（Such as n- heptane, n- nonanes, n- octanes, n- decane, 2-
Methyl heptane, 3- methyl heptanes, 3,3- dimethylhexanes, 2,3,4- trimethylpentanes, combinations thereof etc.）.
Protective layer resin may include protective layer repeat unit.In embodiment, protective layer repeat unit can include tool
Have the hydrocarbon structure repeated of carboxylic group, alicyclic class formation, with one to the alkyl of five carbon atoms, phenolic groups,
Or the acrylic resin of fluorine-containing atomic radical.The instantiation of alicyclic class formation include cyclohexyl groups, adamantyl group,
Norborny group, isobornyl group, tricyclodecyl group, tetracyclododecanyl group etc..The instantiation of alkyl group
Including n- butyl groups, isobutyl groups etc..However, it is also possible to optionally with any suitable protective layer resin.
Protecting layer compositions can also include extra additive to assist bonding, surface smoothing, coating etc..Example
Such as, protecting layer compositions may further include protective layer activating agent, but can also add other additives, and institute
There is this additive to be entirely included in the range of embodiment.In embodiment, protective layer activating agent can be alkyl
Cationic surfactant, quaternary ammonium salt cationic surfactant, quaternary ammonium ester type cationic surfactant, amine oxide surface
Activating agent, beet alkali surface activator, trialkylphosphine oxide surfactant, fatty acid surfactants, amide-type surface are lived
Property agent, alcohol surfactants, ethylenediamine surfactant or fluorine-containing and/or silicon surfactant.
Specific example available for the material of protective layer activating agent includes polyoxyethylene alkyl ether, such as（Polyoxy
Ethene lauryl ether, polyoxyethylene stearyl base ether, polyoxyethylene cetyl base ether and Brij92）, polyoxyethylene alkane
Base aryl ether（Such as polyoxyethylene octylphenol ether, polyoxyethylene nonylphenol ether）, polyox-yethylene-polyoxypropylene block copolymer,
Sorbitan fatty acid ester class,（Such as sorbitan mono-laurate, sorbitan monopalmitate, Sorbitan
Sugar alcohol monostearate, dehydrating sorbitol monooleate, anhydrosorbitol trioleate and the stearic acid of anhydrous sorbitol three
Ester）With polyoxyethylene 20 sorbitan monolaurate, polyoxyethylene 20 sorbitan monopalmitate, polyoxyethylene sorbitan mountain
Pears alcohol monostearate, polyoxyethylene 20 sorbitan trioleate and polyoxyethylene sorbitan tristearate.
Before protective layer to be coated on to the second passivation layer 109, protective layer resin and desired additive are added first
Into protective layer solvent to form protecting layer compositions.Then protective layer solvent is mixed to ensure that protecting layer compositions exist
There is consistent concentration in whole protective layer composition.
Once being ready for the protecting layer compositions of coating, then protecting layer compositions can be coated in the second passivation layer
109 tops.In embodiment, such as spin coating proceeding, dip coating, air knife coating method, curtain coating method, bar can be used to apply
Cloth method, gravure coating process, laminating, extrusion coating methods, combinations thereof etc. implement coating operation.In embodiment, coating the
Two passivation layers 109 are to make the thickness about 100nm of the surface of the second passivation layer 109.
After protecting layer compositions are applied to the second passivation layer 109, it is possible to implement protective layer prebake is to remove protection
Layer solvent.In embodiment, protective layer prebake can be implemented at the suitable temperature for evaporating protective layer solvent, be such as situated between
Between about 40 DEG C and 150 DEG C, but accurate temperature can also be used according to the selection of the material of protecting layer compositions.For solidification
With dry-run protection layer composition, implement protective layer prebake under the sufficient time, it is all as between about 10 seconds to about 5 minutes, it is all
Such as from about 90 seconds.
Once protective layer is arranged on the top of the second passivation layer 109, by the semiconductor devices with the second passivation layer 109
100 and protective layer be arranged in supporting plate 204, and immersing medium can be arranged between protective layer and optics 213.
In embodiment, immersing medium is the refractive index with more than surrounding air（Such as with the refractive index more than 1）Liquid.Submergence
The example of medium can include water, oil, glycerine, glycerine, cyclic alkanol etc., but can also be alternatively using any suitable Jie
Matter.
It can use such as air knife method that immersing medium is arranged between protective layer and optics 213, so that will
Fresh immersing medium is applied to the region between protective layer and optics 213, and uses the gas-pressurized towards protective layer
Immersing medium is controlled to form barrier and prevent the propagation of immersing medium.In this embodiment, can apply, using and from
Immersing medium is removed in protective layer to be reclaimed, so as to there is the fresh immersing medium for actual imaging technique.
However, the method for above-mentioned air knife is not the unique method that the second passivation layer 109 is exposed using immersion.
Any other suitable method being imaged to the second passivation layer 109 using immersing medium can be used, such as using solid
Body barrier is replaced gas shield or the whole passivation layer 109 of substrate 101 and second is submerged using the immersing medium without protective layer
And protective layer.Any suitable method that the second passivation layer 109 is exposed by immersing medium can be used, all these methods are all
In the range of embodiment.
Fig. 2 B are shown to be developed after the exposure of the second passivation layer 109 using developer to the second passivation layer 109.
Expose after the second passivation layer 109, the first developer can be used to develop the second passivation layer 109.In the second passivation layer
During 109 are the embodiment of negative photosensitive polyimide, the first developer can be alkaline aqueous solution to remove the second passivation layer 109
In be not exposed to the part of patterning energy 215.These alkaline aqueous solutions may include TMAH（TMAH）, four fourths
Base ammonium hydroxide, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium acid carbonate, sodium metasilicate, sodium metasilicate, ammoniacal liquor, monomethyl amine, diformazan
Amine, trimethylamine, monoethyl amine, diethylamine, triethylamine, single isopropylamine, diisopropylamine, tri-isopropyl amine, monobutylamine (MBA), dibutyl amine, Dan Yi
Hydramine, diethanol amine, triethanolamine, dimethylamino-ethanol, diethylaminoethanol, ammonia, caustic soda, caustic potash, sodium metasilicate, partially
Potassium silicate, sodium carbonate, tetraethyl ammonium hydroxide, combinations thereof etc..
In embodiment, the second passivation layer 109 is exposed using liquid immersion lithography and protects second blunt using protective layer
Change destruction of the layer 109 from immersion media, selection developer expects those removed portions to remove in the second passivation layer 109
Point, and it is chosen to remove protective layer in identical development step.It is alternatively possible to protective layer is removed in separating technology, such as,
By the separation solvent or etch process of developer to remove protective layer from the second passivation layer 109 before developing.
The first developer can be coated on the second passivation layer 109 using such as spin coating proceeding.In this technique when
Semiconductor devices 100（With the second passivation layer 109）During rotation, the is coated on from the top of the second passivation layer 109 by the first developer
On two passivation layers 109.In embodiment, the temperature of the first developer is between about 10 DEG C and about 80 DEG C, such as about 50 DEG C, and
And developing time can just last between about 1 minute and about 60 minutes, such as about 30 minutes.
Although however, after exposition, above-mentioned spin coating method is one kind for being developed to the second passivation layer 109
Suitable method, still, its is for illustrative purposes only and is not limited to embodiment.On the contrary, can also alternatively make
Include impregnation technology, puddling technique, spraying coating process, any suitable method of combinations thereof etc. with for development.It is all
These developing process are entirely included in the range of embodiment.
Fig. 2 B show the sectional view of developing process in embodiment, wherein, the first developer is used to remove the second passivation layer
Unexposed area in 109.Developer is coated on the second passivation layer 109 and the unexposed portion of the second passivation layer 109 is dissolved
203.The unexposed portion 203 of the second passivation layer 109 of this dissolving and removal remains in the second passivation layer 109 to pattern
First opening 217 of the second passivation layer of character patternization 109 of energy 215, so that the pattern that will be patterned into mask 209 is transferred to
Second passivation layer 109.In embodiment, the width of the first opening 217 is all as between about 5 μm between about 2 μm and about 30 μm
Between about 300 μm, and it can be such as circular, oval, polygonal any desired shape.
Fig. 3 is shown is arranged on the top of the second passivation layer 109 by the 3rd passivation layer 301.In embodiment, the 3rd passivation layer
301 can be positive type composition, such as positive photosensitive polyimide compositions（Instead of relative to described in the second passivation layer 109
Negative photosensitive polyimide compositions）.For example, positive photosensitive polyimide compositions can include a kind of positive photosensitive polyamides Asia
Polyimide resin and the PAC in positive photosensitive polyimide solvent.Positive photosensitive polyimide resin can be with embodiment
Be using following structural formula as repeat unit polymer：
Wherein Z is the quadrivalent organic radical group being derived by one or more tetrabasic carboxylic acids, including 3,4- dicarboxyl -1,2,3,
4- tetrahydrochysene -6- tert-butyl -1- naphthalene succinic dianhydrides（DTBDA）, or derivatives thereof, a is that 1 to 150, b is 1 to 400, Y1Be by
Divalent organic group derived from diamines, Y2It is bivalent aliphatic or aromatic organic radicals as derived from diamines.
Y1Instantiation include following structural formula：
Y2Specific example, including aromatic diamines, such as p-PDA, m- phenylenediamines, 2,4,6- trimethyl -1,3- benzene two
Amine, 2,3,5,6- tetramethyls-Isosorbide-5-Nitrae-phenylenediamine, 4,4 '-diaminodiphenyl ether, 3,4 '-diaminodiphenyl ether, 3,3 '-diaminourea
Diphenyl ether, 4,4 '-diaminodiphenyl sulfide, 4,4 '-MDA, 3,4 '-MDA, 3,3 '-diamino
Base diphenyl-methane, 4,4 '-di-2-ethylhexylphosphine oxide（2-aminotoluene）, 4,4 '-methylene-bis-（2,6- dimethylanilines）, 4,4 '-methylene
Base-bis-（2,6- diethylanilines）, 4,4 '-methylene-bis-（2- isopropyl -6- methylanilines）, 4,4 '-methylene-bis-（2,6-
Diisopropyl aniline）, DDS, 3,3 '-diaminodiphenylsulfone, benzidine, o- tolidines, m- ditolyls
Amine, TMB, 2,2 '-bis-（Trifluoromethyl）Benzidine, Isosorbide-5-Nitrae-bis-（4- amino-benzene oxygens）Benzene, 1,3-
It is double（4- amino-benzene oxygens）Benzene, 1,3- are double（3- amino-benzene oxygens）Benzene, double [4-（4- amino-benzene oxygens）Phenyl] sulfone, double [4-（3-
Amino-benzene oxygen）Phenyl] sulfone, 2,2 ,-bis- [4-（4- amino-benzene oxygens）Phenyl] double [4- of propane and 2,2-（3- aminobenzene oxygen
Base）Phenyl] propane；Aliphatic diamine, such as 1,6- hexamethylene diamines, Isosorbide-5-Nitrae-cyclohexanediamine, 1,3- cyclohexanediamine, Isosorbide-5-Nitrae-bis-（Ammonia first
Base）Hexamethylene, 1,3- are double（Aminomethyl）Hexamethylene, 4,4 '-diamino-dicyclohexyl methane, 4,4 '-diaminobenzene formailide,
2,2- double-[4-（4- amino-benzene oxygens）Phenyl] HFC-236fa, 1,3- be double（3- aminopropyls）It is tetramethyl disiloxane, double（p-
Amino-benzene oxygen）Dimethylsilane, hexamethylene diamine, diamino dodecane, 1,3- are double（4- amino-benzene oxygens）Double [the 4- of benzene, 2,2-（4-
Amino-benzene oxygen）Phenyl] propane, 1,1- be double（4- aminophenoxy phenyls）Hexamethylene, double [4-（4- amino-benzene oxygens）Phenyl]
Sulfone, 1,3- are double（3- amino-benzene oxygens）Benzene, 5- amino -1,3,3- trimethylcyclohexyls methylamine, 4,4 '-bis-（4- amino-benzene oxygens）
Biphenyl, 1,1- are double（4- aminophenyls）Hexamethylene, α, α '-bis-（4- aminophenyls）- Isosorbide-5-Nitrae-diisopropyl benzene, 1,3- are double（4- ammonia
Phenoxyl）- 2,2- dimethylpropane, 1,3- are double（4- amino-benzene oxygens）Benzene, 9,9- are double（4- aminophenyls）Fluorine and 4,4 '-two
Amino -3,3 '-dimethyidicyclohexyl-methane, combinations thereof etc..
In embodiment, positive photosensitive polyimide solvent can be organic solvent, and can include any suitable solvent,
Such as ketone, alcohol, polyalcohol, ether, glycol ether, cyclic ethers, aromatic hydrocarbons, ester, propionate, lactate, lactate, Asia
Alkylene glycol monoalkyl ether, alkyl lactate, alkyl alkoxy propionate, annular lactone, the monoketone chemical combination containing a ring
Thing, alkylene carbonate, alkyl alkoxy acetate, alkyl pyruvic acid, lactate, ethylene glycol alkyl ether acetate, diethylene glycol,
Propylene glycol alkyl ether acetic acid salt, aklylene glycol alkyl ether acetate, aklylene glycol monoalkyl ester etc..
Can be used as the solvent of negative photosensitive polyimides for negative photosensitive polyimide compositions material it is specific
Example include acetone, methanol, ethanol, toluene, dimethylbenzene, 4- hydroxy-4-methyl-2-pentanones, tetrahydrofuran, methyl ethyl ketone,
Cyclohexanone, methyl isoamyl ketone, 2-HEPTANONE, ethylene glycol, ethylene glycol acetate, ethylene glycol dimethyl ether, Ethylene Glycol Methyl ethyl
Ether, ethylene glycol monovinyl ether, methylcellosolve acetate（methyl celluslve acetate）, ethyl cellosolve acetic acid
Ester, diethylene glycol, diethylene glycol monoacetate, diethylene glycol monomethyl ether, diethylene glycol diethyl ether, diethylene glycol dimethyl
Ether, diethylene glycol ethyl methyl ether, TC, ethylene glycol monobutyl ether, 2 hydroxy propanoic acid ethyl ester, 2- hydroxyls-
2 Methylpropionic acid methyl esters, 2- hydroxy-2-methyls ethyl propionate, ethoxy ethyl acetate, hydroxyl ethyl acetate, 2 hydroxy-2-methyls
Methyl butyrate, 3- methoxy methyl propionates, 3- methoxypropionates, 3- ethoxypropanoates, 3- ethoxyl ethyl propionates,
Ethyl acetate, butyl acetate, methyl lactate and ethyl lactate, propane diols, Propylene glycol monoacetate, dihydroxypropane single-ether acetic acid
Ester, propylene glycol methyl ether acetate, propane diols list propyl methyl ether acetic acid esters, propylene glycol monobutyl ether acetic acid esters, propyleneglycol monobutyl
Ether acetic acid ester, propylene glycol monomethyl ether propionate, dihydroxypropane single-ether propionic ester, propylene glycol methyl ether acetate, propylene-glycol ethyl ether second
Acid esters, ethylene glycol monomethyl ether acetate, ethylene glycol monoethylether acetate, propylene glycol monomethyl ether, dihydroxypropane single-ether, propane diols list
Propyl ether, propylene glycol monobutyl ether, glycol monoethyl ether, ethylene glycol monoethyl ether, methyl lactate, ethyl lactate, propyl lactate and lactic acid
Butyl ester, 3- ethoxyl ethyl propionates, 3- methoxy methyl propionates, 3- ethoxypropanoates, 3- methoxypropionates, β-the third
Lactone, beta-butyrolactone, gamma-butyrolacton, Alpha-Methyl-gamma-butyrolacton, Beta-methyl-gamma-butyrolacton, gamma-valerolactone, γ-oneself in
Ester, γ-octalactone, Alpha-hydroxy-gamma-butyrolacton, 2- butanone, 3- espeletons, pinacolone, 2 pentanone, propione, 4- methyl-
2 pentanone, 2- methyl-propione, 4,4- dimethyl-2-pentanones, 2,4- dimethyl-propione, 2,2,4,4- tetramethyl -3- penta
Ketone, methyl-n-butyl ketone, 3- hexanones, 5- methyl -3- hexanones, 2-HEPTANONE, 3- heptanone, 4- heptanone, 2- methyl -3- heptanone, 5- methyl -3- heptan
Ketone, the heptanone of 2,6- dimethyl -4, methyln-hexyl ketone, 3- octanones, methyl n-heptyl ketone, 3- nonanones, butyl ketone, 2- decanones, 3- decanones, 4- decanones,
5- hexene -2- ketone, 3- amylene -2- ketone, cyclopentanone, 2- methyl-cyclopentanones, 3- methyl-cyclopentanones, 2,2- cyclopentanone dimethyls, 2,
4,4- trimethyl cyclopentanone, cyclohexanone, 3- methyl cyclohexanones, 4- methyl cyclohexanones, 4- ethyl cyclohexanones, 2,2- dimethyleyelohexanes
Ketone, 2,6- dimethylcyclohexanons, 2,2,6- trimethylcyclohexanones, cycloheptanone, 2- methyl cycloheptanone, 3- methyl cycloheptanone, carbonic acid
Propylene, vinylene carbonate, ethylene carbonate and butylene, acetic acid -2-methoxy-ethyl ester, acetic acid -2- ethyoxyl second
Ester, acetic acid -2-（2- ethoxy ethoxies）Ethyl ester, acetic acid -3- methoxyl group -3- methyl butyls ester, acetic acid -1- methoxyl groups -2- third
Ester, DPG, monomethyl ether, single ethylether, single propyl ether, single-butyl ether, single phenyl ether, dipropylene glycol monoacetate, two
Oxane, methyl lactate, ethyl lactate, methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, acetone
Propyl propionate, methoxy methyl propionate, ethoxyl ethyl propionate, 1-METHYLPYRROLIDONE（NMP）, 2- methoxy ethyl ethers（Two is sweet
Diethylene glycol dimethyl ether）, ethylene glycol monomethyl ether, propylene glycol monomethyl ether；Ethyl lactate or methyl lactate, methyl propionate, ethyl propionate
With ethoxyl ethyl propionate, methyl ethyl ketone, cyclohexanone, 2-HEPTANONE, carbon dioxide, cyclopentanone, cyclohexanone, 3- ethoxy-propionic acids
Ethyl ester, ethyl lactate, propylene glycol methyl ether acetate（PGMEA）, methylene cellosolve, butyl acetate and cellosolvo, N-
NMF, DMF, N- methyl formyl anilines, N- methylacetamides, DMA, N- first
Base pyrrolidones, dimethyl sulfoxide (DMSO), benzylisoeugenol, two hexyl ethers, acetonyl acetone, isophorone, caproic acid, octanoic acid, 1- octanols,
1 nonyl alcohol, benzylalcohol, benzyl acetate, ethyl benzoate, diethy-aceto oxalate, diethyl maleate, gamma-butyrolacton, ethylene carbonate,
Propene carbonate, ethylene glycol monophenyl ether acetic acid esters（phenyl cellosolve acetate）Deng.
In embodiment, positive photosensitive polyimide resin and PAC are set into negative photosensitive polyimide solvent, and
Its mixing is set to form positive photosensitive polyimide compositions.For example, the concentration of positive photosensitive polyimide resin can be between
Between about 5% and about 50%, such as about 25% concentration, and PAC concentration can between about 0.1% and about 20%, such as about 5%
Concentration.Once the whole mixture that positive photosensitive polyimide compositions are mixed into has constant composition, then by eurymeric light
Quick polyimide compositions are coated on the second passivation layer 109 and make its thickness between about 1 μm and about 40 μm.For example, can
To implement coating operation using spin coating method, but it can also alternatively use any suitable method.
Fig. 4 shows patterning and the development of the 3rd passivation layer 301.In embodiment, the 3rd passivation layer 301 can be entered
Row patterns to form the second opening 401 and the 3rd opening 403.Second opening 401 can be in first in the second passivation layer 109
The first opening 217 that the top of opening 217 is formed and attached in the second passivation layer 109 is to expose the part of contact pad 105.
The 3rd opening 403 can be formed with the size in the path for limiting the wire that will be formed in the 3rd passivation layer 301.
In order to pattern the 3rd passivation layer 301, the passivation layer 301 of substrate 101 and the 3rd can be arranged on image device 200
（With reference to Fig. 2A above description）Interior or different image device（It is not shown）It is interior, and the 3rd passivation layer 301 can be exposed to pattern
Change under energy source 215 to limit the region in the 3rd passivation layer 301 for the second opening 401 and the 3rd opening 403.In embodiment
In, the width of the second opening 401 and the 3rd opening 403 can be all as between about 5 μm of peace treaties between about 2 μm and 300 μm
Between 300 μm.In addition, the second opening 401 and the 3rd opening 403 can be any phases of circle, ellipse, polygon etc.
Hope shape.
Once exposure, then developed using the second developer to the 3rd passivation layer 301.In embodiment, the second development
Agent can be that alkaline aqueous solution is changed with removing the part in the second passivation layer 109 exposed to patterning energy 215, and passing through
Learning reaction makes their dissolubility be improved and changed.These alkaline aqueous solutions may include TMAH（TMAH）、
TBAH, sodium hydroxide, potassium hydroxide, sodium carbonate, sodium acid carbonate, sodium metasilicate, sodium metasilicate, ammoniacal liquor, monomethyl amine,
Dimethylamine, trimethylamine, monoethyl amine, diethylamine, triethylamine, Mono Isopropylamine, diisopropylamine, tri-isopropyl amine, monobutylamine (MBA), dibutyl amine,
Monoethanolamine, diethanol amine, triethanolamine, dimethylamino-ethanol, diethylaminoethanol, ammonia, caustic soda, caustic potash, metasilicic acid
Sodium, potassium metasilicate, sodium carbonate, tetraethyl ammonium hydroxide, combinations thereof etc..
It can use the method for such as spin coating that the second developer is coated on the 3rd passivation layer 301.In this process,
When semiconductor devices 100（With the 3rd passivation layer 301）During rotation, second developer is coated on from the top of the 3rd passivation layer 301
On 3rd passivation layer 301.In embodiment, the temperature of the second developer is between about 10 DEG C and about 80 DEG C, such as about 50 DEG C,
And between developing time can just last about 1 minute to about 60 minutes, such as about 30 minutes.
Fig. 5 is shown after patterning and developing the 3rd passivation layer 301, and the 3rd passivation layer 301 and second can be passivated
Layer 109 is solidified（501 are expressed as in Figure 5 by wave）., can be by by substrate 101 and second in embodiment
The passivation layer 301 of passivation layer 109 and the 3rd is arranged on such as heating plate or other kinds of heater to implement to solidify work
Skill 501, wherein it is possible to increase the temperature of the second passivation layer 109 and the 3rd passivation layer 301.In embodiment, implement curing process
Temperature between about 150 DEG C to about 400 DEG C, and curing process time between about 1 hour to about 2 hours.
In addition, after the curing process, scum silica frost can be used to remove technique to remove in patterning, development and curing process
May be retained in afterwards contact pad 105, the second passivation layer 109 and the undesirable residue on the 3rd passivation layer 301 or
Grain.In embodiment, scum silica frost, which removes technique, to be included exposing contact pad 105, the second passivation layer 109 and the 3rd passivation layer 301
In the plasma environment of such as oxygen plasma environment, to react away and remove any undesirable residue.Specific
Embodiment in, scum silica frost remove technique can be reactive ion etching process.
Fig. 6 shows the formation of crystal seed layer 601.Once form the second passivation layer 109 and the 3rd passivation layer 301, then can be with
Crystal seed layer 601 is being formed in the first opening 217, second opening 401 and the 3rd opening 403.In embodiment, crystal seed layer
601 can be such as CTB alloy, but can also alternatively use any suitable material of such as copper.Can be by such as
CVD or the suitable formation process of sputtering formation crystal seed layer 601.
Fig. 7 shows the formation of the conductive material 701 on crystal seed layer 601, fills and crosses and fills the first opening 217, second
The opening 403 of opening 401 and the 3rd.In embodiment, conductive material 701 can include copper, but can also be alternatively using all
Such as AlCu or Au other suitable materials.Can by such as electroplate or electroless depositing operation formation conductive material 701,
But can also alternatively use such as CVD or PVD other method.
Fig. 8 is shown for being removed from the perimeter of first opening the 217, second opening 401 and the 3rd opening 403
Such as chemically mechanical polishing of excessive conductive material 701（CMP）The flatening process and formation PPI803 of technique.Implementing
In example, flatening process is CMP, sets the combination of etching material and grinding-material to be in contact with conductive material 701, and using grinding
Mill pad 801 grinds away conductive material 701 until conductive material 701 is concordant with the 3rd passivation layer 301.
After flatening process, PPI803 and the 3rd passivation layer 301 can be cleaned to remove after flatening process
Any undesirable residue of residual., can be by using deionized water rinsing PPI803 and the 3rd passivation layer in embodiment
301 clean PPI803 and passivation layer 301.Alternatively, standard cleaning -1 can be used（Standard Clean-1）（SC-1）or
A standard cleanings -2（Standard Clean-2）（SC-2）Cleaning.All these cleanings are entirely included in implementation
In the range of example.
Once having cleaned after PPI803 and the 3rd passivation layer 301, then PPI803 and the 3rd passivation layer 301 can be dried
Roasting.In embodiment, by the way that substrate 101 and PPI803 and the 3rd passivation layer 301 are arranged on into smelting furnace or other heater elements
（For example, heating plate）It is interior and increase to the temperature of the 3rd passivation layer 301 and PPI803 between about 150 DEG C and about 450 DEG C（Such as
About 200 DEG C）To be bakeed to PPI803 and the 3rd passivation layer 301.Can to PPI803 and the 3rd passivation layer 301 baking time
With between 5 minutes（min）To between 240 minutes（Such as about 60 minutes）.
By forming PPI803 as described herein, it is possible to reduce or eliminate around PPI803 formation the problem of.Particularly,
By using these embodiments, it can avoid for tiny spacing（For example, less than about 5 μm）Crystal seed layer and covering electrodeposited coating
Between the undercutting problem that generally occurs, while also reducing cost and avoiding the loss of any critical dimension.In addition, at this
In a little embodiments, crystal seed layer 601 is distributed also along PPI803 side wall, and inclined in the absence of the depth related to these embodiments
Difference.Finally, in these embodiments, PPI803 has angle circle contour, without summit problem present in other techniques.
Fig. 9 shows the arrangement of external contacts 901 and cushion 903.In embodiment, external contacts 901 can be with
Include the material of such as tin, or such as silver, other suitable materials without slicker solder or copper.In embodiment, external contacts
901 be tin solder projection, passes through the common method shape first by evaporation, plating, printing, solder transfer, ball layout etc.
External contacts 901 are formed into thickness is about 100 μm of tin layers.Once tin layers are formed in structure, it is possible to implement backflow
（reflow）To form the material into as desired institute's projection shape.
Once configured outer metal 901 and having been flowed back to it, then it can be set on the 3rd passivation layer 301
Or formation cushion 903 sweeps away Rotating fields to protect to ease up.In embodiment, cushion 903 is heavy using such as chemical vapor
The techniques such as product, PVD, spin coating, set according at least a portion on selected exact material or are formed such as
The dielectric passivation material of silica, polyimides etc..The thickness of the cushion 903 of formation can be between about 5 μm and about 200 μm
Between, such as 100 μm.
According to embodiment, there is provided the semiconductor devices for including the patterning positive type photosensitive material above substrate.Figure
Case positive type photosensitive material includes opening.Crystal seed layer is along opening, and conductive material is adjacent to crystal seed layer.
According to another embodiment, there is provided include half of the patterning negative photosensitive polyimide layer above substrate
Conductor device.Patterning positive photosensitive polyimide layer is located above patterning negative photosensitive polyimide layer and is in contact with it,
Patterning positive photosensitive polyimide layer includes at least one opening.
According to another embodiment there is provided a kind of method for manufacturing semiconductor devices, this method includes photosensitive by first
Material is arranged on above the conductive region above substrate.The first light-sensitive material is patterned to remove unexposed first light-sensitive material
And exposure conductive region.Second light-sensitive material is arranged on above the first light-sensitive material.The second light-sensitive material is patterned to remove
Exposure the second light-sensitive material simultaneously exposure conductive region, patterning the second light-sensitive material form patterning the second light-sensitive material and
At least one opening in the second light-sensitive material of patterning.Along the side wall formation crystal seed layer of at least one opening.
While embodiments of the invention have been described in detail and its advantage, it is to be understood that can be without departing substantially from institute
In the case of the spirit and scope for the embodiment that attached claim is limited, various change, substitutions and modifications are carried out.For example, can be with
Change the exact shape of the first opening, the second opening and the 3rd opening, or definite forming method can be changed, can make in addition
With the mask of any suitable number for tube core, such as, two masks, three masks, four masks or any other is suitable
The mask of quantity.
In addition, scope of the present application is not intended to be limited to technique, installations, manufacture, material group described in this specification
Into in, the specific embodiment of instrument, method and steps.Those skilled in the art is easy to reason from disclosure of the invention
Solution, according to the present invention, the usable function substantially the same to corresponding embodiment execution of the present invention or acquirement are substantial
Identical result current existing or from now on by the technique being developed, installations, manufacture, material composition, instrument, method or step
Suddenly.Therefore, appended claims are intended to include these techniques, installations, manufacture, material composition, instrument, method or step
In the range of them.
Claims (19)
1. a kind of semiconductor devices, including：
Positive type photosensitive material is patterned, above substrate, the patterning positive type photosensitive material includes the second opening and the 3rd
Opening；
Negative type photosensitive material is patterned, between the substrate and the patterning positive type photosensitive material, the patterning is negative
Type light-sensitive material includes the first opening, and second opening is located at the surface of the described first opening and is connected to described the
One opening, the patterning negative type photosensitive material continuously extends through the underface of whole 3rd opening；
Crystal seed layer, along the described first opening, second opening and the 3rd opening；And
Conductive material, the neighbouring crystal seed layer, conductive material filling first opening, second opening and described the
The remainder of three openings.
2. semiconductor devices according to claim 1, wherein, the patterning negative type photosensitive material is poly- including negative photosensitive
Acid imide material.
3. semiconductor devices according to claim 1, wherein, the patterning positive type photosensitive material is poly- including positive photosensitive
Acid imide material.
4. semiconductor devices according to claim 1, wherein, the conductive material formation post-passivation cross tie part, wherein, institute
Post-passivation cross tie part is stated to further comprise：
Contact area；And
Wiring, it is laterally spaced-apart with the contact area.
5. semiconductor devices according to claim 4, wherein, the post-passivation cross tie part has the spacing less than 5 μm.
6. semiconductor devices according to claim 1, wherein, the conductive material is copper.
7. a kind of semiconductor devices, including：
Negative photosensitive polyimide layer is patterned, above the substrate, the patterning negative photosensitive polyimide layer includes the
One opening；And
Pattern positive photosensitive polyimide layer, above the patterning negative photosensitive polyimide layer and with the pattern
Change negative photosensitive polyimide layer to be in contact, the patterning positive photosensitive polyimide layer includes the second opening and the 3rd and opened
Mouthful, and second opening is positioned at the surface of the described first opening and is connected to first opening, the patterning is negative
Type light-sensitive polyimide layer continuously extends through the underface of whole 3rd opening.
8. semiconductor devices according to claim 7, further comprises：
Crystal seed layer, the side wall along the described first opening, second opening and the 3rd opening extends；And
Conductive material, fills the remainder of first opening, second opening and the 3rd opening.
9. semiconductor devices according to claim 8, wherein, the conductive material formation post-passivation cross tie part, wherein, institute
Post-passivation cross tie part is stated to further comprise：
Contact area；And
Wiring, it is laterally spaced-apart with the contact area.
10. semiconductor devices according to claim 9, wherein, the post-passivation cross tie part has the spacing less than 5 μm.
11. semiconductor devices according to claim 8, wherein, the conductive material is copper.
12. a kind of method for manufacturing semiconductor devices, methods described includes：
First light-sensitive material is arranged on above the conductive region above substrate；
First light-sensitive material is patterned, to remove unexposed first light-sensitive material to form the first opening and exposure is described
Conductive region, first light-sensitive material is negative type photosensitive material；
Second light-sensitive material is arranged on above first light-sensitive material, second light-sensitive material is positive type photosensitive material；
Second light-sensitive material is patterned, to remove the second light-sensitive material and the exposure conductive region, patterning of exposure
Second light-sensitive material of second light-sensitive material formation patterning and the in the second light-sensitive material of the patterning
Two openings and the 3rd opening, wherein, second opening is located at the surface of the described first opening and is connected to described first
Opening, first light-sensitive material continuously extends through the underface of whole 3rd opening；And
Along the side wall formation crystal seed layer of the described first opening, second opening and the 3rd opening.
13. method according to claim 12, wherein, first light-sensitive material is negative photosensitive polyimides.
14. method according to claim 13, wherein, second light-sensitive material is positive photosensitive polyimides.
15. method according to claim 14, wherein, pattern first light-sensitive material and further comprise：
First light-sensitive material is exposed to patterning energy source；And
After first light-sensitive material is exposed, first light-sensitive material is developed.
16. method according to claim 15, wherein, first light-sensitive material development is further comprised：Coating the
One alkaline developer.
17. method according to claim 15, wherein, pattern second light-sensitive material and further comprise：
Second light-sensitive material is exposed to patterning energy source；And
After first light-sensitive material is exposed, second light-sensitive material is developed.
18. method according to claim 17, wherein, second light-sensitive material development is further comprised：Coating the
Two alkaline developers.
19. method according to claim 12, further comprises：
Conductive material is plated on the crystal seed layer；And
The conductive material is planarized using the second light-sensitive material of patterning.
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| US201361789593P | 2013-03-15 | 2013-03-15 | |
| US61/789,593 | 2013-03-15 | ||
| US13/929,641 | 2013-06-27 | ||
| US13/929,641 US9117881B2 (en) | 2013-03-15 | 2013-06-27 | Conductive line system and process |
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| CN104051380A CN104051380A (en) | 2014-09-17 |
| CN104051380B true CN104051380B (en) | 2017-08-15 |
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