CN104050464B - Manufacture method, fingerprint Identification sensor and the electronic device of fingerprint Identification sensor - Google Patents
Manufacture method, fingerprint Identification sensor and the electronic device of fingerprint Identification sensor Download PDFInfo
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- CN104050464B CN104050464B CN201410313081.0A CN201410313081A CN104050464B CN 104050464 B CN104050464 B CN 104050464B CN 201410313081 A CN201410313081 A CN 201410313081A CN 104050464 B CN104050464 B CN 104050464B
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Abstract
This application involves method, fingerprint Identification sensor and the electronic device of manufacture fingerprint Identification sensor.A kind of method for manufacturing fingerprint Identification sensor includes：Prepare substrate；Embossed layer is formed on the substrate；Multiple grooves are formed in the embossed layer；Conductive material is filled in the multiple groove, fingerprint detection element is formed, wherein the fingerprint detection element includes：Induction electrode；A plurality of driving electrodes, a plurality of driving electrodes are arranged in parallel and are spaced apart from each other, and a plurality of driving electrodes are opposite to define multiple detector gaps at interval with the induction electrode respectively, wherein, multiple grooves are formed in the embossed layer to be included：Adjust the depth of the multiple groove so that when detector gap of the fingerprint ridge between one of induction electrode and multiple driving electrodes, the rate of change of capacitance between one of induction electrode and the plurality of driving electrodes is 30% to 80%.
Description
Technical field
This disclosure relates to fingerprint Identification sensor, method, fingerprint in particular to manufacture fingerprint Identification sensor are known
Individual sensor and electronic device.
Background technology
The some biological characteristics of human body (such as finger print/palm print) are the unique features of human body, and their complexity energy
Enough enough feature quantities provided for differentiating.
The identification technologies such as finger print/palm print fingerprint are biometrics identification technologies most ripe and cheap at present.Fingerprint
Identification technology is widely used.We are not only it can be seen that the figure of fingerprint identification technology, city in gate inhibition, attendance checking system
There is the application of more fingerprint recognitions on field：As laptop, mobile phone, automobile, bank paying all can employing fingerprint identify
Technology.In particular with the continuous development of smart mobile phone, will appear from largely such as utilizing fingerprint with the relevant demand of fingerprint recognition
Identification unlock mobile phone, protection privacy information, ensure transaction security etc..
Sensor for fingerprint recognition includes resistance sensor, optical sensor and capacitance type sensor etc..
Capacitance type fingerprint identification sensor is typically formed on monocrystalline silicon substrate, therefore is existed when finger force presses
Generation splintering problem.In order to solve the problems, such as silicon chip receive user press many times or it is improper pressing and it is flimsy, now determine
The silicon substrate of the general sapphire protection fingerprint sensor higher using hardness.But sapphire cost is higher, cause entirely to refer to
Line identifying system cost is higher.Generally formed using the fingerprint sensor of silicon substrate by cmos semiconductor technique, this method work
Skill is complicated, causes the capacitance type fingerprint identification sensor production cost based on silicon substrate expensive.
Manufacture fingerprint Identification sensor needs to form certain amount sensing unit for example on silicon substrate in base material.If sensing is single
The lazy weight of member, then the resolution ratio of fingerprint recognition is low, this will lead to not accurately carry out fingerprint recognition or need user more
It is secondary to input fingerprint and make user experience poor.In addition, the base material area of fingerprint Identification sensor is relatively limited.In limited areal
The fingerprint sensor for forming high-resolution is also a technological challenge.
Some fingerprinting schemes, such as a scheme of Apple Inc., also need one drive ring of increase.This drive ring
On the one hand it is used to provide electric field to user's finger, is on the other hand used to be electromagnetically shielded to prevent external electromagnetic field from producing fingerprint recognition
Raw interference.This causes whole fingerprint recognition component complicated, increases cost.
Need a kind of formation sufficient amount sensing unit on limited areal base material or further improve fingerprint recognition
The scheme of resolution ratio.
Above- mentioned information is only used for strengthening the understanding to the background of the disclosure, therefore it disclosed in the background section
It can include not forming the information to the prior art known to persons of ordinary skill in the art.
The content of the invention
A kind of fingerprint Identification sensor of disclosure and the electronic device including the fingerprint Identification sensor, can reduce
Cost, and sufficient amount driving electrodes can be formed on limited areal base material to improve fingerprint recognition resolution ratio.
Other characteristics and advantage of the disclosure will be apparent from by following detailed description, or partially by the disclosure
Practice and acquistion.
According to one aspect of the disclosure, a kind of method for manufacturing fingerprint Identification sensor includes：Prepare substrate；Described
Embossed layer is formed in substrate；Multiple grooves are formed in the embossed layer；Conductive material is filled in the multiple groove, is formed
Fingerprint detection element, wherein the fingerprint detection element includes：Induction electrode；A plurality of driving electrodes, a plurality of driving electrodes
It is arranged in parallel and is spaced apart from each other, a plurality of driving electrodes is opposite multiple to define at interval with the induction electrode respectively
Detector gap, wherein, multiple grooves are formed in the embossed layer to be included：Adjust the depth of the multiple groove so that work as finger
During detector gap of the wrinkle ridge between one of induction electrode and multiple driving electrodes, induction electrode and the plurality of driving electrodes it
Rate of change of capacitance between one is 30% to 80%.
According to some embodiments, the pitch between adjacent driven electrode is equal to each other and in 50-60 μ m, driving electricity
The width of pole is equal to each other and in 20-45 μ m, and the size of detector gap is equal to each other and in 20-40 μ ms.
According to some embodiments, substrate is strengthened glass, tempered glass, ceramics, sapphire, PET film or FPC substrates.
According to some embodiments, embossed layer is ultraviolet-curing resin, hot-setting adhesive, light binding or from dry glue.
According to another aspect of the present disclosure, a kind of fingerprint Identification sensor includes：Substrate；Form pressure on the substrate
Layer is printed, the coining layer surface is provided with multiple grooves；And fingerprint detection element, it is placed in the multiple groove；Wherein institute
Stating fingerprint detection element includes：Induction electrode；A plurality of driving electrodes, a plurality of driving electrodes are arranged in parallel and are spaced
Open, a plurality of driving electrodes are opposite to define multiple detector gaps at interval with the induction electrode respectively, wherein described
Multiple grooves have a depth t, and the thickness of the induction electrode and a plurality of driving electrodes is defined by the depth t, described
Multiple grooves are configured so that when detector gap of the fingerprint ridge between one of induction electrode and multiple driving electrodes, sensing
Rate of change of capacitance between one of electrode and the plurality of driving electrodes is 30% to 80%.
According to some embodiments, the pitch between adjacent driven electrode is equal to each other and in 50-60 μ m, driving electricity
The width of pole is equal to each other and in 20-45 μ m, and the size of detector gap is equal to each other and in 20-40 μ ms.
According to some embodiments, the substrate is strengthened glass, tempered glass, ceramics, sapphire, PET film or FPC bases
Bottom.
According to some embodiments, the embossed layer is ultraviolet-curing resin, hot-setting adhesive, light binding or from dry glue.
According to some embodiments, the fingerprint detection element further includes reference electrode and a plurality of illusory driving electrodes, described
Reference electrode is abreast oppositely arranged with the induction electrode and positioned at the induction electrode and a plurality of driving electrodes phase
Anti- side, a plurality of illusory driving electrodes parallel arrangement and is electrically connected to each other, a plurality of illusory driving electrodes with it is described
A plurality of driving electrodes are arranged in correspondence with the side opposite with the induction electrode of the reference electrode.
According to some embodiments, the fingerprint detection element includes metallic particles, graphene, carbon nanotubes or conductive polymer
Sub- material.
According to some embodiments, the fingerprint detection element includes conductive grid.
According to another aspect of the present disclosure, a kind of electronic device includes foregoing any one of them fingerprint recognition such as and senses
Device.
According to some embodiments, the electronic device includes viewing area and non-display area, the fingerprint Identification sensor position
In the viewing area.
According to some embodiments, the electronic device includes viewing area and non-display area, the fingerprint Identification sensor position
In the non-display area.
According to some embodiments of the disclosure, electrode and lead are formed on non-silicon-based bottom by using embossed layer, can
To improve the reliability of sensor, and the fingerprint sensor of high-resolution can be formed in limited areal at lower cost.Root
According to some embodiments of the disclosure, by adjusting the depth t of groove, it is possible to achieve adjust the purpose of rate of change of capacitance, reach
More preferable fingerprint detection effect.
Brief description of the drawings
Its example embodiment is described in detail by referring to accompanying drawing, the above and other feature and advantage of the disclosure will become
It is more obvious.
Fig. 1 schematically shows the fundamental diagram of capacitance type fingerprint detecting element；
Fig. 2 schematically shows the structure chart of the swiping formula fingerprint Identification sensor according to one example embodiment of the disclosure；
Fig. 3 schematically shows the sectional view obtained along the AA ' lines of Fig. 1；
Fig. 4 schematically shows the sectional view obtained along the BB ' lines of Fig. 1；
Fig. 5 schematically shows the conductive grid available for fingerprint detection element；
Fig. 6 schematically shows the structure chart of the swiping formula fingerprint Identification sensor according to one example embodiment of the disclosure；
Fig. 7 shows a plurality of wire fingerprint image obtained when finger when swiping moves above fingerprint Identification sensor；
Fig. 8 shows the complete finger print image that a plurality of wire fingerprint pattern pieces together；
Fig. 9 schematically shows the structure diagram of the fingerprint detection element according to one example embodiment of the disclosure；
Figure 10 schematically shows the structure diagram of the fingerprint detection element according to one example embodiment of the disclosure；And
Figure 11 schematically shows the electronic device according to one example embodiment of the disclosure.
Embodiment
Example embodiment is described more fully with referring now to attached drawing.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to embodiment set forth herein；On the contrary, these embodiments are provided so that the disclosure will
Fully and completely, and by the design of example embodiment comprehensively it is communicated to those skilled in the art.In figure, in order to clear
It is clear, exaggerate the thickness of region and layer.Identical reference numeral represents same or similar part in figure, thus will omit it
Detailed description.
In addition, described feature, structure or characteristic can be incorporated in one or more implementations in any suitable manner
In example.In the following description, there is provided many details fully understand embodiment of the disclosure so as to provide.However,
It will be appreciated by persons skilled in the art that the technical solution of the disclosure can be put into practice without one in the specific detail or more
It is more, or other methods, constituent element, material etc. can be used.In other cases, be not shown in detail or describe known features,
Material or operation to avoid the fuzzy disclosure each side.
The disclosure provides a kind of fingerprint Identification sensor and the electronic device including the fingerprint Identification sensor, can reduce
Cost, and sufficient amount driving electrodes can be formed on limited areal base material to improve fingerprint recognition resolution ratio.
Fig. 1 schematically shows the fundamental diagram of capacitance type fingerprint detecting element.
As shown in Figure 1, capacitance type fingerprint detecting element includes fingerprint identification unit, and cover with protective layer 117.Protective layer
117 are used to protect fingerprint detection element.Protective layer can be such as diamond-like-carbon, silica or UV glue.Protective layer can lead to
Cross spraying technology or printing technology is formed.Fingerprint identification unit may include induction electrode 101 and driving electrodes 103, therebetween
With a detector gap 107.Fingerprint identification unit is multiple, and can arrange single file or multirow, only shows that a fingerprint is known in figure
Other unit.The induction electrode 101 and driving electrodes 103 of fingerprint identification unit may make up a basic capacitor.
When finger 190 presses above fingerprint identification unit or during swiping, between induction electrode 101 and driving electrodes 103
Capacitive coupling can be located at the top of detector gap 107 according to fingerprint ridge 192 or fingerprint valley 194 and have different changes.This be because
Dielectric constant for fingerprint ridge is typically 10 to 20 times of air (fingerprint valley).Therefore, fingerprint identification unit compares under fingerprint ridge
There is bigger equivalent capacity under fingerprint valley.By detecting the capacitance variations (or voltage change thereon) of fingerprint identification unit,
It can be determined that above the unit be fingerprint ridge or fingerprint valley, so as to obtain fingerprint image.
Fig. 2 schematically shows the structure chart of the swiping formula fingerprint Identification sensor according to one example embodiment of the disclosure.
Fig. 3 shows the sectional view obtained along the AA ' lines of Fig. 2.Fig. 4 shows the sectional view obtained along the BB ' lines of Fig. 2.
As in Figure 2-4, fingerprint Identification sensor 100 include substrate 111, the embossed layer 113 that is formed in substrate 111 with
And it is formed in the fingerprint detection element 110 in embossed layer 113.113 surface of embossed layer is provided with multiple grooves 115, fingerprint detection
Element 110 is placed in groove 115.According to example embodiment, fingerprint detection element 110 can be filled up completely groove 115, that is, refer to
The upper surface of line detecting element 110 is concordant with the upper surface of embossed layer 113, and but the present disclosure is not limited thereto.
As shown in Fig. 2, fingerprint detection element 110 includes induction electrode 101 and a plurality of driving opposite with induction electrode 101
Electrode 103.A plurality of driving electrodes 103 can be arranged in parallel and be spaced apart from each other.Induction electrode 101 can be with a plurality of driving electrodes 103
It is substantially vertical.A plurality of driving electrodes 103 are spaced apart with induction electrode 101 so as to define multiple detector gaps 107 respectively.Every drive
Moving electrode 103 may make up a fingerprint identification unit with induction electrode 101, so that induction electrode 101 and a plurality of 103 structure of driving electrodes
Into multiple fingerprint identification units.
Pitch d between adjacent driven electrode 103 can be equal to each other.The width w1 of driving electrodes 103 can be equal to each other.Sense
Answering the width w2 of electrode 101 can be equal to each other with the width w1 of driving electrodes 103.The big I of detector gap 107 is equal to each other.
But the disclosure is not limited.
As shown in Figures 3 and 4, the pitch d between adjacent driven electrode 103 for example can be in 40-60 μ ms.Driving electrodes
103 width w1 for example can be in 20-45 μ ms.The width g of detector gap 107 for example can be in 20-40 μ ms.Detection
The width g in gap 107 can be equal to each other.The width w2 of induction electrode 101 for example can be in 50-60 μ ms.
According to an embodiment, the pitch d between adjacent driven electrode 103 is 50 μm, and the identification for realizing 508PPI is differentiated
Rate.
Substrate 111 can be strengthened glass, tempered glass, ceramics, sapphire, or PET, PMMA, PC etc..Substrate 111
Can also be flexible printed circuit board (FPC) substrate, such as BT, FR4, FR5.
Embossed layer 113 may be, for example, as ultraviolet-curing resin, hot-setting adhesive, light binding or from dry glue.
The material of induction electrode 101 and driving electrodes 103 may be the same or different.Form induction electrode 101 and drive
The material of moving electrode 103 may be selected from the one or two of ITO (tin indium oxide) or metal simple-substance particle such as gold, silver, copper, zinc, aluminium
The above, metal alloy conductive material, graphene, carbon nano-tube material, nanometer conductive material such as nano silver etc., but the disclosure is unlimited
In this.
According to an example embodiment, induction electrode 101 and driving electrodes 103 may include conductive grid 105, such as Fig. 5 institutes
Show.At this moment, groove 115 has and 105 corresponding structure of conductive grid.Using conductive grid, cost is reduced, when still can reach
The good result of fingerprint recognition.
As it was previously stated, the change of the capacitance between fingerprint detection and induction electrode and driving electrodes is related.More specifically,
Change rate Δ C%=the Δ C/C, wherein C of capacitance between induction electrode and driving electrodes are induction electrode and single driving
Capacitance between electrode, capacitance when Δ C is the detector gap that fingerprint ridge is located between induction electrode and the single driving electrodes
Change, Δ C% is rate of change of capacitance.
Inventor has found, by adjusting rate of change of capacitance so that rate of change of capacitance Δ C% for 30% to 80% it is available compared with
Good fingerprint detection effect.
Since the dielectric constant of each personal fingerprint ridge is different, the dielectric of the fingerprint ridge of the different fingers of phase same person
Constant also has difference, therefore is set for identical induction electrode and driving electrodes, and capacitance variations have a distribution.It can lead to
Cross and randomly select some people's progress normal use tests, the test result to ensure such as more than 80% meets rate of change of capacitance Δ
C% is 30% to 80%.When rate of change of capacitance Δ C% involved in the disclosure is 30% to 80%, refer both to randomly select some people
In the case of carrying out normal use test, more than 80% test result meets that rate of change of capacitance Δ C% is 30% to 80%.
It can be readily appreciated that in the case where recognition resolution determines, the capacitance between induction electrode and driving electrodes mainly takes
Certainly in the thickness of electrode.However, existing method for making its electrode is mainly semiconductor technology or sputtering process, the thickness tune of electrode
Section is limited be subject to technique.Inventor does not have found to exist in conventional method realizes capacitance variations by adjusting the thickness of electrode
The scheme of rate adjustment.
According to the method for the making fingerprint Identification sensor of disclosure embodiment, embossed layer is formed on non-silicon-based bottom
113, groove 115 is then formed in embossed layer 113.Electrode pattern is formed by filling conductive material in groove 115.Pass through
Adjust the depth t of groove 115, it is possible to achieve adjust the purpose of rate of change of capacitance, reach more preferable fingerprint detection effect.Groove
115 depth t for example can be in 20nm-10 μ ms.
According to some embodiments, fingerprint Identification sensor 100 may also include lead (not shown), with fingerprint detection element
110 connections, for fingerprint detection element 110 to be connected to external circuit, such as fingerprint recognition circuit 109.Lead can also house
In groove, and there can be the material identical with induction electrode 101 and driving electrodes 103.Lead may also comprise conductive grid.
Fingerprint recognition circuit 109 can sequentially provide drive signal to driving electrodes 103, and can be examined by induction electrode 101
Inductive signal is surveyed, so as to identify fingerprint.But the present disclosure is not limited thereto.
According to the fingerprint Identification sensor of disclosure embodiment, electrode is formed on non-silicon-based bottom by using embossed layer
And lead, the reliability of sensor can be improved, and the fingerprint of high-resolution can be formed in limited areal at lower cost
Sensor.
When finger is pressed against the fingerprint Identification sensor top with structure as shown in Figure 2, know from the multiple fingerprint
Other unit can obtain the wire fingerprint image of a reflection fingerprint ridge and fingerprint valley.When finger is slided above fingerprint Identification sensor
When wiping mobile, a plurality of wire fingerprint image can be obtained, as shown in Figure 6.The a plurality of wire fingerprint pattern capable assembling is complete into one
Whole fingerprint image, as shown in Figure 7.
The manufacture method of fingerprint Identification sensor according to disclosure embodiment is described below.
First, substrate 111, such as PET base are prepared.Then, embossed layer 113 can be formed in substrate 111.Embossed layer
113 can be ultraviolet-curing resin, hot-setting adhesive, light binding or from dry glue etc..Then, in table of the embossed layer 113 away from substrate 111
Groove 115 is formed by imprint process on face.Groove 115 can be for example latticed according to being actually needed.
Then, doctor blade technique can be used to fill such as silver ink in groove 115, and under the conditions of about 150 DEG C
Baking sintering, makes the silver-colored simple substance in silver ink sinter conducting electrode patterns into, so as to form induction electrode 101 and driving electricity
Pole 103, and lead is formed as needed.According to an embodiment, silver ink water solid content about 35%, solvent volatilizees in sintering.
Fig. 8 schematically shows the structure diagram of the fingerprint detection element according to another example embodiment of the disclosure.
As shown in figure 8, fingerprint detection element 210 according to the present embodiment and the fingerprint detection element 110 shown in Fig. 2
Difference lies in fingerprint detection element 210 to further include reference electrode 101 ' and illusory driving electrodes 103 '.
Reference electrode 101 ' can be abreast oppositely arranged with induction electrode 101, and positioned at induction electrode 101 and a plurality of drive
The opposite side of moving electrode 103.
The distance of reference electrode 101 ' and driving electrodes 103 is enough to provide noise at least partly to eliminate common-mode noise and post
Raw coupling reference.In certain embodiments, reference electrode 101 ' and induction electrode 101 can have equal length and width,
And it can be arranged in parallel.Reference electrode 101 ' can be similar to induction electrode 101 and sense fingerprint ridge/fingerprint valley signal like that, but
Its substantial remitted its fury.Reference electrode 101 ' is closely spaced with induction electrode 101 and has similar size, two electricity
Pole can produce roughly equal noise and parasitic signal.The noise and parasitic signal of equal coupling can be for example by subtracting two
Signal on electrode and be eliminated.
According to some embodiments, induction electrode 101 and reference electrode 101 ' can be coupled to difference by difference filter 123
Amplifier 125.
A plurality of illusory driving electrodes 103 ' parallel arrangement and can be electrically connected to each other, a plurality of illusory driving electrodes 103 ' with
A plurality of driving electrodes 103 are arranged in correspondence with the opposite side in reference electrode 101 ', the i.e. side opposite with induction electrode 101.
Illusory driving electrodes 103 ' are spaced apart with reference electrode 101 ' with gap 107 '.Gap 107 ' can be with 107 phase of gap
Together.Illusory driving electrodes 103 ' can be connected to reference potential during fingerprint image senses, such as be grounded.In fingerprint image sense
Any instant of time surveyed, one in driving electrodes 103 can be encouraged by drive signal, and remaining driving electrodes 103
Reference potential can be coupled to, such as is grounded.Using the arrangement, noise is coupled substantially equally to induction electrode 101 and reference
Electrode 101 ', so as to be eliminated for example, by difference amplifier 125.The circuit arrangement for eliminating or reducing noise jamming can root
Various modes are taken according to actual demand, the disclosure is limited not to this.
According to the embodiment, the accuracy of fingerprint recognition can be improved, eliminates the coupling of the fingerprint ridge outside detector gap
Close interference.
Fig. 9 schematically shows the structure diagram of the fingerprint detection element according to another example embodiment of the disclosure.
As shown in figure 9, fingerprint detection element 310 according to the present embodiment and the fingerprint detection element 110 shown in Fig. 2
Difference lies in fingerprint detection element 310 to further include the second induction electrode 101 " and a plurality of second driving electrodes 103 ".Second sensing
Electrode 101 " can be electrically connected with induction electrode 101.
Second induction electrode 101 " is parallel with induction electrode 101 and is set up in parallel, and positioned at induction electrode 101 with it is a plurality of
The opposite side of driving electrodes 103.
A plurality of second driving electrodes 103 " are arranged in parallel and are spaced apart from each other.A plurality of second driving electrodes 103 " are respectively with
Two induction electrodes 101 " are opposite to define multiple second detector gaps 107 " at interval.A plurality of second driving electrodes 103 " with it is more
The first driving electrodes of bar 103 are arranged in correspondence with the side opposite with induction electrode 101 of the second induction electrode 101 ".
In the present embodiment, driving electrodes 103,101 and second driving electrodes 103 " of induction electrode, the second sensing are passed through
Electrode 101 " forms a pair of line imaging device, for producing more accurately fingerprint image.By finger first pass through detector gap 107 or
107 " determine the moving direction of finger.In addition, it can be become by comparing the signal of 101 and second induction electrode 101 " of induction electrode
Change determine finger translational speed (such as：By calculating time of the identical fingerprint portion by detector gap 107 and 107 "
Difference obtains the translational speed of finger), more accurately fingermark image is obtained with this.
Figure 10 schematically shows the structure diagram of the fingerprint detection element according to another example embodiment of the disclosure.
As shown in Figure 10, fingerprint detection element 410 according to the present embodiment combines the fingerprint inspection shown in Fig. 8 and Fig. 9
Survey element.Difference lies in fingerprint detection element 410 also to wrap for fingerprint detection element 310 shown in fingerprint detection element 410 and Fig. 9
Include two reference electrodes 101 ' and two groups of a plurality of illusory driving electrodes 103 '.Two groups of a plurality of illusory driving electrodes 103 ' can be electric each other
Connection.
One reference electrode 101 ' can be abreast oppositely arranged with induction electrode 101 and positioned at induction electrode 101 with it is more
The opposite side of bar driving electrodes 103.Another reference electrode 101 ' can be abreast oppositely arranged simultaneously with the second induction electrode 101 "
Positioned at the side opposite with a plurality of second driving electrodes 103 " of the second induction electrode 101 ".
One group of a plurality of illusory driving electrodes 103 ' is arranged in parallel and is electrically connected to each other.The a plurality of illusory driving electrodes 103 ' of the group
It is arranged in correspondence with a plurality of driving electrodes 103 in the side opposite with induction electrode 101 of reference electrode 101 '.Another group a plurality of
Illusory driving electrodes 103 ' are arranged in parallel and are electrically connected to each other.The a plurality of illusory driving electrodes 103 ' of the group and a plurality of second driving electricity
Pole 103 " is arranged in correspondence with the side opposite with the second induction electrode 101 " of reference electrode 101 '.
Other aspects of fingerprint detection element 410 according to the present embodiment are similar with aforementioned fingerprint detecting element, herein
Repeat no more.
Figure 11 schematically shows the electronic device 500 according to one example embodiment of the disclosure, wherein may include foregoing
Fingerprint Identification sensor.Electronic device 500 is such as can be smart mobile phone, tablet computer.
As shown in the figure, electronic device includes transparent cover plate 501.Transparent cover plate 501 includes viewing area 511 and non-display area
515.Fingerprint Identification sensor may be disposed at viewing area 511 or non-display area 515.
According to some embodiments, a part for the non-display area of transparent cover plate is used as the substrate 111 of fingerprint Identification sensor.
The illustrative embodiments of the disclosure are particularly shown and described above.It should be understood that the present disclosure is not limited to institute
Disclosed embodiment, on the contrary, the disclosure is intended to cover the various modifications comprising in the spirit and scope of the appended claims
And equivalent arrangements.
Claims (14)
1. a kind of method for manufacturing fingerprint Identification sensor, including：
Prepare substrate；
Embossed layer is formed on the substrate；
Multiple grooves are formed in the embossed layer；
Conductive material is filled in the multiple groove, fingerprint detection element is formed, wherein the fingerprint detection element includes：
Induction electrode；
A plurality of driving electrodes, a plurality of driving electrodes parallel arrangement and are spaced apart from each other, a plurality of driving electrodes respectively with
The induction electrode is opposite to define multiple detector gaps at interval, so that multiple fingerprint identification units are formed, it is the multiple
Fingerprint identification unit arrangement is in single file or multirow；
Wherein, multiple grooves are formed in the embossed layer includes：Adjust the depth of the multiple groove so that when fingerprint ridge position
During detector gap between one of induction electrode and multiple driving electrodes, between one of induction electrode and the plurality of driving electrodes
Rate of change of capacitance be 30% to 80%.
2. the pitch between the method as described in claim 1, wherein adjacent driven electrode is equal to each other and in 50-60 μ m
Interior, the width of driving electrodes is equal to each other and in 20-45 μ m, and the size of detector gap is equal to each other and at 20-40 μm
In the range of.
3. method as claimed in claim 2, wherein the substrate is strengthened glass, tempered glass, ceramics, sapphire, PET film
Or FPC substrates.
4. method as claimed in claim 3, wherein the embossed layer is ultraviolet-curing resin, hot-setting adhesive, light binding or certainly dry
Glue.
5. a kind of fingerprint Identification sensor, including：
Substrate；
Embossed layer on the substrate is formed, the coining layer surface is provided with multiple grooves；And
Fingerprint detection element, is placed in the multiple groove；
Wherein described fingerprint detection element includes：
Induction electrode；
A plurality of driving electrodes, a plurality of driving electrodes parallel arrangement and are spaced apart from each other, a plurality of driving electrodes respectively with
The induction electrode is opposite to define multiple detector gaps at interval, so that multiple fingerprint identification units are formed, it is the multiple
Fingerprint identification unit arrangement is in single file or multirow；
Wherein the multiple groove has a depth t, and the thickness of the induction electrode and a plurality of driving electrodes is by the depth
T definition is spent, the multiple groove is configured so as to work as inspection of the fingerprint ridge between one of induction electrode and multiple driving electrodes
When surveying gap, the rate of change of capacitance between one of induction electrode and the plurality of driving electrodes is 30% to 80%.
6. the pitch between fingerprint Identification sensor as claimed in claim 5, wherein adjacent driven electrode be equal to each other and
In 50-60 μ ms, the width of driving electrodes is equal to each other and in 20-45 μ m, and the size of detector gap is equal to each other
And in 20-40 μ ms.
7. fingerprint Identification sensor as claimed in claim 5, wherein the substrate is strengthened glass, tempered glass, ceramics, indigo plant
Jewel, PET film or FPC substrates.
8. fingerprint Identification sensor as claimed in claim 5, wherein the embossed layer is ultraviolet-curing resin, hot-setting adhesive, light
Solid glue or from dry glue.
9. fingerprint Identification sensor as claimed in claim 5, wherein the fingerprint detection element further includes reference electrode and more
The illusory driving electrodes of bar,
The reference electrode is abreast oppositely arranged with the induction electrode and positioned at the induction electrode and a plurality of drive
The opposite side of moving electrode,
The a plurality of illusory driving electrodes are arranged in parallel and are electrically connected to each other, a plurality of illusory driving electrodes and a plurality of drive
Moving electrode is arranged in correspondence with the side opposite with the induction electrode of the reference electrode.
10. fingerprint Identification sensor as claimed in claim 5, wherein the fingerprint detection element includes metallic particles, graphite
Alkene, carbon nanotubes or conducting polymer composite.
11. fingerprint Identification sensor as claimed in claim 5, wherein the fingerprint detection element includes conductive grid.
12. a kind of electronic device, including such as claim 5 to 11 any one of them fingerprint Identification sensor.
13. electronic device as claimed in claim 12, wherein the electronic device includes viewing area and non-display area, the finger
Line identification sensor is located at the viewing area.
14. electronic device as claimed in claim 12, wherein the electronic device includes viewing area and non-display area, the finger
Line identification sensor is located at the non-display area.
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| CN201410313081.0A CN104050464B (en) | 2014-07-02 | 2014-07-02 | Manufacture method, fingerprint Identification sensor and the electronic device of fingerprint Identification sensor |
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| CN201410313081.0A CN104050464B (en) | 2014-07-02 | 2014-07-02 | Manufacture method, fingerprint Identification sensor and the electronic device of fingerprint Identification sensor |
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| CN104050464B true CN104050464B (en) | 2018-05-08 |
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| CN106156704A (en) * | 2015-04-07 | 2016-11-23 | 深圳莱宝高科技股份有限公司 | A kind of face equipment and preparation method thereof |
| CN106991361A (en) * | 2016-01-21 | 2017-07-28 | 中芯国际集成电路制造(上海)有限公司 | A kind of semiconductor devices and preparation method thereof, electronic installation |
| DE102017130379A1 (en) * | 2017-03-30 | 2018-10-04 | Huf Hülsbeck & Fürst Gmbh & Co. Kg | Sensor device with capacitive sensor for motor vehicles |
| CN110109567B (en) | 2019-04-24 | 2020-07-10 | 武汉华星光电半导体显示技术有限公司 | Touch pad, touch display and manufacturing method of touch pad |
| CN215114917U (en) * | 2021-06-22 | 2021-12-10 | 苏州纳格光电科技有限公司 | Device for monitoring temperature change |
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| GB9725571D0 (en) * | 1997-12-04 | 1998-02-04 | Philips Electronics Nv | Electronic apparatus comprising fingerprint sensing devices |
| US8866347B2 (en) * | 2010-01-15 | 2014-10-21 | Idex Asa | Biometric image sensing |
| CN103530609B (en) * | 2013-10-11 | 2017-07-04 | 北京京东方光电科技有限公司 | A kind of fingerprint recognition element, display screen and display device |
| CN103886299B (en) * | 2014-03-27 | 2019-04-05 | 成都费恩格尔微电子技术有限公司 | A kind of encapsulating structure of capacitive fingerprint sensing device |
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| CN103778410A (en) * | 2014-01-10 | 2014-05-07 | 南昌欧菲光科技有限公司 | Capacitive biometric feature recognition sensor |
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