CN104048754B - The photo-thermal effect modification method of photoconductive detectors in laser parameter measurement - Google Patents
The photo-thermal effect modification method of photoconductive detectors in laser parameter measurement Download PDFInfo
- Publication number
- CN104048754B CN104048754B CN201410216004.3A CN201410216004A CN104048754B CN 104048754 B CN104048754 B CN 104048754B CN 201410216004 A CN201410216004 A CN 201410216004A CN 104048754 B CN104048754 B CN 104048754B
- Authority
- CN
- China
- Prior art keywords
- temperature
- laser
- detector
- parameter measurement
- irradiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The present invention proposes the photo-thermal effect modification method of a kind of photoconductive detectors in laser parameter measurement application, comprise and terminate the hot residual signal of rear moment using laser irradiation and float as the baseline temperature of laser irradiation finish time; The baseline wander amount in laser action process of getting equal to analyze the moment with the ratio of hot residual signal before detector output signal sum and irradiation overall process output signal the ratio of summation.Method of the present invention effectively can alleviate the photosensitive first temperature rise of photoconductive detectors caused by irradiation to laser parameter measurement impact that result is brought, and can play a significant role in the laser parameter measurement based on infrared eyes such as guide type HgCdTe, InSb.Based on method of the present invention, laser parameter measurement system can use single sensing chip detector, reduce the cost of measuring system, power consumption and weight, and can solve and utilize temperature sensor to carry out photosensitive first working temperature to monitor the monitor temperature that produces and the inconsistent problem of photosensitive first actual work temperature.
Description
Technical field
The present invention relates to a kind of photodetector application method, the photoconductive detectors photo-thermal effect modification method in especially a kind of light laser parameter measurement.
Background technology
The output signal V=PR of photoconductive detectors during constant current mode operation
v(T)+I
br
d(T), wherein P incides the laser power in the photosensitive unit of detector, R
v(T) be voltage responsibility, I
bfor testing circuit loads bias current on the detector, R
d(T) be the dark resistance of detector, wherein R
v(T), R
d(T) can demarcate in advance, I
bfor constant.Power P=[the V-I obtaining being incident to detector can be resolved thus
br
d(T)] R
v(T), this is the ultimate principle that photoconductive detectors is used for laser parameter measurement.
Dark resistance and the responsiveness of typical IR optical waveguide detector (as mercury cadmium telluride HgCdTe, indium antimonide InSb etc.) are all comparatively responsive to working temperature, and photosensitive unit temperature rise will occur under laser irradiation.Dark resistance and responsiveness change with photosensitive first temperature rise, therefore, contain and have photo-thermal effect composition in output signal.Photo-thermal effect signal comprises two parts: dark resistance R
d(T) caused baseline wander is varied with temperature, and responsiveness R
v(T) caused photoelectric response amplitude change is varied with temperature.At present conventional photo-thermal effect disposal route is: carry temperature sensing chip with detector or external temp sensor carries out temperature monitoring, and using it working temperature as detector, then according to dark resistance and responsiveness calibration data, calculates laser power density.
There is certain deficiency in above-mentioned conventional method: the heat transmission 1) between environment and the photosensitive unit of detector needs the time, also there is thermograde, and the monitor value of external temp sensor is not the real work temperature of detector.2) photosensitive unit heats up and is exceedingly fast under laser action, even if be embedded in temperature sensing chip or sensor at detector, the temperature recorded also cannot reflect the working temperature of photosensitive unit; The people such as National University of Defense technology Wang Fei in 2007 " infrared laser engineering " the 36th volume the 4th phase literary composition " analysis of HgCdTe detector Pt resistance temperature measurement " to study by experiment and numerical analysis confirms this conclusion.3) in detector, implant temperature sensing chip, device cost will increase, and economy declines; Meanwhile, cause the adding of chip temperature that measuring system data volume is double, power consumption rises, unsuitable large-scale application.
Summary of the invention
The object of this invention is to provide the photo-thermal effect modification method of photoconductive detectors in a kind of laser parameter measurement, in order to improve the uncertainty index of laser parameter measurement.
Technical scheme of the present invention is:
A photo-thermal effect modification method for photoconductive detectors in laser parameter measurement, comprises the following steps:
[1] measure photoconductive detectors dark resistance and responsiveness variation with temperature data, carry out curve fitting and obtain dark resistance and the temperature variant function R of responsiveness respectively
dand R (T)
v(T);
[2] in time domain, discrete sampling is carried out to the detector output signal before and after laser action and in laser irradiation process, the detector output signal of n-th sampling gained is V (n), sampled point sequence number wherein duration of irradiation is 1 ~ N, N is positive integer, it is N+1 that irradiation terminates rear first sampled point sequence number, and it is 0 that irradiation starts previous sampled point sequence number;
[3] irradiation terminate signal V (0) that rear first sampled signal V (N+1) deduct predose obtain bright dipping terminate after hot residual signal V
res;
[4] calculate the baseline wander signal of different sampling instant respectively, the baseline wander amount wherein during n-th sampling (0<n<N+1) is
[5] calculate the working temperature of the photosensitive unit of different sampling instant respectively, the working temperature calculation procedure of wherein n-th sampling instant is:
[5.1] by formula R
d,n(T
n)=[V (0)+V
res, n] I
b, calculate the detector dark resistance R of n-th sampling instant
d,n(T
n), I in formula
bfor testing circuit loads bias current on the detector;
[5.2] function R is varied with temperature according to dark resistance in step [1]
d(T) R and in [5.1]
d,n(T
n), inverting solves the detector work temperature obtaining this sampling instant
n;
[6] voltage responsibility of different sampling instant is calculated respectively, the voltage responsibility R of wherein n-th sampling instant
v(T
n) calculation procedure be: by detector work temperature
nsubstitute into responsiveness in step [1] and vary with temperature function R
v(T) calculate in and obtain;
[7] calculate not testing laser power in the same time respectively, the laser power of wherein n-th sampling instant is P
n=[V (n)-V
res, n] R
v(T
n).
In above-mentioned steps, dark resistance and the temperature variant data of responsiveness adopt the method for conventional temperature cycling test to get parms.
In above-mentioned steps, photoconductive detectors works in constant current drive pattern.
The beneficial effect that the present invention has:
1, the invention provides a kind of effectively alleviate the photosensitive first temperature rise of photoconductive detectors caused by laser irradiation to laser parameter measurement result bring the disposal route of impact, the method can be widely used in the laser parameter measurement of the infrared eyes such as typical light conductivity type HgCdTe, InSb.
2, photo-thermal effect modification method of the present invention solves extra increases cost that temperature sensing chip or external temp sensor bring, power consumption, weight increase problem, also overcomes to carry out photosensitive first working temperature with different temperatures sensor/chip and monitor the monitor temperature that brings and the inconsistent problem of actual work temperature simultaneously.
Accompanying drawing explanation
Fig. 1 is the process flow diagram of photo-thermal effect correction step of the present invention;
Fig. 2 is the results contrast of the detector measurement laser power density before and after photo-thermal effect correction.
Embodiment
Technical thought of the present invention is: known by lot of experiments and numerical analysis, the hot residual signal size (i.e. the amplitude of baseline wander) of photoconductive detectors after laser action terminates and the total laser energy incided on this detector are approximated to direct ratio, and at least little than the photosignal order of magnitude of photo-thermal effect signal in laser action process.In addition, suppose that laser irradiation terminates the baseline wander of front moment identical with the hot residual signal that irradiation terminates rear moment.Based on above-mentioned condition, can think that the baseline wander amount in measuring can according to hot residual signal method estimation, namely the ratio of detector output signal sum and irradiation overall process signal summation before baseline wander amount equals to analyze the moment with the ratio of hot residual signal is got, so can try to achieve photosensitive first working temperature of different sampling instant, and then know laser power density now.
As shown in Figure 1, the present invention for detector photo-thermal modification method concrete steps during laser parameter measurement is:
[1] detector is placed in temperature control device, measures the dark resistance under different temperatures and responsiveness respectively;
[2] data are varied with temperature to dark resistance and responsiveness and carry out index or conic fitting, obtain dark resistance and the responsiveness function R about temperature respectively
dand R (T)
v(T).
Usual employing conic fitting, can be expressed as:
R
d(T)=k
1t
2+ k
2t+k
3, wherein k
1, k
2, k
3for fitting coefficient;
R
v(T)=k'
1t
2+ k'
2t+k
3', wherein k'
1, k'
2, k'
3for fitting coefficient.
[3] select suitable constant current testing circuit and signal amplification circuit, wherein bias current is often taken as a milliampere magnitude; Make testing laser normal incidence on detector photosurface, with the detector output signal before and after the effect of data acquisition equipment recording laser and in laser irradiation process.The detector output signal remembering different sampling instant n gained is V (n).Sampled point sequence number wherein duration of irradiation is 1 ~ N, and it is N+1 that irradiation terminates rear first sampled point sequence number, and it is 0 that irradiation starts previous sampled point sequence number.
[4] irradiation is terminated signal V (0) that rear first sampled signal V (N+1) deduct predose obtain bright dipping terminate after hot residual signal V
res, i.e. V
res=V (N+1)-V (0).
[5] the baseline wander signal of the different sampling instant of step by step calculation.Baseline wander amount wherein during n-th sampling (0<n<N+1) is
The implication of this formula is: due to the photo-thermal effect signal in laser action process and irradiation just at the end of hot residual signal be all approximately proportional to the cumlative energy incided before this on this detector.In laser measurement application simultaneously, photo-thermal effect signal is much smaller than sharp photogenic photosignal, therefore according to the historical signal during laser action and value weighting, hot residual signal can be assigned to different sampling instant.
[6] working temperature of the photosensitive unit of different sampling instant is calculated respectively.Wherein the working temperature of n-th sampling instant is calculated as follows: first R with the formula
d,n(T
n)=[V (0)+V
res, n] I
bcalculate the dark resistance of n-th sampling instant, I in formula
bfor testing circuit loads bias current on the detector, then according to dark resistance fitting function R
d(T) inverting solves photosensitive first work temperature of this sampling instant
n.
[7] voltage responsibility of different sampling instant is calculated respectively.The wherein voltage responsibility R of n-th sampling instant
v(T
n) pass through photosensitive for detector first work temperature
nsubstitute into responsiveness fitting function R
v(T) calculate and obtain.
[8] not testing laser power density is in the same time calculated respectively.Wherein the laser power of n-th sampling instant is P
n=[V (n)-V
res, n] R
v(T
n).
Specific embodiment:
Infrared continuous wave laser is as testing light source to select an output power stability to be better than in the solid of 3 ‰, and testing laser power density gets steady state value 1.3W/cm
2, test component is the HgCdTe optical waveguide detector of constant current mode work, with the dynamic response signal in High Precise Data Acquisition System recording laser loading procedure, and carries out laser power density restore calculation.Power density curve comparison before and after the correction of use the inventive method is as accompanying drawing 2.Visible, along with the laser action time is elongated before revising, measurement result is bigger than normal gradually, and revised curve is tending towards level.Because the output power of laser instrument is more stable, thus demonstrate the reliability of above-mentioned modification method.
The present invention does not limit to above-mentioned embodiment; for example select different dark resistances and the calibration mode of responsiveness; the mode of operation of photoconductive detectors becomes constant voltage from constant current; appropriateness adjustment is carried out to computation sequence; and use dissimilar optical waveguide detector etc., all in protection scope of the present invention.
Claims (4)
1. the photo-thermal effect modification method of photoconductive detectors in laser parameter measurement, is characterized in that, comprise the following steps:
[1] measure photoconductive detectors dark resistance and responsiveness variation with temperature data, carry out curve fitting and obtain dark resistance and the temperature variant function R of responsiveness respectively
dand R (T)
v(T);
[2] in time domain, discrete sampling is carried out to the detector output signal before and after laser action and in laser irradiation process, the detector output signal of n-th sampling gained is V (n), sampled point sequence number wherein duration of irradiation is 1 ~ N, N is positive integer, it is N+1 that irradiation terminates rear first sampled point sequence number, and it is 0 that irradiation starts previous sampled point sequence number;
[3] irradiation terminate signal V (0) that rear first sampled signal V (N+1) deduct predose obtain bright dipping terminate after hot residual signal V
res;
[4] calculate the baseline wander signal of different sampling instant respectively, the baseline wander amount wherein during n-th sampling is
Wherein 0<n<N+1;
[5] calculate the working temperature of the photosensitive unit of different sampling instant respectively, the working temperature calculation procedure of wherein n-th sampling instant is:
[5.1] by formula R
d,n(T
n)=[V (0)+V
res, n]/I
b, calculate the detector dark resistance R of n-th sampling instant
d,n(T
n), I in formula
bfor testing circuit loads bias current on the detector;
[5.2] function R is varied with temperature according to dark resistance in step [1]
d(T) R and in [5.1]
d,n(T
n), inverting solves the detector work temperature obtaining this sampling instant
n;
[6] voltage responsibility of different sampling instant is calculated respectively, the voltage responsibility R of wherein n-th sampling instant
v(T
n) calculation procedure be: by detector work temperature
nsubstitute into responsiveness in step [1] and vary with temperature function R
v(T) calculate in and obtain;
[7] calculate not testing laser power in the same time respectively, the laser power of wherein n-th sampling instant is P
n=[V (n)-V
res, n]/R
v(T
n).
2. the photo-thermal effect modification method of photoconductive detectors in laser parameter measurement according to claim 1, is characterized in that: the R in described step [1]
dand R (T)
v(T) be the matched curve parameter adopting temperature cycling test to obtain.
3. the photo-thermal effect modification method of photoconductive detectors in laser parameter measurement according to claim 1, is characterized in that: described photoconductive detectors is mercury-cadmium tellurid detector or indium antimonide detector.
4. the photo-thermal effect modification method of photoconductive detectors in laser parameter measurement according to claim 1, is characterized in that: the working method of described photoconductive detectors is that constant current drives.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410216004.3A CN104048754B (en) | 2014-05-21 | 2014-05-21 | The photo-thermal effect modification method of photoconductive detectors in laser parameter measurement |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410216004.3A CN104048754B (en) | 2014-05-21 | 2014-05-21 | The photo-thermal effect modification method of photoconductive detectors in laser parameter measurement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104048754A CN104048754A (en) | 2014-09-17 |
| CN104048754B true CN104048754B (en) | 2016-02-03 |
Family
ID=51501891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410216004.3A Active CN104048754B (en) | 2014-05-21 | 2014-05-21 | The photo-thermal effect modification method of photoconductive detectors in laser parameter measurement |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104048754B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113375795B (en) * | 2021-06-28 | 2023-07-25 | 中国人民解放军92493部队计量测试研究所 | Heat loss compensation method for laser energy meter |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020106827A1 (en) * | 2000-10-16 | 2002-08-08 | Mccarron Eugene Michael | Infrared thermographic screening technique for semiconductor-based chemical sensors |
| CN101226148A (en) * | 2008-02-19 | 2008-07-23 | 中国原子能科学研究院 | Method and device for detecting laser damage threshold of optical element |
| JP2008203155A (en) * | 2007-02-21 | 2008-09-04 | Denso Corp | Sensor circuit |
| JP4664763B2 (en) * | 2005-07-21 | 2011-04-06 | 株式会社東芝 | Temperature detector and high frequency heater |
| CN102322950A (en) * | 2011-08-15 | 2012-01-18 | 西北核技术研究所 | Mid-infrared detection circuit parameter design method based on bridge principle |
| CN103579406A (en) * | 2013-10-10 | 2014-02-12 | 中国科学院上海技术物理研究所 | Infrared detector structure for improving spectral flatness |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000002677A (en) * | 1998-06-15 | 2000-01-07 | Asahi Chem Ind Co Ltd | Analyzer |
| JP2008026285A (en) * | 2006-07-25 | 2008-02-07 | Konica Minolta Business Technologies Inc | Temperature-detecting device and fixing apparatus |
-
2014
- 2014-05-21 CN CN201410216004.3A patent/CN104048754B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020106827A1 (en) * | 2000-10-16 | 2002-08-08 | Mccarron Eugene Michael | Infrared thermographic screening technique for semiconductor-based chemical sensors |
| JP4664763B2 (en) * | 2005-07-21 | 2011-04-06 | 株式会社東芝 | Temperature detector and high frequency heater |
| JP2008203155A (en) * | 2007-02-21 | 2008-09-04 | Denso Corp | Sensor circuit |
| CN101226148A (en) * | 2008-02-19 | 2008-07-23 | 中国原子能科学研究院 | Method and device for detecting laser damage threshold of optical element |
| CN102322950A (en) * | 2011-08-15 | 2012-01-18 | 西北核技术研究所 | Mid-infrared detection circuit parameter design method based on bridge principle |
| CN103579406A (en) * | 2013-10-10 | 2014-02-12 | 中国科学院上海技术物理研究所 | Infrared detector structure for improving spectral flatness |
Non-Patent Citations (2)
| Title |
|---|
| "1MeV电子辐照对碲镉汞中波光导器件的影响";乔辉,贾嘉,陈新禹,李向阳,龚海梅;《红外与毫米波学报》;20040630;第23卷(第3期);第172-175页 * |
| "中红外高能激光探测单元";陈绍武,张检民,宇文璀蕾,冯刚;《强激光与粒子束》;20120630;第24卷(第6期);第1306-1310页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104048754A (en) | 2014-09-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2636119B1 (en) | Controlling dynamic systems by measuring the no-load voltage of a photovoltaic generator | |
| EP2636120B1 (en) | Controlling dynamic systems by measuring the short circuit current of a photovoltaic generator | |
| CN103398784B (en) | Self-rectification circuit for infrared thermopile temperature sensor | |
| FR2512308A1 (en) | APPARATUS AND METHOD FOR CONTROLLING THE PASSAGE OF CURRENT SOURCE IN A RESISTANCE HEATING ELEMENT | |
| Muller et al. | Determining outdoor CPV cell temperature | |
| CN105424180B (en) | Calibration method for terahertz laser power meter | |
| CN103335717B (en) | A kind of thermal infrared imager high precision temperature resistance drift temp measuring method based on becoming integral mode | |
| CN104459372A (en) | Displacement damage dosage detection method based on p-i-n structure | |
| CN102494779B (en) | Infrared measurement system and measurement method for surface temperature of seawater | |
| US20140076400A1 (en) | System for monitoring operating angle of solar tracker in real time | |
| CN207556551U (en) | A kind of light sensitive device dark current correction of temperature drift system | |
| CN104048754B (en) | The photo-thermal effect modification method of photoconductive detectors in laser parameter measurement | |
| KR101091936B1 (en) | Apparatus for detecting sunlight incident angle using pyranometer sensor | |
| JP2017108586A (en) | Solar cell module characteristics test apparatus | |
| Ramaprabha et al. | Development of an improved model of SPV cell for partially shaded solar photovoltaic arrays | |
| CN105547484B (en) | For the pixel rdaiation response scaling method of linear array detector reliability screening | |
| Mangeni et al. | Photovoltaic module cell temperature measurements using linear interpolation technique | |
| CN104697632A (en) | Narrow pulse width laser micro peak power density tester control system | |
| CN104198036A (en) | Power measuring circuit | |
| JP2016508223A (en) | Conductivity measurement with wide dynamic range of water | |
| RU2603338C1 (en) | Method of calibrating sensor containing heat-sensitive element | |
| Driesse | Radiometer Response Time and Irradiance Measurement Accuracy | |
| Elbaset | Design and practical implementation of a simple data acquisition system for photovoltaic applications | |
| Khrystyna et al. | Experimental studies of temperature channel efficiency for solar energy systems | |
| Humeniuk | Device for determining parameters of a solar cell model |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |