CN104037236B - A kind of floating junction silicon carbide SBD device with deep trench - Google Patents
A kind of floating junction silicon carbide SBD device with deep trench Download PDFInfo
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- CN104037236B CN104037236B CN201410166378.9A CN201410166378A CN104037236B CN 104037236 B CN104037236 B CN 104037236B CN 201410166378 A CN201410166378 A CN 201410166378A CN 104037236 B CN104037236 B CN 104037236B
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 45
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 238000007667 floating Methods 0.000 title claims abstract description 31
- 150000002500 ions Chemical class 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 18
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 18
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 18
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 18
- -1 Nitrogen ion Chemical class 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 230000005855 radiation Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 206010020843 Hyperthermia Diseases 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000036031 hyperthermia Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The present invention relates to a kind of floating junction silicon carbide SBD device with deep trench, it includes metal, SiO2Spacer medium, groove, a N‑Epitaxial layer, P+Ion implanted region, secondary N‑Epitaxial layer, N+Substrate zone, ohmic contact regions, wherein, the P+Ion implanted region is in below the corner of deep trench；The groove is deep trench, and the depth of groove is 1.5~8 μm.The present invention has the floating junction silicon carbide SBD device of deep trench, inherits plough groove type carborundum SBD basic structure, has the advantages that forward current is big, while overcoming the big shortcoming of reverse leakage current.
Description
Technical field
The present invention relates to microelectronics technology, more particularly to a kind of floating junction silicon carbide SBD device with deep trench.
Background technology
Semiconductor material with wide forbidden band is the third generation semi-conducting material using materials such as carborundum, gallium nitride as representative, at this
Wherein especially famous with carbofrax material, SiC material energy gap is big, can reach more than 3eV.Critical breakdown electric field can reach
More than 2MV/cm.SiC material thermal conductivity height (4.9W/cm.K or so), and device high temperature resistant, than Si more suitable for high current device
Part.SiC carrier lifetimes are short, only several nanoseconds to hundreds of nanoseconds.The radiation-resisting performance of SiC material is also very outstanding, and radiation is drawn
The electron-hole contrast Si materials entered want much less.Therefore, physical characteristic excellent SiC causes SiC device in Aero-Space electricity
Son, the neck such as hyperthermia radiation adverse circumstances, military electronic radio communication, radar, automotive electronics, high-power phased array thunder, radio frequency
Domain is widely used, and has extremely good application prospect in following new energy field.
Floating junction structure can improve the breakdown voltage of the device under identical doping concentration by about one time, SiC floating junction devices
Part is manufactured successfully first in laboratory by T Hatakeyama et al..SiC floating junctions are obtained based on secondary epitaxy technique, i.e.,
Carried out on an epitaxial layer after ion implanting, second of epitaxial growth is carried out on an epitaxial layer, so as to form floating junction.
Schottky diode is widely used due to its low pressure drop and high current in power device.It is bigger in order to realize
Electric current, the nineties is just it is proposed that the Schottky diode (TSBD) of SiC plough groove types.The Schottky diode of plough groove type is significantly
The area of Schottky contacts is added, lower pressure drop and bigger electric current is realized.But the pole of Schottky two of SiC plough groove types
Pipe can introduce peak value electric field in the corner of groove.Schottky diode can reduce effect in the potential barrier of Schottky under reverse bias
, leakage current should be produced in the presence of Flied emission model and thermal field emission model, and be exponentially increased with electric field, and groove is turned
The reverse leakage current that peak value electric field substantially increases device is introduced at angle.
In view of drawbacks described above, creator of the present invention obtains this creation finally by prolonged research and practice.
The content of the invention
It is above-mentioned to overcome it is an object of the invention to provide a kind of floating junction silicon carbide SBD device with deep trench
Technological deficiency.
To achieve the above object, the present invention provides a kind of floating junction silicon carbide SBD device with deep trench, and it includes gold
Category, SiO2Spacer medium, groove, a N-Epitaxial layer, P+Ion implanted region, secondary N-Epitaxial layer, N+Substrate zone, Ohmic contact
Area, wherein,
The P+Ion implanted region is in below the corner of deep trench；
The groove is deep trench, and the depth of groove is 1.5~8 μm.
Further, the N-Epitaxial layer is topmost 20 μm to the thickness of bottom surface, and wherein Nitrogen ion doping concentration is
1x1015cm-3~1x1016cm-3, a N-The thickness of epitaxial layer is 12~17 μm.
Further, the P+The doping concentration of ion implanted region is 5x1018cm-3~1x1019cm-3, thickness is 0.4~0.6
μm。
Further, P+Ion implanted region is in below the corner of deep trench, P+0~1.5 μm of ion implanting offset groove.
Further, the P+Trench corner region is completely covered ion implanting region.
Further, corresponding annular is become in the floating below at the groove for being shaped as solid shape of groove, trench corner.
Further, the secondary N-Epitaxial layer is located at a N-Above epitaxial layer, thickness is 3~8 μm, and Nitrogen ion doping is dense
Spend for 1x1015cm-3~1x1016cm-3, a N-Epitaxial layer and secondary N-The gross thickness of epitaxial layer is 20 μm.
Further, the N+Substrate is N-type SiC substrate piece；N-Epitaxial layer is located at N+Substrate.
Further, the metal and SiO2Spacer medium is located at secondary N-Above epitaxial layer.
Compared with prior art the beneficial effects of the present invention are：The present invention has the floating junction carborundum of deep trench
SBD device, inherits plough groove type carborundum SBD basic structure, has the advantages that forward current is big.The device device that the present invention is provided
Part, conventional groove formula carborundum SBD is carried out to be improved based on SiC floating junction secondary epitaxy techniques, with reverse leakage
The low advantage of stream.Device high temperature resistant that the present invention is provided, high pressure resistant, switch time be short and capability of resistance to radiation is strong etc., can answer extensively
For field of power electronics.
Brief description of the drawings
Fig. 1 a have the profile of the floating junction silicon carbide SBD device of deep trench for the present invention；
Fig. 1 b have the top view of the floating junction silicon carbide SBD device of deep trench for the present invention；
Fig. 2 has an epitaxial layer top view of the floating junction silicon carbide SBD device of deep trench for the present invention.
Embodiment
Below in conjunction with accompanying drawing, the forgoing and additional technical features and advantages are described in more detail.
Refer to shown in Fig. 1 a, floating junction silicon carbide SBD device of the present invention with deep trench includes：Metal 1, SiO2Every
From medium 2, groove 3, a N-Epitaxial layer 4, P+Ion implanted region 5, secondary N-Epitaxial layer 6, N+Substrate zone 7, ohmic contact regions 8.
Incorporated by reference to shown in Fig. 1 b, in device of the invention, the N+Substrate 7 is N-type SiC substrate piece.N-Epitaxial layer 4
On N+ substrates 7, thickness is 12~17 μm, and Nitrogen ion doping concentration is 1x1015cm-3~1x1016cm-3。
The P+Ion implanted region 5 is located at a N-The surface of epitaxial layer 4, Al-doping concentration is 5x1018cm-3~
1x1019cm-3, ion implanting depth is 0.4~0.6 μm.Secondary N-Epitaxial layer 6 is located at a N-The top of epitaxial layer 4, thickness is 3
~8 μm, Nitrogen ion doping concentration is 1x1015cm-3~1x1016cm-3.N-Epitaxial layer 4 and secondary N-The total thickness of epitaxial layer 6
Spend for 20 μm.
The metal 1 and SiO2Spacer medium 2 is located at secondary N-The top of epitaxial layer 6.Metal 1 and SiO2The phase of spacer medium 2
Neighbour, and metal and and SiO2Spacer medium 2 has the part 12 that coincides up and down.Groove 3 is located at below metal 1, the surface of epitaxial layer,
The metal 1 and groove 3 have overlapping position 13.P+Ion implanted region is in below the corner of deep trench 3, P+Ion implanted region 5 away from
0~1.5 μm of groove, and P+The corner region of groove 3 is completely covered in the region of ion implanted region 5.
In the device that the present invention is used, under reverse biased, electric field is gathered at trench corner, and peak value electric field is by P+Ion
The PN junction of injection region 5 and epitaxial layer formation undertakes, and the Current mechanism of device corner is by no P+Xiao Te during ion implanted region 5
The Flied emission model and thermal field emission model of base potential barrier are changed into producing electricity with reverse avalanche current, reverse saturation current and depletion layer
Based on stream.The reverse leakage current of device is substantially reduced, close to the reverse leakage current of a preferable dimensional device.
Fig. 1 b and Fig. 2 are referred to, groove 3 uses strip or bulk figure, P+Ion implanted region 5 covers turning for groove 3
At angle, therefore P+The annular being shaped as with the same shape of groove 3 of ion implanted region 5.
Embodiment one：
Have the structure of the floating junction silicon carbide SBD device of deep trench as follows in reference picture 1a and Fig. 2, the present invention：
N+Substrate is N-type SiC substrate piece, a N-Epitaxial layer is located at N+Substrate.
P+Ion implanted region is located at a N-Epi-layer surface.Secondary N-Epitaxial layer is located at a N-On epitaxial layer.Metal and
SiO2Spacer medium is located at secondary N-Above epitaxial layer.Metal and SiO2Spacer medium is adjacent, and metal and and SiO2Spacer medium
There is the part that coincides up and down.Groove is located at below metal, the surface of epitaxial layer.P+Ion implanted region is in the corner of deep trench
Lower section, and P+Trench corner region is completely covered ion implanting region.
N-The thickness of epitaxial layer is 12 μm, and Nitrogen ion doping concentration is 1x1016cm-3。P+Ion implanted region Al-doping
Concentration is 1x1019cm-3, ion implanting depth is 0.6 μm.Secondary N-The thickness of epitaxial layer is 8 μm, and Nitrogen ion doping concentration is
1x1016cm-3.The depth of groove is 8 μm.
Embodiment two：
Have the structure of the floating junction silicon carbide SBD device of deep trench as follows in reference picture 1a and Fig. 1 b, the present invention：
N+Substrate is N-type SiC substrate piece.N-Epitaxial layer is located at N+Substrate.P+Ion implanted region is located at a N-
Epi-layer surface.Secondary N-Epitaxial layer is located at a N-On epitaxial layer.Metal and SiO2Spacer medium is located at secondary N-On epitaxial layer
Side.
Metal and SiO2Spacer medium is adjacent, and metal and and SiO2Spacer medium has the part that coincides up and down.Groove is located at
Below metal, the surface of epitaxial layer.P+Ion implanted region is in below the corner of deep trench, and P+Ion implanting region will
Trench corner region is completely covered.
N-The thickness of epitaxial layer is 15 μm, and Nitrogen ion doping concentration is 5x1015cm-3。P+Ion implanted region Al-doping
Concentration is 5x1018cm-3, ion implanting depth is 0.5 μm.Secondary N-The thickness of epitaxial layer is 5 μm, and Nitrogen ion doping concentration is
5x1015cm-3.The depth of groove is 4.5 μm.
Embodiment three：
Have the structure of the floating junction silicon carbide SBD device of deep trench as follows in reference picture 1a and Fig. 2, the present invention：
N+Substrate is N-type SiC substrate piece.N-Epitaxial layer is located at N+Substrate.P+Ion implanted region is located at a N-
Epi-layer surface.Secondary N-Epitaxial layer is located at a N-On epitaxial layer.Metal and SiO2Spacer medium is located at secondary N-On epitaxial layer
Side.Metal and SiO2Spacer medium is adjacent, and metal and and SiO2Spacer medium has the part that coincides up and down.Groove is located at metal
Lower section, the surface of epitaxial layer.P+Ion implanted region is in below the corner of deep trench, and P+Ion implanting region is by groove
Corner region is completely covered.
N-The thickness of epitaxial layer is 17 μm, and Nitrogen ion doping concentration is 1x1015cm-3。P+Ion implanted region Al-doping
Concentration is 1x1019cm-3, ion implanting depth is 0.4 μm.Secondary N-The thickness of epitaxial layer is 3 μm, and Nitrogen ion doping concentration is
1x1015cm-3.The depth of groove is 1.5 μm.
Presently preferred embodiments of the present invention is the foregoing is only, is merely illustrative for invention, and it is nonrestrictive.
Those skilled in the art understands, can carry out many changes to it in the spirit and scope that invention claim is limited, and changes,
It is even equivalent, but fall within protection scope of the present invention.
Claims (9)
1. a kind of floating junction silicon carbide SBD device with deep trench, it is characterised in that it includes metal, SiO2Spacer medium,
Groove, a N-Epitaxial layer, P+Ion implanted region, secondary N-Epitaxial layer, N+Substrate zone, ohmic contact regions, wherein,
The P+Ion implanted region is in below the corner of deep trench, P+Being shaped as ion implanted region is identical with groove shape
Annular, and P+Ion implanted region is located at a N-Epi-layer surface；
The groove is deep trench, and the depth of groove is 1.5~8 μm.
2. the floating junction silicon carbide SBD device according to claim 1 with deep trench a, it is characterised in that N-
Epitaxial layer and secondary N-The gross thickness of epitaxial layer is 20 μm, wherein a N-Epitaxial layer Nitrogen ion doping concentration is 1x1015cm-3~
1x1016cm-3, a N-The thickness of epitaxial layer is 12~17 μm.
3. the floating junction silicon carbide SBD device according to claim 1 or 2 with deep trench, it is characterised in that the P+
The doping concentration of ion implanted region is 5x1018cm-3~1x1019cm-3, thickness is 0.4~0.6 μm.
4. the floating junction silicon carbide SBD device according to claim 1 or 2 with deep trench, it is characterised in that P+Ion
Injection region is in below the corner of deep trench, P+0~1.5 μm of ion implanting offset groove.
5. the floating junction silicon carbide SBD device according to claim 3 with deep trench, it is characterised in that the P+Ion
Trench corner region is completely covered injection region.
6. the floating junction silicon carbide SBD device according to claim 3 with deep trench, it is characterised in that the shape of groove
Shape is the groove of solid shape, at trench corner below floating become corresponding annular.
7. the floating junction silicon carbide SBD device according to claim 1 or 2 with deep trench, it is characterised in that described two
Secondary N-Epitaxial layer is located at a N-Above epitaxial layer, thickness is 3~8 μm, and Nitrogen ion doping concentration is 1x1015cm-3~
1x1016cm-3, a N-Epitaxial layer and secondary N-The gross thickness of epitaxial layer is 20 μm.
8. the floating junction silicon carbide SBD device according to claim 7 with deep trench, it is characterised in that the N+Substrate
It is N-type SiC substrate piece；N-Epitaxial layer is located at N+ substrates.
9. the floating junction silicon carbide SBD device according to claim 7 with deep trench, it is characterised in that the metal
And SiO2Spacer medium is located at secondary N-Above epitaxial layer.
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| TW513815B (en) * | 2001-10-12 | 2002-12-11 | Ind Tech Res Inst | Silicon carbide dual metal trench Schottky diode and its manufacture method |
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