CN104037045A - Method for testing de-clamping terminal point of substrate - Google Patents
Method for testing de-clamping terminal point of substrate Download PDFInfo
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- CN104037045A CN104037045A CN201310068404.XA CN201310068404A CN104037045A CN 104037045 A CN104037045 A CN 104037045A CN 201310068404 A CN201310068404 A CN 201310068404A CN 104037045 A CN104037045 A CN 104037045A
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Abstract
The invention provides a method for testing a de-clamping terminal point of a substrate. A plasma processing cavity is internally provided with a base station, the base station internally comprises a static chuck, the substrate is arranged above the static chuck, the base station is internally provided with a plurality of gas channels, the downstream ports of the gas channels are connected with a gas loop formed by connecting a current limiting hole and a valve in parallel, and the downstream parts of the gas loop is also successively connected with a control apparatus and a gas supply apparatus. The method comprises the following steps: step (b), the control apparatus and the valve are closed; and step (c), the pressure in the gas channel is tested, and when the pressure in the gas channel reaches a first change rate, the de-clamping terminal point is reached. According to the invention, the test of the de-clamping terminal point is more accurate and reliable.
Description
Technical field
The present invention relates to field of semiconductor manufacture, relate in particular to a kind of method of testing substrate de-clamping terminal.
Background technology
Plasma treatment appts utilizes the operation principle of vacuum reaction chamber to carry out the processing of the substrate of semiconductor chip and plasma flat-plate.The operation principle of vacuum reaction chamber is in vacuum reaction chamber, to pass into the reacting gas that contains suitable etching agent source gas, and then this vacuum reaction chamber is carried out to radio-frequency (RF) energy input, with activated reactive gas, excite and maintain plasma, so that respectively the material layer on etching substrate surface or on substrate surface depositing layer of material, and then semiconductor chip and plasma flat-plate are processed.
Plasma process chamber is carried out in processing procedure process substrate, and substrate is arranged on the electrostatic chuck in chamber.Electrostatic chuck below is provided with a DC electrode, can produce an electrostatic attraction after DC electrode has connected power supply, and substrate is held on electrostatic chuck.After processing procedure finishes, DC electrode disconnection is connected with power supply, then substrate is carried out to de-clamping.
Engineer relies on the signal of de-clamping terminal to judge that whether substrate de-clamping is successful, to carry out follow-up a series of activities.
Therefore the judgement accuracy of de-clamping terminal is just particularly important.
Summary of the invention
For the problems referred to above in background technology, the present invention proposes a kind of method of the minimizing particle contamination for multi-chamber plasma treatment appts.
First aspect present invention provides a kind of method of the test substrate de-clamping terminal for plasma process chamber, wherein, in described plasma process chamber, be provided with a base station, described base station comprises electrostatic chuck, described substrate is arranged at electrostatic chuck top, in described base station, be provided with some gas passages, downstream, described gas passage is connected with a gas return path being formed in parallel by metering hole and valve, also be connected with control device and gas supply device in turn in described gas return path downstream, wherein, described method comprises the steps:
Step (b), closes described control device and valve;
Step (c), tests the pressure in described gas passage, has reached de-clamping terminal in the time that the pressure in described gas passage reaches the first rate of change within the very first time.
Further, also comprise before step (a) in step (b): open described valve and control device, make described gas supply device continue supply gas substrate back is produced to the power of a de-clamping.
Further, be also in series with a pressure test meter before described gas return path, it is in order to test the pressure in described gas passage.
Further, described plasma process chamber also comprises several elevate a turnable ladder thimbles, it is arranged among described base station movably, wherein, also comprise afterwards step (d) in described step (c), promote described several elevate a turnable ladder thimbles to apply an elevate a turnable ladder power to substrate back, it is promoted to and exceedes described electrostatic chuck.
Further, described plasma process chamber also comprises a drive unit, and it is in order to drive described elevate a turnable ladder thimble to move.
Further, described drive unit comprises cylinder or motor.
Further, in the chamber sidewall of described plasma process chamber, be also provided with a transmission window, described chamber outside is also provided with a manipulator, wherein, described step (d) also comprises step (e) afterwards: described manipulator stretches into chamber interior by described transmission window, and moves to described substrate top.
Further, also comprise afterwards step (f) in described step (e): load described substrate to described manipulator, described manipulator transfers out chamber by substrate by described transmission gate.
Further, the span of the described very first time is 1 second to 3 seconds.
Further, the span of described the first rate of change is more than 30%.
Further, described method also comprises the steps: to determine according to gas flow required in described gas passage and/or flow velocity the aperture of described metering hole.
De-clamping terminal test mechanism provided by the invention is more accurately reliable.
Brief description of the drawings
Fig. 1 is the structural representation of the gas supply system for plasma process chamber of prior art;
Fig. 2 is according to the structural representation of the gas supply system for plasma process chamber of a specific embodiment of the present invention;
Fig. 3 is according to the flow chart of steps of the test substrate de-clamping terminal method for plasma process chamber of a specific embodiment of the present invention;
Fig. 4 is prior art and technique effect comparison diagram of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
Fig. 1 is the structural representation of the gas supply system for plasma process chamber of prior art.As shown in Figure 1, in plasma chamber 100, pass into process gas, process gas is owing to having passed into the radio-frequency (RF) energy generation plasma that is excited, with such as, to being positioned over substrate 101 on electrostatic chuck 102 be correlated with processing procedure, etching and deposition etc.The air supply system that prior art provides comprises some gas passages 103, and gas passage 103 is in series with control device 105 and gas supply device 106 further successively.Wherein, feeder 106 is for continuing supply gas.Also be provided with a valve 107 in control device 105 upstreams.
After processing procedure, gas supply device 106 continues supply gas, and control device 105 is opened the path of itself and gas supply device 106.Now, valve 107 is also opened.Thereby gas enters gas passage 103, the top of some gas passages 103 respectively has a shower nozzle, and gas sprays to substrate back 101a by shower nozzle, makes it slowly depart from electrostatic chuck 102 substrate 101 is produced to a power.
When the test substrate de-clamping terminal of prior art, it is gas-tight in processing procedure or before de-clamping, seeing as with electrostatic chuck 102 due to substrate 101, and therefore now the pressure in gas passage is very large.But, when the shower nozzle that is subject to gas passage 103 when substrate 101 sprays to the power of γ-ray emission of substrate back 101a, depart from gradually electrostatic chuck 102.Generally, once be greater than a scheduled time for the gas duration of de-clamping, think and carried out de-clamping step.Then, shutoff control unit 105 is to cut off the air feed of gas supply device 106, and valve-off 107, catches de-clamping terminal, once capture de-clamping terminal, has thought de-clamping success.But, once between substrate 101 and electrostatic chuck 102 due to the elevate a turnable ladder power effect of γ-ray emission start depart from, gas in a large number from substrate 101 bottoms reveal, the pressure in gas passage 103 rapid drawdown is 0, this is considered to the signal of de-clamping terminal.But, sometimes just between substrate 101 and electrostatic chuck 102, produce space and completed de-clamping not yet completely, therefore de-clamping terminal is now inaccurate.
The present invention is exactly in order accurately to test de-clamping terminal.Fig. 2 is according to the structural representation of the gas supply system for plasma process chamber of a specific embodiment of the present invention.Plasma process chamber 200 has a process chambers (not shown), and process chambers is essentially cylindricality, and process chambers sidewall perpendicular, has the top electrode (not shown) and the bottom electrode that are arranged in parallel in process chambers.Conventionally, the region between top electrode and bottom electrode is processing region 204, this region 204 by formation high-frequency energy to light and to maintain plasma.Above electrostatic chuck 202, place substrate 201 to be processed, this substrate 201 can be the glass plate of waiting to want the semiconductor chip of etching or processing or treating to be processed into flat-panel monitor.Wherein, described electrostatic chuck 202 is for clamping substrate.Reacting gas is input in process chambers from gas source (not shown), one or more radio-frequency power supply (not shown) can be applied to individually on bottom electrode or be applied to respectively on top electrode and bottom electrode simultaneously, in order to radio-frequency power is transported on bottom electrode or top electrode and bottom electrode on, thereby produce large electric field process chambers is inner.Most of electric field lines are comprised in the processing region 204 between top electrode and bottom electrode, and this electric field accelerates the electronics that is present on a small quantity process chambers inside, make it the gas molecule collision with the reacting gas of inputting.These collisions cause the ionization of reacting gas and exciting of plasma, thereby produce plasma in process chambers.The neutral gas molecule of reacting gas has lost electronics in the time standing these highfields, leaves the ion of positively charged.The ion of positively charged accelerates towards bottom electrode direction, is combined with the neutral substance in processed substrate, excites substrate processing, i.e. etching, deposit etc.Certain suitable position in plasma process chamber 200 is provided with exhaust gas region, exhaust gas region and external exhaust apparatus are (not shown, for example vacuum pump pump) be connected, in order to extract the reacting gas of using and bi-product gas out chamber in processing procedure.Wherein, plasma confinement ring (not shown) is arranged at electrostatic chuck 202 peripheries, for by plasma confinement in processing region 204.
As shown in Figure 2, the invention provides a kind of for plasma process chamber by the feeder of substrate de-clamping, wherein, in described plasma process chamber 200, be provided with a base station, described base station comprises electrostatic chuck 202, described substrate 201 is arranged at electrostatic chuck 202 tops, and wherein, described feeder is arranged at the below of described substrate 201.Described air supply system comprises at least one gas passage 203, and it is arranged in described base station main body, for holding gas.Described gas passage 205 is connected with a control device 205.The downstream of control device 205 is connected with a gas supply device 206, and it can provide gas, and is conveyed into described gas passage 203.Each described gas passage 203 has a fumarole, and it can blow the gas in described gas passage 203 between described substrate bottom surface 201a and described electrostatic chuck 202.
Wherein, be also connected with a gas return path in described control device 205 upstreams, this loop comprises metering hole in parallel (orifice) 209 and valve 207.The characteristic of metering hole 209 is, its pressure and flow are directly proportional, and the pressure ratio of its upstream and downstream must be to exceed 2 times.Restriction orifice can be used as flow measuring element and is used for measuring flow, also can be used as restricting element and is used for limited flow rate and reduce pressure.Have certain pressure reduction, the fluid metering hole of flowing through before and after the metering hole, for certain aperture, the flow of the metering hole of flowing through is along with pressure reduction increases and increases.But in the time that pressure reduction exceedes a certain numerical value (being called critical pressure differential), at this moment, no matter how pressure reduction increases, the flow of the metering hole of flowing through will maintain certain numerical value and no longer increase.Current limliting metering hole limits the flow of fluid and reduces pressure according to this principle.Therefore,, no matter how the upstream pressure of metering hole changes, its gas flow rate that flows through metering hole is determined.So just avoid gas to occur the situation that flow or flow velocity increase suddenly at short notice.
Fig. 3 is according to the flow chart of steps of the test substrate de-clamping terminal method for plasma process chamber of a specific embodiment of the present invention.Below as shown in Figure 3, in conjunction with Fig. 2, the method for a kind of test substrate de-clamping terminal for plasma process chamber provided by the invention is described in detail, wherein, described method comprises the steps:
First perform step S2, close described control device 205 and valve 207.Generally, once be greater than a scheduled time for the gas duration of de-clamping, think and carried out de-clamping step, wherein, in the present embodiment, the described gas for de-clamping typically is helium.After having carried out de-clamping step, just control device 205 and valve 207 need to be closed, to cut off the continuation air feed of gas supply device 206.
Then perform step S3, test the pressure in described gas passage 203, wherein, the pressure in gas passage 203 is signifying flow and the flow velocity of helium in passage now.In the time that 203 pressure in described gas passage reaches the first rate of change within the very first time, think and reached de-clamping terminal.
Particularly, after shutoff control unit 205 and valve 209, in the pipeline between gas return path and control device 205, be also full of helium.Between substrate back 201a and classical family dish 202, start to depart from and start to reveal after helium, progressively light leak of the helium of 203 spouts from gas return path to cooling duct, because valve 207 is closed, in the pipeline of helium in pipeline between gas return path and control device 205 before adding to gas return path lentamente by metering hole 209, because metering hole 209 can limit flow velocity and the flow of helium, the helium that therefore can also maintain in the short time is supplied with.At this moment, if there is the halfway situation of substrate de-clamping of the prior art, also can rely on the helium sustainable supply in the short time can continue to provide an elevate a turnable ladder power to substrate bottom surface 201a, continue de-clamping.
Further, before step S2, also comprise step S1: after processing procedure finishes, keep the unlatching of described valve 207 and control device 205, make described gas supply device 206 continue supply helium, helium passes through the shower nozzle of gas passage 203 to blowing between substrate back 201a and electrostatic chuck 202, so that substrate 201 back sides are produced to a de-clamping power from bottom to top.
Wherein, as shown in Figure 2, be also in series with a pressure test meter 212 before the gas return path being formed in parallel by metering hole 209 and valve 207, it can test the pressure in described gas passage 203.As for the 26S Proteasome Structure and Function existing ripe technical support in the prior art of pressure testing machine, therefore, for brevity, repeat no more herein.
Further, described plasma process chamber 200 also comprises several elevate a turnable ladder thimbles 211, it is arranged among described base station movably, described elevate a turnable ladder thimble 211 can move and be promoted to down in the vertical direction and exceed electrostatic chuck 202, drives thus substrate 201 further after de-clamping, to depart from electrostatic chuck.Wherein, after described step S3, also comprise step S4, promote described several elevate a turnable ladder thimbles 211 to apply an elevate a turnable ladder power to substrate back 201a, it is promoted to and exceedes described electrostatic chuck 202.
Further, described plasma process chamber 200 also comprises a drive unit 210, and it can drive described elevate a turnable ladder thimble 211 to move.Typically, described drive unit 211 comprises cylinder or motor.
Further, be also provided with a transmission window (not shown) in the chamber sidewall of described plasma process chamber 200, it passes in and out chamber for substrate transport 201.In addition, described chamber outside is also provided with a manipulator (not shown), and it is as the carrier of substrate transport.Wherein, after described step S4, also comprise step S5: described manipulator stretches into chamber interior by described transmission window, and moves to described substrate 101 tops.
Then, execution step S6: load described substrate to described manipulator, described manipulator transfers out chamber by substrate by described transmission gate.
Wherein, the span of the described very first time is 1 to 3 second.The span of described the first rate of change is more than 30%.For example, when pressure reached 31%, 32%, 35%, 40%, 45%, 50%, 63%, 74%, 78%, 80% in 1 second, 1.1 seconds, 1.3 seconds, 1.5 seconds, 2 seconds, 2.3 seconds, 2.38 seconds, 2.7 seconds, 2.8 seconds, 3 seconds, when 98% Equal variation, think the condition of de-clamping terminal of having reached.
Further, described method also comprises the steps: to determine according to gas flow required in described gas passage and/or flow velocity the aperture of described metering hole.Engineer can be configured metering hole according to processing procedure is required, and low being easy to of metering hole cost simple in structure replaced.
Fig. 4 is prior art and technique effect comparison diagram of the present invention, and wherein, ordinate represents the air pressure of helium in cooling pipe, and abscissa represents the time, and upper figure represents the technique effect of prior art, and figure below represents technique effect of the present invention.As shown in Figure 4, for example prior art and the present invention helium air pressure in gas passage before de-clamping is all 10Torr, in prior art due to metering hole not being set, therefore as long as substrate and electrostatic chuck start to depart from and cause after helium leakage to a certain degree, air pressure reduces to 0 from 10Torr at once, system thinks and received the signal of de-clamping terminal, but also has the now not de-clamping success of certain probability, and therefore de-clamping terminal is now inaccurate.Review prior art, due to the setting of limited discharge orifice therefore the helium between control device 205 and gas return path can also slowly supplement, for continuing to provide the elevate a turnable ladder power of de-clamping, even if therefore there is the incomplete situation of previously described de-clamping, also can rely on this supplementary helium to continue de-clamping, as shown in the figure, after the helium air pressure in gas passage slowly reduces, just suddenly drag down, the de-clamping endpoint signal now receiving should be accurately and effectively.Therefore, de-clamping terminal test mechanism of the present invention is more reliable compared with prior art.
Although content of the present invention has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.Read after foregoing those skilled in the art, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (11)
1. the method for the test substrate de-clamping terminal of plasma process chamber, wherein, in described plasma process chamber, be provided with a base station, described base station comprises electrostatic chuck, described substrate is arranged at electrostatic chuck top, in described base station, be provided with some gas passages, downstream, described gas passage is connected with a gas return path being formed in parallel by metering hole and valve, also be connected with control device and gas supply device in turn in described gas return path downstream, wherein, described method comprises the steps:
Step (b), closes described control device and valve;
Step (c), tests the pressure in described gas passage, has reached de-clamping terminal in the time that the pressure in described gas passage reaches the first rate of change within the very first time.
2. method according to claim 1, it is characterized in that, also comprise before step (a) in step (b): open described valve and control device, make described gas supply device continue supply gas substrate back is produced to the power of a de-clamping.
3. method according to claim 1 and 2, is characterized in that, is also in series with a pressure test meter before described gas return path, and it is in order to test the pressure in described gas passage.
4. method according to claim 3, it is characterized in that, described plasma process chamber also comprises several elevate a turnable ladder thimbles, it is arranged among described base station movably, wherein, also comprise afterwards step (d) in described step (c), promote described several elevate a turnable ladder thimbles to apply an elevate a turnable ladder power to substrate back, it is promoted to and exceedes described electrostatic chuck.
5. method according to claim 4, is characterized in that, described plasma process chamber also comprises a drive unit, and it is in order to drive described elevate a turnable ladder thimble to move.
6. method according to claim 5, is characterized in that, described drive unit comprises cylinder or motor.
7. method according to claim 4, it is characterized in that, in the chamber sidewall of described plasma process chamber, be also provided with a transmission window, described chamber outside is also provided with a manipulator, wherein, described step (d) also comprises step (e) afterwards: described manipulator stretches into chamber interior by described transmission window, and moves to described substrate top.
8. method according to claim 7, is characterized in that, also comprises afterwards step (f) in described step (e): load described substrate to described manipulator, described manipulator transfers out chamber by substrate by described transmission gate.
9. method according to claim 1, is characterized in that, the span of the described very first time is 1 second to 3 seconds.
10. method according to claim 1, is characterized in that, the span of described the first rate of change is more than 30%.
11. methods according to claim 1, is characterized in that, described method also comprises the steps: to determine according to gas flow required in described gas passage and/or flow velocity the aperture of described metering hole.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310068404.XA CN104037045B (en) | 2013-03-04 | 2013-03-04 | The method of test substrate de-clamping terminal |
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| CN201310068404.XA CN104037045B (en) | 2013-03-04 | 2013-03-04 | The method of test substrate de-clamping terminal |
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| CN104037045B CN104037045B (en) | 2016-05-11 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI611504B (en) * | 2015-12-29 | 2018-01-11 | 中微半導體設備（上海）有限公司 | Plasma etching device, wafer lifting device and lifting method thereof |
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|---|---|---|---|---|
| EP1118425A2 (en) * | 2000-01-21 | 2001-07-25 | Applied Materials, Inc. | Method and apparatus for dechucking a workpiece from an electrostatic chuck |
| CN101202212A (en) * | 2006-12-11 | 2008-06-18 | 爱德牌工程有限公司 | Substrate damage prevention system and method |
| CN101872733A (en) * | 2009-04-24 | 2010-10-27 | 中微半导体设备(上海)有限公司 | System and method for sensing and removing residual charge of processed semiconductor process component |
| US20130014371A1 (en) * | 2011-07-12 | 2013-01-17 | Povolny Henry S | Methods of dechucking and system thereof |
-
2013
- 2013-03-04 CN CN201310068404.XA patent/CN104037045B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1118425A2 (en) * | 2000-01-21 | 2001-07-25 | Applied Materials, Inc. | Method and apparatus for dechucking a workpiece from an electrostatic chuck |
| CN101202212A (en) * | 2006-12-11 | 2008-06-18 | 爱德牌工程有限公司 | Substrate damage prevention system and method |
| CN101872733A (en) * | 2009-04-24 | 2010-10-27 | 中微半导体设备(上海)有限公司 | System and method for sensing and removing residual charge of processed semiconductor process component |
| US20130014371A1 (en) * | 2011-07-12 | 2013-01-17 | Povolny Henry S | Methods of dechucking and system thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI611504B (en) * | 2015-12-29 | 2018-01-11 | 中微半導體設備（上海）有限公司 | Plasma etching device, wafer lifting device and lifting method thereof |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |