CN104032284B - The method of the duty of the change-over valve of monitoring deposition apparatus in real time - Google Patents
The method of the duty of the change-over valve of monitoring deposition apparatus in real time Download PDFInfo
- Publication number
- CN104032284B CN104032284B CN201410306456.0A CN201410306456A CN104032284B CN 104032284 B CN104032284 B CN 104032284B CN 201410306456 A CN201410306456 A CN 201410306456A CN 104032284 B CN104032284 B CN 104032284B
- Authority
- CN
- China
- Prior art keywords
- pressure
- change
- deposition apparatus
- over valve
- time
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Details Of Valves (AREA)
- Indication Of The Valve Opening Or Closing Status (AREA)
Abstract
The present invention provides the method for the duty of the change-over valve of a kind of real-time monitoring deposition apparatus, including step: the pressure in the process cavity of deposition apparatus was evacuated to before the step of depositing technics base pressure, and is completely closed by its choke valve；The pre-helium flowing big flow also directly gets around process cavity by change-over valve, and helium is directly pumped away；Pressure in the pressure detecting system characterization processes cavity of deposition apparatus；If pressure has the situation steeply risen compared to base pressure, then assert change-over valve existing problems, otherwise assert that change-over valve state is normal.The method of the present invention can be integrated among whole process menu, can detect before the execution of depositing technics each time one time, thus realize monitoring in real time the duty of change-over valve, and can find in time when this change-over valve generation problem, improve the stability of technique, decrease the yield loss thereby resulted in.
Description
Technical field
The present invention relates to semiconductor manufacturing facility technical field, in particular it relates to a kind of monitoring in real time
The method of the duty of the change-over valve of deposition apparatus.
Background technology
In current semiconductor technology, all Pyrex (BSG), phosphorosilicate glass (PSG) and boron phosphorus silicon
Glass (BPSG) technique, before deposit thin film, all can need the gas used when the back of deposit is by reaction
Body carries out pre-stream in advance, so that keep stablizing of technique the initial of deposit.Due to flowing in advance when, gas
Body is just the same with the when of deposit, therefore to prevent gas from reacting in advance, can pass through a change-over valve
These gases are directly got around process cavity, is directly pumped away.Owing to the pressure of process cavity now is by saving
Stream valve automatically controls, and technique is under the pressure of hundreds of torr (torr) is carried out, so once this reversal valve
There is problem in door, process gas will be caused to flow into cavity, and equipment (board) cannot detect in time, causes being formed sediment
Long-pending film quality goes wrong.
Summary of the invention
The technical problem to be solved is to provide the work of the change-over valve of a kind of real-time monitoring deposition apparatus
The method of state, it is possible to find in time when change-over valve generation problem, improves the stability of technique and thus reduces
The yield loss caused.
For solving above-mentioned technical problem, the present invention provides the work of the change-over valve of a kind of real-time monitoring deposition apparatus
The method of state, including step:
Before the step of depositing technics, the pressure in the process cavity of described deposition apparatus is evacuated to base pressure, and will
Its choke valve completely closes；
The pre-helium flowing big flow also directly gets around described process cavity by described change-over valve, and described helium is straight
Connect and be pumped away；
The pressure detecting system of described deposition apparatus detects the pressure in described process cavity；If described pressure is compared
There is the situation steeply risen in described base pressure, then assert that described change-over valve has problems, otherwise assert described commutation
Valve state is normal.
Alternatively, the pressure limit in described base pressure refers to described process cavity is 0～30 millitorrs.
Alternatively, the helium of described big flow refers to that the flow of described helium is at more than 3000sccm.
Alternatively, the situation steeply risen described in refers to that, within the detection time of described pressure, described pressure is from institute
State base pressure and rise to hundreds of millitorr.
Alternatively, the described detection time is 3 seconds.
Alternatively, described deposition apparatus is the deposition apparatus serial for CENTURA of company of Applied Materials.
Alternatively, described deposition apparatus system PSG, BSG and/or BPSG's in back segment interconnection process is thin
Film depositing technics.
Alternatively, described method can be integrated among the menu of whole depositing technics, in every wafer
Perform one time before the step of described depositing technics.
Compared with prior art, the invention have the advantages that
1. the step that the method increases the most only needs short several seconds (such as 3 seconds), so to production capacity almost
Not impact.
2. the wafer that can will appear from exception and scrap controls at 1, substantially increases yield.
3. improvements introduced is without increasing other parts of appliance, and cost is the lowest.
Sum it up, the method for the present invention can be integrated among whole process menu, deposit work each time
Can detect before the execution of skill one time, thus reach to monitor in real time the duty of change-over valve, and at this
Can find in time during change-over valve generation problem, improve the stability of technique, decrease the yield thereby resulted in and damage
Lose.
Accompanying drawing explanation
The above and other features of the present invention, character and advantage will be by below in conjunction with the accompanying drawings and embodiment
Description and become readily apparent from, wherein:
Fig. 1 is the method for the duty of the change-over valve of the deposition apparatus of monitoring in real time of one embodiment of the invention
Schematic flow sheet.
Detailed description of the invention
Below in conjunction with specific embodiments and the drawings, the invention will be further described, elaborates in the following description
More details so that fully understanding the present invention, but the present invention obviously can be different from that this describes with multiple its
Its mode is implemented, those skilled in the art can in the case of intension of the present invention according to reality application feelings
Condition is made similar popularization, is deduced, the most should be with content constraints protection scope of the present invention of this specific embodiment.
Fig. 1 is the method for the duty of the change-over valve of the deposition apparatus of monitoring in real time of one embodiment of the invention
Schematic flow sheet.This deposition apparatus can be the deposition apparatus of the CENTURA series of company of Applied Materials,
May be used for the film deposition art of PSG, BSG and/or BPSG in back segment interconnection process.As it is shown in figure 1,
This monitoring method can mainly comprise the steps:
Step S101 is first carried out, by the pressure in the process cavity of deposition apparatus before the step of depositing technics
It is evacuated to base pressure, and its choke valve is completely closed.
In the present embodiment, the pressure limit in this base pressure refers to process cavity is 0～30 millitorrs (mtorr).
Then performing step S102, the pre-helium flowing big flow also directly gets around process cavity by change-over valve,
Helium is directly pumped away.
In the present embodiment, the helium of this big flow refer to the flow of helium at least at more than 3000sccm, such as
4000sccm, 5000sccm, the peak of this flow is limited by the structure of deposition apparatus.
Finally perform step S103, the pressure in the pressure detecting system characterization processes cavity of deposition apparatus.Now,
If pressure has the situation steeply risen compared to base pressure, then assert change-over valve existing problems, otherwise assert reversal valve
Door state is normal.
In the present embodiment, this situation steeply risen may refer within the detection time of pressure, and for example, 3
Second, the pressure in process cavity rises to hundreds of millitorr from base pressure.
The method of the present invention can be integrated among the menu of whole depositing technics, in the shallow lake of every wafer
Perform one time before the step of long-pending technique.Owing under normal circumstances, this process cavity is at vacuum (pressure is 0)
Under, do not interfere with follow-up state of the art in this approach, follow-up deposit is not resulted in any impact yet.
In sum, compared with prior art, the invention have the advantages that
1. the step that the method increases the most only needs short several seconds (such as 3 seconds), so to production capacity almost
Not impact.
2. the wafer that can will appear from exception and scrap controls at 1, substantially increases yield.
3. improvements introduced is without increasing other parts of appliance, and cost is the lowest.
Sum it up, the method for the present invention can be integrated among whole process menu, deposit work each time
Can detect before the execution of skill one time, thus reach to monitor in real time the duty of change-over valve, and at this
Can find in time during change-over valve generation problem, improve the stability of technique, decrease the yield thereby resulted in and damage
Lose.
Although the present invention is open as above with preferred embodiment, but it is not for limiting the present invention, any ability
Field technique personnel without departing from the spirit and scope of the present invention, can make possible variation and amendment.Therefore,
Every content without departing from technical solution of the present invention, according to appointing that above example is made by the technical spirit of the present invention
What amendment, equivalent variations and modification, within each falling within the protection domain that the claims in the present invention are defined.
Claims (5)
1. a method for the duty of the change-over valve of real-time monitoring deposition apparatus, including step:
Before the step of depositing technics, the pressure in the process cavity of described deposition apparatus is evacuated to base pressure, and will
Its choke valve completely closes；
The pre-helium flowing big flow also directly gets around described process cavity by described change-over valve, and described helium is straight
Connect and be pumped away；
The pressure detecting system of described deposition apparatus detects the pressure in described process cavity；If described pressure is compared
There is the situation steeply risen in described base pressure, then assert that described change-over valve has problems, otherwise assert described commutation
Valve state is normal；Wherein, the pressure limit in described base pressure refers to described process cavity is 0～30 millitorrs；Institute
The helium stating big flow refers to that the flow of described helium is at more than 3000sccm；The described situation steeply risen refers to
Within the detection time of described pressure, described pressure rises to hundreds of millitorr from described base pressure.
Method the most according to claim 1, it is characterised in that the described detection time is 3 seconds.
Method the most according to claim 2, it is characterised in that described deposition apparatus is Applied Materials
The deposition apparatus of the CENTURA series of company.
Method the most according to claim 3, it is characterised in that described deposition apparatus system interconnects for back segment
The film deposition art of PSG, BSG and/or BPSG in technique.
Method the most according to claim 4, it is characterised in that described method can be integrated into whole shallow lake
Among the menu of long-pending technique, performed one time before the step of the described depositing technics of every wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410306456.0A CN104032284B (en) | 2014-06-30 | 2014-06-30 | The method of the duty of the change-over valve of monitoring deposition apparatus in real time |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410306456.0A CN104032284B (en) | 2014-06-30 | 2014-06-30 | The method of the duty of the change-over valve of monitoring deposition apparatus in real time |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104032284A CN104032284A (en) | 2014-09-10 |
| CN104032284B true CN104032284B (en) | 2017-01-04 |
Family
ID=51463272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410306456.0A Active CN104032284B (en) | 2014-06-30 | 2014-06-30 | The method of the duty of the change-over valve of monitoring deposition apparatus in real time |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104032284B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113416944B (en) * | 2021-06-22 | 2022-04-19 | 江苏微导纳米科技股份有限公司 | Coating equipment and working method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201089795Y (en) * | 2007-08-20 | 2008-07-23 | 中芯国际集成电路制造(上海)有限公司 | Reversing arrangement having shut unclosed prompt facility |
| CN101469418A (en) * | 2007-12-29 | 2009-07-01 | 沈阳中科博微自动化技术有限公司 | Control method for plasma reinforced chemical meteorology deposition apparatus |
| CN102362342A (en) * | 2009-03-24 | 2012-02-22 | 朗姆研究公司 | Method and apparatus for reduction of voltage potential spike during dechucking |
| CN103060776A (en) * | 2012-12-27 | 2013-04-24 | 河北工业大学 | A constant temperature system for a heating stage |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5337185B2 (en) * | 2011-03-11 | 2013-11-06 | 株式会社東芝 | Pressure control device |
-
2014
- 2014-06-30 CN CN201410306456.0A patent/CN104032284B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201089795Y (en) * | 2007-08-20 | 2008-07-23 | 中芯国际集成电路制造(上海)有限公司 | Reversing arrangement having shut unclosed prompt facility |
| CN101469418A (en) * | 2007-12-29 | 2009-07-01 | 沈阳中科博微自动化技术有限公司 | Control method for plasma reinforced chemical meteorology deposition apparatus |
| CN102362342A (en) * | 2009-03-24 | 2012-02-22 | 朗姆研究公司 | Method and apparatus for reduction of voltage potential spike during dechucking |
| CN103060776A (en) * | 2012-12-27 | 2013-04-24 | 河北工业大学 | A constant temperature system for a heating stage |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104032284A (en) | 2014-09-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10663336B2 (en) | Processing chamber gas detection system and operation method thereof | |
| CN208517524U (en) | Nitride deposition boiler tube | |
| US20150311100A1 (en) | Load port unit and efem system | |
| CN107742603A (en) | A kind of crystal silicon solar battery graphite boat and its saturated process method | |
| TWI673433B (en) | Method and apparatus for adjusting operating parameters of a vacuum pump arrangement | |
| CN104032284B (en) | The method of the duty of the change-over valve of monitoring deposition apparatus in real time | |
| CN104282519B (en) | The clean method of plasma processing apparatus | |
| US20150311091A1 (en) | Substrate etching method | |
| CN102243670A (en) | Method and system for generating semiconductor process formula | |
| WO2013006241A2 (en) | Pedestal with edge gas deflector for edge profile control | |
| CN105088173B (en) | A kind of semiconductor equipment | |
| US11911809B2 (en) | Preventive maintenance method for chamber of metal etching machine | |
| AU2017389285B2 (en) | Method for manufacturing vinyl chloride-based resin for preventing scale deposition | |
| TWI621193B (en) | Processing chamber air detection system and operation method thereof | |
| CN103137536B (en) | Semiconductor machining system | |
| CN107591344B (en) | Process chamber atmosphere detection method and wafer processing equipment | |
| CN101593724A (en) | Through hole formation method | |
| CN112992672B (en) | Preparation method of silicon-based silicon dioxide back sealing film | |
| CN102347207B (en) | System for plasma process | |
| CN207587702U (en) | Semiconductor equipment | |
| CN106711282A (en) | Film refractive index acquisition method and film refractive index acquisition device | |
| CN107863304B (en) | Method for detecting particle pollutants on surface of electrostatic chuck | |
| US20150187562A1 (en) | Abatement water flow control system and operation method thereof | |
| CN115373232B (en) | Wafer photoresist removing equipment and method | |
| WO2011071069A1 (en) | Method for cleaning film forming apparatus, film forming method, and film forming apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 200233, No. 385 Rainbow Road, Shanghai, Xuhui District Patentee after: SHANGHAI ADVANCED SEMICONDUCTO Address before: 200233, No. 385 Rainbow Road, Shanghai, Xuhui District Patentee before: ADVANCED SEMICONDUCTOR MANUFACTURING Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210425 Address after: 200120 No.600 Yunshui Road, Pudong New Area, Shanghai Patentee after: Shanghai Jita Semiconductor Co.,Ltd. Address before: 200233, No. 385 Rainbow Road, Shanghai, Xuhui District Patentee before: SHANGHAI ADVANCED SEMICONDUCTO |