CN104022160A - Zinc-oxide-based semiconductor material and thin film transistor doped with high-valence transition metal - Google Patents
Zinc-oxide-based semiconductor material and thin film transistor doped with high-valence transition metal Download PDFInfo
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- CN104022160A CN104022160A CN201410278159.XA CN201410278159A CN104022160A CN 104022160 A CN104022160 A CN 104022160A CN 201410278159 A CN201410278159 A CN 201410278159A CN 104022160 A CN104022160 A CN 104022160A
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 142
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 71
- 239000004065 semiconductor Substances 0.000 title claims abstract description 60
- 239000000463 material Substances 0.000 title claims abstract description 44
- 150000003624 transition metals Chemical class 0.000 title claims abstract description 14
- 229910052723 transition metal Inorganic materials 0.000 title claims abstract description 13
- 229960001296 zinc oxide Drugs 0.000 title abstract description 63
- 239000010409 thin film Substances 0.000 title abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 230000001052 transient effect Effects 0.000 claims description 28
- 229910052750 molybdenum Inorganic materials 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 230000004888 barrier function Effects 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 8
- 238000002360 preparation method Methods 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000011888 foil Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 36
- 239000010936 titanium Substances 0.000 description 17
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 16
- 239000011733 molybdenum Substances 0.000 description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 238000012546 transfer Methods 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000004630 atomic force microscopy Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- -1 grid Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
- H01L29/227—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a zinc-oxide-based semiconductor material doped with high-valence transition metal. The zinc-oxide-based semiconductor material is doped with the high-valence transition metal. The invention further discloses a zinc-oxide-based thin film transistor doped with the high-valence transition metal. The zinc-oxide-based thin film transistor comprises a grid electrode, a semiconductor channel layer, an insulation layer, a source electrode and a drain electrode, wherein the semiconductor channel layer is made of the zinc-oxide-based semiconductor material doped with the high-valence transition metal. The thin film transistor is high in carrier mobility and bias voltage stability, capable of being made with a simple method, high in controllable degree, low in cost, capable of being produced on a large scale, high in repeatability, and environmentally friendly.
Description
Technical field
The present invention relates to the transient metal doped Zinc oxide based semiconductor material of a kind of high valence state, and thin-film transistor using this material as channel layer, technical field of semiconductors belonged to.
Background technology
Thin-film transistor is a kind of field-effect semiconductor device, comprises grid, semiconductor channel layer, insulating barrier and source-drain electrode part, and wherein semiconductor channel layer is most important to device performance.At present, for commercial thin-film transistor, semiconductor channel layer wherein mainly adopts amorphous silicon and polycrystalline SiTFT.The feature of amorphous silicon is good uniformity, be applicable to large area preparation, but its mobility is very low, is generally less than 1 cm
2/ Vs, has seriously hindered the further lifting of thin-film transistor performance.The mobility of polycrystalline SiTFT increases, but its preparation temperature is high, lack of homogeneity prepared by large area.In addition, amorphous silicon and polycrystalline SiTFT are all to photaesthesia, and under illumination condition, device performance can great changes will take place.Therefore, in flat panel display, need to introduce black matrix, significantly reduced the aperture opening ratio of display device, increased preparation technology's complexity and cost.
Transparent oxide semiconductor is as one of thin-film-transistor material, be subject to attracting attention of researcher and display screen production firm, be expected to develop into that efficiency is higher, the emerging electron trade of cheaper, its range of application is quite extensive, comprises many-sided fields such as flat-panel monitor, mobile phone display screen, flexible electronic paper.Transparent oxide material is generally wide-band gap material, and energy gap is greater than 3 eV, is transparent semi-conducting material in visible-range.In the metal-oxide semiconductor (MOS) of current research, be able to broad research taking indium gallium zinc oxide as the multi-element metal oxide of representative.But content is rare on earth due to indium, gallium, bring on the contrary the strategy of resource to grab problem.Therefore searching substitutes indium, gallium element Zinc oxide based semiconductor material has very important scientific meaning and commercial value.
Summary of the invention
In order to address the above problem, the object of the present invention is to provide the transient metal doped Zinc oxide based semiconductor material of a kind of high valence state.
It is a kind of with the transient metal doped Zinc oxide based film transistor of high valence state that another object of the present invention is also to provide, taking the transient metal doped Zinc oxide based semiconductor material of above-mentioned high price state as channel layer, thin-film transistor carrier mobility of the present invention is high, good stability.
For achieving the above object, the present invention adopts following technical scheme:
The Zinc oxide based semiconductor material that high valence state is transient metal doped, the high valence state transition metal that adulterates in Zinc oxide-base material, its composition is M
xzn
1-xo, wherein, M is Ti or Mo, x=0.002～0.035.
The transient metal doped Zinc oxide based film transistor of a kind of high valence state, comprise substrate, grid, semiconductor channel layer, insulating barrier, source electrode and drain electrode, insulating barrier is between grid and semiconductor channel layer, and source electrode and drain electrode are connected on respectively the two ends of semiconductor channel layer; Described semiconductor channel layer material is the transient metal doped Zinc oxide based semiconductor material of high valence state claimed in claim 1.
The Zinc oxide based film transistor transient metal doped according to described high valence state, the preparation method of described semiconductor channel layer is: in vacuum degree≤2 × 10
-4in the vacuum chamber of Pa, high-purity high valence state tinsel is placed on high-purity zinc oxide target surface as composite ceramics target, utilize the area of the paillon foil of high valence state transition metal to carry out controlled doping concentration, under high-purity argon gas atmosphere, air pressure is under 0.1～0.6 Pa condition, magnetron sputtering plating, sputtering power is 50～120 watts, sputter growth temperature is 100～200 DEG C, sputter thickness is 10～50 nm, can obtain semiconductor channel layer, utilize mask plate that sputtered film is separated and is deposited as (500 ~ 550) μ m × (500 ~ 550) μ m fritter.
The Zinc oxide based film transistor transient metal doped according to described high valence state, described grid material is heavily doped P type silicon, resistivity≤0.05 Ω cm doublely does substrate.
The Zinc oxide based film transistor transient metal doped according to described high valence state, described insulating barrier is silicon dioxide, thickness is 90～120 nm; Prepare by thermal oxidation process.
The Zinc oxide based film transistor transient metal doped according to described high valence state, described source electrode and drain material are Cr and Au; Plate successively Cr and Au by vacuum thermal evaporation method, mask method is shaped.
the positive beneficial effect of the present invention
The present invention is taking zinc-oxide film as basic material, at a small amount of high valence state transition metal (titanium or molybdenum) of film the inside doping, utilize feature and thermally-stabilised high feature thereof that high valence state transition metal valence electron number is many, improve mobility and the stability of Zinc oxide based film transistor.
Thin-film transistor carrier mobility of the present invention is promoted to 15.8 cm
2/ Vs (0.5% is titanium doped), 13.8 cm
2/ Vs (0.2% molybdenum doping), switch current ratio is higher than 10
5, bias stability is promoted, and wherein, the stability of the zinc oxide of 0.2% molybdenum doping significantly promotes.
The present invention directly adopts high valence state transition metal and zinc oxide composite target rf magnetron sputtering, and preparation method is simple, and controllable degree is high, with low cost, can large area produce in batches, repeatable high, environmental friendliness.
Brief description of the drawings
Fig. 1 is the transient metal doped Zinc oxide based film transistor schematic cross-section of high valence state;
Fig. 2 is respectively Doped with Titanium 0%(comparative example), 0.5%(embodiment 1), 2%(embodiment 2) and 3.5%(embodiment 3) the transfer characteristic curve of zinc oxide thin-film transistor;
Fig. 3 is Doped with Titanium 0%(comparative example), 0.5%(embodiment 1), 2%(embodiment 2) and 3.5%(embodiment 3) mobility and the threshold value evolution curve of zinc oxide thin-film transistor;
Fig. 4 is doping molybdenum 0%(comparative example), 0.2%(embodiment 4), 0.4%(embodiment 5) and 0.6%(embodiment 6) the transfer characteristic curve of zinc oxide thin-film transistor;
Fig. 5 is doping molybdenum 0%(comparative example), 0.2%(embodiment 4), 0.4%(embodiment 5) and 0.6%(embodiment 6) zinc oxide thin-film transistor mobility and threshold value evolution curve;
Fig. 6 is the output characteristic curve of the zinc oxide thin-film transistor of embodiment 1 Doped with Titanium 0.5%;
Fig. 7 is the adulterate output characteristic curve of zinc oxide thin-film transistor of molybdenum 0.2% of embodiment 4;
Fig. 8 is the adulterate atomic force microscopy of Zinc oxide based film transistor film of 0.5% titanium of embodiment 1;
Fig. 9 is the adulterate atomic force microscopy of Zinc oxide based film transistor film of 0.2% molybdenum of embodiment 4;
Figure 10 is the atomic force microscopy of the original Zinc oxide based film transistor film of comparative example;
Figure 11 is embodiment 1 Zinc oxide based film transistor, the embodiment 4 of the 0.5% titanium original Zinc oxide based film crystal of Zinc oxide based film transistor, comparative example of the 0.2% molybdenum threshold voltage shift curve over time under-20V voltage that adulterates that adulterates;
Figure 12 is embodiment 1 the adulterate threshold voltage shift of the original Zinc oxide based film transistor of Zinc oxide based film transistor, comparative example under the 40V voltage curve over time of 0.2% molybdenum of Zinc oxide based film transistor, the embodiment 4 of 0.5% titanium that adulterates;
Figure 13 is the adulterate back bias voltage stress test (V of zinc oxide thin-film transistor of 0.2% molybdenum of embodiment 4
g=-20V) transfer characteristic evolution curve chart in time;
Figure 14 is the adulterate positive bias stress test (V of zinc oxide thin-film transistor of 0.2% molybdenum of embodiment 4
g=40V) transfer characteristic evolution curve chart in time.
Embodiment
Below in conjunction with some specific embodiments, the present invention is further described.
Embodiment 1:
Referring to Fig. 2,3,6,8,11 and 12.
The transient metal doped Zinc oxide based film transistor of a kind of high valence state, comprise grid, semiconductor channel layer, insulating barrier, source electrode and drain electrode, described semiconductor channel layer material is the transient metal doped Zinc oxide based semiconductor material of high valence state, and described semi-conducting material composition is M
xzn
1-xo, wherein, M is Ti, x=0.005.
Described grid material is heavily doped P type silicon, and resistivity≤0.05 Ω cm doublely does substrate.
Described insulating barrier is silicon dioxide, and thickness is 90～120 nm; Prepare by thermal oxidation process.
Described source electrode and drain material are Cr and Au; Plate successively Cr and Au by vacuum thermal evaporation method, mask method is shaped.
The preparation method of described semiconductor channel layer is: in vacuum degree≤2 × 10
-4in the vacuum chamber of Pa, high-purity high valence state tinsel is placed on high-purity zinc oxide target surface as composite ceramics target, utilize the area of the paillon foil of high valence state transition metal to carry out controlled doping concentration, under high-purity argon gas atmosphere, air pressure is under 0.1～0.6 Pa condition, magnetron sputtering plating, sputtering power is 50～120 watts, sputter growth temperature is 100～200 DEG C, sputter thickness is 10～50 nm, can obtain semiconductor channel layer, utilize mask plate that sputtered film is separated and is deposited as (500 ~ 550) μ m × (500 ~ 550) μ m fritter.
Embodiment 2
Referring to figure referring to Fig. 2 and 3.
The present embodiment is identical with the general principle of embodiment 1, and some is different: described semiconductor channel layer material is the transient metal doped Zinc oxide based semiconductor material of high valence state, and described semi-conducting material composition is M
xzn
1-xo, wherein, M is Ti, x=0.02.
Embodiment 3
Referring to figure referring to Fig. 2 and 3.
The present embodiment is identical with the general principle of embodiment 1, and some is different: described semiconductor channel layer material is the transient metal doped Zinc oxide based semiconductor material of high valence state, and described semi-conducting material composition is M
xzn
1-xo, wherein, M is Ti, x=0.035.
Embodiment 4:
Referring to Fig. 4,5,7,9,11,12,13 and 14.
The present embodiment is identical with the general principle of embodiment 1, and some is different: described semiconductor channel layer material is the transient metal doped Zinc oxide based semiconductor material of high valence state, and described semi-conducting material composition is M
xzn
1-xo, wherein, M is Mo, x=0.002.
Embodiment 5
Referring to figure referring to Figure 4 and 5.
The present embodiment is identical with the general principle of embodiment 1, and some is different: described semiconductor channel layer material is the transient metal doped Zinc oxide based semiconductor material of high valence state, and described semi-conducting material composition is M
xzn
1-xo, wherein, M is Mo, x=0.004.
Embodiment 6
Referring to figure referring to Figure 4 and 5.
The present embodiment is identical with the general principle of embodiment 1, and some is different: described semiconductor channel layer material is the transient metal doped Zinc oxide based semiconductor material of high valence state, and described semi-conducting material composition is M
xzn
1-xo, wherein, M is Mo, x=0.006.
Comparative example
Referring to Fig. 2,3,4,5,10,11 and 12.
The present embodiment is identical with the general principle of embodiment 1, and some is different: described semiconductor channel layer material is the Zinc oxide based semiconductor material of any metal of undoping.
interpretation of result
The meaning of each label representative in Fig. 1: 1-grid, 2-insulating barrier, 3-channel layer, 4-source/drain, 5-drain/source.
From Fig. 2 and 3, along with the doping content of Ti increases, the threshold value of Zinc oxide based film transistor, to negative direction skew, shows that Zinc oxide based semiconductor material changes to conductor; Simultaneously the field-effect mobility of device is issued to extreme value in the doping content of 0.5% Ti, and doping content increases and means that charge carrier increases subsequently, and mobility declines.
From Figure 4 and 5, along with the doping content of Mo increases, the threshold value of Zinc oxide based film transistor, to positive direction skew, shows that Zinc oxide based semiconductor material changes to insulator; Simultaneously the field-effect mobility of device is issued to extreme value in the doping content of 0.2% Mo, and doping content increases subsequently, and mobility declines.
Zinc oxide based film transistor from the Mo doping of the Ti of Fig. 6 and 7,0.5% and 0.2% presents the work of N-shaped channel enhancement mode, and under high drain voltage, electric current is saturation condition, means that the charge carrier of whole channel layer exhausts completely.
From Fig. 8～10, by suitable doping content, the film surface of the Zinc oxide based film transistor of 0.5% titanium that adulterates or 0.2% molybdenum is comparatively smooth, is grains, it is large that crystal grain after doping becomes, and crystalline state improves compared with the original Zinc oxide based film of comparative example.
From Figure 11 and 12, after deviated stress effect 5 h, threshold drift amount approaches saturated, and the Zinc oxide based film transistor of doping 0.2% molybdenum presents good bias stability.
From Figure 13 and 14, the Zinc oxide based film transistor transfer curve of 0.2% molybdenum that adulterates under deviated stress effect presents and not significantly distortion simple mobile along grid voltage axle, owing in channel layer or interface electric charge by temporary transient catching.
Therefore, after zinc-oxide film by the high valence state transition metal of suitable concn (0.5% titanium or 0.2% molybdenum) doping, improved the electric property of raw films, and its bias stability is increased dramatically, wherein, the zinc oxide films membrane stability of the molybdenum of doping 0.2% lifting effect is the most obvious.
Claims (6)
1. the transient metal doped Zinc oxide based semiconductor material of high valence state, is characterized in that, the high valence state transition metal that adulterates in Zinc oxide-base material, and its composition is M
xzn
1-xo, wherein, M is Ti or Mo, x=0.002～0.035.
2. the Zinc oxide based film transistor that high valence state is transient metal doped, it is characterized in that, comprise grid, semiconductor channel layer, insulating barrier, source electrode and drain electrode, insulating barrier is between grid and semiconductor channel layer, and source electrode and drain electrode are connected on respectively the two ends of semiconductor channel layer; Described semiconductor channel layer material is the transient metal doped Zinc oxide based semiconductor material of high valence state claimed in claim 1.
3. the transient metal doped Zinc oxide based film transistor of high valence state according to claim 2, is characterized in that, the preparation method of semiconductor channel layer is: in vacuum degree≤2 × 10
-4in the vacuum chamber of Pa, high-purity high valence state tinsel is placed on high-purity zinc oxide target surface as composite ceramics target, utilize the area of the paillon foil of high valence state transition metal to carry out controlled doping concentration, under high-purity argon gas atmosphere, air pressure is under 0.1～0.6 Pa condition, magnetron sputtering plating, sputtering power is 50～120 watts, sputter growth temperature is 100～200 DEG C, sputter thickness is 10～50 nm, can obtain semiconductor channel layer, utilize mask plate that sputtered film is separated and is deposited as (500 ~ 550) μ m × (500 ~ 550) μ m fritter.
4. the transient metal doped Zinc oxide based film transistor of high valence state according to claim 2, is characterized in that, described grid material is heavily doped P type silicon.
5. the transient metal doped Zinc oxide based film transistor of high valence state according to claim 2, is characterized in that, described insulating barrier is silicon dioxide, and thickness is 90～120 nm.
6. the transient metal doped Zinc oxide based film transistor of high valence state according to claim 2, is characterized in that, described source electrode and drain material are Cr and Au; Plate successively Cr and Au by vacuum thermal evaporation method, mask method is shaped.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410278159.XA CN104022160B (en) | 2014-06-20 | 2014-06-20 | The transient metal doped Zinc oxide based semiconductor material of high-valence state and thin film transistor (TFT) |
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|---|---|---|---|
| CN201410278159.XA CN104022160B (en) | 2014-06-20 | 2014-06-20 | The transient metal doped Zinc oxide based semiconductor material of high-valence state and thin film transistor (TFT) |
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| CN104022160B CN104022160B (en) | 2017-04-05 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104716195A (en) * | 2015-03-13 | 2015-06-17 | 北京大学 | Molybdenum-doped zinc oxide thin film transistor and preparation method thereof |
| CN105742189A (en) * | 2016-01-27 | 2016-07-06 | 苏州翠南电子科技有限公司 | Fabrication method of oxide semiconductor thin film transistor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110101365A1 (en) * | 2009-10-30 | 2011-05-05 | Samsung Electronics Co., Ltd. | Electronic device including graphene thin film and methods of fabricating the same |
| CN103258743A (en) * | 2012-02-15 | 2013-08-21 | 乐金显示有限公司 | Thin film transistor, thin film transistor array substrate and method of fabricating same |
-
2014
- 2014-06-20 CN CN201410278159.XA patent/CN104022160B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110101365A1 (en) * | 2009-10-30 | 2011-05-05 | Samsung Electronics Co., Ltd. | Electronic device including graphene thin film and methods of fabricating the same |
| CN103258743A (en) * | 2012-02-15 | 2013-08-21 | 乐金显示有限公司 | Thin film transistor, thin film transistor array substrate and method of fabricating same |
Non-Patent Citations (2)
| Title |
|---|
| ZHIHUA YONG 等: "Ti-doped ZnO thin films prepared at different ambient conditions: electronic structures and magnetic properties", 《MATERIALS》 * |
| 王三波: "直流反应磁控溅射法制备新型透明导电ZnO:Mo薄膜的研究", 《工程科技I辑》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104716195A (en) * | 2015-03-13 | 2015-06-17 | 北京大学 | Molybdenum-doped zinc oxide thin film transistor and preparation method thereof |
| CN105742189A (en) * | 2016-01-27 | 2016-07-06 | 苏州翠南电子科技有限公司 | Fabrication method of oxide semiconductor thin film transistor |
| WO2017128836A1 (en) * | 2016-01-27 | 2017-08-03 | 苏州翠南电子科技有限公司 | Preparation method for oxide semiconductor thin film transistor |
| CN105742189B (en) * | 2016-01-27 | 2019-07-23 | 青岛中微创芯电子有限公司 | A kind of preparation method of oxide semiconductor thin-film transistor |
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| CN104022160B (en) | 2017-04-05 |
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