CN104021881B - A kind of doping transfer method reducing Graphene sheet resistance - Google Patents
A kind of doping transfer method reducing Graphene sheet resistance Download PDFInfo
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- CN104021881B CN104021881B CN201410243559.7A CN201410243559A CN104021881B CN 104021881 B CN104021881 B CN 104021881B CN 201410243559 A CN201410243559 A CN 201410243559A CN 104021881 B CN104021881 B CN 104021881B
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 136
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 134
- 239000012528 membrane Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000003153 chemical reaction reagent Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 12
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 22
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 22
- -1 polyethylene terephthalate Polymers 0.000 claims description 19
- 239000000203 mixture Substances 0.000 claims description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N HCl Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 11
- GRYLNZFGIOXLOG-UHFFFAOYSA-N nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 11
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 10
- 239000002585 base Substances 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- LYGJENNIWJXYER-UHFFFAOYSA-N Nitromethane Chemical compound C[N+]([O-])=O LYGJENNIWJXYER-UHFFFAOYSA-N 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 239000011780 sodium chloride Substances 0.000 claims description 6
- 238000004528 spin coating Methods 0.000 claims description 6
- NMCUIPGRVMDVDB-UHFFFAOYSA-L Iron(II) chloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 claims description 5
- VSCWAEJMTAWNJL-UHFFFAOYSA-K Aluminium chloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 claims description 4
- 239000004698 Polyethylene (PE) Substances 0.000 claims description 4
- 239000004743 Polypropylene Substances 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 4
- 229920000573 polyethylene Polymers 0.000 claims description 4
- 229920001155 polypropylene Polymers 0.000 claims description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 4
- ZXMGHDIOOHOAAE-UHFFFAOYSA-N 1,1,1-trifluoro-N-(trifluoromethylsulfonyl)methanesulfonamide Chemical compound FC(F)(F)S(=O)(=O)NS(=O)(=O)C(F)(F)F ZXMGHDIOOHOAAE-UHFFFAOYSA-N 0.000 claims description 3
- 229960000935 Dehydrated Alcohol Drugs 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000741 silica gel Substances 0.000 claims description 3
- 229910002027 silica gel Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- NBBCSVFUAZCEJU-UHFFFAOYSA-N Auric chloride Chemical compound [Cl-][Cl-][Au+3][Cl-] NBBCSVFUAZCEJU-UHFFFAOYSA-N 0.000 claims description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L Copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 2
- FDWREHZXQUYJFJ-UHFFFAOYSA-M Gold(I) chloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N HF Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L Zinc chloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 claims description 2
- 239000002390 adhesive tape Substances 0.000 claims description 2
- UXVMQQNJUSDDNG-UHFFFAOYSA-L cacl2 Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 claims description 2
- 239000001110 calcium chloride Substances 0.000 claims description 2
- 229910001628 calcium chloride Inorganic materials 0.000 claims description 2
- 238000005286 illumination Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000011592 zinc chloride Substances 0.000 claims description 2
- 235000005074 zinc chloride Nutrition 0.000 claims description 2
- 239000007921 spray Substances 0.000 claims 2
- 241001597008 Nomeidae Species 0.000 claims 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 34
- 239000010408 film Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 11
- 239000010409 thin film Substances 0.000 description 10
- 239000011575 calcium Substances 0.000 description 7
- 239000002253 acid Substances 0.000 description 6
- 150000001336 alkenes Chemical class 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 150000003839 salts Chemical class 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000004575 stone Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002203 pretreatment Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- 239000002841 Lewis acid Substances 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atoms Chemical group C* 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Abstract
The invention discloses a kind of doping transfer method reducing Graphene sheet resistance.The present invention utilizes doping reagent to be doped the graphene film on transfer membrane, is then transferred in target substrate by the graphene film after doping, the step for of repetition, shifts at least two-layer graphene film.Wherein the Graphene on transfer membrane can also undope, or uses different doping reagent, carries out the repeatedly transfer of different permutation and combination orders.Can conveniently obtain large-area low square resistance grapheme material by this method, resulting materials has good electric conductivity and stability, can effectively reduce the problem that after even avoiding the doped transfer of Graphene, sheet resistance decays simultaneously.
Description
Technical field
The invention belongs to transparent conductive film material field, particularly relate to a kind of doping reducing Graphene sheet resistance
Transfer method.
Background technology
Graphene, English name Graphene, is the Colloidal particles that arranges according to hexagonal of carbon atom.
This graphite crystal thin film, after within 2004, being found by the scientist of University of Manchester, just becomes science
Boundary and industrial quarters focus of attention.The thickness of Graphene only has 0.335nm, is not only in known materials the thinnest
One, the most very rigid；As simple substance, the speed that it at room temperature transmits electronics is more all than known
Conductor and quasiconductor all fast, intrinsic mobility can reach 2 × 105cm2/ (V S), the electricity of this excellence
Character makes it have broad application prospects in high-frequency electron device.In order to realize its potential application, primarily
Solve exactly CVD growth Graphene defect easily occurs in transfer process, cause transfer after
The problem that sheet resistance of graphene thin film is higher.
The method that after current solution transfer, sheet resistance of graphene thin film is higher specifically includes that one, by repeatedly shifting
Method fill up once the transfer defect brought of Graphene thus reduce sheet resistance, but, the Graphene of transfer
The number of plies is difficult to the demand reaching device for low square resistance compared with major general, and the transfer number of plies can bring the most again cost to ask
Topic；Two, by the Graphene after transfer being carried out chemical doping reduction sheet resistance, although this method can be effective
Ground reduces the sheet resistance of Graphene, but doping effect is unstable, such as time of repose in high-temperature baking, or air
Under the influence of long grade, adulterant, it may happen that reunite, decomposes, or with the substance reaction in air and the side of making
Resistance deep fades；Three, by growing controlled multi-layer graphene, the defect being likely to result in transfer process is reduced,
And obtain the Graphene of relatively low sheet resistance, but the most perfectly realize controlled Multi layer Growth Graphene and remain one
An individual difficult problem.
Summary of the invention
Defect easily occurs in transfer process, after causing transfer to solve the Graphene of CVD growth
The higher problem of sheet resistance of graphene thin film, the invention provides a kind of doping transfer reducing Graphene sheet resistance
Method.
Technical scheme is as follows:
A kind of doping transfer method reducing Graphene sheet resistance, comprises the following steps:
(1) toast after the graphene film on transfer membrane being carried out；
(2) with doping reagent, the graphene film after baking is doped；
(3) graphene film after doping is carried out pretreatment；
(4) the doping unadulterated or step (3) that step (1) obtains obtained also pretreatment
Graphene film is transferred in target substrate, removes transfer membrane after toasting；
(5) repetition step (1)～step (4) are at least one times.
Its further technical scheme is: the transfer membrane in described step (1) includes base material and glue-line two
Point, described base material is polyethylene, polyethylene terephthalate, polypropylene, polrvinyl chloride or heat release
Adhesive tape；Described glue-line includes PU glue, silica gel or acrylic glue.
Its further technical scheme is: described step (1) is 30 DEG C with the baking temperature in step (4)
～150 DEG C, baking time is 1min～10h.
Its further technical scheme is: the doping reagent in described step (2) includes copper chloride, chlorination
Calcium, auric chloride, iron chloride, sodium chloride, zinc chloride, aluminum chloride, double trifluoromethanesulfonimide and spread out
One in biology, gold chloride, nitric acid, Fluohydric acid., hydrochloric acid, nitromethane, dehydrated alcohol, water or
The mixture of at least two.
Its further technical scheme is: the concentration of the doping reagent in described step (2) is
1mmol/L～1mol/L.
Its further technical scheme is: the doping method in described step (2) include spin coating, spraying,
A kind of or the combination of at least two in spraying, immersion；Doping time is 10s～10min.
Its further technical scheme is: the method for the pretreatment in described step (3) includes baking, blows
Do, dry, dedusting, a kind of or combination of at least two in illumination.
Its further technical scheme is: the target substrate in described step (4) includes soft objectives substrate
Or hard target substrate；Described soft objectives substrate be polyethylene terephthalate, Merlon,
Polypropylene, polrvinyl chloride or polyethylene, described hard target substrate is glass, acrylic board or silicon chip.
The method have the benefit that:
The present invention is to use first doping to retransfer, and the method that doping transfer is combined closely uses different doping
The graphene film etched is doped or undopes by agent respectively, in combination with different arrangement groups
Conjunction mode reduces the sheet resistance of graphene film fast and effectively with repeatedly transfer method and reduces and even avoid declining
Subtract.Mainly have employed sandwich and dopant is clipped in substrate and Graphene or Graphene and Graphene
Between, one is the doping effect different by comprehensive each layer and realizes the rapid decline of overall sheet resistance, and two are
Because dopant is clipped in inside after Zhuan Yi, outside has graphene layer to cover, thus decrease dopant with
Extraneous contact, can effectively reduce and even avoid decay.Use this method only need to shift two to three layers,
The graphene film that sheet resistance is relatively low can be obtained, more than three layers can be shifted according to actual needs, it is thus achieved that sheet resistance
Lower sample.This method suitability is strong, low cost, quickly effective, obtained Graphene shows
Good integrity, electric conductivity and stability.
Accompanying drawing explanation
Fig. 1 is the flow chart of the present invention.
Fig. 2 is the sample sectional view in concrete steps each stage of the present invention, wherein, 1: transfer membrane, 2: stone
Ink alkene thin film, 3: doped layer, 4: target substrate.
Detailed description of the invention
Fig. 1 is the flow chart of the present invention, on transfer membrane the graphene film 2 of 1 through overdoping and pretreatment it
After transfer in target substrate 4, wherein doping and pre-treatment step can omit.Can repeat as required
Repeatedly adulterate transfer process.
Fig. 2 is the sample sectional view in concrete steps each stage of the present invention, and Fig. 2-1 is for being on transfer membrane 1
The schematic diagram of graphene film 2, before doping, it be toasted, main purpose is to remove stone
The moisture of ink alkene remained on surface.The main body of described transfer membrane 1 is made up of base material and glue-line, and base material can be from respectively
Choosing in kind of traditional films, cover one layer of glue-line on base material, the adhesiveness of glue-line makes the transfer membrane can be very
Good plays the effect adhering to Graphene transfer, and described glue-line can use PU glue, silica gel or acrylic
Glue etc..
After baking, as shown in Fig. 2-2, graphene film 2 is doped, obtains doped layer 3.Mix
Miscellaneous reagent can have multiple choices, and the principle of selection is, doping reagent is wanted to increase after graphene-doped
Add the concentration of carrier in Graphene.The general character of selected doping reagent is that they broadly fall into Louis
Acid, described lewis acid be American Physical chemist Louis according to defined in its acid-base theory: acceptable
The material of one electronics pair is acid.The selection of doping reagent is different, but is all electron acceptor, can be real
Now adulterate effect, i.e. can increase the carrier concentration in Graphene, between different doping reagent, take electronics by force
Ability is variant, and effect of adulterating the most exactly is different.
Need to carry out pre-treatment step after doping in order to the doping solvent that removes in doped layer 3,
The character of doping solute can not be affected, it is therefore desirable to select according to the character of concrete solute with solvent simultaneously
The mode of pretreatment, such as may select the means removal solvent of baking for most of dopants, but right
In some dopant, although baking can remove solvent, but solute can go bad, and causes having adulterated effect
Decay, just selects to dry in this case, and the means such as dry up are as preprocessing process.
After pre-treatment step, as Figure 2-3, the thin film after doping is covered target substrate 4
Above, apply certain temperature, promote graphene film 2 and doped layer 3 from transfer membrane 1 to target substrate
The transfer of 4, removes transfer membrane 1, just completes the transfer of a thin film after transfer.Repeat Fig. 2-1 afterwards
To the transfer process of Fig. 2-3, Fig. 2-4 is the schematic diagram that displaced twice graphene film, and Fig. 2-5 is to turn
Move the schematic diagram of three schungite alkene thin film, by that analogy, it is also possible to shift repeatedly graphene film.Whole
In the transfer process of individual graphene film, the doping shown in Fig. 2-2 and preprocessing process can omit, and only make
Shift with unadulterated graphene film.
In Fig. 2-4, if the graphene film of two kinds of different doping reagent doping is designated as A, B, no respectively
The graphene film of doping is designated as N, then the compound mode of the two-layer graphene film in target substrate is
A-B, B-A, A-N, N-A, B-N, N-B or N-N；In figs. 2-5, three layers of graphite in target substrate
The compound mode of alkene thin film is A-A-A, B-B-B, N-N-N, A-A-B, A-B-A, B-A-A, A-B-B,
B-A-B、B-B-A、A-A-N、A-N-A、N-A-A、A-N-N、N-A-N、N-N-A、B-B-N、B-N-B、
N-B-B, B-N-N, N-B-N, N-N-B, A-B-N, A-N-B, N-B-A, N-A-B, B-N-A or B-A-N；
If shifting the graphene film of more than three layers, the compound mode of the multi-layer graphene thin film in target substrate is with this
Analogize.
Four embodiments presented below:
Embodiment 1
1, by putting into the transfer membrane/Graphene of salt acid etch, deionized water washes away graphenic surface absorption
Impurity.Dry up after taking-up, 80 DEG C of baking 15min, obtain transfer membrane/Graphene；
2, the 1mol/L prepared with iron chloride and nitromethane adulterates reagent (being designated as Fe) to transfer membrane/stone
Ink alkene doping, doping way is spraying 2min, then 50 DEG C of baking 3min, and dedusting obtains transfer membrane/Graphene
/Fe；The 1mmol/L prepared with calcium chloride and dehydrated alcohol adulterates reagent (being designated as Ca) to transfer membrane/graphite
Alkene adulterates, and doping way is spraying 10min, then dries and dedusting obtains transfer membrane/Graphene/Ca；
3, on transfer membrane/Graphene/Fe to glass, glass/Fe/ Graphene/transfer membrane, 80 DEG C of bakings are obtained
15min, takes out and takes transfer membrane off, obtain glass/Fe/ Graphene；
4, on the glass/Fe/ Graphene in transfer membrane/Graphene/Ca to step 3,90 DEG C of baking 20min,
Transfer membrane is taken in taking-up off, obtains glass/Fe/ Graphene/Ca/ Graphene；
The sheet resistance using Fe-Ca combination gained sample is 100 Ω/, transmitance 87.0% (400～800nm),
Standing 100h in air, sheet resistance is 101 Ω/, the most undamped.
Embodiment 2
1, by putting into the transfer membrane/Graphene of salt acid etch, deionized water washes away graphenic surface absorption
Impurity.Dry up after taking-up, 150 DEG C of baking 1min, obtain transfer membrane/Graphene；
2, with the 500mmol/L doping examination of double trifluoromethanesulfonimide (TFSA) and nitromethane preparation
Agent (being designated as TFSA) is to transfer membrane/Graphene doping, and doping way is spraying 2min, then 50 DEG C of bakings
3min, dedusting obtains transfer membrane/Graphene/TFSA；
3, transfer membrane/Graphene/TFSA (being designated as TFSA) is transferred on acrylic board, obtains acrylic board/TFSA/
Graphene/transfer membrane, 90 DEG C of baking 20min, take out and take transfer membrane off, obtain acrylic board/TFSA/ Graphene；
4, on the acrylic board/TFSA/ Graphene in transfer membrane/Graphene/TFSA to step 3,90 DEG C of bakings
Roasting 20min, takes out and takes transfer membrane off, obtain acrylic board/TFSA/ Graphene/TFSA/ Graphene；
The sheet resistance using TFSA-TFSA combination gained sample is 150 Ω/, transmitance 88.0% (400～800
Nm), standing 100h in air, sheet resistance is 152 Ω/, the most undamped.
Embodiment 3
1, by putting into the transfer membrane/Graphene of salt acid etch, deionized water washes away graphenic surface absorption
Impurity.Dry up after taking-up, 30 DEG C of baking 10h, obtain transfer membrane/Graphene；
2,100mmol/L doping reagent (being designated as Fe) prepared with iron chloride and nitromethane to transfer membrane/
Graphene adulterates, and doping way is spin coating 30s, then 50 DEG C of baking 3min, and dedusting obtains transfer membrane/graphite
Alkene/Fe；The 100mmol/L prepared with hydrochloric acid and water adulterates reagent (being designated as HCl) to transfer membrane/Graphene
Doping, doping way is spin coating 30s, then dries and dedusting obtains transfer membrane/Graphene/Ca；
3, on transfer membrane/Graphene/Fe to polyethylene terephthalate (being designated as PET), PET/Fe/ is obtained
Graphene/transfer membrane, 90 DEG C of baking 20min, take out and take transfer membrane off, obtain PET/Fe/ Graphene；
4, on the PET/Fe/ Graphene in transfer membrane/Graphene/HCl to step 3,90 DEG C of baking 20min,
Transfer membrane is taken in taking-up off, obtains PET/Fe/ Graphene/HCl/ Graphene；
5, on the PET/Fe/ Graphene/HCl/ Graphene in transfer membrane/Graphene/Fe to step 4,90 DEG C
Baking 20min, takes out and takes transfer membrane off, obtain PET/Fe/ Graphene/HCl/ Graphene/Fe/ Graphene；
The sheet resistance using Fe-HCl-Fe combination gained sample is 50 Ω/, transmitance 84.5% (400～800
Nm), standing 100h in air, sheet resistance is 52 Ω/, the most undamped.
Embodiment 4
1, by putting into the transfer membrane/Graphene of salt acid etch, deionized water washes away graphenic surface absorption
Impurity.Dry up after taking-up, 30 DEG C of baking 10h, obtain transfer membrane/Graphene；
2,40mmol/L doping reagent (being designated as Fe) prepared with iron chloride and nitromethane to transfer membrane/
Graphene adulterates, and doping way is spin coating 10s, then 50 DEG C of baking 3min, and dedusting obtains transfer membrane/graphite
Alkene/Fe；The 40mmol/L prepared with nitric acid and water adulterates reagent (being designated as HNO3) to transfer membrane/Graphene
Doping, doping way is spin coating 10s, then dries and dedusting obtains transfer membrane/Graphene/HNO3；
3, on transfer membrane/Graphene/Fe to polyethylene terephthalate (being designated as PET), PET/Fe/ is obtained
Graphene/transfer membrane, 90 DEG C of baking 20min, take out and take transfer membrane off, obtain PET/Fe/ Graphene；
4, on the PET/Fe/ Graphene in transfer membrane/Graphene/HNO3 to step 3,90 DEG C of baking 20min,
Transfer membrane is taken in taking-up off, obtains PET/Fe/ Graphene/HNO3/ Graphene；
5, on the PET/Fe/ Graphene/HNO3/ Graphene in transfer membrane/Graphene/Fe to step 4,90 DEG C
Baking 20min, takes out and takes transfer membrane off, obtain PET/Fe/ Graphene/HNO3/ Graphene/Fe/ Graphene；
6, the PET/Fe/ stone that unadulterated transfer membrane/Graphene (being designated as None) is transferred in step 5 is taken
On ink alkene/HNO3/ Graphene/Fe/ Graphene, 90 DEG C of baking 20min, take out and take transfer membrane off,
PET/Fe/ Graphene/HNO3/ Graphene/Fe/ Graphene/None/ Graphene/；
The sheet resistance using Fe-HNO3-Fe-None combination gained sample is 35 Ω/, transmitance
81% (400～800nm), stand 100h in air, sheet resistance is 35 Ω/, the most undamped.
In aforementioned four embodiment, for making narration simple and clear, by repeatedly transfer process, use different examination
Agent is adulterated and is doped the step of rear pretreatment and merges and write, in actual operating process, according to Fig. 1
Shown in flow process, often transfer one layer need doping Graphene, be required for carrying out the Graphene by transfer membrane
Clean and toast, doping pretreatment, shift and toast the step throwing off transfer membrane.
The transfer by doped or undoped multi-layer graphene can be found out from above four embodiments,
Can ensure that the sheet resistance of sample stands and unattenuated for a long time.
Above-described is only the preferred embodiment of the present invention, the invention is not restricted to above example.Permissible
Understanding, those skilled in the art the most directly derive or associate
The oher improvements and changes arrived, within being all considered as being included in protection scope of the present invention.
Claims (8)
1. the doping transfer method reducing Graphene sheet resistance, it is characterised in that comprise the following steps:
(1) toast after the graphene film on transfer membrane being carried out；
(2) with doping reagent, the graphene film after baking is doped；
(3) graphene film after doping is carried out pretreatment；
(4) the doping unadulterated or step (3) that step (1) obtains obtained also pretreatment
Graphene film is transferred in target substrate, removes transfer membrane after toasting；
(5) repetition step (1)～step (4) are at least one times.
The doping transfer method of reduction Graphene sheet resistance the most according to claim 1, it is characterised in that:
The primary structure of the transfer membrane in described step (1) includes base material and glue-line two parts, and described base material is poly-
Ethylene, polyethylene terephthalate, polypropylene, polrvinyl chloride or heat release adhesive tape；Described glue-line includes
PU glue, silica gel or acrylic glue.
The doping transfer method of reduction Graphene sheet resistance the most according to claim 1, it is characterised in that:
Described step (1) is 30 DEG C～150 DEG C with the baking temperature in step (4), and baking time is 1min～10h.
The doping transfer method of reduction Graphene sheet resistance the most according to claim 1, it is characterised in that:
Doping reagent in described step (2) include copper chloride, calcium chloride, auric chloride, iron chloride, sodium chloride,
Zinc chloride, aluminum chloride, double trifluoromethanesulfonimide and derivant thereof, gold chloride, nitric acid, Fluohydric acid.,
The mixture of a kind of or at least two in hydrochloric acid, nitromethane, dehydrated alcohol, water.
The doping transfer method of reduction Graphene sheet resistance the most according to claim 1, it is characterised in that:
The concentration of the doping reagent in described step (2) is 1mmol/L～1mol/L.
The doping transfer method of reduction Graphene sheet resistance the most according to claim 1, it is characterised in that:
Doping method in described step (2) include spin coating, spray, spray, soak in one or at least
The combination of two kinds；Doping time is 10s～10min.
The doping transfer method of reduction Graphene sheet resistance the most according to claim 1, it is characterised in that:
The method of the pretreatment in described step (3) includes toasting, dries up, dries, dedusting, in illumination one
Plant or the combination of at least two.
The doping transfer method of reduction Graphene sheet resistance the most according to claim 1, it is characterised in that
The primary structure of the target substrate in described step (4) includes soft objectives substrate or hard target substrate；
Described soft objectives substrate be polyethylene terephthalate, Merlon, polypropylene, polrvinyl chloride or
Polyethylene, described hard target substrate is glass, acrylic board or silicon chip.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410243559.7A CN104021881B (en) | 2014-06-03 | A kind of doping transfer method reducing Graphene sheet resistance |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410243559.7A CN104021881B (en) | 2014-06-03 | A kind of doping transfer method reducing Graphene sheet resistance |
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| CN104021881A CN104021881A (en) | 2014-09-03 |
| CN104021881B true CN104021881B (en) | 2016-11-30 |
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Citations (6)
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