CN104021836B - Metal wire for solar cell back electrode and preparation method thereof, back electrode and preparation method thereof, solar cell sheet and cell assembly - Google Patents
Metal wire for solar cell back electrode and preparation method thereof, back electrode and preparation method thereof, solar cell sheet and cell assembly Download PDFInfo
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- CN104021836B CN104021836B CN201310063800.3A CN201310063800A CN104021836B CN 104021836 B CN104021836 B CN 104021836B CN 201310063800 A CN201310063800 A CN 201310063800A CN 104021836 B CN104021836 B CN 104021836B
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Abstract
The invention provides a metal wire for a solar cell back electrode; the metal wire comprises a solid round wire and inorganic glass powder solid state object wrapping on an outer surface of the round wire; the solid round wire is made of pure pin metal or tin alloy. The invention also provides a preparation method of the metal wire, a back electrode prepared by the metal wire, a preparation method of the back electrode, and a solar cell sheet and a solar cell assembly containing the back electrode. The back electrode for the crystalline silica solar cell is simple in preparation technology, has excellent clunging force with an AL-BSF, high welding intensity with a photovoltaic solder strip; photoelectric conversion efficiency of the cell can be improved; no silver slurry is needed in the back electrode preparation, thereby effectively reducing material cost of the electrode.
Description
Technical field
The invention belongs to area of solar cell, more particularly, to a kind of back electrode of solar cell tinsel and preparation side
Method, back electrode and preparation method, solar battery sheet and battery component.
Background technology
The crystal silicon solar energy battery that maturation is commercially produced at present is simple with its technological process, and transformation efficiency is high, is easy to
The advantages of large-scale production, develops rapidly, and such battery occupies the share of more than the 80% of photovoltaic market amount of batteries.The sun
Can battery be expected to become the mainstay of future electrical energy supply.The method of the making crystalline silicon solar battery electrode of business at present
It is metallization process, that is, adopt the method for silk screen printing to print 2-3 bar back silver paste in the shady face of silicon chip, dry, then again
In whole shady face (except the region of printing back silver paste) the printing back aluminum slurry of battery, dry, then the phototropic face print in battery
Brush phototropic face silver paste, then burning freezing of a furnace first drying sintering form.The program forms the back of the body after shady face silver paste zone sintering
Face electrode, forms front electrode after phototropic face silver paste zone sintering, process is simple is ripe.But, the electricity at the positive back side of the program
, all using the electrocondution slurry of argentiferous, therefore, material cost is of a relatively high for polar curve.How to adopt non-silver material as the conduction of battery
Electrode, and keep the performances such as good conduction, attachment, welding, remain the focus of current crystalline silicon solar battery electrode research.
Cn 102194898a patent discloses a kind of electric-conducting nickel paste of silion cell front electrode, and its conductive material is whole
It is made up of nikel powder although this slurry does not adopt argentum powder, material cost can be substantially reduced, but the electric conductivity of nickel is far below silver, and
And the adhesive force of nickel metal and silicon bad mixes the heavy doping silica flour of 0.1-20% improving in the slurry although mentioning in patent
Silicon and the adhesive force of nickel, but in cell piece common metal metallization processes, silica flour can not melt and provide this effect, and this slurry
In sintering, metallic nickel may form doping in the phototropic face of battery and destroy the pn-junction of battery, thus affecting the light of battery material
Photoelectric transformation efficiency.
Content of the invention
The present invention be solve existing solaode conductive electrode slurry be silver paste, high cost, optoelectronic transformation efficiency are low
Technical problem, provide the high non-silver material of a kind of low cost, optoelectronic transformation efficiency back electrode of solar cell tinsel and
Preparation method, back electrode and preparation method, solar battery sheet and battery component.
The invention provides a kind of back electrode of solar cell tinsel, this tinsel includes filled circles silk and is wrapped in
The unorganic glass powder solids of circle silk outer surface；Described filled circles silk is pure tin metal or tin alloy.
Present invention also offers a kind of back electrode of solar cell of the present invention preparation method wiry, the party
Method is: then filled circles silk will be passed through by unorganic glass slurry material pond by pure tin metal or tin alloy cold drawn one-tenth filled circles silk,
Make its periphery parcel last layer unorganic glass slurry material, then drying；Described unorganic glass slurry material includes unorganic glass
Powder, organic binder bond and organic solvent.
Present invention also offers a kind of back electrode of solar cell, described back electrode is formed for tinsel fusion coating；Its
In, described tinsel is tinsel of the present invention.
Present invention also offers a kind of preparation method of back electrode of solar cell, the method is to be heated to aluminum back surface field
250-300 DEG C, under inert atmosphere protection or vacuum state, tinsel is heated at 600-700 DEG C, make metal and inorganic
Glass dust melts and mixes, and molten mixture is coated on aluminum back surface field surface, and cooling obtains back electrode, and described tinsel is this
The described tinsel of invention.
Present invention also offers a kind of solar battery sheet, including silicon chip, the back of the body electric field positioned at silicon chip back side, it is located at back of the body electricity
Back electrode on field and the anelectrode being located at front side of silicon wafer, described back electrode is back electrode of solar cell of the present invention.
Present invention also offers a kind of solar module, described solar module includes the back of the body stacking gradually
Plate, sealant layer, cell piece, sealant layer and photic zone, described cell piece is solar battery sheet of the present invention.
The back electrode preparation process is simple for crystal-silicon solar cell of the present invention, good with the adhesive force of aluminum back surface field,
High with the weld strength of photovoltaic welding belt, the photoelectric transformation efficiency of battery increases, and especially back electrode preparation does not use silver paste, effectively
Reduce the material cost of electrode.
Brief description
The cross-sectional structure schematic diagram wiry that Fig. 1 provides for the present invention.
The partial cross-section structural representation of the crystal-silicon solar cell that Fig. 2 present invention provides.
The shady face top view of the crystal-silicon solar cell that Fig. 3 provides for the present invention.
Specific embodiment
In order that technical problem solved by the invention, technical scheme and beneficial effect become more apparent, below in conjunction with
Embodiment, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only in order to explain
The present invention, is not intended to limit the present invention.
The invention provides a kind of back electrode of solar cell tinsel, this tinsel includes filled circles silk and is wrapped in
The unorganic glass powder solids of circle silk outer surface；Described filled circles silk is pure tin metal or tin alloy.
According to back electrode tinsel provided by the present invention, in order to control back electrode band bulk resistor and back electrode metal
With the contact resistance of silicon it is preferable that the weight ratio of circle silk and unorganic glass powder solids is for 5.0-20:1 in described tinsel.
According to back electrode tinsel provided by the present invention it is preferable that described tin alloy be lead, in bismuth, antimony, copper at least
The alloy that a kind of and stannum is collectively forming.For example wherein stannum form by stannum and lead and accounts for 80-90wt%, remaining is lead, also can by stannum, bismuth,
Antimony, copper composition, wherein stannum accounts for 80-90wt%, and bismuth accounts for 2.0-15wt%, and antimony accounts for 0.5-5.0wt%, and copper accounts for 0.2-5.0wt%.
According to back electrode tinsel provided by the present invention, unorganic glass powder is by pbo and b2o3, or bi2o3With
b2o3Composition.Described pbo or bi2o3Content be 65-85wt%.Preferably, also can add in glass dust formula part other
Oxide, such as sio2、al2o3Deng, now, pbo or bi2o3Content can increase, on the basis of the gross weight of unorganic glass powder,
For example consisting of pbo or bi2o3Account for 80-90wt%, b2o3Account for 5-15wt%, sio2Account for 0.2-10wt%, al2o3Account for 0.1-
5.0wt%, zno account for 0.1-5.0wt%.
According to back electrode tinsel provided by the present invention it is preferable that described unorganic glass powder solids are by inorganic
Glass dust slurry is dried and is formed；Described unorganic glass slurry material includes unorganic glass powder, organic binder bond and organic solvent.
According to back electrode tinsel provided by the present invention it is preferable that the particle diameter d of described unorganic glass powder50For 0.1-
10 m, more preferably 0.5-5.0 m.The unorganic glass powder of too big particle diameter may result in filling leakiness in tinsel, impact
The performance of back electrode, too little, cause processing difficulties.
According to back electrode tinsel provided by the present invention it is preferable that the softening temperature of described unorganic glass powder is
200-350 DEG C, more preferably 250-300 DEG C.The softening temperature of unorganic glass powder need to be controlled.When metal-glass vermicelli is existed
When heating melting mixing at 600-700 DEG C, tinsel and unorganic glass powder melt in succession, as too low in glass dust softening temperature or too
Height all may then lead to unorganic glass powder excessive with the melting time point difference of metallic tin, and metallic tin or tin alloy and glass dust melt
Melt mixing uneven, lead to the adhesion performance of back electrode band to decline.
According to back electrode tinsel provided by the present invention it is preferable that the real density of described unorganic glass powder is
4.0-6.0g/cm3.
According to back electrode tinsel provided by the present invention, the peripheral diameter of filled circles silk is too big, then required metal material
Material is many, and the back electrode band being formed is wide, and photovoltaic welding belt can not cover and cause to waste, and in reducing, battery cost is unfavorable；Periphery
Diameter is too little, then to collecting photoproduction stream and unfavorable with the welding of welding.Diameter wiry is too small, then the unorganic glass wrapping up
Powder solid-state slurry is excessive, may result in back electrode band and the contact resistance of silicon to increase, the series resistance of battery increases, and makes wiry
Insufficient strength.Diameter is excessive, and back electrode band then may decline with the adhesive force of silicon.Preferably, described filled circles silk is a diameter of
0.4-3.0mm, tinsel peripheral diameter is 0.5-5.0mm.
Present invention also offers this back electrode of solar cell preparation method wiry, the method is: will be by pure tin
Metal or tin alloy cold drawn one-tenth filled circles silk, then by filled circles silk by unorganic glass slurry pond so as to periphery superscribes
One layer of unorganic glass slurry material, then drying；Described unorganic glass slurry material include unorganic glass powder, organic binder bond and
Organic solvent.
On the basis of the total amount of unorganic glass slurry material, described unorganic glass slurry material consists of: unorganic glass powder
Content is 80-90wt%, and organic binder content is 5.0-15wt%, and organic solvent content is 5.0-15wt%, described organic adhesive
Agent is at least one in ethyl cellulose, butyl cellulose, epoxy resin, alkyd resin and phenolic resin.Described organic molten
Agent is terpineol, dibutyl phthalate, butyl carbitol, Oleum Terebinthinae, butyl glycol ether, butyl carbitol acetate, second
Glycol ether acetate, tributyl citrate, butyl carbitol acetate, dibutyl phthalate and tricresyl phosphate fourth
At least one in ester.
The unorganic glass powder of the present invention can be prepared can also be commercially available, and the present invention adopts and prepares with the following method.Specifically: adopt
With V-shaped mixer, the oxide powder of each composition glass dust is closed uniformly, proceed in corundum crucible, be placed in silicon carbide rod furnace.
500-550 DEG C will be warming up in silicon carbide rod furnace, be incubated 0.5-1.0h, then be warming up to 1250-1300 DEG C, be incubated 1-2h, water quenching
Filter obtains bead.Then bead is loaded ball grinder, in mass ratio zirconia ball: bead: deionized water=4:1-2:
0.5-0.7,300-350 rev/min of tank speed, wet grinding 5.0-7.0h, filter post-drying, then the 0.5-1.0h that dry grinds, aoxidize during dry grinding
Zirconium ball is 1:1-2 with the mass ratio of glass dust.
According to preparation method provided by the present invention it is preferable that the preparation method of described unorganic glass slurry material is: will have
Machine binding agent dissolves in organic solvent, heating for dissolving stirring at 50-80 DEG C, then adds glass dust, and stirring is all
Even obtain final product.
According to preparation method provided by the present invention it is preferable that described drying temperature is 200-300 DEG C, drying time is
2.0-10 minute.
Present invention also offers a kind of back electrode of solar cell, described back electrode is formed for tinsel fusion coating；Its
In, described tinsel is tinsel of the present invention.
The unorganic glass slurry material of the present invention belongs to very strongly adherent viscous fluid, when solid silk passes through slurry pool,
Slurry is easy to cover its periphery, its organic solvent volatilization after drying, obtains being enclosed with unorganic glass powder and organic binder bond
Tinsel.When preparing back electrode band, tinsel is heated at 600-700 DEG C, is wrapped in the organic binder bond outside tinsel
Then there is melting mixing in volatilization, metal and unorganic glass powder, mixture is coated on aluminum back surface field surface, and cooling obtains back of the body electricity
Pole.Metal tape is bonded together by the unorganic glass powder being wherein scattered in metal with aluminum back surface field, and metal tape forms the conduction of electric current
Passage, metal of the present invention contains more multicomponent stannum, its good welding performance with photovoltaic welding belt, and weld strength is high, and, compares biography
System is compared using silk-screen printing technique, and the back electrode band of the present invention is formed in aluminum back surface field, the increase of back surface field area, therefore battery
Photoelectric transformation efficiency has also been lifted.
The width of the back electrode band of the present invention is 2.0-10, thickness is 5.0-50 m.Back electrode band can be that segmentation divides
Cloth or continuous distribution, can be 2-4 bars on whole back surface field surface.
Present invention also offers a kind of preparation method of back electrode of solar cell, the method is to be heated to aluminum back surface field
250-300 DEG C, under inert atmosphere protection or vacuum state, tinsel is heated at 600-700 DEG C, make metal and nothing
Machine glass dust melts and mixes, and molten mixture is coated on aluminum back surface field surface, and cooling obtains back electrode, and described tinsel is
Tinsel of the present invention.
The concrete preparation method of this back electrode is: after silicon wafer wool making, pn-junction processed, coated with antireflection film, in whole shady face
Using silk screen printing back field aluminum paste and after drying, republish front side silver paste, after process of passing through tunnel stove sintering, possessed back of the body aluminum field
Solar cell piece with positive electricity polar curve., then it is heated to 250-300 by preparing the cell piece that aluminum back surface field is with phototropic face electrode
DEG C, under inert atmosphere protection or vacuum state, metal-silk is heated at 600-700 DEG C and melts and mix, by mixed liquor
Using the gap otch extrusion of square, and it is coated on aluminum back surface field surface, after cooling, form back electrode.The present invention adopts indifferent gas
The reason body is protected is: in order to prevent the stannum in metal-glass vermicelli from the molten state and coating back of the body electric field surface not
Cooling molten tin film, is reacted formation stannum oxide with the oxygen of in the air, thus leading to the decline of back electrode performance.
Present invention also offers a kind of solar battery sheet, including silicon chip, the back of the body electric field positioned at silicon chip back side, it is located at back of the body electricity
Back electrode on field and the anelectrode being located at front side of silicon wafer, described back electrode is back electrode of solar cell of the present invention.
Present invention also offers a kind of solar module, described solar module includes the back of the body stacking gradually
Plate, sealant layer, cell piece, sealant layer and photic zone, described cell piece is solar battery sheet of the present invention.
As Figure 1-3, wherein 1 is metal part, and 2 is unorganic glass powder solids, and 3 (include inorganic for back electrode band
Glass dust), 4 is aluminum back surface field, and 5 is silicon substrate.
It is following that by embodiment, the present invention is described further.
Embodiment 1
1st, the preparation of unorganic glass slurry
(1) preparation of glass dust
Using bi2o3And b2o3The system of composition, takes the bi of 84wt%2o3And 16wt%b2o3, using the mixing of V-shaped mixer all
Even, load in porcelain crucible, porcelain crucible is placed in silicon carbide rod furnace, heat up and be preheating to 550 DEG C of insulation 0.5h, then rise to 1250 DEG C of meltings
0.5h, water quenching is filtered, and will obtain bead and load ball grinder, and control mass ratio, zirconia ball: bead: deionized water=4:
1:0.7, tank speed 300/ minute, ball milling 6h, filter post-drying, then the 1h that dry grinds, the mass ratio of zirconia ball and glass dust during dry grinding
For 1:2, obtain glass dust.After tested, the d of this glass dust50For 2.50, softening point () it is 260 DEG C.Real density is 5.64
g/cm3.
(2) preparation of glass powder paste
Take 85wt% unorganic glass powder, 10wt% organic binder bond ethyl cellulose, 5.0wt% organic solvent, organic solvent is
The weight such as terpineol and butyl carbitol mixing composition.Organic binder bond is dissolved in organic solvent, 60Lower heating, makes
It fully dissolves and stirs, and then adds glass dust, stirs and obtain final product.
2nd, preparation wiry
The metal bar cold drawn one-tenth filled circles silk that pure tin casting is formed, while cold drawn, in the periphery bag of filled circles silk
Wrap up in last layer unorganic glass slurry material, then drying.A diameter of 2.0mm of the filled circles silk of the present embodiment, outside tinsel
Enclose a diameter of 3.0mm.
3rd, the preparation of solar cell
Using polysilicon chip specification be: 156 × 156mm, thickness be 200 m (before corrosion).By silicon wafer wool making, pn processed
After knot, coated with antireflection film, adopt silk screen printing back field aluminum paste (the 108c aluminium paste of the large standing grain in Taiwan science and technology) in whole shady face and dry
After dry, republish front side silver paste (the 17a silver paste of dupont company), after process of passing through tunnel stove sintering, possessed back of the body aluminum field and
The cell piece of positive electricity polar curve.Cell piece is heated to 280, under inert atmosphere protection, by the tinsel of the present invention 650
Lower heating melting, makes motlten metal and the mixing of melten glass powder, and it is 4 that mixed liquor is adopted length, width is 5Square
Gap incision pressurizing extrusion, and it is coated on aluminum back surface field surface, form the back electrode band of the present invention after cooling.The back of the body of the present embodiment
Electrode band is continuous band, in whole aluminum back surface field surface distributed three.
The battery sample that the present embodiment obtains is designated as s1.
Embodiment 2
Method according to embodiment 1 prepares crystal-silicon solar cell s2.Difference is: the composition of glass dust accounts for for pbo
82wt%, b2o3Account for 12wt%, sio2Account for 2.0wt%, al2o3Account for 3.0wt%, zno accounts for 1.0wt%.After tested, the d of this glass dust50For
2.50 m, softening point is 290 DEG C.Real density is 5.35g/cm3；Unorganic glass slurry material contains: 80wt% unorganic glass powder,
12wt% organic binder bond butyl cellulose, 8.0wt% organic solvent dibutyl phthalate；Round metal silk by stannum, bismuth, antimony,
The alloy of four kinds of metal compositions of copper, wherein stannum accounts for 80wt%, and bismuth accounts for 15wt%, and antimony accounts for 3.0wt%, and copper accounts for 2.0wt%；The present embodiment
A diameter of 0.5mm of filled circles silk, whole peripheral diameter is 0.7mm.
Embodiment 3
Method according to embodiment 1 prepares crystal-silicon solar cell s3.Difference is: the composition of glass dust accounts for for pbo
65wt%, b2o3Account for 35wt%；After tested, the d of this glass dust50For 0.15 m, softening point is 210 DEG C, and real density is 4.50g/
cm3；Unorganic glass slurry material contains: 90wt% unorganic glass powder, 5.0wt% organic binder bond epoxy resin, and 5.0wt% is organic molten
Agent, organic solvent is the mixed in equal amounts of Oleum Terebinthinae and butyl glycol ether；Round metal silk is accounted for by the alloy of stannum and lead, wherein stannum
85wt%, lead accounts for 15wt%；A diameter of 1.0mm of the filled circles silk of the present embodiment, tinsel peripheral diameter is 2.0mm.
Embodiment 4
Method according to embodiment 1 prepares crystal-silicon solar cell s4.Difference is: the composition of glass dust accounts for for pbo
80wt%, b2o3Account for 15wt%, sio2Account for 2.0wt%, al2o3Account for 1wt%, zno accounts for 2.0wt%；After tested, the d of this glass dust50
For 10 m, softening point is 350 DEG C, and real density is 5.75g/cm3；Unorganic glass slurry material contains: 80wt% unorganic glass powder,
15wt% organic binder bond alkyd resin, 5wt% organic solvent, organic solvent is butyl carbitol acetate, ethylene glycol vinegar
Acid esters and the mixed in equal amounts of tributyl citrate；The alloy that round metal silk is made up of stannum, bismuth, antimony, four kinds of metals of copper, wherein stannum accounts for
85wt%, bismuth accounts for 5wt%, and antimony accounts for 5wt%, and copper accounts for 5wt%.A diameter of 3.0mm of the filled circles silk of the present embodiment, tinsel periphery is straight
Footpath is 5.0mm.
Embodiment 5
Method according to embodiment 1 prepares crystal-silicon solar cell s5.Difference is: the composition of glass dust is bi2o3Account for
80wt%, b2o3Account for 20wt%；After tested, the d of this glass dust50For 5.0 m, softening point is 300 DEG C.Real density is 5.62g/
cm3；Unorganic glass slurry material contains: 82wt% unorganic glass powder, 10wt% organic binder bond phenolic resin, 8wt% organic solvent two
Ethylene glycol monomethyl ether acetate；The alloy that round metal silk is made up of stannum, bismuth, antimony, four kinds of metals of copper, wherein stannum accounts for 90wt%, and bismuth accounts for
9.3wt%, antimony accounts for 0.5wt%, and copper accounts for 0.2wt%；A diameter of 0.6mm of the filled circles silk of the present embodiment, tinsel peripheral diameter is
1.0mm.
Embodiment 6
Method according to embodiment 1 prepares crystal-silicon solar cell s6.Difference is: the composition of glass dust is bi2o3Account for
90wt%, b2o3Account for 5wt%, sio2Account for 0.2wt%, al2o3Account for 0.1wt%, zno accounts for 4.7wt%；After tested, the d of this glass dust50
For 0.5 m, softening point is 250 DEG C, and real density is 5.92g/cm3；Unorganic glass slurry material contains: 82wt% unorganic glass powder,
8wt% organic binder bond ethyl cellulose, 12wt% organic solvent, organic solvent is dibutyl phthalate and tributyl phosphate
Mixed in equal amounts；The alloy that round metal silk is made up of stannum, bismuth, antimony, four kinds of metals of copper, wherein stannum accounts for 90wt%, and bismuth accounts for 2wt%, antimony
Account for 5wt%, copper accounts for 3.0wt%；The a diameter of 1.0mm of filled circles silk, tinsel peripheral diameter is 1.6mm.
Comparative example 1
This comparative example is used for explaining obtaining back electrode using silk screen printing back side silver paste and containing this back of the body electricity of prior art
The crystal-silicon solar cell of pole.
Using polysilicon chip specification be: 156 × 156mm.Thickness is 200 m (before corrosion), and before printing, thickness is 180
m.After by silicon wafer wool making, pn-junction processed, coated with antireflection film, first adopt silk screen printing back side silver paste (the pv505 silver of dupont company
Slurry), the silver-colored structure of the back of the body adopts four sections of systems of three lines (carry on the back silver and be three), and printing weight in wet base is 0.040g.Dry, in the remaining back of the body of back silver paste
Bright finish part, printing back field aluminum paste (the large standing grain in Taiwan science and technology 108c aluminium paste), after drying, then prints front side silver paste in phototropic face
(dupont company 17a silver paste), after continuous tunnel furnace sintering, obtains the electricity possessing aluminum back surface field, silver-colored back electrode line and front electrode line
Pond piece.
The battery sample that this comparative example obtains is designated as ds1.
Comparative example 2
Battery ds2 is prepared using the method in cn 102194898a.
Performance test
1st, surface appearance: using 10 times of amplification sem observation backplate surface appearances, if smooth, have or not plot point and hole
Hole.If phenomenons such as smooth surface, no plot point and holes, it is designated as ok, be otherwise designated as ng.The results are shown in Table 1.
2nd, weld strength: from Shanghai victory footpath between fields 2*0.2mm tin-lead welding, soak after bake with Henkel x32-10i type scaling powder
Dry, then at 330 DEG C, manual welding is carried out to the back electrode sintering.After cell piece natural cooling, using mountain degree sh-100
Puller system carries out tensile test along 45 ° of directions to the electrode being welded.The results are shown in Table 1.
3rd, electricity conversion: test is carried out to each cell piece using single flash operation simulation test instrument and obtains.Test strip
Part is standard test condition (stc): light intensity: 1000w/m2；Spectrum: am1.5；Temperature: 25 DEG C.The results are shown in Table 1.
Table 1
From table 1 it follows that being more than 6.20 with the weld strength of the cell piece of the tinsel preparation of the present invention, photoelectricity turns
Change efficiency and be more than 17.51%；And use the weld strength of solar battery sheet prepared by the method for comparative example 1 to be 5.53, opto-electronic conversion
Efficiency is 17.45%, and the weld strength with the solar battery sheet of the method preparation of comparative example 2 is 0.23, and photoelectric transformation efficiency is
17.16%.The back electrode of the crystal-silicon solar cell with the present invention is described, the photoelectricity of battery high with the weld strength of photovoltaic welding belt
Conversion efficiency is improved, and electrode fabrication does not use silver paste, greatly reduces the material cost of battery, increased crystalline silicon too
Positive cell power generation and the competitiveness of conventional electric power generation.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all essences in the present invention
Any modification, equivalent and improvement made within god and principle etc., should be included within the scope of the present invention.
Claims (19)
1. a kind of back electrode of solar cell tinsel it is characterised in that: this tinsel includes filled circles silk and be wrapped in circle
The unorganic glass powder solids of silk outer surface；Described filled circles silk is pure tin metal or tin alloy.
2. tinsel according to claim 1 it is characterised in that: circle silk and unorganic glass powder solids in described tinsel
Weight than for 5.0-20:1.
3. back electrode tinsel according to claim 1 it is characterised in that: described tin alloy is lead, bismuth, in antimony and copper
The alloy that at least one and stannum is collectively forming.
4. back electrode tinsel according to claim 1 it is characterised in that: described unorganic glass powder solids are by no
Machine glass dust slurry is dried and is formed；Described unorganic glass slurry material includes unorganic glass powder, organic binder bond and organic solvent.
5. back electrode tinsel according to claim 4 it is characterised in that: with the total amount of unorganic glass slurry material as base
Standard, the wherein content of unorganic glass powder are 80-90wt%, and the content of organic binder bond is 5.0-15wt%, and organic solvent is 5.0-
15wt%.
6. back electrode tinsel according to claim 4 it is characterised in that: described unorganic glass powder is by pbo and b2o3,
Or bi2o3And b2o3Composition.
7. back electrode tinsel according to claim 6 it is characterised in that: with the gross weight of unorganic glass powder as base
Standard, described b2o3Content be 15-35wt%.
8. back electrode tinsel according to claim 4 it is characterised in that: the particle diameter d of described unorganic glass powder50For
0.1-10µm.
9. back electrode tinsel according to claim 4 it is characterised in that: the softening temperature of described unorganic glass powder is
200-350℃.
10. back electrode tinsel according to claim 4 it is characterised in that: the real density of described unorganic glass powder
For 4.0-6.0g/cm3.
11. tinsels according to claim 1 it is characterised in that: a diameter of 0.5-2.0mm of described filled circles silk, gold
Belong to a diameter of 0.6-3.0mm of silk.
12. tinsels according to claim 4 it is characterised in that: described organic binder bond is ethyl cellulose, butyl is fine
At least one in dimension element, epoxy resin, alkyd resin and phenolic resin.
Back electrode of solar cell described in a kind of 13. claim 1 with preparation method wiry it is characterised in that: the party
Method is then filled circles silk will to be passed through unorganic glass slurry material pond by pure tin metal or tin alloy cold drawn one-tenth filled circles silk,
Make its periphery parcel last layer unorganic glass slurry material, then drying.
14. preparation methoies according to claim 13 it is characterised in that: the preparation method of described unorganic glass slurry material
For: organic binder bond is dissolved in organic solvent, heating for dissolving stirring at 50-80 DEG C, then add glass dust,
Stir and obtain final product.
15. preparation methoies according to claim 13 it is characterised in that: the drying temperature of described unorganic glass slurry material is
200-300 DEG C, drying time is 2-10 minute.
A kind of 16. back electrode of solar cell are it is characterised in that described back electrode is formed for tinsel fusion coating；Wherein, institute
State the tinsel that tinsel is described in claim 1-12 any one.
A kind of 17. preparation methoies of back electrode of solar cell, it is characterised in that the method is, aluminum back surface field are heated to 250-
300 DEG C, under inert atmosphere protection or vacuum state, tinsel is heated at 600-700 DEG C, makes metal and unorganic glass
Powder melts and mixes, and molten mixture is coated on aluminum back surface field surface, and cooling obtains back electrode, and described tinsel will for right
Seek the tinsel described in 1-12 any one.
A kind of 18. solar battery sheets, including silicon chip, be located at silicon chip back side the back of the body electric field, be located at the back of the body electric field on back electrode and
Positioned at front side of silicon wafer anelectrode it is characterised in that described back electrode be claim 16 described in back electrode of solar cell.
A kind of 19. solar modules, backboard that described solar module includes stacking gradually, sealant layer, battery
Piece, sealant layer and photic zone are it is characterised in that described cell piece is the solar battery sheet described in claim 18.
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| CN107845691B (en) * | 2016-09-19 | 2020-10-16 | 浙江凯盈新材料有限公司 | Metallic glass coated material for solar cell electrodes |
| CN106505110A (en) * | 2016-10-14 | 2017-03-15 | 南昌大学 | Sn Bi bases solder is used for making silicon/crystalline silicon heterojunction solar cel electrode |
| WO2018112742A1 (en) | 2016-12-20 | 2018-06-28 | Zhejiang Kaiying New Materials Co., Ltd. | Interdigitated back contact metal-insulator-semiconductor solar cell with printed oxide tunnel junctions |
| US10622502B1 (en) | 2019-05-23 | 2020-04-14 | Zhejiang Kaiying New Materials Co., Ltd. | Solar cell edge interconnects |
| US10749045B1 (en) | 2019-05-23 | 2020-08-18 | Zhejiang Kaiying New Materials Co., Ltd. | Solar cell side surface interconnects |
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