CN104008961A - Method for improving mechanical property of silicon wafers - Google Patents
Method for improving mechanical property of silicon wafers Download PDFInfo
- Publication number
- CN104008961A CN104008961A CN201410227149.3A CN201410227149A CN104008961A CN 104008961 A CN104008961 A CN 104008961A CN 201410227149 A CN201410227149 A CN 201410227149A CN 104008961 A CN104008961 A CN 104008961A
- Authority
- CN
- China
- Prior art keywords
- silicon wafer
- mechanical performance
- silicon
- silicon wafers
- semiconductor wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
Abstract
The invention relates to the technical field of semiconductor wafers, in particular to a method for improving the mechanical property of silicon wafers. The method comprises the following steps that silicon wafers obtained through an FZ or CZ method are selected and are cleaned thoroughly; the silicon wafers are arranged in airtight gas atmosphere which has certain pressure and contains nitrogen; ultrafast laser is utilized to irradiate the silicon wafers in the gas atmosphere. According to the silicon wafers obtained through the method, nitrogen elements are gathered on the periphery of dislocation of the silicon wafers to form clusters or compounds due to the over-saturation heavy doping effects of the nitrogen elements. The clusters and the compounds interact with each other forcefully and lock the dislocation, and the purpose of enhancing the mechanical property of the silicon wafers is achieved. Meanwhile, the oxygen content in the silicon wafers is reduced due to the over-saturation heavy doping effects of the nitrogen elements, and the yield of products is improved.
Description
Technical field
The invention belongs to semiconductor wafer technical field, be specifically related to a kind of method of improving semiconductor wafers mechanical performance.
Background technology
Along with the development and progress of modern science and technology, people pursue modern high technology more and more, and modern high technology is also changing the mankind's production and life gradually simultaneously.Wherein semi-conducting material is in the application of Modern high-tech industry, pace of progress is fast, growth momentum is strong, such as semi-conducting material at advanced defense technique, automatic technology, energy technology, space technology, information technology and the each side such as civilian a kind of functional material that is absolutely necessary, so the development level of semi-conductor industry is also to weigh an important evidence of an advanced degree of country.
In technical field of semiconductor, with being most widely used of silicon materials, for example, electronic devices and components more than 90% are all prepared by silicon materials.Just at present, due to silicon materials majority be with wafer or form that it is cut as producing device, therefore various silicon wafers such as monocrystalline silicon, polysilicon or amorphous silicon no matter are easily broken into a problem of generally depositing in fabricate devices process.Sometimes its mechanical performance can not meet the needs of device preparation process, causes a large amount of silicon wafers also for making device, just not lose efficacy, and causes the waste of a large amount of silicon wafers.In silicon wafer growth process, produce some defects such as room simultaneously, from gap silicon atom, interstitial oxygen concentration state, and dislocation etc., the device performance of silicon wafer production used is declined, the growth defect of therefore controlling in silicon chip also becomes particularly important.The interstitial oxygen concentration state of introducing in preparation process, makes other trace impurity in oxygen and silicon form metastable state defect sturcture and become deep energy level complex centre, and the device performance of producing with silicon materials is declined.
At present, in industry, there is theory and the experimental study about silicon wafer mechanical performance and oxygen content
(1-3), but great majority adopt under nitrogen environment, in the process of Czochralski method or zone-melting process growth silicon chip, nitrogen element are mixed to silicon chip, the concentration approximately 5.4 * 10 of this method institute nitrating atom
15cm
-3, the solid solubility 4.5 * 10 a little more than nitrogen in silicon
15cm
-3, the improvement in performance of silicon chip is had little effect.Therefore how by strengthening the mechanical performance of silicon materials and reducing its oxygen content, to increase the output capacity of using silicon wafer production device, become those skilled in the art's problem demanding prompt solution.
In addition, more introductions of predetermined substance being mixed to silicon materials about zone-melting process or Czochralski method please refer to the Chinese patent that publication number is respectively CN101399297B, CN101148777B, CN101694008A.
List of references:
【1】?Nitrogen?effect?on?oxygen?precipitation?in?Czochralski?silicon,?Appl.?Phys.?Lett.?48,?24?(1986)
【2】Effects?of?nitrogen?on?dislocation?behavior?and?mechanical?strength?in?silicon?crystals,?Appl.?Phys.?Lett.?56,?5016?(1983)
【3】Nitrogen?diffusion?and?interaction?with?dislocations?in?single-crystal?silicon?J.?Appl.?Phys.?105,?013519?(2009)。
Summary of the invention
The object of the present invention is to provide a kind of method of improving silicon wafer mechanical performance, in order to improve the mechanical performance of silicon materials, especially the raising of mechanical strength and fracture toughness aspect, and oxygen content in silicon wafer is reduced by the mode of oxygen precipitation, and the output capacity that makes these silicon materials produce device improves.
The method of improving silicon wafer mechanical performance provided by the present invention, can strengthen silicon wafer mechanical performance and reduce its oxygen content; Concrete steps are as follows:
Step 1: select the silicon wafer in intrinsic silicon wafer, N-type doped silicon wafer, P type doped silicon wafer or dielectric substrate, selected silicon wafer is cleaned, remove organic skin covering of the surface, foreign particle and the metal of wafer surface and stain;
Step 2: by the above-mentioned silicon wafer cleaning up, be placed in the atmosphere of airtight Nitrogen element gas, the pressure of this atmosphere is 60 ~ 80 KPa;
Step 3: in above-mentioned gas atmosphere, with silicon wafer described in ultrafast laser irradiation, obtain the silicon chip that doping contains over-saturation nitrogen element.
In the present invention, in step 1, described silicon wafer, not only comprise intrinsic silicon wafer, N-type doped silicon wafer and P type doped silicon wafer, can also be the silicon wafer in dielectric substrate, this step can guarantee, in each implementation step of silicon wafer, do not have other pollutant to mix silicon wafer inside.
In the present invention, in step 2, described Nitrogen element gas, is the gas that NF3, N2 common in various experiments or NF3 and N2 mix with arbitrary proportion, and this gas pressure intensity is 60 ~ 80 KPa
,preferred gas pressure intensity is 65 ~ 75 KPa.
In the present invention, in step 3, ultrafast laser refers to femtosecond laser, picosecond laser or nanosecond laser; Laser parameter is determined by selected laser;
Described femtosecond laser, its parameter is respectively pulsewidth 80 ~ 290 fs, optical maser wavelength 800 ~ 1064 nm, frequency 1 ~ 100 Hz, luminous flux 1 ~ 30 kJ/m
2, preferred pulsewidth 100 ~ 150 fs, wavelength 800 ~ 1030 nm, frequency 1 ~ 10 Hz, luminous flux 1 ~ 5 kJ/m
2;
Described picosecond laser, its parameter is respectively pulsewidth 20 ~ 50 ps, optical maser wavelength 800 ~ 1064 nm, frequency 1 ~ 100 Hz, luminous flux 1 ~ 30 kJ/m
2, preferred pulsewidth 30 ~ 40 ps, wavelength 1000 ~ 1064 nm, frequency 1 ~ 50 Hz, luminous flux 1 ~ 15 kJ/m
2;
Described nanosecond laser, its parameter is respectively pulsewidth 20 ~ 40 ns, optical maser wavelength 200 ~ 300 nm, frequency 1 ~ 100 Hz, luminous flux 10 ~ 40 kJ/m
2, preferred pulsewidth 25 ~ 35 ns, wavelength 240 ~ 260 nm, frequency 50 ~ 100 Hz, luminous flux 20 ~ 30 kJ/m
2.
In the present invention, by described step 3, focus on silicon chip inside and mix nitrogen element, doping content is up to 10
20cm
-3, and be positioned at gap digit and present electric inertia.Before silicon chip distortion, the heavily doped nitrogen element of this over-saturation can be gathered in around dislocation gradually, forms cluster or compound.Between these clusters or compound, there is strong interaction and lock dislocation.The existence of this dislocation locking effect, is increased the mechanical performance of silicon wafer, and not yielding while making silicon chip be subject to external force., mix after nitrogen, the nitrogen-atoms radius that is positioned at gap digit only has 0.70 meanwhile, and silicon atom radius reaches 1.17.Due to nitrogen-atoms radius, compare littlely by 40.1% with silicon, obviously make Lattice Contraction and attract oxygen atom to produce microdefect.Larger when mixing nitrogen concentration, large when over its solid solubility, the effect of this attraction oxygen atom is more obvious.Due to the existence of this microdefect, make the concentration threshold reduction of oxygen or cause the effect of accelerating oxygen precipitation.Therefore, this step is the core procedure that reaches the object of the invention.
Compared with prior art, the present invention has following beneficial effect:
1. the present invention adopts at silicon chip inside laser irradiation method, mix over-saturation heavy doping nitrogen element, nitrogen element is distributed in around dislocation, form cluster or compound, between these clusters or compound and dislocation, there is strong interaction, and reach the effect that locks dislocation, and improve the mechanical performance of silicon chip, the silicon chip rate of in use dying young is reduced.
2. the nitrogen element mixing in silicon chip inside belongs to over-saturation heavy doping, make nitrogen in silicon, attract the effect of oxygen atom generation microdefect more obvious, existence due to this microdefect, the concentration threshold of oxygen reduces or acceleration oxygen precipitation, thereby the oxygen content in silicon wafer is reduced, improve the device performance that silicon chip is produced.
3. the method, for improving the mechanical performance of silicon wafer and reducing its oxygen content, can not brought unpredictable injury to silicon wafer.
4. in addition, the method is for improving the mechanical performance of silicon materials and reducing its oxygen content, and free from environmental pollution, with low cost, operation is simple, and be easy to processing, operation and control, be the technical scheme that those skilled in the art easily operate left-hand seat.
Accompanying drawing explanation
Fig. 1 is nitrogen doped silicon, FZ silicon and the relation of CZ silicon upper yield point and duration that existing method obtains.
Wherein abscissa is the external force duration, and unit is h, and ordinate is upper yield point, and unit is MN/cm
3.1 is the graph of a relation of nitrogen doped silicon, and 2 is the graph of a relation of FZ silicon, and 3 is the graph of a relation of CZ silicon.
Fig. 2 nitrogen doped silicon surface, two SIMS figure that diverse location is measured.
Wherein abscissa is doping depth, and unit is nm, and ordinate is atomic concentration, and unit is atom/cm
3.
Fig. 3 nitrogen-doping method flow chart.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.
A lot of details have been set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization without prejudice to intension of the present invention in the situation that, so the present invention is not subject to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, and when the embodiment of the present invention is described in detail in detail, for ease of explanation, described schematic diagram is example, and it should not limit the scope of protection of the invention at this.
Just as described in the background section, in industry, silicon chip has the puzzlement that mechanical performance is low and oxygen content is higher at present, makes silicon chip output capacity can not get improving.Based on this awkward situation, the invention provides a kind of method, attempt to address this problem.
Below in conjunction with accompanying drawing, describe method provided by the present invention in detail.
Embodiment 1.
Prepare the silicon wafer that commercial FZ growing method obtains, this silicon wafer thickness is 350 ~ 500 um, is cut to the square of 2 cm * 2 cm, and this silicon chip is cleaned by RCA standard cleaning method; The silicon chip cleaning is placed in to the NF that pressure is 67 ~ 73 KPa immediately
3in atmosphere; Select nanosecond laser irradiation to be placed in NF
3silicon wafer in atmosphere, this nanosecond laser parameter is respectively that pulsewidth 25 ~ 30 ns, optical maser wavelength 240 ~ 250 nm, frequency are that 80 ~ 100 Hz, luminous flux are 25 ~ 30 kJ/m
2.The nitrating concentration obtaining by the method is about 10
20cm
-3.
Embodiment 2.
Prepare the silicon wafer that commercial CZ growing method obtains, this silicon wafer thickness is 250 ~ 350 um; Be cut into the square of 2 cm * 2 cm, this silicon chip is cleaned by RCA standard cleaning method; The silicon chip cleaning is placed in to the N that pressure is 67 ~ 73 KPa immediately
2in atmosphere; Select Gold Films Irradiated by Femtosecond Laser to be placed in N
2silicon wafer in atmosphere, this femtosecond laser parameter is respectively that pulsewidth 270 ~ 290 fs, optical maser wavelength 1000 ~ 1030 nm, frequency are that 1 ~ 5 Hz, luminous flux are 0.5 ~ 0.75 kJ/m
2.The nitrating concentration obtaining by the method is about 10
20cm
-3.
Embodiment 3.
Prepare the silicon wafer that commercial CZ growing method obtains, this silicon wafer thickness is 300 ~ 400 um; Be cut into the square of 2 cm * 2 cm, this silicon chip is cleaned by RCA standard cleaning method; The silicon chip cleaning is placed in to the NF that pressure is 67 ~ 73 KPa immediately
3and N
2in atmosphere; Select picosecond laser irradiation to be placed in NF
3silicon wafer in atmosphere, this picosecond laser parameter is respectively pulsewidth 30 ~ 350 ps, optical maser wavelength 1000 ~ 1030 nm, frequency is that frequency 1 ~ 50 Hz, luminous flux are 10 ~ 15 kJ/m
2.By the method, obtain nitrating concentration and be about 10
20cm
-3.
As Fig. 1, in FZ growth course, the nitrogen-doped silicon wafer obtaining by existing method, and by the silicon wafer of this wafer and common FZ used and the growth of CZ method, the relation of middle upper yield point and duration, this figure has also illustrated that three kinds of Different Silicon wafers are in the contrast of mechanical properties simultaneously.Wherein silicon chip nitrating concentration reaches 10
16cm
-3, the solid solubility 4.5 * 10 a little more than nitrogen in silicon wafer
15cm
-3.The silicon wafer of FZ growth, mechanical performance remains unchanged with the prolongation of external force application time, the silicon wafer mechanical performance of CZ growth reduces rapidly with the prolongation of external force duration, but the nitrogen that adulterates a little more than the silicon chip of solid solubility all the time than the silicon chip of CZ and FZ growth, mechanical performance is strong.And experimental repeatability can see, external force continues mechanical performance after 6 hours and reaches maximum.
As Fig. 2, be adulterate in the silicon wafer SIMS figure of nitrogen element of the inventive method.For the purpose of contrast, select to be positioned at two different positions on silicon chip, analyze nitrating concentration with the variation of the degree of depth.The SIMS Similar Broken Line of two positions, so the CONCENTRATION DISTRIBUTION in silicon has repeatability with the method gained nitrogen.As seen from the figure, the nitrogen element adulterating in silicon wafer, when reaching silicon chip 1 um place, concentration still remains on 10
17cm
-3.
As the inventive method gained, the inner heavily doped nitrogen element of over-saturation (as Fig. 2) of silicon chip, is positioned at gap digit and presents electric inertia.Before silicon chip deformation, the heavily doped nitrogen element of this over-saturation is gathered in around dislocation gradually, forms cluster or compound.Between these clusters or compound, there is strong interaction and by dislocation locking.Due to the locking-up effect of this dislocation, the mechanical performance of silicon wafer is increased, more easily resist external force (as shown in Figure 1)., mix after nitrogen element, the nitrogen-atoms radius that is positioned at gap digit only has 0.70 meanwhile, and silicon atom radius is 1.17.Due to nitrogen-atoms radius, compare littlely by 40.1% with silicon, obviously make Lattice Contraction and attract oxygen atom to produce microdefect.Larger when mixing nitrogen concentration, large when over its solid solubility, the effect of this attraction oxygen atom is more obvious.Due to the existence of this microdefect, make the concentration threshold reduction of oxygen or cause the effect of accelerating oxygen precipitation.
In this specification, each embodiment adopts the mode of going forward one by one to describe, and what each embodiment stressed is and the difference of other embodiment that, so description is fairly simple, relevant part partly illustrates referring to method.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can utilize method and the technology contents of above-mentioned announcement to make possible change and modification to technical solution of the present invention; therefore; every content that does not depart from technical solution of the present invention; any simple modification, equivalent variations and the modification above embodiment done according to technical spirit of the present invention, all belong to the protection range of technical solution of the present invention.
Claims (7)
1. improve a method for semiconductor wafers mechanical performance, it is characterized in that concrete steps are as follows:
Step 1: select the silicon wafer in intrinsic silicon wafer, N-type doped silicon wafer, P type doped silicon wafer or dielectric substrate, selected silicon wafer is cleaned, remove organic skin covering of the surface, foreign particle and the metal of wafer surface and stain;
Step 2: by the above-mentioned silicon wafer cleaning up, be placed in immediately the atmosphere of airtight Nitrogen element gas, the pressure of this atmosphere is 60 ~ 80 KPa;
Step 3: in above-mentioned gas atmosphere, with silicon wafer described in ultrafast laser irradiation, obtain the silicon chip that doping contains over-saturation nitrogen element.
2. the method for improving semiconductor wafers mechanical performance as claimed in claim 1, is characterized in that in step 2, and described Nitrogen element gas, is NF
3, N
2or NF
3and N
2the gas mixing with arbitrary proportion.
3. the method for improving semiconductor wafers mechanical performance as claimed in claim 1 or 2, is characterized in that in step 2, and described Nitrogen element gas pressure intensity is 65 ~ 75 MPa.
4. the method for improving semiconductor wafers mechanical performance as claimed in claim 1, is characterized in that in step 3, and described ultrafast laser refers to femtosecond laser, picosecond laser or nanosecond laser.
5. the method for improving semiconductor wafers mechanical performance as claimed in claim 4, is characterized in that described femtosecond laser, and its parameter is respectively pulsewidth 80 ~ 290 fs, optical maser wavelength 800 ~ 1064 nm, frequency 1 ~ 100 Hz, luminous flux 1 ~ 30 kJ/m
2.
6. the method for improving semiconductor wafers mechanical performance as claimed in claim 4, is characterized in that described picosecond laser, and its parameter is respectively pulsewidth 20 ~ 50 ps, optical maser wavelength 800 ~ 1064 nm, frequency 1 ~ 100 Hz, luminous flux 1 ~ 30 kJ/m
2.
7. the method for improving semiconductor wafers mechanical performance as claimed in claim 4, is characterized in that described nanosecond laser, and its parameter is respectively pulsewidth 20 ~ 40 ns, optical maser wavelength 200 ~ 300 nm, frequency 1 ~ 100 Hz, luminous flux 10 ~ 40 kJ/m
2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410227149.3A CN104008961A (en) | 2014-05-27 | 2014-05-27 | Method for improving mechanical property of silicon wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410227149.3A CN104008961A (en) | 2014-05-27 | 2014-05-27 | Method for improving mechanical property of silicon wafers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104008961A true CN104008961A (en) | 2014-08-27 |
Family
ID=51369577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410227149.3A Pending CN104008961A (en) | 2014-05-27 | 2014-05-27 | Method for improving mechanical property of silicon wafers |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104008961A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108548851A (en) * | 2018-06-25 | 2018-09-18 | 复旦大学 | Silicon substrate gas sensor and preparation method are adulterated in micro-structure over-saturation |
| CN110549016A (en) * | 2019-09-23 | 2019-12-10 | 北京工业大学 | Femtosecond laser cutting method for silicon carbide |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4990464A (en) * | 1988-12-30 | 1991-02-05 | North American Philips Corp. | Method of forming improved encapsulation layer |
| CN101597790A (en) * | 2009-06-24 | 2009-12-09 | 浙江大学 | The method of preparing cast polycrystalline silicon through melting silicon and doping nitrogen under nitrogen |
| CN101728312A (en) * | 2008-10-22 | 2010-06-09 | 株式会社半导体能源研究所 | SOI substrate and method for manufacturing the same |
| CN102976326A (en) * | 2012-12-17 | 2013-03-20 | 南开大学 | Method for preparing sulfur-doped silicon nano-particles |
-
2014
- 2014-05-27 CN CN201410227149.3A patent/CN104008961A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4990464A (en) * | 1988-12-30 | 1991-02-05 | North American Philips Corp. | Method of forming improved encapsulation layer |
| CN101728312A (en) * | 2008-10-22 | 2010-06-09 | 株式会社半导体能源研究所 | SOI substrate and method for manufacturing the same |
| CN101597790A (en) * | 2009-06-24 | 2009-12-09 | 浙江大学 | The method of preparing cast polycrystalline silicon through melting silicon and doping nitrogen under nitrogen |
| CN102976326A (en) * | 2012-12-17 | 2013-03-20 | 南开大学 | Method for preparing sulfur-doped silicon nano-particles |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108548851A (en) * | 2018-06-25 | 2018-09-18 | 复旦大学 | Silicon substrate gas sensor and preparation method are adulterated in micro-structure over-saturation |
| CN110549016A (en) * | 2019-09-23 | 2019-12-10 | 北京工业大学 | Femtosecond laser cutting method for silicon carbide |
| CN110549016B (en) * | 2019-09-23 | 2022-02-08 | 北京工业大学 | Femtosecond laser cutting method for silicon carbide |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103794473B (en) | The method of transition metal impurity in silicon wafer or silicon device is absorbed under a kind of room temperature | |
| CN103531685B (en) | Based on the processing method of PSS substrate epitaxial sheet | |
| KR101522488B1 (en) | Process for producing semiconductor device and semiconductor device | |
| EP2755231A1 (en) | Method for controlling concentration of donor in ga2o3-based single crystal | |
| US8440494B2 (en) | Single-crystalline silicon alkaline texturing with glycerol or ethylene glycol additives | |
| CN101620990A (en) | Method for reducing 4H-SiC intrinsic deep energy level defects | |
| CN101656196B (en) | Method for making a substrate structure comprising a film | |
| CN101494244A (en) | Back irradiation plane type PIN structure GaN-based ultraviolet detector and preparation method | |
| CN104008961A (en) | Method for improving mechanical property of silicon wafers | |
| CN103268852A (en) | Method for preparing supersaturated-doping semiconductor thin film | |
| CN1957458A (en) | Formation of a silicon germanium-on-insulator structure by oxidation of a buried porous silicon layer | |
| CN103956319A (en) | Method for improving electrical properties and optical properties of gallium nitride through laser irradiation on gallium nitride epitaxial wafer | |
| CN100590820C (en) | Acceptor activation method for nitrogen adulterated ZnO | |
| CN103194798B (en) | Ferromagnetic polycrystal film of a kind of transient metal doped zno-based and preparation method thereof | |
| Yang et al. | Low-energy ion implantation for shallow junction crystalline silicon solar cell | |
| CN103022093B (en) | Nanoscale silicon germanium material on insulator and preparation method thereof | |
| KR100632383B1 (en) | Semiconductor nano material doping method using neutron transmutation doping process | |
| Jaballah et al. | Large enhancement of the Hall mobility of the majority carrier in p-type Czochralski silicon after porous silicon damage: solutions for gettering efficiency improvement | |
| Karg et al. | Formation and annihilation of new donors in ribbon growth on substrate silicon | |
| Rebohle et al. | Semiconductor Applications | |
| DE102016114940B4 (en) | Thermal processing method for a wafer | |
| KR20110106119A (en) | Treatment agent for increasing texturing quality in solar cell wafer | |
| JP2021165215A (en) | Method for producing gallium oxide semiconductor | |
| Rohatgi et al. | Implementation of rapid thermal processing to achieve greater than 15% efficient screen-printed ribbon silicon solar cells | |
| Tan et al. | Optimised gettering and hydrogenation of multi-crystalline silicon wafers for use in solar cells |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140827 |