CN103996617A - Photoresist layer removing method after ion implantation technology - Google Patents

Photoresist layer removing method after ion implantation technology Download PDF

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Publication number
CN103996617A
CN103996617A CN201410254077.1A CN201410254077A CN103996617A CN 103996617 A CN103996617 A CN 103996617A CN 201410254077 A CN201410254077 A CN 201410254077A CN 103996617 A CN103996617 A CN 103996617A
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CN
China
Prior art keywords
photoresist layer
ion implantation
layer
implantation technology
cross
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410254077.1A
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Chinese (zh)
Inventor
宋振伟
徐友峰
陈晋
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Shanghai Huali Microelectronics Corp
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Shanghai Huali Microelectronics Corp
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Priority to CN201410254077.1A priority Critical patent/CN103996617A/en
Publication of CN103996617A publication Critical patent/CN103996617A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers

Abstract

The invention provides a photoresist layer removing method after an ion implantation technology. The method is used for removing a photoresist layer after the ion implantation technology. The photoresist layer comprises a crosslinking layer and a remaining photoresist layer below the crosslinking layer. The method comprises the step of ultraviolet light irradiation, wherein the crosslinking layer is irradiated and the property of the crosslinking layer is changed; the step of wet-method cleaning, wherein the crosslinking layer with the changed property and the remaining photoresist layer are cleaned to remove the photoresist layer from the surface of a semiconductor substrate. The method can remove the photoresist layer and will not destroy the semiconductor substrate or cause electric charge pollution and defects of the semiconductor substrate.

Description

The removal method of the photoresist layer after ion implantation technology
Technical field
The present invention relates to technical field of semiconductors, relate in particular to the removal method of the photoresist layer after a kind of ion implantation technology.
Background technology
Existing ion implantation technology is carried out taking photoresist layer as mask.After the especially heavy dose of ion implantation technology of ion implantation technology, the material of photoresist can change, and forms the very hard cross-linked layer of one deck on photoresist layer surface.After carrying out ion implantation technology, need to the cross-linked layer that be positioned at photoresist layer surface be removed by ashing (Ash) technique, and then utilize wet-etching technology that residual photoresist layer is removed completely.
In cineration technics process, Semiconductor substrate is caused to loss, and can in half conductive substrate, form electric charge pollution, can cause the leakage current of the semiconductor device of final formation to increase, such as cause the defects such as dark current in cmos image sensor.Along with semiconductor process techniques node continues reduction, super shallow junction technology is extensively quoted, and the defect that cineration technics causes the performance of device is more and more obvious.
Therefore, need a kind of removal method for the photoresist layer after ion implantation technology, photoresist layer can be removed, and can not damage Semiconductor substrate, can not cause the electric charge of Semiconductor substrate to pollute and defect.
Summary of the invention
The problem that the present invention solves provides a kind of removal method for the photoresist layer after ion implantation technology, photoresist layer can be removed, and can not damage Semiconductor substrate, can not cause the electric charge of Semiconductor substrate to pollute and defect.
For addressing the above problem, the invention provides the removal method of the photoresist layer after a kind of ion implantation technology, for the photoresist layer after ion implantation technology is removed, described photoresist layer comprises: cross-linked layer and the remaining photoresist layer that is positioned at cross-linked layer below, comprising:
Ultraviolet irradiation step, for described cross-linked layer is irradiated, changes the character of described cross-linked layer;
Wet clean step, cleans with the surface removal from Semiconductor substrate the cross-linked layer and the remaining photoresist layer that change after character.
Alternatively, the wave-length coverage of described UV-irradiation is 254-300 nanometer.
Alternatively, described luminous energy density scope is every square centimeter of 25-28 milliwatt.
Alternatively, described light dosage is greater than every square centimeter of 3 Jiao.
Alternatively, described wet clean step utilizes slot type wet-etching technology to carry out.
Alternatively, described wet clean step utilizes SPM solution to carry out.Described SPM solution comprises sulfuric acid and hydrogen peroxide, and the volume ratio of described sulfuric acid and hydrogen peroxide is 4:1-6:1.
In, the temperature chamber 125-130 degree Celsius of described wet clean step, the process time is 5-10 minute alternatively.
Alternatively, also comprise:
After described wet clean step, Semiconductor substrate is carried out to the step of SC1 cleaning, described SC1 cleaning step utilizes NH 4oH, H 2o 2, H 2the mixed solution of O carries out.
Alternatively, NH 4oH, H 2o 2, H 2the proportion of the solution of O is 1:1:5～1:2:7.
Compared with prior art, the present invention has the following advantages:
The present invention is irradiated described cross-linked layer by the step of UV-irradiation, change the character of described cross-linked layer, thereby cross-linked layer is easily removed by follow-up wet clean step, and in this wet-etching technology step, not only the cross-linked layer changing after character is removed, and remaining photoresist layer is also removed, owing to not utilizing cineration technics, therefore avoid the damage to substrate, also avoided causing the electric charge pollution of Semiconductor substrate and the problem of defect.
Brief description of the drawings
Fig. 1 is the structural representation of the Semiconductor substrate after ion implantation technology.
Embodiment
Please refer to shown in Fig. 1, Fig. 1 is the structural representation of the Semiconductor substrate after ion implantation technology.After ion implantation technology, one deck photoresist layer of the script in Semiconductor substrate 100 has become two-layer, respectively: cross-linked layer 102 and the remaining photoresist layer 101 that is positioned at cross-linked layer 102 belows.Cross-linked layer 102 be the surface of photoresist layer originally because surface nature variation has occurred ion implantation technology, formed the partially hard cross-linked layer 102 of material.This cross-linked layer is difficult to remove by conventional wet-etching technology.Must cross-linked layer 102 be burnt by cineration technics, then utilize conventional wet-etching technology to remove.
For the photoresist layer after Implantation being removed, prior art adopts full wet processing to remove photoresist.Described full wet processing utilizes sulfuric acid (H 2sO4) sulfuric acid) and hydrogen peroxide (H 2o 2) instant (the point of use) technology of mixing is ejected on the surface of brilliant Semiconductor substrate, mixed solution can reach 200 degrees Celsius in semiconductor substrate surface temperature.But this method can leave a large amount of grain defects (particle) in Semiconductor substrate, has limited the application of its full wet processing.
In order to address the above problem, the present invention proposes the method that adopts ultraviolet irradiation step to combine with wet clean step, utilize ultraviolet light shining cross-linked layer, change the character of cross-linked layer, make it easily utilize follow-up wet clean step to remove, and owing to not adopting cineration technics, therefore avoid the damage to Semiconductor substrate, can not cause the electric charge of Semiconductor substrate to pollute and defect.
Particularly, the invention provides the removal method of the photoresist layer after a kind of ion implantation technology, for the photoresist layer after ion implantation technology is removed, described photoresist layer comprises: cross-linked layer and the remaining photoresist layer that is positioned at cross-linked layer below, comprising:
Ultraviolet irradiation step, for described cross-linked layer is irradiated, changes the character of described cross-linked layer;
Wet clean step, cleans with the surface removal from Semiconductor substrate the cross-linked layer and the remaining photoresist layer that change after character.
Below in conjunction with specific embodiment, technical scheme of the present invention is described in detail.
Incorporated by reference to Fig. 1, in Semiconductor substrate 100, be formed with photoresist layer, the surface of described photoresist layer is because ion implantation technology has occurred crosslinked, particularly, described photoresist layer comprises: cross-linked layer 102 and the remaining photoresist layer 101 that is positioned at cross-linked layer 102 belows, and described cross-linked layer 102 is owing to having occurred to be difficult to the wet-etching technology removal by traditional, and therefore the present invention adopts ultraviolet irradiation step, for described cross-linked layer 102 is irradiated, change the character of described cross-linked layer 102.
Particularly, be 254-300 nanometer for the wave-length coverage of UV-irradiation.Described luminous energy density scope is every square centimeter of 25-28 milliwatt.The described light dosage that is used for the ultraviolet light of UV-irradiation is greater than every square centimeter of 3 Jiao.Cross-linked layer is irradiated with above-mentioned parameter, can obtain best effect, the character of cross-linked layer 102 is changed, easily remove by follow-up wet clean step.
After UV-irradiation, carry out wet clean step, the cross-linked layer 102 and the remaining photoresist layer 101 that change after character are cleaned with the surface removal from Semiconductor substrate 100.Particularly, described wet clean step utilizes slot type wet-etching technology to carry out.As one embodiment of the present of invention, described wet clean step utilizes SPM solution to carry out.Described SPM solution comprises sulfuric acid and hydrogen peroxide, and the volume ratio of described sulfuric acid and hydrogen peroxide is 4:1-6:1.Comparatively preferred, the temperature chamber 125-130 degree Celsius of described wet clean step, the process time is 5-10 minute.Utilize above-mentioned wet clean step, can fast cross-linked layer 102 and remaining photoresist layer 101 be removed, and can not damage Semiconductor substrate 100 and in Semiconductor substrate 100, cause that electric charge pollutes and the problem of defect.
As preferred embodiment, after described wet clean step, need to carry out to Semiconductor substrate the step of SC1 cleaning, so that the particle residue on Semiconductor substrate 100 surfaces is removed completely.As an embodiment, described SC1 cleaning step utilizes NH 4oH, H 2o 2, H 2the mixed solution of O carries out.Particularly, NH 4oH, H 2o 2, H 2the proportion of the solution of O is 1:1:5～1:2:7.
To sum up, the present invention is irradiated described cross-linked layer by the step of UV-irradiation, change the character of described cross-linked layer, thereby cross-linked layer is easily removed by follow-up wet clean step, and in this wet-etching technology step, not only the cross-linked layer changing after character is removed, and remaining photoresist layer is also removed, owing to not utilizing cineration technics, therefore avoid the damage to substrate, also avoid causing the electric charge pollution of Semiconductor substrate and the problem of defect.
Therefore, above-mentioned preferred embodiment is only explanation technical conceive of the present invention and feature, and its object is to allow person skilled in the art can understand content of the present invention and implement according to this, can not limit the scope of the invention with this.All equivalences that Spirit Essence is done according to the present invention change or modify, within all should being encompassed in protection scope of the present invention.

Claims (9)

1. a removal method for the photoresist layer after ion implantation technology, for the photoresist layer after ion implantation technology is removed, described photoresist layer comprises: cross-linked layer and the remaining photoresist layer that is positioned at cross-linked layer below, it is characterized in that, comprising:
Ultraviolet irradiation step, for described cross-linked layer is irradiated, changes the character of described cross-linked layer; Wet clean step, cleans with the surface removal from Semiconductor substrate the cross-linked layer and the remaining photoresist layer that change after character.
2. the removal method of the photoresist layer after ion implantation technology as claimed in claim 1, is characterized in that, the wave-length coverage of described UV-irradiation is 254-300 nanometer.
3. the removal method of the photoresist layer after ion implantation technology as claimed in claim 1, is characterized in that, described luminous energy density scope is every square centimeter of 25-28 milliwatt.
4. the removal method of the photoresist layer after ion implantation technology as claimed in claim 1, is characterized in that, described light dosage is greater than every square centimeter of 3 Jiao.
5. the removal method of the photoresist layer after ion implantation technology as claimed in claim 1, is characterized in that, described wet clean step utilizes slot type wet-etching technology to carry out.
6. the removal method of the photoresist layer after ion implantation technology as claimed in claim 1, is characterized in that, described wet clean step utilizes SPM solution to carry out.Described SPM solution comprises sulfuric acid and hydrogen peroxide, and the volume ratio of described sulfuric acid and hydrogen peroxide is 4:1-6:1.
7. the removal method of the photoresist layer after ion implantation technology as claimed in claim 1, is characterized in that, the temperature chamber 125-130 degree Celsius of described wet clean step, and the process time is 5-10 minute.
8. the removal method of the photoresist layer after Implantation as claimed in claim 1, is characterized in that, also comprises:
After described wet clean step, described Semiconductor substrate is carried out to the step of SC1 cleaning, described SC1 cleaning step utilizes NH 4oH, H 2o 2, H 2the mixed solution of O carries out.
9. the removal method of the photoresist layer after Implantation as claimed in claim 8, is characterized in that NH 4oH, H 2o 2, H 2the proportion of the solution of O is 1:1:5～1:2:7.
CN201410254077.1A 2014-06-09 2014-06-09 Photoresist layer removing method after ion implantation technology Pending CN103996617A (en)

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Application Number Priority Date Filing Date Title
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105824202A (en) * 2016-05-11 2016-08-03 上海华虹宏力半导体制造有限公司 Photoresist removal method and semiconductor device manufacturing method
JP2018534608A (en) * 2015-09-24 2018-11-22 ズース マイクロテク フォトマスク エクイップメント ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフトＳｕｓｓ ＭｉｃｒｏＴｅｃ Ｐｈｏｔｏｍａｓｋ Ｅｑｕｉｐｍｅｎｔ ＧｍｂＨ ＆ Ｃｏ． ＫＧ Method of treating a substrate with an aqueous liquid medium exposed to ultraviolet light

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1481519A (en) * 2000-12-22 2004-03-10 Process for removal of photoresis after post ion implantation
US20060264051A1 (en) * 2003-08-25 2006-11-23 Siemens Vdo Automotive Method for formng impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing device
CN101075552A (en) * 2006-05-18 2007-11-21 海力士半导体有限公司 Method of removing ion implanted photoresist
EP2166564A2 (en) * 2008-09-19 2010-03-24 Imec Method for removing a hardened photoresist from a semiconductor substrate

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1481519A (en) * 2000-12-22 2004-03-10 Process for removal of photoresis after post ion implantation
US20060264051A1 (en) * 2003-08-25 2006-11-23 Siemens Vdo Automotive Method for formng impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing device
CN101075552A (en) * 2006-05-18 2007-11-21 海力士半导体有限公司 Method of removing ion implanted photoresist
EP2166564A2 (en) * 2008-09-19 2010-03-24 Imec Method for removing a hardened photoresist from a semiconductor substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018534608A (en) * 2015-09-24 2018-11-22 ズース マイクロテク フォトマスク エクイップメント ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディートゲゼルシャフトＳｕｓｓ ＭｉｃｒｏＴｅｃ Ｐｈｏｔｏｍａｓｋ Ｅｑｕｉｐｍｅｎｔ ＧｍｂＨ ＆ Ｃｏ． ＫＧ Method of treating a substrate with an aqueous liquid medium exposed to ultraviolet light
CN105824202A (en) * 2016-05-11 2016-08-03 上海华虹宏力半导体制造有限公司 Photoresist removal method and semiconductor device manufacturing method
CN105824202B (en) * 2016-05-11 2019-10-25 上海华虹宏力半导体制造有限公司 Photoresist minimizing technology and manufacturing method of semiconductor device

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