CN103993280A - Preparation method of Nb2O5/Cu/Nb2O5 transparent electrode - Google Patents

Preparation method of Nb2O5/Cu/Nb2O5 transparent electrode Download PDF

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CN103993280A
CN103993280A CN201410238590.1A CN201410238590A CN103993280A CN 103993280 A CN103993280 A CN 103993280A CN 201410238590 A CN201410238590 A CN 201410238590A CN 103993280 A CN103993280 A CN 103993280A
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layer
preparation
thickness
transparency electrode
nb2o5
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CN201410238590.1A
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CN103993280B (en
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李玲霞
于仕辉
许丹
董和磊
金雨馨
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Tianjin University
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Tianjin University
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Abstract

The invention discloses a preparation method of an Nb2O5/Cu/Nb2O5 transparent electrode. The preparation method comprises the following steps: alternatively sputtering by adopting doping and magnetron sputtering deposition technologies, and limiting the layer thickness; performing sputtering deposition on an Nb2O5 layer with thickness of 20nm-120nm at first, then performing sputtering deposition on a Cu layer with thickness of 3nm-20nm, finally performing sputtering deposition on an Nb2O5 layer with thickness of 20nm-120nm. According to the preparation method, the Nb2O5/Cu/Nb2O5 transparent electrode consists of the two Nb2O5 layers and the Cu layer between the two Nb2O5 layers, the film resistance is reduced to the maximum extent, high penetration rate in a visible light region is kept, the cost is low, and the industrialized production is facilitated.

Description

A kind of Nb 2o 5/ Cu/Nb 2o 5the preparation method of structure transparency electrode
Technical field
The invention relates to film material with function, particularly a kind of Nb 2o 5/ Cu/Nb 2o 5the preparation method of structure transparency electrode.
Background technology
Transparent conductive oxide (TCO) film, owing to having high transmission of visible light and low resistivity, has vast potential for future development at aspects such as antistatic coating, touch display screen, solar cell, flat pannel display, calorifier, anti-icing equipment, optical coating and transparent optical electronics.A kind of transparent conductive film material that although ito thin film is current comprehensive photoelectric properties excellence, be most widely used, but indium is poisonous, expensive, poor stability, the problem such as in hydrogen plasma atmosphere, be easily reduced, people try hard to find a kind of ITO replacement material of cheap and excellent performance.
Nb 2o 5owing to having wider energy gap, so there is good transmitance in visible region, therefore we are with Nb 2o 5study as electrode materials.
Adopt magnetically controlled sputter method to prepare transparent conductive film, have that sedimentation rate is high, film tack is good, easy to control and can realize the advantages such as big area deposition, thereby become most study in current suitability for industrialized production, a ripe and the most most widely used method of technique.Ultra-thin conductive metal level also can be used as nesa coating, but at present applicablely only has gold and silver and platinum constant resistance rate is low and chemical stability is good precious metal, but gold and platinum cost costliness have limited its application.Therefore we select Cu to prepare Nb as conductive metal layer 2o 5/ Cu/Nb 2o 5structure transparency electrode.
Summary of the invention
Object of the present invention, is to overcome deficiency of the prior art, utilizes doping and magnetron sputtered deposition technology, and a kind of Nb of with low cost and excellent property is provided 2o 5/ Cu/Nb 2o 5the preparation method of structure transparency electrode.
The present invention is achieved by following technical solution.
A kind of Nb 2o 5/ Cu/Nb 2o 5the preparation method of structure transparency electrode, has following steps:
(1) by Nb 2o 5target and Cu target pack in magnetron sputtering cavity, separately clean dry glass substrate are put in magnetron sputtering sample table, and the distance of target and substrate is 40mm～90mm;
(2), after step (1) completes, the base vacuum degree of magnetic control sputtering system is evacuated to 1.0 × 10 -5below Torr, use Ar as sputter gas sputter Nb 2o 5layer, sputter total gas pressure is 5mTorr～20mTott, sputtering power is 50～200W, deposits and obtains the Nb that thickness is 20nm～120nm 2o 5layer;
(3) after step (2) completes, start sputter Cu layer, sputtering pressure is 3mTorr～20mTott, sputtering power 30～200W, deposition obtains the Cu layer that thickness is 3nm～20nm;
(4) after step (3) completes, sputter Nb again 2o 5layer, sputter total gas pressure is 5mTorr～20mTott, sputtering power is 50～200W, deposits and obtains the Nb that thickness is 20nm～120nm 2o 5layer, makes Nb 2o 5/ Cu/Nb 2o 5structure transparency electrode.
The Nb of described step (1) 2o 5nb in target 2o 5purity be that the purity of Cu in 99%, Cu target is 99.99%.
The substrate of described step (1) is glass substrate, quartz substrate or Sapphire Substrate, before using, with acetone, dehydrated alcohol and deionized water supersound washing, and dries up with high pure nitrogen.
The purity of the Ar of described step (2) is more than 99.99%.
Described step (2) or step (4) deposition obtain Nb 2o 5the thickness of layer is 30nm～60nm.
The thickness that described step (3) deposition obtains Cu layer is 9nm～11nm.
The thin film layer thickness of described step (2), (3) or (4) is controlled by adjusting process parameter or depositing time.
The present invention adopts magnetron sputtering method, and alternating sputtering limits bed thickness, prepares the Nb of " sandwich " structure 2o 5/ Cu/Nb 2o 5transparency electrode is (by two Nb 2o 5layer sandwich Cu layer composition), realize the at utmost reduction of sheet resistance, remain on the high permeability of visible region simultaneously.By the selection of suitable magnetron sputtering technique, can obtain the Nb of excellent performance 2o 5/ Cu/Nb 2o 5structure transparency electrode, the present invention is with low cost, is applicable to suitability for industrialized production.
Brief description of the drawings
Fig. 1 is that embodiment 1 prepares Nb in quartz substrate 2o 5/ Cu/Nb 2o 5optical transmittance (ultraviolet-visible spectrum) collection of illustrative plates of transparency electrode;
Embodiment
Nb of the present invention 2o 5target and Cu target are any commercially available or homemade target.
Below in conjunction with specific embodiment, the present invention is further elaborated, should be understood that these embodiment are only not used in and limit the scope of the invention for the present invention is described.
Embodiment 1
(1) Nb that is 99% by purity 2o 5target packs in vacuum cavity together with being 99.99%Cu target with purity; Then, successively use acetone, dehydrated alcohol and deionized water ultrasonic cleaning quartz substrate, and dry up with high pure nitrogen, put into vacuum cavity; The distance of target and substrate is 60mm.
(2) the base vacuum degree of magnetic control sputtering system is evacuated to 6.0 × 10 -6torr, the purity that passes into 60sccm is that more than 99.99% argon gas is as sputter gas sputter Nb 2o 5layer, the pressure of sputter total gas pressure is adjusted to 10mTorr, and sputtering power is 150W, deposits the Nb obtaining after 50nm 2o 5film.
(3) after step (3) completes, use sputtering pressure is 10Torr, and sputtering power is 100W, deposits the Cu thin film layer obtaining after 10nm.
(4) after step (4) completes, the pressure of sputter total gas pressure is adjusted to 10mTorr, sputtering power is 150W, then deposits the Nb obtaining after 50nm 2o 5film, makes Nb 2o 5/ Cu/Nb 2o 5structure transparency electrode.
The thickness of the thin film layer of described step (2), (3), (4) is controlled by adjusting process parameter or depositing time.
Fig. 1 is preparation Nb in quartz substrate in embodiment 1 2o 5/ Cu/Nb 2o 5optical transmittance (ultraviolet-visible spectrum) collection of illustrative plates of transparency electrode, visible average optical transmitance in visible-range reaches 80%.
After testing, the Nb of embodiment 1 2o 5/ Cu/Nb 2o 5the square resistance of transparency electrode is 15 Ω/.
Embodiment 2～7
Except the difference of film thickness, embodiment 2～7 other preparation process are identical with embodiment 1.
The Nb of gained after embodiment 2～7 detects 2o 5/ Cu/Nb 2o 5conductivity, average optical transmitance and the film thickness thereof of transparency electrode refer to table 1.
Table 1

Claims (7)

1. a Nb 2o 5/ Cu/Nb 2o 5the preparation method of structure transparency electrode, has following steps:
(1) by Nb 2o 5target and Cu target pack in magnetron sputtering cavity, separately clean dry glass substrate are put in magnetron sputtering sample table, and the distance of target and substrate is 40mm～90mm;
(2), after step (1) completes, the base vacuum degree of magnetic control sputtering system is evacuated to 1.0 × 10 -5below Torr, use Ar as sputter gas sputter Nb 2o 5layer, sputter total gas pressure is 5mTorr～20mTott, sputtering power is 50～200W, deposits and obtains the Nb that thickness is 20nm～120nm 2o 5layer;
(3) after step (2) completes, start sputter Cu layer, sputtering pressure is 3mTorr～20mTott, sputtering power 30～200W, deposition obtains the Cu layer that thickness is 3nm～20nm;
(4) after step (3) completes, sputter Nb again 2o 5layer, sputter total gas pressure is 5mTorr～20mTott, sputtering power is 50～200W, deposits and obtains the Nb that thickness is 20nm～120nm 2o 5layer, makes Nb 2o 5/ Cu/Nb 2o 5structure transparency electrode.
2. a kind of Nb according to claim 1 2o 5/ Cu/Nb 2o 5the preparation method of structure transparency electrode, is characterized in that, the Nb of described step (1) 2o 5nb in target 2o 5purity be that the purity of Cu in 99%, Cu target is 99.99%.
3. a kind of Nb according to claim 1 2o 5/ Cu/Nb 2o 5the preparation method of structure transparency electrode, is characterized in that, the substrate of described step (1) is glass substrate, quartz substrate or Sapphire Substrate, before using, with acetone, dehydrated alcohol and deionized water supersound washing, and dries up with high pure nitrogen.
4. a kind of Nb according to claim 1 2o 5/ Cu/Nb 2o 5the preparation method of structure transparency electrode, is characterized in that, the purity of the Ar of described step (2) is more than 99.99%.
5. a kind of Nb according to claim 1 2o 5/ Cu/Nb 2o 5the preparation method of structure transparency electrode, is characterized in that, described step (2) or step (4) deposition obtain Nb 2o 5the thickness of layer is 30nm～60nm.
6. a kind of Nb according to claim 1 2o 5/ Cu/Nb 2o 5the preparation method of structure transparency electrode, is characterized in that, the thickness that described step (3) deposition obtains Cu layer is 9nm～11nm.
7. a kind of Nb according to claim 1 2o 5/ Cu/Nb 2o 5the preparation method of structure transparency electrode, is characterized in that, the thin film layer thickness of described step (2), (3) or (4) is controlled by adjusting process parameter or depositing time.
CN201410238590.1A 2014-05-30 2014-05-30 A kind of Nb2O5/Cu/Nb2O5The preparation method of structured transparent electrode Expired - Fee Related CN103993280B (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH059724A (en) * 1991-07-09 1993-01-19 Shinkuron:Kk Formation of transparent conductive thin film
CN102102187A (en) * 2009-12-17 2011-06-22 中环股份有限公司 Method for preparing transparent conductive films with crystalline structures
CN103171187A (en) * 2011-12-22 2013-06-26 上海纳米技术及应用国家工程研究中心有限公司 Sandwich type transparent conductive film and preparation method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH059724A (en) * 1991-07-09 1993-01-19 Shinkuron:Kk Formation of transparent conductive thin film
CN102102187A (en) * 2009-12-17 2011-06-22 中环股份有限公司 Method for preparing transparent conductive films with crystalline structures
CN103171187A (en) * 2011-12-22 2013-06-26 上海纳米技术及应用国家工程研究中心有限公司 Sandwich type transparent conductive film and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
黄银松等: "用直流溅射工艺制备的氧化铌薄膜的性能", 《材料研究学报》 *

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