CN103992041A - Manufacturing method of nano metal grid transparent electro-conductive glass - Google Patents
Manufacturing method of nano metal grid transparent electro-conductive glass Download PDFInfo
- Publication number
- CN103992041A CN103992041A CN201410188865.5A CN201410188865A CN103992041A CN 103992041 A CN103992041 A CN 103992041A CN 201410188865 A CN201410188865 A CN 201410188865A CN 103992041 A CN103992041 A CN 103992041A
- Authority
- CN
- China
- Prior art keywords
- nano metal
- minutes
- coating
- opticglass
- nano
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
The invention relates to a manufacturing method of nano metal grid transparent electro-conductive glass, and is characterized in that the manufacturing method comprises the following manufacturing steps: (1) coating optical glass with a hydrophobic agent or an oleophobic agent; (2) etching the optical glass with a grid pattern by a laser machine; (3) coating the etched optical glass with a nano metallic printing ink by a way of spin coating, slit type coating, micro concave plate type coating or spray coating, and allowing the nano metallic printing ink to undergo self-leveling for 5-30 minutes on the optical glass; and (4) prebaking the coated optical glass in a baking oven for 5 minutes-20 minutes at the temperature of 80 DEG C, then again placing in the baking oven, and baking for 5 minutes-20 minutes at the temperature of 100 DEG C until the nano metallic printing ink is cured. The manufacturing method improves the scratch resistance of the electro-conductive glass, and achieves the nano metal electro-conductive glass having low resistance and high visible light transmittance.
Description
Technical field
The present invention relates to a kind of manufacture method of transparent conducting glass, particularly a kind of method of manufacturing nano metal grid transparent conducting glass.
Background technology
At present, the thin substrate of electrically conducting transparent mainly contains metal oxide substrate, carbon nanotube or Graphene substrate, nano metal substrate, conductive polymers substrate, wherein indium tin oxide (ITO) substrate widespread use the most.The main performance index of transparent conductive substrate has electroconductibility and visible transparency, and most of electrically-conductive backing plate needs balance performance between the two, and often the transmitance of high conductivity substrate is lower, and the substrate conducting of high permeability is lower.Metal oxide substrate, carbon nanotube or Graphene substrate, conductive polymers substrate often can not meet the two high request simultaneously, if ITO conductive glass is under the condition of sheet resistance 50 Ω/, its transmitance is lower than 85%, and nano metal grid transparent conductive substrate can have electricity and the optical property of low resistance high permeability concurrently, between nano metal mesh lines, overlap mutually, form conductive path, and gap visible ray sees through completely, forms high transparent conductive substrate.Conducting metal selects to have best electric conductivity, so the transparent conducting glass being coated with has very low sheet resistance, has high transmitance concurrently simultaneously, and as when sheet resistance is 10 Ω/, its visible light transmissivity is 88%.
Tin indium oxide (ITO) conductive glass is current the most conventional transparent conductive substrate, is widely used in touch screen, display lighting, sun power industry.The tradition design of ITO conductive glass needs the techniques such as photoetching development, etching, can produce pollution, and cost is high.
Printed electronics and sensitization elargol photoetching technique are applied in the manufacturing of nano metal grid nesa coating the earliest, and what adopt such as the Atmel of u s company is mode of printing, and Kodak of u s company and Japanese firm prefecture are that what to adopt is photoetching technique.
It is wide that yet sensitization elargol photoetching technique can realize the fine rule of metal grill, but for forming metal grill pattern, etch into a lot of metals, can waste a large amount of raw material metals, increased manufacturing cost, this technology also has metal grill and substrate attachment power problem not strong, that easily scratch.Printed electronics is directly printed on metal grill pattern on substrate, has avoided raw material metal waste, but printing technology also has metal grill and substrate attachment power problem not strong, that easily scratch.
Recently nanometer embossing also starts to be applied in the manufacture of nano metal grid nesa coating, by nano impression convex mold, pattern is stamped on flexible base plate, form pattern groove, again by nano metal Self-leveling to groove, form metal grill nesa coating, avoided metal grill and substrate attachment power problem not strong, that easily scratch.But the metallic mold for nano-imprint cost of this technology is very high, the different pattern impressing mould of product needed of different metal grid, and can only being applied in flexible base plate, just cannot on as opticglass at rigid substrates.
Summary of the invention
In order to produce the nano metal grid transparent conducting glass that possesses high conductivity and high light transmittance simultaneously, the invention provides a kind of manufacture method of nano metal grid transparent conducting glass, the step of employing is as follows:
A manufacture method for nano metal grid transparent conducting glass, is characterized in that: manufacturing step is as follows,
(1) hydrophober or oleophobic agent are coated on opticglass;
(2) with laser machine, lattice is etched on opticglass;
(3) by nano metal ink, the mode with spin coating, slit coating, the board-like coating of nick, spraying is coated on the opticglass that etching is good, treats nano metal ink Self-leveling 5～30 minutes on opticglass;
(4) by coated opticglass 80 degree prebake conditions after 5 minutes～20 minutes in baking oven, then put in baking oven 100 degree baking into 5 minutes～20 minutes, to nano metal ink solidification.
The substrate that the described opticglass of step (1) is rigidity a kind of.
The live width scope of the lattice that step (2) is described is 2～20 μ m, and the degree of depth of laser-induced thermal etching and the ratio of width are 1: 1, line length 5～100 μ m of lattice.
In nano metal ink described in step (3), nano metal comprises nanometer gold, copper, silver.
In nano metal ink described in step (3), the form of nano metal is spherical or linear, and the wire diameter of spheroidal particle is 100nm～1um, and nano metal line line length is 0.1～15 μ m, and wire diameter is 10～100nm.
Nano metal ink preparation method described in step (3) is as follows:
1) nano metal is mixed with to initial suspension, the initial suspension solvent of nano metal is water, ethanol, acetone, ethylene glycol, propylene glycol, glycerol, Virahol, nano metal content 0.2-10%, preferably 0.5%-5%;
2) prepare additive, additive comprises aqueous binder and tensio-active agent, and the composition of aqueous binder is Xylo-Mucine, carboxylic propyl methocel, carboxyethyl cellulose, polyvinyl alcohol, Vltra tears; The composition of tensio-active agent is sodium lauryl sulphate, polyoxyethylene glycol, alkyl glycoside, lauric acid amide of ethanol, Triton X-100.
3) additive is added in nano metal initial suspension, be made into coating nano metal ink, viscosity 20cP～100cP, wherein the content of nano metal is 0.1～5%, aqueous binder, content is 0.1～1%, tensio-active agent, content 0.01～0.1%.
The invention has the beneficial effects as follows: directly pattern laser is printed on opticglass, again nano metal is coated with to Self-leveling and forms conductive network to groove, final formation electrically drives functional zone, touch-control circuit pattern such as touch screen, the photoetching development of ITO conductive glass and the waste of material that etching causes have been avoided, improved scratch resistance, realized at rigid substrates and formed nano metal low resistance, visible ray high permeability conductive network.
Accompanying drawing explanation
Fig. 1 is making step figure of the present invention;
Fig. 2 is the laser-induced thermal etching grid in embodiments of the invention;
Specific embodiment
Manufacture method with reference to Figure of description 1 to Fig. 2 to a kind of nano metal grid transparent conducting glass of the present invention, is described in detail below.
The Fig. 2 of take carries out preferred embodiment explanation as example
The lattice that this preferred embodiment relates to as shown in Figure 2, live width scope 3 μ m, the degree of depth 3 μ m of laser-induced thermal etching, the line length 8 μ m of lattice.
Nano-silver thread ink, line length 2 μ m, particle diameter 15nm, viscosity 50cP, solvent is pure water, wherein the content of nano metal is 1%, aqueous binder polyvinyl alcohol, content is 0.2%, surfactant polyethylene octyl phenyl ether, content 0.01%.
Manufacturing step is as follows:
(1) hydrophober or oleophobic agent are coated on opticglass;
(2) with laser machine, lattice is etched on opticglass;
(3) by nano metal ink, the mode with spin coating, slit coating, the board-like coating of nick, spraying is coated on the opticglass that etching is good, treats nano metal ink Self-leveling 5～30 minutes on opticglass;
(4) by coated opticglass 80 degree prebake conditions after 5 minutes～20 minutes in baking oven, then put in baking oven 100 degree baking into 5 minutes～20 minutes, to nano metal ink solidification.
The substrate that the described opticglass of step (1) is rigidity.
The live width scope of the lattice that step (2) is described is 2～20 μ m, and the degree of depth of laser-induced thermal etching and the ratio of width are 1: 1, line length 5～100 μ m of lattice.
In nano metal ink described in step (3), nano metal comprises nanometer gold, copper, silver.
In nano metal ink described in step (3), the form of nano metal is spherical or linear, and the wire diameter of spheroidal particle is 100nm～1um, and nano metal line line length is 0.1～15 μ m, and wire diameter is 10～100nm.
Nano metal ink preparation method described in step (3) is as follows:
1) nano metal is mixed with to initial suspension, the initial suspension solvent of nano metal is water, ethanol, acetone, ethylene glycol, propylene glycol, glycerol, Virahol, nano metal content 0.2-10%, preferably 0.5%-5%;
2) prepare additive, additive comprises aqueous binder and tensio-active agent, and the composition of aqueous binder is Xylo-Mucine, carboxylic propyl methocel, carboxyethyl cellulose, polyvinyl alcohol, Vltra tears; The composition of tensio-active agent is sodium lauryl sulphate, polyoxyethylene glycol, alkyl glycoside, lauric acid amide of ethanol, Triton X-100.
3) additive is added in nano metal initial suspension, be made into coating nano metal ink, viscosity 20cP～100cP, wherein the content of nano metal is 0.1～5%, aqueous binder, content is 0.1～1%, tensio-active agent, content 0.01～0.1%.
The above, be only the specific embodiment of the present invention and preferred embodiment, and in the scope that those of ordinary skill in the art disclose in the present invention, the variation that can expect easily, within all should being encompassed in the protection domain of invention.
Claims (6)
1. a manufacture method for nano metal grid transparent conducting glass, is characterized in that: manufacturing step is as follows,
(1) hydrophober or oleophobic agent are coated on opticglass;
(2) with laser machine, lattice is etched on opticglass;
(3) by nano metal ink, the mode with spin coating, slit coating, the board-like coating of nick, spraying is coated on the opticglass that etching is good, treats nano metal ink Self-leveling 5～30 minutes on opticglass;
(4) by coated opticglass 80 degree prebake conditions after 5 minutes～20 minutes in baking oven, then put in baking oven 100 degree baking into 5 minutes～20 minutes, to nano metal ink solidification.
2. the manufacture method of a kind of nano metal grid transparent conducting glass according to claim 1, is characterized in that: what the described opticglass of described step (1) was rigid substrates is a kind of.
3. the manufacture method of a kind of nano metal grid transparent conducting glass according to claim 1, it is characterized in that: the live width scope of the lattice that described step (2) is described is 2～20 μ m, the degree of depth of laser-induced thermal etching and the ratio of width are 1: 1, line length 5～100 μ m of lattice.
4. the manufacture method of a kind of nano metal grid transparent conducting glass according to claim 1, is characterized in that: in the nano metal ink described in described step (3), nano metal comprises nanometer gold, copper, silver.
5. the manufacture method of a kind of nano metal grid transparent conducting glass according to claim 1, it is characterized in that: in the nano metal ink described in described step (3), the form of nano metal is spherical or linear, the wire diameter of spheroidal particle is 100nm～1um, nano metal line line length is 0.1～15 μ m, and wire diameter is 10～100nm.
6. the manufacture method of a kind of nano metal grid transparent conducting glass according to claim 1, is characterized in that: the described nano metal ink preparation method of described step (3) is as follows:
1) nano metal is mixed with to initial suspension, the initial suspension solvent of nano metal is water, ethanol, acetone, ethylene glycol, propylene glycol, glycerol, Virahol, nano metal content 0.2-10%, preferably 0.5%-5%;
2) prepare additive, additive comprises aqueous binder and tensio-active agent, and the composition of aqueous binder is Xylo-Mucine, carboxylic propyl methocel, carboxyethyl cellulose, polyvinyl alcohol, Vltra tears; The composition of tensio-active agent is sodium lauryl sulphate, polyoxyethylene glycol, alkyl glycoside, lauric acid amide of ethanol, Triton X-100;
3) additive is added in nano metal initial suspension, be made into coating nano metal ink, viscosity 20cP～100cP, wherein the content of nano metal is 0.1～5%, aqueous binder, content is 0.1～1%, tensio-active agent, content 0.01～0.1%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410188865.5A CN103992041A (en) | 2014-04-30 | 2014-04-30 | Manufacturing method of nano metal grid transparent electro-conductive glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410188865.5A CN103992041A (en) | 2014-04-30 | 2014-04-30 | Manufacturing method of nano metal grid transparent electro-conductive glass |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103992041A true CN103992041A (en) | 2014-08-20 |
Family
ID=51306419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410188865.5A Pending CN103992041A (en) | 2014-04-30 | 2014-04-30 | Manufacturing method of nano metal grid transparent electro-conductive glass |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103992041A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103996454A (en) * | 2014-04-30 | 2014-08-20 | 天津宝兴威科技有限公司 | Manufacturing method for nanometal grid transparent conductive substrate |
| CN108069618A (en) * | 2016-11-10 | 2018-05-25 | 蓝思科技（长沙）有限公司 | A kind of spraying method of 3D indents glass product and its equipment of use |
| CN108659614A (en) * | 2018-06-12 | 2018-10-16 | 南京邮电大学 | A kind of silk-screen printing nano silver wire electrically conductive ink and preparation method thereof |
| CN108897450A (en) * | 2018-06-30 | 2018-11-27 | 云谷（固安）科技有限公司 | Touch panel and preparation method thereof, display device |
| CN110545638A (en) * | 2018-05-28 | 2019-12-06 | 北京小米移动软件有限公司 | Terminal shell manufacturing method and terminal |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1668712A (en) * | 2002-06-13 | 2005-09-14 | 耐诺泡德斯工业有限公司 | A method for the production of conductive and transparent nano-coatings and nano-inks and nano-powder coatings and inks produced thereby |
| CN1825548A (en) * | 2004-12-08 | 2006-08-30 | 三星Sdi株式会社 | Method of forming a conductive pattern, a thin film transistor and method of manufacturing the same |
| CN101002515A (en) * | 2004-07-28 | 2007-07-18 | 埃托特克德国有限公司 | Method of manufacturing an electronic circuit assembly using direct write techniques |
| JP2007294355A (en) * | 2006-04-27 | 2007-11-08 | Asahi Glass Co Ltd | Manufacturing method of transparent conductive film, and transparent conductive film |
| CN102063951A (en) * | 2010-11-05 | 2011-05-18 | 苏州苏大维格光电科技股份有限公司 | Transparent conductive film and manufacturing method thereof |
| CN102875031A (en) * | 2012-09-12 | 2013-01-16 | 中国科学院上海光学精密机械研究所 | Method for electrolessly gilding surface of glass selectively |
| CN103325441A (en) * | 2012-03-21 | 2013-09-25 | 宸鸿科技(厦门)有限公司 | Conductive thin film of touch panel and manufacturing method thereof |
| CN103325442A (en) * | 2013-06-27 | 2013-09-25 | 北京印刷学院 | Composite transparent conductive thin film and preparing method thereof |
| CN103871546A (en) * | 2012-12-18 | 2014-06-18 | 鸿富锦精密工业（深圳）有限公司 | Transparent conductive substrate and manufacturing method thereof |
-
2014
- 2014-04-30 CN CN201410188865.5A patent/CN103992041A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1668712A (en) * | 2002-06-13 | 2005-09-14 | 耐诺泡德斯工业有限公司 | A method for the production of conductive and transparent nano-coatings and nano-inks and nano-powder coatings and inks produced thereby |
| CN101002515A (en) * | 2004-07-28 | 2007-07-18 | 埃托特克德国有限公司 | Method of manufacturing an electronic circuit assembly using direct write techniques |
| CN1825548A (en) * | 2004-12-08 | 2006-08-30 | 三星Sdi株式会社 | Method of forming a conductive pattern, a thin film transistor and method of manufacturing the same |
| JP2007294355A (en) * | 2006-04-27 | 2007-11-08 | Asahi Glass Co Ltd | Manufacturing method of transparent conductive film, and transparent conductive film |
| CN102063951A (en) * | 2010-11-05 | 2011-05-18 | 苏州苏大维格光电科技股份有限公司 | Transparent conductive film and manufacturing method thereof |
| CN103325441A (en) * | 2012-03-21 | 2013-09-25 | 宸鸿科技(厦门)有限公司 | Conductive thin film of touch panel and manufacturing method thereof |
| CN102875031A (en) * | 2012-09-12 | 2013-01-16 | 中国科学院上海光学精密机械研究所 | Method for electrolessly gilding surface of glass selectively |
| CN103871546A (en) * | 2012-12-18 | 2014-06-18 | 鸿富锦精密工业（深圳）有限公司 | Transparent conductive substrate and manufacturing method thereof |
| CN103325442A (en) * | 2013-06-27 | 2013-09-25 | 北京印刷学院 | Composite transparent conductive thin film and preparing method thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103996454A (en) * | 2014-04-30 | 2014-08-20 | 天津宝兴威科技有限公司 | Manufacturing method for nanometal grid transparent conductive substrate |
| CN103996454B (en) * | 2014-04-30 | 2017-01-18 | 天津宝兴威科技有限公司 | Manufacturing method for nanometal grid transparent conductive substrate |
| CN108069618A (en) * | 2016-11-10 | 2018-05-25 | 蓝思科技（长沙）有限公司 | A kind of spraying method of 3D indents glass product and its equipment of use |
| CN110545638A (en) * | 2018-05-28 | 2019-12-06 | 北京小米移动软件有限公司 | Terminal shell manufacturing method and terminal |
| CN108659614A (en) * | 2018-06-12 | 2018-10-16 | 南京邮电大学 | A kind of silk-screen printing nano silver wire electrically conductive ink and preparation method thereof |
| CN108897450A (en) * | 2018-06-30 | 2018-11-27 | 云谷（固安）科技有限公司 | Touch panel and preparation method thereof, display device |
| CN108897450B (en) * | 2018-06-30 | 2021-12-03 | 广州国显科技有限公司 | Touch panel, manufacturing method thereof and display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20220285044A1 (en) | Optically consistent transparent conductive film and preparation method thereof | |
| CN106782769B (en) | Flexible and transparent conductive laminated film of low roughness low square resistance and preparation method thereof | |
| CN103992041A (en) | Manufacturing method of nano metal grid transparent electro-conductive glass | |
| CN104835555B (en) | A kind of preparation method of pattern metal transparent conductive film | |
| CN106128564B (en) | The preparation method of PET/ nano-silver thread nesa coatings through illumination sintering processes | |
| CN103996454B (en) | Manufacturing method for nanometal grid transparent conductive substrate | |
| KR20120021451A (en) | Method for manufacturing transparent conductive layer and transparent conductive layer manufactured by the method | |
| TWI550463B (en) | Conductive film and method for manufacturing the same | |
| KR20150106152A (en) | Coating solution having silver nano wire, conductive thin film and manufacturing thereof | |
| KR20140014292A (en) | Method for forming conductive film, conductive film, insulation method, and insulation film | |
| CN105786242A (en) | Flexible touch panel sensing film and preparation method thereof | |
| CN103996453B (en) | A kind of manufacturing method of high transmittance nano metal transparent conductive film | |
| Chung et al. | High-performance flexible transparent nanomesh electrodes | |
| CN105487728B (en) | Touch panel and preparation method thereof | |
| CN104064282B (en) | A kind of manufacture method of high transmittance hard nanometer metallic transparent conducting film | |
| CN205334442U (en) | Flexible transparent conductive electrode structure of compound nanometer silver line | |
| CN103996456B (en) | A kind of manufacture method of high abrasion nano metal nesa coating | |
| CN109369945B (en) | Flexible conductive film and preparation method thereof | |
| CN104751940B (en) | transparent conductive film composition and transparent conductive film | |
| CN105224150B (en) | Touch panel | |
| CN103325441A (en) | Conductive thin film of touch panel and manufacturing method thereof | |
| CN104347154B (en) | A kind of nesa coating | |
| CN113488287A (en) | Method for reducing etching trace of nano silver wire conductive film | |
| CN203894725U (en) | Touch screen grid type electrode | |
| CN204926054U (en) | Double -deck metal nanoparticles net touch panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| DD01 | Delivery of document by public notice |
Addressee: Wei Yin Document name: Notification of Acceptance of Patent Application |
|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| DD01 | Delivery of document by public notice |
Addressee: Wei Yin Document name: Notification of Passing Examination on Formalities |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140820 |