CN103985771A - 双面电极太阳能电池及太阳能电池阵列 - Google Patents
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Abstract
本发明提供了一种双面电极太阳能电池及太阳能电池阵列,其中,双面电极太阳能电池包括P型硅基板,所述P型硅基板前后表面包覆有N型导体,并在P型硅基板和N型导体界面处扩散形成有PN结;所述P型硅基板上层的部分区域形成有电极通道,所述电极通道中形成有正电极,未形成有正电极的区域上形成有顶电极;所述P型硅基板下层形成有底电极,所述正电极通过外电路与所述底电极或所述顶电极连接。相比现有的双PN结太阳能电池增加了正电极,减少了电流的损耗,所述双面电极太阳能电池被一个环形PN结包围,对光线的吸收率增强了,同时在制造过程中减少了等离子刻边和去除背结两个步骤,使得工艺简单化。
Description
技术领域
本发明涉及太阳能电池领域,尤其涉及一种双面电极太阳能电池及太阳能电池阵列。
背景技术
随着经济的发展,人们的生活水平越来越高,对能源的需求越来越多,同时由于全球能源的持续短缺以及近年来环保意识逐渐抬头,因此目前如何提供环保、干净又不失效能的能源是人们最关心的议题。在各种替代性能源中,利用太阳光经由光电能量的转换而产生电能的太阳能电池,是目前所广泛应用且积极研发的技术。
随着相关产业持续投入研发太阳能电池,开发出了双面太阳能电池,通过双面受光的设计,使太阳能电池的两个表面皆可接收光线,并将太阳能转换为电能,进而可以更有效率的提升太阳能电池的能量。但是,传统的双面太阳能电池需要通过蚀刻、打孔等工艺方法形成正负电极,工艺复杂,正面电极和背面电极通过PN结相连接,电流损耗较大,并且无法在大面积的电池上制备。
本发明提供的一种双面电极太阳能电池工艺简单,并且在原有的基础上增加了一个正电极,在使用的过程中更加方便并且节省材料,电流的损耗也更小,在大面积制备和使用过程中都更加的方便。
发明内容
在下文中给出关于本发明的简要概述,以便提供关于本发明的某些方面的基本理解。应当理解,这个概述并不是关于本发明的穷举性概述。它并不是意图确定本发明的关键或重要部分,也不是意图限定本发明的范围。其目的仅仅是以简化的形式给出某些概念,以此作为稍后论述的更详细描述的前序。
本发明提供了一种双面电极太阳能电池,该电池相对于现有的双PN结太阳能电池制造工艺步骤减少,并且增加了一个正电极,可以减少电流的损耗的同时便于大面积制备。
本发明提供一种双面电极太阳能电池,包括:P型硅基板,所述P型硅基板前后表面包覆有N型导体,并在P型硅基板和N型导体界面处扩散形成有PN结;所述P型硅基板上层的部分区域形成有电极通道,所述电极通道中形成有正电极,未形成有正电极的区域上形成有顶电极;所述P型硅基板下层形成有底电极,所述正电极通过外电路与所述底电极或所述顶电极连接。
另外,本发明还提供一种太阳能电池阵列,包括多个阵列分布的所述的双面电极太阳能电池,至少一双面电极太阳能电池的正电极与相邻的另一双面电极太阳能电池,至少一双面电极太阳能电池的正电极与相邻的另一双面电极太阳能电池的底电极通过外电路连接。
本发明提供的双面电极太阳能电池,相比现有的双PN结太阳能电池增加了正电极,所述正电极与原有的两个电极通过外电路连接,电路连接更加方便,同时电流的损耗也相应减小;并且所述的太阳能电池无论从哪个角度看都被一个环形的PN结包围,对光线的吸收率增加了,并且减少了制造过程中等离子刻边和去除背结这两个步骤,工艺简单化了。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1至图5为本发明双面电极太阳能电池制备过程结构图
附图标记:
1-P型硅基板; 2-N型导体; 3-氧化层; 4-减反射膜;
5-正电极; 6-底电极; 7-顶电极;
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。在本发明的一个附图或一种实施方式中描述的元素和特征可以与一个或更多个其它附图或实施方式中示出的元素和特征相结合。应当注意,为了清楚的目的,附图和说明中省略了与本发明无关的、本领域普通技术人员已知的部件和处理的表示和描述。基于本发明中的实施例,本领域普通技术人员在没有付出创造性劳动的前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例一:
如图5所示为本发明提供的双面电极太阳能电池的结构示意图,包括:P型硅基板1,所述P型硅基板前后表面包覆有N型导体2,并在P型硅基板1和N型导体2界面处扩散形成有PN结;所述P型硅基板上层的部分区域形成有电极通道,所述电极通道中形成有正电极5,未形成有正电极的区域上形成有顶电极7;所述P型硅基板下层形成有底电极6,所述正电极通过外电路与所述底电极或所述顶电极连接。
如图1所示,首先提供P型硅基板。
相对于现有技术增加的正电极5与顶电极7都设置在所述N型导体2的第一表面,所以本方案提供的太阳能电池的第一表面有两个电极,既有正电极又有负电极,在使用过程中可以将上表面的两个电极与其他元件串联或者其他连接方法;所述底电极6和正电极5通过PN结相连接,顶电极7通过PN结与正电极5相连接,使用时通过上表面顶电极的连接减少了电流的损耗,相比通过两个PN结连接的电极来说,这样的连接方式太阳能转换成电能后的使用效率更高。
上述位于所述P型硅基板1和N型导体2之间的PN结是通过两次扩散得到的,所述PN结经对P型硅基板依次前、后两面扩散N型导体形成,先对所述P型导体正反面中的一面进行扩散,然后将P型导体翻转180度,对P型导体的另一面进行扩散,得到所述PN结,所述PN结其结深在200~500微米之间。
相比较现有工艺的一次性扩散,本发明提供的双面电极太阳能电池在扩散得到PN结的过程中采用了两次扩散,两次扩散都是基于同一氧化层实现的。首先将所述P型硅基板的第一表面对着风口,对硅基板的第一表面进行扩散,再将所述硅基板翻转180度,将所述P型硅基板的第二表面对着风口,对P型导体的第二表面进行扩散;上述两次扩散是为了使载流子扩散均匀,同时也可以看到未完成的电池被一个环形的PN结包围,上下两个面都有PN结,实现了对不同波长的光线的吸收,波长较短的光被上表面的PN结吸收,波长较长的光被下表面的PN结吸收。
上述步骤所述的扩散为将正反两面均有绒面结构的硅基板放置入扩散炉中进行扩散,扩散源采用液态POCl3,形成包覆所述硅基板的扩散层,扩散出的PN结其结深在200~500微米之间。
如图2所示,所述P型硅基板上层的部分区域形成有作为电极通道的P型氧化层3。
所述氧化层3形成于所述P型导体1上层,保留P型导体1上层部分氧化层,并刻蚀其他部位的氧化层,保留的氧化层3作为P型导体上层的正电极通道,在下面去除表面磷硅玻璃的步骤中也将保留的氧化层去除,生成一个通道,这个通道即用来印刷金属电极,如图3所示。
正电极5形成于所述P型导体上层保留有氧化层,并去除所述氧化层后留有通道的地方;如图5所示,顶电极7形成于所述P型导体上层形成所述正电极之外的其他部位。
所述保留的氧化层是为了保留通道形成所述正电极,本方案不需要通过将硅基板打孔再加上电极,只需要将需要的氧化层在蚀刻的时候留下就可以了。
可选的,所述正电极5和顶电极7金属为银,底电极7金属为铝;顶电极和正电极通过丝网印刷的方法将银金属印刷在所述硅基板的上表面,正电极印刷在氧化层去除的通道中,顶电极印刷在除通道处的其他位置,并且正电极和顶电极不能相连接或者相接触。通常印成栅线状,实现良好接触的同时使光线有较高的透过率;金属铝印刷满整个下表面,目的是为了克服由于电池串联而引起的电阻,并且减少下表面的复合。给硅基板表面印刷金属电极形成欧姆接触,使电流能够有效输出。
可选的,所述N型导体表面还包覆有减反射膜4;
可选的,所述减反射膜为Si3N4膜。
之前所述形成氧化层3和扩散的过程中会在导体表面生成磷硅玻璃,即掺有P2O5的SiO2层,需将其去除,然后再在表面钝化并镀减反射膜,为了减少载流子在导体表面的复合并且减少入射光的反射,增加对入射光的吸收,增加对光能了利用率;所述减反射膜采用化学气相淀积技术。
并且如图4所示,所述减反射膜包围整个N型导体,在通道中形成正电极,保证正电极只跟P型导体相连接,不会与N型导体连接造成短路。
可选的,所述N型导体下层整面印刷有铝电极。
常用的顶电极采用丝网印刷的方法,将银金属印刷在所述N型导体的上层,通常印成栅线状,实现良好接触的同时使光线有较高的透过率,更易被PN结吸收;所述底电极采用金属铝印刷满整个下层,目的是为了克服由于电池串联而引起的电阻并且有效减少下表面的复合。
可选的,所述P型硅基板上下表面形成有绒面;在所述P型硅基板表面制作绒面,所述绒面包覆整个硅基板,形成减反射结构,目的是减少入射光在硅表面的反射,增加硅基板对入射光的吸收。制作绒面利用了硅在稀NaOH溶液中的各向异性腐蚀这一特性。
可选的,所述氧化层材料的掺杂浓度高于所述P型硅基板的掺杂浓度。
本发明所述的双面电极太阳能电池制造工艺相对减少,在上表面增加的顶电极7,所以所述太阳能电池上表面有两个电极,既有正电极又有负电极,下表面有一个负电极,在使用的过程中可以直接连接所述上表面的正负两个电极,或者在大面积使用的时候可以将上表面的正负电极分别与其他电极相连。比较现有的双面PN结太阳能电池的电极需要通过一个或者多个PN结相连接,电流的损耗较大,本方案通过增加一个正电极,在电池的使用过程中电流的损耗减少;并且在多个太阳能电池相连接使用时,电极相连接的方式可以多种多样,并且上表面同时存在正负电极线连接方便也节省资源。
实施例二:
本发明还公布了一种太阳能电池阵列,包括多个阵列分布的双面电极太阳能电池,至少一双面电极太阳能电池的正电极与相邻的另一双面电极太阳能电池,至少一双面电极太阳能电池的正电极与相邻的另一双面电极太阳能电池的底电极通过外电路连接。
本方案所述的双面电极太阳能电池整体上看有三个电极,正电极,顶电极和底电极,在使用时,正电极可通过外电路与其他电极相连。在大面积制备太阳能电池板时,需要用到多个上述太阳能电池排列在太阳能电池板上,可能呈现N*M的排列方式。可选的,所述外电路为导线。
例如一个3*3排列上述太阳能电池的太阳能电池板。在制备所述太阳能电池板时,并不需要通过内电路将单个太阳能电池的电极完全连接起来,所述电池的第一表面增加的正电极可以用做连接,连接相邻的电池,无需通过内电路,并且连接方式可以多样化。
这样,在使用时可以选择最简便、节省材料的连接方法,并且在制备更大面积的太阳能电池板时同样处理即可,不会因为板面积的大小而不方便。
在本发明上述各实施例中,实施例的序号和/或先后顺序仅仅便于描述,不代表实施例的优劣。对各个实施例的描述都各有侧重,某个实施例中没有详述的部分,可以参见其他实施例的相关描述。
应该强调,术语“包括/包含”在本文使用时指特征、要素、步骤或组件的存在,但并不排除一个或更多个其它特征、要素、步骤或组件的存在或附加。
最后应说明的是:虽然以上已经详细说明了本发明及其优点,但是应当理解在不超出由所附的权利要求所限定的本发明的精神和范围的情况下可以进行各种改变、替代和变换。而且,本发明的范围不仅限于说明书所描述的过程、设备、手段、方法和步骤的具体实施例。本领域内的普通技术人员从本发明的公开内容将容易理解,根据本发明可以使用执行与在此所述的相应实施例基本相同的功能或者获得与其基本相同的结果的、现有和将来要被开发的过程、设备、手段、方法或者步骤。因此,所附的权利要求旨在在它们的范围内包括这样的过程、设备、手段、方法或者步骤。
Claims (10)
1.一种双面电极太阳能电池,其特征在于,包括:
P型硅基板,所述P型硅基板前后表面包覆有N型导体,并在P型硅基板和N型导体界面处扩散形成有PN结;
所述P型硅基板上层的部分区域形成有电极通道,所述电极通道中形成有正电极,未形成有正电极的区域上形成有顶电极;
所述P型硅基板下层形成有底电极,所述正电极通过外电路与所述底电极或所述顶电极连接。
2.根据权利要求1所述的双面电极太阳能电池,其特征在于,所述PN结经对P型硅基板依次前、后两面扩散N型导体形成,扩散形成的PN结的结深在200~500微米之间。
3.根据权利要求1所述的双面电极太阳能电池,其特征在于,所述N型导体表面还包覆有减反射膜。
4.所根据权利要求3所述的双面电极太阳能电池,其特征在于,所述减反射膜为Si3N4膜。
5.根据权利要求1所述的双面电极太阳能电池,其特征在于,所述正电极和顶电极为银电极,所述底电极为铝电极。
6.根据权利要求5所述的双面电极太阳能电池,其特征在于,所述N型导体下层整面印刷有铝电极。
7.根据权利要求1所述的双面电极太阳能电池,其特征在于,所述P型硅基板上下表面形成有绒面。
8.根据权利要求1所述的双面电极太阳能电池,其特征在于,所述氧化层材料的掺杂浓度高于所述P型硅基板的掺杂浓度。
9.一种太阳能电池阵列,其特征在于,包括多个阵列分布的如权利要求1-8任一所述的双面电极太阳能电池,至少一双面电极太阳能电池的正电极与相邻的另一双面电极太阳能电池,至少一双面电极太阳能电池的正电极与相邻的另一双面电极太阳能电池的底电极通过外电路连接。
10.根据权利要求9所述的太阳能电池阵列,其特征在于,所述外电路为导线。
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008300440A (ja) * | 2007-05-29 | 2008-12-11 | Sanyo Electric Co Ltd | 太陽電池セル及び太陽電池モジュール |
KR20110029827A (ko) * | 2009-09-16 | 2011-03-23 | 주식회사 효성 | 도금을 이용한 후면전극 태양전지의 제조방법 |
CN102171838A (zh) * | 2009-03-02 | 2011-08-31 | Lg电子株式会社 | 太阳能电池及其制造方法 |
CN102484146A (zh) * | 2009-09-10 | 2012-05-30 | Q-电池公司 | 太阳能电池 |
CN203232880U (zh) * | 2013-05-13 | 2013-10-09 | 南通大学 | 一种硅基埋栅三电极薄膜太阳能电池 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008300440A (ja) * | 2007-05-29 | 2008-12-11 | Sanyo Electric Co Ltd | 太陽電池セル及び太陽電池モジュール |
CN102171838A (zh) * | 2009-03-02 | 2011-08-31 | Lg电子株式会社 | 太阳能电池及其制造方法 |
CN102484146A (zh) * | 2009-09-10 | 2012-05-30 | Q-电池公司 | 太阳能电池 |
KR20110029827A (ko) * | 2009-09-16 | 2011-03-23 | 주식회사 효성 | 도금을 이용한 후면전극 태양전지의 제조방법 |
CN203232880U (zh) * | 2013-05-13 | 2013-10-09 | 南通大学 | 一种硅基埋栅三电极薄膜太阳能电池 |
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