CN103985661A - Semiconductor fabrication device - Google Patents
Semiconductor fabrication device Download PDFInfo
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- CN103985661A CN103985661A CN201310364645.9A CN201310364645A CN103985661A CN 103985661 A CN103985661 A CN 103985661A CN 201310364645 A CN201310364645 A CN 201310364645A CN 103985661 A CN103985661 A CN 103985661A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
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Abstract
Provided is a semiconductor fabrication device capable of detecting whether a crack is generated when a semiconductor chip is caught and installed. The embodiment of the invention relates to the semiconductor fabrication device comprising a push-up mechanism that pushes the semiconductor chip up, a catching mechanism that catches the semiconductor chip pushed up by the push-up mechanism, and a detector that detects an elastic wave when the semiconductor chip is pushed up by the push-up mechanism.
Description
Related application
The application enjoys using Japanese publication patent No. 2013-25685 (applying date: on February 13rd, 2013) as basic priority of applying for.The application is by the whole content that comprises basis application with reference to this basis application.
Technical field
Embodiments of the present invention relate to semiconductor-fabricating device.
Background technology
In recent years, the miniaturization of semiconductor packages, slimming advance.In addition, also has the semiconductor packages at the multiple semiconductor devices of semiconductor packages inner stacks.Therefore, the thickness of semiconductor chip becomes very thin.Its result, is fitted in semiconductor substrate after cutting blade cutting, easily produces crack when cutting blade picks up the semiconductor device of sheet semiconductor chip.Further, in the time of lead frame and/or circuit board (following, to be only the recited as substrate) semiconductor chip that above mounting is picked up from cutting blade, in semiconductor chip, also easily produce crack.
As the reason that produces crack in semiconductor chip in the time picking up, the viscosity that can consider cutting blade is discrete according to position, the different occasion of load that semiconductor chip loads in the time picking up and/or do not meet the occasion etc. of the condition (above pushing away speed and upper pushing volume etc.) of picking up.Further, as the reason that produces crack in semiconductor chip when mounted, can consider pressing the occasion that load is too large and/or have foreign matter on substrate in the time of mounting, the occasion that load converges etc.
Produce the semiconductor chip in crack, the processing that need to discard etc. as bad product, still, in order to judge having or not of crack, need to carry out the inspection based on amplifying observation and/or the electrical characteristics inspection based on detection.But practical problem is impossible carry out amplifying observation inspection about semiconductor chip totally.Further, same, in the electrical characteristics based on surveying check, be also difficult to carry out for the semiconductor chip of thin thickness.Therefore,, during by final test after semiconductor die packageization, do not know the defect of the semiconductor chip based on crack, according to the difference of occasion, until manufactured a large amount of bad products during the discovery of defect.
In order to solve above-mentioned problem, for example propose with attracting the occasion peeled off from sorption chips such as cutting blades of chuck, monitoring attracts the flow of the sorption system of chuck, supervision chip peel off completely from adhesion zone before the case of bending of chip.
Summary of the invention
As more than, in the time picking up and/or while installation, in semiconductor chip, easily produce crack, require a kind ofly can detect the semiconductor device having or not that this crack occurs.
The semiconductor-fabricating device having or not that provides a kind of crack that can detect the semiconductor chip in the time picking up and while installation to occur is provided the object of embodiments of the present invention.
The semiconductor-fabricating device that embodiments of the present invention relate to comprises: upper pushing mechanism, will push away on the semiconductor chip of individual sheet; Mechanism for picking, picks up the semiconductor chip above being pushed away by upper pushing mechanism; Detector, detects the elastic wave while semiconductor chip above being pushed away via upper pushing mechanism.
Brief description of the drawings
Fig. 1 is the calcspar of the semiconductor-fabricating device that relates to of execution mode.
Fig. 2 is the operating instruction figure of the upper pushing mechanism of the pick device that relates to of execution mode.
Fig. 3 is the operating instruction figure of the upper pushing mechanism of the pick device that relates to of execution mode.
Fig. 4 is the operating instruction figure of the installing mechanism of the erecting device that relates to of execution mode.
Fig. 5 is the operating instruction figure of the installing mechanism of the erecting device that relates to of execution mode.
Fig. 6 is an example of the table data of the semiconductor-fabricating device note that relates to of execution mode.
Fig. 7 is the flow chart of the operation of the pick device that relates to of execution mode.
Fig. 8 is the flow chart of the operation of the pick device that relates to of execution mode.
The explanation of symbol
2 ... cutting blade, 3 ... wafer ring, 100 ... pick device, 110 ... maintaining body, 120 ... upper pushing mechanism, 130 ... X-Y platform, 140 ... holding components, 150 ... chuck, 160 ... driving mechanism, 170 ... cylinder, 180 ... detector, 200 ... erecting device, 210 ... rest, 220 ... chuck, 230 ... cylinder, 240 ... driving mechanism, 250 ... electro-dissociator, 260 ... detector, 300 ... control device, 300a ... memory, 400 ... pre-determined bit platform.
Embodiment
Below, with reference to accompanying drawing, explain about execution mode.
(execution mode)
Fig. 1 is the calcspar of the semiconductor-fabricating device that relates to of execution mode.The semiconductor-fabricating device that this execution mode relates to possesses: pick device 100, picks up the semiconductor chip C of sheet from cutting blade 2; Erecting device 200, at lead frame and/or the upper mounting semiconductor chip of circuit board (following, to be only recited as substrate T) C; Control device 300, controls pick device 100 and erecting device 200; With pre-determined bit platform 400 (handing-over platform).
(pick device 100)
Pick device 100 possesses: maintaining body 110, upper pushing mechanism 120, X-Y platform 130, holding components 140, chuck 150, driving mechanism 160, cylinder 170 and detector 180.Moreover the operation of pick device 100, is controlled by control device 300.Further, upper pushing mechanism 120 and chuck 150, be connected to not shown vacuum pump.
Maintaining body 110 keeps wafer ring 3.Wafer ring 3 keep will be by cutting the peripheral part of the bonding cutting blade 2 of the semiconductor chip C of individual sheet.Cutting blade 2 possesses the sheet basic material of the resin with retractility of such as PVC (Corvic) and/or PET (polyethylene terephthalate) etc. and the bond layer arranging in the one side side (semiconductor chip C side) of this sheet basic material.Bond layer, preferably, uses the material of the character reducing according to adhesion strengths such as the irradiations of ultraviolet ray (UV).
Upper pushing mechanism 120 pushes away semiconductor chip C from rear side (downside).X-Y platform 130 drives upper pushing mechanism 120 in the horizontal direction with respect to the semiconductor chip C on cutting blade 2, carries out the positioning action of horizontal direction.Holding components 140 is supported upper pushing mechanism 120.
Chuck 150 sorptions are also picked up the semiconductor chip C above pushing away by upper pushing mechanism 120.Driving mechanism 160 makes chuck 150 drive in the horizontal direction with respect to the semiconductor chip C on cutting blade 2, carries out the positioning action of horizontal direction.Cylinder 170 drives chuck 150 in the vertical direction with respect to the semiconductor chip C on cutting blade 2.
Detector 180 is for example piezo-electric device (AE (Acoustic Emission: acoustic emission) transducers), and the elastic energy of emitting when detecting in the distortion of semiconductor chip C and/or destroying is also transformed to the signal of telecommunication.Elastic energy is emitted with the form of sound wave (mainly having the high frequency component of tens of kHz～number MHz) conventionally.This sound wave occurs until destroy the generation in previous distortion and/or crack along with material.By detecting this sound wave, can detect the distortion of semiconductor chip C and/or the generation in crack.
In Fig. 1, detector 180 is arranged on the holding components 140 of supporting upper pushing mechanism 120.But, if can detect the place of the elastic energy of emitting with the form of sound wave because the crack of semiconductor chip C occurs, also can be arranged on other place.Because the sound wave that the crack of semiconductor chip C occurs to produce also can be passed on via elastomer (rubber etc.).Therefore, can be arranged on the most place of pick device 100.
Moreover, in order to remove the sound wave (noise) beyond the sound wave producing due to the crack of semiconductor chip C, preferably, at detector 180, the filter of the frequency band of the sound wave occurring while making silicon (Si) through generation crack is set.This filter can be hard formation, can be also software.And, also can in the time of the push-up operation of semiconductor chip C, only detect elastic energy.By only detecting elastic energy when the push-up operation of semiconductor chip C, can further remove noise.
Pick device 100 picks up the semiconductor chip C on cutting blade 2, is positioned on pre-determined bit platform 400 (handing-over platform).
(pick-up operation)
Fig. 2～Fig. 3 is the operating instruction figure of upper pushing mechanism 120.Below, with reference to Fig. 2, Fig. 3, illustrate simply about formation and the pick-up operation of upper pushing mechanism 120.Moreover the pick-up operation of pick device 100, is controlled by control device 300.
Upper pushing mechanism 120 possesses: on multistage, push away unit 121 (following, to be recited as and to push away unit 121) and rest 122.Upper pushing mechanism 120 is configured to, and is connected to not shown vacuum pump, by the back side of the upper surface 120a sorption cutting blade 2 of upper pushing mechanism 120.
Rest 122 is accommodated and is pushed away unit 121, makes to push away unit 121 liftings.Above push away the lifting of unit 121, undertaken by rotatablely moving of not shown motor and motor is transformed to straight-line linear guides.On push away unit 121 owing to driving by motor, so can change the rising or falling speed and the upper pushing volume that push away unit 121.
Secondly, illustrate about operation.Originally, control driving mechanism 160, chuck 150 is positioned as the positive top of semiconductor chip C of picking up object.Further, control X-Y platform 130, upper pushing mechanism 120 is positioned as the positive bottom of semiconductor chip C of picking up object.
After this, make pushing mechanism 120 increase, upper surface 120a is connected to the back side of cutting blade 2, by the back side of the cutting blade 2 that vacuumizes to attract.Further, chuck 150 is declined, the upper surface (with reference to Fig. 2 (a)) of sorption semiconductor chip C.
Make to push away unit 121 and chuck 150 simultaneously with identical speed rising, make semiconductor chip C rise to the height of hope.Now, in rest 122, above push away unit 121, gradually rise to inner circumferential side from outer circumferential side.Its result, via cutting blade 2, can will push to the height (with reference to Fig. 2 (b), Fig. 3 (a)) of hope as the semiconductor chip C that picks up object.Moreover " simultaneously ", " the identical speed " of here saying does not mean that strict " simultaneously ", " identical speed ", be " simultaneously ", " identical speed " haply.
On semiconductor chip C, postpone, keep the state certain hour as shown in Fig. 3 (a).Need this retention time, to peel off the cutting blade 2 of fitting overleaf for semiconductor chip C from the back side of semiconductor chip C.Moreover this retention time can change by the motor of controlling upper pushing mechanism 120.
After certain hour, control cylinder 170, make the chuck 150 former states risings (with reference to Fig. 3 (b)) of sorption semiconductor chip C.After this semiconductor chip C that, mounting is picked up by driving mechanism 160 on pre-determined bit platform 400 as shown in Figure 1.
(erecting device 200)
Erecting device 200 possesses: rest 210, chuck 220, cylinder 230, driving mechanism 240, electro-dissociator 250 and detector 260.Moreover the operation of erecting device 200, is controlled by control device 300.Further, chuck 220 is connected to not shown vacuum pump.
Rest 210 is kept for loading the substrate T of semiconductor chip C.
Chuck 220 sorptions are also picked up the semiconductor chip C of mounting on pre-determined bit platform 400.Driving mechanism 240 makes chuck 220 drive in the horizontal direction with respect to rest 210, carries out the positioning action of horizontal direction.Cylinder 230 drives chuck 220 in the vertical direction.Electro-dissociator 250 (static eraser) is airborne oxygen molecule and/or nitrogen molecular ionization, by this ionized oxygen molecule and/or nitrogen molecular and the electric charge of semiconductor chip C, prevents charged.
Detector 260, identical with the detector 180 of pick device 100, be piezo-electric device (AE (Acoustic Emission: acoustic emission) transducer), the elastic energy of emitting when detecting in the distortion of semiconductor chip C and/or destroying is also transformed to the signal of telecommunication.
In Fig. 1, detector 260 is arranged on cylinder 230.But, if can detect the place of the elastic energy of emitting with the form of sound wave because the crack of semiconductor chip C occurs, also can be arranged on other place.Because the sound wave that the crack of semiconductor chip C occurs to produce also can be passed on via such as elastomer (rubber etc.).Therefore, can be arranged on the most place of erecting device 200.
Moreover, in order to remove the sound wave (noise) beyond the sound wave producing due to the crack of semiconductor chip C, preferably, at detector 260, the filter of the frequency band of the sound wave occurring while making silicon (Si) through generation crack is set.This filter can be hard formation, can be also software.And, also can in the time of the fitting operation of semiconductor chip C, only detect elastic energy.By only detecting elastic energy when the fitting operation of semiconductor chip C, can further remove noise.
(fitting operation)
Fig. 4, Fig. 5 are the sectional views of the installing mechanism of erecting device.Below, with reference to Fig. 4 and Fig. 5, illustrate about fitting operation.Moreover the fitting operation of erecting device 200, is controlled by control device 300.
Originally, control driving mechanism 240, chuck 220 is positioned to the positive top of the semiconductor chip C on pre-determined bit platform 400.Afterwards, chuck 220 is declined, the upper surface of sorption semiconductor chip C, picking up semiconductor chip C (with reference to Fig. 4 (a)).
Secondly, control driving mechanism 240, chuck 220 is moved to load just the going up of substrate T of semiconductor chip C.Afterwards, decline chuck 220 loads semiconductor chip C on substrate T, to the semiconductor chip C W (with reference to Fig. 4 (b)) that loads.
After certain hour, the vacuum of chuck 220 (vaccum) is turn-offed to (off), control cylinder 230 and make chuck 220 rise (with reference to Fig. 5).After this, chuck 220 moves to pre-determined bit platform 400, so that semiconductor chip C to be then installed.
Control device 300 is controlled the operation of pick device 100 and erecting device 200.Further, at the memory 300a of control device 300, the large minor change pick device 100 of elastic energy that storage detects according to the detector 260 of the detector 180 by pick device 100 and erecting device 200 and the table data of the operation of erecting device 200.
Fig. 6 is the figure that is illustrated in an example of the table data of memory 300a storage.Fig. 6 (a) is the table data of pick device 100 use, and Fig. 6 (b) is the table data of erecting device 200 use.
As shown in Fig. 6 (a), control device 300, according to the size of the elastic energy e being detected by detector 180 (in fact, with the magnitude of voltage that is in proportion and converts of elastic energy e), change the speed that above pushes away S, upper pushing volume R, the retention time T of pick device 100.
But the each value in Fig. 6 (a) meets following relation (1)～(4).
0≤e1<e2<e3…(1)
S3<S2<S1…(2)
R3<R2<R1…(3)
T1<T2<T3…(4)
In a word, control device 300, becomes large according to the elastic energy e that detected by detector 180, makes to push away speed S and upper pushing volume R reduces, and retention time T is extended, if more than elastic energy e becomes threshold value e3, make the operation of pick device 100 stop.
If the elastic energy e detecting is large, high in the possibility in semiconductor chip C generation crack.Therefore, become large according to elastic energy e as described above, make to push away speed S, upper pushing volume R reduces, and the retention time T of pick device 100 is extended, and reduces thus the worry that produces defect due to crack at semiconductor chip C.Moreover the concrete control of the control device 300 of the table data about use as shown in Fig. 6 (a), illustrates with reference to Fig. 7.
Also have, as shown in Fig. 6 (b), control device 300, according to the size of the elastic energy e being detected by detector 260 (in fact, the magnitude of voltage that is in proportion and converts with elastic energy), the flow F that presses load W, electro-dissociator of variation erecting device 200.
But the each value in Fig. 6 (b) meets following relation (5)～(7).
0≤e4<e5<e6…(5)
W3<W2<W1…(6)
F1<F2<F3…(7)
In a word, control device 300, becomes large according to the elastic energy e that detected by detector 260, makes to press load W and reduces, and the flow F of electro-dissociator is increased, if more than elastic energy e becomes threshold value e6, make the operation of erecting device 200 stop.
If the elastic energy e detecting is large, high in the possibility in semiconductor chip C generation crack.Therefore, become large according to elastic energy e as described above, reduce by the load W that presses that reduces erecting device 200 worry that produces defect due to crack at semiconductor chip C.Further, by increasing the flow F of electro-dissociator, remove the back side of semiconductor chip C and/or the dust of mounting surface (particle), reduce the worry that produces crack at semiconductor chip C.Moreover the concrete control of the control device 300 of the table data about use as shown in Fig. 6 (b), illustrates with reference to Fig. 8.
Moreover, in this execution mode, control pick device 100 and erecting device 200 by a control device 300, still, at pick device 100 and erecting device 200, also can possess independently respectively control device.
Pre-determined bit platform 400 (handing-over platform) is the handing-over platform of pick device 100 and erecting device 200.The semiconductor chip C being picked up by pick device 100 is positioned on pre-determined bit platform 400, installs to substrate T is upper by erecting device 200.Moreover, in pre-determined bit platform 400, carry out the aligning (position is involutory) of semiconductor chip C.Owing to possessing pre-determined bit platform 400, the pick-up operation of semiconductor chip C and fitting operation can independently carry out.Therefore, can shorten and pick up and install the elapsed time needing.
(operation of pick device 100)
Fig. 7 is the flow chart that represents the operation of pick device 100.Below, with reference to Fig. 1 and Fig. 7, the operation of pick device 100 is described.Moreover pick device 100 is controlled its operation by control device 300.
Originally, the ID (step S101) of the semiconductor chip C of object is picked up in control device 300 identification conducts.Secondly, control device 300 is controlled pick device 100, picks up as the semiconductor chip C (step S102) that picks up object.
The detector 180 of pick device 100 detects elastic wave in the time of the picking up of semiconductor chip C, and (elastic energy is (step S103) e), and exports to control device 300.Control device 300, with reference to the table data in memory 300a storage, judges whether the size of the elastic energy e being detected by detector 180 does not meet threshold value e1 (step S104).
Do not meet the occasion (step S104 is yes) of threshold value e1 in the size of the elastic energy e being detected by detector 180, control device 300 determines whether and has picked up whole semiconductor chip C (step S105).Pick up the occasion of whole semiconductor chip C (step S105 is yes), control device 300 finishes the pick-up operation of the semiconductor chip C being undertaken by pick device 100.
Do not pick up the occasion of whole semiconductor chip C (step S105 is no), having the occasion of the semiconductor chip C not picking up, control device 300 turns back to the operation of step S101, then identifies the ID of semiconductor chip.
The size of the elastic energy e being detected by detector 180 meets the occasion (step S104 is no) of threshold value e1 (more than e1), the ID (position (which being respectively in vertical, horizontal individual) on ID and the semiconductor substrate of semiconductor substrate) (step S106) of the semiconductor chip C picking up in memory 300a storing step S102.
Secondly, control device 300 judges whether the size of the elastic energy e being detected by detector 180 does not meet threshold value e2 (step S107).The occasion (step S107 is yes) that does not meet threshold value e2 in the size of the elastic energy e being detected by detector 180, control device 300 makes the variation of operating parameters (step S108) of pick device 100.
Particularly, control device 300 changes respectively the speed that above the pushes away S of pick device 100, upper pushing volume R, retention time T to S2, R2, T2.After alter operation parameter, control device 300 is from step S105 implementation and operation.
The occasion (step S107 is no) that meets threshold value e2 (more than e2) in the size of the elastic energy e being detected by detector 180, control device 300 judges whether the size of the elastic energy e being detected by detector 180 does not meet threshold value e3 (step S109).The occasion (step S109 is yes) that does not meet threshold value e3 in the size of the elastic energy e being detected by detector 180, control device 300 makes the variation of operating parameters (step S108) of pick device 100.
Particularly, control device 300 makes to push away speed S, upper pushing volume R, retention time T respectively to S3, R3, T3 variation on pick device 100.After alter operation parameter, control device 300 is from step S105 implementation and operation.
The occasion (step S109 is no) that meets threshold value e3 (more than e3) in the size of the elastic energy e being detected by detector 180, control device 300 stops the operation (step S110) of pick device 100.
(operation of erecting device 200)
Fig. 8 is the flow chart that represents the operation of erecting device 200.Below, with reference to Fig. 1 and Fig. 8, the operation of erecting device 200 is described.Moreover erecting device 200 is controlled its operation by control device 300.
Originally, control device 300 is identified the ID (step S201) as the semiconductor chip C of mounting object.Secondly, control device 300 is controlled erecting device 200, picks up the semiconductor chip C as mounting object from pre-determined bit platform 400, afterwards, is arranged on substrate T (step S202).
The detector 260 of erecting device 200 detects elastic wave in the time of the installation of semiconductor chip C, and (elastic energy is (step S203) e), and exports to control device 300.Control device 300, with reference to the table data in memory 300a storage, judges whether the size of the elastic energy e being detected by detector 260 does not meet threshold value e4 (step S204).
Do not meet the occasion (step S204 is yes) of threshold value e4 in the size of the elastic energy e being detected by detector 260, control device 300 determines whether has installed whole semiconductor chip C (step S205).In the occasion (step S205 is yes) that whole semiconductor chip C is installed, control device 300 finishes the fitting operation of the semiconductor chip C being undertaken by erecting device 200.
The occasion of whole semiconductor chip C (step S205 is no) be not installed, is having the semiconductor chip C not installing, control device 300 turns back to the operation of step S201, then identifies the ID of semiconductor chip.
Meet the occasion (step S204 is no) of threshold value e4 (more than e4) in the size of the elastic energy e being detected by detector 260, the ID of the semiconductor chip C installing (which substrate which) (step S206) in memory 300a storing step S202.
Secondly, control device 300 judges whether the size of the elastic energy e being detected by detector 260 does not meet threshold value e5 (step S207).The occasion (step S207 is yes) that does not meet threshold value e5 in the size of the elastic energy e being detected by detector 260, control device 300 makes the variation of operating parameters (step S208) of erecting device 200.
Particularly, control device 300 changes respectively the flow F that presses load W and electro-dissociator of erecting device 200 to W2, F2.After alter operation parameter, control device 300 is from step S205 implementation and operation.
The occasion (step S207 is no) that meets threshold value e5 (more than e5) in the size of the elastic energy e being detected by detector 260, control device 300 judges whether the size of the elastic energy e being detected by detector 260 does not meet threshold value 6e (step S209).The occasion (step S209 is yes) that does not meet threshold value e6 in the size of the elastic energy e being detected by detector 260, control device 300 makes the variation of operating parameters (step S208) of erecting device 200.
Particularly, control device 300 changes respectively the flow F that presses load W and electro-dissociator of erecting device 200 to W3, F3.After alter operation parameter, control device 300 is from step S205 implementation and operation.
The occasion (step S209 is no) that meets threshold value e6 (more than e6) in the size of the elastic energy e being detected by detector 260, control device 300 stops the operation (step S209) of erecting device 200.
As more than, in pick device 100 and erecting device 200 that execution mode relates to, possess the detector 180 and the detector 260 that detect the elastic energy that produces in the time of picking up semiconductor chip C.Therefore, can detect in real time the generation in the crack of semiconductor chip C.Its result, can remove the semiconductor chip C that crack occurs at once as bad chip, can prevent until by semiconductor chip C encapsulationization afterwards owing to not knowing that the defect of the semiconductor chip C based on crack manufactures a large amount of bad products.
Further, in pick device 100, become large according to the elastic energy e detecting, on reducing, push away speed S, upper pushing volume R, extend retention time T.And, be occasion more than predetermined threshold value e3 in the size of elastic energy e detecting, the operation of pick device 100 is stopped.Therefore,, while picking up semiconductor chip C then, can suppress crack in semiconductor chip C and occur.
Further, in erecting device 200, become large according to the elastic energy e detecting, reduce to press load W, increase electro-dissociator flow F.And, be occasion more than predetermined threshold value e6 in the size of elastic energy e detecting, the operation of erecting device 200 is stopped.Therefore,, when semiconductor chip C is then installed, can suppresses crack in semiconductor chip C and occur.
(variation of execution mode)
Further, at pick device 100 and erecting device 200, can be set to detect that the semiconductor chip C of the above elastic energy of threshold value (e1, e2) gives the concentrator marker of mark.By for the semiconductor chip C that the elastic wave of following crack generation detected gives mark, even if estimate, also can carry out the confirmation of bad chip, convenience is improved.Further, in above-mentioned execution mode, to 200, set respectively 3 threshold values (e1～e3, e4～e4) at pick device 100 and erecting device, but also can increase the number of the threshold value of setting, and then control extremely subtly parameter.
(other execution mode)
As more than, although explanation several embodiments of the present invention, these embodiment are just as illustrating, instead of limit scope of invention.These embodiment can be various forms implement, not departing from the scope of main idea of invention, can carry out various omissions, displacement, change.These embodiment and distortion thereof are also that scope of invention, main idea comprise, and are also simultaneously that invention and the impartial scope thereof described in the scope of claim comprises.
Claims (6)
1. a semiconductor-fabricating device, is characterized in that, comprising:
Upper pushing mechanism, will push away on the semiconductor chip of individual sheet;
Mechanism for picking, picks up the above-mentioned semiconductor chip above being pushed away by above-mentioned upper pushing mechanism;
The 1st detector, detects the elastic wave while semiconductor chip above being pushed away via above-mentioned upper pushing mechanism;
Installing mechanism, the semiconductor chip that mounting is picked up by above-mentioned mechanism for picking on substrate;
The 2nd detector, detects the elastic wave while making mounting semiconductor chip via above-mentioned installing mechanism;
Electro-dissociator, prevents charged to above-mentioned semiconductor chip;
Wherein, above-mentioned upper pushing mechanism, in the speed that above pushes away of the above-mentioned semiconductor chip of large minor change of the elastic wave detecting according to above-mentioned the 1st detector, the upper pushing volume of above-mentioned semiconductor chip and maintenance, push at least one party of the retention time of the state of stating semiconductor chip, if the elastic wave being detected by above-mentioned the 1st detector exceedes the 1st threshold value, shut-down operation;
Above-mentioned installing mechanism, press pressure when the large minor change of elastic wave detecting according to above-mentioned the 2nd detector is installed above-mentioned semiconductor chip on aforesaid substrate and from least one party of the air quantity of above-mentioned electro-dissociator, if the elastic wave being detected by above-mentioned the 2nd detector exceedes the 2nd threshold value, shut-down operation.
2. a semiconductor-fabricating device, is characterized in that, comprising:
Upper pushing mechanism, will push away on the semiconductor chip of individual sheet;
Mechanism for picking, picks up the above-mentioned semiconductor chip above being pushed away by above-mentioned upper pushing mechanism;
Detector, detects the elastic wave while semiconductor chip above being pushed away via above-mentioned upper pushing mechanism.
3. semiconductor-fabricating device as claimed in claim 2, is characterized in that,
Above-mentioned upper pushing mechanism, according at least one party who pushes to the retention time of the state of stating semiconductor chip in the upper pushing volume of the speed that above pushes away of the above-mentioned semiconductor chip of large minor change of the elastic wave of above-mentioned detector detection, above-mentioned semiconductor chip and maintenance.
4. a semiconductor-fabricating device, is characterized in that, comprising:
Installing mechanism, the semiconductor chip of a mounting sheet on substrate;
Detector, detects the elastic wave while making mounting semiconductor chip via above-mentioned installing mechanism.
5. semiconductor-fabricating device as claimed in claim 4, is characterized in that, comprising:
Electro-dissociator, prevents charged to above-mentioned semiconductor chip;
Above-mentioned installing mechanism, at least one party of press pressure when the large minor change of the elastic wave detecting according to above-mentioned detector is installed above-mentioned semiconductor chip on aforesaid substrate and the air quantity of above-mentioned electro-dissociator.
6. the semiconductor-fabricating device as described in claim 2 or 4, is characterized in that,
If the elastic wave being detected by above-mentioned detector exceedes threshold value, shut-down operation.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013025685A JP5931772B2 (en) | 2013-02-13 | 2013-02-13 | Semiconductor manufacturing equipment |
| JP025685/2013 | 2013-02-13 |
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| Publication Number | Publication Date |
|---|---|
| CN103985661A true CN103985661A (en) | 2014-08-13 |
| CN103985661B CN103985661B (en) | 2017-09-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310364645.9A Active CN103985661B (en) | 2013-02-13 | 2013-08-20 | Semiconductor- fabricating device |
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| JP (1) | JP5931772B2 (en) |
| CN (1) | CN103985661B (en) |
| TW (1) | TWI538082B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111952235A (en) * | 2019-05-17 | 2020-11-17 | 三菱电机株式会社 | Semiconductor manufacturing apparatus and method for manufacturing semiconductor device |
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| JP6634149B2 (en) * | 2016-03-28 | 2020-01-22 | 株式会社Ｆｕｊｉ | Component supply device, mounting device, and component supply method |
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| JP6814674B2 (en) * | 2017-03-24 | 2021-01-20 | 株式会社ディスコ | Seat expansion device |
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Also Published As
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| TW201432833A (en) | 2014-08-16 |
| TWI538082B (en) | 2016-06-11 |
| CN103985661B (en) | 2017-09-08 |
| JP2014154826A (en) | 2014-08-25 |
| JP5931772B2 (en) | 2016-06-08 |
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