CN103985652A - 一种晶片应力测量装置及测量方法 - Google Patents
一种晶片应力测量装置及测量方法 Download PDFInfo
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- CN103985652A CN103985652A CN201310049375.2A CN201310049375A CN103985652A CN 103985652 A CN103985652 A CN 103985652A CN 201310049375 A CN201310049375 A CN 201310049375A CN 103985652 A CN103985652 A CN 103985652A
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- 238000005259 measurement Methods 0.000 title claims abstract description 45
- 238000000691 measurement method Methods 0.000 title abstract 3
- 238000001514 detection method Methods 0.000 claims abstract description 17
- 235000012431 wafers Nutrition 0.000 claims description 134
- 239000000523 sample Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 33
- 230000007246 mechanism Effects 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000205 computational method Methods 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 6
- 238000005070 sampling Methods 0.000 claims description 4
- 239000004576 sand Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000013074 reference sample Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
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Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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CN201310271765.4A CN103985653B (zh) | 2013-02-07 | 2013-02-07 | 一种晶片应力测量方法 |
CN201310049375.2A CN103985652B (zh) | 2013-02-07 | 2013-02-07 | 一种晶片应力测量装置及测量方法 |
Applications Claiming Priority (1)
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CN201310049375.2A CN103985652B (zh) | 2013-02-07 | 2013-02-07 | 一种晶片应力测量装置及测量方法 |
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CN201310271765.4A Division CN103985653B (zh) | 2013-02-07 | 2013-02-07 | 一种晶片应力测量方法 |
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Publication Number | Publication Date |
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CN103985652A true CN103985652A (zh) | 2014-08-13 |
CN103985652B CN103985652B (zh) | 2016-09-21 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103985653A (zh) * | 2013-02-07 | 2014-08-13 | 北京智朗芯光科技有限公司 | 一种晶片应力测量方法 |
WO2015169007A1 (zh) * | 2014-05-06 | 2015-11-12 | 北京智朗芯光科技有限公司 | 自动实时快速检测晶片基底二维形貌的装置 |
CN105698706A (zh) * | 2014-11-26 | 2016-06-22 | 北京智朗芯光科技有限公司 | 自动检测晶片基底二维形貌的装置 |
CN105789083A (zh) * | 2016-05-27 | 2016-07-20 | 中南大学 | 一种光波导晶圆表面检测装置 |
CN106910694A (zh) * | 2017-03-07 | 2017-06-30 | 中国电子科技集团公司第三十八研究所 | 一种自动检测集成电路器件翘曲度的方法及装置 |
CN108801610A (zh) * | 2018-07-09 | 2018-11-13 | 北京石晶光电科技股份有限公司济源分公司 | 一种激光检测晶片应力装置 |
CN111063634A (zh) * | 2019-11-12 | 2020-04-24 | 度亘激光技术(苏州)有限公司 | 监测装置和方法 |
CN111208063A (zh) * | 2020-03-03 | 2020-05-29 | 度亘激光技术(苏州)有限公司 | 反射光谱监测装置和方法 |
CN112577647A (zh) * | 2020-11-26 | 2021-03-30 | 苏州长光华芯光电技术股份有限公司 | 一种半导体激光器芯片的应力测试***及测试方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1618004A (zh) * | 2001-11-26 | 2005-05-18 | 特维特程序控制技术有限公司 | 用于测量半导体晶片中的应力的方法和装置 |
KR20070009210A (ko) * | 2005-07-15 | 2007-01-18 | 호서대학교 산학협력단 | 고속처리 고온공정에서 웨이퍼의 스트레스 측정장치 |
CN102023068A (zh) * | 2010-10-10 | 2011-04-20 | 徐建康 | 薄膜应力测量设备及其测量方法 |
CN102620868A (zh) * | 2012-03-10 | 2012-08-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | 具有垂直光路结构的薄膜应力测量装置及其应用 |
CN103985653A (zh) * | 2013-02-07 | 2014-08-13 | 北京智朗芯光科技有限公司 | 一种晶片应力测量方法 |
-
2013
- 2013-02-07 CN CN201310049375.2A patent/CN103985652B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1618004A (zh) * | 2001-11-26 | 2005-05-18 | 特维特程序控制技术有限公司 | 用于测量半导体晶片中的应力的方法和装置 |
KR20070009210A (ko) * | 2005-07-15 | 2007-01-18 | 호서대학교 산학협력단 | 고속처리 고온공정에서 웨이퍼의 스트레스 측정장치 |
CN102023068A (zh) * | 2010-10-10 | 2011-04-20 | 徐建康 | 薄膜应力测量设备及其测量方法 |
CN102620868A (zh) * | 2012-03-10 | 2012-08-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | 具有垂直光路结构的薄膜应力测量装置及其应用 |
CN103985653A (zh) * | 2013-02-07 | 2014-08-13 | 北京智朗芯光科技有限公司 | 一种晶片应力测量方法 |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103985653A (zh) * | 2013-02-07 | 2014-08-13 | 北京智朗芯光科技有限公司 | 一种晶片应力测量方法 |
CN103985653B (zh) * | 2013-02-07 | 2017-03-08 | 北京智朗芯光科技有限公司 | 一种晶片应力测量方法 |
WO2015169007A1 (zh) * | 2014-05-06 | 2015-11-12 | 北京智朗芯光科技有限公司 | 自动实时快速检测晶片基底二维形貌的装置 |
CN105698706B (zh) * | 2014-11-26 | 2018-03-30 | 北京智朗芯光科技有限公司 | 自动检测晶片基底二维形貌的装置 |
CN105698706A (zh) * | 2014-11-26 | 2016-06-22 | 北京智朗芯光科技有限公司 | 自动检测晶片基底二维形貌的装置 |
CN105789083A (zh) * | 2016-05-27 | 2016-07-20 | 中南大学 | 一种光波导晶圆表面检测装置 |
CN105789083B (zh) * | 2016-05-27 | 2019-02-01 | 中南大学 | 一种光波导晶圆表面检测装置 |
CN106910694A (zh) * | 2017-03-07 | 2017-06-30 | 中国电子科技集团公司第三十八研究所 | 一种自动检测集成电路器件翘曲度的方法及装置 |
CN106910694B (zh) * | 2017-03-07 | 2019-09-10 | 中国电子科技集团公司第三十八研究所 | 一种自动检测集成电路器件翘曲度的方法及装置 |
CN108801610A (zh) * | 2018-07-09 | 2018-11-13 | 北京石晶光电科技股份有限公司济源分公司 | 一种激光检测晶片应力装置 |
CN111063634A (zh) * | 2019-11-12 | 2020-04-24 | 度亘激光技术(苏州)有限公司 | 监测装置和方法 |
CN111208063A (zh) * | 2020-03-03 | 2020-05-29 | 度亘激光技术(苏州)有限公司 | 反射光谱监测装置和方法 |
CN112577647A (zh) * | 2020-11-26 | 2021-03-30 | 苏州长光华芯光电技术股份有限公司 | 一种半导体激光器芯片的应力测试***及测试方法 |
CN112577647B (zh) * | 2020-11-26 | 2022-04-12 | 苏州长光华芯光电技术股份有限公司 | 一种半导体激光器芯片的应力测试***及测试方法 |
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CN103985652B (zh) | 2016-09-21 |
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Inventor after: Ma Tiezhong Inventor after: Liu Jianpeng Inventor after: Yan Dong Inventor after: Wang Linzi Inventor after: Jiao Hongda Inventor before: Li Chengmin Inventor before: Liu Jianpeng Inventor before: Yan Dong Inventor before: Ye Longmao Inventor before: Chen Yaqin Inventor before: Wang Linzi Inventor before: Jiao Hongda |
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Address after: 102206 Beijing City, Changping District Changping Road No. 97 Xinyuan Science Park B building room 503 Patentee after: BEI OPTICS TECHNOLOGY Co.,Ltd. Address before: 100191, Beijing, Zhichun Road, Haidian District No. 27 quantum core 402 room Patentee before: BEI OPTICS TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20190703 Address after: Room 503, Block B, Xinyuan Science Park, 97 Changping Road, Changping District, Beijing 102206 Patentee after: Ongkun Vision (Beijing) Technology Co.,Ltd. Address before: Room 503, Block B, Xinyuan Science Park, 97 Changping Road, Changping District, Beijing 102206 Patentee before: BEI OPTICS TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20230703 Address after: B701, Building 8, No. 97, Changping Road, Shahe Town, Changping District, Beijing 102200 (Changping Demonstration Park) Patentee after: Beijing Airui Haotai Information Technology Co.,Ltd. Address before: Room 503, Block B, Xinyuan Science Park, 97 Changping Road, Changping District, Beijing 102206 Patentee before: Ongkun Vision (Beijing) Technology Co.,Ltd. |
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