CN103984168B - Display panels and liquid crystal indicator - Google Patents
Display panels and liquid crystal indicator Download PDFInfo
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- CN103984168B CN103984168B CN201310050276.6A CN201310050276A CN103984168B CN 103984168 B CN103984168 B CN 103984168B CN 201310050276 A CN201310050276 A CN 201310050276A CN 103984168 B CN103984168 B CN 103984168B
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Abstract
Disclosed herein a kind of display panels and a kind of liquid crystal indicator.Wherein, display panels includes a thin film transistor base plate, an opposite substrate and a liquid crystal layer.Thin film transistor base plate has a substrate, a thin film transistor (TFT) and a cushion.Thin film transistor (TFT) is arranged on substrate, and has a grid, a source electrode, drain electrode and a channel layer, and grid is relative with channel layer and sets, and source electrode and drain electrode are respectively arranged on channel layer, and contact with channel layer.Cushion is arranged on substrate, and directly contacts the scope of light reflectance of the contact surface of channel layer, cushion and channel layer between 25%～80%.Opposite substrate is oppositely arranged with thin film transistor base plate.Liquid crystal layer is arranged between thin film transistor base plate and opposite substrate.
Description
Technical field
The present invention be about a kind of display panels and possess this display panels liquid crystal display dress
Put.
Background technology
Along with the progress of science and technology, display device is used in various field, especially liquid crystal the most widely
Display device, because having that build is frivolous, low power consumption and the advantageous characteristic such as radiationless, the most gradually
Replace conventional cathode ray tube display device, and apply to the electronic product of numerous species, such as, move
Phone, portable multimedia device, notebook computer, LCD TV and liquid crystal screen etc..
As a example by liquid crystal indicator, liquid crystal indicator mainly comprises a display panels (LCD
And a backlight module (Backlight Module) Panel).Wherein, to have one thin for display panels
The liquid crystal layer that film transistor substrate, a colored optical filtering substrates and are located between two substrates, and two substrates
The pixel that multiple array is arranged can be formed with liquid crystal layer.The uniform light of one light source can be divided by backlight module
Cloth is to display panels, and forms an image via each pixel display color.
For active-matrix (active matrix) formula liquid crystal indicator, thin film transistor (TFT) is conduct
The pixel switch element of display panels.Wherein, thin film transistor (TFT) has a grid (gate), a drain electrode
(drain), a source electrode (source) and a channel layer, grid electrically connects with scan line and is controlled and opens,
Source electrode electrically connects to accept signal with data wire, and drains and electrically connect with pixel electrode.By above-mentioned connection
Mode, when grid receives scanning signal, thin film transistor (TFT) can be opened and data wire is sent
Signal can arrive pixel electrode via source electrode, channel layer and drain electrode, now pixel electrode and common electrode it
Between form a liquid crystal capacitance, thereby can change penetrance and reach control gray-scale intensity purpose.
But, owing to the channel layer of thin film transistor (TFT) exposes to the open air completely under the light of backlight irradiates, therefore
The light leakage current (photo leakage) that can cause thin film transistor (TFT) increases and affects the normal of thin film transistor (TFT)
Running so that liquid crystal indicator produces flicker (flicker) or the problem of cross-talk (crosstalk), this
Phenomenon especially becomes apparent from more than 10,000 nits (nits) above person in backlight intensity.Prior art is
A light shield layer is set between the substrate and channel layer of display panels, is incident to channel layer to stop
Light, and then improve the light leakage current of thin film transistor (TFT).But, arranging light shield layer will increase liquid crystal display
The process complexity of device.
Therefore, how a kind of display panels and liquid crystal indicator are provided, light shield layer can not used
In the case of reduce the light leakage current of thin film transistor (TFT), it has also become one of important topic.
Summary of the invention
Because above-mentioned problem, the purpose of the present invention can be in the case of not using light shield layer for offer one
Reduce display panels and the liquid crystal indicator of the light leakage current of thin film transistor (TFT).
For reaching above-mentioned purpose, according to a kind of display panels of the present invention include a thin film transistor base plate,
One opposite substrate and a liquid crystal layer.Thin film transistor base plate has a substrate, a thin film transistor (TFT) and
Cushion.Thin film transistor (TFT) is arranged on substrate, and has a grid, a source electrode, a drain electrode and
Channel layer, grid is relative with channel layer and sets, and source electrode and drain electrode are respectively arranged on channel layer, and with logical
Channel layer contacts.Cushion is arranged on substrate, and directly contacts channel layer, cushion and channel layer
The scope of the light reflectance of contact surface is between 25%～80%.Opposite substrate and thin film transistor (TFT) base
Plate is oppositely arranged.Liquid crystal layer is arranged between thin film transistor base plate and opposite substrate.
For reaching above-mentioned purpose, according to a kind of liquid crystal indicator of the present invention include a display panels with
And a backlight module.Display panels comprises a thin film transistor base plate, an opposite substrate and a liquid crystal
Layer, thin film transistor base plate has a substrate, a thin film transistor (TFT) and a cushion, and thin film transistor (TFT) sets
It is placed on substrate, and there is a grid, a source electrode, drain electrode and a channel layer, grid and a channel layer
Relatively setting, source electrode and drain electrode are respectively arranged on channel layer, and contact with channel layer, and cushion is arranged
On substrate, and directly contact channel layer, the light reflectance of the contact surface of cushion and channel layer
Scope is between 25%～80%.Opposite substrate is oppositely arranged with thin film transistor base plate, and liquid crystal layer sets
It is placed between thin film transistor base plate and opposite substrate.It is relative that backlight module is arranged at thin film transistor base plate
Opposite side in opposite substrate.
In one embodiment, cushion is between channel layer and substrate, and grid is positioned on channel layer.
In one embodiment, thin film transistor base plate has more an element region and a penetrating region, and cushion makes
It is formed at element region and penetrating region by same technique.
In one embodiment, cushion comprises one first cushion and one second cushion, the first cushion
Being arranged on substrate, the second cushion is arranged on the first cushion.
In one embodiment, the material of the first cushion or the second cushion comprise silicon nitride, silicon oxide,
Silicon oxynitride, carborundum, aluminium oxide or hafnium oxide, or a combination thereof.
In one embodiment, the thickness of the second cushion is x, and reflectance is y, and thickness x and reflectance
Y meets below equation:
Wherein, xcRefractive index/2 × the second cushion of the=the first buffer layer thickness × the first cushion
Refractive index, the refractive index of w=wavelength of backlight/4 × the second cushion, A=light reflectance is maximum
Value-light reflectance minima/2, y0It is the thickness of the second cushion when being 0, the light of contact surface F
Reflectance.
In one embodiment, the thickness of the first cushion between 50～70 nanometers, the second cushion
Thickness is between 200～230 nanometers.
In one embodiment, the scope of the light reflectance of the contact surface of cushion and channel layer between
Between 30%～60%.
From the above, because of according in the display panels of the present invention and liquid crystal indicator, by will be slow
Rush layer to be arranged on substrate, and directly contact channel layer, and make the contact surface of cushion and channel layer
The scope of light reflectance between 25%～80%.Thereby, can be in the situation being not provided with light shield layer
Under, the light of thin film transistor (TFT) is reduced by improving the light reflectance of the contact surface of cushion and channel layer
Leakage current.In one embodiment of this invention, fix the thickness of the first cushion, and by adjusting second
The thickness of cushion, makes the light reflectance of contact surface for the highest, thereby can reduce the light of thin film transistor (TFT)
Leakage current, it is to avoid liquid crystal indicator produces flicker or the problem of cross-talk.
Accompanying drawing explanation
Accompanying drawing described herein is used for providing a further understanding of the present invention, constitutes of the application
Point, it is not intended that limitation of the invention.In the accompanying drawings:
Fig. 1 is the cross-sectional schematic of a kind of display panels of present pre-ferred embodiments.
Fig. 2 is the schematic diagram of the display panels of another enforcement aspect of present pre-ferred embodiments.
Fig. 3 is the schematic diagram of a kind of liquid crystal indicator of present pre-ferred embodiments.
Fig. 4 is the cushion of Fig. 1 and the light reflectance of the contact surface of channel layer and the thickness of the second cushion
The relation schematic diagram of degree.
Fig. 5 is the wavelength relation schematic diagram with the light reflectance of contact surface of different backlight light.
Fig. 6 is under the intensity of different backlight light, the light leakage current of thin film transistor (TFT) and the light of prior art
The comparison schematic diagram of leakage current.
Drawing reference numeral illustrates:
1,1a: thin film transistor base plate
11: substrate
12: cushion
121: the first cushions
122: the second cushions
131: the first insulating barriers
132: the second insulating barriers
141: the first dielectric layers
142: the second dielectric layers
15: planarization layer
16: pixel electrode layer
17: passivation layer
2: opposite substrate
3: liquid crystal layer
4: liquid crystal indicator
5: backlight module
A: element region
B: transparent area
C: channel layer
D: drain electrode
F: contact surface
G: grid
L, L1: dotted line
L1: solid line
O: through hole
P1, P2: display panels
S: source electrode
T, Ta: thin film transistor (TFT)
Detailed description of the invention
Hereinafter with reference to correlative type, the display panels according to present pre-ferred embodiments and liquid crystal are described
Display device, the most identical element will be illustrated with identical reference marks.
For convenience of explanation, in present invention diagram, the height of shown each element and the size relationship of width (compare
Example) it is only signal, do not represent the size relationship of reality.
Refer to shown in Fig. 1, it is the section view of a kind of display panels P1 of present pre-ferred embodiments
Schematic diagram.
Display panels P1 is an active matrix (active matrix) display panels, and has
One thin film transistor base plate 1, opposite substrate 2 and a liquid crystal layer 3 being located between two substrates.To
Substrate 2 is oppositely arranged with thin film transistor base plate 1, and liquid crystal layer 3 is arranged at thin film transistor base plate 1
And between opposite substrate 2.In this, opposite substrate 2 can have a filter layer (figure does not shows), to become
It it is a colored optical filtering substrates.Opposite substrate 2 is the material of a light-permeable, e.g. glass, quartz or class
Like thing.Arrange additionally, thin film transistor base plate 1, opposite substrate 2 and liquid crystal layer 3 can form multiple array
Pixel, and each pixel is respectively provided with an element region and a transparent area.In this, Fig. 1 is for indicating liquid crystal
Show in panel P1, an element region A on thin film transistor base plate 1 and the signal of a transparent area B
Figure.
Thin film transistor base plate 1 has substrate 11, thin film transistor (TFT) T, a cushion 12.It addition,
Thin film transistor base plate 1 has more one first insulating barrier 131,1 second insulating barrier 132,1 first dielectric
Layer 141 and one second dielectric layer 142.
Substrate 11 is the material of a light-permeable, on the implementation, can be such as glass, quartz or the like,
Plastic cement, rubber, glass fibre or other macromolecular materials, can be preferably a borate alkali-free glass base
Plate (alumino silicate glass substrate).When practice, the base of thin film transistor base plate 1
Plate 11 and opposite substrate 2 can be selected for identical or different material, such as substrate 11 and use borate alkali-free
Glass substrate, and opposite substrate 2 uses potash glass substrate.It addition, display panels P1 more can include
One black-matrix layer (figure does not shows), on the direction of vertical substrate 11, black-matrix layer can cover unit
Part district A, makes light cannot pass element region A, and the region not covered by black-matrix layer is transparent area B.
Wherein, black-matrix layer may be disposed on thin film transistor base plate 1 or on opposite substrate 2.When black square
When battle array layer is arranged at thin film transistor base plate 1, a BOA(BM on array can be become) substrate.
Thin film transistor (TFT) T is arranged on substrate 11, and is positioned on cushion 12.In this, thin film is brilliant
Body pipe T-shaped becomes element region A.Wherein, thin film transistor (TFT) T can be grid on top gate() type thin
Film transistor T, or be grid under bottom gate() thin film transistor (TFT) of type.In the present embodiment, with
As a example by the thin film transistor (TFT) T of top gate, therefore as it is shown in figure 1, cushion 12 is positioned at thin film transistor (TFT) T
And between substrate 11.Wherein, thin film transistor (TFT) T has a grid G, a channel layer C, a source S
And a drain D.Grid G is relative with channel layer C and sets, and is positioned on channel layer C, and cushion
12 between substrate 11 and channel layer C, and directly contact channel layer C, to have a contact surface F.
Wherein, the material of grid G is metal (for example, aluminum, copper, silver, molybdenum or titanium) or its alloy institute structure
The single or multiple lift structure become.Part drives the wire of signal in order to transmit, it is possible to use same with grid G
Layer and the structure of same technique, be electrical connected, such as scan line each other.
Channel layer C opposing gate G position is arranged on cushion 12.On the implementation, channel layer C is
Semi-conductor layer, and it is for example and without limitation to polysilicon (Polysilicon) material manufacture.It addition, passage
The material of layer C is such as but not limited to comprising monoxide quasiconductor.Aforesaid oxide semiconductor includes oxygen
Compound, and oxide include indium, gallium, zinc and stannum one of them, for example, indium gallium zinc (Indium
Gallium Zinc Oxide, IGZO).It addition, source S and drain D are respectively arranged at channel layer C
On, and source S contacts with channel layer C respectively with drain D, in thin film transistor (TFT) T channel layer C not
During conducting, both are electrically isolated.Wherein, the material of source S and drain D can be metal (such as aluminum,
Copper, silver, molybdenum or titanium) or the single or multiple lift structure that constituted of its alloy.Additionally, part is in order to pass
The wire of defeated driving signal, it is possible to use with source S with drain D with layer and the structure of same technique, example
Such as data wire.
It is noted that in the present embodiment, source S and drain D are directly arranged on channel layer C,
Without an etch-stop (etch stop) layer.But, in other embodiments, thin film transistor (TFT)
Source electrode also may be disposed on etch stop layer with drain electrode, and one end of source electrode and drain electrode self etching respectively terminates
The opening of layer contacts with channel layer.Wherein, etch stop layer can be the oxidation of organic material for example, organosilicon
Compound, or single-layer inorganic material such as silicon nitride, silicon oxide, silicon oxynitride, carborundum, aluminium oxide,
Hafnium oxide or the multiple structure of above-mentioned material combination.
Cushion 12 is arranged on substrate 11, and directly contact channel layer C.Cushion 12 can comprise
One or more layers structure, and use same technique to be formed on element region A and penetrating region B.In this reality
Execute in example, cushion 12 as a example by comprising one first cushion 121 and one second cushion 122, and
One cushion 121 and the second cushion 122 are from bottom to top to be sequentially formed on substrate 11.Wherein,
One cushion 121 is arranged on substrate 11, and the second cushion 122 is arranged on the first cushion 121,
Make the second cushion 122 directly contact channel layer C and and there is between channel layer C contact surface F.The
The material of one cushion 121 and the second cushion 122 can be identical or differ, and can comprise nitrogen respectively
SiClx, silicon oxide, silicon oxynitride, carborundum, aluminium oxide or hafnium oxide.In this, with the first buffering
Layer 121 is silicon nitride, and as a example by the second cushion 122 silicon oxide.Wherein, cushion 12 and channel layer
The scope of the light reflectance of the contact surface F of C is between 25%～80%.In other words, the present invention can be in
In the case of being not provided with light shield layer, by improving cushion 12(the second cushion 122) and channel layer C
The light reflectance of contact surface F reduce the light leakage current of thin film transistor (TFT) T, below can the most specifically
Bright.
First insulating barrier 131 is arranged on channel layer C, and covers channel layer C.In this, the first insulation
Layer 131 covers channel layer C, and contacts with the second cushion 122.Second insulating barrier 132 is arranged at
On one insulating barrier 131, and it is positioned under grid G.Delay it addition, the first insulating barrier 131 is arranged at second
Rush between layer 122 and the first dielectric layer 141, and source S and drain D be each passed through the first insulating barrier 131,
First dielectric layer 141 and the second dielectric layer 142, and contact with channel layer C.First insulating barrier 131 and
Second insulating barrier 132 can be respectively one or more layers structure, and its material can comprise silicon nitride, silicon oxide,
Silicon oxynitride, carborundum, aluminium oxide or hafnium oxide, or a combination thereof.In this, the first insulating barrier 131
For silicon oxide, as a example by the second insulating barrier is silicon nitride.
First dielectric layer 141 is arranged on the first insulating barrier 131, and grid G is completely covered, and second
Dielectric layer 142 is arranged on the first dielectric layer 141.In this, the first dielectric layer 141 and the second dielectric layer
142 are sequentially formed on the first insulating barrier 131.Wherein, the first dielectric layer 141 and the second dielectric layer 142
Material can comprise silicon nitride, silicon oxide, silicon oxynitride, carborundum, aluminium oxide or hafnium oxide respectively,
Or a combination thereof.In this, with the first dielectric layer 141 as silicon nitride, and the second dielectric layer 142 is silicon oxide
As a example by.
It addition, thin film transistor base plate 1 has more planarization layer 15 and a pixel electrode layer 16, smooth
Change layer 15 to be arranged on the second dielectric layer 142, and cover the second dielectric layer 142, to reach planarization
Effect.The material of planarization layer 14 can such as comprise organic or inorganic insulating material, and the most poly-naphthalene two
Formic acid glycol ester (PEN), acryl (PMMA) or polyimides (PI), in this, not
It is limited.Pixel electrode layer 16 is arranged on planarization layer 15, and electrically connects with drain D.In
This, pixel electrode layer 16 is electrically connected with drain D by the through hole O on planarization layer 15.Wherein,
The material of pixel electrode layer 16 can for example, indium tin oxide (ITO), indium-zinc oxide (IZO), aluminum
Zinc oxide (AZO), cadmium tin-oxide (CTO), stannum oxide (SnO2) or zinc oxide (ZnO)
Deng transparent conductive material, do not limit in this.
Additionally, thin film transistor base plate 1 more can include community electrode layer and passivation layer (figure does not shows),
Common electrode layer is arranged on planarization layer 14, and passivation layer may be disposed on common electrode layer, and covers
Part common electrode layer.It addition, pixel electrode layer 16 may be disposed on passivation layer, and can covering part blunt
Change layer.
Refer to shown in Fig. 2, it is the display panels of another enforcement aspect of present pre-ferred embodiments
The schematic diagram of P2.
Primary difference is that with the display panels P1 of Fig. 1, the thin film of display panels P2 is brilliant
Thin film transistor (TFT) Ta on body pipe substrate 1a is the thin film transistor (TFT) of a bottom gate type, therefore such as figure
Shown in 2, cushion 12(comprises the first cushion 121 and the second cushion 122) be positioned at grid G with
Between channel layer C, and channel layer C is positioned on grid G.In this, grid G is arranged at substrate 22
On, and directly contact with substrate 11.It addition, the first cushion 121 and the second cushion 122(also may be used
It is referred to as gate dielectric) it is sequentially arranged in grid G, and grid G is completely covered.The present embodiment thin
Film transistor substrate 1a does not have first insulating barrier the 131, second insulating barrier of thin film transistor base plate 1
132, the first dielectric layer 141 and the second dielectric layer 142, but there is passivation layer 17, planarization layer
15 and a pixel electrode layer 16.Wherein, passivation layer 17 is arranged at source S, drain D and channel layer C
On, and cover film transistor Ta.Planarization layer 15 is arranged on passivation layer 17, and pixel electrode layer
16 are arranged on planarization layer 15, and are electrically connected with drain D by through hole O.Wherein, passivation layer 17
Material can be inorganic, can be such as silicon nitride, silicon oxide, silicon oxynitride, carborundum, oxidation
Aluminum, hafnium oxide or the multiple structure of above-mentioned material, in this as a example by one layer of silicon nitride layer.
Additionally, the technical characteristic of other element of display panels P2 can refer to display panels P1
Similar elements, repeat no more in this.
It addition, refer to shown in Fig. 3, it is a kind of liquid crystal indicator 4 of present pre-ferred embodiments
Schematic diagram.
Liquid crystal indicator 4 includes a display panels P1 and a backlight module 5.Backlight module 5
It is arranged at the thin film transistor base plate 1 opposite side relative to opposite substrate 2 of display panels P1, and
Emit beam, make light from thin film transistor base plate 1 by liquid crystal layer 3, then penetrated by opposite substrate 2.
To those skilled in the art, backlight module 5 is a prior art, repeats no more.In addition, it is possible to will
Display panels P1 is replaced with above-mentioned display panels P2, to become the liquid crystal of another embodiment
Showing device.Wherein, display panels P1 and display panels P2 is in above-mentioned middle detailed description, no longer
Repeat.
Hereinafter, illustrate the present invention how in the case of not setting up light shield layer, how by improving cushion
The light reflectance of the contact surface F of 12 and channel layer C reduces the light leakage current of thin film transistor (TFT) T.
Refer to shown in Fig. 1, Fig. 4 and Fig. 5, wherein, Fig. 4 is cushion 12 and the channel layer of Fig. 1
The light reflectance of the contact surface F of C and the relation schematic diagram of the thickness of the second cushion 122, and Fig. 5
Relation schematic diagram for wavelength and the light reflectance of contact surface F of different backlight light.
Please also refer to shown in Fig. 5, wherein, dotted line L is the frequency spectrum of backlight light.As shown in Figure 5, the back of the body
The peak value of the wavelength of light (white light) of light source is mainly 450 nanometers (nm).Therefore, thin film to be reduced
The light reflectance that wavelength is 450 ran mainly to be improved by the light leakage current of transistor T.Cause
This, the present invention based on this premise under, the means of proposition be adjust cushion 12 thickness anti-to improve it
Penetrate rate, thereby reduce the light leakage current of thin film transistor (TFT) T.Wherein, when producing construction on contact surface F
Property interfere time, the reflectance of contact surface F can be maximum.
Therefore, as shown in Figure 4, the present embodiment propose cushion 12(in this be the second cushion 122)
The equation of reflectance y of thickness x and contact surface F as follows:
Wherein, the dotted line of Fig. 4 is a sinusoidal wave form, and solid line is for thick by adjusting the second cushion 122
Degree, and the result of the actual reflectance measuring contact surface F.When sinusoidal wave value is 1, reflectance y
For the highest.In the present embodiment, in order to make reflectance improve, and there is the cushion of suitable thickness, the
The thickness of one cushion 121 between 50～70 nanometers, the thickness of the second cushion 122 between
Between 200～230 nanometers.In the present embodiment, fix the thickness of the first cushion 121 be 56 nanometers (because of
The thickness adjusting the first cushion 121 is little on the impact of reflectance), and adjust the second cushion 122
Thickness, thereby to improve the light reflectance of contact surface F.Wherein, xc=the first buffer layer thickness ×
The refractive index of refractive index/2 × the second cushion of the first cushion, w=wavelength of backlight/4 × the second
The refractive index of cushion, A=light reflectance maximum-light reflectance minima/2, y0It is
When the thickness of two cushions is 0, the light reflectance of contact surface F (the most only has the first cushion 121
Time, the light reflectance of contact surface F).In this, xcIt is based on the first cushion 121 and the second buffering
Depending on the refractive index of layer 122, and xc=50nm × n1/2 × n2, n1 are the first cushion 121
Refractive index, and the refractive index that n2 is the second cushion 122.It addition, w is based on incident ray wavelength
Depending on refractive index n2 of λ and the second cushion 122, and w=λ/4 × n2(λ=450nm；If incident illumination
During the peak value difference of wavelength X, then w will follow difference).Additionally, the sinusoidal wave amplitude that A is Fig. 4.
It is computed learning, xc=206.74, w=755.91, A=16.45, and y0=24.51。
In this, the scope of cushion 12 and the light reflectance of the contact surface F of channel layer C can be between
Between 30%～60%.In the present embodiment, when the thickness of the first cushion 121 is 56 nanometers, and the
During the thickness for example, 217nm of two cushions 122, the value that can make sine wave is maximum, that is contact surface
The light reflectance y of F is maximum, and reflectance can reach about 40%.It addition, in other enforcement state
In sample, other thickness is also up to maximum reflectance, such as in Fig. 4, when the second cushion 122
When thickness is about 60nm or 360nm, the most available maximum reflectance.
It addition, referring again to shown in Fig. 5, in this, dotted line L1 is in prior art, the first cushion
Thickness is 50nm and the second buffer layer thickness is the light reflectance obtained by 130nm.It addition, solid line
L2 is in the present embodiment, and the thickness of the first cushion is 56nm, and the thickness of the second cushion is 217nm
Obtained light reflectance.Therefore, can substantially find, the present embodiment is by adjusting the first cushion
Thickness is 56nm, and when the thickness of the second cushion is 217nm, can be (white in the wavelength of light of backlight
Light) in the case of 400nm～490nm so that it is light reflectance is high more quite a lot of than existing.Therefore,
The light leakage current of thin film transistor (TFT) T can be reduced.
Then, refer to shown in Fig. 6, it is under the intensity of different backlight light, the light of thin film transistor (TFT)
The comparison schematic diagram of the light leakage current of leakage current and prior art.In this, solid line is in prior art, the
The thickness of one cushion is 50nm and song that the second buffer layer thickness is the light leakage current obtained by 130nm
Line, and dotted line is in the present invention, the thickness of the first cushion is 56nm, and the thickness of the second cushion is
The curve of the light leakage current obtained by 217nm.Can substantially be found by Fig. 6, compare with existing, in not
With under light intensity, the present embodiment (fixes the first cushion by adjusting the thickness of the second cushion 122
The thickness of 121) light reflectance of contact surface F can be improved, thereby can significantly decrease thin film transistor (TFT) T
Light leakage current.
In sum, because of according in the display panels of the present invention and liquid crystal indicator, by will be slow
Rush layer to be arranged on substrate, and directly contact channel layer, and make the contact surface of cushion and channel layer
The scope of light reflectance between 25%～80%.Thereby, can be in the situation being not provided with light shield layer
Under, the light of thin film transistor (TFT) is reduced by improving the light reflectance of the contact surface of cushion and channel layer
Leakage current.In one embodiment of this invention, fix the thickness of the first cushion, and by adjusting second
The thickness of cushion, makes the light reflectance of contact surface for the highest, thereby can reduce the light of thin film transistor (TFT)
Leakage current, it is to avoid liquid crystal indicator produces flicker or the problem of cross-talk.
The foregoing is only illustrative, rather than be restricted.Any spirit and scope without departing from the present invention,
And the equivalent modifications that it is carried out or change, it is intended to be limited solely by right.
Claims (10)
1. a display panels, including:
One thin film transistor base plate, has:
One substrate；And
One thin film transistor (TFT), is arranged on described substrate, and have a grid, a source electrode, one
Drain electrode and a channel layer, described grid is relative with described channel layer and sets, and described source electrode and described drain electrode divide
It is not arranged on described channel layer, and contacts with described channel layer；
One opposite substrate, is oppositely arranged with described thin film transistor base plate；And
One liquid crystal layer, is arranged between described thin film transistor base plate and described opposite substrate,
It is characterized in that, described thin film transistor base plate also includes that a cushion, described cushion set
Being placed on described substrate and directly contact described channel layer, described cushion contacts with described channel layer
The scope of the light reflectance in face is between 25%～80%.
2. display panels as claimed in claim 1, it is characterised in that described cushion is positioned at institute
Stating between channel layer and described substrate, described grid is positioned on described channel layer.
3. display panels as claimed in claim 1, it is characterised in that described thin film transistor (TFT) base
Plate has more an element region and a penetrating region, and described cushion uses same technique to be formed at described element
District and described penetrating region.
4. display panels as claimed in claim 1, it is characterised in that described cushion comprises
First cushion and one second cushion, described first cushion is arranged on described substrate, and described second
Cushion is arranged on described first cushion.
5. display panels as claimed in claim 4, it is characterised in that described first cushion or
The material of described second cushion comprise silicon nitride, silicon oxide, silicon oxynitride, carborundum, aluminium oxide,
Or hafnium oxide, or a combination thereof.
6. display panels as claimed in claim 4, it is characterised in that described first cushion
Thickness is between 50～70 nanometers, and the thickness of described second cushion is between 200～230 nanometers.
7. display panels as claimed in claim 1, it is characterised in that described cushion is with described
The scope of the light reflectance of the contact surface of channel layer is between 30%～60%.
8. a liquid crystal indicator, including:
One display panels, comprises a thin film transistor base plate, an opposite substrate and a liquid crystal layer, institute
State thin film transistor base plate and there is a substrate, a thin film transistor (TFT) and a cushion, described thin film transistor (TFT)
It is arranged on described substrate, and there are a grid, a source electrode, drain electrode and a channel layer, described grid
Pole is relative with described channel layer and sets, and described source electrode and described drain electrode are respectively arranged on described channel layer,
And contact with described channel layer, described opposite substrate is oppositely arranged with described thin film transistor base plate, described
Liquid crystal layer is arranged between described thin film transistor base plate and described opposite substrate；And
One backlight module, is arranged at the described thin film transistor base plate opposite side relative to described opposite substrate,
It is characterized in that, described cushion is arranged on described substrate, and directly contacts described channel layer,
The scope of the light reflectance of the contact surface of described cushion and described channel layer is between 25%～80%.
9. liquid crystal indicator as claimed in claim 8, it is characterised in that described cushion comprises
First cushion and one second cushion, described first cushion is arranged on described substrate, and described second
Cushion is arranged on described first cushion.
10. liquid crystal indicator as claimed in claim 9, it is characterised in that described second cushion
Thickness be x, described light reflectance is y, and described thickness x and described light reflectance y meet with
Lower equation:
Wherein, xcRefractive index/2 of=described first buffer layer thickness × described first cushion × described
The refractive index of the second cushion, the refractive index of w=wavelength of backlight/4 × described second cushion, A=
Described light reflectance maximum-described light reflectance minima/2, y0For described second cushion
Thickness when being 0, the light reflectance of described contact surface.
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| US10191345B2 (en) * | 2016-11-01 | 2019-01-29 | Innolux Corporation | Display device |
| CN107068770B (en) * | 2017-05-04 | 2019-12-06 | 京东方科技集团股份有限公司 | thin film transistor, preparation method thereof, array substrate and display panel |
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| CN1447156A (en) * | 2002-03-27 | 2003-10-08 | 体埃弗皮迪株式会社 | Wiring substrate for display device and its mfg. method |
| TW200824126A (en) * | 2006-11-30 | 2008-06-01 | Tpo Displays Corp | Image display system and manufacturing method of multi-gates thin film transistor |
| CN101546732A (en) * | 2007-12-06 | 2009-09-30 | 统宝光电股份有限公司 | Thin film transistor manufacturing method and display having the same |
| CN101944485A (en) * | 2009-07-03 | 2011-01-12 | 株式会社半导体能源研究所 | Manufacturing method of semiconductor device |
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|---|---|---|---|---|
| CN1447156A (en) * | 2002-03-27 | 2003-10-08 | 体埃弗皮迪株式会社 | Wiring substrate for display device and its mfg. method |
| TW200824126A (en) * | 2006-11-30 | 2008-06-01 | Tpo Displays Corp | Image display system and manufacturing method of multi-gates thin film transistor |
| CN101546732A (en) * | 2007-12-06 | 2009-09-30 | 统宝光电股份有限公司 | Thin film transistor manufacturing method and display having the same |
| CN101944485A (en) * | 2009-07-03 | 2011-01-12 | 株式会社半导体能源研究所 | Manufacturing method of semiconductor device |
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