CN103972378A - LED light-emitting device and packaging method thereof - Google Patents
LED light-emitting device and packaging method thereof Download PDFInfo
- Publication number
- CN103972378A CN103972378A CN201410231231.3A CN201410231231A CN103972378A CN 103972378 A CN103972378 A CN 103972378A CN 201410231231 A CN201410231231 A CN 201410231231A CN 103972378 A CN103972378 A CN 103972378A
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- weldment
- lens
- becket
- ceramic substrate
- emitting device
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000004806 packaging method and process Methods 0.000 title abstract description 7
- 239000000919 ceramic Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 238000007789 sealing Methods 0.000 claims abstract description 17
- 238000005516 engineering process Methods 0.000 claims abstract description 16
- 238000003466 welding Methods 0.000 claims abstract description 13
- 238000005219 brazing Methods 0.000 claims abstract description 5
- 238000012545 processing Methods 0.000 claims description 21
- 238000005476 soldering Methods 0.000 claims description 19
- 238000005202 decontamination Methods 0.000 claims description 15
- 230000003588 decontaminative effect Effects 0.000 claims description 15
- 238000005538 encapsulation Methods 0.000 claims description 14
- 229910000679 solder Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 10
- 238000012856 packing Methods 0.000 claims description 10
- 230000005622 photoelectricity Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000012958 reprocessing Methods 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 238000004458 analytical method Methods 0.000 claims description 6
- 210000002615 epidermis Anatomy 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 229910000851 Alloy steel Inorganic materials 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 230000035939 shock Effects 0.000 abstract description 3
- 238000002844 melting Methods 0.000 abstract description 2
- 230000008018 melting Effects 0.000 abstract description 2
- 239000011368 organic material Substances 0.000 abstract description 2
- 238000002310 reflectometry Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000741 silica gel Substances 0.000 description 4
- 229910002027 silica gel Inorganic materials 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910001374 Invar Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
A method for packaging an LED light-emitting device is characterized by comprising the following steps: (1) welding the metal ring on the periphery above the ceramic substrate by a brazing process, so that the metal ring and the ceramic substrate form a cavity with a concave cross section; (2) fixing the LED chip in the groove of the cavity; (3) fixing the welding part at the edge of the lens by a photoelectric window sealing technology; (4) and connecting the welding part and the metal ring together by using a parallel seal welding mode. The invention aims to solve the problem that an ultraviolet LED device is not suitable for being packaged by using organic materials, and improve the stability and reliability of the LED light-emitting device; the problem of the chip can not bear the high temperature is solved, the local melting welding is realized by adopting parallel sealing welding, direct high-temperature heating is not needed, the thermal shock to the LED chip is reduced, the sealing process is more efficient and faster, the inorganic airtight sealing of devices is realized, and the stability and the reliability of related devices are ensured.
Description
[technical field]
The present invention relates to a kind of light-emitting device of inorganic air-tight packaging, can be applicable to the high reliability encapsulation of LED, especially for the high reliability packaging of infrared, ultraviolet leds etc.
[background technology]
Along with the development of LED technology, the encapsulation wave band of LED is gradually toward near ultraviolet, deep ultraviolet future development, and power is also toward the development of high-power aspect.Yet adopt the encapsulation of traditional organic silica gel material, such as, direct insertion LED adopts epoxy encapsulation more, adopting surface mounted LED adopts silicones or silica gel packaging more, and this type of organosilicon material is under long-time service condition, because the impact of the factors such as water, light, heat was easily lost efficacy, cause the sharp-decay of the luminous flux, radiant flux etc. of device, even cause component failure.For high power LED integrated light source, due to a variety of causes, as situations such as chip heating, heat radiation deficiencies, cause device package glue surface temperature too high, packaging plastic lost efficacy gradually under light and hot acting in conjunction, and then caused component failure.
[summary of the invention]
One of technical problem to be solved by this invention is to provide a kind of LED light-emitting device, at solution uv-LED device, is not suitable for using on the basis of organic material encapsulation problem, adopts inorganic material to encapsulate, and improves stability and the reliability of LED light-emitting device.
Two of technical problem to be solved by this invention is to provide a kind of LED method for packing, solved the situation that LED chip can not bear high temperature, adopt parallel soldering and sealing to realize local melting welding, without direct high-temperature heating, reduced the thermal shock to LED chip, process for sealing is more efficient, quick, realizes the inorganic hermetic seal of device, guarantees stability and the reliability of related device.
The present invention is for addressing the above problem, following technical scheme of the present invention:
A LED light-emitting device, it includes:
Ceramic substrate, its top layer is plane;
Becket, is arranged on ceramic substrate upper periphery;
LED chip;
Weldment;
Lens, are positioned at becket top;
Described ceramic substrate and the becket of its upper periphery form analyses and observe state for the cavity of " recessed " font, and described LED chip is arranged in the groove of this cavity, between described becket and ceramic substrate, by welding manner, links together; On described ceramic substrate, set up heat conduction copper layer; At described rims of the lens, be provided with one deck weldment, described weldment links together with the mode that becket welds by parallel soldering and sealing.
In to the improvement project of above-mentioned a kind of LED light-emitting device, in described becket surface electrical, be coated with the metal film that one deck has high reflectance.
In to the improvement project of above-mentioned a kind of LED light-emitting device, described weldment is expansion alloy or stainless steel material.
In to the improvement project of above-mentioned a kind of LED light-emitting device, described becket be can with the expansion alloy of ceramic hermetic seal.
A method for packing for LED light-emitting device, includes following steps:
(1) by soldering processes, becket is welded on to the upper periphery of ceramic substrate, becket and ceramic substrate is formed and analyse and observe state for the cavity of " recessed " font;
(2) LED chip is fixed in the groove of described cavity;
(3) by photoelectricity optical window encapsulation technology, weldment is fixed on to the edge of lens;
(4) utilize the mode of parallel soldering and sealing that weldment and becket are linked together.
In to the improvement project of a kind of above-mentioned LED light emitting device package method, the technique of described soldering is:
(1) becket and two parts of ceramic substrate are deoiled, decontamination is cleaned and dry processing;
(2) in the position of described becket bottom or the corresponding becket of ceramic substrate upper epidermis, add solder layer;
(3) correspondence position to ceramic substrate upper epidermis by the contraposition of becket bottom, in vacuum or have under the state of protective gas, carries out soldering processing, and becket is fixed on ceramic substrate.
In to the improvement project of a kind of above-mentioned LED light emitting device package method, described photoelectricity optical window encapsulation technology technique is:
A, first lens and weldment are deoiled, decontamination is cleaned and dry processing;
B, lens and weldment are carried out to contraposition assembling;
C, whole lens are heated to molten condition, make lens fixedly be adhered on weldment;
D, destressing reprocessing is carried out in the junction of lens and weldment.
In to the improvement project of a kind of above-mentioned LED light emitting device package method, described photoelectricity optical window encapsulation technology technique is:
A, the region that need to weld at weldment or lens in advance plate layer of metal solder layer;
B, more pretreated lens and weldment are deoiled, decontamination is cleaned and dry processing,
Then lens and weldment are carried out to contraposition assembling;
C, whole lens and weldment are heated, make the brazing metal fusing of weldment and lens weld part, lens are fixedly adhered on weldment;
D, destressing reprocessing is carried out in the junction of lens and weldment.
In to the improvement project of a kind of above-mentioned LED light emitting device package method, described photoelectricity optical window encapsulation technology technique is:
A, first lens and weldment are deoiled, decontamination is cleaned and dry processing;
B, weldment is carried out to pre-oxidation treatment;
C, lens, glass solder and weldment are assembled;
D, lens and weldment are heated, glass solder starts softening molten sintering, and weldment is fixedly connected with lens;
F, the weldment linking together and lens are carried out to redox processing;
E, destressing reprocessing and metal surface protection are carried out in the junction of lens and weldment process.
In to the improvement project of a kind of above-mentioned LED light emitting device package method, described Parallel Seam Sealing Technology is:
(1) weldment and two parts of becket are deoiled, decontamination is cleaned and dry processing;
(2) becket and weldment are carried out to contraposition assembling;
(3) place soldering tip being connected with weldment becket positions, and uses the weldering of continuous impulse seam, and becket and weldment are fixed up.
Owing to having adopted technique scheme, compare the packaged type of traditional organic silica gel, the present invention adopts the mode of welding to encapsulate, life-span and the stability of LED light-emitting device have been improved, significantly be reduced in the thermal shock in level Hermetic Package process, LED chip being caused, because ceramic substrate adopts planar structure, technology difficulty and the cost of Substrate manufacture have significantly been reduced, be plated in the high reflected coat layer on becket surface, the light that LED chip is established thereon can be launched in a large number, reflectivity and the utilance of light have been improved, be arranged on the heat conduction copper layer on ceramic substrate, further improved the thermal conductivity of substrate.
[accompanying drawing explanation]
Fig. 1 is the schematic perspective view of embodiment;
Fig. 2 is the packaging technology flow chart of LED light-emitting device.
[embodiment]
The present invention is a kind of LED light-emitting device, and it includes:
Ceramic substrate 10, its top layer is plane;
Becket 20, is arranged on ceramic substrate 10 upper periphery;
LED chip 30;
Weldment 40;
Lens 50, are positioned at becket 20 tops;
Described ceramic substrate 10 forms and analyses and observe state for the cavity of " recessed " font with the becket of its upper periphery 20, and described LED chip 30 is arranged in the groove of this cavity, between described becket 20 and ceramic substrate 10, by welding manner, links together; On described ceramic substrate 10, set up heat conduction copper layer 60; At described lens 50 edges, be provided with one deck weldment 40, described weldment 40 links together with the mode that becket 20 welds by parallel soldering and sealing.
As seen from the above, compare the packaged type of traditional organic silica gel, the present invention adopts the mode of welding to carry out air-tight packaging, has improved life-span and the stability of LED light-emitting device, the present invention is provided with heat conduction copper layer 60 on ceramic substrate 10, has further improved the thermal conductivity of ceramic substrate 10; Because the reflectivity of metal is higher than ceramic reflectivity, the becket 20 that is therefore located at ceramic substrate 10 tops can reflect away the light being mapped to after LED chip electrified light emitting on it in a large number, has improved reflectivity and the utilance of light.
Optimize, in the present embodiment, described lens 50 are hood configuration, certainly, the shape of lens 50 should design suitable lens arrangement according to different use occasions, meets the requirement of various occasions to angle, intensity etc., can be the structures such as plane, sphere, aspheric surface.
Optimize, in the present embodiment, in described becket 20 surface electrical, be coated with the metal film that one deck has high reflectance, as aluminium or silver etc., further improved so again reflectivity and the utilance of light.
Optimize, in the present embodiment, described weldment 40 is expansion alloy or stainless steel material, at this, require this expansion alloy or stainless steel material and glass can realize matched seal or unmatched sealing, matched seal mainly refers to that the coefficient of expansion mates mutually with lens material, and as expansion alloys such as kovar alloy, invar alloy, stainless steel material must mate with the lens material coefficient of expansion.
Optimize, in the present embodiment, described becket 20 be can with the expansion alloy of ceramic hermetic seal.
A method for packing for LED light-emitting device, includes following steps:
(1) by soldering processes, becket 20 is welded on to the upper periphery of ceramic substrate 10, becket 20 and ceramic substrate 10 is formed and analyse and observe state for the cavity of " recessed " font;
(2) LED chip 30 is fixed in the groove of described cavity;
(3) by photoelectricity optical window encapsulation technology, weldment 40 is fixed on to the edge of lens 50;
(4) utilize the mode of parallel soldering and sealing that weldment 40 and becket 20 are linked together.
In the present embodiment, the technique of described soldering is:
(1) becket 20 and 10 two parts of ceramic substrate are deoiled, decontamination is cleaned and dry processing;
(2) in described becket 20 bottoms or the position of the corresponding beckets 20 of ceramic substrate 10 upper epidermis add solder layer;
(3) by becket 20 bottom contrapositions to the correspondence position of ceramic substrate 10 upper epidermis, in vacuum or have under the state of protective gas, carry out soldering processing, becket 20 is fixed on ceramic substrate 10.
In the present embodiment, the technique of the photoelectricity optical window sealing-in of described lens 50 and weldment 40 can realize by three kinds of different techniques at this:
One: directly by the molten envelope of lens 50 and weldment 40 combinations
A, first lens 50 and weldment 40 are deoiled, decontamination is cleaned and dry processing;
B, lens 50 and weldment 40 are carried out to contraposition assembling;
C, whole lens 50 are heated to molten condition, lens 50 are adhered on weldment 40;
D, destressing reprocessing is carried out in the junction of lens 50 and weldment 40.
Two, brazing metal is by lens 50 and weldment 40 sealing-ins
A, at weldment 40 or lens 50, need the region of welding to plate layer of metal solder layer in advance;
B, more pretreated lens 50 and weldment 40 are deoiled, decontamination is cleaned and dry processing, then lens 50 and weldment 40 is carried out to contraposition assembling;
C, whole lens 50 and weldment 40 are heated, make the brazing metal fusing of weldment 40 and lens 50 both weld parts, lens 50 are fixedly adhered on weldment 40;
D, destressing reprocessing is carried out in the junction of lens 50 and weldment 40.
Three, glass solder is by lens 50 and weldment 40 sealings by fusing
A, first lens 50 and weldment 40 are deoiled, decontamination is cleaned and dry processing;
B, weldment 40 is carried out to pre-oxidation treatment;
C, lens 50, glass solder and weldment 40 are assembled;
D, lens 50 and weldment 40 are heated, glass solder starts softening molten sintering, and weldment 40 is fixedly connected with lens 50;
F, the weldment 40 linking together and lens 50 are carried out to redox processing;
E, destressing reprocessing and metal surface protection are carried out in the junction of lens 50 and weldment 40 process.
In the present embodiment, described Parallel Seam Sealing Technology is:
(1) weldment 40 and 20 two parts of becket are deoiled, decontamination is cleaned and dry processing;
(2) becket 20 and weldment 40 are carried out to contraposition assembling;
(3) soldering tip is positioned with the place that weldment 40 is connected becket 20, use the weldering of continuous impulse seam, becket 20 and weldment 40 are fixed up.
Above embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit, although the present invention is had been described in detail with reference to previous embodiment, those of ordinary skill in the art is to be understood that, it is modified according to the technical scheme that can record aforementioned each embodiment, or its part technical characterictic is equal to replacement, and these modifications or replacement, do not make the essence of appropriate technical solution depart from spirit and the category of technical solution of the present invention.
Claims (10)
1. a LED light-emitting device, is characterized in that, it includes:
Ceramic substrate, its top layer is plane;
Becket, is arranged on ceramic substrate upper periphery;
LED chip;
Weldment;
Lens, are positioned at becket top;
Described ceramic substrate and the becket of its upper periphery form analyses and observe state for the cavity of " recessed " font, and described LED chip is arranged in the groove of this cavity, between described becket and ceramic substrate, by welding manner, links together; On described ceramic substrate, set up heat conduction copper layer; At described rims of the lens, be provided with one deck weldment, described weldment links together with the mode that becket welds by parallel soldering and sealing.
2. a kind of LED light-emitting device according to claim 1, is characterized in that, in described becket surface electrical, is coated with the metal film that one deck has high reflectance.
3. a kind of LED light-emitting device according to claim 1, is characterized in that, described weldment is expansion alloy or stainless steel material.
4. a kind of LED light-emitting device according to claim 1, is characterized in that, described becket be can with the expansion alloy of ceramic hermetic seal.
5. a method for packing for LED light-emitting device, is characterized in that, includes following steps:
(1) by soldering processes, becket is welded on to the upper periphery of ceramic substrate, becket and ceramic substrate is formed and analyse and observe state for the cavity of " recessed " font;
(2) LED chip is fixed in the groove of described cavity;
(3) by photoelectricity optical window encapsulation technology, weldment is fixed on to the edge of lens;
(4) utilize the mode of parallel soldering and sealing that weldment and becket are linked together.
6. the method for packing of a kind of LED light-emitting device according to claim 6, is characterized in that, the technique of described soldering is:
(1) becket and two parts of ceramic substrate are deoiled, decontamination is cleaned and dry processing;
(2) in the position of described becket bottom or the corresponding becket of ceramic substrate upper epidermis, add solder layer;
(3) correspondence position to ceramic substrate upper epidermis by the contraposition of becket bottom, in vacuum or have under the state of protective gas, carries out soldering processing, and becket is fixed on ceramic substrate.
7. the method for packing of a kind of LED light-emitting device according to claim 6, is characterized in that, described photoelectricity optical window encapsulation technology technique is:
A, first lens and weldment are deoiled, decontamination is cleaned and dry processing;
B, lens and weldment are carried out to contraposition assembling;
C, whole lens are heated to molten condition, make lens fixedly be adhered on weldment;
D, destressing reprocessing is carried out in the junction of lens and weldment.
8. the method for packing of a kind of LED light-emitting device according to claim 6, is characterized in that, described photoelectricity optical window encapsulation technology technique is:
A, the region that need to weld at weldment or lens in advance plate layer of metal solder layer;
B, more pretreated lens and weldment are deoiled, decontamination is cleaned and dry processing,
Then lens and weldment are carried out to contraposition assembling;
C, whole lens and weldment are heated, make the brazing metal fusing of weldment and lens weld part, lens are fixedly adhered on weldment;
D, destressing reprocessing is carried out in the junction of lens and weldment.
9. the method for packing of a kind of LED light-emitting device according to claim 6, is characterized in that, described photoelectricity optical window encapsulation technology technique is:
A, first lens and weldment are deoiled, decontamination is cleaned and dry processing;
B, weldment is carried out to pre-oxidation treatment;
C, lens, glass solder and weldment are assembled;
D, lens and weldment are heated, glass solder starts softening molten sintering, and weldment is fixedly connected with lens;
F, the weldment linking together and lens are carried out to redox processing;
E, destressing reprocessing and metal surface protection are carried out in the junction of lens and weldment process.
10. the method for packing of a kind of LED light-emitting device according to claim 6, is characterized in that, described Parallel Seam Sealing Technology is:
(1) weldment and two parts of becket are deoiled, decontamination is cleaned and dry processing;
(2) becket and weldment are carried out to contraposition assembling;
(3) place soldering tip being connected with weldment becket positions, and uses the weldering of continuous impulse seam, and becket and weldment are fixed up.
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CN105870308A (en) * | 2016-04-30 | 2016-08-17 | 浙江单色电子科技有限公司 | Inorganic encapsulation direct-plug type violet LED and manufacturing method thereof |
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CN106449542A (en) * | 2016-08-26 | 2017-02-22 | 深圳市五矿发光材料有限公司 | Package structure of semiconductor light-emitting chip with airtight window free of silica gel |
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CN110369904A (en) * | 2019-06-27 | 2019-10-25 | 天通(嘉兴)新材料有限公司 | A kind of sintering method of laser pipe cap |
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CN111906402A (en) * | 2020-07-08 | 2020-11-10 | 安徽工程大学 | Ceramic plate and metal cylinder part joint structure |
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