CN103972378A - LED light-emitting device and packaging method thereof - Google Patents

LED light-emitting device and packaging method thereof Download PDF

Info

Publication number
CN103972378A
CN103972378A CN201410231231.3A CN201410231231A CN103972378A CN 103972378 A CN103972378 A CN 103972378A CN 201410231231 A CN201410231231 A CN 201410231231A CN 103972378 A CN103972378 A CN 103972378A
Authority
CN
China
Prior art keywords
weldment
lens
becket
ceramic substrate
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410231231.3A
Other languages
Chinese (zh)
Inventor
赵延民
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zhongshan Bingyi Electronic Technology Co ltd
Original Assignee
Zhongshan Bingyi Electronic Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zhongshan Bingyi Electronic Technology Co ltd filed Critical Zhongshan Bingyi Electronic Technology Co ltd
Priority to CN201410231231.3A priority Critical patent/CN103972378A/en
Publication of CN103972378A publication Critical patent/CN103972378A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/641Heat extraction or cooling elements characterized by the materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0066Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Abstract

A method for packaging an LED light-emitting device is characterized by comprising the following steps: (1) welding the metal ring on the periphery above the ceramic substrate by a brazing process, so that the metal ring and the ceramic substrate form a cavity with a concave cross section; (2) fixing the LED chip in the groove of the cavity; (3) fixing the welding part at the edge of the lens by a photoelectric window sealing technology; (4) and connecting the welding part and the metal ring together by using a parallel seal welding mode. The invention aims to solve the problem that an ultraviolet LED device is not suitable for being packaged by using organic materials, and improve the stability and reliability of the LED light-emitting device; the problem of the chip can not bear the high temperature is solved, the local melting welding is realized by adopting parallel sealing welding, direct high-temperature heating is not needed, the thermal shock to the LED chip is reduced, the sealing process is more efficient and faster, the inorganic airtight sealing of devices is realized, and the stability and the reliability of related devices are ensured.

Description

A kind of LED light-emitting device and method for packing thereof
[technical field]
The present invention relates to a kind of light-emitting device of inorganic air-tight packaging, can be applicable to the high reliability encapsulation of LED, especially for the high reliability packaging of infrared, ultraviolet leds etc.
[background technology]
Along with the development of LED technology, the encapsulation wave band of LED is gradually toward near ultraviolet, deep ultraviolet future development, and power is also toward the development of high-power aspect.Yet adopt the encapsulation of traditional organic silica gel material, such as, direct insertion LED adopts epoxy encapsulation more, adopting surface mounted LED adopts silicones or silica gel packaging more, and this type of organosilicon material is under long-time service condition, because the impact of the factors such as water, light, heat was easily lost efficacy, cause the sharp-decay of the luminous flux, radiant flux etc. of device, even cause component failure.For high power LED integrated light source, due to a variety of causes, as situations such as chip heating, heat radiation deficiencies, cause device package glue surface temperature too high, packaging plastic lost efficacy gradually under light and hot acting in conjunction, and then caused component failure.
[summary of the invention]
One of technical problem to be solved by this invention is to provide a kind of LED light-emitting device, at solution uv-LED device, is not suitable for using on the basis of organic material encapsulation problem, adopts inorganic material to encapsulate, and improves stability and the reliability of LED light-emitting device.
Two of technical problem to be solved by this invention is to provide a kind of LED method for packing, solved the situation that LED chip can not bear high temperature, adopt parallel soldering and sealing to realize local melting welding, without direct high-temperature heating, reduced the thermal shock to LED chip, process for sealing is more efficient, quick, realizes the inorganic hermetic seal of device, guarantees stability and the reliability of related device.
The present invention is for addressing the above problem, following technical scheme of the present invention:
A LED light-emitting device, it includes:
Ceramic substrate, its top layer is plane;
Becket, is arranged on ceramic substrate upper periphery;
LED chip;
Weldment;
Lens, are positioned at becket top;
Described ceramic substrate and the becket of its upper periphery form analyses and observe state for the cavity of " recessed " font, and described LED chip is arranged in the groove of this cavity, between described becket and ceramic substrate, by welding manner, links together; On described ceramic substrate, set up heat conduction copper layer; At described rims of the lens, be provided with one deck weldment, described weldment links together with the mode that becket welds by parallel soldering and sealing.
In to the improvement project of above-mentioned a kind of LED light-emitting device, in described becket surface electrical, be coated with the metal film that one deck has high reflectance.
In to the improvement project of above-mentioned a kind of LED light-emitting device, described weldment is expansion alloy or stainless steel material.
In to the improvement project of above-mentioned a kind of LED light-emitting device, described becket be can with the expansion alloy of ceramic hermetic seal.
A method for packing for LED light-emitting device, includes following steps:
(1) by soldering processes, becket is welded on to the upper periphery of ceramic substrate, becket and ceramic substrate is formed and analyse and observe state for the cavity of " recessed " font;
(2) LED chip is fixed in the groove of described cavity;
(3) by photoelectricity optical window encapsulation technology, weldment is fixed on to the edge of lens;
(4) utilize the mode of parallel soldering and sealing that weldment and becket are linked together.
In to the improvement project of a kind of above-mentioned LED light emitting device package method, the technique of described soldering is:
(1) becket and two parts of ceramic substrate are deoiled, decontamination is cleaned and dry processing;
(2) in the position of described becket bottom or the corresponding becket of ceramic substrate upper epidermis, add solder layer;
(3) correspondence position to ceramic substrate upper epidermis by the contraposition of becket bottom, in vacuum or have under the state of protective gas, carries out soldering processing, and becket is fixed on ceramic substrate.
In to the improvement project of a kind of above-mentioned LED light emitting device package method, described photoelectricity optical window encapsulation technology technique is:
A, first lens and weldment are deoiled, decontamination is cleaned and dry processing;
B, lens and weldment are carried out to contraposition assembling;
C, whole lens are heated to molten condition, make lens fixedly be adhered on weldment;
D, destressing reprocessing is carried out in the junction of lens and weldment.
In to the improvement project of a kind of above-mentioned LED light emitting device package method, described photoelectricity optical window encapsulation technology technique is:
A, the region that need to weld at weldment or lens in advance plate layer of metal solder layer;
B, more pretreated lens and weldment are deoiled, decontamination is cleaned and dry processing,
Then lens and weldment are carried out to contraposition assembling;
C, whole lens and weldment are heated, make the brazing metal fusing of weldment and lens weld part, lens are fixedly adhered on weldment;
D, destressing reprocessing is carried out in the junction of lens and weldment.
In to the improvement project of a kind of above-mentioned LED light emitting device package method, described photoelectricity optical window encapsulation technology technique is:
A, first lens and weldment are deoiled, decontamination is cleaned and dry processing;
B, weldment is carried out to pre-oxidation treatment;
C, lens, glass solder and weldment are assembled;
D, lens and weldment are heated, glass solder starts softening molten sintering, and weldment is fixedly connected with lens;
F, the weldment linking together and lens are carried out to redox processing;
E, destressing reprocessing and metal surface protection are carried out in the junction of lens and weldment process.
In to the improvement project of a kind of above-mentioned LED light emitting device package method, described Parallel Seam Sealing Technology is:
(1) weldment and two parts of becket are deoiled, decontamination is cleaned and dry processing;
(2) becket and weldment are carried out to contraposition assembling;
(3) place soldering tip being connected with weldment becket positions, and uses the weldering of continuous impulse seam, and becket and weldment are fixed up.
Owing to having adopted technique scheme, compare the packaged type of traditional organic silica gel, the present invention adopts the mode of welding to encapsulate, life-span and the stability of LED light-emitting device have been improved, significantly be reduced in the thermal shock in level Hermetic Package process, LED chip being caused, because ceramic substrate adopts planar structure, technology difficulty and the cost of Substrate manufacture have significantly been reduced, be plated in the high reflected coat layer on becket surface, the light that LED chip is established thereon can be launched in a large number, reflectivity and the utilance of light have been improved, be arranged on the heat conduction copper layer on ceramic substrate, further improved the thermal conductivity of substrate.
[accompanying drawing explanation]
Fig. 1 is the schematic perspective view of embodiment;
Fig. 2 is the packaging technology flow chart of LED light-emitting device.
[embodiment]
The present invention is a kind of LED light-emitting device, and it includes:
Ceramic substrate 10, its top layer is plane;
Becket 20, is arranged on ceramic substrate 10 upper periphery;
LED chip 30;
Weldment 40;
Lens 50, are positioned at becket 20 tops;
Described ceramic substrate 10 forms and analyses and observe state for the cavity of " recessed " font with the becket of its upper periphery 20, and described LED chip 30 is arranged in the groove of this cavity, between described becket 20 and ceramic substrate 10, by welding manner, links together; On described ceramic substrate 10, set up heat conduction copper layer 60; At described lens 50 edges, be provided with one deck weldment 40, described weldment 40 links together with the mode that becket 20 welds by parallel soldering and sealing.
As seen from the above, compare the packaged type of traditional organic silica gel, the present invention adopts the mode of welding to carry out air-tight packaging, has improved life-span and the stability of LED light-emitting device, the present invention is provided with heat conduction copper layer 60 on ceramic substrate 10, has further improved the thermal conductivity of ceramic substrate 10; Because the reflectivity of metal is higher than ceramic reflectivity, the becket 20 that is therefore located at ceramic substrate 10 tops can reflect away the light being mapped to after LED chip electrified light emitting on it in a large number, has improved reflectivity and the utilance of light.
Optimize, in the present embodiment, described lens 50 are hood configuration, certainly, the shape of lens 50 should design suitable lens arrangement according to different use occasions, meets the requirement of various occasions to angle, intensity etc., can be the structures such as plane, sphere, aspheric surface.
Optimize, in the present embodiment, in described becket 20 surface electrical, be coated with the metal film that one deck has high reflectance, as aluminium or silver etc., further improved so again reflectivity and the utilance of light.
Optimize, in the present embodiment, described weldment 40 is expansion alloy or stainless steel material, at this, require this expansion alloy or stainless steel material and glass can realize matched seal or unmatched sealing, matched seal mainly refers to that the coefficient of expansion mates mutually with lens material, and as expansion alloys such as kovar alloy, invar alloy, stainless steel material must mate with the lens material coefficient of expansion.
Optimize, in the present embodiment, described becket 20 be can with the expansion alloy of ceramic hermetic seal.
A method for packing for LED light-emitting device, includes following steps:
(1) by soldering processes, becket 20 is welded on to the upper periphery of ceramic substrate 10, becket 20 and ceramic substrate 10 is formed and analyse and observe state for the cavity of " recessed " font;
(2) LED chip 30 is fixed in the groove of described cavity;
(3) by photoelectricity optical window encapsulation technology, weldment 40 is fixed on to the edge of lens 50;
(4) utilize the mode of parallel soldering and sealing that weldment 40 and becket 20 are linked together.
In the present embodiment, the technique of described soldering is:
(1) becket 20 and 10 two parts of ceramic substrate are deoiled, decontamination is cleaned and dry processing;
(2) in described becket 20 bottoms or the position of the corresponding beckets 20 of ceramic substrate 10 upper epidermis add solder layer;
(3) by becket 20 bottom contrapositions to the correspondence position of ceramic substrate 10 upper epidermis, in vacuum or have under the state of protective gas, carry out soldering processing, becket 20 is fixed on ceramic substrate 10.
In the present embodiment, the technique of the photoelectricity optical window sealing-in of described lens 50 and weldment 40 can realize by three kinds of different techniques at this:
One: directly by the molten envelope of lens 50 and weldment 40 combinations
A, first lens 50 and weldment 40 are deoiled, decontamination is cleaned and dry processing;
B, lens 50 and weldment 40 are carried out to contraposition assembling;
C, whole lens 50 are heated to molten condition, lens 50 are adhered on weldment 40;
D, destressing reprocessing is carried out in the junction of lens 50 and weldment 40.
Two, brazing metal is by lens 50 and weldment 40 sealing-ins
A, at weldment 40 or lens 50, need the region of welding to plate layer of metal solder layer in advance;
B, more pretreated lens 50 and weldment 40 are deoiled, decontamination is cleaned and dry processing, then lens 50 and weldment 40 is carried out to contraposition assembling;
C, whole lens 50 and weldment 40 are heated, make the brazing metal fusing of weldment 40 and lens 50 both weld parts, lens 50 are fixedly adhered on weldment 40;
D, destressing reprocessing is carried out in the junction of lens 50 and weldment 40.
Three, glass solder is by lens 50 and weldment 40 sealings by fusing
A, first lens 50 and weldment 40 are deoiled, decontamination is cleaned and dry processing;
B, weldment 40 is carried out to pre-oxidation treatment;
C, lens 50, glass solder and weldment 40 are assembled;
D, lens 50 and weldment 40 are heated, glass solder starts softening molten sintering, and weldment 40 is fixedly connected with lens 50;
F, the weldment 40 linking together and lens 50 are carried out to redox processing;
E, destressing reprocessing and metal surface protection are carried out in the junction of lens 50 and weldment 40 process.
In the present embodiment, described Parallel Seam Sealing Technology is:
(1) weldment 40 and 20 two parts of becket are deoiled, decontamination is cleaned and dry processing;
(2) becket 20 and weldment 40 are carried out to contraposition assembling;
(3) soldering tip is positioned with the place that weldment 40 is connected becket 20, use the weldering of continuous impulse seam, becket 20 and weldment 40 are fixed up.
Above embodiment is only in order to illustrate technical scheme of the present invention, be not intended to limit, although the present invention is had been described in detail with reference to previous embodiment, those of ordinary skill in the art is to be understood that, it is modified according to the technical scheme that can record aforementioned each embodiment, or its part technical characterictic is equal to replacement, and these modifications or replacement, do not make the essence of appropriate technical solution depart from spirit and the category of technical solution of the present invention.

Claims (10)

1. a LED light-emitting device, is characterized in that, it includes:
Ceramic substrate, its top layer is plane;
Becket, is arranged on ceramic substrate upper periphery;
LED chip;
Weldment;
Lens, are positioned at becket top;
Described ceramic substrate and the becket of its upper periphery form analyses and observe state for the cavity of " recessed " font, and described LED chip is arranged in the groove of this cavity, between described becket and ceramic substrate, by welding manner, links together; On described ceramic substrate, set up heat conduction copper layer; At described rims of the lens, be provided with one deck weldment, described weldment links together with the mode that becket welds by parallel soldering and sealing.
2. a kind of LED light-emitting device according to claim 1, is characterized in that, in described becket surface electrical, is coated with the metal film that one deck has high reflectance.
3. a kind of LED light-emitting device according to claim 1, is characterized in that, described weldment is expansion alloy or stainless steel material.
4. a kind of LED light-emitting device according to claim 1, is characterized in that, described becket be can with the expansion alloy of ceramic hermetic seal.
5. a method for packing for LED light-emitting device, is characterized in that, includes following steps:
(1) by soldering processes, becket is welded on to the upper periphery of ceramic substrate, becket and ceramic substrate is formed and analyse and observe state for the cavity of " recessed " font;
(2) LED chip is fixed in the groove of described cavity;
(3) by photoelectricity optical window encapsulation technology, weldment is fixed on to the edge of lens;
(4) utilize the mode of parallel soldering and sealing that weldment and becket are linked together.
6. the method for packing of a kind of LED light-emitting device according to claim 6, is characterized in that, the technique of described soldering is:
(1) becket and two parts of ceramic substrate are deoiled, decontamination is cleaned and dry processing;
(2) in the position of described becket bottom or the corresponding becket of ceramic substrate upper epidermis, add solder layer;
(3) correspondence position to ceramic substrate upper epidermis by the contraposition of becket bottom, in vacuum or have under the state of protective gas, carries out soldering processing, and becket is fixed on ceramic substrate.
7. the method for packing of a kind of LED light-emitting device according to claim 6, is characterized in that, described photoelectricity optical window encapsulation technology technique is:
A, first lens and weldment are deoiled, decontamination is cleaned and dry processing;
B, lens and weldment are carried out to contraposition assembling;
C, whole lens are heated to molten condition, make lens fixedly be adhered on weldment;
D, destressing reprocessing is carried out in the junction of lens and weldment.
8. the method for packing of a kind of LED light-emitting device according to claim 6, is characterized in that, described photoelectricity optical window encapsulation technology technique is:
A, the region that need to weld at weldment or lens in advance plate layer of metal solder layer;
B, more pretreated lens and weldment are deoiled, decontamination is cleaned and dry processing,
Then lens and weldment are carried out to contraposition assembling;
C, whole lens and weldment are heated, make the brazing metal fusing of weldment and lens weld part, lens are fixedly adhered on weldment;
D, destressing reprocessing is carried out in the junction of lens and weldment.
9. the method for packing of a kind of LED light-emitting device according to claim 6, is characterized in that, described photoelectricity optical window encapsulation technology technique is:
A, first lens and weldment are deoiled, decontamination is cleaned and dry processing;
B, weldment is carried out to pre-oxidation treatment;
C, lens, glass solder and weldment are assembled;
D, lens and weldment are heated, glass solder starts softening molten sintering, and weldment is fixedly connected with lens;
F, the weldment linking together and lens are carried out to redox processing;
E, destressing reprocessing and metal surface protection are carried out in the junction of lens and weldment process.
10. the method for packing of a kind of LED light-emitting device according to claim 6, is characterized in that, described Parallel Seam Sealing Technology is:
(1) weldment and two parts of becket are deoiled, decontamination is cleaned and dry processing;
(2) becket and weldment are carried out to contraposition assembling;
(3) place soldering tip being connected with weldment becket positions, and uses the weldering of continuous impulse seam, and becket and weldment are fixed up.
CN201410231231.3A 2014-05-29 2014-05-29 LED light-emitting device and packaging method thereof Pending CN103972378A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410231231.3A CN103972378A (en) 2014-05-29 2014-05-29 LED light-emitting device and packaging method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410231231.3A CN103972378A (en) 2014-05-29 2014-05-29 LED light-emitting device and packaging method thereof

Publications (1)

Publication Number Publication Date
CN103972378A true CN103972378A (en) 2014-08-06

Family

ID=51241653

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410231231.3A Pending CN103972378A (en) 2014-05-29 2014-05-29 LED light-emitting device and packaging method thereof

Country Status (1)

Country Link
CN (1) CN103972378A (en)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104733589A (en) * 2015-03-09 2015-06-24 潮州三环(集团)股份有限公司 Preparation method for LED packaging cover plate
CN105689833A (en) * 2016-03-24 2016-06-22 株洲天微技术有限公司 Brazing sealing covering method and structure for shell and cover plate of microcircuit module
CN105870308A (en) * 2016-04-30 2016-08-17 浙江单色电子科技有限公司 Inorganic encapsulation direct-plug type violet LED and manufacturing method thereof
CN105870294A (en) * 2016-05-05 2016-08-17 上海国熠光电科技有限公司 Packaging method and structure of high-power LED
CN106449542A (en) * 2016-08-26 2017-02-22 深圳市五矿发光材料有限公司 Package structure of semiconductor light-emitting chip with airtight window free of silica gel
CN106601889A (en) * 2016-05-17 2017-04-26 陈秋胜 Window-airtight silica gel free packaging structure of semiconductor light emitting chip
CN106684227A (en) * 2016-12-30 2017-05-17 江苏稳润光电有限公司 Ultraviolet LED package method
CN106932879A (en) * 2015-11-12 2017-07-07 日月光半导体制造股份有限公司 Optical device packaging and its manufacture method
CN107301977A (en) * 2017-06-19 2017-10-27 惠州市鸿业新型材料有限公司 A kind of optical window structure making process of metal and crystal air-tight packaging
CN108922869A (en) * 2018-07-13 2018-11-30 广东格斯泰气密元件有限公司 A kind of SMD encapsulation base of band TEC- aluminium nitride-metal ternary structural
CN109509825A (en) * 2018-12-13 2019-03-22 佛山市国星光电股份有限公司 LED component and lamp group array
CN109509824A (en) * 2018-12-13 2019-03-22 佛山市国星光电股份有限公司 LED component and lamp group array
CN110310947A (en) * 2019-07-15 2019-10-08 华引芯(武汉)科技有限公司 A kind of UV LED full-inorganic encapsulating structure with prompt facility
CN110369904A (en) * 2019-06-27 2019-10-25 天通(嘉兴)新材料有限公司 A kind of sintering method of laser pipe cap
CN111162154A (en) * 2020-03-05 2020-05-15 华引芯(武汉)科技有限公司 Ultraviolet light-emitting element and all-inorganic packaging method
CN111906402A (en) * 2020-07-08 2020-11-10 安徽工程大学 Ceramic plate and metal cylinder part joint structure
CN114823942A (en) * 2022-07-01 2022-07-29 广东中科半导体微纳制造技术研究院 Semiconductor packaging structure and packaging method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201112414Y (en) * 2007-09-21 2008-09-10 万喜红 High power LED package structure
US20100207140A1 (en) * 2009-02-19 2010-08-19 Koninklijke Philips Electronics N.V. Compact molded led module
CN103137833A (en) * 2013-03-15 2013-06-05 深圳市瑞丰光电子股份有限公司 Method and structure of light emitting diode (LED) packaging
CN103682047A (en) * 2013-12-23 2014-03-26 中山市秉一电子科技有限公司 Cover plate for inorganic packaging of LED

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201112414Y (en) * 2007-09-21 2008-09-10 万喜红 High power LED package structure
US20100207140A1 (en) * 2009-02-19 2010-08-19 Koninklijke Philips Electronics N.V. Compact molded led module
CN103137833A (en) * 2013-03-15 2013-06-05 深圳市瑞丰光电子股份有限公司 Method and structure of light emitting diode (LED) packaging
CN103682047A (en) * 2013-12-23 2014-03-26 中山市秉一电子科技有限公司 Cover plate for inorganic packaging of LED

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104733589A (en) * 2015-03-09 2015-06-24 潮州三环(集团)股份有限公司 Preparation method for LED packaging cover plate
CN104733589B (en) * 2015-03-09 2017-09-29 潮州三环(集团)股份有限公司 A kind of preparation method of LED encapsulation cover plates
US10862014B2 (en) 2015-11-12 2020-12-08 Advanced Semiconductor Engineering, Inc. Optical device package and method of manufacturing the same
CN106932879A (en) * 2015-11-12 2017-07-07 日月光半导体制造股份有限公司 Optical device packaging and its manufacture method
CN105689833A (en) * 2016-03-24 2016-06-22 株洲天微技术有限公司 Brazing sealing covering method and structure for shell and cover plate of microcircuit module
CN105689833B (en) * 2016-03-24 2018-02-23 株洲天微技术有限公司 A kind of the sealed with brazing capping method and structure of microcircuit module housing and cover plate
CN105870308A (en) * 2016-04-30 2016-08-17 浙江单色电子科技有限公司 Inorganic encapsulation direct-plug type violet LED and manufacturing method thereof
CN105870308B (en) * 2016-04-30 2019-11-05 浙江单色电子科技有限公司 A kind of direct insertion purple LED of inorganic encapsulated and its manufacturing method
CN105870294A (en) * 2016-05-05 2016-08-17 上海国熠光电科技有限公司 Packaging method and structure of high-power LED
CN105870294B (en) * 2016-05-05 2019-03-29 上海国熠光电科技有限公司 A kind of encapsulating method and structure of high-capacity LED
CN106601889A (en) * 2016-05-17 2017-04-26 陈秋胜 Window-airtight silica gel free packaging structure of semiconductor light emitting chip
CN106449542A (en) * 2016-08-26 2017-02-22 深圳市五矿发光材料有限公司 Package structure of semiconductor light-emitting chip with airtight window free of silica gel
CN106449542B (en) * 2016-08-26 2019-08-23 深圳市五矿发光材料有限公司 A kind of encapsulating structure of the semiconductor luminous chip of the airtight no silica gel of form
CN106684227A (en) * 2016-12-30 2017-05-17 江苏稳润光电有限公司 Ultraviolet LED package method
CN107301977A (en) * 2017-06-19 2017-10-27 惠州市鸿业新型材料有限公司 A kind of optical window structure making process of metal and crystal air-tight packaging
CN108922869A (en) * 2018-07-13 2018-11-30 广东格斯泰气密元件有限公司 A kind of SMD encapsulation base of band TEC- aluminium nitride-metal ternary structural
CN109509824A (en) * 2018-12-13 2019-03-22 佛山市国星光电股份有限公司 LED component and lamp group array
CN109509825A (en) * 2018-12-13 2019-03-22 佛山市国星光电股份有限公司 LED component and lamp group array
CN110369904A (en) * 2019-06-27 2019-10-25 天通(嘉兴)新材料有限公司 A kind of sintering method of laser pipe cap
CN110310947A (en) * 2019-07-15 2019-10-08 华引芯(武汉)科技有限公司 A kind of UV LED full-inorganic encapsulating structure with prompt facility
CN110310947B (en) * 2019-07-15 2021-05-25 华引芯(武汉)科技有限公司 UV LED all-inorganic packaging structure with prompt function
CN111162154A (en) * 2020-03-05 2020-05-15 华引芯(武汉)科技有限公司 Ultraviolet light-emitting element and all-inorganic packaging method
CN111162154B (en) * 2020-03-05 2020-12-04 华引芯(武汉)科技有限公司 Ultraviolet light-emitting element and all-inorganic packaging method
CN111906402A (en) * 2020-07-08 2020-11-10 安徽工程大学 Ceramic plate and metal cylinder part joint structure
CN111906402B (en) * 2020-07-08 2021-08-17 安徽工程大学 Ceramic plate and metal cylinder part joint structure
CN114823942A (en) * 2022-07-01 2022-07-29 广东中科半导体微纳制造技术研究院 Semiconductor packaging structure and packaging method

Similar Documents

Publication Publication Date Title
CN103972378A (en) LED light-emitting device and packaging method thereof
CN102403466B (en) Laser bonding method for packaging of photoelectric device
TWI619268B (en) Package structure of ultraviolet light emitting diode
CN203771136U (en) All-angle reflection U-shaped LED bulb with luminescent filaments
US20130126938A1 (en) Optoelectronic Semiconductor Element and Associated Method of Production by Direct Welding of Glass Housing Components by Means of Ultra Short Pulsed Laser without Glass Solder
CN205808563U (en) The Vacuum Package assembly of non-refrigerated infrared detector
CN201112414Y (en) High power LED package structure
CN204130585U (en) A kind of uv-LED device
CN104037316B (en) A kind of LED inorganic encapsulateds support and its method for packing
CN204144238U (en) The package assembling of high power semiconductor chip
CN205319182U (en) Ultraviolet LED device
CN105428472A (en) Manufacturing method for ultraviolet LED device
CN204026264U (en) High thermally conductive LED 360 ° of light-emitting filament bulbs
CN103137833A (en) Method and structure of light emitting diode (LED) packaging
CN203895492U (en) LED discrete part device support rack
JP5500927B2 (en) Method for manufacturing light emitting device
CN105280783A (en) An ultraviolet led device
CN105529390A (en) Inorganic-packaged self-focusing integrated UVLED module
CN203910858U (en) Fully-inorganic surface-mount LED packaging structure
US10834809B2 (en) Optoelectronic assembly, and method for producing an optoelectronic assembly
TWI528596B (en) Led package and method of manufacturing the same
TWM486508U (en) Heating unit and vacuum welding machine including the same
CN110707199A (en) Deep ultraviolet LED device and packaging method thereof
CN111244250A (en) Ultraviolet LED lamp bead, packaging sleeve and packaging method
US20070000600A1 (en) Seal of fluid port

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20140806