CN103972012A - Reaction chamber and plasma equipment with same - Google Patents
Reaction chamber and plasma equipment with same Download PDFInfo
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- CN103972012A CN103972012A CN201310029533.8A CN201310029533A CN103972012A CN 103972012 A CN103972012 A CN 103972012A CN 201310029533 A CN201310029533 A CN 201310029533A CN 103972012 A CN103972012 A CN 103972012A
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- reaction chamber
- annular element
- clamping plate
- induction annular
- plasma
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Abstract
The invention discloses a reaction chamber and plasma equipment with the same. The reaction chamber comprises a chamber body and an induction ring part. A main reaction chamber body is formed in the chamber body. The induction ring part is arranged in the main reaction chamber body and used for weakening the magnetic field intensity in the center of the main reaction chamber body and reinforcing the magnetic field intensity on the outer periphery of the main reaction chamber body. According to the reaction chamber, the induction ring part is arranged in the reaction chamber and can reduce the plasma density in the center of the main reaction chamber body and increase the plasma density on the edge of the main reaction chamber body by changing the magnetic field intensity in the main reaction chamber body, and therefore the difference between the plasma density on the edge of the main reaction chamber body and the plasma density in the center of the main reaction chamber body can be reduced, the uniformity of plasma distribution can be improved, and development of wafers or work-piece products is easy.
Description
Technical field
The present invention relates to semiconductor processing technology field, particularly a kind of reaction chamber and there is its plasma apparatus.
Background technology
In PVD process equipment, particularly for IC(integrated circuit), TSV(silicon perforation), Packaging(encapsulation) manufacturing process, conventionally in reaction chamber, pass into process gas, produce plasma and carry out PROCESS FOR TREATMENT, for example, in the prerinse technique of carrying out in prerinse (Preclean) reaction chamber of the part as PVD technique, its objective is for before depositing metallic films, remove the pollutant of crystal column surface or the residue of groove and perforated bottom.Prerinse technique can obviously promote next adhesive force, the electric property of improving chip and the reliability of step institute deposited film.Next step after prerinse completes carrys out depositing metallic films by sputter exactly.General prerinse technique, is by gas, as Ar(argon gas), He(helium) etc., excite as plasma, utilize chemical reaction and the physical bombardment effect of plasma, wafer or workpiece are carried out to the processing of decontamination.
In general prerinse technique, adopt inert gas Ar to carry out PROCESS FOR TREATMENT more.But because Ar is activated into after plasma, the collision of the positive and negative particle of its plasma slab is compound more difficult, and at chamber wall place, the electric charge of positive corpusc(u)le or negative particle can be compound with wall, cause the ion concentration of plasma central area higher than edge, thereby cause process uniformity poor; Even by regulating the parameters such as radio-frequency power, air pressure, obtain to meet inhomogeneity process window also very narrow, be unfavorable for the exploitation of kinds of processes.
Summary of the invention
The present invention is intended at least solve one of technical problem existing in prior art.
In view of this, the present invention need to provide a kind of reaction chamber, and the plasma in this reaction chamber is evenly distributed, and has wider process window.Further, the present invention need to provide a kind of plasma reaction device with above-mentioned reaction chamber.
According to a first aspect of the invention, provide a kind of reaction chamber, having comprised: cavity, has had reaction chamber in described cavity; Induction annular element, described induction annular element is located in reaction chamber, for weakening the magnetic field intensity of described reaction chamber center and strengthening the magnetic field intensity at described reaction chamber outer peripheral edges place.
Reaction chamber according to an embodiment of the invention, in reaction chamber, there is induction annular element, induction annular element can reduce reaction chamber center plasma density by the magnetic field intensity changing in reaction chamber, increase the plasma density at reaction chamber edge, thereby reduce reaction chamber margin and center region plasma density difference, improve the uniformity that plasma distributes, thereby effectively improve the effect of wafer or workpiece prerinse PROCESS FOR TREATMENT, improve technique applicability, be conducive to the exploitation of wafer or workpiece product.
According to one embodiment of present invention, described induction annular element is arranged on the center of described reaction chamber and is positioned at the top of described reaction chamber.
According to one embodiment of present invention, described induction annular element is arranged on the roof of described reaction chamber.
According to one embodiment of present invention, described induction annular element is arranged on the roof of described reaction chamber by mount pad.
According to one embodiment of present invention, described mount pad comprises: the first clamping plate and the second clamping plate, described the first clamping plate have the first curved portions and the first flat part, described the second clamping plate have the second curved portions and the second flat part, and described the second flat part is relative to described the first curved portions with corresponding and described the second curved portions of described the first flat part to be formed for clamping the clamping hole of described induction annular element.
According to one embodiment of present invention, described mount pad is by through on the roof that is bolted to described reaction chamber of described the first and second flat parts.
According to one embodiment of present invention, described mount pad comprises: the first clamping plate, and described the first clamping plate are inverted L-shaped, the surface of the vertical limb of described the first clamping plate is provided with the first groove; With the second clamping plate, described the second clamping plate are that flat board is provided with the second groove, described the second clamping plate be fixed on described the first clamping plate and described the second groove relative to described the first groove to be formed for clamping the clamping hole of described induction annular element.
According to one embodiment of present invention, described mount pad is by running through on the roof that is bolted to described reaction chamber of horizontal limb of described the first clamping plate.
According to one embodiment of present invention, described the first and second grooves are multiple and corresponding to form multiple described clamping holes one by one each other.
According to one embodiment of present invention, described induction annular element be multiple and along the vertical direction compartment of terrain be located in described reaction chamber.
According to one embodiment of present invention, described induction annular element is tubular.
According to one embodiment of present invention, described induction annular element is circular rings or positive shape changeable ring.
According to one embodiment of present invention, described induction annular element is passive metal ring.
According to one embodiment of present invention, described induction annular element is solenoid.
According to one embodiment of present invention, described helix tube is multiturn.
According to a second aspect of the invention, provide a kind of plasma apparatus, it is characterized in that, having comprised: reaction chamber, described reaction chamber is the basis reaction chamber of embodiment above; And coil, be located on the periphery wall of described reaction chamber described coil encircling.
According to one embodiment of present invention, described plasma apparatus is vapor deposition apparatus, plasma etching equipment or apparatus for plasma chemical vapor deposition.
According to one embodiment of present invention, described reaction chamber is pre-cleaning cavity.
Additional aspect of the present invention and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present invention.
Brief description of the drawings
Above-mentioned and/or additional aspect of the present invention and advantage accompanying drawing below combination is understood becoming the description of embodiment obviously and easily, wherein:
Fig. 1 has shown the structural representation of reaction chamber according to an embodiment of the invention;
Fig. 2 has shown the horizontal cross-sectional schematic of reaction chamber according to an embodiment of the invention;
Fig. 3 has shown the magnetic direction schematic diagram in the reaction chamber of reaction chamber according to an embodiment of the invention;
Fig. 4 has shown the structural representation of the mount pad of reaction chamber according to an embodiment of the invention; With
Fig. 5 has shown the structural representation of the mount pad of reaction chamber according to another embodiment of the invention.
Embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Be exemplary below by the embodiment being described with reference to the drawings, only for explaining the present invention, and can not be interpreted as limitation of the present invention.
In description of the invention, it will be appreciated that, term " " center ", " longitudinally ", " laterally ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", orientation or the position relationship of instructions such as " outward " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, instead of device or the element of instruction or hint indication must have specific orientation, with specific orientation structure and operation, therefore can not be interpreted as limitation of the present invention.In addition, term " first ", " second " be only for describing object, and can not be interpreted as instruction or hint relative importance.
In description of the invention, it should be noted that, unless otherwise clearly defined and limited, term " installation ", " being connected ", " connection " should be interpreted broadly, and for example, can be to be fixedly connected with, and can be also to removably connect, or connect integratedly; Can be mechanical connection, can be also electrical connection; Can be to be directly connected, also can indirectly be connected by intermediary, can be the connection of two element internals.For the ordinary skill in the art, can concrete condition understand above-mentioned term concrete meaning in the present invention.
Below with reference to Fig. 1, reaction chamber is according to an embodiment of the invention described.
Be understandable that, can be used as prerinse reaction chamber according to the reaction chamber of the embodiment of the present invention, but be not limited to this.As shown in Figure 1, reaction chamber according to an embodiment of the invention, comprising: cavity 10 and induction annular element 20.
Particularly, cavity 10 is interior can have reaction chamber 101.Reaction chamber 101 is interior can pass into plasma, for example, can pass into Ar.
Induction annular element 20 can be located in reaction chamber 101, arrives the magnetic field intensity within the scope of reaction chamber 101 sidewalls for weakening the magnetic field intensity of reaction chamber 101 centers and strengthening induction annular element 20 outsides.
Reaction chamber according to an embodiment of the invention, in reaction chamber, there is induction annular element 20, induction annular element 20 can reduce reaction chamber 101 center plasma densitys by the magnetic field intensity changing in reaction chamber 101, increase induction annular element 20 outsides and arrive the magnetic field intensity within the scope of reaction chamber 101 sidewalls, the plasma density of corresponding raising within the scope of this, thereby reduce reaction chamber 101 margin and center region plasma density differences, improve the uniformity that plasma distributes, thereby effectively improve the effect of wafer or workpiece prerinse PROCESS FOR TREATMENT, expand the applicability of prerinse technique.
It should be noted that, in the time that the electric current in certain coil changes, in another coil closing on, produce induced electromotive force, be called mutual inductance phenomenon.In mutual inductance phenomenon, certain coil changes, and another coil can hinder it to be changed, thereby produces the induced current reverse with changing coil.Induction is same as induction in physics.So induce reverse electric current, the electromagnetic field of coil 30 on annular element 20 meeting generations and reaction chamber in this patent.And induction annular element 20 in use may, by Ar sputter, still be not enough to affect process results.
Alternatively, induction annular element 20 can for multiple and along the vertical direction compartment of terrain be located in reaction chamber 101.Thus, can improve reverse electric current, the electromagnetic field of coil 30 on the 20 meeting generations of induction annular element and reaction chamber.
As Figure 1-3, reaction chamber according to an embodiment of the invention, induction annular element 20 can be arranged on the center of reaction chamber 101 and be positioned at the top of reaction chamber 101.Thus, induction annular element 20 is located at the top of the center of reaction chamber 101, as shown in Figure 3, in the time that coil 30 applies power, induction annular element 20 can be induced to produce the electromagnetic field B ' (as shown in Figure 3) of an electromagnetic field B opposite direction producing with coil 30, like this, arrive chamber center in induction annular element 20 inner sides, the opposite direction of the electromagnetic field B that the direction of electromagnetic field B ' and coil 30 produce, has weakened the electromagnetic field at center, to reduce center plasma density; Meanwhile, by induction annular element 20 outsides within the scope of chamber sidewall, magnetic field B ' direction of the electromagnetic field B that produces with coil 30 with direction is identical, increased this region internal magnetic field intensity, the plasma density in this region of corresponding raising.
Alternatively, install for convenient, induction annular element 20 can be arranged on the roof of reaction chamber 101.And induction annular element 20 can be arranged on the roof of reaction chamber 101 by mount pad 40.Thus, can conveniently install induction annular element 20.
As shown in Figure 4, according to one embodiment of present invention, mount pad 40 can comprise: the first clamping plate 41 and the second clamping plate 42, the first clamping plate 41 have the first curved portions 411 and the first flat part 412, the second clamping plate 42 have the second curved portions 421 and the second flat part 422, the second flat parts 422 are corresponding with the first flat part 412 and the second curved portions 421 is relative to the first curved portions 411 to be formed for the clamping hole 43 of clamping induction annular element 20.Thus, this mount pad 40 is simple in structure, convenient to inducing annular element 20 to position.
Further, mount pad 40 can be by being fixed on the roof 1011 of reaction chamber 101 through the bolt 44 of the first flat part 412 and the second flat part 422.Thus, can facilitate being connected of mount pad 40 and reaction chamber 101.
As shown in Figure 5, according to another embodiment of the invention, mount pad 40 comprises: the first clamping plate 48 and the second clamping plate 49.
Particularly, the first clamping plate 48 can be inverted L-shaped, and the surface of the vertical limb of the first clamping plate 48 is provided with the first groove 481.
The second clamping plate 49 for dull and stereotyped and be provided with the second groove 491, the second clamping plate 49 be fixed on the first clamping plate 48 and the second groove 491 relative to the first groove 481 to be formed for clamping the clamping hole 43 of inducing annular element 20.Thus, this mount pad 40 is simple in structure, convenient to inducing annular element 20 to position.
Further, mount pad 40 is by running through on the roof that is bolted to reaction chamber 101 1011 of horizontal limb of the first clamping plate 48.Thus, can facilitate being connected of mount pad 40 and reaction chamber 101.
Alternatively, the first groove 481 and the second groove 491 can be multiple and corresponding to form multiple clamping holes 43 one by one each other.Thus, can multiple induction annular elements 20 be set multiple clamping holes 43 are interior.
Be understandable that, the shape of induction annular element 20 is not done particular restriction, is all the scope of protection of the invention as long as it can be conducive to enforcement of the present invention, and for example, induction annular element 20 can be tubular, circular rings or positive shape changeable ring.
It should be noted that, induction annular element 20 can be passive metal ring.Induction annular element 20 can be solenoid.Alternatively, helix tube is multiturn.The material of induction annular element 20 can be the metals such as copper, aluminium, can be also metal alloy.The material of mount pad 40 can be pottery, quartzy.
Plasma apparatus is according to an embodiment of the invention described below.Described plasma apparatus comprises: reaction chamber, and reaction chamber can be according to the reaction chamber described in the above embodiment of the present invention; With coil 30, coil 30 is located on the periphery wall of reaction chamber 101 around ground.
Plasma apparatus according to an embodiment of the invention, in the reaction chamber of plasma apparatus, there is induction annular element 20, induction annular element 20 can reduce reaction chamber 101 center plasma densitys by the magnetic field intensity changing in reaction chamber 101, increase the plasma density at reaction chamber 101 edges, thereby reduce reaction chamber 101 margin and center region plasma density differences, improve the uniformity that plasma distributes, thereby effectively improve the effect of wafer or workpiece prerinse PROCESS FOR TREATMENT, improve technique applicability, be conducive to the exploitation of wafer or workpiece product.
In one embodiment of the invention, induction annular element 20 is located at the top of the center of reaction chamber 101, as shown in Figure 3, in the time that coil 30 applies power, induction annular element 20 can be induced to produce the electromagnetic field B ' (as shown in Figure 3) of an electromagnetic field B opposite direction producing with coil 30, like this, arrive chamber center in induction annular element 20 inner sides, the opposite direction of the electromagnetic field B that the direction of electromagnetic field B ' and coil 30 produce, weaken the electromagnetic field at center, to reduce center plasma density; Meanwhile, by induction annular element 20 outsides within the scope of chamber sidewall, magnetic field B ' direction of the electromagnetic field B that produces with coil 30 with direction is identical, increased this region internal magnetic field intensity, the plasma density in this region of corresponding raising.
According to one embodiment of present invention, plasma apparatus can be vapor deposition apparatus, plasma etching equipment or apparatus for plasma chemical vapor deposition.
According to one embodiment of present invention, reaction chamber can be pre-cleaning cavity.
It should be noted that, can be for Al(aluminium according to the reaction chamber of the embodiment of the present invention and plasma apparatus), the wafer cleaning technique in the PVD field such as titanium/titanium nitride (Ti/TiN), tungsten (W).In addition, also can be applied to silicon perforation (TSV, Through Silicon Via), wafer-level packaging (Wafer Level Packaging) technology field.Also can be used for Cubarrier/seed(copper stops and inculating crystal layer) the prerinse technique of PVD technology field.
In the description of this specification, the description of reference term " embodiment ", " some embodiment ", " illustrative examples ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present invention or example in conjunction with specific features, structure, material or the feature of this embodiment or example description.In this manual, the schematic statement of above-mentioned term is not necessarily referred to identical embodiment or example.And specific features, structure, material or the feature of description can be with suitable mode combination in any one or more embodiment or example.
Although illustrated and described embodiments of the invention, those having ordinary skill in the art will appreciate that, in the situation that not departing from principle of the present invention and aim, can carry out multiple variation, amendment, replacement and modification to these embodiment, scope of the present invention is limited by claim and equivalent thereof.
Claims (18)
1. a reaction chamber, is characterized in that, comprising:
Cavity, has reaction chamber in described cavity;
Induction annular element, described induction annular element is located in reaction chamber, for weakening the magnetic field intensity of described reaction chamber center and strengthening the magnetic field intensity at described reaction chamber outer peripheral edges place.
2. reaction chamber according to claim 1, is characterized in that, described induction annular element is arranged on the center of described reaction chamber and is positioned at the top of described reaction chamber.
3. reaction chamber according to claim 1, is characterized in that, described induction annular element is arranged on the roof of described reaction chamber.
4. reaction chamber according to claim 3, is characterized in that, described induction annular element is arranged on the roof of described reaction chamber by mount pad.
5. reaction chamber according to claim 4, it is characterized in that, described mount pad comprises: the first clamping plate and the second clamping plate, described the first clamping plate have the first curved portions and the first flat part, described the second clamping plate have the second curved portions and the second flat part, and described the second flat part is relative to described the first curved portions with corresponding and described the second curved portions of described the first flat part to be formed for clamping the clamping hole of described induction annular element.
6. reaction chamber according to claim 5, is characterized in that, described mount pad is by passing on the roof that is bolted to described reaction chamber of described the first and second flat parts.
7. reaction chamber according to claim 4, is characterized in that, described mount pad comprises:
The first clamping plate, described the first clamping plate are inverted L-shaped, the surface of the vertical limb of described the first clamping plate is provided with the first groove; With
The second clamping plate, described the second clamping plate are that flat board is provided with the second groove, described the second clamping plate be fixed on described the first clamping plate and described the second groove relative to described the first groove to be formed for clamping the clamping hole of described induction annular element.
8. reaction chamber according to claim 7, is characterized in that, described mount pad is by running through on the roof that is bolted to described reaction chamber of horizontal limb of described the first clamping plate.
9. reaction chamber according to claim 6, is characterized in that, described the first and second grooves are multiple and corresponding to form multiple described clamping holes one by one each other.
10. reaction chamber according to claim 1, is characterized in that, described induction annular element be multiple and along the vertical direction compartment of terrain be located in described reaction chamber.
11. reaction chambers according to claim 1, is characterized in that, described induction annular element is tubular.
12. reaction chambers according to claim 1, is characterized in that, described induction annular element is circular rings or positive shape changeable ring.
13. according to the reaction chamber described in any one in claim 1-12, it is characterized in that, described induction annular element is passive metal ring.
14. according to the reaction chamber described in any one in claim 1-12, it is characterized in that, described induction annular element is solenoid.
15. reaction chambers according to claim 14, is characterized in that, described helix tube is multiturn.
16. 1 kinds of plasma apparatus, is characterized in that, comprising:
Reaction chamber, described reaction chamber is according to the reaction chamber described in any one in claim 1-14; With
Coil is located on the periphery wall of described reaction chamber described coil encircling.
17. plasma apparatus according to claim 16, is characterized in that, described plasma apparatus is vapor deposition apparatus, plasma etching equipment or apparatus for plasma chemical vapor deposition.
18. plasma apparatus according to claim 16, is characterized in that, described reaction chamber is pre-cleaning cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310029533.8A CN103972012A (en) | 2013-01-25 | 2013-01-25 | Reaction chamber and plasma equipment with same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310029533.8A CN103972012A (en) | 2013-01-25 | 2013-01-25 | Reaction chamber and plasma equipment with same |
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| CN103972012A true CN103972012A (en) | 2014-08-06 |
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| CN201310029533.8A Pending CN103972012A (en) | 2013-01-25 | 2013-01-25 | Reaction chamber and plasma equipment with same |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108575042A (en) * | 2017-03-09 | 2018-09-25 | 北京北方华创微电子装备有限公司 | A kind of coil, medium cylinder and plasma chamber |
| TWI697259B (en) * | 2018-06-04 | 2020-06-21 | 優貝克科技股份有限公司 | Use of high-power instantaneous pulse electromagnetic field equipment |
| CN111769060A (en) * | 2020-07-27 | 2020-10-13 | 上海邦芯半导体设备有限公司 | Inductive coupling reactor and working method thereof |
| CN113808898A (en) * | 2020-06-16 | 2021-12-17 | 中微半导体设备(上海)股份有限公司 | Plasma corrosion resistant part, reaction device and composite coating forming method |
| CN114836735A (en) * | 2021-02-01 | 2022-08-02 | 江苏菲沃泰纳米科技股份有限公司 | ICP-based plasma coating device and method |
| CN116673273A (en) * | 2023-08-03 | 2023-09-01 | 北京奇峰蓝达光学科技发展有限公司 | Method and device for removing impurities on surface of calcium fluoride raw material |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108575042A (en) * | 2017-03-09 | 2018-09-25 | 北京北方华创微电子装备有限公司 | A kind of coil, medium cylinder and plasma chamber |
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| CN113808898A (en) * | 2020-06-16 | 2021-12-17 | 中微半导体设备(上海)股份有限公司 | Plasma corrosion resistant part, reaction device and composite coating forming method |
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| CN114836735A (en) * | 2021-02-01 | 2022-08-02 | 江苏菲沃泰纳米科技股份有限公司 | ICP-based plasma coating device and method |
| CN114836735B (en) * | 2021-02-01 | 2024-01-19 | 江苏菲沃泰纳米科技股份有限公司 | Plasma coating device and method based on ICP |
| CN116673273A (en) * | 2023-08-03 | 2023-09-01 | 北京奇峰蓝达光学科技发展有限公司 | Method and device for removing impurities on surface of calcium fluoride raw material |
| CN116673273B (en) * | 2023-08-03 | 2023-10-27 | 北京奇峰蓝达光学科技发展有限公司 | Method and device for removing impurities on surface of calcium fluoride raw material |
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Application publication date: 20140806 |