CN103970317A - Touch sensor and touch panel - Google Patents
Touch sensor and touch panel Download PDFInfo
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- CN103970317A CN103970317A CN201310033139.1A CN201310033139A CN103970317A CN 103970317 A CN103970317 A CN 103970317A CN 201310033139 A CN201310033139 A CN 201310033139A CN 103970317 A CN103970317 A CN 103970317A
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- conducting element
- axial electrode
- touch
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- dielectric
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0445—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
Abstract
The invention relates to the field of touch technology, and provides a touch sensor. The touch sensor comprises a first conductive element, a second conductive element and a dielectric element, wherein the second conductive element is crystallographic indium tin oxide thin film which is conducted by sputtering film forming in the environment that the temperature is higher than or equal to 160 DEG C; the dielectric element is arranged between the first conductive element and the second conductive element. According to the invention, the second conductive element has the characteristics of high transparency, low value of resistance and high stability; the stability of the touch sensor can be improved; the stability of a sensing circuit of a touch surface is ensured; the service life of a touch panel is prolonged. The invention further provides a touch panel.
Description
Technical field
The present invention relates to touch technology, espespecially a kind of touch-control sensor and contact panel.
Background technology
The interface tool that contact panel (touch panel) is linked up as data, has been widely used in the fields such as household supplies, communication device and electronics information device.
The frivolous important directions that turns to its development of contact panel, but its development is limited to again structural behaviour and making technology, specifically, in the time pursuing contact panel lightening, in some solutions, wish to realize by the thickness of the inner each level of reduction contact panel, but due to ensure structural behaviour good, the thickness of some hierarchical structure is restricted, if the material that hierarchical structure is used is replaced, to be limited to again the factors such as making technology, therefore the equilibrium point of finding is wherein to realize the lightening key of contact panel.
Summary of the invention
The invention provides a kind of touch-control sensor and a kind of contact panel, can, under the prerequisite of premium properties that ensures contact panel, realize the lightening of contact panel.
The invention provides a kind of touch-control sensor, it is characterized in that, comprising: one first conducting element; One second conducting element, wherein said the second conducting element be temperature be more than or equal to the environment of 160 degrees Celsius in the crystallization indium tin oxide films of forming sputtering film; And one dielectric element be arranged between described the first conducting element and described the second conducting element.
In an alternate embodiment, the dielectric constant values of described dielectric element is more than or equal to 5, and is less than or equal to 80.
In an alternate embodiment, the thickness range of described dielectric element is for being more than or equal to 0.05 micron, and is less than or equal to 1 micron.
In an alternate embodiment, described the first conducting element be temperature be more than or equal to the environment of 160 degrees Celsius in the crystallization indium tin oxide films of forming sputtering film.
In an alternate embodiment, described the first conducting element comprises plural the first axial electrode and complex conduction unit, described the second conducting element comprises plural electric wiring, wherein said the first axial electrode is electrically insulated each other, described conductive unit insulate each other, described electric wiring is electrically connected two adjacent described conductive units, to form plural the second axial electrode.
In an alternate embodiment, described the first conducting element comprises plural electric wiring, described the second conducting element comprises plural the first axial electrode and complex conduction unit, wherein said the first axial electrode is electrically insulated each other, described conductive unit insulate each other, described electric wiring is electrically connected two adjacent described conductive units, to form plural the second axial electrode.
In an alternate embodiment, described dielectric element is made up of plural collets, and described collets correspondence is arranged between described electric wiring and described the first axial electrode, with described the first axial electrode and described the second axial electrode of being electrically insulated.
In an alternate embodiment, described dielectric element covers described the first conducting element, and in described electric wiring and described conductive unit junction, respective perforations is set.
In an alternate embodiment, described the first conducting element comprises plural the first axial electrode, described the first axial electrode mutually insulated, described the second conducting element comprises plural the second axial electrode, described the second axial electrode mutually insulated, wherein said dielectric element is arranged between described the first axial electrode and described the second axial electrode, with described the first axial electrode and described the second axial electrode of being electrically insulated.
In an alternate embodiment, described the second conducting element in temperature for being more than or equal to 260 degrees Celsius, and be less than or equal to the crystallization indium tin oxide films of forming sputtering film in the environment of 300 degrees Celsius.
In an alternate embodiment, described dielectric element material is the one in silicon nitride, alundum (Al2O3), hafnium silicon oxide, yttria, tantalum oxide, zirconia, hafnium oxide, lanthanum aluminum oxide, titania and composition thereof.
In an alternate embodiment, the material of described the first conducting element, described the second conducting element and described dielectric element is transparent material.
The present invention separately provides a kind of contact panel, it is characterized in that, comprising: a touch-control sensor, comprises one first conducting element; One second conducting element, wherein said the second conducting element be temperature be more than or equal to the environment of 160 degrees Celsius in the crystallization indium tin oxide films of forming sputtering film; And one dielectric element be arranged between described the first conducting element and described the second conducting element; One substrate, described the first conducting element is located on described substrate.
In an alternate embodiment, the dielectric constant values of described dielectric element is more than or equal to 5, and is less than or equal to 80.
In an alternate embodiment, the thickness range of described dielectric element is for being more than or equal to 0.05 micron, and is less than or equal to 1 micron.
In an alternate embodiment, described the first conducting element is crystallization indium tin oxide films.
In an alternate embodiment, described the first conducting element comprises plural the first axial electrode and complex conduction unit, described the second conducting element comprises plural electric wiring, wherein said the first axial electrode is electrically insulated each other, described conductive unit insulate each other, described electric wiring is electrically connected two adjacent described conductive units, to form plural the second axial electrode.
In an alternate embodiment, described dielectric element is made up of plural collets, and described collets correspondence is arranged between described electric wiring and described the first axial electrode, with described the first axial electrode and described the second axial electrode of being electrically insulated.
In an alternate embodiment, described dielectric element covers described the first conducting element, and in described electric wiring and described conductive unit junction, respective perforations is set.
In an alternate embodiment, described the first conducting element comprises plural the first axial electrode, described the first axial electrode mutually insulated, described the second conducting element comprises plural the second axial electrode, described the second axial electrode mutually insulated, wherein said dielectric element is arranged between described the first axial electrode and described the second axial electrode, with described the first axial electrode and described the second axial electrode of being electrically insulated.
In an alternate embodiment, described substrate is a strengthening glass sheets.
In an alternate embodiment, described the second conducting element in temperature for being more than or equal to 260 degrees Celsius, and be less than or equal to the crystallization indium tin oxide films of forming sputtering film in the environment of 300 degrees Celsius.
In an alternate embodiment, described dielectric element material is the one in silicon nitride, alundum (Al2O3), hafnium silicon oxide, yttria, tantalum oxide, zirconia, hafnium oxide, lanthanum aluminum oxide, titania and composition thereof.
In an alternate embodiment, the material of described the first conducting element, described the second conducting element and described dielectric element is transparent material.
In the present invention, by adopt temperature be more than or equal to the environment of 160 degrees Celsius in the crystallization indium tin oxide films of forming sputtering film as the second conducting element, make the performance of the second conducting element there is high transmission rate, low resistance, high stability, and the feature of thin thickness, the second conducting element stable performance is promoted, not only reduce the thickness of contact panel, and ensured the performance of contact panel simultaneously.
Brief description of the drawings
Fig. 1 is the rhythmo structure schematic diagram of touch-control sensor of the present invention;
Fig. 2 A is the first embodiment schematic diagram of touch-control sensor of the present invention;
Fig. 2 B is the diagrammatic cross-section along the profile line II ' showing in Fig. 2 A;
Fig. 3 A is touch-control sensor the second example structure schematic diagram of the present invention;
Fig. 3 B is one embodiment of the invention structural representation;
Fig. 4 A is third embodiment of the invention structural representation;
Fig. 4 B is the diagrammatic cross-section along the profile line HH ' showing in Fig. 4 A;
Fig. 5 A is fourth embodiment of the invention structural representation;
Fig. 5 B is one embodiment of the invention structural representation;
Fig. 6 is that the thickness of crystallization indium tin oxide films in the present invention varies with temperature schematic diagram.
Embodiment
As shown in Figure 1, the rhythmo structure schematic diagram that Fig. 1 is touch-control sensor of the present invention.Touch-control sensor 10, comprising: the first conducting element 11, the second conducting element 12 and dielectric element 13, and be positioned on the first conducting element 11, dielectric element 13 is arranged between the first conducting element 11 and the second conducting element 12.Below in conjunction with accompanying drawing and embodiment, the present invention is described in further detail.
As shown in Figure 2 A and 2 B, the first embodiment schematic diagram that Fig. 2 A is touch-control sensor of the present invention, Fig. 2 B is the diagrammatic cross-section along the hatching line II ' showing in Fig. 2 A.The present embodiment discloses a kind of touch-control sensor 101 of two-layer electrode structure.Touch-control sensor 101 comprises the first conducting element 11, the second conducting element 12 and dielectric element 13, and wherein, the second conducting element 12 is positioned on the first conducting element 11, and dielectric element 13 is arranged between the first conducting element 11 and the second conducting element 12.The first conducting element 11 comprises plural the first axial electrode 111, and plural the first axial electrode is extended along first direction X, and is mutually electrically insulated; The second conducting element 12 comprises plural the second axial electrode 121, and plural the second axial electrode is extended along Y-direction, and mutually insulated; Dielectric element 13 is arranged between the first axial electrode 111 and the second axial electrode 121, with the first axial electrode 111 and the second axial electrode 121 of being electrically insulated.The first axial electrode 111 and the second axial electrode 121 be for receiving touch action, and produce corresponding output signal.
In the present embodiment, dielectric element 13 is whole structure, it should be noted that, in other embodiment of the present invention, dielectric element 13 also can be made up of plural collets, these collets can be identical and overlapped with the first conducting element 11 or the second conducting element 12 patterns, also can only be arranged at the first conducting element 11 and the second conducting element 12 intersections.
As shown in Figure 3A, Fig. 3 A is touch-control sensor the second example structure schematic diagram of the present invention.The present embodiment discloses a kind of touch-control sensor 102 of single-layer electrodes structure.Touch-control sensor 102 comprises the first conducting element 11, the second conducting element 12 and dielectric element 13, and wherein, the second conducting element 12 is positioned on the first conducting element 11, and dielectric element 13 is arranged between the first conducting element 11 and the second conducting element 12.The first conducting element 11 comprises plural the first axial electrode 111 and complex conduction unit 1211, the second conducting elements 12 comprise plural electric wiring 1212, and electric wiring 1212 is electrically connected two adjacent conductive units 1211, to form plural the second axial electrode 121.Member that it should be noted that the first conducting element 11 and the second conducting element 12 can be exchanged mutually, and in other words, the first conducting element comprises plural electric wiring, and the second conducting element comprises plural the first axial electrode and complex conduction unit.Plural number the first axial electrode 111 is extended along directions X, and mutually insulated each other, and conductive unit 1211 is arranged along Y-direction, and insulation each other, mutually insulated between the first axial electrode 111 and conductive unit 1211.In the present embodiment, dielectric element 13 is made up of plural collets 131, and collets correspondence is arranged between electric wiring 1212 and the first axial electrode 111, with the first axial electrode 111 and the second axial electrode 121 of being electrically insulated.It should be noted that in other embodiment of the present invention, as shown in Figure 3 B, Fig. 3 B is one embodiment of the invention structural representation.Dielectric element 13 can be the structure of whole perforation, that is to say, dielectric element 13 covers the first conducting element 11, and be provided with perforation 130 in electric wiring 1212 and electric connection place of conductive unit 1211, to ensure the conduction of electric wiring 1212 and conductive unit 1211, and ensure electric wiring 1212 and the first axial electrode 111 mutually insulateds.
In addition, the present invention also provides a kind of contact panel, and as shown in Fig. 4 A and Fig. 4 B, Fig. 4 A is third embodiment of the invention structural representation, and Fig. 4 B is the diagrammatic cross-section along Fig. 4 A section line HH '.Contact panel 20 comprises touch-control sensor 21 and substrate 22, wherein touch-control sensor 21 comprises the first conducting element 31, the second conducting element 32 and dielectric element 33, wherein the first conducting element 31 is located on substrate 22, wherein the second conducting element 32 is in temperature being the crystallization indium tin oxide films that is more than or equal to forming sputtering film in the environment of 160 degrees Celsius, and be positioned on the first conducting element 31, dielectric element 33 is arranged between the first conducting element 31 and the second conducting element 32.
In the present embodiment, touch-control sensor is the touch-control sensor 21 of two-layer electrode structure, and wherein the first conducting element 31 comprises plural the first axial electrode 311, and plural the first axial electrode 311 is arranged on substrate 22, and extend along first direction X, and be mutually electrically insulated; The second conducting element 32 comprises plural the second axial electrode 321, and plural the second axial electrode 321 is extended along Y-direction, and mutually insulated; Dielectric element 33 is arranged between the first axial electrode 311 and the second axial electrode 321, with the first axial electrode 311 and the second axial electrode 321 of being electrically insulated.The first axial electrode 311 and the second axial electrode 321 be for receiving touch action, and produce corresponding output signal.
In the present embodiment, dielectric element 33 is whole structure, it should be noted that, in other embodiment of the present invention, dielectric element 33 also can be made up of plural collets, these collets can be identical and overlapped with the first conducting element 31 or the second conducting element 32 patterns, also can only be arranged at the first conducting element 31 and the second conducting element 32 intersections.
In the present embodiment, touch-control sensor 21 is two-layer electrode structure, is understandable that, in the present invention, touch-control sensing structure can be also single-layer electrodes structure, and as shown in Figure 5A, Fig. 5 A is fourth embodiment of the invention structural representation.Contact panel 20 comprises touch-control sensor 21 and substrate 22, wherein touch-control sensor 21 comprises the first conducting element 31, the second conducting element 32 and dielectric element 33, wherein the first conducting element 31 is located on substrate 22, comprise plural the first axial electrode 311 and complex conduction unit 3211, the second conducting element 32 comprises plural electric wiring 3212, electricity wiring 3212 is electrically connected two adjacent conductive units 3211, to form plural the second axial electrode 321.The first axial electrode 311 is extended along directions X, and mutually insulated each other, and conductive unit 3211 is arranged along Y-direction, and insulation each other, mutually insulated between the first axial electrode 311 and conductive unit 3211.In the present embodiment, dielectric element 33 is made up of plural collets 331, and collets 331 correspondences are arranged between electric wiring 3212 and the first axial electrode 311, with the first axial electrode 311 and the second axial electrode 321 of being electrically insulated.It should be noted that in other embodiment of the present invention, as shown in Figure 5 B, Fig. 5 B is one embodiment of the invention structural representation.Dielectric element 33 can be the structure of whole perforation, that is to say, dielectric element 33 covers the first conducting element 31, and be provided with perforation 330 in electric wiring 3212 and electric connection place of conductive unit 3211, to ensure the conduction of electric wiring 3212 and conductive unit 3211, and ensure electric wiring 3212 and the first axial electrode 311 mutually insulateds.
In above-described embodiment, substrate 22, for for carrying the support plate of touch-control sensor 21, after fitting with a cover plate, can use as touch control device separately, or again with the electronic equipment assembling such as display screen, form touching display screen.
In addition, substrate 22 also can be a strengthening glass sheets, this glass plate comprises upper and lower two apparent surfaces, wherein upper surface can be directly used in user's touching, touch-control sensor is arranged at lower surface, to form the contact panel of an one chip, more directly with the electronic equipment assembling such as display screen, formation touching display screen.This one chip contact panel is more frivolous.
In the present invention, the second conducting element 12 is in temperature being the crystallization indium tin oxide films that is more than or equal to forming sputtering film in the environment of 160 degrees Celsius, and general indium tin oxide films be all first temperature lower than the environment of 160 degrees Celsius under sputter form amorphous indium tin oxide films, make its crystallization by pyroprocessing again, to obtain crystallization indium tin oxide films, the difference of the crystallization indium tin oxide films that crystallization indium tin oxide films of the present invention and general technology form is, in the time that sheet resistance is fixing, the thickness of crystallization indium tin oxide films of the present invention only for general technology form crystallization indium tin oxide films thickness 50%, for example, the sheet resistance of product requirement indium tin oxide films is 75 ohm, by being that the thickness that is more than or equal to the crystallization indium tin oxide films of forming sputtering film in the environment of 160 degrees Celsius is approximately 0.023 micron in temperature, and the crystallization indium tin oxide films thickness obtaining by pyroprocessing amorphous tin indium oxide is approximately 0.046 micron.That is to say, the present invention can realize the lightening of contact panel by reducing the thickness of the second conducting element, moreover, the crystallization indium tin oxide films that the disclosed crystallization indium tin oxide films of the present invention forms compared with general technology also possesses the advantages such as penetrability is high, material surface is more smooth, electricity conduction is good.
It should be noted that, in the present invention, the material of the first conducting element also can be for being the crystallization indium tin oxide films that is more than or equal to forming sputtering film in the environment of 160 degrees Celsius in temperature, reach lifting with the overall performance that makes touch-control sensor, can further realize again the lightening of contact panel simultaneously.
It should be noted that, the first conducting element and the second conducting element be all temperature be more than or equal to the environment of 160 degrees Celsius in the embodiment of crystallization indium tin oxide films of forming sputtering film, in manufacturing process, wherein a conductive layer need to be made (the first conducting element or the second conducting element) after dielectric element forms again, and hot environment in manufacturing process will have influence on the dielectric element of moulding simultaneously, for instance, in the time forming the second conducting element, at least need to ensure that environment temperature is greater than 160 degrees Celsius, general organic photoresistance insulating material is under this temperature environment, can there is cracking, thereby produce the reduction of deformation and insulating property, have a strong impact on product yield.For the performance that ensures dielectric element is not destroyed by hot environment, in the present embodiment, the better specific inductive capacity of selecting of dielectric element is more than or equal to 5, and be less than or equal to 80 material, such as silicon nitride (Si3N4), alundum (Al2O3) (Al2O3), hafnium silicon oxide (HfSiO4), yttria (Y2O3), tantalum oxide (Ta2O3), zirconia (ZrO2), hafnium oxide (HfO2), lanthanum aluminum oxide (LnAlO3), titania (TiO2) and composition thereof etc.For example, dielectric element can be made up of tantalum oxide (Ta2O3) separately, also can be the potpourri of above-mentioned material, such as tantalum oxide-hafnium silicon oxide (Ta2O3-HfO2), tantalum oxide-silicon dioxide (Ta2O3-SiO2), silicon dioxide-tantalum oxide-hafnium silicon oxide (SiO2-Ta2O3-HfO2) etc.Select this kind of material can significantly alleviate the generation of avoiding this phenomenon even completely.
Moreover, use dielectric constant values to be more than or equal to 5, and be less than or equal to 80 material when making dielectric element, the thickness range of dielectric element is for being more than or equal to 0.05 micron, and be less than or equal to 1 micron, therefore also can reduce the integrally-built thickness of touch-control sensor, particularly, in touch-control sensor of the present invention, not only can by use temperature be more than or equal to the environment of 160 degrees Celsius in the crystallization indium tin oxide films of forming sputtering film as the second conducting element and, or use when the first conducting element specific inductive capacity to be more than or equal to 5 and be less than or equal to 80 material as dielectric element, reduce the thickness of touch-control sensor with entirety, and ensure the performance of touch-control sensor simultaneously, can also be only by using dielectric constant values to be more than or equal to 5 and be less than or equal to 80 material as dielectric element, to reach the object that reduces touch-control sensor thickness.
In the present invention, for meeting the day by day frivolous growth requirement of contact panel, in conjunction with the factor such as cost of manufacture and process conditions, the Optimal Temperature scope of sputter formation crystallization indium tin oxide films is 260 degrees Celsius 300 degrees Celsius, as shown in Fig. 6 institute, Fig. 6 is that the thickness of crystallization indium tin oxide films in the present invention varies with temperature schematic diagram.In the time that the sheet resistance of crystallization tin indium oxide is a fixed value, as can be seen from Figure 6, in the time that temperature is less than 160 degrees Celsius, represent that the curve of crystallization tin indium oxide thickness is comparatively precipitous, be illustrated in this temperature range, the thickness of crystallization tin indium oxide varies with temperature larger; In the time that temperature range is between 160 degrees Celsius to 260 degrees Celsius, it is comparatively mild that curve obviously becomes, and is illustrated in this temperature range, and the thickness variation with temperature of crystallization tin indium oxide is comparatively mild, but as a whole, the trend that still has certain radian to reduce; When temperature range is during at 260 degrees Celsius to 300 degrees Celsius, curve convergence is parallel with X-axis, be illustrated in this temperature range, the thickness of crystallization tin indium oxide changes with the change of temperature hardly, in conjunction with considering of above-mentioned cost of manufacture and technology difficulty, temperature range for be more than or equal to 260 degrees Celsius and be less than or equal to 300 degrees Celsius for the present invention preferred.
In the present invention, preferably, the material of the first conducting element, the second conducting element and dielectric element can be transparent material, making touch-control sensor is an all-transparent structure, further, the substrate in the present invention can be also transparent substrate, in actual application, before contact panel can directly be arranged at display screen, and do not affect the display effect of display screen.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any amendment of making, be equal to replacement, improvement etc., within all should being included in the scope of protection of the invention.
Claims (30)
1. a touch-control sensor, is characterized in that, comprising:
One first conducting element;
One second conducting element, wherein said the second conducting element be temperature be more than or equal to the environment of 160 degrees Celsius in the crystallization indium tin oxide films of forming sputtering film; And
One dielectric element is arranged between described the first conducting element and described the second conducting element.
2. touch-control sensor as claimed in claim 1, is characterized in that, the dielectric constant values of described dielectric element is more than or equal to 5, and is less than or equal to 80.
3. touch-control sensor as claimed in claim 2, is characterized in that, the thickness range of described dielectric element is for being more than or equal to 0.05 micron, and is less than or equal to 1 micron.
4. touch-control sensor as claimed in claim 1, is characterized in that, described the first conducting element be temperature be more than or equal to the environment of 160 degrees Celsius in the crystallization indium tin oxide films of forming sputtering film.
5. touch-control sensor as claimed in claim 1, it is characterized in that, described the first conducting element comprises plural the first axial electrode and complex conduction unit, described the second conducting element comprises plural electric wiring, wherein said the first axial electrode is electrically insulated each other, described conductive unit insulate each other, and described electric wiring is electrically connected two adjacent described conductive units, to form plural the second axial electrode.
6. touch-control sensor as claimed in claim 1, it is characterized in that, described the first conducting element comprises plural electric wiring, described the second conducting element comprises plural the first axial electrode and complex conduction unit, wherein said the first axial electrode is electrically insulated each other, described conductive unit insulate each other, and described electric wiring is electrically connected two adjacent described conductive units, to form plural the second axial electrode.
7. the touch-control sensor as described in claim 5 or 6, it is characterized in that, described dielectric element is made up of plural collets, and described collets correspondence is arranged between described electric wiring and described the first axial electrode, with described the first axial electrode and described the second axial electrode of being electrically insulated.
8. the touch-control sensor as described in claim 5 or 6, is characterized in that, described dielectric element covers described the first conducting element, and in described electric wiring and described conductive unit junction, respective perforations is set.
9. touch-control sensor as claimed in claim 1, it is characterized in that, described the first conducting element comprises plural the first axial electrode, described the first axial electrode mutually insulated, described the second conducting element comprises plural the second axial electrode, described the second axial electrode mutually insulated, wherein said dielectric element is arranged between described the first axial electrode and described the second axial electrode, with described the first axial electrode and described the second axial electrode of being electrically insulated.
10. touch-control sensor as claimed in claim 1, is characterized in that, described the second conducting element in temperature for being more than or equal to 260 degrees Celsius, and be less than or equal to the crystallization indium tin oxide films of forming sputtering film in the environment of 300 degrees Celsius.
11. touch-control sensors as claimed in claim 1, it is characterized in that, described dielectric element material is the one in silicon nitride, alundum (Al2O3), hafnium silicon oxide, yttria, tantalum oxide, zirconia, hafnium oxide, lanthanum aluminum oxide, titania and composition thereof.
12. touch-control sensors as claimed in claim 1, is characterized in that, the material of described the first conducting element, described the second conducting element and described dielectric element is transparent material.
13. 1 kinds of contact panels, is characterized in that, comprising:
One touch-control sensor, comprises one first conducting element; One second conducting element, wherein said the second conducting element be temperature be more than or equal to the environment of 160 degrees Celsius in the crystallization indium tin oxide films of forming sputtering film; And one dielectric element be arranged between described the first conducting element and described the second conducting element;
One substrate, described the first conducting element is located on described substrate.
14. contact panels as claimed in claim 13, is characterized in that, the dielectric constant values of described dielectric element is more than or equal to 5, and are less than or equal to 80.
15. contact panels as claimed in claim 13, is characterized in that, the thickness range of described dielectric element is for being more than or equal to 0.05 micron, and are less than or equal to 1 micron.
16. contact panels as claimed in claim 13, is characterized in that, described the first conducting element be temperature be more than or equal to the environment of 160 degrees Celsius in the crystallization indium tin oxide films of forming sputtering film.
17. contact panels as claimed in claim 13, it is characterized in that, described the first conducting element comprises plural the first axial electrode and complex conduction unit, described the second conducting element comprises plural electric wiring, wherein said the first axial electrode is electrically insulated each other, described conductive unit insulate each other, and described electric wiring is electrically connected two adjacent described conductive units, to form plural the second axial electrode.
18. contact panels as claimed in claim 17, it is characterized in that, described dielectric element is made up of plural collets, and described collets correspondence is arranged between described electric wiring and described the first axial electrode, with described the first axial electrode and described the second axial electrode of being electrically insulated.
19. contact panels as claimed in claim 17, is characterized in that, described dielectric element covers described the first conducting element, and in described electric wiring and described conductive unit junction, respective perforations are set.
20. contact panels as claimed in claim 13, it is characterized in that, described the first conducting element comprises plural the first axial electrode, described the first axial electrode mutually insulated, described the second conducting element comprises plural the second axial electrode, described the second axial electrode mutually insulated, wherein said dielectric element is arranged between described the first axial electrode and described the second axial electrode, with described the first axial electrode and described the second axial electrode of being electrically insulated.
21. contact panels as claimed in claim 13, is characterized in that, described substrate is a strengthening glass sheets.
22. touch-control sensors as claimed in claim 13, is characterized in that, described the second conducting element in temperature for being more than or equal to 260 degrees Celsius, and be less than or equal to the crystallization indium tin oxide films of forming sputtering film in the environment of 300 degrees Celsius.
23. contact panels as claimed in claim 13, it is characterized in that, described dielectric element material is the one in silicon nitride, alundum (Al2O3), hafnium silicon oxide, yttria, tantalum oxide, zirconia, hafnium oxide, lanthanum aluminum oxide, titania and composition thereof.
24. touch-control sensors as claimed in claim 13, is characterized in that, the material of described the first conducting element, described the second conducting element and described dielectric element is transparent material.
25. 1 kinds of touch-control sensors, is characterized in that, comprising:
One first conducting element;
One second conducting element; And
One dielectric element is arranged between described the first conducting element and described the second conducting element, and the dielectric constant values of wherein said dielectric element is more than or equal to 5, and is less than or equal to 80.
26. touch-control sensors as claimed in claim 25, is characterized in that, the thickness range of described dielectric element is for being more than or equal to 0.05 micron, and are less than or equal to 1 micron.
27. touch-control sensors as claimed in claim 25, is characterized in that, described the first conducting element and described the second conducting element be temperature be more than or equal to the environment of 160 degrees Celsius in the crystallization indium tin oxide films of forming sputtering film.
28. touch-control sensors as claimed in claim 25, it is characterized in that, described the first conducting element comprises plural the first axial electrode and complex conduction unit, described the second conducting element comprises plural electric wiring, wherein said the first axial electrode is electrically insulated each other, described conductive unit insulate each other, and described electric wiring is electrically connected two adjacent described conductive units, to form plural the second axial electrode.
29. touch-control sensors as claimed in claim 28, it is characterized in that, described dielectric element is made up of plural collets, and described collets correspondence is arranged between described electric wiring and described the first axial electrode, with described the first axial electrode and described the second axial electrode of being electrically insulated.
30. touch-control sensors as claimed in claim 28, is characterized in that, described dielectric element covers described the first conducting element, and in described electric wiring and described conductive unit junction, respective perforations are set.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310033139.1A CN103970317B (en) | 2013-01-28 | 2013-01-28 | Touch-control sensor and contact panel |
| TW102144086A TWI499960B (en) | 2013-01-28 | 2013-12-02 | Touch sensing device and touch panel thereof |
| PCT/CN2014/070884 WO2014114211A1 (en) | 2013-01-28 | 2014-01-20 | Touch sensor and touch panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310033139.1A CN103970317B (en) | 2013-01-28 | 2013-01-28 | Touch-control sensor and contact panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103970317A true CN103970317A (en) | 2014-08-06 |
| CN103970317B CN103970317B (en) | 2017-09-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310033139.1A Expired - Fee Related CN103970317B (en) | 2013-01-28 | 2013-01-28 | Touch-control sensor and contact panel |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN103970317B (en) |
| TW (1) | TWI499960B (en) |
| WO (1) | WO2014114211A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108762555A (en) * | 2018-05-21 | 2018-11-06 | 京东方科技集团股份有限公司 | Touch base plate and touch device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101493737A (en) * | 2009-02-27 | 2009-07-29 | 深圳市豪威薄膜技术有限公司 | Display touch screen structure and method for producing the same |
| JP2011103289A (en) * | 2009-10-13 | 2011-05-26 | Toyobo Co Ltd | Transparent conductive laminated film, transparent conductive laminated sheet, and touch panel |
| CN102270074A (en) * | 2010-06-02 | 2011-12-07 | 群康科技(深圳)有限公司 | Electrode structure and manufacturing method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3224352B2 (en) * | 1997-02-21 | 2001-10-29 | 出光興産株式会社 | Multicolor light emitting device |
| TWI322374B (en) * | 2006-04-14 | 2010-03-21 | Ritdisplay Corp | Light transmission touch panel and manufacturing method thereof |
| TWI389020B (en) * | 2008-03-25 | 2013-03-11 | Elan Microelectronics | Touch panel device |
| TWI575281B (en) * | 2009-08-19 | 2017-03-21 | Elan Microelectronics Corp | Capacitive touch panel and manufacturing method thereof |
| WO2012026519A1 (en) * | 2010-08-26 | 2012-03-01 | パナソニック株式会社 | Electrically conductive transparent base, touch panel, resistive touch panel, and capacitive touch panel |
-
2013
- 2013-01-28 CN CN201310033139.1A patent/CN103970317B/en not_active Expired - Fee Related
- 2013-12-02 TW TW102144086A patent/TWI499960B/en active
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2014
- 2014-01-20 WO PCT/CN2014/070884 patent/WO2014114211A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101493737A (en) * | 2009-02-27 | 2009-07-29 | 深圳市豪威薄膜技术有限公司 | Display touch screen structure and method for producing the same |
| JP2011103289A (en) * | 2009-10-13 | 2011-05-26 | Toyobo Co Ltd | Transparent conductive laminated film, transparent conductive laminated sheet, and touch panel |
| CN102270074A (en) * | 2010-06-02 | 2011-12-07 | 群康科技(深圳)有限公司 | Electrode structure and manufacturing method thereof |
Non-Patent Citations (2)
| Title |
|---|
| 冯良恒 等: "《中国太阳能光伏进展》", 31 December 2006 * |
| 戴达煌 等: "《功能薄膜及其沉积制备技术》", 31 December 2012 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108762555A (en) * | 2018-05-21 | 2018-11-06 | 京东方科技集团股份有限公司 | Touch base plate and touch device |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI499960B (en) | 2015-09-11 |
| WO2014114211A1 (en) | 2014-07-31 |
| TW201430669A (en) | 2014-08-01 |
| CN103970317B (en) | 2017-09-12 |
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