CN103969467B - A kind of pressure resistance type MEMS high overload accelerometer - Google Patents
A kind of pressure resistance type MEMS high overload accelerometer Download PDFInfo
- Publication number
- CN103969467B CN103969467B CN201410030354.0A CN201410030354A CN103969467B CN 103969467 B CN103969467 B CN 103969467B CN 201410030354 A CN201410030354 A CN 201410030354A CN 103969467 B CN103969467 B CN 103969467B
- Authority
- CN
- China
- Prior art keywords
- girder
- micro
- accelerometer
- pressure resistance
- resistance type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Pressure Sensors (AREA)
Abstract
The invention discloses a kind of pressure resistance type MEMS high overload accelerometer, including frame, one group of girder, one group of micro-beam and mass；Described girder is located in frame, and all girders are connected with mass；Described micro-beam is located at girder side or both sides, the connection parallel with girder of micro-beam, and when micro-beam is located at girder side, whole arrangements of accelerometers is centrosymmetric, and when micro-beam is located at girder both sides, whole arrangements of accelerometers is holohedral symmetry.Structure will be simplified on one piece of silicon chip while micro-for master beam by the present invention, both the contradiction that high range high sensitivity is negative correlation had been overcome, in turn simplify technique, production in enormous quantities is possibly realized, eliminates beam by the design of buffer stopper simultaneously and directly connect caused corner with mass the technical problem that stress concentration phenomenon causes accelerometer to be easily damaged occurs.
Description
Technical field
The present invention relates to a kind of accelerometer, specifically, relate to one and take into account high resonant frequency and high sensitivity also simultaneously
And it is easy to the accelerometer of large-scale production.
Background technology
Mems accelerometer is widely used, and is used for example in automobile and other purposes.Use mems accelerometer
A field be global location purposes, in order to provide the standby of the motion of instruction institute use vehicle during short time interval
By information, in the time interval that these are short, satellite communication link temporarily interrupts.It will be appreciated, however, that this is only
The possible purposes of one of mems accelerometer can be used, and the present invention is not only restricted to this aspect.
Abroad, 7270A series piezoresistance type acceleration sensor [12] that U.S. ENDEVCO company produces. therein
7270A-200K range is 200000g, and fixing resonance frequency is a maximum of about of 1.2MHz, is to be currently known acceleration to pass
In sensor the highest.Business g value cantilever beam accelerometer [13] that Canada's alberta microelectronics center is developed.This sensing
Device can survey 100,000 g acceleration, and resonant frequency is better than 100kHz, no matter static state or at shock environment under, all can hold
[1] is impacted by the acceleration of 10000g.The range of MEMS high shock acceleration sensor is carried out typically 100,000 in China
About g.
The sensitivity of mems accelerometer and frequency range are negative correlation, and when sensitivity increases, resonant frequency reduces,
Vice versa.Therefore under conditions of ensureing upper frequency, the sensitivity of accelerometer to be improved as far as possible, the most again
The load that structure to be considered is born, optimizes the position of concentrated stress, and technique to be easy to makes, and becomes acceleration transducer
The subject matter of design.
Such as, four end-beam arrangement accelerometers of Northcentral University, as it is shown in figure 1, use most basic accelerometer principle
Realizing, range is less, it is impossible to bears high overload, and there will be obvious stress concentration phenomenon.For concentrated stress, in
The proposition that Beijing University is learned the thought of chamfering structure, after the turning of beam goes out to make inverted triangle prism, concentrated stress is reduced,
But do not eliminate.Trace it to its cause, be primarily due to direct turning and cause these positions except by moment of flexure, also having
The effect of moment of torsion, therefore stress is relatively big, and chamfering thought is not fully solved this problem.
Shanghai micro-system a kind of accelerometer, range 200000g, natural frequency 573kHz, sensitivity 0.502uV/g.
As in figure 2 it is shown, it uses Dual-layer girder construction, discuss the advantage that thick micro-beam combines, to natural frequency and sensitivity
Raising largely effective.Shortcoming is complex process, and batch production difficulty is relatively big, and silicon chip combined process difficult point is relatively big, stable
Property has a question.Secondly twin-spar construction is easily subject to the interference of horizontal deformation.
Summary of the invention
Goal of the invention: in order to overcome the deficiencies in the prior art, the present invention provides one to take into account high resonant frequency simultaneously
With high sensitivity and be easy to large-scale low-cost produce accelerometer.
Technical scheme: for solving above-mentioned technical problem, a kind of pressure resistance type MEMS high overload acceleration that the present invention provides
Meter, including frame, one group of girder, one group of micro-beam and mass；Described girder is located in frame, all girders and matter
Gauge block connects；Described micro-beam is located at girder side or both sides, and the connection parallel with girder of micro-beam, when micro-beam is located at girder one
During side, whole arrangements of accelerometers is centrosymmetric, and when micro-beam is located at girder both sides, whole arrangements of accelerometers is in entirely
Symmetrical.
Girder length of the present invention and thickness, support mass, reduces stress, improves natural frequency；Micro-beam is short and thin, and deformation is big,
Improving sensitivity, accelerometer is four end symmetric designs, so has the most steady on two degree of freedom of a plane
Qualitative, while the present invention improves natural frequency simultaneously, also improve sensitivity, and design for monolayer symmetrical structure,
Simple in construction, it is possible to realize low cost large-scale production.
Further, a groove, described micro-beam and mass and frame junction difference it are provided with between described micro-beam and girder
Being provided with a buffer stopper, buffer stopper side is the most trapezoidal, and groove causes buffer stopper to separate with girder；During large deformation, quality
Block is it has also been found that bend, especially adjoining edge, then be just respectively arranged with the moment of flexure of both direction on four angles (on a direction
Moment of flexure is exactly moment of torsion for other direction), this design of the present invention solves beam of the prior art directly and quality
Block connects caused corner and stress concentration phenomenon occurs, causes device to be easily damaged, increases buffer stopper so that beam deformation
Time only be there is no moment of torsion effect by Moment yet, eliminate stress and concentrate.
Further, the thickness of described buffer stopper is more than the thickness of micro-beam.
Further, described girder thickness and length are more than thickness and the length of micro-beam.
Further, described frame is square, and the quantity of described girder is 4N, the quantity of micro-beam be 4N or
8N is individual, the integer of N >=1, and the quantity of every edge-beam is N number of, and the quantity of micro-beam is N or 2N.
Further, for the ease of large-scale production and whole structure, the thickness of described mass is more than girder thickness, matter
In 54.74 degree at gauge block and girder joint face.
Further, for the ease of large-scale production and whole structure, the thickness of described frame is more than girder thickness, frame
With at girder joint face in 54.74 degree.
Further, described frame respectively and surrounds some dead slots between girder, micro-beam.
Further, described accelerometer is tossed about in plane, and the groove in front is provided with the most corresponding groove.
Beneficial effect: in terms of existing technologies, structure is simplified to one piece by while micro-for master beam to the present invention by the present invention
On silicon chip, both overcame the contradiction that high range high sensitivity is negative correlation, in turn simplify technique so that produce in enormous quantities into
For possible, eliminate beam by the design of buffer stopper simultaneously and directly occur that stress is concentrated with the caused corner of mass connection
Phenomenon causes the technical problem that accelerometer is easily damaged.
Accompanying drawing explanation
Fig. 1 and Fig. 2 is the structural representation of prior art.
Fig. 3 is the inverse layer structure schematic diagram of the present invention.
Fig. 4 is Facad structure schematic diagram of the present invention.
Fig. 5 and Fig. 6 is the present invention positive structure partial enlarged drawing.
Fig. 7 is the working effect figure of the present invention.
Fig. 8 is to add inverted triangle structural simulation figure in beam corner in prior art.
Fig. 9 is to add in the present invention to extend buffer block structure schematic diagram.
Figure 10 to Figure 12 be respectively not added with inverted triangle, add inverted triangle, add extend buffer stopper distribution of force figure.
Figure 13 is the line angle figure of the present invention.
Figure 14 is Section A-A displacement diagram of the present invention.
Figure 15 is Section A-A stress diagram of the present invention.
Figure 16 is the design sketch by Y positive direction acceleration.
Figure 17 is the design sketch by X-direction acceleration.
Figure 18 is Figure 14 Yu Figure 15 corresponding relation figure.
Detailed description of the invention
Below in conjunction with the accompanying drawings the present invention is further described.
As shown in Figures 3 to 6, a kind of pressure resistance type MEMS high overload accelerometer, including 4,4, square frame
1,4 micro-beams 2 of girder and mass 3；Described girder 1 is located in square frame 4, all girders 1 and quality
Block 3 connects；Described micro-beam 2 is located at girder 1 side, the connection parallel with girder 1 of micro-beam 2, whole arrangements of accelerometers
It is centrosymmetric；A groove 9, described micro-beam 2 and mass 3 and frame 4 it is provided with between described micro-beam 2 and girder 1
Junction is respectively equipped with a buffer stopper 8, and buffer stopper 8 side is the most trapezoidal, and groove 9 causes buffer stopper 8 and girder 1
Separate；The thickness of described buffer stopper 8 is more than the thickness of micro-beam 2；Described girder 1 thickness and length are more than the thickness of micro-beam 2
Degree and length；The thickness of described mass 3 is more than girder 1 thickness, in 54.74 at mass 3 and girder 1 joint face
Degree；The thickness of described frame 4 is more than girder 1 thickness, in 54.74 degree at frame 4 and girder 1 joint face；Described limit
Frame 4 respectively and surrounds some dead slots 6 between girder 1, micro-beam 2；Described accelerometer is tossed about in plane, in front
The most corresponding groove 7 it is provided with at groove 9.
Girder 1 of the present invention is long and thick, supports mass 3, reduces stress, improves natural frequency；Micro-beam 2 is short and thin,
Deformation is big, improves sensitivity, and accelerometer is four end symmetric designs, so has on two degree of freedom of a plane
Preferably stability, while the present invention improves natural frequency simultaneously, also improves sensitivity, and is monolayer symmetrical junction
Structure designs, simple in construction, it is possible to realize low cost large-scale production, eliminate beam by the design of buffer stopper 8 straight simultaneously
Connect, with mass 3 connection caused corner, the technical problem that stress concentration phenomenon causes accelerometer to be easily damaged occurs.
For the present invention, ANSYS simulation software is used to carry out static analysis, model analysis, the transient analysis, locally
Stress is sampled, sensitivity simulation calculation.
As shown in Figure 7 when receiving acceleration, mass is subjected to displacement so that the beam supporting it deforms upon；Girder shape
Becoming apparent less than micro-beam, stress the least (in figure, color is the most shallow shows that at this, stress is the biggest), it is achieved thereby that girder holds
By acceleration, the expected design of micro-beam detection acceleration.As long as varistor, structure are placed in the position maximum in micro-beam deformation
Become bridge circuit, i.e. can detect that acceleration.
Fig. 8 and Fig. 9 is to add inverted triangle structure in beam corner in prior art to show with buffer block structure in the present invention respectively
Be intended to contrast, by carrying out force analysis, draw respectively Figure 10 to Figure 12 be respectively not added with inverted triangle, add inverted triangle,
Adding the distribution of force figure extending buffer stopper, in figure, color the most shallow expression stress is the biggest, and in each figure, the depth is relative,
In i.e. every figure, shallow portion is stress maximum, but these three maximum stress differing, only with respect to every figure it is
Maximum stress, so color is the most shallow, light color district of Figure 11 corner (place that stress is concentrated) reduces a lot than Figure 10,
And Figure 12 corner is entirely without this concentration phenomenon.In sum, draw from Figure 10～12 Figure 10 is not added with down three
Angle stress concentration phenomenon is it will be evident that stress is concentrated and alleviated but do not eliminate after corner adds inverted triangle, and Figure 12
Middle addition adds in the structure extending buffer stopper, essentially eliminates stress concentration phenomenon.
In performance maximally related static analysis part, design sketch when Figure 16 is to apply 200,000 g, stress distribution is good.
The cross section shape strain and stress simultaneously observed (such as the Section A-A of Figure 13) on micro-beam and girder is respectively such as Figure 14 and Tu
15.On Figure 18 middle section, the corresponding relation vertical line of the shape strain and stress of several points draws, and turns right from left and right and arranges successively
Sequence, 1,2 is the point that on micro-beam, degree of crook is maximum, and therefore stress correspondence is maximum, 5,6 on girder, in like manner, only
But girder deformation is little, and stress is not as good as 1, and 2 is big, and 3,4 on mass.
The actual effect stress of silicon is 1GPa, but in engineering general select 0.3 safety coefficient, i.e. think allowable stress
For 300MPa.As long as the maximum stress on device is less than 300MPa, it is considered as device and can bear load, be
It is not damaged.And the maximum stress of device is generally present in turning or the bigger place of deformation, is divided by static(al)
The result of analysis is not it will be seen that the stress of corner the most have impact on.Maximum stress is basically at beam end deformation,
Maximum 63.3MPa, is far smaller than allowable stress, and therefore under this load, device is entirely normal work.200000g
Acceleration under, the displacement of mass is 0.36 μm, is also less than gap with bottom surface.Increased acceleration, makes
When big stress reaches 300MPa, acceleration now is that 95g exceeds 200000g and is up to the surplus of 750000g.Quality
Block displacement is 1.71 μm, also meets requirement.The longitudinal sensitivity that simulation calculates is about 0.862 μ V/g.
In order to emulate horizontal ability to bear, it is assumed that laterally by the acceleration of 1000g, because structure is symmetrical, so
As a example by X-direction.Simulation result such as Figure 17 shows, maximum stress is 134.5MPa, displacement less than 0.5nm, so,
The anti-transverse acceleration of acceleration transducer is functional.
The above is only the preferred embodiment of the present invention, it should be pointed out that: for those skilled in the art
For, under the premise without departing from the principles of the invention, it is also possible to make some improvements and modifications, these improvements and modifications are also
Should be regarded as protection scope of the present invention.
Claims (9)
1. a pressure resistance type MEMS high overload accelerometer, it is characterised in that: include frame, one group of girder, one group
Micro-beam and mass；Described girder is located in frame, and all girders are connected with mass；Described micro-beam is located at girder one
Side or both sides, the connection parallel with girder of micro-beam, when micro-beam is located at girder side, whole arrangements of accelerometers is center
Symmetry, when micro-beam is located at girder both sides, whole arrangements of accelerometers is holohedral symmetry；It is provided with between described micro-beam and girder
One groove, micro-beam is respectively equipped with a buffer stopper with mass and frame junction, and buffer stopper side is the most trapezoidal.
Pressure resistance type MEMS high overload accelerometer the most according to claim 1, it is characterised in that: described buffering
The thickness of block is more than the thickness of micro-beam.
Pressure resistance type MEMS high overload accelerometer the most according to claim 1, it is characterised in that: described girder
Thickness and length are more than thickness and the length of micro-beam.
Pressure resistance type MEMS high overload accelerometer the most according to claim 1, it is characterised in that: described frame
In square.
Pressure resistance type MEMS high overload accelerometer the most according to claim 4, it is characterised in that: described girder
Quantity be 4N, the quantity of micro-beam is 4N or 8N, the integer of N >=1, and the quantity of every edge-beam is N
Individual, the quantity of micro-beam is N or 2N.
Pressure resistance type MEMS high overload accelerometer the most according to claim 1, it is characterised in that: described quality
The thickness of block is more than at girder thickness, mass and girder joint face and frame plane is 54.74 degree.
Pressure resistance type MEMS high overload accelerometer the most according to claim 1, it is characterised in that: described frame
Thickness more than girder thickness, be 54.74 degree with frame plane at frame and girder joint face, described right-angled trapezium oblique
Angle, face and frame plane are 54.74 degree.
Pressure resistance type MEMS high overload accelerometer the most according to claim 1, it is characterised in that: described frame
Respectively and surround some dead slots between girder, micro-beam.
Pressure resistance type MEMS high overload accelerometer the most according to claim 8, it is characterised in that: described acceleration
Degree meter is tossed about in plane, and the groove in front is provided with the most corresponding groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410030354.0A CN103969467B (en) | 2014-01-22 | 2014-01-22 | A kind of pressure resistance type MEMS high overload accelerometer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410030354.0A CN103969467B (en) | 2014-01-22 | 2014-01-22 | A kind of pressure resistance type MEMS high overload accelerometer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103969467A CN103969467A (en) | 2014-08-06 |
| CN103969467B true CN103969467B (en) | 2016-10-26 |
Family
ID=51239214
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410030354.0A Active CN103969467B (en) | 2014-01-22 | 2014-01-22 | A kind of pressure resistance type MEMS high overload accelerometer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103969467B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107643424B (en) * | 2017-09-21 | 2020-03-17 | 中国电子科技集团公司第四十九研究所 | Piezoresistive MEMS acceleration chip and manufacturing method thereof |
| CN109945965A (en) * | 2019-03-27 | 2019-06-28 | 国网上海市电力公司 | The arm-type sensitive diaphragm of optical fiber EFPI ultrasonic sensor supporting beam |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2438607Y (en) * | 2000-08-25 | 2001-07-11 | 华北工学院微米纳米技术研究中心 | Integrated silicon micro-resistor accelerating sensor |
| CN101118250A (en) * | 2007-09-13 | 2008-02-06 | 中国电子科技集团公司第十三研究所 | Silicon MEMS piezoresistance type acceleration sensor |
| CN102298075A (en) * | 2011-05-23 | 2011-12-28 | 西安交通大学 | Acceleration sensor chip with compound multiple-beam structure and manufacturing method thereof |
| CN102435776A (en) * | 2011-10-20 | 2012-05-02 | 中北大学 | Single-chip integrated eight-beam-arm triaxial accelerometer |
| CN102928622A (en) * | 2012-10-17 | 2013-02-13 | 中北大学 | Beam island tower shaped piezoresistive type three-axis micro-electro-mechanical system (MEMS) high-range acceleration sensor array |
| CN103335892A (en) * | 2013-06-13 | 2013-10-02 | 中国人民解放军国防科学技术大学 | Off-chip bending test microstructure for multiple testing beams |
| CN103364585A (en) * | 2013-07-19 | 2013-10-23 | 中北大学 | Novel micro-accelerometer based on mesoscopic piezoresistive effect |
-
2014
- 2014-01-22 CN CN201410030354.0A patent/CN103969467B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2438607Y (en) * | 2000-08-25 | 2001-07-11 | 华北工学院微米纳米技术研究中心 | Integrated silicon micro-resistor accelerating sensor |
| CN101118250A (en) * | 2007-09-13 | 2008-02-06 | 中国电子科技集团公司第十三研究所 | Silicon MEMS piezoresistance type acceleration sensor |
| CN102298075A (en) * | 2011-05-23 | 2011-12-28 | 西安交通大学 | Acceleration sensor chip with compound multiple-beam structure and manufacturing method thereof |
| CN102435776A (en) * | 2011-10-20 | 2012-05-02 | 中北大学 | Single-chip integrated eight-beam-arm triaxial accelerometer |
| CN102928622A (en) * | 2012-10-17 | 2013-02-13 | 中北大学 | Beam island tower shaped piezoresistive type three-axis micro-electro-mechanical system (MEMS) high-range acceleration sensor array |
| CN103335892A (en) * | 2013-06-13 | 2013-10-02 | 中国人民解放军国防科学技术大学 | Off-chip bending test microstructure for multiple testing beams |
| CN103364585A (en) * | 2013-07-19 | 2013-10-23 | 中北大学 | Novel micro-accelerometer based on mesoscopic piezoresistive effect |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103969467A (en) | 2014-08-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105137120B (en) | A kind of V-beam torsional pendulum type single shaft micro-mechanical accelerometer and preparation method thereof | |
| CN101118250B (en) | Silicon MEMS piezoresistance type acceleration sensor | |
| CN203825034U (en) | Z-axis capacitance micro mechanical accelerometer | |
| CN100437117C (en) | Composite beam piezoresistive accelerometer | |
| CN104698222A (en) | Tri-axial monolithic integration resonant capacitance type micro-accelerometer and machining method thereof | |
| CN203977296U (en) | A kind of device for bridge equal proportion supertronic integral jacking | |
| CN103969467B (en) | A kind of pressure resistance type MEMS high overload accelerometer | |
| CN102647657B (en) | Monolithic integrated MEMS (Micro-electromechanical Systems) piezoresistive ultrasonic sensor | |
| CN105352488A (en) | Variable area capacitive-type bimodal optimized tuning-fork-type micromechanical gyroscope | |
| CN101504426B (en) | Comb condenser type dual-spindle accelerometer | |
| CN105021846A (en) | Six-axis integrated miniature acceleration sensor and manufacturing method therefor | |
| CN101118249A (en) | Piezoresistance type accelerometer with high g values | |
| CN102680738B (en) | Transverse-interference-resistant silicon nanobelt giant-piezoresistive-effect micro-accelerometer | |
| CN201852851U (en) | Framework type capacitance silicon micromechanical accelerometer | |
| CN104215422B (en) | A kind of dynamometry compensation system for vehicle-bridge system wind tunnel test under vehicle situation of movement | |
| CN102175890A (en) | Sandwich type translational closed-loop silicon-micro-accelerometer | |
| CN105841857B (en) | A kind of parallel five-dimensional force sensor | |
| CN109001490A (en) | High-sensitivity torsional pendulum type silicon micro-accelerometer and preparation method thereof | |
| CN204255978U (en) | A kind of split type difference silicon micro-resonance type accelerometer | |
| CN106525017B (en) | Micromechanical gyroscope resistant to environmental vibrations | |
| CN203203668U (en) | A cantilever beam weighing sensor with bi-symmetric cantilevers | |
| CN104535797A (en) | Single-piece double-shaft butterfly wing type micromechanical accelerometer | |
| CN102401841A (en) | Multi-cantilever acceleration transducer | |
| AU2019422245B2 (en) | Crossbeam for measuring deformation velocities of surface of material under dynamic loads | |
| CN107271720A (en) | Eight beam 3-axis acceleration sensors of low inter-axis coupling degree |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |