CN103965913A - Etching paste for etching ITO conductive film - Google Patents
Etching paste for etching ITO conductive film Download PDFInfo
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- CN103965913A CN103965913A CN201310206813.1A CN201310206813A CN103965913A CN 103965913 A CN103965913 A CN 103965913A CN 201310206813 A CN201310206813 A CN 201310206813A CN 103965913 A CN103965913 A CN 103965913A
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- etching
- indium tin
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- paste
- etching paste
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- 238000005530 etching Methods 0.000 title claims abstract description 83
- 239000002734 clay mineral Substances 0.000 claims abstract description 25
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 18
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000002253 acid Substances 0.000 claims abstract description 8
- 239000002245 particle Substances 0.000 claims abstract description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 4
- 230000003647 oxidation Effects 0.000 claims description 26
- 238000007254 oxidation reaction Methods 0.000 claims description 26
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims description 25
- 239000000049 pigment Substances 0.000 claims description 14
- 239000003795 chemical substances by application Substances 0.000 claims description 13
- 239000006185 dispersion Substances 0.000 claims description 13
- 150000004760 silicates Chemical class 0.000 claims description 13
- 239000002904 solvent Substances 0.000 claims description 12
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 claims description 4
- 239000005995 Aluminium silicate Substances 0.000 claims description 3
- 235000012211 aluminium silicate Nutrition 0.000 claims description 3
- 229910052500 inorganic mineral Inorganic materials 0.000 claims description 3
- 239000011707 mineral Substances 0.000 claims description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract description 13
- 230000008901 benefit Effects 0.000 abstract description 7
- 238000002360 preparation method Methods 0.000 abstract description 3
- 150000007522 mineralic acids Chemical class 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 16
- 238000000034 method Methods 0.000 description 9
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 239000006229 carbon black Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 4
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 4
- 229920005646 polycarboxylate Polymers 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- 235000000177 Indigofera tinctoria Nutrition 0.000 description 2
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 2
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical compound N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 2
- DPDMMXDBJGCCQC-UHFFFAOYSA-N [Na].[Cl] Chemical compound [Na].[Cl] DPDMMXDBJGCCQC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Chemical compound CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 2
- 150000005125 dioxazines Chemical class 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 229940097275 indigo Drugs 0.000 description 2
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 description 2
- -1 indium tin oxide compound Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- NMRPBPVERJPACX-UHFFFAOYSA-N (3S)-octan-3-ol Natural products CCCCCC(O)CC NMRPBPVERJPACX-UHFFFAOYSA-N 0.000 description 1
- 229940058015 1,3-butylene glycol Drugs 0.000 description 1
- WGYZMNBUZFHYRX-UHFFFAOYSA-N 1-(1-methoxypropan-2-yloxy)propan-2-ol Chemical compound COCC(C)OCC(C)O WGYZMNBUZFHYRX-UHFFFAOYSA-N 0.000 description 1
- WOFPPJOZXUTRAU-UHFFFAOYSA-N 2-Ethyl-1-hexanol Natural products CCCCC(O)CCC WOFPPJOZXUTRAU-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- YIWUKEYIRIRTPP-UHFFFAOYSA-N 2-ethylhexan-1-ol Chemical compound CCCCC(CC)CO YIWUKEYIRIRTPP-UHFFFAOYSA-N 0.000 description 1
- ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 2-octanone Chemical compound CCCCCCC(C)=O ZPVFWPFBNIEHGJ-UHFFFAOYSA-N 0.000 description 1
- CVYANEKTPUSMIM-UHFFFAOYSA-N 4,4,6,6-tetramethylnonan-5-one Chemical compound CCCC(C)(C)C(=O)C(C)(C)CCC CVYANEKTPUSMIM-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 1
- ALQSHHUCVQOPAS-UHFFFAOYSA-N Pentane-1,5-diol Chemical compound OCCCCCO ALQSHHUCVQOPAS-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- XAIKOVRFTSBNNU-UHFFFAOYSA-N anthracene-9,10-dione Chemical class C1=CC=C2C(=O)C3=CC=CC=C3C(=O)C2=C1.C1=CC=C2C(=O)C3=CC=CC=C3C(=O)C2=C1 XAIKOVRFTSBNNU-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 235000019437 butane-1,3-diol Nutrition 0.000 description 1
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- AQEFLFZSWDEAIP-UHFFFAOYSA-N di-tert-butyl ether Chemical compound CC(C)(C)OC(C)(C)C AQEFLFZSWDEAIP-UHFFFAOYSA-N 0.000 description 1
- GUJOJGAPFQRJSV-UHFFFAOYSA-N dialuminum;dioxosilane;oxygen(2-);hydrate Chemical compound O.[O-2].[O-2].[O-2].[Al+3].[Al+3].O=[Si]=O.O=[Si]=O.O=[Si]=O.O=[Si]=O GUJOJGAPFQRJSV-UHFFFAOYSA-N 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- 229910052622 kaolinite Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052901 montmorillonite Inorganic materials 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 description 1
Abstract
An etching paste for etching an ITO conductive film contains an acid and 25 to 45wt% of a silicate clay mineral. The acid includes at least one inorganic acid consisting of the following group: phosphoric acid, hydrochloric acid, sulfuric acid and nitric acid. The silicate-based clay mineral has an average particle size ranging from 0.65 μm to 8 μm. The etching paste has the advantages of easy preparation, better printing property, good storage stability and low cost by using the silicate clay mineral and the matching of the content and the particle size, and can effectively etch the indium tin oxide conductive film when etching the indium tin oxide conductive film so as to form the required patterned indium tin oxide conductive film.
Description
Technical field
The present invention relates to a kind of is the etching paste of conducting film for etching oxidation indium tin, particularly relates to a kind of etching paste that comprises silicate clay mineral.
Background technology
The mode that current formation patterning indium tin oxide is conducting film has wet etching and dry etching.This wet etching is to adopt photoresistance etching method, and this dry etching is to adopt electric paste etching method.Wherein, more extensively use wet etching.Though it is conducting film that this photoresistance etching method can provide the patterning indium tin oxide of better resolution, but this photoresistance etching method processing procedure is complicated and consuming time, does not meet dealer's cost benefit.
The open case of TaiWan, China TW200827431 patent disclose a kind of for etching oxidation type, transparent and conductive surface can print media.This can print media comprise phosphoric acid, at least one solvent, relative grain size between 20nm to 80nm and BET specific surface area graphite and/or carbon black, thickening material and the additive between 40 to 100 meters squared per gram.This can print media can be used to etching indium tin oxide compound.But this can print media need use nano level graphite and/or carbon black, make that the dispersiveness that this can print media is not good, stability in storage is not good, and cost is high.Meanwhile, carbon black is because of lightweight, and process for preparation easily produces dust problem.
Known through above-mentioned explanation, provide and there is stability in storage and the low etching paste of cost, be the problem that this technical field person skilled can break through again.
Summary of the invention
The object of the present invention is to provide a kind ofly there is printing preferably, stability in storage is good and cost is low is the etching paste of conducting film for etching oxidation indium tin.
The present invention is the etching paste of conducting film for etching oxidation indium tin, comprises:
Acid, comprises and being selected from: the mineral acid that phosphoric acid, hydrochloric acid, sulfuric acid, nitric acid or their arbitrary combination form; And
The silicate clay mineral (silicate-basedclayminerals) of 25wt% to 45wt%; Wherein, the average particle size range of this silicate clay mineral is 0.65 μ m to 8 μ m.
Of the present invention is the etching paste of conducting film for etching oxidation indium tin, and this silicate clay mineral is to select certainly in polynite or kaolin.
Of the present invention is the etching paste of conducting film for etching oxidation indium tin, also comprises dispersion agent.
Of the present invention is the etching paste of conducting film for etching oxidation indium tin, and taking the total amount of this silicate clay mineral as 100 weight parts, the content range of this dispersion agent is 5 weight part to 15 weight parts.
Of the present invention is the etching paste of conducting film for etching oxidation indium tin, also comprises solvent.
Of the present invention is the etching paste of conducting film for etching oxidation indium tin, and taking the total amount of this silicate clay mineral as 100 weight parts, the content range of this solvent is 57 weight part to 145 weight parts.
Of the present invention is the etching paste of conducting film for etching oxidation indium tin, also comprises pigment.
Beneficial effect of the present invention is: the present invention is by using the collocation of silicate clay mineral and content and particle diameter, make that this etching paste has advantages of preferably printing, stability in storage is good and cost is low, and in the time that etching oxidation indium tin is conducting film, etching oxidation indium tin is conducting film effectively, and the patterning indium tin oxide that then forms institute's demand is conducting film.
Embodiment
The present invention is the etching paste of conducting film for etching oxidation indium tin, comprises:
Acid, comprises and being selected from: the mineral acid that phosphoric acid, hydrochloric acid, sulfuric acid, nitric acid or their arbitrary combination form; And
The silicate clay mineral of 25wt% to 45wt%;
Wherein, the average particle size range of this silicate clay mineral is 0.65 μ m to 8 μ m.
Preferably, this silicate clay mineral is to select certainly in polynite (montmorillonite) or kaolin (kaolinite).
For making this silicate clay mineral have better dispersiveness, preferably, this is used for etching oxidation indium tin is that the etching paste of conducting film also comprises dispersion agent.This dispersion agent can be used alone or as a mixture, and this dispersion agent is such as but not limited to polycarboxylate system's dispersion agent or polyacrylic polymer dispersant etc.This polycarboxylate is such as but not limited to polycarboxylate sodium or poly carboxylic acid ammonium salt etc.This polycarboxylate system's dispersion agent is such as but not limited to model DISPERBYK-190 (BYK system).This polyacrylic acid based polymer is such as but not limited to acrylic acid-methacrylate copolymer.
Preferably, taking the total amount of this silicate clay mineral as 100 weight parts, the content range of this dispersion agent is 5 weight part to 15 weight parts.
Preferably, this to be used for etching oxidation indium tin be that the etching paste of conducting film also comprises solvent.
This solvent can coordinate successive process temperature, then can be removed.This solvent can be used alone or as a mixture, and this solvent is such as but not limited to water, Virahol, glycol ether, dipropylene glycol, polyethylene glycols, 1,2-propylene glycol, 1,4-butyleneglycol, 1,3-butyleneglycol, glycerine, 1,5-pentanediol, 2-ethyl-1-hexanol, phenyl methyl ketone, methyl-methyl-n-butyl ketone, methyln-hexyl ketone, 4-hydroxy-4-methyl-2-pentanone, 1-methyl-2-Pyrrolizidine ketone, ethylene glycol monobutyl ether, ethylene glycol monomethyl ether, triglycol monomethyl ether, diglycol monotertiary butyl ether, or DPGME etc.
Preferably, taking the total amount of this silicate clay mineral as 100 weight parts, the content range of this solvent is 57 weight part to 145 weight parts.
Preferably, this to be used for etching oxidation indium tin be that the etching paste of conducting film also comprises pigment.This pigment can be used alone or as a mixture, and this pigment is such as but not limited to azo (azo) series pigments, phthalocyanine (phthalocyanine) series pigments, anthraquinone (anthraquinone) series pigments, indigo (indigo) series pigments, quinacridone (quinacridone) series pigments, dioxazines (dioxazine) series pigments, or fragrant methane (arylmethane) series pigments etc.
The present invention will be described further with regard to following examples, but will be appreciated that, described embodiment is only for illustrating use, and should not be interpreted as restriction of the invention process.
< embodiment 1>
Use blade paddle mixer to mix 1-methyl-2-Pyrrolizidine ketone (solvent) of the deionized water of 50 grams and 100 grams, then, add the DISPERBYK-190 dispersion agent of 15 grams and the phthalocyanine pigment of 1 gram, and continue to be uniformly mixed, then, add the phosphoric acid of 150 grams, wait to be uniformly mixed, the polynite that is 8 μ m by 105.5 grams of median sizes adds, and stirs two hours with the rotating speed of 200rpm.
< embodiment 2 to 5 and comparative example 1 are to 3>
Embodiment 2 to 5 and comparative example 1 to 3 are respectively to make etching paste with the step identical with embodiment 1, and different places are: change the usage quantity of silicate clay mineral and the median size of silicate clay mineral, and as shown in table 1.
< comparative example 4>
Use blade paddle mixer to mix 1-methyl-2-Pyrrolizidine ketone of the deionized water of 50 grams and 100 grams, then, add the DISPERBYK-190 dispersion agent of 15 grams, and continue to be uniformly mixed, then, add the phosphoric acid of 150 grams, wait to be uniformly mixed, the carbon black that is 16nm by 170 grams of median sizes adds, and stirs two hours with the rotating speed of 200rpm.
< comparative example 5>
Use blade paddle mixer to mix 1-methyl-2-Pyrrolizidine ketone of the deionized water of 50 grams and 100 grams, then, add the DISPERBYK-190 dispersion agent of 15 grams and the phthalocyanine pigment of 1 gram, and continue to be uniformly mixed, then, add the phosphoric acid of 150 grams, wait to be uniformly mixed, the sodium-chlor that is 2 μ m by 170 grams of median sizes adds, and stirs two hours with the rotating speed of 200rpm.
< test item >
Viscosity measurement: with Brookfield viscosmeter (label: Brookfield; Model: HBDV-IPrime) be under 25 DEG C and the speed of rotation condition that is 30rpm in temperature, measure the viscosity of the etching paste of described embodiment 1 to 5 and comparative example 1 to 5, unit is cps.
Printing: with 325 mesh Stainless Steel Cloths, the etching paste of described embodiment 1 to 5 and comparative example 1 to 5 is printed on a nesa coating, then, removes this 325 mesh Stainless Steel Cloth, and with opticmicroscope (label: Olympus; Model: BX51) observe printed wiring and whether meet the mesh size of 325 mesh Stainless Steel Cloths, its evaluation method: zero: printed wiring meets mesh size; X: printed wiring does not meet mesh size, and extends out phenomenon.
Stability in storage: the etching paste of embodiment 1 to 5 and comparative example 1 to 5 is placed in respectively to the environment one month of 26 DEG C, observes etching paste and whether solidify, its evaluation method: zero: do not solidify; X: solidify.
Etching: the etching paste of embodiment 1 to 5 and comparative example 1 to 5 is printed on the base material that a surface has indium tin oxide conductive film, in 120 DEG C of bakings 5 minutes, then, and cleans with water, use unit area impedance meter (label: Mitsubishi; Model: MCP-T370) measure etching place whether have resistance value, its evaluation method: zero: have resistance value; X: no resistance value.
Cleaning: the etching paste of embodiment 1 to 5 and comparative example 1 to 5 is printed on the base material that a surface has indium tin oxide conductive film, at 120 DEG C, toasts after 10 to 15 minutes, and taking discharge as 2.5kg/cm
2clean, observe and whether have etching paste residual, its evaluation method: zero: noresidue; X: residual.
Table 1
"--": represent not add; "-": expression cannot measure.
From the experimental data of table 1, the polynite that the etching paste of embodiment 1 to 5 comprises 25wt% to 45wt%, there is preferably printing and stability in storage, simultaneously, can be applied on indium tin oxide conductive film and carry out etch processes, make the patterning indium tin oxide conducting film of indium tin oxide conductive film formation institute demand, moreover, etching paste easy cleaning of the present invention, can not remain on patterning indium tin oxide conducting film.
Comparative example 1, comparative example 2 and comparative example 3 use respectively polynite, the polynite of 20wt% and the polynite of 50wt% of 10wt%, and the etching paste printing, stability in storage and the etching that form are neither good, do not meet dealer's utilization benefit.
From the experimental result of comparative example 4, the etching paste of comparative example 4 uses nano level carbon black, and its printing, stability in storage and etching are neither good, does not meet dealer's utilization benefit.
From the experimental result of comparative example 5, the etching paste of comparative example 5 uses the sodium-chlor of 35wt% to arrange in pairs or groups with phosphoric acid, can cause viscosity too high, need add again solvent and reduce viscosity, but this way can cause concentration excessively rare, the usage quantity competence exertion etch effect that makes to increase etching paste, does not meet dealer's utilization benefit.
In sum, the present invention is by using silicate clay mineral, and the content of silicate clay mineral and the collocation of particle diameter that use, make this etching paste have advantages of easy preparation, preferably printing, stability in storage is good and cost is low, and in the time that etching oxidation indium tin is conducting film, etching oxidation indium tin is conducting film effectively, and the patterning indium tin oxide that then forms institute's demand is conducting film, so really can reach object of the present invention.
Claims (7)
1. be an etching paste for conducting film for etching oxidation indium tin, it is characterized in that comprising:
Acid, comprises and being selected from: the mineral acid that phosphoric acid, hydrochloric acid, sulfuric acid, nitric acid or their arbitrary combination form; And
The silicate clay mineral of 25wt% to 45wt%; Wherein, the average particle size range of this silicate clay mineral is 0.65 μ m to 8 μ m.
2. according to claim 1 is the etching paste of conducting film for etching oxidation indium tin, it is characterized in that: this silicate clay mineral is to select certainly in polynite or kaolin.
3. according to claim 1 is the etching paste of conducting film for etching oxidation indium tin, it is characterized in that: this etching paste also comprises dispersion agent.
4. according to claim 3 is the etching paste of conducting film for etching oxidation indium tin, it is characterized in that: taking the total amount of this silicate clay mineral as 100 weight parts, the content range of this dispersion agent is 5 weight part to 15 weight parts.
5. according to claim 3 is the etching paste of conducting film for etching oxidation indium tin, it is characterized in that: this etching paste also comprises solvent.
6. according to claim 5 is the etching paste of conducting film for etching oxidation indium tin, it is characterized in that: taking the total amount of this silicate clay mineral as 100 weight parts, the content range of this solvent is 57 weight part to 145 weight parts.
7. according to claim 5 is the etching paste of conducting film for etching oxidation indium tin, it is characterized in that: this etching paste also comprises pigment.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW102103752 | 2013-01-31 | ||
| TW102103752A TWI534247B (en) | 2013-01-31 | 2013-01-31 | An etch paste for etching an indium tin oxide conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103965913A true CN103965913A (en) | 2014-08-06 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310206813.1A Pending CN103965913A (en) | 2013-01-31 | 2013-05-29 | Etching paste for etching ITO conductive film |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN103965913A (en) |
| TW (1) | TWI534247B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106701085A (en) * | 2016-12-28 | 2017-05-24 | 杭州格林达化学有限公司 | ITO (Indium Tin Oxide) reworking etching solution and preparation method of ITO reworking etching solution |
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| WO2000034961A1 (en) * | 1998-12-10 | 2000-06-15 | International Business Machines Corporation | Method for forming transparent conductive film by using chemically amplified resist |
| CN1274869A (en) * | 1999-05-20 | 2000-11-29 | 爱克法－格法特有限公司 | Method for printing pattern on conductive polymer coating |
| CN101228097A (en) * | 2005-07-25 | 2008-07-23 | 默克专利有限公司 | Etching media for oxidic, transparent, conductive layers |
| CN101550341A (en) * | 2009-05-12 | 2009-10-07 | 西安宝莱特光电科技有限公司 | Etching solution compound for etching pattern of ITO conductive film |
| WO2012081768A1 (en) * | 2010-12-15 | 2012-06-21 | 제일모직 주식회사 | Etching paste, a production method therefor and a pattern forming method using the same |
-
2013
- 2013-01-31 TW TW102103752A patent/TWI534247B/en not_active IP Right Cessation
- 2013-05-29 CN CN201310206813.1A patent/CN103965913A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3479237A (en) * | 1966-04-08 | 1969-11-18 | Bell Telephone Labor Inc | Etch masks on semiconductor surfaces |
| WO2000034961A1 (en) * | 1998-12-10 | 2000-06-15 | International Business Machines Corporation | Method for forming transparent conductive film by using chemically amplified resist |
| CN1274869A (en) * | 1999-05-20 | 2000-11-29 | 爱克法－格法特有限公司 | Method for printing pattern on conductive polymer coating |
| CN101228097A (en) * | 2005-07-25 | 2008-07-23 | 默克专利有限公司 | Etching media for oxidic, transparent, conductive layers |
| CN101550341A (en) * | 2009-05-12 | 2009-10-07 | 西安宝莱特光电科技有限公司 | Etching solution compound for etching pattern of ITO conductive film |
| WO2012081768A1 (en) * | 2010-12-15 | 2012-06-21 | 제일모직 주식회사 | Etching paste, a production method therefor and a pattern forming method using the same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106701085A (en) * | 2016-12-28 | 2017-05-24 | 杭州格林达化学有限公司 | ITO (Indium Tin Oxide) reworking etching solution and preparation method of ITO reworking etching solution |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI534247B (en) | 2016-05-21 |
| TW201430105A (en) | 2014-08-01 |
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