CN103956535B - Can bear the X-band high-speed switch of high-average power - Google Patents

Can bear the X-band high-speed switch of high-average power Download PDF

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Publication number
CN103956535B
CN103956535B CN201410125937.1A CN201410125937A CN103956535B CN 103956535 B CN103956535 B CN 103956535B CN 201410125937 A CN201410125937 A CN 201410125937A CN 103956535 B CN103956535 B CN 103956535B
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China
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power
ripple
speed switch
channel layer
outlet
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Expired - Fee Related
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CN201410125937.1A
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CN103956535A (en
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佟义贞
马锋
石苗苗
李红芳
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Beijing kailite Electronic Technology Development Co., Ltd.
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LAISHUI LAICI KAILITE MAGNETIC INDUSTRY Co Ltd
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Abstract

The present invention discloses a kind of X-band high-speed switch that can bear high-average power, comprises power divider, high power high-speed switch assembly, power combiner and high power load; The port number of ripple that the port number of the ripple that power divider separates and power combiner will be synthetic is identical with the number of plies of the channel layer of even level; In the microwave import of shell, be fixed with power divider, in microwave outlet, be fixed with power combiner, on load fixing port, be fixed with high power load; In each channel layer, be provided with high power high-speed switch; High power high-speed switch comprises T-shaped waveguide junction, mill star oxysome, pottery coupling sheet, boron nitride base and wire; The entrance of the ripple of T-shaped waveguide junction is exactly the channel entrance of channel layer, and two outlets of its ripple are respectively two channel outlet of channel layer. The present invention can bear 70KW peak power and the above mean power of 200W, has reduced the loss of device, has extended the life-span of device, and has reduced noise.

Description

Can bear the X-band high-speed switch of high-average power
Technical field
The present invention relates to a kind of X-band high-speed switch; Relate in particular to a kind of X-band high-speed switch that can bear high-average power.
Background technology
Existing X-band high-speed switch is developed for radar receiving branch, and its purposes is to replace discharge tube switch and access in receiving branch. This product structure is made up of the mill star oxysome being provided with in shell, T-shaped waveguide junction, T-shaped waveguide junction. Mill star oxysome is fixed on the center of T-shaped waveguide junction by support, wire is through mill star oxysome inside, in wire, flow through large pulse current, instantaneous generation high-intensity magnetic field, make T-shaped waveguide junction form an instantaneous circulator, the belt direction of this instantaneous circulator changes with the direction of pulse current, if Quan connect a matched load at a mouth of T-shaped waveguide junction, formed " opening " and " breaking " two states between another two mouths. It can make to be separately used as high-speed switch use, carries out the direct transmission channel switch of microwave, does the protector of radar receiver.
Existing X-band high-speed switch adopts the fixing mill star oxysome of polytetrafluoroethylene (PTFE) support, and its radiating effect is poor, bears power little; The material that mill star oxysome uses can only bear peak power 20KW, mean power 20W, switch times 1.5 μ s. If exceed the peak power of 20KW, this high-speed switch can not use. In order to address this is that, the inventor has applied for three centimeter frequency band rapid switch that application number is 200810068290.8 and preparation technology's patent of invention thereof, it discloses the X-band high-speed switch that can bear 70KW peak power and 100W mean power that adapts to the ferritic material prescription of high-power star and use this mill star oxysome to make, due to the development of Radar Technology, the mean power that this X-band high-speed switch can bear is still very low, can not meet the needs of prior art.
Summary of the invention
Object of the present invention solves the above-mentioned problems in the prior art exactly, and a kind of X-band high-speed switch that can bear 70KW peak power and the above mean power of 200W is provided.
For achieving the above object, technical solution of the present invention is: a kind of X-band high-speed switch that can bear high-average power, comprises power divider, comprises high power high-speed switch assembly, power combiner and the high power load of the channel layer of shell and even level; Power divider is identical with the structure of power combiner, and just the trend of microwave is contrary, and the ripple import of power divider is the ripple outlet of power combiner, and each ripple outlet of power divider is each ripple import of power combiner; The port number of ripple that the port number of the ripple that power divider separates and power combiner will be synthetic is identical with the number of plies of the channel layer of even level; On shell, there are three mouths: microwave import, microwave outlet and load fixing port; In the microwave import of shell, be fixed with power divider, in microwave outlet, be fixed with power combiner, on load fixing port, be fixed with high power load; The channel layer of even level is placed in shell; The just microwave import to shell respectively of the channel entrance of each channel layer, one of them of two channel outlet be the microwave outlet to shell just, and another is just to high power load; In each channel layer, be provided with one or multiple high power high-speed switches of connecting; High power high-speed switch comprises T-shaped waveguide junction, mill star oxysome, pottery coupling sheet, boron nitride base and wire; While being provided with a high power high-speed switch in each channel layer, the entrance of the ripple of T-shaped waveguide junction is exactly the channel entrance of channel layer, and two outlets of its ripple are respectively two channel outlet of channel layer; Mill star oxysome is fixed in T-shaped waveguide junction by boron nitride base; Wire is through on mill star oxysome, forms 1-2 circle; On shell, have wire import and wire outlet, outer lead is connected with the wire on each mill star oxysome with wire outlet by the wire import on shell; On each port of T-shaped waveguide junction, be fixed with respectively pottery coupling sheet.
The port number of the ripple that power divider described above separates and power combiner will be synthetic the port number of ripple and the number of plies of channel layer be all two. In the three centimeter frequency band rapid switch that bears 100W mean power that mill star oxysome employing application number in its high power high-speed switch is 200810068290.8 and preparation technology's application for a patent for invention thereof, the ferritic material prescription of disclosed star and manufacture craft are made, and it can bear the peak power of 70KW and the mean power of 200W.
The port number of the ripple that power divider described above separates and power combiner will be synthetic the port number of ripple and the number of plies of channel layer be all four. In the three centimeter frequency band rapid switch that bears 100W mean power that mill star oxysome employing application number in its high power high-speed switch is 200810068290.8 and preparation technology's application for a patent for invention thereof, the ferritic material prescription of disclosed star and manufacture craft are made, and it can bear the peak power of 70KW and the mean power of 400W.
The port number of the ripple that power divider described above separates and power combiner will be synthetic the port number of ripple and the number of plies of channel layer be all six. In the three centimeter frequency band rapid switch that bears 100W mean power that mill star oxysome employing application number in its high power high-speed switch is 200810068290.8 and preparation technology's application for a patent for invention thereof, the ferritic material prescription of disclosed star and manufacture craft are made, and it can bear the peak power of 70KW and the mean power of 600W.
In each high power load described above, fin is housed respectively, is convenient to the heat radiation of high power load, extended the service life of load.
Mill star oxysome described above is coated with the anti-paint of one deck three outward; On the upper and lower wall of the fixing ferritic T-shaped waveguide junction of star, scribble a layer insulating. Prevented that the ferritic high power of star from puncturing, good heat dissipation effect, has further extended the ferritic life-span of star.
The present invention is divided into two incident power with power divider or the even numbers such as four or six; The high power high-speed switch (each self energy is born the high-speed switch of 100W mean power) that is connected to the even number parallel connections such as two or four or six below, synthesizes a road by power combiner again by the microwave energy of high power high-speed switch and exports. So its mean power of bearing can reach peak power and 200W or 400W or 600W or the higher mean power of 70KW, its mean power of bearing is high, can meet the development need of Radar Technology. And it requires to reduce to the mill star oxysome in each high power high-speed switch and boron nitride substructure height, so the housing depth of its T-shaped waveguide junction reduces, has suppressed the generation of higher mode ripple, has reduced the loss of device, has extended the life-span of device.
Brief description of the drawings
Fig. 1 is front view of the present invention;
Fig. 2 is left view of the present invention;
Fig. 3 is the BB cutaway view of Fig. 2;
Fig. 4 is the AA cutaway view of Fig. 1;
Fig. 5 is the cross-sectional structural representation of single high power high-speed switch in the present invention;
Fig. 6 is the vertical profile structural representation of single high power high-speed switch in the present invention;
Fig. 7 is the ferritic structural representation of star in the present invention
Fig. 8 is the front view of power divider and power combiner in the present invention;
Fig. 9 is the upward view of power divider and the top view of power combiner in the present invention;
Figure 10 is the top view of power divider and the upward view of power combiner in the present invention.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
As shown in Figure 1, Figure 2, shown in Fig. 3, Fig. 4, Fig. 5, Fig. 6, Fig. 7, Fig. 8, Fig. 9 and Figure 10, the present embodiment comprises that a passage is divided into the power divider 8 of four-way, comprises shell 3 and four layers the high power high-speed switch assembly 11 of the channel layer 16,17,18 and 19 of (also two-layer, the even levels such as six layers), power combiner 1 and the high power load 6 that four-way is combined into a passage. Power divider 8 is identical with the structure of power combiner 1, and just the trend of microwave is contrary, and the ripple import 7 of power divider 8 is ripple outlets 13 of power combiner 1, and each ripple outlet 9 of power divider is each ripple import 12 of power combiner 1. On shell 3, there are three mouths: microwave import 14, microwave outlet 2 and load fixing port 4. In the microwave import 14 of shell, be fixed with power divider 8, in microwave outlet 2, be fixed with power combiner 1, on load fixing port 4, be fixed with high power load 6. The channel layer 16,17,18 and 19 of four layers is placed in shell 3; The channel entrance 28 just microwave imports 14 to shell respectively of each channel layer 16,17,18 or 19, one of them channel outlet 29 of two channel outlet 20,29 is the microwave outlet 2 to shell just, and another channel outlet 20 is just to high power load 6. In each channel layer interior 16,17,18 or 19, be provided with one or multiple high power high-speed switches of connecting. High power high-speed switch comprises T-shaped waveguide junction 25, mill star oxysome 26, pottery coupling sheet 34, boron nitride base 33 and wire 27. While being provided with a high power high-speed switch in each channel layer, the entrance of the ripple of T-shaped waveguide junction 25 is exactly the channel entrance 28 of channel layer, and two outlets of its ripple are respectively two channel outlet 20 and 29 of channel layer. Mill star oxysome 26 is fixed in T-shaped waveguide junction 25 by circular boron nitride base 33. Wire 27 is through interior the going up of through wires hole 35 of mill star oxysome 26, forms 1-2 circle. On shell 3, have wire import and wire outlet, outer lead is connected with the wire 27 on each mill star oxysome with wire outlet by the wire import on shell. On each port of T-shaped waveguide junction, be fixed with pottery coupling sheet 34 with glue respectively. It is that in 2008100682908 the three centimeter frequency band rapid switch that bears 100W mean power and preparation technology's thereof application for a patent for invention, the ferritic material prescription of disclosed star and manufacture craft are made that mill star oxysome 26 in high power high-speed switch adopts application number, and it can bear the peak power of 70KW and the mean power of 400W. Mill star oxysome is coated with the anti-paint of one deck three outward; On the upper and lower wall of the T-shaped waveguide junction of fixing mill star oxysome 26, scribble a layer insulating 32. In each high power load 6, fin 5 is housed respectively. Carry out suitable compression containing the ferritic waveguide junction of star.
Above-described embodiment is only preferred and exemplary, and those skilled in the art can carry out according to the description of this patent the improvement of equivalent technologies, and it is all in the protection domain of this patent.

Claims (10)

1. the X-band high-speed switch that can bear high-average power, is characterized in that: comprise power divider, comprise high power high-speed switch assembly, power combiner and the high power load of the channel layer of shell and even level; Power divider is identical with the structure of power combiner, and just the trend of microwave is contrary, and the ripple import of power divider is the ripple outlet of power combiner, and each ripple outlet of power divider is each ripple import of power combiner; The port number of ripple that the port number of the ripple that power divider separates and power combiner will be synthetic is identical with the number of plies of the channel layer of even level; On shell, there are three mouths: microwave import, microwave outlet and load fixing port; In the microwave import of shell, be fixed with power divider, in microwave outlet, be fixed with power combiner, on load fixing port, be fixed with high power load; The channel layer of even level is placed in shell; The just microwave import to shell respectively of the channel entrance of each channel layer, one of them of two channel outlet be the microwave outlet to shell just, and another is just to high power load; In each channel layer, be provided with one or multiple high power high-speed switches of connecting; High power high-speed switch comprises T-shaped waveguide junction, mill star oxysome, pottery coupling sheet, boron nitride base and wire; While being provided with a high power high-speed switch in each channel layer, the entrance of the ripple of T-shaped waveguide junction is exactly the channel entrance of channel layer, and two outlets of its ripple are respectively two channel outlet of channel layer; Mill star oxysome is fixed in T-shaped waveguide junction by boron nitride base; Wire is through on mill star oxysome, forms 1-2 circle; On shell, have wire import and wire outlet, outer lead is connected with the wire on each mill star oxysome with wire outlet by the wire import on shell; On each port of T-shaped waveguide junction, be fixed with respectively pottery coupling sheet.
2. the X-band high-speed switch that can bear high-average power according to claim 1, is characterized in that: the port number of ripple that the port number of the ripple that described power divider separates and power combiner will be synthetic and the number of plies of channel layer are all two.
3. the X-band high-speed switch that can bear high-average power according to claim 1, is characterized in that: the port number of ripple that the port number of the ripple that described power divider separates and power combiner will be synthetic and the number of plies of channel layer are all four.
4. the X-band high-speed switch that can bear high-average power according to claim 1, is characterized in that: the port number of ripple that the port number of the ripple that described power divider separates and power combiner will be synthetic and the number of plies of channel layer are all six.
5. according to the X-band high-speed switch that can bear high-average power described in claim 1 or 2 or 3 or 4, it is characterized in that: in described each high power load, fin is housed respectively.
6. the X-band high-speed switch that can bear high-average power according to claim 5, is characterized in that: described mill star oxysome is coated with the anti-paint of one deck three outward.
7. according to the X-band high-speed switch that can bear high-average power described in claim 1 or 2 or 3 or 4, it is characterized in that: described mill star oxysome is coated with the anti-paint of one deck three outward.
8. the X-band high-speed switch that can bear high-average power according to claim 6, is characterized in that: on the upper and lower wall of the described ferritic T-shaped waveguide junction of fixing star, scribble a layer insulating.
9. the X-band high-speed switch that can bear high-average power according to claim 7, is characterized in that: on the upper and lower wall of the described ferritic T-shaped waveguide junction of fixing star, scribble a layer insulating.
10. the X-band high-speed switch that can bear high-average power according to claim 5, is characterized in that: on the upper and lower wall of the described ferritic T-shaped waveguide junction of fixing star, scribble a layer insulating.
CN201410125937.1A 2014-04-01 2014-04-01 Can bear the X-band high-speed switch of high-average power Expired - Fee Related CN103956535B (en)

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Publication number Priority date Publication date Assignee Title
CN107946703A (en) * 2017-11-20 2018-04-20 北京无线电测量研究所 A kind of waveguide junction type ferrite switch of high heat conduction medium

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US7719384B1 (en) * 2008-09-25 2010-05-18 The United States Of America As Represented By The Secretary Of The Navy Broadband channelized circulator
CN202930523U (en) * 2012-12-06 2013-05-08 中国电子科技集团公司第三十八研究所 Full-K-band broadband high-power junction circulator
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Effective date of registration: 20170407

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Address before: 074100 Laishui province Baoding city Laishui County town of Yucai Road, No. 8, No.

Patentee before: LAISHUI LAICI KAILITE MAGNETIC INDUSTRY CO., LTD.

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