CN103956404A - Photoelectric detector manufacturing method and manufactured wide-angle photoelectric detector - Google Patents
Photoelectric detector manufacturing method and manufactured wide-angle photoelectric detector Download PDFInfo
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- CN103956404A CN103956404A CN201410131694.2A CN201410131694A CN103956404A CN 103956404 A CN103956404 A CN 103956404A CN 201410131694 A CN201410131694 A CN 201410131694A CN 103956404 A CN103956404 A CN 103956404A
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- 238000004519 manufacturing process Methods 0.000 title abstract 4
- 230000007704 transition Effects 0.000 claims abstract description 10
- 238000002360 preparation method Methods 0.000 claims description 24
- 238000002161 passivation Methods 0.000 claims description 19
- 230000012010 growth Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 2
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 9
- 230000035945 sensitivity Effects 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- -1 SOI Chemical compound 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a photoelectric detector manufacturing method. The photoelectric detector manufacturing method comprises the following steps that a p-GaN layer is grown in a photosensitive surface of the structure of a photoelectric detector and serves as a transition layer; a p-GaN layer is grown on the transition layer and serves as a crystal seed layer of a reconstructed structure; after the crystal seed layer is grown, rapid heating is carried out, a p-GaN layer is grown, and a reconstructed photosensitive surface is formed. The photoelectric detector manufacturing method has the advantages of being efficient and reliable, limitation of the angle of incidence of the Fresnel reflection coefficient is broken through the reconstruction of the surface of the photoelectric detector, the sensitivity of incident wavelength is reduced, an extra system is not needed, and the wide-angle detection can be achieved only through one photoelectric detector.
Description
Technical field
The wide-angle photodetector that the present invention relates to a kind of photodetector preparation method and preparation, belongs to field of semiconductor photoelectron technique.
Background technology
Photodetector is used widely in fields such as biomedicine, data storage medium, flame monitoring, ultraviolet dosage measurement, high-energy ray detection, medical treatment, safety check, industrial flaw detections.When incident light energy is greater than photodetector material energy gap, will make electronics transit to conduction band from valence band, produce electron hole pair, the electron hole pair of generation is collected by electrode, has just formed photoelectric current output.Quantum efficiency is one of most important performance index weighing by photodetector, mainly by photon incident efficiency, internal quantum efficiency and carrier collection efficiency, is determined.Because the refringence of semiconductor and air is large, suitable light, by boundary reflection, cannot enter into device and be collected, and causes device efficiency to reduce.Conventionally according to incident light and the catoptrical interference principle that disappears mutually, design and prepare anti-reflection film, the vertical incidence light incident efficiency of single wavelength is reached more than 95%.Yet the problem that this design brings is, when incident wavelength offset design wavelength, or incidence angle offset from perpendicular, detection efficient sharply declines.
According to Theory of Electromagnetic Field, take for electric field is example perpendicular to the TE ripple of the plane of incidence, and the Fresnel reflection coefficient that can derive TE ripple according to the continuity of interface is:
Wherein, θ
0for incidence angle, θ
1for the angle of emergence, θ
0with θ
1meet:
N wherein
0for the refractive index of incident medium, n
1refractive index for emergent medium.It is example that the incident light (TE ripple) of 650nm of take is incident to silicon materials surface from air, as shown in Figure 1, can show that TE wave reflection rate increases with the increase of incidence angle, illustrate that photon incident efficiency is relevant with angle, the photon incident of vertical normal incidence direction is most effective.Conventionally the anti-reflection film that people adopt, according to anti-reflection film thickness, be that λ/4 o'clock are λ to wavelength light transmission is the highest, the incident light that is used for anti-reflection 600nm at the silicon dioxide of silicon materials superficial growth one deck 100nm, by the silicon dioxide of 100nm, equivalence becomes an interface with silicon materials, its admittance is Y, defines its eigenmatrix to be:
Wherein, n
1and n
2be respectively the refractive index of silicon dioxide and silicon,
For the phase place thickness of silicon dioxide, d
1for the actual (real) thickness of silicon dioxide, Y=C/B, therefore adds the reflection coefficient after anti-reflection film to be:
Wherein, n
0refractive index for air.
Result of calculation as shown in Figure 2, can be found out, along with incidence angle is increased to 60 ° from 0 °, to 600nm wavelength, transmissivity is reduced to 75% from 91%, and transmissivity peak wavelength is also along with the centre wavelength of the increase off-design of angle, from 600nm, be reduced to 470nm, transmissivity constantly declines.
At present, at aspects such as space optical communication, weak light detection, return laser beam detections, all to wide-angle, photodetection has strong demand, the echo scattering causing due to laser beam divergence in surveying such as the diffuse reflection detection in space optical communication, return laser beam etc., the ranges of incidence angles that it is characterized in that incident light is large, intensity is faint, therefore these application all require photodetector when receiving the incident light of wider angle scope, have high sensitivity and quantum efficiency.
Just because of current anti-reflection film designing requirement incident light vertical incidence, in actual detection system, need extra detector Rotable Control System, owing to being subject to the restriction of Rotable Control System speed, scan efficiency is too low, therefore further proposed the Focused Optical system coordinating with photodetector and become focal plane array by increasing detector set, the detection of realization to all directions signal, but extra system has not only improved the volume of whole photodetector module, more strengthened and realized difficulty.
Summary of the invention
The object of the invention is to solve the problems of the technologies described above, and a kind of photodetector structure and preparation method of wide-angle is provided.
The technical solution used in the present invention is:
A preparation method for photodetector, comprises the steps:
Transition zone preparation process, in the photosurface of photodetector structure with the p-GaN of 800-1200 ℃ of growth one deck 200nm, as transition zone;
Seed layer preparation process, on described transition zone with the p-GaN of 600-900 ℃ of growth one deck 50nm, as the seed layer of structure structure again;
Structure step is rapidly heated after the seed layer of having grown again, and the p-GaN with 950-1200 ℃ of growth one deck 150nm, forms structure photosurface again.
Preferably, also comprise passivation layer preparation process after the described step of structure again, the ITO that forms 100nm by electron beam evaporation plating/sputter on structure photosurface again forms passivation layer, structure photosurface again described in described passivation layer envelopes completely.
Preferably, the upper surface of the described photosurface of structure is again out-of-flatness surface, with so that the catoptrical part producing after structure photosurface again described in oblique incident ray contact again as oblique incident ray, enter in described photodetection structure.
Preferably, the out-of-flatness of the described photosurface of structure again surface is the continuous cross section of rule.
Preferably, the continuous cross section of the described photosurface of structure is again taper, trapezoidal, rectangle, spherical, bulb-shaped recess shape, its figure duty ratio 50% to 100%.
Preferably, the thickness of the described photosurface of structure is again that 0.1 μ m is between 50 μ m.
The present invention has also disclosed a kind of wide-angle photodetector, comprise for generation of photoelectric photodetection structure, the upper surface of described photodetection structure is provided with structure photosurface again, the upper surface of the described photosurface of structure be again out-of-flatness surface with so that the catoptrical part producing after structure photosurface again described in oblique incident ray contact again as oblique incident ray, enter in described photodetection structure.
Preferably, the upper surface of the described photosurface of structure is more also provided with passivation layer, structure photosurface again described in described passivation layer covers completely, and the material of described passivation layer is SiO
2, SiN
x, MgF
2, ITO.
Preferably, in the photodetection structure that the described photosurface of structure again can be applicable to be prepared by silicon, polysilicon, GaAs, GaN, InP, SiC, ZnO, SOI, mercury cadmium telluride.
Preferably, described photodetection structure is the avalanche photodetector of linear model and Geiger mode angular position digitizer, or is PIN photodetector, or is MSM photodetector.
Beneficial effect of the present invention is: the preparation method that a kind of wide-angle photodetector is provided, high efficient and reliable, by at photodetector surfaces structure again, break the restriction of Fresnel reflection coefficient incidence angle, the susceptibility of reduction to incident wavelength, do not need to add extra system, only by single photodetector, realize wide-angle and survey.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the invention will be further described:
Fig. 1: TE ripple is incident to silicon materials surface from air, reflectivity is with the change curve of incidence angle.
Fig. 2: containing 100nm SiO
2the transmission curve figure of the silicon materials substrate of anti-reflection film to the incident light of 0 °, 30 ° and 60 ° incidence angle.
Fig. 3: the structural representation of wide-angle photodetector of the present invention.
Fig. 4: the input path schematic diagram of oblique incident ray on the photosurface of structure more of the present invention.
Fig. 5 to Fig. 9: the cross-sectional schematic of the photosurface of structure more of the present invention.
Figure 10: the preparation method's of wide-angle photodetector of the present invention profile corresponding to each step.
Embodiment
The present invention has disclosed a kind of wide-angle photodetector, and its structure as shown in Figure 3, comprises from top to bottom successively: passivation layer 101, structure photosurface 102 and photodetection structure 103 again.Described photodetection structure 103 is for generation of photoelectric effect, and this is prior art, does not repeat them here.Shown in Fig. 4, the upper surface of the described photosurface of structure again 102 be out-of-flatness surface with so that described in oblique incident ray contact the more catoptrical part of structure photosurface 102 rear generations again as oblique incident ray, enter in described photodetection structure 103, structure photosurface 102 again described in described passivation layer 101 envelopes completely.
Concrete, when incident light incides the photosurface of structure again 102 of photodetection structure 103 according to certain angle, because the actual incident angle in incidence point place changes, for inclined plane, reduced actual incident angle, therefore can improve oblique incidence optical transmission rate.Meanwhile, the light of reflection reflects in a plurality of interfaces, increases transmission and enters semi-conductive probability, thereby increase transmissivity, and the restriction of breaking Fresnel reflection coefficient incidence angle, reduces the susceptibility to incident wavelength, realizes wide-angle and surveys.
The photosurface of structure again 102 in the present invention, can be formed by methods such as chemical corrosion, laser grooving, reactive ion etching, mechanical carving groove, epitaxial growths, the darker 0.1 μ m of structure structure is to 50 μ m.The surface topography of the described photosurface of structure is again the continuous cross section of rule, can for as the taper of Fig. 5 to Fig. 9 announcement, trapezoidal, rectangle, spherical, bulb-shaped recess etc., its figure duty ratio 50% to 100%.
Photodetection structure 103 of the present invention can be repaired because of the surface damage that structure is introduced again by increase passivation layer 101 on structure photosurface 102 again, reduces surface recombination, reduces dark current.And because described passivation layer 101 has certain thickness, at 1nm, between 10 μ m, so it can be used as a kind of existence of anti-reflection film.These passivation layer 101 materials can be SiO
2, SiN
x, MgF
2, ITO etc.Certainly, if the consideration in cost, also can save this passivation layer 101, be that wide-angle photodetector only comprises photodetection structure and the photosurface of structure more provided thereon, at least part of surface of the described photosurface of structure is again out-of-flatness surface, with so that described in oblique incident ray contact the more catoptrical part of structure photosurface 102 rear generations again as oblique incident ray, enter in described photodetection structure 103.
The photosurface of structure again 102 of the present invention is applicable to the photodetector of being prepared by various materials such as silicon, polysilicon, GaAs, GaN, InP, SiC, ZnO, SOI, mercury cadmium tellurides.
The photosurface of structure again 102 of the present invention is applicable to the avalanche photodetector of linear model and Geiger mode angular position digitizer, is also applicable to PIN photodetector, MSM photodetector etc.
The preparation method of wide-angle photodetector of the present invention is once described below.
As shown in Figure 10, photodetection structure 203 adopts the GaN base photodetector of MOCVD growth, its again structure photosurface 202 take that by epitaxially grown method, to form pyramidal structure be example, preparation process and method are as follows:
Step (a), in the photosurface 202 of photodetector structure 203, using the p-GaN of 800-1200 ℃ of growth one deck 200nm as transition zone 204;
Step (b), on described transition zone 204, using the p-GaN of 600-900 ℃ of growth one deck 50nm as the seed layer 205 of structure structure again;
Step (c), after the seed layer 205 of having grown, be rapidly heated, the p-GaN with 950-1200 ℃ of growth one deck 150nm, forms structure photosurface 202 again;
Step (d), the ITO that forms 100nm by electron beam evaporation plating/sputter on structure photosurface 202 again form passivation layer 201, obtain wide-angle photodetector of the present invention.
Wherein, electron beam evaporation plating/be sputtered to prior art, does not repeat them here.
The present invention still has numerous embodiments, and all employing equivalents or equivalent transformation and all technical schemes of forming, within all dropping on protection scope of the present invention.
Claims (10)
1. a preparation method for photodetector, is characterized in that: comprises the steps,
Transition zone preparation process, in the photosurface (202) of photodetector structure (203) with the p-GaN of 800-1200 ℃ of growth one deck 200nm, as transition zone (204);
Seed layer preparation process, at the upper p-GaN with 600-900 ℃ of growth one deck 50nm of described transition zone (204), as the seed layer of structure structure (205) again;
Structure step is rapidly heated after the seed layer of having grown (205) again, and the p-GaN with 950-1200 ℃ of growth one deck 150nm, forms structure photosurface (202) again.
2. the preparation method of a kind of photodetector according to claim 1, it is characterized in that: after the described step of structure again, also comprise passivation layer preparation process, at structure photosurface (202) again, the upper ITO that forms 100nm by electron beam evaporation plating/sputter forms passivation layer (201), structure photosurface (202) again described in described passivation layer (201) envelopes completely.
3. the preparation method of a kind of photodetector according to claim 1 and 2, it is characterized in that: the upper surface of the described photosurface of structure again (102,202) is out-of-flatness surface, with so that the catoptrical part producing after structure photosurface (102,202) again described in oblique incident ray contact again as oblique incident ray, enter in described photodetection structure (103,203).
4. the preparation method of a kind of photodetector according to claim 3, is characterized in that: the continuous cross section that the out-of-flatness surface of the described photosurface of structure again (102,202) is rule.
5. the preparation method of a kind of photodetector according to claim 4, is characterized in that: the continuous cross section of the described photosurface of structure again (102,202) is taper, trapezoidal, rectangle, spherical, bulb-shaped recess shape, its figure duty ratio 50% to 100%.
6. the preparation method of a kind of photodetector according to claim 1, is characterized in that: the thickness of the described photosurface of structure again (102,202) is that 0.1 μ m is between 50 μ m.
7. a wide-angle photodetector prepared by preparation method according to claim 1, it is characterized in that: comprise for generation of photoelectric photodetection structure (103), the upper surface of described photodetection structure (103) is provided with structure photosurface (102) again, the upper surface of the described photosurface of structure again (102) be out-of-flatness surface with so that the catoptrical part producing after structure photosurface (102) again described in oblique incident ray contact again as oblique incident ray, enter in described photodetection structure (103).
8. wide-angle photodetector according to claim 7, it is characterized in that: the upper surface of the described photosurface of structure again (102) is also provided with passivation layer (101), structure photosurface (102) again described in described passivation layer (101) envelopes completely, the material of described passivation layer (101) is SiO
2, SiN
x, MgF
2, ITO.
9. wide-angle photodetector according to claim 7, is characterized in that: in the photodetection structure (103) that the described photosurface of structure again (102) can be applicable to be prepared by silicon, polysilicon, GaAs, GaN, InP, SiC, ZnO, SOI, mercury cadmium telluride.
10. wide-angle photodetector according to claim 7, is characterized in that: described photodetection structure (103) is the avalanche photodetector of linear model and Geiger mode angular position digitizer, or is PIN photodetector, or is MSM photodetector.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410131694.2A CN103956404B (en) | 2014-04-03 | 2014-04-03 | A kind of Radix Rumicis photodetector of photodetector preparation method and preparation |
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|---|---|---|---|
| CN201410131694.2A CN103956404B (en) | 2014-04-03 | 2014-04-03 | A kind of Radix Rumicis photodetector of photodetector preparation method and preparation |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505111A (en) * | 2016-10-14 | 2017-03-15 | 中国电子科技集团公司第十研究所 | A kind of cadmium-zinc-teiluride substrate, preparation method and applications |
| CN110890444A (en) * | 2019-11-14 | 2020-03-17 | 深圳第三代半导体研究院 | GaN ultraviolet detector and preparation method thereof |
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| CN1846378A (en) * | 2003-09-05 | 2006-10-11 | 新科实业有限公司 | Free space MSM photodetector assembly |
| US20090243023A1 (en) * | 2006-06-28 | 2009-10-01 | Miriam Reshotko | Dual seed semiconductor photodetectors |
| US20120068184A1 (en) * | 2002-04-15 | 2012-03-22 | The Regents Of The University Of California | Dislocation reduction in non-polar iii-nitride thin films |
| CN102800717A (en) * | 2012-08-30 | 2012-11-28 | 中山大学 | PIN structural ultraviolet photoelectric detector for avalanche and preparation method thereof |
| CN103681899A (en) * | 2013-12-18 | 2014-03-26 | 无锡中微晶园电子有限公司 | Photosensor with photosensitive density improved and manufacturing method thereof |
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2014
- 2014-04-03 CN CN201410131694.2A patent/CN103956404B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120068184A1 (en) * | 2002-04-15 | 2012-03-22 | The Regents Of The University Of California | Dislocation reduction in non-polar iii-nitride thin films |
| CN1846378A (en) * | 2003-09-05 | 2006-10-11 | 新科实业有限公司 | Free space MSM photodetector assembly |
| US20090243023A1 (en) * | 2006-06-28 | 2009-10-01 | Miriam Reshotko | Dual seed semiconductor photodetectors |
| CN102800717A (en) * | 2012-08-30 | 2012-11-28 | 中山大学 | PIN structural ultraviolet photoelectric detector for avalanche and preparation method thereof |
| CN103681899A (en) * | 2013-12-18 | 2014-03-26 | 无锡中微晶园电子有限公司 | Photosensor with photosensitive density improved and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505111A (en) * | 2016-10-14 | 2017-03-15 | 中国电子科技集团公司第十研究所 | A kind of cadmium-zinc-teiluride substrate, preparation method and applications |
| CN110890444A (en) * | 2019-11-14 | 2020-03-17 | 深圳第三代半导体研究院 | GaN ultraviolet detector and preparation method thereof |
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| CN103956404B (en) | 2016-06-15 |
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