CN103954824A - High voltage difference detection circuit - Google Patents
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- CN103954824A CN103954824A CN201410192017.1A CN201410192017A CN103954824A CN 103954824 A CN103954824 A CN 103954824A CN 201410192017 A CN201410192017 A CN 201410192017A CN 103954824 A CN103954824 A CN 103954824A
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Abstract
The invention discloses a high voltage difference detection circuit used for detecting the voltage difference between the high voltage output by a booster circuit and power source voltage. The high voltage difference detection circuit comprises a conversion comparison circuit part. The conversion comparison circuit part comprises a first resistor, a second resistor, a third resistor, a fourth resistor, a first triode, a first comparator and a second comparator. The emitting electrode of the first triode receives high voltage through the first resistor, and the base electrode of the first triode receives the power source voltage. The first end of the third resistor outputs the first conversion voltage. The first end of the second resistor outputs the second conversion voltage. The output end of the first comparator and the output end of the second comparator output a first comparison signal and a second comparison signal respectively. According to the high voltage difference detection circuit, the high voltage difference between the high voltage output by the booster circuit and the power source voltage can be converted into low-voltage conversion voltage, the conversion voltage is compared with a reference voltage, and therefore voltage pressure detection in the high voltage environment is achieved.
Description
Technical field
The present invention relates to a kind of voltage detecting circuit, relate in particular to a kind of high pressure pressure differential detection circuit for booster circuit.
Background technology
In existing voltage detecting circuit, for high-voltage value being compared with lower reference voltage, generally need to use a resistance string to carry out dividing potential drop effect, as shown in Figure 1.In Fig. 1, resistance R 1 and resistance R 2 represent respectively the resistance of a string series connection, and its input voltage is Vin, and output voltage is V
01, V wherein
01=Vin*R
2/ (R
1+ R
2), by output voltage V
01be linked in follow-up comparator circuit and reference voltage V
rEFcompare to export fiducial value Y, just can realize the detection to input voltage vin.
Development along with integrated circuit technology, the form of boosting of booster circuit is more and more extensive, the use of the high pressure such as power MOSFET, make in charge pump and DC-DC booster circuit, often need to produce the output voltage V out that follows supply voltage Vin linear change, the difference of output voltage and input voltage is definite value, and its relation as shown in Figure 2.Existing voltage-dividing detection circuit can only realize carries out dividing potential drop and the value of dividing potential drop and reference voltage is compared high pressure, can not realize the pressure reduction of output voltage and input voltage and reference voltage are compared as shown in Figure 2, therefore, existing voltage detecting circuit is difficult to meet this requirement not changing under its topological structure.
Therefore, those skilled in the art is devoted to develop a kind of circuit that can detect output voltage size and supply voltage pressure reduction in booster circuit.
Summary of the invention
Because the above-mentioned defect of prior art the invention provides a kind of high pressure pressure differential detection circuit, to solve under high voltage environment, the technical matters to the detection of the pressure reduction of the high tension voltage of exporting in booster circuit and supply voltage.
For achieving the above object, the invention provides a kind of high pressure pressure differential detection circuit, for detection of the high tension voltage of booster circuit output and the pressure reduction of supply voltage, it comprises conversion comparator circuit part and current compensation circuit part.Conversion comparator circuit partly comprises the first resistance, the second resistance, the 3rd resistance, the 4th resistance, the first triode, the first comparer and the second comparer.The emitter of the first triode receives high tension voltage by the first resistance, and the base stage of the first triode receives supply voltage, and the first end of the 3rd resistance is connected in the collector of the first triode.The first end of the second resistance is connected in the second end of the 3rd resistance, and the second end of the second resistance is by the 4th resistance eutral grounding.The first end of the 3rd resistance is exported the first changing voltage.The first end of the second resistance is exported the second changing voltage.The negative input of the first comparer is connected in the first end of the 3rd resistance to receive the first changing voltage.The positive input of the second comparer is connected in the first end of the second resistance to receive the second changing voltage.The negative input of the positive input of the first comparer and the second comparer receives respectively reference voltage.The output terminal of the output terminal of the first comparer and the second comparer is exported respectively the first comparison signal and the second comparison signal.When the first comparison signal is low level from high level saltus step, booster circuit normally work (complete and boost), the second comparer is started working, pressure differential detection starts, wherein, and before the second comparison signal saltus step is high level, high tension voltage Vin is not less than the 3rd threshold voltage vt h3, and be not more than Second Threshold voltage, after the second comparison signal saltus step is high level, high tension voltage is greater than Second Threshold voltage; When the first comparison signal is high level from low transition, expression booster circuit is no longer normally worked, and the second comparer quits work, and pressure differential detection finishes.
In better embodiment of the present invention, first threshold voltage
wherein, VBB is supply voltage, and Vref is reference voltage, R
1be the resistance value of the first resistance, R
2be the resistance value of the second resistance, R
3be the resistance value of the 3rd resistance, R
4it is the resistance value of the 4th resistance; Second Threshold voltage
The 3rd threshold voltage
In better embodiment of the present invention, the first comparison signal is as low pressure locking signal, in order to judge whether booster circuit normally works; As the first comparison signal Y
1during for high level, circuit is in low pressure locking mode, as the first comparison signal Y
1during for low level, circuit is in detecting comparison pattern.The second comparison signal compares input voltage and Second Threshold voltage, controls the threshold size of boosting of booster circuit.
In better embodiment of the present invention, conversion comparator circuit part also comprises the first field effect transistor.The base stage of the first field effect transistor is connected in the output terminal of the first comparer, and the collector of the first field effect transistor is connected in the second end of the second resistance, the grounded emitter of the first field effect transistor.
In better embodiment of the present invention, also comprise current compensation circuit part, the first end that the output terminal of current compensation circuit part is connected in the 3rd resistance is with the electric current that affords redress.
In better embodiment of the present invention, current compensation circuit partly comprises reference current, the 5th resistance, the second triode, the 3rd triode, the second field effect transistor, the 3rd field effect transistor, the 4th field effect transistor, the 5th field effect transistor.The input end of reference current is connected in the base stage of the second triode and the collector of the 3rd triode.The emitter of the second triode is connected in the base stage of the 3rd triode and by the 5th resistance, is connected in the emitter of the 3rd triode, and the collector of the second triode is connected in drain electrode and the grid of the second field effect transistor.The source electrode of the source electrode of the output terminal of reference current, the second field effect transistor and the 3rd field effect transistor is ground connection respectively.The grid of the 3rd field effect transistor is connected in the grid of the second field effect transistor, and the drain electrode of the 3rd field effect transistor is connected in the drain and gate of the 4th field effect transistor.The source electrode of the source electrode of the 4th field effect transistor and the 5th field effect transistor is connected to the emitter of the 3rd triode.The grid of the 5th field effect transistor is connected in the grid of the 4th field effect transistor, and the collector of the 5th field effect transistor is connected in the first end of the 3rd resistance with output offset current.
In better embodiment of the present invention, the 5th resistance is identical with the resistance value of the first resistance.
In better embodiment of the present invention, the second field effect transistor and the 3rd field effect transistor are respectively NMOS field effect transistor, and the 4th field effect transistor and the 5th field effect transistor are respectively PMOS field effect transistor.
High pressure pressure differential detection circuit provided by the invention, can be the changing voltage in low pressure situation by the high tension voltage of booster circuit output and the pressure reduction linear transformation of supply voltage, and itself and reference voltage have been compared to the pressure differential detection under high voltage environment.By same reference voltage, two comparers, same relatively branch road, completes the comparison of two different switching voltages, makes testing circuit have low pressure lock function simultaneously.
Below with reference to accompanying drawing, the technique effect of design of the present invention, concrete structure and generation is described further, to understand fully object of the present invention, feature and effect.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of traditional voltage detecting comparator circuit;
Fig. 2 is the voltage relationship figure of input voltage and output voltage in Fig. 1;
Fig. 3 is the schematic diagram of the high pressure pressure differential detection circuit of preferred embodiment of the present invention;
Fig. 4 is the graph of a relation of pressure reduction, the first comparison signal and second comparison signal of preferred embodiment of the present invention.
Embodiment
In embodiments of the invention, as shown in the figure 3, high pressure pressure differential detection circuit is for detection of the pressure reduction of the high tension voltage of exporting in booster circuit and supply voltage.Wherein, high pressure pressure differential detection circuit comprises conversion comparator circuit part and current compensation circuit part.
In embodiments of the invention, conversion comparator circuit partly comprises the first resistance R
1, the second resistance R
2, the 3rd resistance R
3, the 4th resistance R
4, the first triode Q
1, the first field effect transistor M
1, the first comparator C M1 and the second comparator C M2.The first triode Q
1emitter by the first resistance R
1receive high tension voltage Vin.The first triode Q
1base stage receive supply voltage VBB.The first triode Q
1collector be connected in the 3rd resistance R
3first end.The second resistance R
2first end be connected in the 3rd resistance R
3the second end, the second resistance R
2the second end by the 4th resistance R
4ground connection.The negative input of the first comparator C M1 is connected in the 3rd resistance R
3first end to receive the first changing voltage V
o1.The positive input of the second comparator C M2 is connected in the second resistance R
2first end to receive the second changing voltage V
o2.The negative input of the positive input of the first comparator C M1 and the second comparator C M2 receives respectively reference voltage V
rEF.The output terminal of the output terminal of the first comparator C M1 and the second comparator C M2 is exported respectively the first comparison signal Y
1with the second comparison signal Y
2.The first field effect transistor M
1base stage be connected in the output terminal of the first comparator C M1, the first field effect transistor M
1collector be connected in the second resistance R
2the second end, the first field effect transistor M
1grounded emitter.Wherein, the first field effect transistor M
1for NMOS field effect transistor.
In conversion comparator circuit part, the first triode Q
1with the first resistance R
1pressure reduction Vin-VBB is converted to pressure reduction electric current (Vin-VBB)/R
1.The 3rd resistance R
3, the second resistance R
2and the 4th resistance R
4the dividing potential drop branch road at place is again by pressure reduction electric current (Vin-VBB)/R
1be converted into two changing voltage outputs that magnitude of voltage is lower, by the 3rd resistance R
3the first changing voltage V of first end output
o1with by the second resistance R
2the second changing voltage V of first end output
o2, and due to dividing potential drop effect, have all the time the first changing voltage V
o1be greater than the second changing voltage V
o2.The first comparator C M1 and the second comparator C M2 realize described two changing voltages and reference voltage V
rEFcomparison under low-pressure state.In practical application, the first triode Q
1, there is conduction voltage drop V in ideal triode not between its emitter and base stage
bE, therefore, actual pressure reduction electric current I
r1'=(Vin-VBB-V
bE)/R
1=((Vin-VBB)/R
1-V
bE/ R
1), from formula, actual pressure reduction electric current I
r1' than desirable pressure reduction electric current (Vin-VBB)/R
1current value lost V
bE/ R
1.In order to compensate the first triode Q
1conduction voltage drop V
bEthe current loss causing, it is V that current value need to be provided
bE/ R
1offset current I
mend.
Thus, in embodiments of the invention, current compensation circuit is partly the conversion comparator circuit electric current that partly affords redress.Current compensation circuit partly comprises reference current Iref, the 5th resistance R
5, the second triode Q
2, the 3rd triode Q
3, the second field effect transistor M
2, the 3rd field effect transistor M
3, the 4th field effect transistor M
4, the 5th field effect transistor M
5.The input end of reference current Iref is connected in the second triode Q
2base stage and the 3rd triode Q
3collector.The 3rd triode Q
3emitter be connected in low-tension supply VDD.The second triode Q
2emitter be connected in the 3rd triode Q
3base stage and by the 5th resistance R
5be connected in the 3rd triode Q
3emitter.The second triode Q
2collector be connected in the second field effect transistor M
2drain electrode and grid.The output terminal of reference current Iref, the second field effect transistor M
2source electrode and the 3rd field effect transistor M
3source electrode ground connection respectively.The 3rd field effect transistor M
3grid be connected in the second field effect transistor M
2grid, the 3rd field effect transistor M
3drain electrode be connected in the 4th field effect transistor M
4drain and gate.The 4th field effect transistor M
4source electrode and the 5th field effect transistor M
5source electrode be connected to the 3rd triode Q
3emitter.The 5th field effect transistor M
5grid be connected in the 4th field effect transistor M
4grid, the 5th field effect transistor M
5collector be connected in the 3rd resistance R
3first end with the electric current that affords redress.Wherein, the second field effect transistor M
2with the 3rd field effect transistor M
3be respectively NMOS field effect transistor, the 4th field effect transistor M
4with the 5th field effect transistor M
5be respectively PMOS field effect transistor.
In current compensation circuit part, the 5th resistance R
5with the first resistance R
1resistance value identical, thus, the 5th field effect transistor M
5the offset current I of collector output
mendsize be V
bE/ R
1, the 3rd resistance R
3current value I
r3=I
r1'+I
mend=(Vin-VBB)/R
1.From above formula, high pressure pressure differential detection circuit provided by the invention has been realized and has been flow through resistance R
3electric current and the linear relationship of high tension voltage Vin.
Be below high pressure pressure differential detection electric circuit inspection process of the present invention, please also refer to Fig. 3 and Fig. 4.
When high tension voltage Vin is started to rise by VBB, pressure reduction Vin-VBB rises gradually since 0, in this process, and the first changing voltage V
o1be less than reference voltage V
rEF, the first comparison signal Y
1the value of output is 1; The second changing voltage V
o2be less than reference voltage V
rEF, the second comparison signal Y
2the value of output is 0.Now, the first field effect transistor M
1conducting, the 4th resistance R
4do not have electric current to flow through, the first changing voltage V
o1magnitude of voltage be: V
o1=I
r3* (R
2+ R
3the * of)=(Vin-VBB) (R
2+ R
3)/R
1high tension voltage Vin rises gradually, the first changing voltage V
o1with the second changing voltage V
o2also rise gradually, and the first changing voltage V
o1prior to the second changing voltage V
o2arrive reference voltage V
rEF, the first comparator C M1 more first realizes upset.That is, as the first changing voltage V
o1rise to and equal reference voltage V
rEFtime, the first comparison signal Y
1value by 1 saltus step, be 0, now, the second comparison signal Y
2value remain 0; Meanwhile, the first field effect transistor M
1close the 4th resistance R
4there is electric current to flow through.In the first comparison signal Y
1value saltus step be 0 the moment, the magnitude of voltage of high tension voltage Vin is first threshold voltage Vth1=VBB+ (V
rEF* R
1)/(R
2+ R
3).After this, high tension voltage Vin continues to rise, and its magnitude of voltage is: Vin>Vth1=VBB+ (V
rEF* R
1)/(R
2+ R
3)
The first comparison signal Y
1reality is low pressure locking signal, in order to judge whether booster circuit normally works.Particularly, as the first comparison signal Y
1value be 1 o'clock, represent not normal work (do not complete and boost) of booster circuit, testing circuit is in low pressure locking mode, the second comparison signal Y
2without feeding back to booster circuit; As the first comparison signal Y
1value after 1 becomes 0, represent that booster circuit normally works (complete and boost), high pressure pressure differential detection circuit enters detection comparison pattern, the second comparison signal Y
2feed back to booster circuit.
Wherein, the first field effect transistor M
1introducing, when making testing circuit in low pressure locking mode and detecting the conversion of comparison pattern, the first comparator C M1 is when realizing upset, avoided it near threshold value, to occur continuing the chirp phenomenon of shake upset, stablize the output of the low pressure locking signal of the first comparer, also further optimized the comparison precision of circuit.
When high pressure pressure differential detection circuit enters detection comparison pattern, the magnitude of voltage of high tension voltage Vin is greater than first threshold voltage Vth1 and continues and rises, now, and the second changing voltage V
o2magnitude of voltage be: V
o2=I
r3* (R
2+ R
4the * of)=(Vin-VBB) (R
2+ R
4)/R
1.The second changing voltage V
o2also rise to gradually and be greater than reference voltage V
rEF, the second comparator C M2 realizes upset.That is, as the second changing voltage V
o2magnitude of voltage rise to and equal reference voltage V
rEFtime, the second comparison signal Y
2value by 0 saltus step, be 1, now, the first comparison signal Y
1value remain 0.In the second comparison signal Y
2value saltus step be 1 the moment, the magnitude of voltage of high tension voltage Vin is Second Threshold voltage Vth2=VBB+ (V
rEF* R
1)/(R
2+ R
4).After this, high tension voltage Vin continues to rise, and the magnitude of voltage of high tension voltage Vin is: Vin>Vth2=VBB+ (V
rEF* R
1)/(R
2+ R
4).
The second comparison signal Y
2reality is high pressure detection signal, and it directly feeds back in booster circuit as the control signal of booster circuit, to regulate the threshold value of boosting of booster circuit.。
At the second comparison signal Y
2retroactive effect under, when high tension voltage Vin reaches and can decline gradually after certain amplitude threshold value, the second changing voltage V
o2with the first changing voltage V
o1also decline gradually, and the second changing voltage V
o2prior to the first changing voltage V
o1decline and arrive reference voltage V
rEF, the second comparator C M2 more first realizes upset.That is, as the second changing voltage V
o2drop to and equal reference voltage V
rEFtime, the second comparison signal Y
2value become 0 from 1, now, the first comparison signal Y
1value remain 0.In the second comparison signal Y
2value saltus step be 0 the moment, the magnitude of voltage of high tension voltage Vin is Second Threshold voltage Vth2.
As the first changing voltage V
o1magnitude of voltage be reduced to gradually and be less than reference voltage V
rEF, the first comparator C M1 will overturn again, the first changing voltage V
o1magnitude of voltage be: V
o1=I
r3* (R
2+ R
3+ R
4the * of)=(Vin-VBB) (R
2+ R
3+ R
4)/R
1.As the first changing voltage V
o1magnitude of voltage be reduced to and equal reference voltage V
rEFtime, the first comparison signal Y
1value to being 1 by 0 saltus step, now, the second comparison signal Y
2value remain 0; Meanwhile, the first field effect transistor M
1conducting, the 4th resistance R
4do not have electric current to flow through.In the first comparison signal Y
1value saltus step be 1 the moment, the magnitude of voltage of high tension voltage Vin is the 3rd threshold voltage vt h3=VBB+ (V
rEF* R
1)/(R
2+ R
3+ R
4).
As the first comparison signal Y
1value to being returned at 1 o'clock by 0, represent that booster circuit no longer normally works, pressure differential detection finishes, testing circuit exits and detects comparison pattern and enter low pressure locking mode, completes the voltage lock function of high pressure pressure differential detection circuit.
Known from the above mentioned, as the first comparison signal Y
1from high level saltus step, be low level, booster circuit is normally worked (complete and boost), and the second comparer is started working, and pressure differential detection starts, and circuit enters detection comparison pattern; Wherein, at the second comparison signal Y
2saltus step is before high level, and high tension voltage Vin is not less than the 3rd threshold voltage vt h3 and is not more than Second Threshold voltage Vth2, as the second comparison signal Y
2when saltus step is high level, high tension voltage Vin is greater than Second Threshold voltage Vth2.As the first comparison signal Y
1while being high level from low transition, expression booster circuit is no longer normally worked, and the second comparer quits work, and pressure differential detection finishes, and now high tension voltage Vin is the 3rd threshold voltage vt h3; As the first comparison signal Y
1during for high level, circuit enters low pressure locking mode.
In sum, high pressure pressure differential detection circuit provided by the invention, can be the changing voltage in low pressure situation by the pressure reduction linear transformation of the high tension voltage of exporting in booster circuit and supply voltage, and itself and reference voltage have been compared to the pressure differential detection under high voltage environment.Meanwhile, by same reference voltage, two comparers, same relatively branch road, completes the comparison of two different switching voltages, makes testing circuit have low pressure lock function simultaneously; And the output of the low pressure locking signal of the first comparer has been stablized in the introducing of the first transistor, further optimized the comparison precision of circuit.
More than describe preferred embodiment of the present invention in detail.The ordinary skill that should be appreciated that this area just can design according to the present invention be made many modifications and variations without creative work.Therefore, all technician in the art, all should be in the determined protection domain by claims under this invention's idea on the basis of existing technology by the available technical scheme of logical analysis, reasoning, or a limited experiment.
Claims (6)
1. a high pressure pressure differential detection circuit, for detection of the high tension voltage of booster circuit output and the pressure reduction of supply voltage, is characterized in that, described high pressure pressure differential detection circuit comprises:
Conversion comparator circuit part, described conversion comparator circuit partly comprises the first resistance, the second resistance, the 3rd resistance, the 4th resistance, the first triode, the first comparer and the second comparer, the emitter of described the first triode receives described high tension voltage by described the first resistance, the base stage of described the first triode receives described supply voltage, the first end of described the 3rd resistance is connected in the collector of described the first triode, the first end of described the second resistance is connected in the second end of described the 3rd resistance, the second end of described the second resistance is by described the 4th resistance eutral grounding, the first end of described the 3rd resistance is exported the first changing voltage, and the first end of described the second resistance is exported the second changing voltage, the negative input of described the first comparer is connected in the first end of described the 3rd resistance to receive described the first changing voltage, the positive input of described the second comparer is connected in the first end of described the second resistance to receive described the second changing voltage, the negative input of the positive input of described the first comparer and described the second comparer receives respectively reference voltage, and the output terminal of the output terminal of described the first comparer and described the second comparer is exported respectively the first comparison signal and the second comparison signal.
2. high pressure pressure differential detection circuit according to claim 1, it is characterized in that, described conversion comparator circuit part also comprises the first field effect transistor, the base stage of described the first field effect transistor is connected in the output terminal of described the first comparer, the collector of described the first field effect transistor is connected in the second end of described the second resistance, the grounded emitter of described the first field effect transistor.
3. high pressure pressure differential detection circuit according to claim 1, is characterized in that, also comprises current compensation circuit part, and the first end that the output terminal of described current compensation circuit part is connected in described the 3rd resistance is with the electric current that affords redress.
4. high pressure pressure differential detection circuit according to claim 3, it is characterized in that, described current compensation circuit partly comprises reference current, the 5th resistance, the second triode, the 3rd triode, the second field effect transistor, the 3rd field effect transistor, the 4th field effect transistor, the 5th field effect transistor, the input end of described reference current is connected in the base stage of described the second triode and the collector of described the 3rd triode, the emitter of described the second triode is connected in the base stage of described the 3rd triode and by described the 5th resistance, is connected in the emitter of described the 3rd triode, the collector of described the second triode is connected in drain electrode and the grid of described the second field effect transistor, the output terminal of described reference current, the source electrode of the source electrode of described the second field effect transistor and described the 3rd field effect transistor is ground connection respectively, the grid of described the 3rd field effect transistor is connected in the grid of described the second field effect transistor, the drain electrode of described the 3rd field effect transistor is connected in the drain and gate of described the 4th field effect transistor, the source electrode of the source electrode of described the 4th field effect transistor and described the 5th field effect transistor is connected to the emitter of described the 3rd triode, the grid of described the 5th field effect transistor is connected in the grid of described the 4th field effect transistor, the collector of described the 5th field effect transistor is connected in the first end of described the 3rd resistance to export described offset current.
5. high pressure pressure differential detection circuit according to claim 4, is characterized in that, described the 5th resistance is identical with the resistance value of described the first resistance.
6. high pressure pressure differential detection circuit according to claim 4, is characterized in that, described the second field effect transistor and described the 3rd field effect transistor are respectively NMOS field effect transistor, and described the 4th field effect transistor and described the 5th field effect transistor are respectively PMOS field effect transistor.
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| CN112513649A (en) * | 2018-03-29 | 2021-03-16 | Ams传感器英国有限公司 | Circuit for measuring resistance |
| CN113110690A (en) * | 2020-01-09 | 2021-07-13 | 株式会社东海理化电机制作所 | Comparison circuit |
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| 张颖 等: "高精度、宽容限电源电压检测电路的设计", 《中国集成电路》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106230000A (en) * | 2016-08-30 | 2016-12-14 | 合肥智博电气有限公司 | Electromagnetism voltage-stabilizing energy-saving device reactive power compensator |
| CN112513649A (en) * | 2018-03-29 | 2021-03-16 | Ams传感器英国有限公司 | Circuit for measuring resistance |
| CN113110690A (en) * | 2020-01-09 | 2021-07-13 | 株式会社东海理化电机制作所 | Comparison circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103954824B (en) | 2016-08-24 |
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