CN103941930A - Capacitive touch screen sensor and method for manufacturing capacitive touch screen sensor - Google Patents
Capacitive touch screen sensor and method for manufacturing capacitive touch screen sensor Download PDFInfo
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- CN103941930A CN103941930A CN201310025408.XA CN201310025408A CN103941930A CN 103941930 A CN103941930 A CN 103941930A CN 201310025408 A CN201310025408 A CN 201310025408A CN 103941930 A CN103941930 A CN 103941930A
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- conductive layer
- insulation course
- touch screen
- capacitive touch
- substrate
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Abstract
The invention provides a capacitive touch screen sensor and a method for manufacturing the capacitive touch screen sensor. The capacitive touch screen sensor comprises a substrate, a first conducting layer, a first insulating layer, a second conducting layer and a second insulating layer, wherein the first conducting layer is located on the surface of the substrate, the first insulating layer is located on the first conducting layer and the substrate, the second conducting layer is located on the first insulating layer, the first conducting layer and the substrate, the second insulating layer is located on the second conducting layer and the first insulating layer, via holes are formed in the first insulating layer, the second conducting layer is communicated with the first conducing layer through the via holes, and at least all the area, except the via holes, of the first conducting layer is covered with the first insulating layer, and part of the surface of the substrate is also covered with the first insulating layer. According to the capacitive touch screen sensor and the method for manufacturing the capacitive touch screen sensor, due to the fact that all the area, except the via holes, of the first conducting layer is covered with the first insulating layer and part of the area of the surface of the substrate is also covered with the first insulating layer, the overall coverage of the first insulating layer is reduced, and the overall transmittance of the touch screen sensor is increased; meanwhile, the difficulty of etching of the first insulating layer is lowered, industrial production can be achieved easily, the product quality is improved, and the qualified rate of products is increased.
Description
Technical field
The present invention relates to touch screen technology, be specifically related to a kind of capacitive touch screen sensor and preparation method thereof.
Background technology
In traditional one-sided tin indium oxide (SITO, Single ITO) capacitive touch screen sensor (Sensor), adopt SiO
2or SiN
xduring as insulation course, large area etching easily causes insulation course residual.For fear of insulation course is residual, sensor function is exerted an influence, capacitive touch screen sensor generally adopts extensive insulation layer to separate the second transverse conductance layer and second longitudinal conductive layer.Fig. 1 and Fig. 2 are planimetric map and the sectional view of existing conventional capacitive touch screen sensor.As shown in Figures 1 and 2, the structure of capacitive touch screen sensor comprise from the bottom to top substrate 10, be positioned at substrate 10 surfaces the first conductive layer 11, be positioned at the first insulation course (SiO on the first conductive layer 11 and substrate 10
2/ SiN
x) 12, be positioned at the second conductive layer (ITO) 13 on the first insulation course 12 and the first conductive layer 11 and be positioned at the second conductive layer 13 and the first insulation course 12 on the second insulation course (SiO
2/ SiN
x) 14, wherein, the second conductive layer 13 comprises the second transverse conductance layer (ITO-X) 13A and second longitudinal conductive layer (ITO-Y) 13B, the second transverse conductance layer 13A and second longitudinal conductive layer 13B separate by the second insulation course 14, the direct conducting of second longitudinal conductive layer 13B, the second transverse conductance layer 13A connects by metal/ITO (tin indium oxide) bridge, between the first conductive layer 11 and the second transverse conductance layer 13A, is communicated with by the via hole 15 on the first insulation course 12.
Find out from Fig. 1 and Fig. 2, in the structure of existing conventional capacitive touch screen sensor, the first insulation course nearly cover the All Ranges except via hole on substrate, add outermost the second insulation course, make the thicknesses of layers in most of region of capacitive touch screen sensor thicker, thereby make the transmitance of touch panel sensor entirety lower, if adopt SiN
xas the first insulation course, touch-screen will have darker color.
Fig. 3 and Fig. 4 are planimetric map and the sectional view of the capacitive touch screen sensor that transmitance is higher in theory.As shown in Figures 3 and 4, the capacitive touch screen sensor that transmitance is higher in theory comprises substrate 20 from bottom to top, be positioned at first conductive layer 21 on substrate 20 surfaces, be positioned at the first insulation course 22 on the first conductive layer 21, be positioned at the first insulation course 22, the second conductive layer 23 on the first conductive layer 21 and substrate 20 and be positioned at the second conductive layer 23 and the first insulation course 22 on the second insulation course 24, wherein, the second conductive layer 23 comprises the second transverse conductance layer 23A and second longitudinal conductive layer 23B, the direct conducting of second longitudinal conductive layer 23B, the capacitive touch screen sensor that transmitance is higher in theory and the difference of existing conventional capacitive touch screen sensor are, on the first insulation course 22 of the capacitive touch screen sensor that transmitance is higher in theory, there is no via hole, the first conductive layer 21 is directly connected with second longitudinal conductive layer 23B, the second transverse conductance layer 23A connects by metal bridge, the overlay area area less (only covering the subregion of the first conductive layer 11) of the first insulation course 22, thereby reduce the thicknesses of layers in the most of region of touch panel sensor, improve the transmitance of touch panel sensor entirety, also avoided employing SiN
xduring as the first insulation course, touch-screen has compared with dark colour problem, but because the area coverage of the first insulation course is less, cause the etching technics difficulty of the first insulation course to strengthen, the more difficult volume production of carrying out, and because the first insulation course only covers the subregion of the first conductive layer, while also making etching the first insulation course, easily by the first conductive layer etching, the qualification rate of product is reduced, the first conductive layer can not obtain adequately protecting of the first insulation course simultaneously, thus the mass formation impact on product.
Therefore, how to provide a kind of transmitance higher and easily realize industrial capacitive touch screen sensor and become this area problem demanding prompt solution.
Summary of the invention
In view of this, fundamental purpose of the present invention is to provide a kind of capacitive touch screen sensor and preparation method thereof, reduces the area coverage of insulation course of capacitive touch screen sensor, improves transmitance, and is beneficial to and realizes commercial production.
In order to achieve the above object, the invention provides a kind of capacitive touch screen sensor, described capacitive touch screen sensor comprises:
Substrate,
Be positioned at the first conductive layer of substrate surface,
Be positioned at the first insulation course on described the first conductive layer and described substrate,
Be positioned at the second conductive layer on described the first insulation course, described the first conductive layer and described substrate, and
Be positioned at the second insulation course on described the second conductive layer and described the first insulation course;
Wherein, described the first insulation course is provided with via hole, described the second conductive layer is communicated with by described via hole with described the first conductive layer, and described the first insulation course is set at least cover the All Ranges except described via hole on described the first conductive layer, and cover part substrate surface.
Further, described the second conductive layer comprises the second transverse conductance layer and second longitudinal conductive layer, and described the second transverse conductance layer or described second longitudinal conductive layer are communicated with described the first conductive layer by described via hole.
Further, the material of described the first insulation course and/or described the second insulation course is SiN
xor SiO
2.
The method for making that the present invention further provides a kind of capacitive touch screen sensor, said method comprising the steps of:
Step a, deposits the first conductive layer at substrate surface, forms the first conducting layer figure by etching;
Step b, on completing steps a substrate after treatment, deposit the first insulation course, form the first insulation course figure by etching, on the first insulation course after etching, be formed with via hole, and the first insulation course after etching at least covers the All Ranges except via hole on the first conductive layer, and cover part substrate surface, and be positioned on the first conductive layer and substrate;
Step c, on completing steps b substrate after treatment, deposit the second conductive layer, form the second conducting layer figure by etching, the second conductive layer after etching is positioned on the first insulation course, the first conductive layer and substrate, and the second conductive layer is communicated with by via hole with the first conductive layer; And
Steps d deposits the second insulation course on completing steps c substrate after treatment.
Further, in step c, the second conductive layer after described etching comprises the second transverse conductance layer and second longitudinal conductive layer, and described the second transverse conductance layer or described second longitudinal conductive layer are communicated with described the first conductive layer by via hole.
Further, the material of described the first insulation course and/or described the second insulation course is SiN
xor SiO
2.
Compared with prior art, the area of the first insulation course of capacitive touch screen sensor provided by the invention is set at least cover the All Ranges except via hole on the first conductive layer, and the subregion on covered substrate surface, the overall area coverage of the first insulation course is reduced, thereby reduce total thicknesses of layers of touch panel sensor, improve the transmitance of touch panel sensor entirety, avoided adopting SiN
xduring as the first insulation course, touch-screen has compared with dark colour problem; simultaneously because the first insulation course of capacitive touch screen sensor provided by the invention covers the All Ranges except via hole on the first conductive layer; make capacitive touch screen sensor of the present invention compared with transmitance is higher in theory capacitive touch screen sensor; the etching difficulty of the first insulation course reduces; more easily realize commercial production; improve product percent of pass; and can effectively protect the first conductive layer, thereby be conducive to improve the quality of product.
Brief description of the drawings
Fig. 1 is the planimetric map of existing conventional capacitive touch screen sensor;
Fig. 2 is the sectional view of existing conventional capacitive touch screen sensor;
Fig. 3 is the planimetric map of the capacitive touch screen sensor that transmitance is higher in theory;
Fig. 4 is the sectional view of the capacitive touch screen sensor that transmitance is higher in theory;
Fig. 5 is the planimetric map of capacitive touch screen sensor of the present invention;
Fig. 6 is the sectional view of capacitive touch screen sensor of the present invention;
Fig. 7 is the method for making process flow diagram of capacitive touch screen sensor of the present invention.
Description of reference numerals
10,20,30 substrates
11,21,31 first conductive layers
12,22,32 first insulation courses
13,23,33 second conductive layers
14,24,34 second insulation courses
15,35 via holes
13A, 23A, 33A the second transverse conductance layer
13B, 23B, the longitudinal conductive layer of 33B second
Embodiment
Relevant the technical content and a detailed description, coordinate brief description of the drawings as follows, but appended accompanying drawing only provides reference and explanation use, is not used for the present invention to be limited.
Basic thought of the present invention is, by reducing the area coverage of the first insulation course in touch panel sensor, reduces total thicknesses of layers of touch panel sensor, thereby improves the transmittance of touch panel sensor, avoids adopting SiN
xduring as the first insulation course, touch-screen has compared with dark colour problem; simultaneously; make the first insulation course cover the All Ranges except via hole on the first conductive layer; reduce the etching technics difficulty of the first insulation course; more easily realize commercial production; and can effectively protect the first conductive layer, thereby improve the quality of products.
Fig. 5 and Fig. 6 are planimetric map and the sectional view of capacitive touch screen sensor of the present invention.As shown in Figures 5 and 6, touch panel sensor of the present invention comprises from bottom to top: substrate 30, be positioned at first conductive layer 31 on substrate 30 surfaces, be positioned at the first insulation course 32 on the first conductive layer 31 and substrate 30, be positioned at the first insulation course 32, the second conductive layer 33 on the first conductive layer 31 and substrate 30 and be positioned at the second conductive layer 33 and the first insulation course 32 on the second insulation course 34, wherein, the second conductive layer 33 comprises the second transverse conductance layer 33A and second longitudinal conductive layer 33B, the second transverse conductance layer 33A and second longitudinal conductive layer 33B separate by the second insulation course 34, the direct conducting of second longitudinal conductive layer 33B, the second transverse conductance layer 33A connects by metal/the second conductive layer bridge, the first insulation course 32 is provided with via hole 35, between the second transverse conductance layer 33A of the first conductive layer 31 and the second conductive layer 33, be communicated with by via hole 35.
It should be noted that, the direct conducting of second longitudinal conductive layer 33B is only shown in Fig. 5 and Fig. 6, the example that the second transverse conductance layer 33A is communicated with the first conductive layer 31 by via hole 35, also can be set to the direct conducting of the second transverse conductance layer 33A, second longitudinal conductive layer 33B is communicated with the first conductive layer 31 by via hole 35, no longer describes in detail herein.
The first insulation course 32 is set at least cover the All Ranges except via hole 35 on the first conductive layer 31, and cover part substrate surface.Compared with the structure (referring to Fig. 1 and Fig. 2) of existing conventional capacitive touch screen sensor, the area coverage of the first insulation course 32 of capacitive touch screen sensor of the present invention is less, at least cover on the first conductive layer 31 outside the All Ranges except via hole 35 ensureing, can select according to actual conditions the subregion on substrate 30 surfaces that covered by the first insulation course 32, the overall area coverage of the first insulation course 32 is reduced, thereby reduce total thicknesses of layers of touch panel sensor, improve the transmitance of touch panel sensor entirety, can avoid adopting SiN simultaneously
xduring as the first insulation course, touch-screen has compared with dark colour problem.In addition; compared with the structure (referring to Fig. 3 and Fig. 4) of the capacitive touch screen sensor that transmitance is higher in theory; the first insulation course of capacitive touch screen sensor of the present invention covers the All Ranges except via hole on the first conductive layer; more being conducive to provides sufficient protection for the first conductive layer; improve the quality of products; while avoiding etching the first insulation course by the first conductive layer etching; reduce the etching difficulty of the first insulation course 32; make capacitive touch screen of the present invention more easily realize commercial production, be conducive to improve product percent of pass.
The material of the first insulation course of the present invention and the second insulation course can select the conventional material in this area to make, and preferably adopts transparent material to make, as SiN
xor SiO
2deng.In addition, the shape of the second conductive layer of capacitive touch screen sensor of the present invention can be rhombus (as shown in Figures 5 and 6), but the shape of the second conductive layer 33 is not limited in rhombus, also can be other shape, as rectangle, circle, ellipse, triangle etc., can be according to actual conditions, select appropriate shape.
The second conductive of capacitive touch screen sensor of the present invention can be the conventional material in this area, as tin indium oxide (ITO) etc.
The structure of capacitive touch screen sensor of the present invention is not limited in the first conductive layer and the second conductive layer by the bridging structure (as shown in Fig. 5 and Fig. 6) of the second conductive layer (as the ITO) conducting in via hole, also applicable to the bridging structure of other SITO, if the first conductive layer and the second conductive layer are by the bridge construction of the metal conduction in via hole.
The present invention further provides a kind of method for making of capacitive touch screen sensor, as shown in Figure 7, method comprises the following steps:
Step a, at substrate 30 surface deposition the first conductive layers 31, forms the first conducting layer figure (referring to the 1a in Fig. 7) by etching;
Step b, on completing steps a substrate after treatment, deposit the first insulation course 32, form the first insulation course figure by etching, on the first insulation course 32 after etching, be formed with via hole 35, and the first insulation course 32 after etching at least covers the All Ranges except via hole 35 on the first conductive layer 32, and the part surface of covered substrate 30, and be arranged in (referring to the 1b of Fig. 7) on the first conductive layer 31 and substrate 30;
Step c, on completing steps b substrate after treatment, deposit the second conductive layer 33, form the second conducting layer figure by etching, the second conductive layer 33 after etching is positioned on the first insulation course 32, the first conductive layer 31 and substrate 30, and the second conductive layer 33 is communicated with (referring to the 1c in Fig. 7) with the first conductive layer 31 by via hole 35; And
Steps d deposits the second insulation course 34 (referring to the 1d in Fig. 7) on completing steps c substrate 30 after treatment.
In above-mentioned steps b, can select the conventional material in this area to make the first insulation course, as SiN
xor SiO
2deng.
In above-mentioned steps c, the second conductive layer 33 after etching comprises the second transverse conductance layer 33A and second longitudinal conductive layer 33B, the second transverse conductance layer 33A or second longitudinal conductive layer 33B are communicated with the first conductive layer 31 by via hole 35, the direct conducting of second longitudinal conductive layer 33B is only shown in Fig. 7, the example that the second transverse conductance layer 33A is communicated with the first conductive layer 31 by via hole 35, also can be set to the direct conducting of the second transverse conductance layer 33A, second longitudinal conductive layer 33B is communicated with the first conductive layer 31 by via hole 35.The shape of the second conductive layer 33 after etching can be rhombus, rectangle, circle, ellipse or triangle etc., can be according to actual conditions, select appropriate shape, and other the second conductive can be the conventional material in this area, as ITO etc.
In above-mentioned steps d, can select the conventional material in this area to make the first insulation course, as SiN
xor SiO
2deng.
In above-mentioned steps a-d, can adopt the conventional equipment in this area to deposit and etching layers of material, the capacitive touch screen sensor of making according to said method is identical with composition and the structure of capacitive touch screen sensor provided by the invention, concrete structure can, with reference to the aforementioned description to capacitive touch screen sensor of the present invention, repeat no more herein.
To sum up, the present invention is set at least cover the All Ranges except via hole on the first conductive layer by the area of the first insulation course of capacitive touch screen sensor, and the subregion on covered substrate surface, the overall area coverage of the first insulation course is reduced, thereby reduce total thicknesses of layers of touch panel sensor, improve the transmitance of touch panel sensor entirety, avoided adopting SiN
xduring as the first insulation course, touch-screen has compared with dark colour problem, makes the etching difficulty of the first insulation course reduce simultaneously, more easily realizes commercial production, improves product percent of pass, and can effectively protect the first conductive layer, thereby be conducive to improve the quality of product.
These are only preferred embodiment of the present invention, non-in order to limit the scope of the claims of the present invention, other uses the equivalence of patent spirit of the present invention to change, and is all encompassed in the scope of the claims of the present invention.
Claims (6)
1. a capacitive touch screen sensor, is characterized in that, comprising:
Substrate,
Be positioned at the first conductive layer of substrate surface,
Be positioned at the first insulation course on described the first conductive layer and described substrate,
Be positioned at the second conductive layer on described the first insulation course, described the first conductive layer and described substrate, and
Be positioned at the second insulation course on described the second conductive layer and described the first insulation course;
Wherein, described the first insulation course is provided with via hole, described the second conductive layer is communicated with by described via hole with described the first conductive layer, and described the first insulation course is set at least cover the All Ranges except described via hole on described the first conductive layer, and cover part substrate surface.
2. capacitive touch screen sensor according to claim 1, it is characterized in that, described the second conductive layer comprises the second transverse conductance layer and second longitudinal conductive layer, and described the second transverse conductance layer or described second longitudinal conductive layer are communicated with described the first conductive layer by described via hole.
3. capacitive touch screen sensor according to claim 1 and 2, is characterized in that, the material of described the first insulation course and/or described the second insulation course is SiN
xor SiO
2.
4. a method for making for capacitive touch screen sensor, is characterized in that, comprises the following steps:
Step a, deposits the first conductive layer at substrate surface, forms the first conducting layer figure by etching;
Step b, on completing steps a substrate after treatment, deposit the first insulation course, form the first insulation course figure by etching, on the first insulation course after etching, be formed with via hole, and the first insulation course after etching at least covers the All Ranges except via hole on the first conductive layer, and cover part substrate surface, and be positioned on the first conductive layer and substrate;
Step c, on completing steps b substrate after treatment, deposit the second conductive layer, form the second conducting layer figure by etching, the second conductive layer after etching is positioned on the first insulation course, the first conductive layer and substrate, and the second conductive layer is communicated with by via hole with the first conductive layer; And
Steps d deposits the second insulation course on completing steps c substrate after treatment.
5. method for making according to claim 4, it is characterized in that, in step c, the second conductive layer after described etching comprises the second transverse conductance layer and second longitudinal conductive layer, and described the second transverse conductance layer or described second longitudinal conductive layer are communicated with described the first conductive layer by via hole.
6. according to the method for making described in claim 4 or 5, it is characterized in that, the material of described the first insulation course and/or described the second insulation course is SiN
xor SiO
2.
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| CN103941930B CN103941930B (en) | 2017-09-05 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI755961B (en) * | 2019-12-27 | 2022-02-21 | 南韓商Ｌｇ顯示器股份有限公司 | Touch display apparatus having a light-emitting device and a touch structure |
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| CN101630215A (en) * | 2009-06-29 | 2010-01-20 | 深圳莱宝高科技股份有限公司 | Capacitance type touch screen and manufacturing method thereof |
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| TWI755961B (en) * | 2019-12-27 | 2022-02-21 | 南韓商Ｌｇ顯示器股份有限公司 | Touch display apparatus having a light-emitting device and a touch structure |
| US11301073B2 (en) | 2019-12-27 | 2022-04-12 | Lg Display Co., Ltd. | Touch display apparatus having a light-emitting device and a touch structure |
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| Publication number | Publication date |
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| CN103941930B (en) | 2017-09-05 |
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