CN103937190B - A kind of electrostatic infrared thermal radiation optics PC material and preparation method and application - Google Patents
A kind of electrostatic infrared thermal radiation optics PC material and preparation method and application Download PDFInfo
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Abstract
The invention discloses a kind of electrostatic infrared thermal radiation optics PC material and preparation method and application, the mass percent that described optics PC material accounts for optics PC material by its each component prepares primarily of following raw material: polycarbonate 93 ~ 98%, polyaniline 1 ~ 3 ‰ and organosilicon 1 ~ 6%, and the mass percent sum of each component of described optics PC material is 100%.Optics PC material of the present invention has high transparency, excellent ageing-resistant and antistatic property concurrently, and form infrared rays in penetrating by light is well-illuminated between the LED usage period the heat radiation of inside to optics PC material outer, solve the heat dissipation problem of LED, extend the work-ing life of LED chip, and do not affect the optical throughput of optics PC material, can be used for the lampshade of illumination optical product.
Description
Technical field
The present invention relates to a kind of optics PC material, preparation method and application thereof, be specifically related to a kind of electrostatic infrared thermal radiation optics PC material and preparation method and application.
Background technology
The heat radiation of LED is now more and more by people are paid attention to, this is because the light decay of LED or its life-span are directly relevant with its junction temperature, bad junction temperature of dispelling the heat is just high, and the life-span is just short, often reduces by 10 DEG C of life-spans can extend 2 times according to A Leiniusi rule temperature.The light decay issued as can be seen from Cree company and the relation of junction temperature, if junction temperature can control at 65 DEG C, so the life-span of its light decay to 70% can up to 100,000 hours.But the heat radiation of the LED of existing reality does not reach the temperature of this requirement far away, thus the life-span of LED lamp become the subject matter that one affects its performance.And junction temperature not only affects the long-time life-span, yet directly affect the luminous efficiency of short period of time.
The increase of LED lamp unit optical throughput can make every unit thermal value significantly rise, LED chip is made to produce high heat in minimum volume, and the thermal capacity of LED itself is very little, so these heat conduction must be gone out with the fastest speed, otherwise very high junction temperature will be produced, LED emitting components luminosity factor is decayed, reduction of service life.In order to as much as possible heat is drawn out to outside chip, can adopt the better baseplate material of thermal conductivity, to solve the problem of its heat radiation, but effect is not clearly.
CN103044889A discloses a kind of extrusion grade heat conductive polycarbonate material for LED and preparation method thereof, and it is made up of the raw material of following weight part: polycarbonate 50 ~ 65 parts, toughner 4 ~ 6 parts, thermal conducting agent 30 ~ 40 parts, antioxidant A0.1 ~ 0.2 part, antioxidant B0.1 ~ 0.2 part, lubricant 0.5 ~ 1.5 part, coupling agent 0.3 ~ 0.8 part, 1.5 ~ 3.0 parts, whitening agent.The heat conductive polycarbonate material of this invention, can spread with common light PC becomes translucent effect in the lump LED lamp tube by co-extrusion technology simultaneous manufacturing.The product of the prior art oneself be used in photovoltaic industry and be applied in LED illumination System, but in LED industry uses, along with the violent speed development of global technology, common PC cannot meet the heat dissipation problem to optics LED chip and driving power, the energy-saving and emission-reduction in photovoltaic industry and application cannot be met, limit the application in its light efficiency and life-span.
Summary of the invention
For the problem of prior art, an object of the present invention is to provide a kind of electrostatic infrared thermal radiation optics PC material, and the mass percent that described optics PC material accounts for optics PC material by its each component prepares primarily of following raw material:
Polycarbonate 93 ~ 98%
Polyaniline 1 ~ 3 ‰
Organosilicon 1 ~ 6%
Described organosilicon prepares by the following method:
Under nitrogen protection, be the Nano-meter SiO_2 of 7:3 by mass ratio
2powder and silicone fluid add in reactor, and setting temperature of reaction kettle is 60 ~ 80 DEG C, in the rotating speed of 80r/min, make Nano-meter SiO_2
2powder is dissolved in silicone fluid, to realize the purity that silicone content can reach more than 99.9%, then, after reacting 5h under agitation, in reactor, the N of the water-soluble metasilicate of 1 ~ 3% of organosilicon liquid weight and 1 ~ 3% of organosilicon liquid weight is added successively
2o, be hydrolyzed reaction 5 ~ 8h, the material in aqueous solution water glass and reactor is made to carry out abundant affine optimization, promote combining closely of the reaction product of water glass and silicon-dioxide and silicone fluid, increase material infrared rays usefulness, obtain the clear viscous shape liquid silicone with ultra-red ray effect.
The mass percent sum of each component of described optics PC material is 100%.
Optics PC material of the present invention has transparent infrared emanation and ageing-resistant performance, between the LED usage period, light is well-illuminated penetrate in form infrared rays the heat radiation of inside to optics PC material outer, solve the heat dissipation problem of LED.
By the LED chip of 7.3W power, 0.55 power factor, be encapsulated in the middle of bulb lamp heat radiator shell in upper transverse plane, portion encapsulates the transparent diffusion shell of electrostatic infrared emanation optics PC of the present invention and throws light on as lampshade.
Input 220V voltage also controls electric current at 350mA, and in use chip moment is luminous; Produce several ten thousand to millions of atomerg wave bands in chip per second interactive, heat assembles sharp increase instantaneously; The light efficiency that chip produces is penetrated away by PC lampshade, the heat major part of chip light source generation is simultaneously outside to optics PC material housing by infrared radiation instantaneously, conscientiously solve index and the gordian technique of the heat radiation of photoelectricity LED lamp cover and optics light efficiency, by PC lampshade largest light intensity be; 151, the light of cd, PC lampshade is well-illuminated for 627lm, angle, half of peak is: H.130.6 ° V.132.1 °, width of light beam is: H.180.0 ° V.180.0 °, light efficiency is: 86.Lm/w., correlated(color)temperature are: 6560k, colour rendering index are: within Ra ≡ 84, heat extraction coefficient are less than common PC lampshade≤5 DEG C, extend the work-ing life of LED chip, and the light not affecting optics PC material is well-illuminated.
Described temperature of reaction is 61 DEG C, 62 DEG C, 63 DEG C, 64 DEG C, 65 DEG C, 66 DEG C, 67 DEG C, 68 DEG C, 69 DEG C, 70 DEG C, 71 DEG C, 72 DEG C, 73 DEG C, 74 DEG C, 75 DEG C, 76 DEG C, 77 DEG C, 78 DEG C or 79 DEG C.
The add-on of described water-soluble metasilicate is 1 ~ 3% of organosilicon liquid weight, such as 1.1%, 1.2%, 1.3%, 1.4%, 1.5%, 1.6%, 1.7%, 1.8%, 1.9%, 2%, 2.1%, 2.2%, 2.3%, 2.4%, 2.5%, 2.6%, 2.7%, 2.8% or 2.9%.
Described N
2the add-on of O is 1 ~ 3% of organosilicon liquid weight, such as 1.1%, 1.2%, 1.3%, 1.4%, 1.5%, 1.6%, 1.7%, 1.8%, 1.9%, 2%, 2.1%, 2.2%, 2.3%, 2.4%, 2.5%, 2.6%, 2.7%, 2.8% or 2.9%.
In above-mentioned organosilyl preparation method, in 5h hour in reaction process through vacuumizing, the about loss of material 0.3%.
Preferably, the condition of described stirring is 100 ~ 300r/min, preferred 200r/min.
The mass percent of described polycarbonate is 93 ~ 98%, such as 93.3%, 93.6%, 93.9%, 94.2%, 94.5%, 94.8%, 95.1%, 95.4%, 95.7%, 96%, 96.3%, 96.6%, 96.9%, 97.2%, 97.5% or 97.8%.
In order to protect electronic component from electrostatic breakdown, described optics PC material is added with polyaniline.The mass percent of described polyaniline is such as 1.2 ‰, 1.4 ‰, 1.6 ‰, 1.8 ‰, 2 ‰, 2.2 ‰, 2.4 ‰, 2.6 ‰ or 2.8 ‰.The addition of polyaniline is too little, and it cannot play the effect improving antistatic effect, and the addition of polyaniline is too large, then can affect transparency and the aberration of optics PC material.The present invention adopts the polyaniline of this addition, both can improve antistatic effect, makes the surface resistivity of optics PC material reach 10
12about Ω, electrostatic is made effectively slowly to be dissipated in the earth, keep the long term life of electronic component, and do not affect the transparency of optics PC material and look becomes, makes optics PC material have anti-static function further, effectively can control that product surface is bright and clean does not absorb the effects such as bonding dust.
By described organosilicon and PC blended, the object of resin base material performance can be improved comprehensively, make the finer and close details of material volume and surface and smooth finish, frictional coefficient diminishes, molecular weight improves, strengthen modulus and toughness, high strength, anti-wear, and water resistance and anti-ageing-resistantly to significantly improve, solvent resistant and resistance to migration can significantly improve, especially light infrared emanation effect is very remarkable, the percent mass ratio simultaneously added, as being followed successively by 1.3%, 1.6%, 1.9%, 2.2%, 2.5%, 2.8%, 3.1%, 3.4%, 3.6%, 3.8%, 4%, 4.2%, 4.4%, 4.6%, 4.8%, 5%, 5.2%, 5.4%, 5.6% or 5.8%.Organosilyl addition is too large, then can affect transparency and the aberration of optics PC material.
Preferably, the mass percent that described optics PC material accounts for optics PC material by its each component prepares primarily of following raw material:
Polycarbonate 93 ~ 97%
Polyaniline 1.2 ~ 2.8 ‰
Organosilicon 1.5 ~ 5.5%
The mass percent sum of each component of described optics PC material is 100%.
Preferably, the mass percent that described optics PC material accounts for optics PC material by its each component prepares primarily of following raw material:
Polycarbonate 94 ~ 96.5%
Polyaniline 1.5 ~ 2.5 ‰
Organosilicon 2 ~ 5%
The mass percent sum of each component of described optics PC material is 100%.
Preferably, the particle diameter of described polyaniline is 5 ~ 6 μm.The particle diameter of polyaniline is excessive, can affect transparency and the aberration of optics PC material, makes the optics PC material that cannot obtain high-clarity.
Preferably, described organosilyl particle diameter is less than 5 μm, preferably 1 ~ 3 μm.Organosilyl particle diameter is excessive, can affect transparency and the aberration of optics PC material, makes the optics PC material that cannot obtain high-clarity.
Two of object of the present invention is the preparation method providing a kind of infrared thermal radiation optics PC material as above, and described method comprises the steps:
By each raw material mixing of formula ratio, then extruded by twin screw extruder by the homogeneous material obtained after mixing, granulation, obtains electrostatic infrared thermal radiation optics PC material.
Described mixing realizes by high temperature mixing equipment, at 180 ~ 200 DEG C, makes each material present semi-melting state, again material is passed through cyrogenic equipment subsequently, makes it cool, be frozen into block, enter airflow strikes crusher and carry out fragmentation.Then the homogeneous material obtained is extruded by twin screw extruder, granulation, obtain electrostatic infrared thermal radiation optics PC material.
The each district temperature controlling twin screw extruder is 255 ~ 270 DEG C, totally 11st district, and specifically in twin screw extruder, course is as follows:
Material enters transportation section through [district] melting, [2nd districts] mixing section, [3rd districts] forces conversion zone, conveying compression section, [4th districts] exhaust section, [5th districts] section of shearing, [6th districts] blended melting transportation section, [7th districts] arranges composite log in the same way, [8th districts] forces orderly cure profile mixing section, [9th districts] section of vacuumizing, [tenth districts] carries compression section, [Shi Yiqu] pressure die head discharging section, divide wire bracing, tank cools, then granulator granulation is entered, obtain electrostatic infrared thermal radiation optics PC material.
Three of object of the present invention is the purposes providing a kind of electrostatic infrared thermal radiation optics PC material as above, and described infrared thermal radiation optics PC material is used for the lampshade of illumination optical product.
The preferred LED of described illumination optical product.
Compared with the prior art, the present invention has following beneficial effect:
Optics PC material of the present invention has high transparency, excellent ageing-resistant and antistatic property concurrently, and form infrared rays in being penetrated by optical throughput between the LED usage period the heat radiation of inside to optics PC material outer, solve the heat dissipation problem of LED, extend the work-ing life of LED chip, and do not affect the optical throughput of optics PC material.
Preparation method of the present invention is simple to operate, and production cost is low, the even requirement reaching photovoltaic industry of every high-performance overall target, especially makes product and plays infrared light thermal radiation useful effect, extends LED light effect and the use in life-span, is conducive to penetration and promotion.In the optically transparent material of the polycarbonate of current worldwide production, there is not infrared light thermal radiation function, therefore, the invention solves all indeterminable technical problem of prior art.
Embodiment
Technical scheme of the present invention is further illustrated below by embodiment.
Embodiment 1
A kind of electrostatic infrared thermal radiation optics PC material, the mass percent that described optics PC material accounts for optics PC material by its each component prepares primarily of following raw material:
Polycarbonate 93.997%
Polyaniline 3 ‰
Organosilicon 6%.
Described organosilicon is prepared by method as described below:
Under nitrogen protection, be the Nano-meter SiO_2 of 7:3 by mass ratio
2powder and silicone fluid add in reactor, and setting temperature of reaction kettle is 60 ~ 80 DEG C, in the rotating speed of 80r/min, make Nano-meter SiO_2
2powder is dissolved in silicone fluid, after then reacting 5h under rotating speed is 100r/min, adds the N of the water-soluble metasilicate of 1 ~ 3% of organosilicon liquid weight and 1 ~ 3% of organosilicon liquid weight in reactor successively
2o, be hydrolyzed reaction 5 ~ 8h, obtains clear viscous shape liquid silicone.
The particle diameter of described polyaniline is 5 ~ 6 μm.
Described organosilyl particle diameter is less than 5 μm.
The preparation method of electrostatic infrared thermal radiation optics PC material as above, described method comprises the steps:
By each raw material mixing of formula ratio, then extruded by twin screw extruder by the homogeneous material obtained after mixing, granulation, obtains electrostatic infrared thermal radiation optics PC material.
Embodiment 2
A kind of electrostatic infrared thermal radiation optics PC material, the mass percent that described optics PC material accounts for optics PC material by its each component prepares primarily of following raw material:
Polycarbonate 98.999%
Polyaniline 1 ‰
Organosilicon 1%
Described organosilicon is prepared by method as described below:
Under nitrogen protection, be the Nano-meter SiO_2 of 7:3 by mass ratio
2powder and silicone fluid add in reactor, and setting temperature of reaction kettle is 60 ~ 80 DEG C, in the rotating speed of 80r/min, make Nano-meter SiO_2
2powder is dissolved in silicone fluid, after then reacting 5h under rotating speed is 200r/min, adds the N of the water-soluble metasilicate of 1 ~ 3% of organosilicon liquid weight and 1 ~ 3% of organosilicon liquid weight in reactor successively
2o, be hydrolyzed reaction 5 ~ 8h, obtains clear viscous shape liquid silicone.
The particle diameter of described polyaniline is 5 ~ 6 μm.
Described organosilyl particle diameter is less than 5 μm.
The preparation method of electrostatic infrared thermal radiation optics PC material as above, described method comprises the steps:
By each raw material mixing of formula ratio, then extruded by twin screw extruder by the homogeneous material obtained after mixing, granulation, obtains electrostatic infrared thermal radiation optics PC material.
Embodiment 3
A kind of electrostatic infrared thermal radiation optics PC material, the mass percent that described optics PC material accounts for optics PC material by its each component prepares primarily of following raw material:
Polycarbonate 96.998%
Polyaniline 2 ‰
Organosilicon 3%
Described organosilicon is prepared by method as described below:
Under nitrogen protection, be the Nano-meter SiO_2 of 7:3 by mass ratio
2powder and silicone fluid add in reactor, and setting temperature of reaction kettle is 60 ~ 80 DEG C, in the rotating speed of 80r/min, make Nano-meter SiO_2
2powder is dissolved in silicone fluid, after then reacting 5h under rotating speed is 300r/min, adds the N of the water-soluble metasilicate of 1 ~ 3% of organosilicon liquid weight and 1 ~ 3% of organosilicon liquid weight in reactor successively
2o, be hydrolyzed reaction 5 ~ 8h, obtains clear viscous shape liquid silicone.
The particle diameter of described polyaniline is 5 ~ 6 μm.
Described organosilyl particle diameter is less than 5 μm.
The preparation method of electrostatic infrared thermal radiation optics PC material as above, it is characterized in that, described method comprises the steps:
By each raw material mixing of formula ratio, then extruded by twin screw extruder by the homogeneous material obtained after mixing, granulation, obtains electrostatic infrared thermal radiation optics PC material.
Embodiment 4
A kind of electrostatic infrared thermal radiation optics PC material, the mass percent that described optics PC material accounts for optics PC material by its each component prepares primarily of following raw material:
Polycarbonate 95.985%
Polyaniline 1.5 ‰
Organosilicon 4%.
Described organosilicon is prepared by method as described below:
Under nitrogen protection, be the Nano-meter SiO_2 of 7:3 by mass ratio
2powder and silicone fluid add in reactor, and setting temperature of reaction kettle is 60 ~ 80 DEG C, in the rotating speed of 80r/min, make Nano-meter SiO_2
2powder is dissolved in silicone fluid, after then reacting 5h under rotating speed is 200r/min, adds the N of the water-soluble metasilicate of 1 ~ 3% of organosilicon liquid weight and 1 ~ 3% of organosilicon liquid weight in reactor successively
2o, be hydrolyzed reaction 5 ~ 8h, obtains clear viscous shape liquid silicone.
The particle diameter of described polyaniline is 5 ~ 6 μm.
Described organosilyl particle diameter is less than 5 μm.
The preparation method of electrostatic infrared thermal radiation optics PC material as above, described method comprises the steps:
By each raw material mixing of formula ratio, then extruded by twin screw extruder by the homogeneous material obtained after mixing, granulation, obtains electrostatic infrared thermal radiation optics PC material.
Embodiment 5
A kind of electrostatic infrared thermal radiation optics PC material, the mass percent that described optics PC material accounts for optics PC material by its each component prepares primarily of following raw material:
Polycarbonate 94.975%
Polyaniline 2.5 ‰
Organosilicon 5%.
Described organosilicon is prepared by method as described below:
Under nitrogen protection, be the Nano-meter SiO_2 of 7:3 by mass ratio
2powder and silicone fluid add in reactor, and setting temperature of reaction kettle is 60 ~ 80 DEG C, in the rotating speed of 80r/min, make Nano-meter SiO_2
2powder is dissolved in silicone fluid, after then reacting 5h under rotating speed is 200r/min, adds the N of the water-soluble metasilicate of 1 ~ 3% of organosilicon liquid weight and 1 ~ 3% of organosilicon liquid weight in reactor successively
2o, be hydrolyzed reaction 5 ~ 8h, obtains clear viscous shape liquid silicone.
The particle diameter of described polyaniline is 5 ~ 6 μm.
Described organosilyl particle diameter is 1 ~ 3 μm.
The preparation method of electrostatic infrared thermal radiation optics PC material as above, described method comprises the steps:
By each raw material mixing of formula ratio, then extruded by twin screw extruder by the homogeneous material obtained after mixing, granulation, obtains electrostatic infrared thermal radiation optics PC material.
Carry out performance test to PC material of the present invention, result is as follows:
Applicant states, the present invention illustrates method detailed of the present invention by above-described embodiment, but the present invention is not limited to above-mentioned method detailed, does not namely mean that the present invention must rely on above-mentioned method detailed and could implement.Person of ordinary skill in the field should understand, any improvement in the present invention, to equivalence replacement and the interpolation of ancillary component, the concrete way choice etc. of each raw material of product of the present invention, all drops within protection scope of the present invention and open scope.
Claims (11)
1. an electrostatic infrared thermal radiation optics PC material, is characterized in that, the mass percent that described optics PC material accounts for optics PC material by its each component prepares primarily of following raw material:
Polycarbonate 93 ~ 98%
Polyaniline 1 ~ 3 ‰
Organosilicon 1 ~ 6%;
Described organosilicon prepares by the following method:
Under nitrogen protection, be the Nano-meter SiO_2 of 7:3 by mass ratio
2powder and silicone fluid add in reactor, and setting temperature of reaction kettle is 60 ~ 80 DEG C, in the rotating speed of 80r/min, make Nano-meter SiO_2
2powder is dissolved in silicone fluid, after then reacting 5h under agitation, adds the N of the water-soluble metasilicate of 1 ~ 3% of organosilicon liquid weight and 1 ~ 3% of organosilicon liquid weight in reactor successively
2o, be hydrolyzed reaction 5 ~ 8h, obtains clear viscous shape liquid silicone;
The mass percent sum of each component of described optics PC material is 100%.
2. optics PC material as claimed in claim 1, it is characterized in that, the mass percent that described optics PC material accounts for optics PC material by its each component prepares primarily of following raw material:
Polycarbonate 93 ~ 97%
Polyaniline 1.2 ~ 2.8 ‰
Organosilicon 1.5 ~ 5.5%;
The mass percent sum of each component of described optics PC material is 100%.
3. optics PC material as claimed in claim 1 or 2, it is characterized in that, the mass percent that described optics PC material accounts for optics PC material by its each component prepares primarily of following raw material:
Polycarbonate 94 ~ 96.5%
Polyaniline 1.5 ~ 2.5 ‰
Organosilicon 2 ~ 5%;
The mass percent sum of each component of described optics PC material is 100%.
4. the optics PC material as described in one of claim 1-2, is characterized in that, the rotating speed of described stirring is 100 ~ 300r/min.
5. optics PC material as claimed in claim 4, is characterized in that, the rotating speed 200r/min of described stirring.
6. the optics PC material as described in one of claim 1-2, is characterized in that, the particle diameter of described polyaniline is 5 ~ 6 μm.
7. the optics PC material as described in one of claim 1-2, is characterized in that, described organosilyl particle diameter is less than 5 μm.
8. optics PC material as claimed in claim 7, it is characterized in that, described organosilyl particle diameter is 1 ~ 3 μm.
9. a preparation method for the electrostatic infrared thermal radiation optics PC material as described in one of claim 1-8, it is characterized in that, described method comprises the steps:
By each raw material mixing of formula ratio, then extruded by twin screw extruder by the homogeneous material obtained after mixing, granulation, obtains electrostatic infrared thermal radiation optics PC material.
10. a purposes for the electrostatic infrared thermal radiation optics PC material as described in one of claim 1-8, is characterized in that, described electrostatic infrared thermal radiation optics PC material is used for the lampshade of illumination optical product.
11. purposes as claimed in claim 10, it is characterized in that, described illumination optical product is LED.
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| CN103044889A (en) * | 2012-12-31 | 2013-04-17 | 广东银禧科技股份有限公司 | LED lamp used extrusion grade heat-conducting makrolon material and preparation method thereof |
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