CN103928358A - Method for transferring vertical carbon nano tube array to metal substrate - Google Patents
Method for transferring vertical carbon nano tube array to metal substrate Download PDFInfo
- Publication number
- CN103928358A CN103928358A CN201410145640.1A CN201410145640A CN103928358A CN 103928358 A CN103928358 A CN 103928358A CN 201410145640 A CN201410145640 A CN 201410145640A CN 103928358 A CN103928358 A CN 103928358A
- Authority
- CN
- China
- Prior art keywords
- carbon nano
- metal substrate
- nano tube
- vertical
- tube array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
- H01L21/7813—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
Abstract
The invention provides a method for transferring a vertical carbon nano tube array to a metal substrate. Firstly, nano metal particles are sputtered to the end of a vertical orientated carbon nano tube array manufactured on the basis of the chemical vapor deposition method, then the target metal substrate is transferred for alignment, a certain amount of pressure is exerted, bonding of carbon nano tubes and the metal substrate is achieved by means of the local sensing heating method, finally the substrate where the carbon nano tubes grow is stripped, and namely the vertical carbon nano tube array is transferred to the metal substrate. The method for transferring the vertical carbon nano tube array to the metal substrate is easy to operate, a local non-contacting heating mode has small damage to a device, and the method is suitable for transferring a large-area carbon nano tube film, and has a wide application prospect in the field of carbon nano tube devices and electronic packaging heat interface materials.
Description
technical field
The invention belongs to micro-nano system and manufacture field, particularly relate to a kind of method that vertical carbon nanotube array shifts to metal substrate.
background technology
Carbon nano-tube has unique nanometer one-dimensional space structure and significant mechanics, calorifics and electrology characteristic, in integrated circuit, MEMS (micro electro mechanical system) and micro-system encapsulation, be with a wide range of applications, especially the development of the preparation method of carbon nano-tube based on chemical vapor deposition (CVD), for the carbon nano-tube of batch production rock-steady structure, realization is determined carbon nano-tube large-scale application and is laid a good foundation.
Based on CVD method, prepare vertical orientation carbon nano pipe array, and for electrical interconnection medium and hot interface (TIM) material, be the common type of carbon nano-tube application, its core feature is to form metal-carbon nanotube-metal three-decker.Because CVD method is prepared carbon nano-tube and need to be carried out in the hot environment of 500 ℃ of left and right, incompatible with microelectronic technique, and can introduce chemical pollutant, affect the overall performance of device, cause needing the carbon nano-tube film of having prepared is transferred under low-temp low-pressure condition the metal level substrate of device in application on substrate.Main thermocompression bonding method and the chemical transfer method of adopting, realizes carbon nano-tube film to the transfer of metallic substrates at present, and the subject matter that the former exists is that bonding temperature and pressure are all higher, generally more than 300 ℃, in application, can affect device performance; The latter utilizes in carbon nano tube surface and independently fills the chemical substance realization of close metal and the bonding of metallic substrates, the subject matter existing is in bonding process, to introduce organic chemicals, environment and device are caused to certain pollution, and the connection that chemical bonding forms built on the sand, be difficult to guarantee efficient power, electricity, heat interconnection.
Given this; by preparing nanometer metal structure in carbon nano tube surface; and using it as bonded layer; under certain pressure effect; utilize the method for local induction heating to realize the bonding of carbon nano-tube film and target substrate; effectively reduce process environments temperature, and nanoscale effect is more conducive to spread between atom, for carbon nano-tube provides new process in scale application.
summary of the invention
A kind of method that the object of the present invention is to provide vertical carbon nanotube array to shift to metallic substrates, in carbon nano tube surface, prepare nano metal layer as bonded layer, under certain pressure condition, utilize the method for local induction heating to realize bonding and the transfer of carbon nano-tube and metallic substrates.
The method that a kind of vertical carbon nanotube array that the present invention announces shifts to metal substrate, first the vertical orientation carbon nano pipe array end sputter nano-metal particle of preparing based on chemical gaseous phase depositing process, then aim at the metal substrate that diverts the aim, apply certain pressure, the method of recycling local induction heating realizes the bonding of carbon nano-tube and metal substrate, finally by the substrate desquamation of carbon nano-tube.Wherein the material of nano-metal particle is nickel, and the frequency of local induction heating is 13.56MHz.
The method that vertical carbon nanotube array provided by the invention shifts to metal substrate, technique is simple, easy to operate, noncontact heating, be applicable to scale device and implement batch process, and process environments temperature and pressure is lower, compatible with microelectronic technique, at micro-system manufacturing and three-dimension packaging field, be with a wide range of applications.
accompanying drawing explanation
Fig. 1 is vertical carbon nanotube array of the present invention to metal substrate shifting process schematic diagram: wherein 1 is vertical carbon nanotube array, and 2 is silicon substrate, and 3 is nano-metal particle, and 4 is pressure, and 5 is induction coil, and 6 is metal level, and 7 is device substrate.
embodiment
As shown in Figure 1, the key step of the specific embodiment of the invention comprises:
(1) adopt CVD method to prepare vertical carbon nanotube array.Growth apparatus adopts " Black Magic " system of German AIXTRON company, during carbon nano-tube is synthetic, underlayer temperature is between 450 ℃ to 560 ℃, catalyst adopts Al/Fe/Mo metal, first each metal level of sputter on silicon substrate, through overheated shaping, can on substrate, form the nanocluster of catalyst, so that growing oriented carbon nano pipe array.In growth, origin adopts C
2h
2gas, first in hot environment, (830 ℃) generate C by gas cracking
6h
9, C
5h
9deng gas, the substrate that lysate is passed into catalyst gets final product carbon nano-tube.In growth course, chamber pressure is 2 * 10
2mbar.
(2) carbon nano pipe array end nano-metal particle preparation.Utilize magnetron sputtering coater at vertical orientation carbon nano tube surface sputter Ni metal.In sputter, cavity air pressure is 5 * 10
3pa, underlayer temperature is 350K, sputtering time is 10 minutes.
(3) the thermocompression bonding technique based on induction heating.The structure that (2) are formed, through aiming at, nano particle is contacted with the metal substrate that diverts the aim (Au), be placed in high-frequency induction heating system (by induction power supply, inductor (coil), heated sample (device) and servicing unit (adaptation, water-cooling system, thermo detector, transmission line, sample transport mechanism etc.) form, the high frequency electric source frequency of high-frequency induction heating system is 13.56MHz, power output stage adopts cermet tetreode FU-100F, output power of power supply is adjustable between 1.6～1000W, polar plate voltage is adjustable between 100～2600V, impedance matching scope is (2.7～45) Ω-j(0～70) Ω) in the middle of induction coil, apply 2MPa pressure, 2 seconds heating times, pressure continues 30 minutes afterwards.
(4) growth substrates is peeled off.After step (3) completes, the silicon substrate of carbon nano-tube is peeled off, completed vertical carbon nanotube array to the transfer of metal substrate.
Claims (3)
1. the method that a vertical carbon nanotube array shifts to metal substrate, it is characterized in that the vertical orientation carbon nano pipe array end sputter nano-metal particle of preparing based on chemical gaseous phase depositing process, then aim at the metal substrate that diverts the aim, apply certain pressure, the method of recycling local induction heating realizes the bonding of carbon nano-tube and metal substrate, finally by the substrate desquamation of carbon nano-tube.
2. the method that a kind of vertical carbon nanotube array as claimed in claim 1 shifts to metal substrate, the nano-metal particle that it is characterized in that sputter is nickel (Ni).
3. the method that a kind of vertical carbon nanotube array as claimed in claim 1 shifts to metal substrate, the frequency that it is characterized in that induction heating is 13.56MHz.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410145640.1A CN103928358A (en) | 2014-04-14 | 2014-04-14 | Method for transferring vertical carbon nano tube array to metal substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410145640.1A CN103928358A (en) | 2014-04-14 | 2014-04-14 | Method for transferring vertical carbon nano tube array to metal substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103928358A true CN103928358A (en) | 2014-07-16 |
Family
ID=51146537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410145640.1A Pending CN103928358A (en) | 2014-04-14 | 2014-04-14 | Method for transferring vertical carbon nano tube array to metal substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103928358A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104229729A (en) * | 2014-08-21 | 2014-12-24 | 南京航空航天大学 | Method for transferring carbon nanotube vertical array to flexible polymer substrate |
| CN105439117A (en) * | 2014-09-19 | 2016-03-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | Rapid losses transfer method for large-area carbon nanotube vertical array |
| CN116741723A (en) * | 2023-08-14 | 2023-09-12 | 合肥阿基米德电子科技有限公司 | IGBT module and manufacturing process thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101747870A (en) * | 2009-12-18 | 2010-06-23 | 东南大学 | Preparation method, use method and preparation device of heat dissipation interface material |
| CN102417175A (en) * | 2011-09-02 | 2012-04-18 | 上海大学 | Transfer method of carbon nano tube bundle at room temperature |
| CN103367185A (en) * | 2013-07-25 | 2013-10-23 | 中国科学院微电子研究所 | Method for manufacturing carbon nano tube flexible micro-bumps through transfer method |
-
2014
- 2014-04-14 CN CN201410145640.1A patent/CN103928358A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101747870A (en) * | 2009-12-18 | 2010-06-23 | 东南大学 | Preparation method, use method and preparation device of heat dissipation interface material |
| CN102417175A (en) * | 2011-09-02 | 2012-04-18 | 上海大学 | Transfer method of carbon nano tube bundle at room temperature |
| CN103367185A (en) * | 2013-07-25 | 2013-10-23 | 中国科学院微电子研究所 | Method for manufacturing carbon nano tube flexible micro-bumps through transfer method |
Non-Patent Citations (1)
| Title |
|---|
| 宋晓辉: "《碳纳米管/金属界面键和机制及其相关技术研究》", 《中国博士学位论文全文数据库》 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104229729A (en) * | 2014-08-21 | 2014-12-24 | 南京航空航天大学 | Method for transferring carbon nanotube vertical array to flexible polymer substrate |
| CN105439117A (en) * | 2014-09-19 | 2016-03-30 | 中国科学院苏州纳米技术与纳米仿生研究所 | Rapid losses transfer method for large-area carbon nanotube vertical array |
| CN116741723A (en) * | 2023-08-14 | 2023-09-12 | 合肥阿基米德电子科技有限公司 | IGBT module and manufacturing process thereof |
| CN116741723B (en) * | 2023-08-14 | 2023-11-03 | 合肥阿基米德电子科技有限公司 | IGBT module and manufacturing process thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103183344B (en) | A kind of efficient cryogenic prepares the method for big size graphene | |
| CN104532206A (en) | Preparation method of graphene doped film growing on insulating substrate in in-situ growth mode | |
| CN103928358A (en) | Method for transferring vertical carbon nano tube array to metal substrate | |
| CN103194795B (en) | A kind of method of low-cost preparation of large-size monocrystal graphene | |
| Li et al. | Design of novel plasma reactor for diamond film deposition | |
| CN104036878A (en) | Preparation method of graphene-carbon nanotube three-dimensional structure material | |
| CN102807210B (en) | Method for preparing graphene by biomass derived carbonaceous mesophase | |
| CN103896207B (en) | A kind of carbon nano pipe array bonding method based on power electro thermal coupling | |
| US20130168229A1 (en) | Method of preparing graphene layer | |
| CN104229729A (en) | Method for transferring carbon nanotube vertical array to flexible polymer substrate | |
| CN108342716A (en) | Plasma enhanced chemical vapor deposition prepares the system and method for two-dimensional material | |
| CN105483824A (en) | Method for preparing monocrystal double-layer graphene | |
| CN102634776B (en) | Chemical vapor deposition device for continuously preparing two-dimensional nanofilm | |
| CN107204282A (en) | A kind of method based on non-self-supporting GaN to being sticked with standby Buddha's warrior attendant ground mass GaN | |
| CN103526187A (en) | Large-area microwave plasma chemical vapor deposition system | |
| CN105714265A (en) | Preparation method of boron-doped graphene film | |
| CN108622879B (en) | Dry contact transfer method of carbon nano tube vertical array | |
| CN105734524B (en) | Metallo-Organic Chemical Vapor precipitation equipment and the method for using the device | |
| CN103058193B (en) | Method for preparing silicon carbide nanowire by adopting metallic nickel or amorphous carbon lamination | |
| CN106315570A (en) | Method for fast low-temperature growing of various graphical three-dimensional graphenes | |
| CN103928359A (en) | Method of bonding vertical carbon nano tube array and metal substrate | |
| CN104709897A (en) | Process for preparing graphene through RF-PECVD | |
| CN106744673B (en) | A kind of preparation method of cross growth amorphous silicon nanowire | |
| CN102154621A (en) | Method for preparing Ni-doped AlN-based diluted magnetic semiconductor thin-film material | |
| CN107747130A (en) | A kind of method that phthalocyanine monocrystal thin films are prepared in the grapheme modified substrate of copper film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20140716 |