CN103924217A - Chemical vapor deposition equipment - Google Patents
Chemical vapor deposition equipment Download PDFInfo
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- CN103924217A CN103924217A CN201410156049.6A CN201410156049A CN103924217A CN 103924217 A CN103924217 A CN 103924217A CN 201410156049 A CN201410156049 A CN 201410156049A CN 103924217 A CN103924217 A CN 103924217A
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- cover plate
- split
- chemical vapor
- spacing lever
- vapor depsotition
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Abstract
The invention discloses chemical vapor deposition equipment which comprises a base and a cover plate, wherein the base and the cover plate are groove-shaped and form a vacuum reaction chamber after being fastened together; the base is internally provided with a platform deck on which a to-be-coated substrate is placed; the cover plate is internally provided with a gas diffuser; a top cover of the cover plate is provided with a gas inlet pipe; the gas diffuser is of a split structure and comprises multiple independent split diffusers; the multiple split diffusers are positioned in the same horizontal plane; each split diffuser is provided with an ascending-descending regulating mechanism used for driving the corresponding split diffuser to ascend and descend along the vertical direction. The chemical vapor deposition equipment is capable of ensuring that reactants sprayed by the whole gas diffuser are uniformly deposited on the substrate below, improving the film formation uniformity of the substrate, overcoming the local semiconductor film defect and poorness problem caused by equipment aging, improving the TFT (Thin-Film Transistor) product yield and prolonging the service lives of equipment spare parts.
Description
Technical field
The present invention relates to display panels manufacturing technology field, particularly relate to a kind of chemical vapor depsotition equipment.
Background technology
At TFT-LCD(Thin Film Transistor-Liquid Crystal Display, Thin Film Transistor-LCD) in manufacturing processed, CVD(Chemical Vapor Deposition, chemical vapour deposition) be one of important procedure forming on substrate TFT, the plated film that namely we are commonly called as, wherein filming equipment is under vacuum environment, to utilize high-frequency voltage to make reactant gases generation plasma body finally form solid-state semiconductor to be deposited on substrate.In order to make can form on substrate the semiconductor film of homogeneous thickness, just need to there is strict requirement to the precision of conversion unit.
In prior art, the structural representation of conventional chemical vapor depsotition equipment as shown in Figure 1, comprise vacuum reaction chamber and be arranged on the indoor gas diffusion structure of vacuum reaction, board structure to be coated, vacuum reaction chamber comprises base 1 and the cover buckle cover plate 4 on base 1, base 1 and cover plate 4 are groove shape structure, base 1 and cover plate 4 form vacuum chamber after covering sealing, the interior microscope carrier 2 that arranges of base 1, on microscope carrier 2 for placing substrate 3, substrate 3 upper surfaces carry out plated film, the interior gaseous diffuser 5 that arranges of cover plate 4, gaseous diffuser 5 is connected with cover plate 4 by Link Port 7, after base 1 and cover plate 4 fasten, gaseous diffuser 5 is positioned at directly over substrate 3, on the top cover of cover plate 4, offer gas introduction tube 6.While utilizing this chemical vapor depsotition equipment to carry out plated film, it is indoor that reactant gases passes into vacuum reaction by gas introduction tube 6, forms rete via gaseous diffuser 5 splashes to substrate 3 surface depositions.
In above-mentioned chemical vapor depsotition equipment, gaseous diffuser 5, as upper electrode, arranges lower electrode on microscope carrier 2, and the battery lead plate planeness at the effect of plated film and the two poles of the earth, aperture of gaseous diffuser 5 etc. structure has close relationship.Because the environment in reflection equipment is high-frequency high temperature condition, so just accelerate spare part weathering process, as battery lead plate distortion, the situations such as the local change in gaseous diffuser aperture is large, the immediate problem that this phenomenon causes is exactly, the film uniformity on substrate of being plated to poor, there is local thickness defect condition and occur, further will affect the display quality of display base plate.
Summary of the invention
(1) technical problem that will solve
The technical problem to be solved in the present invention be how to reduce chemical vapor depsotition equipment in life-time service process because of the inhomogeneous defect of aging the brought coating film thickness of spare part.
(2) technical scheme
In order to solve the problems of the technologies described above, the invention provides a kind of chemical vapor depsotition equipment, comprise base and cover plate, described base and cover plate are groove shape and both and form vacuum reaction chamber after covering, in described base, microscope carrier is set, on described microscope carrier, place substrate to be coated, in described cover plate, gaseous diffuser is set, on the top cover of described cover plate, offer gas introduction tube; Described gaseous diffuser is set to split-type structural, comprise multiple independently split scatterers, multiple described split scatterers are positioned in same level aspect, on each described split scatterer, lifting regulating mechanism is set, drives its corresponding vertically lifting of split scatterer by lifting regulating mechanism.
Preferably, each described lifting regulating mechanism comprises: spacing lever, and it passes top cover of described cover plate and can move up and down, and bottom connects described split scatterer, and top is positioned at described cover plate outside; Locating part, is arranged on the top of described spacing lever, in order to spacing lever top is positioned.
Preferably, the top cover outer setting of described cover plate has anchor, and described spacing lever top is positioned on described anchor by locating part.
Preferably, on described spacing lever, be arranged with sealing-ring, described sealing-ring is near described cover plate top cover.
Preferably, be arranged with sealing-ring fixed block on described spacing lever, described sealing-ring fixed block is fixed on described cover plate top cover and presses down described sealing-ring.
Preferably, described spacing lever top is provided with screw thread, and described locating part is adjusting bolt.
Preferably, each described lifting regulating mechanism comprises many spacing levers, and many spacing levers are evenly distributed on a split scatterer surrounding.
Preferably, between two adjacent described split scatterers, the spacing lever of adjacent setting shares an anchor.
Preferably, between two adjacent described split scatterers, be flexibly connected by Link Port, this Link Port is identical with the Link Port between gaseous diffuser and cover plate.
Preferably, described spacing lever top is provided with scale marker.
(3) beneficial effect
The chemical vapor depsotition equipment that technique scheme provides, gaseous diffuser is set to split-type structural, and each split scatterer is arranged separately to a lifting regulating mechanism, by regulating the vertical position of each freestanding split scatterer to determine that this battery lead plate is to the distance between lower electrode plate, make the reactant uniform deposition of whole gaseous diffuser injection on lower substrate, improve substrate and become film uniformity, make up the bad problem of semiconductor film local defect causing because spare part is aging, improve TFT product yield, the work-ing life of extension device spare part.
Brief description of the drawings
Fig. 1 is the structural representation of chemical vapor depsotition equipment in prior art;
Fig. 2 is the one-piece construction schematic diagram of chemical vapor depsotition equipment in the embodiment of the present invention;
Fig. 3 is the local structure schematic diagram of chemical vapor depsotition equipment in Fig. 2;
Fig. 4 is the structural representation of gaseous diffuser in Fig. 2.
Wherein, 1: base; 2: microscope carrier; 3: substrate; 4: cover plate; 5: gaseous diffuser; 6: gas introduction tube; 7: Link Port; 8: spacing lever; 9: anchor; 10: adjusting bolt; 11: sealing-ring fixed block; 12: sealing-ring.
Embodiment
Below in conjunction with drawings and Examples, the specific embodiment of the present invention is described in further detail.Following examples are used for illustrating the present invention, but are not used for limiting the scope of the invention.
Become large in order to solve chemical vapor depsotition equipment in prior art because spare part aging the caused distortion of power-on and power-off pole plate, gaseous diffuser aperture are local, on initiation substrate, local deposits rete is thicker, the phenomenon that local deposits rete is thinner, the present invention's gaseous diffuser is set to split-type structural, a lifting regulating mechanism is set on each split scatterer, to control separately the distance between local power-on and power-off pole plate, in the time that local depositional coating is thicker, can suitably increase the distance between power-on and power-off pole plate, so that depositional coating attenuation; In the time that local depositional coating is thinner, can suitably reduce the distance between power-on and power-off pole plate, so that depositional coating thickening; Become film uniformity thereby improve substrate, make up the bad problem of semiconductor film local defect causing because spare part is aging, improve TFT product yield, the work-ing life of extension device spare part.
Particularly, shown in Fig. 2 and Fig. 3, the present embodiment chemical vapor depsotition equipment comprises base 1 and cover plate 4, and base 1 and cover plate 4 are groove shape and both and form vacuum reaction chamber after covering, and the interior microscope carrier 2 that arranges of base 1, places substrate 3 to be coated on microscope carrier 2; The interior gaseous diffuser 5 that arranges of cover plate 4, between gaseous diffuser 5 and cover plate 4, be connected by Link Port 7, gaseous diffuser 5 is positioned at directly over basic 3, offers gas introduction tube 6 on the top cover of cover plate 4, by gas introduction tube 6 to the indoor reactant gases that passes into of vacuum reaction.In this chemical vapor depsotition equipment, main improved structure is gaseous diffuser 5, gaseous diffuser is set to split-type structural, comprise multiple independently split scatterers, shown in A, B as shown, C, multiple split scatterers are positioned in same level aspect, between two adjacent split scatterers, be flexibly connected by Link Port 7, this Link Port is identical with the Link Port between gaseous diffuser 5 and cover plate 4, on each split scatterer, be provided with a lifting regulating mechanism, drive its corresponding vertically lifting of split scatterer by lifting regulating mechanism.
Wherein, each lifting regulating mechanism comprises: spacing lever 8, and it passes top cover of cover plate 4 and can move up and down, and bottom connects corresponding split scatterer, and top is positioned at cover plate 4 outsides; Locating part, is arranged on the top of spacing lever 8 and is positioned at the outside of cover plate 4, in order to spacing lever 8 tops are positioned.Each lifting regulating mechanism comprises that " many " at many these places of spacing lever 8(refer to " two or more ", lower same), many spacing levers 8 are evenly distributed on a split scatterer surrounding, preferably, a corresponding split scatterer arranges four spacing levers, four spacing levers are separately positioned on four corners of a split scatterer, as shown in Figure 4, capitalization English letter A to I represents respectively single split scatterer, and the circle of each split scatterer corner represents a spacing lever.Locating part can be for being arranged on the fixing and holding mechanism on cover plate 4, as clamp ring etc., needing moving interval governor lever 8 when adjusting the vertical height of split scatterer, first moving interval governor lever 8, to desired position, then utilizes fixing and holding mechanism by fixing spacing lever 8; Or locating part also can be set to bolt fixed mode, as shown in Figures 2 and 3, top at spacing lever 8 arranges screw thread, utilize adjusting bolt 10 to match with the screw thread on spacing lever 8, after adjusting the height of spacing lever 8, tighten adjusting bolt 10, block, on the top cover of cover plate 4, can limit the position of split scatterer.
In order to facilitate the fixing of locating part, improve the stability that spacing lever 8 is located, the top cover outer setting of cover plate 4 has anchor 9, and spacing lever 8 tops are positioned on anchor 9 by locating part; Between two adjacent split scatterers, the spacing lever 8 of adjacent setting shares an anchor 9, with simplified construction, reduces costs; Anchor 9 can be set to class n shape structure, comprises two back up pads that parallel that arrange perpendicular to cover plate 4, and connects the mounting plate of two back up pads, and spacing lever 8 is through mounting plate, and adjusting bolt 10 blocks are above mounting plate.Spacing lever 8 tops are provided with scale marker, for reference while supplying to regulate the spacing d between upper and lower base plate, improve convenience and accuracy that spacing lever 8 operates.The lower shape of spacing lever 8 can adopt cylindrical shape, also can design gas stream linear shape according to design needs and the reactant gases flow direction.
Vacuum reaction is indoor must ensure vacuum environment, so each independently spacing lever and cover plate contact position need sealing, so be arranged with sealing-ring 12 on spacing lever 8, sealing-ring 12 is near cover plate 4 top covers, in order further to ensure the resistance to air loss effect of sealing-ring 12, on spacing lever 8, be arranged with sealing-ring fixed block 11, sealing-ring fixed block 11 is fixed on cover plate 4 top covers and lower pressure seal ring 12.
Shown in Fig. 4, when the substrate film forming of split scatterer A corresponding position in vacuum reaction chamber occurs when abnormal, just can regulate the spacing lever position at corresponding split scatterer A place.In the time that thicknesses of layers exceedes upper limit threshold, need to increase in corresponding position spacing d; In the time that thicknesses of layers exceedes lower threshold, with corresponding, just need to reduce spacing d in corresponding position above, the rest may be inferred.
According to above structural principle explanation, do not changing in equipment primitive reaction constructional feature situation, utilizing outside control method to realize regulates the vertical position of the indoor gaseous diffuser of vacuum reaction, thereby the distance in change reaction process between power-on and power-off pole plate, control the upper/lower electrode distance between plates standard in reaction parameter, can solve the bad problem of Product Process causing due to the local hardware deficiency of gaseous diffuser or lower electrode plate, extend spare part work-ing life.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, do not departing under the prerequisite of the technology of the present invention principle; can also make some improvement and replacement, these improvement and replacement also should be considered as protection scope of the present invention.
Claims (10)
1. a chemical vapor depsotition equipment, comprise base and cover plate, described base and cover plate are groove shape and both and form vacuum reaction chamber after covering, in described base, microscope carrier is set, on described microscope carrier, place substrate to be coated, in described cover plate, gaseous diffuser is set, on the top cover of described cover plate, offers gas introduction tube; It is characterized in that, described gaseous diffuser is set to split-type structural, comprise multiple independently split scatterers, multiple described split scatterers are positioned in same level aspect, on each described split scatterer, lifting regulating mechanism is set, drives its corresponding vertically lifting of split scatterer by lifting regulating mechanism.
2. chemical vapor depsotition equipment as claimed in claim 1, is characterized in that, each described lifting regulating mechanism comprises:
Spacing lever, it passes top cover of described cover plate and can move up and down, and bottom connects described split scatterer, and top is positioned at described cover plate outside;
Locating part, is arranged on the top of described spacing lever, in order to spacing lever top is positioned.
3. chemical vapor depsotition equipment as claimed in claim 2, is characterized in that, the top cover outer setting of described cover plate has anchor, and described spacing lever top is positioned on described anchor by locating part.
4. chemical vapor depsotition equipment as claimed in claim 2, is characterized in that, on described spacing lever, is arranged with sealing-ring, and described sealing-ring is near described cover plate top cover.
5. chemical vapor depsotition equipment as claimed in claim 4, is characterized in that, is arranged with sealing-ring fixed block on described spacing lever, and described sealing-ring fixed block is fixed on described cover plate top cover and presses down described sealing-ring.
6. chemical vapor depsotition equipment as claimed in claim 2, is characterized in that, described spacing lever top is provided with screw thread, and described locating part is adjusting bolt.
7. chemical vapor depsotition equipment as claimed in claim 2, is characterized in that, each described lifting regulating mechanism comprises many spacing levers, and many spacing levers are evenly distributed on a split scatterer surrounding.
8. chemical vapor depsotition equipment as claimed in claim 3, is characterized in that, between two adjacent described split scatterers, the spacing lever of adjacent setting shares an anchor.
9. chemical vapor depsotition equipment as claimed in claim 2, is characterized in that, between two adjacent described split scatterers, is flexibly connected by Link Port, and this Link Port is identical with the Link Port between gaseous diffuser and cover plate.
10. chemical vapor depsotition equipment as claimed in claim 2, is characterized in that, described spacing lever top is provided with scale marker.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410156049.6A CN103924217A (en) | 2014-04-17 | 2014-04-17 | Chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410156049.6A CN103924217A (en) | 2014-04-17 | 2014-04-17 | Chemical vapor deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103924217A true CN103924217A (en) | 2014-07-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410156049.6A Pending CN103924217A (en) | 2014-04-17 | 2014-04-17 | Chemical vapor deposition equipment |
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| CN (1) | CN103924217A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105483652A (en) * | 2015-12-07 | 2016-04-13 | 武汉华星光电技术有限公司 | Chemical vapor deposition device and use method thereof |
Citations (5)
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| CN201136895Y (en) * | 2007-12-13 | 2008-10-22 | 中芯国际集成电路制造(上海)有限公司 | Chemical vapor deposition apparatus |
| CN202039114U (en) * | 2011-03-31 | 2011-11-16 | 芜湖恒达薄板有限公司 | Control device with spangles on clad layer of strip steel |
| CN202297763U (en) * | 2011-09-28 | 2012-07-04 | 北京科技大学 | Metal-organic chemical vapor deposition (MOCVD) device |
| CN102534557A (en) * | 2010-12-10 | 2012-07-04 | 财团法人工业技术研究院 | Spray head combining air intake and air exhaust |
| CN102912318A (en) * | 2012-10-19 | 2013-02-06 | 上海宏力半导体制造有限公司 | Method of reducing contaminant particles in reaction chamber and chemical vapor deposition apparatus |
-
2014
- 2014-04-17 CN CN201410156049.6A patent/CN103924217A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201136895Y (en) * | 2007-12-13 | 2008-10-22 | 中芯国际集成电路制造(上海)有限公司 | Chemical vapor deposition apparatus |
| CN102534557A (en) * | 2010-12-10 | 2012-07-04 | 财团法人工业技术研究院 | Spray head combining air intake and air exhaust |
| CN202039114U (en) * | 2011-03-31 | 2011-11-16 | 芜湖恒达薄板有限公司 | Control device with spangles on clad layer of strip steel |
| CN202297763U (en) * | 2011-09-28 | 2012-07-04 | 北京科技大学 | Metal-organic chemical vapor deposition (MOCVD) device |
| CN102912318A (en) * | 2012-10-19 | 2013-02-06 | 上海宏力半导体制造有限公司 | Method of reducing contaminant particles in reaction chamber and chemical vapor deposition apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105483652A (en) * | 2015-12-07 | 2016-04-13 | 武汉华星光电技术有限公司 | Chemical vapor deposition device and use method thereof |
| CN105483652B (en) * | 2015-12-07 | 2018-03-30 | 武汉华星光电技术有限公司 | Chemical vapor deposition unit and its application method |
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Application publication date: 20140716 |
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