CN103904219A - Inversion organic thin film solar cell decorated by polar solvent and preparing method thereof - Google Patents

Inversion organic thin film solar cell decorated by polar solvent and preparing method thereof Download PDF

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CN103904219A
CN103904219A CN201410121769.9A CN201410121769A CN103904219A CN 103904219 A CN103904219 A CN 103904219A CN 201410121769 A CN201410121769 A CN 201410121769A CN 103904219 A CN103904219 A CN 103904219A
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polar solvent
buffer layer
solar cell
thin film
film solar
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于军胜
郑毅帆
李曙光
钟建
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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Abstract

The invention discloses an inversion organic thin film solar cell decorated by a polar solvent and a preparing method of the inversion organic thin film solar cell and relates to the field of organic polymer photovoltaic devices or organic semiconductor thin film solar cells. An inversion structure is adopted in the solar cell. The solar cell comprises a substrate, a transparent conductive cathode ITO, a cathode buffer layer, a light active layer, an anode buffer layer, a polar solvent buffer layer and a metal anode. The polar solvent buffer layer is added to the portion between the anode buffer layer and the light active layer of the solar cell, the conductivity of the anode buffer layer can be effectively improved, the series resistance of devices is reduced, the carrier transporting efficiency is improved, and the photoelectric conversion efficiency of the solar cell is finally improved.

Description

Transoid organic thin film solar cell that polar solvent is modified and preparation method thereof
Technical field
The invention belongs to organic polymer photovoltaic device or organic semiconductor thin-film area of solar cell, be specifically related to transoid organic thin film solar cell of polar solvent modification and preparation method thereof.
Background technology
Along with the explosive growth of global energy demand, the own primary difficult problem that will face through becoming development of all countries economy of energy problem.Because solar energy has cleaning, the feature such as widely distributed, inexhaustible, research photovoltaic generation solves energy problem becomes emphasis and the focus of regenerative resource area research.At present, according to the difference of the material character of the photoactive layer of composition solar cell, active layer material can be divided into inorganic semiconductor material and organic semiconducting materials.Compared with inorganic semiconductor material, organic semiconducting materials is the synthesis condition gentleness relative to device process conditions of material itself not only, its molecular structure of chemistry is easily modified, while making battery with it, can meet that cost is low, power consumption less, the easily requirement of large-area manufacturing.From the nineties in 20th century, along with the fast development of thin film technique, the performance of battery prepared by employing new material new construction new technology is greatly enhanced.
But compared with the large-scale production of inorganic solar cell, organic solar batteries is because its photoelectric conversion efficiency is also relatively low, it is practical also needs time.Prepare suitable anode buffer layer and be the effective ways that improve organic photovoltaic cell photoelectric conversion efficiency, wherein PEDOT:PSS because it has good dissolubility and hole transport ability being widely used in organic solar batteries in recent years.Organic solar batteries based on PEDOT:PSS anode buffer layer has shown good photoelectric properties, further optimizes PEDOT:PSS anode buffer layer and becomes the emphasis of this area research at present.
At present, the main cause of restriction PEDOT:PSS anode buffer layer application is: first, in PEDOT:PSS, when being prepared into after anode buffer layer, hydrophilic nonconducting PSS group can be reunited at film surface, thereby hinders the transmission of charge carrier; Secondly, the main body PEDOT group of transporting holes can not effectively separate with hydrophilic nonconducting PSS group after film forming, thereby has restricted the transmission rate in charge carrier hole in anode buffer layer.Traditional solution is in PEDOT:PSS solution, to mix a certain amount of additive to separate PEDOT and PSS group, thereby make it become nonconducting Trapping Centers but cannot remove additive, the further raising of conductance that restricted PEDOT:PSS film.
Summary of the invention
The object of the invention is: transoid organic thin film solar cell of polar solvent modification and preparation method thereof is provided, by adding polar solvent resilient coating to carry out modified anode resilient coating, to realize: (1) is eliminated surperficial PSS group and reunited to improve anode buffer layer conductivity; (2) series resistance of reduction device; (3) improve electric transmission efficiency, improve device short-circuit current density.
Technical scheme provided by the invention is: the transoid organic thin film solar cell that polar solvent is modified, it is characterized in that, this solar cell adopts reciprocal form structure, be followed successively by from top to bottom: substrate, transparent conductive cathode ITO, cathode buffer layer, photoactive layer, anode buffer layer, polarity resilient coating, metal anode; Described polarity resilient coating mass percent consists of: methyl-sulfoxide 95～97 %, and ethanol 3～5 %, its thickness is 1～10 nm.
As preferably, described anode buffer layer material for poly-(3,4-Ethylenedioxy Thiophene)-poly-(styrene sulfonic acid) (PEDOT:PSS), its thickness is 15～50 nm.
As preferably, the concentration of the electron donor material P3HT that described photoactive layer is 1:20～5:1 by mass ratio and electron acceptor material PCBM mixture is that the solution of 1～20 mg/ml is prepared from, the conventional solvents in this area such as photoactive layer is 50～300 nm, and solvent is o-dichlorohenzene.
As preferably, described cathode cushioning layer material is TPBi, BCP, Bphen, Alq 3, ZnO or TiO 2one or more, its thickness is 1～20 nm.
As preferably, described metal anode material is Ag, Al or Cu, and its thickness is 100～300 nm.
As preferably, described backing material is glass or transparent polymer, described transparent polymer material be polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin or polyacrylic one or more.
The preparation method of the transoid organic thin film solar cell that polar solvent is modified, is characterized in that, comprises the following steps:
1) clean the substrate being formed by transparent substrates and transparent conductive cathode ITO, then dry up with nitrogen;
2) at transparent conductive cathode ITO surface rotary coating, printing or spraying ZnO or TiO 2solution, and toast the film forming, or adopt vacuum vapour deposition evaporation TPBi, BCP, Bphen, Alq on transparent conductive cathode ITO surface 3prepare cathode buffer layer;
3) on cathode buffer layer, adopt the mode of spin coating or spraying or self assembly or inkjet printing or silk screen printing to prepare P3HT:PCBM photoactive layer, and toast;
4) at photoactive layer surface rotary coating or spraying anode buffer layer;
5) on anode buffer layer, adopt the mode of solvent evaporates annealing to prepare polar solvent resilient coating;
6) substrate is adopted the mode of thermal annealing anneal;
7) evaporation metal anode on anode buffer layer.
As preferably, described thermal annealing temperature range is 140～170 DEG C.
As preferably, described thermal annealing mode adopts one or more of Thermostatic platform heating, baking oven heating, Far-infrared Heating, Hot-blast Heating or microwave heating.
As preferably, the temperature range of described P3HT:PCBM film baking is at 20～150 DEG C.
Beneficial effect of the present invention is:
One, by introducing polar solvent resilient coating, can effectively remove the PSS group of anode buffer layer surface sediment, thereby improve carrier transport efficiency, improve the conductivity of anode buffer layer;
Two, reduce the recombination probability of electronics in photoactive layer/anode buffer bed boundary, effectively reduced the series resistance of device;
Three, polar solvent has promoted being vertically separated of PEDOT:PSS thin layer, has effectively increased carrier transport efficiency, has increased the short-circuit current density of device.
Brief description of the drawings
Fig. 1 is the transoid organic thin film solar cell structure that polar solvent involved in the present invention is modified;
Fig. 2 is solvent evaporates annealing preparation method schematic diagram.
Mark in figure: 1-substrate, 2-transparent conductive cathode ITO, 3-cathode buffer layer, 4-photoactive layer, 5-anode buffer layer, 6-polar solvent resilient coating, 7-metal anode.
  
Embodiment:
Below in conjunction with attached Fig. 1 and 2 and specific embodiment, the invention will be further described.The execution mode of transoid organic thin film solar cell that polar solvent of the present invention is modified and preparation method thereof is not limited to following examples, within the various variations of making under the prerequisite that does not depart from aim of the present invention all belong to protection scope of the present invention.
Fig. 2 is solvent evaporates annealing preparation method schematic diagram, the made prime film of getting ready is put into polar solvent atmosphere and carry out solvent evaporates annealing, evaporation last layer polar solvent resilient coating.
Fig. 1 is that the transoid organic thin film solar cell knot that polar solvent involved in the present invention is modified forms schematic diagram.
As shown in Figure 1, this solar cell adopts eurymeric battery structure, is followed successively by from top to bottom: substrate 1, transparent conductive cathode ITO 2, cathode buffer layer 3, photoactive layer 4, anode buffer layer 5, polarity resilient coating 6, metal anode 7; Described polarity resilient coating 6 mass percents consist of: methyl-sulfoxide 95～97 %, and ethanol 3～5 %, its thickness range is 1～10 nm.Described anode buffer layer 6 materials are PEDOT:PSS, and described anode buffer layer 6 thickness are 15～50 nm; The concentration of the electron donor material P3HT that described photoactive layer 4 is 1:20～5:1 by mass ratio and electron acceptor material PCBM mixture is that the solution of 1～20 mg/ml is prepared from, and described photoactive layer thickness is 50～300 nm; Described cathode buffer layer 3 materials are TPBi, BCP, Bphen, Alq 3, ZnO or TiO 2one or more, its thickness is 1～20 nm; Described metal anode 7 materials are Ag, Al or Cu, and its thickness is 100～300 nm; Described substrate 1 material is glass or transparent polymer, described transparent polymer material comprise polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin or polyacrylic one or more.
Embodiment 1(comparative example):
Clean surface roughness is less than the substrate being made up of transparent substrates and transparent conductive cathode ITO of 1 nm, then dries up with nitrogen; At transparent conductive cathode ITO surface rotary coating ZnO (5000 rpm, 40 s, 15 nm), and toast the film (200 DEG C, 60 min) forming, obtain cathode buffer layer; On cathode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20 mg/ml) photoactive layer (1000 rpm, 25 s, 220 nm), and toast (140 DEG C, 5 min); Prepare anode buffer layer at photoactive layer surface rotary coating PEDOT:PSS solution (3000 rpm, 60 s, 30 nm); Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 DEG C, 5 min); Evaporation metal anode A g (100 nm) on anode solvent resilient coating.Under standard test condition: AM 1.5,100 mW/cm 2, record the open circuit voltage (V of device oC)=0.54 V, short circuit current (J sC)=8.6 mA/cm 2, fill factor, curve factor (FF)=0.56, photoelectric conversion efficiency (PCE)=2.60 %.
Embodiment 2:
Clean surface roughness is less than the substrate being made up of transparent substrates and transparent conductive cathode ITO of 1 nm, then dries up with nitrogen; At transparent conductive cathode ITO surface rotary coating ZnO (5000 rpm, 40 s, 15 nm), and toast the film (200 DEG C, 60 min) forming, obtain cathode buffer layer; On cathode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20 mg/ml) photoactive layer (1000 rpm, 25 s, 220 nm), and toast (140 DEG C, 5 min); Prepare anode buffer layer at photoactive layer surface rotary coating PEDOT:PSS solution (3000 rpm, 60 s, 30 nm); Adopt solvent evaporates annealing method to prepare polar solvent resilient coating (methyl-sulfoxide 95 %, ethanol 5 %, 5 nm, 5 min) on anode buffer layer surface; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 DEG C, 5 min); Evaporation metal anode A g (100 nm) on polar solvent resilient coating.Under standard test condition: AM 1.5,100 mW/cm 2, record the open circuit voltage (V of device oC)=0.55 V, short circuit current (J sC)=9.2 mA/cm 2, fill factor, curve factor (FF)=0.61, photoelectric conversion efficiency (PCE)=3.01 %.
Embodiment 3:
Clean surface roughness is less than the substrate being made up of transparent substrates and transparent conductive cathode ITO of 1 nm, then dries up with nitrogen; At transparent conductive cathode ITO surface rotary coating ZnO (5000 rpm, 40 s, 15 nm), and formed film is toasted to (200 DEG C, 60 min), obtain cathode buffer layer; On cathode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20 mg/ml) photoactive layer (1000 rpm, 25 s, 220 nm), and toast (140 DEG C, 5 min); On photoactive layer surface, rotary coating PEDOT:PSS solution is prepared anode buffer layer (3000 rpm, 60 s, 28 nm); Adopt solvent evaporates annealing method to prepare polar solvent resilient coating (methyl-sulfoxide 96 %, ethanol 4 %, 5nm, 15 min) on anode buffer layer surface; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 DEG C, 5 min); Evaporation metal anode A g (100 nm) on polar solvent resilient coating.Under standard test condition: AM 1.5,100 mW/cm 2, record the open circuit voltage (V of device oC)=0.55 V, short circuit current (J sC)=9.4 mA/cm 2, fill factor, curve factor (FF)=0.60, photoelectric conversion efficiency (PCE)=3.10 %.
Embodiment 4:
Clean surface roughness is less than the substrate being made up of transparent substrates and transparent conductive cathode ITO of 1 nm, then dries up with nitrogen; At transparent conductive cathode ITO surface rotary coating ZnO (5000 rpm, 40 s, 15 nm), and toast the film (200 DEG C, 60 min) forming, obtain cathode buffer layer; On cathode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20 mg/ml) photoactive layer (1000 rpm, 25 s, 220 nm), and toast (140 DEG C, 5 min); Prepare anode buffer layer at photoactive layer surface rotary coating PEDOT:PSS solution (3000 rpm, 60 s, 30 nm); Adopt solvent evaporates annealing method to prepare polar solvent resilient coating (methyl-sulfoxide 97 %, ethanol 3 %, 5 nm, 10 min) on anode buffer layer surface; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 DEG C, 5 min); Evaporation metal anode A g (100 nm) on polar solvent resilient coating.Under standard test condition: AM 1.5,100 mW/cm 2, record the open circuit voltage (V of device oC)=0.56 V, short circuit current (J sC)=10.2 mA/cm 2, fill factor, curve factor (FF)=0.63, photoelectric conversion efficiency (PCE)=3.59 %.
Embodiment 5:
Clean surface roughness is less than the substrate being made up of transparent substrates and transparent conductive cathode ITO of 1 nm, then dries up with nitrogen; At transparent conductive cathode ITO surface rotary coating ZnO (5000 rpm, 40 s, 15 nm), and toast the film (200 DEG C, 60 min) forming, obtain cathode buffer layer; On cathode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20 mg/ml) photoactive layer (1000 rpm, 25 s, 220 nm), and toast (140 DEG C, 5 min); Prepare anode buffer layer at photoactive layer surface rotary coating PEDOT:PSS solution (3000 rpm, 60 s, 30 nm); Adopt solvent evaporates annealing method to prepare polar solvent resilient coating (methyl-sulfoxide 95 %, ethanol 5 %, 5 nm, 15 min) on anode buffer layer surface; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 DEG C, 5 min); Evaporation metal anode A g (100 nm) on polar solvent resilient coating.Under standard test condition: AM 1.5,100 mW/cm 2, record the open circuit voltage (V of device oC)=0.56 V, short circuit current (J sC)=10.1 mA/cm 2, fill factor, curve factor (FF)=0.63, photoelectric conversion efficiency (PCE)=3.56 %.
Embodiment 5:
Clean surface roughness is less than the substrate being made up of transparent substrates and transparent conductive cathode ITO of 1 nm, then dries up with nitrogen; At transparent conductive cathode ITO surface rotary coating ZnO (5000 rpm, 40 s, 15 nm), and toast the film (200 DEG C, 60 min) forming, obtain cathode buffer layer; On cathode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20 mg/ml) photoactive layer (1000 rpm, 25 s, 220 nm), and toast (140 DEG C, 5 min); Prepare anode buffer layer at photoactive layer surface rotary coating PEDOT:PSS solution (3000 rpm, 60 s, 30 nm); Adopt solvent evaporates annealing method to prepare polar solvent resilient coating (methyl-sulfoxide 97 %, ethanol 3 %, 5 nm, 30 min) on anode buffer layer surface; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 DEG C, 5 min); Evaporation metal anode A g (100 nm) on polar solvent resilient coating.Under standard test condition: AM 1.5,100 mW/cm 2, record the open circuit voltage (V of device oC)=0.55 V, short circuit current (J sC)=9.87 mA/cm 2, fill factor, curve factor (FF)=0.63, photoelectric conversion efficiency (PCE)=3.42 %.
Embodiment 6:
Clean surface roughness is less than the substrate being made up of transparent substrates and transparent conductive cathode ITO of 1 nm, then dries up with nitrogen; At transparent conductive cathode ITO surface rotary coating ZnO (5000 rpm, 40 s, 15 nm), and toast the film (200 DEG C, 60 min) forming, obtain cathode buffer layer; On cathode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20 mg/ml) photoactive layer (1000 rpm, 25 s, 220 nm), and toast (140 DEG C, 5 min); Prepare anode buffer layer at photoactive layer surface rotary coating PEDOT:PSS solution (3000 rpm, 50 s, 35 nm); Adopt solvent evaporates annealing method to prepare polar solvent resilient coating (methyl-sulfoxide 95 %, ethanol 5 %, 5 nm, 20 min) on anode buffer layer surface; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 DEG C, 5 min); Evaporation metal anode A g (100 nm) on polar solvent resilient coating.Under standard test condition: AM 1.5,100 mW/cm 2, record the open circuit voltage (V of device oC)=0.55 V, short circuit current (J sC)=9.31 mA/cm 2, fill factor, curve factor (FF)=0.61, photoelectric conversion efficiency (PCE)=3.12 %.
Embodiment 7:
Clean surface roughness is less than the substrate being made up of transparent substrates and transparent conductive cathode ITO of 1 nm, then dries up with nitrogen; On transparent conductive cathode ITO surface, evaporation BCP prepares cathode buffer layer (5 nm); On cathode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20 mg/ml) photoactive layer (1000 rpm, 25 s, 220 nm), and toast (140 DEG C, 5 min); Prepare anode buffer layer at photoactive layer surface rotary coating PEDOT:PSS solution (3000 rpm, 60 s, 30 nm); Adopt solvent evaporates annealing method to prepare polar solvent resilient coating (methyl-sulfoxide 97 %, ethanol 3 %, 5 nm, 20 min) on anode buffer layer surface; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 DEG C, 5 min); Evaporation metal anode A g (100 nm) on polar solvent resilient coating.Under standard test condition: AM 1.5,100 mW/cm 2, record the open circuit voltage (V of device oC)=0.55 V, short circuit current (J sC)=8.3 mA/cm 2, fill factor, curve factor (FF)=0.58, photoelectric conversion efficiency (PCE)=2.65 %.
Embodiment 8:
Clean surface roughness is less than the substrate being made up of transparent substrates and transparent conductive cathode ITO of 1 nm, then dries up with nitrogen; At transparent conductive cathode ITO surface evaporating Al q 3prepare cathode buffer layer (5 nm); On cathode buffer layer, adopt spin coating prepare P3HT:PCBM (1:20,20 mg/ml, 280 nm) photoactive layer (1000 rpm, 25 s), and toasts (140 DEG C, 5 min); Prepare anode buffer layer at photoactive layer surface rotary coating PEDOT:PSS solution (3000 rpm, 60 s, 30 nm); Adopt solvent evaporates annealing method to prepare polar solvent resilient coating (methyl-sulfoxide 95 %, ethanol 5 %, 5 nm, 20 min) on anode buffer layer surface; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 DEG C, 5 min); Evaporation metal anode A g (100 nm) on polar solvent resilient coating.Under standard test condition: AM 1.5,100 mW/cm 2, record the open circuit voltage (V of device oC)=0.54 V, short circuit current (J sC)=8.7 mA/cm 2, fill factor, curve factor (FF)=0.58, photoelectric conversion efficiency (PCE)=2.72 %.
Embodiment 9:
Clean surface roughness is less than the substrate being made up of transparent substrates and transparent conductive cathode ITO of 1 nm, then dries up with nitrogen; On transparent conductive cathode ITO surface, evaporation BCP prepares cathode buffer layer (3 nm); On cathode buffer layer, adopt spin coating prepare P3HT:PCBM (1:20,20 mg/ml, 280 nm) photoactive layer (1000 rpm, 25 s), and toasts (140 DEG C, 5 min); Prepare anode buffer layer at photoactive layer surface rotary coating PEDOT:PSS solution (3000 rpm, 60 s, 30 nm); Adopt solvent evaporates annealing method to prepare polar solvent resilient coating (methyl-sulfoxide 95 %, ethanol 5 %, 5 nm, 20 min) on anode buffer layer surface; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 DEG C, 5 min); Evaporation metal anode A g (100 nm) on polar solvent resilient coating.Under standard test condition: AM 1.5,100 mW/cm 2, record the open circuit voltage (V of device oC)=0.56 V, short circuit current (J sC)=9.56 mA/cm 2, fill factor, curve factor (FF)=0.55, photoelectric conversion efficiency (PCE)=2.95 %.
Embodiment 10:
Clean surface roughness is less than the substrate being made up of transparent substrates and transparent conductive cathode ITO of 1 nm, then dries up with nitrogen; At transparent conductive cathode ITO surface evaporating Al q 3(3 nm) prepares cathode buffer layer; On cathode buffer layer, adopt spin coating to prepare P3HT:PCBM (1:20,20 mg/ml, 280 nm) photoactive layer (1000rpm, 25s), and toast (140 DEG C, 5 min); Prepare anode buffer layer at photoactive layer surface rotary coating PEDOT:PSS solution (3000 rpm, 60 s, 30 nm); Adopt solvent evaporates annealing method to prepare polar solvent resilient coating (methyl-sulfoxide 95 %, ethanol 5 %, 5 nm, 20 min) on anode buffer layer surface; Substrate is adopted to the mode of Thermostatic platform heating anneal anneal (150 DEG C, 5 min); Evaporation metal anode A g (100 nm) on polar solvent resilient coating.Under standard test condition: AM 1.5,100 mW/cm 2, record the open circuit voltage (V of device oC)=0.55 V, short circuit current (J sC)=8.64 mA/cm 2, fill factor, curve factor (FF)=0.58, photoelectric conversion efficiency (PCE)=2.76 %.
Table 1 is device series resistance (R s) parameter list, from table, can observe the R through the device of polar solvent resilient coating modification sto obviously reduce, thereby short-circuit current density that can boost device improves device efficiency.
Table 1 device series resistance (R s) parameter list
Figure 761807DEST_PATH_IMAGE001

Claims (10)

1. the transoid organic thin film solar cell that polar solvent is modified, is characterized in that, this solar cell is reciprocal form structure, is followed successively by from top to bottom: substrate, transparent conductive cathode ITO, cathode buffer layer, photoactive layer, anode buffer layer, polar solvent resilient coating, metal anode; Described polar solvent resilient coating mass percent consists of: methyl-sulfoxide 95～97 %, and ethanol 3～5 %, its thickness is 1～10 nm.
2. the transoid organic thin film solar cell that polar solvent according to claim 1 is modified, it is characterized in that: described anode buffer layer material is poly-(3,4-Ethylenedioxy Thiophene)-gathering (styrene sulfonic acid) (PEDOT:PSS), its thickness is 15～50 nm.
3. the transoid organic thin film solar cell that polar solvent according to claim 1 is modified, it is characterized in that: the concentration that described photoactive layer is 1:20～5:1 electron donor material P3HT and electron acceptor material PCBM mixture by mass ratio is that the solution of 1～20 mg/ml is prepared from, and the thickness of photoactive layer is 50～300 nm.
4. the transoid organic thin film solar cell that polar solvent according to claim 1 is modified, is characterized in that: described cathode cushioning layer material is TPBi, BCP, Bphen, Alq 3, ZnO or TiO 2one or more, its thickness is 1～20 nm.
5. the transoid organic thin film solar cell that polar solvent according to claim 1 is modified, is characterized in that: described metal anode material is Ag, Al or Cu, its thickness is 100～300 nm.
6. the transoid organic thin film solar cell that polar solvent according to claim 1 is modified, it is characterized in that: described backing material is glass or transparent polymer, described transparent polymer material be polyethylene, polymethyl methacrylate, Merlon, polyurethanes, polyimides, vinyl chloride-vinyl acetate resin or polyacrylic one or more.
7. the preparation method of the transoid organic thin film solar cell of modifying according to polar solvent described in claim 1-6 any one, it comprises the following steps:
1) clean the substrate being formed by transparent substrates and transparent conductive cathode ITO, then dry up with nitrogen;
2) at transparent conductive cathode ITO surface rotary coating, printing or spraying ZnO or TiO 2solution, and toast the film forming, or adopt vacuum vapour deposition evaporation TPBi, BCP, Bphen, Alq on transparent conductive cathode ITO surface 3prepare cathode buffer layer;
3) on cathode buffer layer, adopt the mode of spin coating or spraying or self assembly or inkjet printing or silk screen printing to prepare P3HT:PCBM photoactive layer, and toast;
4) at photoactive layer surface rotary coating or spraying anode buffer layer;
5) on anode buffer layer, adopt the mode of solvent evaporates annealing to form polar solvent resilient coating;
6) substrate is adopted the mode of thermal annealing anneal;
7) evaporation metal anode on anode buffer layer.
8. the preparation method of the transoid organic thin film solar cell that polar solvent according to claim 7 is modified, in described step 6), thermal annealing temperature range is 140～170 DEG C.
9. the preparation method of the transoid organic thin film solar cell that polar solvent according to claim 8 is modified, described thermal annealing mode adopts one or more of Thermostatic platform heating, baking oven heating, Far-infrared Heating, Hot-blast Heating or microwave heating.
10. the preparation method of the transoid organic thin film solar cell that polar solvent according to claim 9 is modified, the temperature of described P3HT:PCBM film baking is 20～150 DEG C.
CN201410121769.9A 2014-03-28 2014-03-28 Inversion organic thin film solar cell decorated by polar solvent and preparing method thereof Pending CN103904219A (en)

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Publication number Priority date Publication date Assignee Title
CN108779542A (en) * 2015-12-24 2018-11-09 Posco公司 Clad steel sheet with small and uniform coating microstructure and clad steel sheet manufacturing method
US11168389B2 (en) 2015-12-24 2021-11-09 Posco Plated steel sheet having fine and even plating structure
CN108172687A (en) * 2018-01-03 2018-06-15 电子科技大学 A kind of organic solar batteries preparation process based on inversion thermal annealing
CN108172687B (en) * 2018-01-03 2019-12-10 电子科技大学 Organic solar cell preparation process based on inverted thermal annealing
CN108695442A (en) * 2018-05-08 2018-10-23 华南理工大学 A kind of preparation method for the method for embellishing cathode interface and organic electroluminescence device improving organic electroluminescence device performance
CN108695442B (en) * 2018-05-08 2019-12-10 华南理工大学 Cathode interface modification method for improving performance of organic electroluminescent device
CN110993802A (en) * 2019-12-24 2020-04-10 吉林大学 Polymer solar cell based on surface modified cathode buffer layer

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