CN103904163B - doped CdS nanoribbon multi-band infrared detector manufacturing method - Google Patents
doped CdS nanoribbon multi-band infrared detector manufacturing method Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000002074 nanoribbon Substances 0.000 title abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052786 argon Inorganic materials 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910052573 porcelain Inorganic materials 0.000 claims abstract description 14
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000000843 powder Substances 0.000 claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000010931 gold Substances 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 239000011812 mixed powder Substances 0.000 claims abstract description 5
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 5
- 239000010703 silicon Substances 0.000 claims abstract description 5
- 239000002127 nanobelt Substances 0.000 claims description 54
- 238000002360 preparation method Methods 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 11
- 230000000740 bleeding effect Effects 0.000 claims description 7
- 230000003068 static effect Effects 0.000 claims description 7
- 229910052681 coesite Inorganic materials 0.000 claims description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052682 stishovite Inorganic materials 0.000 claims description 5
- 229910052905 tridymite Inorganic materials 0.000 claims description 5
- 229910001020 Au alloy Inorganic materials 0.000 claims description 4
- 229910001069 Ti alloy Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- WFNBSLYTFHMPBY-UHFFFAOYSA-N acetic acid;erbium Chemical compound [Er].CC(O)=O WFNBSLYTFHMPBY-UHFFFAOYSA-N 0.000 claims description 4
- 239000006185 dispersion Substances 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 4
- 239000000284 extract Substances 0.000 claims description 4
- 239000003353 gold alloy Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 3
- 238000007790 scraping Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 4
- 238000005086 pumping Methods 0.000 abstract 2
- 230000007423 decrease Effects 0.000 abstract 1
- DBUHPIKTDUMWTR-UHFFFAOYSA-K erbium(3+);triacetate Chemical compound [Er+3].CC([O-])=O.CC([O-])=O.CC([O-])=O DBUHPIKTDUMWTR-UHFFFAOYSA-K 0.000 abstract 1
- 235000019441 ethanol Nutrition 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 238000001514 detection method Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 7
- 230000005616 pyroelectricity Effects 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- 238000000103 photoluminescence spectrum Methods 0.000 description 4
- 239000002086 nanomaterial Substances 0.000 description 3
- 230000036760 body temperature Effects 0.000 description 2
- 230000003750 conditioning effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000001507 sample dispersion Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02963—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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- H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
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- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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Abstract
The invention discloses an Er＜3+＞ doped CdS nanoribbon multi-band infrared detector manufacturing method. The method comprises the steps that CdS powder and erbium acetate powder are mixed, the mixed powder is taken out to be put into a porcelain boat, a silicon substrate coated and sprayed with a gold thin film with the thickness raging from 20 nanometers to 30 nanometers is placed at the position 5 centimeter away from the porcelain boat, a tubular furnace is closed, air is pumped out to form vacuum, argon is led in, air pumping is stopped, the argon stands for 30 minutes, vacuum pumping is conducted again, and in this way, the steps are repeated three times, the temperature of the furnace rises to 840 DEG C at the heating rate that 25 DEG C is increased per minute, the temperature of 840 DEG C is kept two hours, then the temperature decreases to indoor temperature, 20 sccm argon is led in, and the intensity of pressure inside the tube is kept to be 150 Torr; the substrate is taken out, some samples is scraped off by tweezers to be dispersed into ethyl alcohol, nanometer devices are manufactured through a mask plate, and electrode wires of the nanometer devices are led out; the nanometer devices are connected with an amplifier in three grades, and are put into packaged boxes, and finally, a three-band infrared detector is manufactured. The Er＜3+＞ doped CdS nanoribbon multi-band infrared detector manufacturing method is simple, and the three-band light guide type detector can detect the wave lengths of 457.5 nanometers, 620 nanometers and 955 nanometers.
Description
Technical field
The invention belongs to detector field, particularly relate to a kind of doping Er3+The preparation method of CdS nano belt multi-band infrared detector.
Background technology
Infrared Detectors is a kind of to use an extremely widespread class detector in safe protection engineering, and Infrared Detectors is the ingredient of most critical in guard against theft and alarm system, and the susceptiveness of direct decision systems and stability are the guarantees of whole system quality.In electronic anti-theft detector field, the application of Infrared Detectors widely, because it is cheap, technical performance is stable, and is welcome by numerous professionals deeply.Human body has constant body temperature, typically at about 37 degree, can send the infrared ray about specific wavelength 10 μm, and Infrared Detectors is operated by the infrared ray about 10 μm of detection human-body emitting.Infrared ray about 10 μm of human-body emitting is gathered on infrared induction source after being strengthened by Fresnel optical filter.Infrared induction source generally uses pyroelectricity element, and this element will lose charge balance when receiving human infrared radiation temperature and changing, and outwards discharges electric charge, and subsequent conditioning circuit just can produce alarm signal after processing after testing.Infrared Detectors to detect human body radiation as target, so pyroelectricity element be the infra-red radiation about 10 μm to wavelength must be very sensitive.For only sensitive for infrared radiation to human body, the radiation at it is shown up and is typically covered with special Fresnel optical filter, makes the interference of environment by obvious control action.Its sensor comprises the pyroelectricity element of two mutual serial or parallel connections.And make two electric polarization direction contrast, two heat are released element and are almost had identical effect by ambient background radiation so that it is generation is released electrical effect and cancelled out each other, then the output of detector no signal.Once in people's intrusion detection region, human infrared radiation is focused on by partial mirror, and is received by pyroelectricity unit, but the heat that two panels pyroelectricity unit receives is different, and pyroelectricity also difference can not be offset, and reports to the police through signal processing.The basic conception of the infrared acquisition of Infrared Detectors is exactly the difference of inducing moving objects and the temperature of background object.In the security area of Infrared Detectors, when without human motion, the simply ambient temperature that pyroelectric infrared sensor senses, when human body enters people security area, the infrared ray of 10 microns of human-body emitting gathers on pyroelectric infrared sensor after being strengthened by Fresnel Lenses, the difference of the pyroelectricity element senses in rpyroelectric infrared to human body temperature Yu ambient temperature, temperature changes, losing charge balance, outwards discharge electric charge, subsequent conditioning circuit detection produces alarm signal after processing.
But typically now only have the nano material of detectable single wavelength, these materials otherwise be detection purple light, it is detection HONGGUANG or green glow, there is presently no about two band detection materials and the report of device, let alone three band of light detection materials or device, and the present invention and to study and disclose a kind of three band of light and detect material and the preparation methoies of device.
Summary of the invention
It is an object of the invention to provide a kind of doping Er3+The preparation method of CdS nano belt multi-band infrared detector, it is intended to solve the nano material of existing only detectable single wavelength, there is presently no about two band detection materials and the problem of the report of device.
Necessary technology scheme:
The present invention is achieved in that a kind of doping Er3+The preparation method of CdS nano belt multi-band infrared detector, the step of the method includes:
Step one, by CdS powder and acetic acid erbium powder body be in mass ratio 50: 1 ratio mix homogeneously, then take out 5-10 gram of mixed powder and proceed in porcelain boat, and porcelain boat is put into tube furnace center position；
Step 2, it is sprayed with the thick silicon substrate for 20-30 nano-Au films putting from porcelain boat 5 centimeters, closes tube furnace, extract the vacuum that air makes to reach certain out, and be passed through argon, stop bleeding, allow static 30 minutes of argon, then evacuation, 3 times the most repeatedly；
Step 3, with the heating rate of 25 DEG C per minute, furnace is increased to 840 DEG C subsequently, maintains this temperature 2 hours, then cool to room temperature；
Step 4, taking-up deposition have doping Er3+The substrate of CdS nano belt, then scraping next part deposition with tweezers has doping Er3+CdS nano belt be distributed in ethanol for preparing device；
Step 5, mask plate is utilized to prepare nano-device: to choose SiO2Dispersion nano belt, as substrate, is placed on SiO by/Si2On/Si substrate, and form mask plate on nano belt surface, mask plate is formed titanium/gold alloy electrodes deposition, then removes mask plate, i.e. prepare nano-device, and draw the electrode cable of nano-device；
Step 6, by draw wire device divide 3 grades of access amplifiers, load in the box of encapsulation in the lump, just make three wave band Infrared Detectorss.
Secondary technical scheme:
Further, in step 2, extracting air out, in making pipe, vacuum reaches 10-3-10-4Torr, and be passed through argon, stops bleeding, and allows static 30 minutes of argon, then evacuation reaches 10-3-10-4Torr, 3 times the most repeatedly, removes inner air tube as far as possible, prevents sample oxidation.
Further, in step 3, from be warmed up to lower the temperature whole during be passed through argon in stove, and to maintain intraductal pressure be 150Torr.
Further, in step 4, adulterate Er3+CdS nanometer belt length 10 microns, wide 5-10 micron, thickness about 50-80 nanometer.
Further, the box upper surface in step 6 is transparent, without absorbing, it is simple to light is irradiated on nano belt device.
Further, the alloy electrode material of nano-device forms Ohmic contact with nano belt.
Further, with this nano-device of the photoirradiation of different wave length, find that wavelength is 457.5 nanometers, 620 nanometers, near 3 wavelength such as 955 nanometers, the conductance of nano belt increases, so the present invention can be as a length of 457.5 nanometers of probing wave, 620 nanometers, three wave band photoconductive detectorses of 955 nanometers.
Further, the detectable blue light of this detector, HONGGUANG and near infrared light, therefore be multi-band infrared detector.
The doping Er that the present invention provides3+The preparation method of CdS nano belt multi-band infrared detector, preparation method is simple, clear principle, and adulterate Er3+The profile rule of CdS nano belt, smooth surface, smooth, the thickness of nano belt is about in the range of 20～60nm；Nano belt has hexagonal structure, lattice paprmeter a=0.414nm, c=0.671nm；The spectral peak of the photoluminescence spectrum of CdS nano belt is positioned at about 405nm；The photoluminescence spectrum of CdS:Er3+ nano belt is observed 3 strong glow peaks, with this nano-device of the photoirradiation of different wave length, find that wavelength is 457.5 nanometers, 620 nanometers, near 3 wavelength such as 955 nanometers, the conductance of nano belt increases considerably, so the present invention can be as a length of 457.5 nanometers of probing wave, 620 nanometers, three wave band photoconductive detectorses of 955 nanometers.
Accompanying drawing explanation
Fig. 1 is the doping Er that the embodiment of the present invention provides3+The flow chart of preparation method of CdS nano belt multi-band infrared detector.
Detailed description of the invention
In order to make the purpose of the present invention, technical scheme and advantage clearer, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein, only in order to explain the present invention, is not intended to limit the present invention.
Below in conjunction with accompanying drawing, the principle of the present invention is further described:
In conjunction with accompanying drawing 1, the present invention will be described, and the embodiment of the present invention is achieved in that a kind of doping Er3+The preparation method of CdS nano belt multi-band infrared detector, the step of the method includes:
S101: be the ratio mix homogeneously of 50: 1 in mass ratio by CdS powder and acetic acid erbium powder body, then take out 5-10 gram of mixed powder and proceed in porcelain boat, and porcelain boat is put into tube furnace center position；
S102: be sprayed with the thick silicon substrate for 20-30 nano-Au films putting from porcelain boat 5 centimeters, closes tube furnace, extracts the vacuum that air makes to reach certain out, and be passed through argon, stop bleeding, and allows static 30 minutes of argon, then evacuation, 3 times the most repeatedly；
S103: with the heating rate of 25 DEG C per minute, furnace is increased to 840 DEG C subsequently, maintains this temperature 2 hours, then cools to room temperature；
S104: taking out deposition has doping Er3+The substrate of CdS nano belt, then scraping next part deposition with tweezers has doping Er3+CdS nano belt be scattered in ethanol for preparing device；
S105: utilize mask plate to prepare nano-device: to choose SiO2Dispersion nano belt, as substrate, is placed on SiO by/Si2On/Si substrate, and form mask plate on nano belt surface, mask plate is formed titanium/gold alloy electrodes deposition, then removes mask plate, i.e. prepare nano-device, and draw the electrode cable of nano-device；
S106: divide 3 grades of access amplifiers by the device drawing wire, load in the box of encapsulation in the lump, just make three wave band Infrared Detectorss.
Further, in step s 102, extracting air out, in making pipe, vacuum reaches 10-3-10-4Torr, and be passed through argon, stops bleeding, and allows static 30 minutes of argon, then evacuation reaches 10-3-10-4Torr, 3 times the most repeatedly, removes inner air tube as far as possible, prevents sample oxidation.
Further, in step s 103, from be warmed up to lower the temperature whole during be passed through argon in stove, and to maintain intraductal pressure be 150Torr.
Further, in step S104, adulterate Er3+CdS nano belt long number 10 microns, wide 5-10 micron, thickness about 50-80 nanometer.
Further, box upper surface in step s 106 is transparent, without absorbing, it is simple to light is irradiated on nano belt device.
Further, the alloy electrode material of nano-device forms Ohmic contact with nano belt.
Further, with this nano-device of the photoirradiation of different wave length, find that wavelength is 457.5 nanometers, 620 nanometers, near 3 wavelength such as 955 nanometers, the conductance of nano belt increases considerably, so the present invention can be as a length of 457.5 nanometers of probing wave, 620 nanometers, three wave band photoconductive detectorses of 955 nanometers.
Further, the detectable blue light of this detector, HONGGUANG and near infrared light, therefore be multi-band infrared detector.
The doping Er that the present invention provides3+The preparation method of CdS nano belt multi-band infrared detector, the step of the method includes: be the ratio mix homogeneously of 50: 1 in mass ratio by CdS powder and acetic acid erbium powder body, then take out 5-10 gram of mixed powder to proceed in porcelain boat, and porcelain boat is put into tube furnace center position；It is sprayed with the thick silicon substrate for 20-30 nano-Au films putting from porcelain boat 5 centimeters, closes tube furnace, extract the vacuum that air makes to reach certain out, and be passed through argon, stop bleeding, allow static 30 minutes of argon, then evacuation, 3 times the most repeatedly；With the heating rate of 25 DEG C per minute, furnace is increased to 840 DEG C subsequently, maintains this temperature 2 hours, then cool to room temperature；Take out deposition and have a substrate of CdS nano belt of doping Er3+, then with tweezers scrape next part sample dispersion in ethanol for preparing device；Mask plate is utilized to prepare nano-device: to choose SiO2Dispersion nano belt, as substrate, is placed on SiO by/Si2Form mask plate on/Si substrate, mask plate is formed titanium/gold alloy electrodes deposition, then removes mask plate, i.e. prepare nano-device, and draw the electrode cable of nano-device；Divide 3 grades of access amplifiers by the device drawing wire, load in the box of encapsulation in the lump, just make three wave band Infrared Detectorss.
The doping Er that the present invention provides3+The preparation method of CdS nano belt multi-band infrared detector, preparation method is simple, clear principle, and adulterate Er3+The profile rule of CdS nano belt, smooth surface, smooth, the thickness of nano belt is about in the range of 20～60nm；Nano belt has hexagonal structure, lattice paprmeter a=0.414nm, c=0.671nm；The spectral peak of the photoluminescence spectrum of CdS nano belt is positioned at about 405nm；The photoluminescence spectrum of CdS:Er3+ nano belt is observed 3 strong glow peaks, with this nano-device of the photoirradiation of different wave length, find that wavelength is 457.5 nanometers, 620 nanometers, near 3 wavelength such as 955 nanometers, the conductance of nano belt increases considerably, so the present invention can be as a length of 457.5 nanometers of probing wave, 620 nanometers, three wave band photoconductive detectorses of 955 nanometers.So the Infrared Detectors that the present invention prepares solves face and only has the nano material of detectable single wavelength, these materials or be detection purple light, or be detection HONGGUANG or green glow, there is presently no the problem reported about two band detection materials and device.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all any amendment, equivalent and improvement etc. made within the spirit and principles in the present invention, should be included within the scope of the present invention.
Claims (8)
1. a doping Er3+The preparation method of CdS nano belt multi-band infrared detector, it is characterised in that this doping Er3+The step of preparation method of CdS nano belt multi-band infrared detector include:
Step one, by CdS powder and acetic acid erbium powder body be in mass ratio 50: 1 ratio mix homogeneously, then take out 5-10 gram of mixed powder and proceed in porcelain boat, and porcelain boat is put into tube furnace center position；
Step 2, it is sprayed with the thick silicon substrate for 20-30 nano-Au films putting from porcelain boat 5 centimeters, closes tube furnace, extract air out and make to reach vacuum, and be passed through argon, stop bleeding, allow static 30 minutes of argon, then evacuation, 3 times repeatedly；
Step 3, with the heating rate of 25 DEG C per minute, furnace is increased to 840 DEG C subsequently, maintains 2 hours, then cool to room temperature, the argon of straight-through 20sccm；
Step 4, taking-up deposition have doping Er3+The substrate of CdS nano belt, then scraping next part deposition with tweezers has doping Er3+CdS nano belt be distributed in ethanol for preparing device；
Step 5, mask plate is utilized to prepare nano-device: to choose SiO2Dispersion nano belt, as substrate, is placed on SiO by/Si2On/Si substrate, and form mask plate on nano belt surface, mask plate is formed titanium/gold alloy electrodes deposition, then removes mask plate, i.e. prepare nano-device, and draw the electrode cable of nano-device；
Step 6, by draw wire device divide 3 grades of access amplifiers, load in the box of encapsulation in the lump, just make three wave band Infrared Detectorss.
Adulterate Er the most as claimed in claim 13+The preparation method of CdS nano belt multi-band infrared detector, it is characterised in that in step 2, extracting air out, in making pipe, vacuum reaches 10-3-10-4Torr, and be passed through argon, stops bleeding, and allows static 30 minutes of argon, then evacuation reaches 10-3-10-4Torr, 3 times repeatedly.
Adulterate Er the most as claimed in claim 13+The preparation method of CdS nano belt multi-band infrared detector, it is characterised in that in step 3, from be warmed up to lower the temperature whole during be passed through argon in stove, and to maintain intraductal pressure be 150Torr.
Adulterate Er the most as claimed in claim 13+The preparation method of CdS nano belt multi-band infrared detector, it is characterised in that in step 4, adulterate Er3+CdS nanometer belt length-10 microns, wide 5-10 micron, thick 50-80 nanometer.
Adulterate Er the most as claimed in claim 13+The preparation method of CdS nano belt multi-band infrared detector, it is characterised in that the box upper surface in step 6 is transparent, without absorbing, it is simple to light is irradiated on nano belt device.
Adulterate Er the most as claimed in claim 13+The preparation method of CdS nano belt multi-band infrared detector, it is characterised in that the alloy electrode material of nano-device forms Ohmic contact with nano belt.
Adulterate Er the most as claimed in claim 13+The preparation method of CdS nano belt multi-band infrared detector, it is characterized in that, with this nano-device of the photoirradiation of different wave length, find that wavelength is 457.5 nanometers, 620 nanometers, near 955 nanometer 3 wavelength, the conductance of nano belt increases, so as a length of 457.5 nanometers of probing wave, 620 nanometers, three wave band photoconductive detectorses of 955 nanometers.
Adulterate Er the most as claimed in claim 13+The preparation method of CdS nano belt multi-band infrared detector, it is characterised in that the detectable blue light of detector, HONGGUANG and near infrared light.
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