CN103904159A - Method for lowering aluminum back emitter N-type solar battery back surface electric leakage - Google Patents
Method for lowering aluminum back emitter N-type solar battery back surface electric leakage Download PDFInfo
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- CN103904159A CN103904159A CN201410011631.3A CN201410011631A CN103904159A CN 103904159 A CN103904159 A CN 103904159A CN 201410011631 A CN201410011631 A CN 201410011631A CN 103904159 A CN103904159 A CN 103904159A
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- 238000000034 method Methods 0.000 title claims abstract description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 title abstract description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 239000008367 deionised water Substances 0.000 claims abstract description 12
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000126 substance Substances 0.000 claims description 9
- 238000003631 wet chemical etching Methods 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 7
- 241000084978 Rena Species 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 2
- 238000012545 processing Methods 0.000 abstract 2
- 238000005406 washing Methods 0.000 abstract 2
- 238000012993 chemical processing Methods 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 238000007704 wet chemistry method Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention discloses a method for lowering aluminum back emitter N-type solar battery back surface electric leakage. Single-face wet chemistry corrosion equipment is used, a silicon wafer back surface with a growing passive film is subjected to chemical processing, and the method comprises the steps that (1) processing in a 5wt% HF solution is carried out for 25 s-35 s; (2) deionized water washing is carried out; (3) under the condition of 82 DEG C-88 DEG C, processing in 20wt% NaOH solution is carried out for 25 s-35 s; and (4) deionized water washing is carried out. The phenomenon of frequent back surface edge electric leakage of an N-type battery can be effectively lowered, and battery efficiency is improved.
Description
Technical field
The present invention relates to a kind of preparation method of N-type solar cell, be specifically related to a kind of method that reduces aluminized emitter N-type solar battery back of the body surface leakage.
Background technology
In recent years, along with the development of battery technology of preparing, originally the technical barrier of puzzlement N type silicon solar cell is captured gradually, and the P type silicon solar cell efficiency of main flow can be stabilized in more than 18% at present, want in the situation that not increasing cost further to improve very difficult, and the minority carrier of N-type silicon is more much higher than P type silicon chip.The minority carrier life time of General N type silicon is more than 100 μ s, and N-type silicon substrate is conducive to improve the photoelectric efficiency of solar cell, and the room for promotion of its technique and efficiency is very large, therefore recently receives very high concern.The highest record of N-type silicon solar cell efficiency is 23.4% at present, adopts PERL structure, on 1 Ω cm FZ silicon chip, obtains.P type silicon solar cell cost is lower, and attenuation rate is higher, and " boron oxygen to " that after 25 years, attenuation rate can reach 15% to 20%, P type silicon substrate causes efficiency attenuation problem, adopts N type silicon substrate there is no this problem.N-type silicon solar cell has multiple implementation, except can emitter junction be made in front, the back side, two-sided, can also make the structures such as SE, EWT, PERL, MWT and HIT.
The making flow process of conventional aluminized emitter is similar to the flow process of conventional P type solar cell, is mainly that silicon substrate and electrode fabrication are slightly different.The industrialization that the manufacture craft of aluminized emitter can realize from P type silicon solar cell to N type silicon solar cell manufacturing process is shifted.Unique different difference is that making surface field (FSF) with phosphorus diffusing step replaces emitter, and forms aluminium back surface field in co-sintering operation.This process costs is low, simple to operate, is easy to realize industrialization, has certain Research Significance in existing market situation.But the cell piece of making by the production method of conventional aluminized emitter battery, removes the unclean situation that often occurs back of the body surface leakage because of back of the body marginal surface region N+ layer, the existence of this electric leakage causes battery efficiency significantly to reduce.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of method that reduces aluminized emitter N-type solar battery back of the body surface leakage, can effectively reduce the normal back of the body marginal surface electric leakage situation occurring of N-type battery, improves battery efficiency.
The technical scheme that technical solution problem of the present invention adopts is: a kind of method that reduces aluminized emitter N-type solar battery back of the body surface leakage, it is characterized in that: adopt one side wet-chemical etching equipment, chemical treatment is carried out in silicon chip back of the body surface after growth of passivation film, the steps include:
(1) in 5wt% HF solution, process 25～35s;
(2) deionized water rinsing;
Under (3) 82～88 DEG C of conditions, in 20wt% NaOH solution, process 25～35s;
(4) deionized water rinsing.
Preferred as one, described one side wet-chemical etching equipment is Schmid or RENA wet etching machine bench.
The present invention utilizes one side wet-chemical etching equipment, HF short time immersion treatment can be removed and in passivating film preparation process, carry on the back the thicker passivation film that marginal surface forms, N+ layer under passivation film can be reacted with NaOH, and the N+ layer that reaches back of the body marginal surface region corrodes clean effect.NaOH immersion treatment can be eliminated and in phosphorus diffusion process, carry on the back surperficial Local Gravity And doping N+ layer, while making to republish aluminium paste with formation back side P-N knot below, greatly reduce the concentration of aluminium paste compensation phosphorus impurities, and avoid the generation of the edge current leakage situation that the existence of back side N+ layer brings.NaOH immersion treatment also plays the effect of chemical polishing to carrying on the back surface, form the back side pattern of smooth planar, and this coordinates the desirable light trapping structure of formation with the texturing pattern of front surface, increase photo-generated carrier, has reduced the compound of back of the body surface simultaneously.
The invention has the beneficial effects as follows: adopt the present invention can effectively reduce the normal back of the body marginal surface electric leakage situation occurring of N-type battery, improve battery efficiency.
Embodiment
Embodiment 1: a kind of method that reduces aluminized emitter N-type solar battery back of the body surface leakage, chemical treatment is carried out in the silicon chip back of the body surface after growth of passivation film, the method for this back of the body chemical surface treatment has adopted Schmid one side wet-chemical etching equipment, the steps include:
(1) in 5wt% HF solution, process 35s;
(2) deionized water rinsing;
Under (3) 82 DEG C of conditions, in 20wt% NaOH solution, process 35s;
(4) deionized water rinsing.
Embodiment 2: the another kind of method that reduces aluminized emitter N-type solar battery back of the body surface leakage, chemical treatment is carried out in the silicon chip back of the body surface after growth of passivation film, the method for this back of the body chemical surface treatment has adopted RENA one side wet-chemical etching equipment, the steps include:
(1) in 5wt%HF solution, process 30s;
(2) deionized water rinsing;
Under (3) 85 DEG C of conditions, in 20wt%NaOH solution, process 30s;
(4) deionized water rinsing.
Embodiment 3: another reduces the method for aluminized emitter N-type solar battery back of the body surface leakage, carries out chemical treatment to the silicon chip back of the body surface after growth of passivation film, and the method for this back of the body chemical surface treatment has adopted RENA one side wet-chemical etching equipment, the steps include:
(1) in 5wt%HF solution, process 25s;
(2) deionized water rinsing;
Under (3) 88 DEG C of conditions, in 20wt% NaOH solution, process 25s;
(4) deionized water rinsing.
Claims (2)
1. a method that reduces aluminized emitter N-type solar battery back of the body surface leakage, is characterized in that: adopt one side wet-chemical etching equipment, chemical treatment is carried out in the silicon chip back of the body surface after growth of passivation film, the steps include:
(1) in 5wt%HF solution, process 25～35s;
(2) with deionized water rinsing;
Under (3) 82～88 DEG C of conditions, in 20wt%NaOH solution, process 25～35s;
(4) use deionized water rinsing.
2. a kind of method that reduces aluminized emitter N-type solar battery back of the body surface leakage as claimed in claim 1, is characterized in that: described one side wet-chemical etching equipment is Schmid or RENA wet etching machine bench.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410011631.3A CN103904159A (en) | 2014-01-10 | 2014-01-10 | Method for lowering aluminum back emitter N-type solar battery back surface electric leakage |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410011631.3A CN103904159A (en) | 2014-01-10 | 2014-01-10 | Method for lowering aluminum back emitter N-type solar battery back surface electric leakage |
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| Publication Number | Publication Date |
|---|---|
| CN103904159A true CN103904159A (en) | 2014-07-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201410011631.3A Pending CN103904159A (en) | 2014-01-10 | 2014-01-10 | Method for lowering aluminum back emitter N-type solar battery back surface electric leakage |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016054917A1 (en) * | 2014-10-08 | 2016-04-14 | 上海神舟新能源发展有限公司 | Wet-etching method for n-type double-sided battery |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101853897A (en) * | 2010-03-31 | 2010-10-06 | 晶澳(扬州)太阳能光伏工程有限公司 | Method for preparing N-type crystalline silicon solar cell with aluminum-based local emitters on back side |
| CN101882650A (en) * | 2010-06-29 | 2010-11-10 | 常州大学 | Preparation method of solar cell with buried charge layer |
| CN102315284A (en) * | 2011-07-04 | 2012-01-11 | 常州天合光能有限公司 | Cell structure capable of realizing simultaneous passivation of P-type and N-type doped layers by using laminated film and method thereof |
| CN102456771A (en) * | 2010-10-22 | 2012-05-16 | 华康半导体股份有限公司 | Method for manufacturing silicon wafer solar cell |
-
2014
- 2014-01-10 CN CN201410011631.3A patent/CN103904159A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101853897A (en) * | 2010-03-31 | 2010-10-06 | 晶澳(扬州)太阳能光伏工程有限公司 | Method for preparing N-type crystalline silicon solar cell with aluminum-based local emitters on back side |
| CN101882650A (en) * | 2010-06-29 | 2010-11-10 | 常州大学 | Preparation method of solar cell with buried charge layer |
| CN102456771A (en) * | 2010-10-22 | 2012-05-16 | 华康半导体股份有限公司 | Method for manufacturing silicon wafer solar cell |
| CN102315284A (en) * | 2011-07-04 | 2012-01-11 | 常州天合光能有限公司 | Cell structure capable of realizing simultaneous passivation of P-type and N-type doped layers by using laminated film and method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016054917A1 (en) * | 2014-10-08 | 2016-04-14 | 上海神舟新能源发展有限公司 | Wet-etching method for n-type double-sided battery |
| EP3190633A4 (en) * | 2014-10-08 | 2018-07-25 | Shanghai Shenzhou New Energy Development Co. Ltd. | Wet-etching method for n-type double-sided battery |
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Application publication date: 20140702 |