CN103903978B - Engraving method - Google Patents
Engraving method Download PDFInfo
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- CN103903978B CN103903978B CN201210579179.1A CN201210579179A CN103903978B CN 103903978 B CN103903978 B CN 103903978B CN 201210579179 A CN201210579179 A CN 201210579179A CN 103903978 B CN103903978 B CN 103903978B
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- Prior art keywords
- insulating barrier
- gas
- contact hole
- fluorocarbon gas
- oxygen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
Abstract
The present invention provides a kind of engraving method, comprises the following steps: to provide a substrate；Form an insulating barrier on this substrate；Form a patterning cover curtain layer on this insulating barrier；And this insulating barrier is etched by importing one mixed gas, in order to form a perforation in this insulating barrier, wherein this mixed gas includes one first fluorocarbon gas and an oxygen, and the ratio of this first fluorocarbon gas and this oxygen is between 2:1 ~ 2:3.
Description
Technical field
The present invention relates to a kind of semiconductor manufacturing process, contact hole CD can be effectively improved particularly to one
The engraving method of value.
Background technology
For adapting to the demand of high aggregation degree, the miniaturization of semiconductor element acceleration, therefore, the most just
There is the demand reducing such as contact hole (contact hole) size.But form the interlayer insulating film palpus of contact hole
Possess a certain specific thicknesses, can reduce dead resistance, therefore, must be to form the etching side of high-aspect-ratio
Method carries out the making of contact hole.
Through frequently as in the example of silicon oxide (silicon oxide) layer of interlayer insulating film, available low fluorine/
The fluorocarbon gas of carbon ratio carries out dry ecthing, to form the contact hole with high-aspect-ratio.
In the above-mentioned method utilizing fluorocarbon gas to promote etching selectivity, have one and comprise carbon and fluorine atom
Polymeric membrane be deposited on bottom contact hole, and this polymeric membrane can remove via oxygen plasma.
But, during making contact hole with engraving method, if (flow) between fluorocarbon gas and oxygen
Ratio adjusts the best, will affect etching selectivity, causes to etch the CD (critical of formed contact hole
Dimension) value (that is, critical dimension) is the best, affects etch effect.
Therefore, attempt obtaining in every way (flow) ratio between suitable fluorocarbon gas and oxygen with
The contact hole making high-aspect-ratio appropriateness is the direction of those skilled in the art's ongoing effort all the time.
Summary of the invention
The present invention provides a kind of engraving method, comprises the following steps: to provide a substrate；Form an insulating barrier
On this substrate；Form a patterning cover curtain layer on this insulating barrier；And import a mixed gas to this
Insulating barrier is etched, and to form a perforation in this insulating barrier, wherein this mixed gas includes one first
Fluorine carbon (fluorocarbon) gas and an oxygen, and the ratio of this first fluorocarbon gas and this oxygen between
2:1~2:3。
This substrate is silicon substrate.
This insulating barrier includes silicon oxide, silicon nitride or a combination thereof.
This patterning cover curtain layer includes Pyrex (borosilicate glass, BSG), phosphorosilicate glass
(phosphosilicate glass, PSG), boron-phosphorosilicate glass (boron-phosphosilicate glass, BPSG)
Or tetraethoxysilane (tetraethoxysilane, TEOS).
By reactive ion etching (reactive ion etching, RIE) method, this insulating barrier is lost
Carve.
This first fluorocarbon gas is preferably difluoromethane (CH2F2)。
This engraving method also includes that importing one second fluorocarbon gas is etched this insulating barrier, wherein this
Two fluorocarbon gas include Perfluorocyclobutane (C4F8), octafluoro cyclopentenes (C5F8) or hexachlorobutadiene (C4F6)。
The flow proportional of this second fluorocarbon gas and this oxygen is between 1:1 ~ 3:10.
The flow proportional of this second fluorocarbon gas and this first fluorocarbon gas is between 3:20 ~ 5:20.
This perforation is contact hole (contact hole).
In the method for etching interlayer insulating film, the present invention is by adding such as Perfluorocyclobutane (C4F8), eight
Fluorine cyclopentenes (C5F8) or hexachlorobutadiene (C4F6) etc. fluorine/carbon ratio be generally below 2 fluorine carbon (fluorocarbon)
Gas and (flow) ratio between fluorocarbon gas and oxygen of adjusting in mixed gas to a special ratios, with
Obtain suitable etching selectivity, improve CD (critical dimension) value etching formed contact hole,
Reach good etch effect.
For the above-mentioned purpose of the present invention, feature and advantage can be become apparent, cited below particularly one is the most real
Execute example, be described in detail below:
Accompanying drawing explanation
Fig. 1 is the schematic diagram etching contact hole in the embodiment of the present invention 1；
Fig. 2 is the schematic diagram etching contact hole in the embodiment of the present invention 2；
Fig. 3 is the schematic diagram etching contact hole in the embodiment of the present invention 3；
Fig. 4 is the schematic diagram etching contact hole in the embodiment of the present invention 4；
Fig. 5 is the schematic diagram etching contact hole in the embodiment of the present invention 5.
Detailed description of the invention
The present invention provides a kind of engraving method, comprises the following steps:
First, it is provided that a substrate.In an embodiment, aforesaid substrate can be silicon substrate.
Afterwards, an insulating barrier is formed on substrate.In an embodiment, can be deposited by such as chemical gaseous phase
(chemical vapor deposition, CVD) method forms an insulating barrier on substrate.In an embodiment,
Above-mentioned insulating barrier can include silicon oxide, silicon nitride or a combination thereof.
Then, a patterning cover curtain layer is formed on insulating barrier.In an embodiment, can be by such as chemistry
Vapour deposition (chemical vapor deposition, CVD) and etching (patterning) method form patterning cover
Curtain layer is on insulating barrier.In an embodiment, above-mentioned patterning cover curtain layer can include Pyrex (borosilicate
Glass, BSG), phosphorosilicate glass (phosphosilicate glass, PSG), boron-phosphorosilicate glass
(boron-phosphosilicate glass, BPSG) or tetraethoxysilane (tetraethoxysilane, TEOS).
Afterwards, import a mixed gas and insulating barrier is etched, form a perforation in a insulating layer with flat.
In an embodiment, can be by such as reactive ion etching (reactive ion etching, RIE) method to absolutely
Edge layer is etched.In an embodiment, above-mentioned mixed gas can include one first fluorine carbon (fluorocarbon)
Gas and an oxygen.In an embodiment, the ratio of above-mentioned first fluorocarbon gas and oxygen substantially between
2:1~2:3.In an embodiment, above-mentioned first fluorocarbon gas can be difluoromethane (CH2F2).Noticeable
It is to present invention additionally comprises importing one second fluorocarbon gas and insulating barrier is etched.In an embodiment, on
State the second fluorocarbon gas and can include Perfluorocyclobutane (C4F8), octafluoro cyclopentenes (C5F8) or hexachlorobutadiene
(C4F6).In an embodiment, above-mentioned first fluorocarbon gas and the flow proportional of oxygen are substantially between 2:1 ~ 4:1.
In an embodiment, above-mentioned second fluorocarbon gas and the flow proportional of oxygen are substantially between 1:1 ~ 3:10.In reality
Executing in example, the flow proportional of above-mentioned second fluorocarbon gas and the first fluorocarbon gas is substantially between 3:20 ~ 5:20.
In an embodiment, above-mentioned perforation can be contact hole (contact hole).
In the method for etching interlayer insulating film, the present invention is by adding such as Perfluorocyclobutane (C4F8), eight
Fluorine cyclopentenes (C5F8) or hexachlorobutadiene (C4F6) etc. fluorine/carbon ratio be generally below 2 fluorine carbon (fluorocarbon)
Gas and (flow) ratio between fluorocarbon gas and oxygen of adjusting in mixed gas to a special ratios, with
Obtain suitable etching selectivity, improve the CD value etching formed contact hole, reach good etch effect.
[embodiment]
[embodiment 1]
The making (1) of contact hole
First, it is provided that a silicon substrate.Afterwards, by chemical gaseous phase deposit (chemical vapor deposition,
CVD) method forms a silicon nitride layer (thickness is 251nm) on silicon substrate.Then, chemical gaseous phase is passed through
Deposition (CVD) and etching (patterning) method formed one pattern Pyrex (borosilicate glass,
BSG) cover curtain layer (thickness is 230nm) is on silicon nitride layer.Afterwards, import by difluoromethane (CH2F2)
Gas and oxygen (O2) mixed gas that formed, by reactive ion etching (reactive ion etching,
RIE) silicon nitride layer is etched by method, in order to form a contact hole (contact in the silicon nitride layer
hole).Above-mentioned reactive ion etching (reactive ion etching, RIE) method condition is as follows, cavity pressure
Power is 40mTorr, and etching power is 650Ws/500Wb, difluoromethane (CH2F2) gas flow is
20sccm, oxygen flow is 10sccm, and argon flow amount is 200sccm, difluoromethane (CH2F2) gas with
The ratio of oxygen is 2:3.After above-mentioned etching step, on relevant Pyrex (BSG) residual, contact hole
The numerical value such as portion's CD value, contact hole bottom CD value, CD difference value and silicon substrate loss (Si loss) are all remembered
It is provided in the table below 1, and simultaneously refering to Fig. 1 (SEM figure), after above-mentioned etching step, formed contact hole
Schematic diagram.
[embodiment 2]
The making (2) of contact hole
First, it is provided that a silicon substrate.Afterwards, by chemical gaseous phase deposit (chemical vapor deposition,
CVD) method forms a silicon nitride layer (thickness is 239nm) on silicon substrate.Then, chemical gaseous phase is passed through
Deposition (CVD) and etching (patterning) method formed one pattern tetraethoxysilane (tetraethoxysilane,
TEOS) cover curtain layer (thickness is 270nm) is on silicon nitride layer.Afterwards, import by difluoromethane (CH2F2)
Gas and oxygen (O2) mixed gas that formed, by reactive ion etching (reactive ion etching,
RIE) silicon nitride layer is etched by method, in order to form a contact hole (contact in the silicon nitride layer
hole).Above-mentioned reactive ion etching (reactive ion etching, RIE) method condition is as follows, cavity pressure
Power is 40mTorr, and etching power is 650Ws/500Wb, difluoromethane (CH2F2) gas flow is
20sccm, oxygen flow is 10sccm, and argon flow amount is 200sccm, difluoromethane (CH2F2) gas with
The ratio of oxygen is 2:2.After above-mentioned etching step, relevant tetraethoxysilane (TEOS) remains, connects
The numbers such as contact hole top CD value, contact hole bottom CD value, CD difference value and silicon substrate loss (Si loss)
Value is all recorded in table 1 below, and simultaneously refering to Fig. 2 (SEM figure), after above-mentioned etching step, is formed and connect
The schematic diagram of contact hole.
[embodiment 3]
The making (3) of contact hole
First, it is provided that a silicon substrate.Afterwards, by chemical gaseous phase deposit (chemical vapor deposition,
CVD) method forms a silicon nitride layer (thickness is 241nm) on silicon substrate.Then, chemical gaseous phase is passed through
Deposition (CVD) and etching (patterning) method formed one pattern tetraethoxysilane (tetraethoxysilane,
TEOS) cover curtain layer (thickness is 270nm) is on silicon nitride layer.Afterwards, import by difluoromethane (CH2F2)
Gas and oxygen (O2) mixed gas that formed, by reactive ion etching (reactive ion etching,
RIE) silicon nitride layer is etched by method, in order to form a contact hole (contact in the silicon nitride layer
hole).Above-mentioned reactive ion etching (reactive ion etching, RIE) method condition is as follows, cavity pressure
Power is 40mTorr, and etching power is 650Ws/500Wb, difluoromethane (CH2F2) gas flow is
20sccm, oxygen flow is 10sccm, and argon flow amount is 200sccm, difluoromethane (CH2F2) gas with
The ratio of oxygen is 2:1.After above-mentioned etching step, relevant tetraethoxysilane (TEOS) remains, connects
The numbers such as contact hole top CD value, contact hole bottom CD value, CD difference value and silicon substrate loss (Si loss)
Value is all recorded in table 1 below, and simultaneously refering to Fig. 3 (SEM figure), after above-mentioned etching step, is formed and connect
The schematic diagram of contact hole.
[embodiment 4]
The making (4) of contact hole
First, it is provided that a silicon substrate.Afterwards, by chemical gaseous phase deposit (chemical vapor deposition,
CVD) method forms a silicon nitride layer (thickness is 252nm) on silicon substrate.Then, chemical gaseous phase is passed through
Deposition (CVD) and etching (patterning) method formed one pattern tetraethoxysilane (tetraethoxysilane,
TEOS) cover curtain layer (thickness is 270nm) is on silicon nitride layer.Afterwards, import by difluoromethane (CH2F2)
Gas, oxygen (O2) and hexachlorobutadiene (C4F6) mixed gas that gas is formed, pass through reactive ion
Silicon nitride layer is etched by etching (reactive ion etching, RIE) method, in order in the silicon nitride layer
Form a contact hole (contact hole).Above-mentioned reactive ion etching (reactive ion etching, RIE) side
Method condition is as follows, and chamber pressure is 35mTorr, and etching power is 650Ws/500Wb, difluoromethane
(CH2F2) gas flow is 20sccm, oxygen flow is 5sccm, hexachlorobutadiene (C4F6) gas flow
For 5sccm, argon flow amount is 200sccm.After above-mentioned etching step, relevant tetraethoxysilane (TEOS)
The numerical value such as residual, contact hole top CD value, contact hole bottom CD value, CD difference value is all recorded in down
Table 1, and simultaneously refering to Fig. 4 (SEM figure), after above-mentioned etching step, the schematic diagram of formed contact hole.
[embodiment 5]
The making (5) of contact hole
First, it is provided that a silicon substrate.Afterwards, by chemical gaseous phase deposit (chemical vapor deposition,
CVD) method forms a silicon nitride layer on silicon substrate.Then, by chemical gaseous phase deposition (CVD) and erosion
(patterning) method of quarter forms patterning tetraethoxysilane (tetraethoxysilane, a TEOS) cover curtain layer
(thickness is 270nm) is on silicon nitride layer.Afterwards, import by difluoromethane (CH2F2) gas, oxygen (O2)
With octafluoro cyclopentenes (C5F8) mixed gas that formed of gas, by reactive ion etching (reactive
Ion etching, RIE) silicon nitride layer is etched by method, in order to form a contact hole in the silicon nitride layer
(contact hole).Above-mentioned reactive ion etching (reactive ion etching, RIE) method condition is as follows,
Chamber pressure is 40mTorr, and etching power is 650Ws/500Wb, difluoromethane (CH2F2) gas flow
For 20sccm, oxygen flow is 10sccm, octafluoro cyclopentenes (C5F8) gas flow is 3sccm, argon
Flow is 200sccm.Refer to Fig. 5 (SEM figure), after above-mentioned etching step, formed contact hole
Schematic diagram.
Table 1
Although the present invention is open as above with preferred embodiment, so it is not limited to the present invention, any
Those skilled in the art, without departing from the spirit and scope of the present invention, when changing and retouching, because of
This protection scope of the present invention is when being as the criterion depending on the defined person of appended claims.
Claims (6)
1. an engraving method, comprises the following steps:
One substrate is provided；
Form an insulating barrier on described substrate；
Form a patterning cover curtain layer on described insulating barrier；And
Import a mixed gas described insulating barrier is etched, wear in order to form one in described insulating barrier
Hole, wherein said mixed gas includes one first fluorocarbon gas, one second fluorocarbon gas and an oxygen, and
The ratio of described first fluorocarbon gas and described oxygen is between 2:1～2:3, and described first fluorocarbon gas is difluoro
Methane, described second fluorocarbon gas includes Perfluorocyclobutane, octafluoro cyclopentenes or hexachlorobutadiene, described
The flow proportional of the second fluorocarbon gas and described first fluorocarbon gas is between 3:20～5:20.
2. engraving method as claimed in claim 1, it is characterised in that described substrate is silicon substrate.
3. engraving method as claimed in claim 1, it is characterised in that described insulating barrier includes oxidation
Silicon, silicon nitride or a combination thereof.
4. engraving method as claimed in claim 1, it is characterised in that described patterning cover curtain layer bag
Include Pyrex, phosphorosilicate glass, boron-phosphorosilicate glass or tetraethoxysilane.
5. engraving method as claimed in claim 1, it is characterised in that pass through reactive ion etching
Described insulating barrier is etched by method.
6. engraving method as claimed in claim 1, it is characterised in that described perforation is contact hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210579179.1A CN103903978B (en) | 2012-12-27 | 2012-12-27 | Engraving method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210579179.1A CN103903978B (en) | 2012-12-27 | 2012-12-27 | Engraving method |
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| Publication Number | Publication Date |
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| CN103903978A CN103903978A (en) | 2014-07-02 |
| CN103903978B true CN103903978B (en) | 2016-12-28 |
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| CN201210579179.1A Active CN103903978B (en) | 2012-12-27 | 2012-12-27 | Engraving method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1224234A (en) * | 1998-01-16 | 1999-07-28 | 日本电气株式会社 | Method for etching silicon layer |
| CN1483219A (en) * | 2000-12-21 | 2004-03-17 | 东京毅力科创株式会社 | Etching method for insulating film |
| CN1650405A (en) * | 2001-08-31 | 2005-08-03 | 东京毅力科创株式会社 | Method for etching object to be processed |
| CN101140882A (en) * | 2006-09-04 | 2008-03-12 | 中芯国际集成电路制造(上海)有限公司 | Through-hole etching method |
| CN101645408A (en) * | 2008-08-04 | 2010-02-10 | 中芯国际集成电路制造(北京)有限公司 | Soldering-pan and forming method thereof |
-
2012
- 2012-12-27 CN CN201210579179.1A patent/CN103903978B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1224234A (en) * | 1998-01-16 | 1999-07-28 | 日本电气株式会社 | Method for etching silicon layer |
| CN1483219A (en) * | 2000-12-21 | 2004-03-17 | 东京毅力科创株式会社 | Etching method for insulating film |
| CN1650405A (en) * | 2001-08-31 | 2005-08-03 | 东京毅力科创株式会社 | Method for etching object to be processed |
| CN101140882A (en) * | 2006-09-04 | 2008-03-12 | 中芯国际集成电路制造(上海)有限公司 | Through-hole etching method |
| CN101645408A (en) * | 2008-08-04 | 2010-02-10 | 中芯国际集成电路制造(北京)有限公司 | Soldering-pan and forming method thereof |
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| Publication number | Publication date |
|---|---|
| CN103903978A (en) | 2014-07-02 |
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