CN103903831A - Inductor and composition for making its gap layer - Google Patents
Inductor and composition for making its gap layer Download PDFInfo
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- CN103903831A CN103903831A CN201310661007.3A CN201310661007A CN103903831A CN 103903831 A CN103903831 A CN 103903831A CN 201310661007 A CN201310661007 A CN 201310661007A CN 103903831 A CN103903831 A CN 103903831A
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- inductor
- clearance layer
- oxide
- shrinkage
- controlling agent
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- 239000000203 mixture Substances 0.000 title claims abstract description 38
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 52
- 239000003795 chemical substances by application Substances 0.000 claims description 37
- 238000004519 manufacturing process Methods 0.000 claims description 32
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 22
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 22
- 229910000859 α-Fe Inorganic materials 0.000 claims description 21
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 13
- 150000001875 compounds Chemical class 0.000 claims description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims description 12
- 150000004706 metal oxides Chemical class 0.000 claims description 12
- 230000035699 permeability Effects 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 239000000696 magnetic material Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 20
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000008602 contraction Effects 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 238000005245 sintering Methods 0.000 description 22
- 238000000034 method Methods 0.000 description 19
- 230000008569 process Effects 0.000 description 16
- 239000010936 titanium Substances 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 14
- 239000000126 substance Substances 0.000 description 12
- 230000008859 change Effects 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 239000010949 copper Substances 0.000 description 4
- 230000004523 agglutinating effect Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910007565 Zn—Cu Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 210000003298 dental enamel Anatomy 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F7/00—Compounds of aluminium
- C01F7/02—Aluminium oxide; Aluminium hydroxide; Aluminates
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G23/00—Compounds of titanium
- C01G23/04—Oxides; Hydroxides
- C01G23/047—Titanium dioxide
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
- C01G25/02—Oxides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G29/00—Compounds of bismuth
Abstract
The present invention discloses an inductor and a composition for making its gap layer. The inductor comprises a main body and a gap layer arranged inside the main body to control metal oxygen material and the contraction ratio.
Description
Quoting of related application
The application requires, in the rights and interests of the korean patent application sequence number 10-2012-0155037 that is entitled as " inductor and the composition (Inductor and Composition for Manufacturing Gap Layer thereof) for the manufacture of its clearance layer (gap layer) " of submission on December 27th, 2012, its full content to be incorporated in the application by quoting at this.
Technical field
The present invention relates to inductor and the composition for the manufacture of its clearance layer, more specifically, relate to the inductor that can there is less thickness and improve inductance performance, and for the manufacture of the composition of its clearance layer.
Background technology
Along with mobile device becomes miniaturization and multifunction, the microminaturization of electronic unit is also correspondingly carried out.In order to meet these demands, developing the film-type chip inductor that can there is reduced size and less thickness and have high inductance and high Q performance simultaneously.
General thin type chip inductor can be by forming below: the apparatus main body with sandwich construction obtaining by laminated ceramic insulating trip; On sheet, form so that the internal electrode of loop construction to be provided respectively; The outer electrode forming at the outside two ends of apparatus main body; And in apparatus main body, separate the clearance layer of internal electrode.Clearance layer is formed by nonmagnetic substance, with the magnetic flux in the middle of disconnecting apparatus main body, thereby reduces the increase of applying the inductance L value of the inductor causing by electric current.
As the material for clearance layer, use ZnCu ferrite or Zn-Ti class dielectric medium as key component, and in order to ensure its agglutinating property (sinterability), CuO is added wherein or controls to the content of Fe.That is, consider from the functional perspective of clearance layer, preferably, by the material that acts on clearance layer for complete nonmagnetic substance, nonmagnetic substance can not be guaranteed agglutinating property in the time of manufacturing installation main body completely, also adds CuO etc. although therefore produce some magnetic.
But, in the situation that clearance layer is formed by above-mentioned material, there is following problem.
The first, clearance layer makes the performance degradation of inductor.Conventionally, comprise ferrite as the clearance layer of ZnCu ferrite class material as key component in, be included in nickel (Ni) diffusion of components in apparatus main body material to clearance layer and the zinc of clearance layer (Zn) diffusion of components to apparatus main body.This diffusion phenomena cause clearance layer thickness significantly to reduce, and cause inductor DC-bias performance and bias voltage-TCL performance degradation.Need to increase the thickness of clearance layer to avoid this situation, but in the situation that clearance layer thickness increases, need to use thick clearance synusia, thereby be difficult to realize thin inductor.
The second, clearance layer makes the inductance performance of inductor deteriorated.In the existing clearance layer being formed by nonmagnetic Zn-Ti ferrite class dielectric medium, in the operating process of the sintering process for the manufacture of inductor, Ti material diffuses in apparatus main body.Especially, in the time that sintering temperature is higher, Ti material is more serious to the diffusion of apparatus main body, thereby makes the magnetic property of apparatus main body poorer, and this causes the inductance performance of inductor deteriorated.
The 3rd, because the diffusion of Fe component or the diffusion of Ni component cause inductor performance degradation., common clearance layer comprises that the CuO adding is wherein to guarantee agglutinating property.But, owing to adding CuO to make can there is magnetic for the material of clearance layer, and can increase these magnetic properties according to the addition of Cu.In addition, at room temperature for the nonmagnetic substance of clearance layer under about 900 DEG C or higher sintering temperature because the diffusion of Fe has magnetic.This diffusion phenomena cause the deteriorated of apparatus main body magnetic property, thereby cause the inductance of inductor to reduce.
[correlation technique document]
[patent documentation]
(patent documentation 1) korean patent application publication number 10-2011-0116041
(patent documentation 2) korean patent application publication number 10-2010-0127878
Summary of the invention
An object of the present invention is to provide the inductor that can prevent clearance layer diffusion phenomena, thereby improve its DC-bias performance and bias voltage-TCL performance.
Another object of the present invention is to provide the inductor of the inductance performance can with less thickness and improvement.
Another object of the present invention is to provide the composition for the manufacture of clearance layer, and it can prevent the diffusion phenomena of clearance layer, thereby improves DC-bias performance and bias voltage-TCL performance of inductor.
Another object of the present invention is to provide the composition for the manufacture of inductor clearance layer, the inductance performance that it can reduce the thickness of inductor and improve inductor.
According to an exemplary embodiment of the present invention, inductor is provided, comprising: apparatus main body; With to be arranged on apparatus main body inner and have a clearance layer of metal oxide and shrinkage controlling agent (shrinkage ratio controller).
Metal oxide can comprise zirconium dioxide (ZrO
2), aluminium oxide (Al
2o
3) and titanium dioxide (TiO
2) at least one.
Shrinkage controlling agent can comprise bismuth oxide (Bi
2o
3), at least one in Bi-Li compounds oxide (based on the oxide of Bi-Li compound) and Bi-B compounds oxide (based on the oxide of Bi-B compound).
The clearance layer of inductor can have 4 or lower magnetic permeability (permeability, permeability).
Metal oxide can be the zirconia with 0.25 μ m or less average grain diameter.
Clearance layer can have 20 μ m or less thickness.
Clearance layer can have 10.00% or higher shrinkage.
Shrinkage controlling agent can be bismuth oxide, and in clearance layer, the content of bismuth is lower than 1.3wt%.
Apparatus main body can form by multiple, and the each free NiZnCu ferrite class magnetic material of these sheets is made.
According to another illustrative embodiments of the present invention, provide for the manufacture of the composition that is arranged on the clearance layer in inductor arrangement main body, said composition comprises metal oxide and shrinkage controlling agent.
Metal oxide can be zirconium dioxide (ZrO
2), aluminium oxide (Al
2o
3) and titanium dioxide (TiO
2) at least one, and shrinkage controlling agent can comprise bismuth oxide (Bi
2o
3), at least one in Bi-Li compounds oxide and Bi-B compounds oxide.
Metal oxide can be zirconium dioxide (ZrO
2), and shrinkage controlling agent can be bismuth oxide (Bi
2o
3), the content ratio of zirconia and bismuth oxide is 98.75:1.25 to 95.00:5.00.
Based on zirconia, can add shrinkage controlling agent with content more than 1.00mol%.
Based on zirconia, can be to add shrinkage controlling agent lower than the content of 5.00mol%.
Zirconia can comprise the zirconium dioxide with 0.25 μ m or less average grain diameter.
Brief description of the drawings
Fig. 1 is the sectional view of inductor according to one exemplary embodiment;
Fig. 2 be illustrate according to direct current is applied to according to each inductor of exemplary embodiment of the invention and have the clearance layer being formed by Ti sill inductor inductance change curve chart;
Fig. 3 illustrates according to ZrO
2and Bi
2o
3the shrinkage curve chart of two components composition ratios;
Fig. 4 illustrates with according to the curve chart of the initial inductance value of the varied in thickness of the inductor clearance layer of exemplary embodiment of the invention;
Fig. 5 is the curve chart illustrating with the inductance value of the DC-bias variations by causing according to the varied in thickness of the inductor clearance layer of exemplary embodiment of the invention; And
Fig. 6 illustrates with according to the curve chart of the DC-bias voltage of the variations in temperature of the inductor of exemplary embodiment of the invention (TCL-bias voltage) performance.
Embodiment
With reference to accompanying drawing, the present invention and the various advantages and the feature that realize its method will become apparent from following embodiment.But the present invention can revise in many different forms and it should not be limited to illustrative embodiments set forth herein.On the contrary, it will be detailed and complete to make this disclosure that these execution modes can be provided, and scope of the present invention is conveyed to those skilled in the art completely.Reference numeral identical in whole specification represents similar elements.
The term using in this specification is for explaining illustrative embodiments instead of restriction the present invention.In specification, unless stated otherwise, otherwise odd number type also can be used as complex data type.Word " comprise (comprise) " and such as " comprising (comprises) " or " containing (comprising) " etc. variant be interpreted as representing to comprise described composition (constituent), step, operation and/or element (key element), and do not represent to get rid of any other composition, step, operation and/or element (key element).
Hereinafter, describe in detail with reference to the accompanying drawings according to the inductor of exemplary embodiment of the invention with for the manufacture of the composition of inductor clearance layer.
Fig. 1 is the sectional view of inductor according to one exemplary embodiment.With reference to Fig. 1, can comprise apparatus main body 110, electrode structure 120 and clearance layer 130 according to the inductor 100 of exemplary embodiment of the invention.
Apparatus main body 110 can have the sandwich construction forming by multiple 112.Can form sheet 112 by the multiple nonmagnetic ceramic insulating trips of lamination or ferrite magnetic sheet.Each 112 can be the sheet of being made up of ferrite class magnetic material.More specifically, each 112 can be the magnetic sheet of being made up of Ni-Zn-Cu ferrite.Ni-Zn-Cu ferrite can be that selectivity comprises Fe
2o
3, NiO, ZnO and CuO ferrite.Alternatively, can further comprise cobalt (Co), manganese (Mn), tin (Sn), bismuth (Bi) or other many kinds of substances as the material for magnetic sheet.
Electrode structure 120 can have the internal electrode 122 that is arranged on apparatus main body 110 inside and the outer electrode 124 that is arranged on apparatus main body 110 outsides.Internal electrode 122 can have the structure of the lattice coil being wherein made up of the circuit pattern forming on sheet 112 respectively.Internal electrode 122 can be the circuit pattern of silver (Ag) material.Outer electrode 124 can be used for inductor 100 to be electrically connected to external electronic (not shown).The two ends that outer electrode 124 can be separately positioned on apparatus main body 110 are electrically connected to internal electrode 122 simultaneously.Outer electrode 124 can be made up of the metal level as outer end and coating (plating layers), and coating is made and passed through by nickel (Ni) or tin (Sn) and forms in the enterprising electroplating technique of metal level (plating process).
Clearance layer 130 can be arranged between the sheet 112 of apparatus main body 110 inside.Clearance layer 130 is parallel to sheet 112 and arranges and be arranged between sheet 112 simultaneously, and apparatus main body 110 can be divided into multiple regions.The magnetic field that can block by clearance layer 130 each region generating, makes to minimize the magnetic fluxes between region.Consider magnetic field block function, can be preferably by using complete nonmagnetic substance to obtain clearance layer 130.
Clearance layer 130 can have insulating material for high temperature sintering as key component.For the insulating material of high temperature sintering may be defined as when under approximately 800 DEG C or higher high temperature, carry out for the manufacture of inductor 100 sintering process time the insulating material that uses.For example, can use zirconium dioxide (ZrO
2) as the insulating material for high temperature sintering.As another embodiment, can use aluminium oxide (Al
2o
3) and titanium dioxide (TiO
2) at least one as the insulating material for high temperature sintering.Zirconium dioxide can preferably have approximately 0.25 μ m or less, the more preferably average grain diameter of 0.20 μ m.At this, average grain diameter may be defined as confirmable average particulate diameter in the sample of preliminary dimension.For example, can be by using particle size analyzer that the diameter as the some place of approximately 50% correspondence of the particle diameter cumulative distribution of sample analysis result is defined as to average particulate diameter.If the average grain diameter of zirconium dioxide exceedes 0.25 μ m, can reduce the shrinkage of clearance layer 130.
Clearance layer 130 can comprise the residue joining for the manufacture of the shrinkage controlling agent of the composition of clearance layer 130.The shrinkage of clearance layer 130 can be identical with the shrinkage of apparatus main body 110, when it appears at manufacturing installation main body 110, and in this case, can improve the manufacture efficiency of inductor 100.More specifically, in the situation that sintering process process intermediate gap layer 130 and apparatus main body 110 have different shrinkage, this difference of shrinkage can cause defective workmanship, for example, and layering or the crack of the interface between clearance layer 130 and apparatus main body 110.Therefore, can provide shrinkage controlling agent so that the difference of above-mentioned shrinkage minimizes.In addition, even, in the time that clearance layer 130 and apparatus main body 110 have low bond strength each other, above-mentioned defect also can occur.Therefore, can preferably use the material that can improve bond strength between clearance layer 130 and apparatus main body 110 as shrinkage controlling agent.
For example, can use bismuth oxide (Bi
2o
3) as shrinkage controlling agent.As another embodiment, can use at least one in Bi-Li compounds oxide and Bi-B compounds oxide as shrinkage controlling agent.In the time that bismuth oxide is used as to shrinkage controlling agent, bismuth oxide (Bi
2o
3) become material for controlling clearance layer 130 shrinkages of being made by zirconium dioxide, material for high temperature sintering.Can preferably control its addition, make the shrinkage of clearance layer 130 be about 10.00% or higher.
In addition, can comprise shrinkage controlling agent makes to comprise it more than about 0.1wt% based on clearance layer 130 in the finished product after sintering.If the content of shrinkage controlling agent, lower than 0.1wt%, cannot fully be guaranteed its shrinkage in the sintering process operating process for the manufacture of clearance layer 130, cause reducing the efficiency of manufacturing process.When by bismuth oxide when the shrinkage controlling agent, wherein some can be in sintering process operating process by heating evaporation and remove, thereby compared with the initial content of the composition for the preparation of clearance layer, can its content of slight reduction.The content of shrinkage controlling agent can be more than 0.1wt%, and it is the numerical value of considering that some shrinkage controlling agents are removed in sintering process.Use description to subsequently prepare the preferred content of shrinkage controlling agent in the composition of clearance layer.
Meanwhile, the thickness of clearance layer 130 (T1) can be controlled in approximately 25 μ m or less.Use ZnCu ferrite or Zn-Ti class dielectric medium need to there is at least 30 μ m or larger thickness as the clearance layer of key component, to show the function as clearance layer.But, because clearance layer 130 has zirconia (nonmagnetic substance completely) as key component, even when the thickness (T1) of clearance layer 130 is controlled at 25 μ m or less or be controlled at further 15 μ m or more hour, clearance layer 130 also can fully show the function as clearance layer.
Fig. 2 be illustrate according to direct current is applied to according to the inductor of exemplary embodiment of the invention and have the clearance layer being formed by Ti sill inductor inductance change curve chart.With reference to Fig. 2, compared with the inductance change curve (20) of the clearance layer of being made by Ti base nonmagnetic substance, under the sintering temperature of approximately 900 DEG C, there is relatively low variation according to the inductance change curve (10) of the clearance layer 130 of exemplary embodiment of the invention.Therefore,, compared with the clearance layer of being made by Ti base nonmagnetic substance, can provide and there is the relatively clearance layer of the present invention 130 of minimal thickness.The clearance layer of, being made up of general T i base nonmagnetic substance need to have the thickness of at least 30 μ m to guarantee the DC-bias performance of inductor.But, even provide have lower than 25 μ m or less and further lower than 20 μ m thickness according to the clearance layer 130 of exemplary embodiment of the invention, also can guarantee the DC-bias performance of inductor 100.When the thickness of clearance layer 130 like this hour, can relatively increase the thickness of apparatus main body 110, cause the increase of internal electrode 122 numbers of plies, thereby increase the inductance of inductor 100.
Fig. 3 illustrates according to ZrO
2and Bi
2o
3the curve chart of the shrinkage of two components composition ratios.With reference to Fig. 3, can determine, for for the manufacture of according to the composition of the clearance layer 130 of exemplary embodiment of the invention, when by bismuth oxide (Bi
2o
3) as shrinkage controlling agent, and based on ZrO
2: Bi
2o
3content during than 98.75:1.25, the content of shrinkage controlling agent, higher than base value, is improved the effect of shrinkage (%).Therefore, can determine, if based on ZrO
2the content of shrinkage controlling agent be more than about 1.00mol%, be improved the effect of shrinkage (%).Can expect, if based on composition, the content of shrinkage controlling agent is lower than 1.00mol%, insufficiently in the sintering process operating process for the manufacture of clearance layer 130 guarantees shrinkage.
Fig. 4 illustrates with according to the curve chart of the initial inductance value of the varied in thickness of the inductor clearance layer of exemplary embodiment of the invention.With reference to Fig. 4, to manufacture according to the inductor of exemplary embodiment of the invention, the thickness that makes clearance layer 130 is 5 μ m, 7 μ m and 10 μ m.Subsequently, calculate the inductance curve 11,13 and 15 of inductor, then compare with the inductance curve 22 of inductor (clearance layer that wherein, 20 μ m are thick is made up of Zn ferrite).Therefore, can determine compared with the clearance layer thick with the 20 μ m that made by Zn ferrite, to there is almost similar initial inductance value even if there is the clearance layer 130 of 10 μ m thickness.Therefore, can there is minimal thickness according to the clearance layer 130 of the inductor 100 of exemplary embodiment of the invention and show performance similar compared with general clearance layer simultaneously.
Fig. 5 is the curve chart illustrating with the inductance value of the DC-bias variations by causing according to the varied in thickness of the inductor clearance layer of exemplary embodiment of the invention.With reference to Fig. 5, to manufacture according to the inductor of exemplary embodiment of the invention, the thickness that makes clearance layer 130 is 5 μ m, 7 μ m and 10 μ m.Subsequently, calculate inductor current change curve 12,14 and 16, then compare with the inductance change curve 24 of inductor (clearance layer that wherein, 20 μ m are thick is made up of Zn ferrite).Therefore, can determine, the current value of the current value (Isat value) in the time that DC-bias variations rate is-30% during to the thickness when clearance layer 130 with 5 μ m is similar.Therefore, compared with common inductor, can show similar function according to the clearance layer 130 of the inductor 100 of exemplary embodiment of the invention, and compared with common inductor, even have common inductor thickness approximately 50% or less, also can show equate or higher initial inductance performance.
Fig. 6 illustrates with according to the curve chart of the DC-bias voltage of the variations in temperature of the inductor of exemplary embodiment of the invention (TCL-bias voltage) performance.With reference to Fig. 6, can determine, according in the clearance layer 130 of the inductor 100 of exemplary embodiment of the invention, inductance change vary with temperature very little.
As mentioned above, for according to the inductor 100 of exemplary embodiment of the invention, be arranged in apparatus main body 110 and can there is using the clearance layer 130 in blocking-up magnetic field the structure being formed by zirconia (as the material for high temperature sintering) and bismuth oxide (as shrinkage controlling agent).In this case, in sintering process, between apparatus main body and clearance layer, there is hardly material diffusion, thereby, because zirconia is complete nonmagnetic substance, under same thickness condition, and there is ZnCuFeO ferrite or Zn-Ti class dielectric medium as compared with the clearance layer of key component, clearance layer of the present invention can show better magnetic field barrier effect.Therefore, for inductor according to the present invention, clearance layer is made up of the composite material of zirconia and bismuth oxide, thereby prevents the diffusion phenomena of clearance layer during manufacture process, makes it possible to improve DC-bias performance and bias voltage-TCL performance.In addition, for inductor according to the present invention, the Thickness Ratio of clearance layer uses ZnCuFeO ferrite or Zn-Ti class dielectric medium more to reduce as the clearance layer of key component, thereby make the inductor can microminiaturization, relatively increase thus the thickness of apparatus main body, make it possible to increase the inductance of inductor.
[embodiment]
Based on the content of whole mixture, under the each ratio (mol%) shown in following table 1, there is the zirconia (ZrO of 100nm or less average grain diameter by mixing
2) powder and bismuth oxide (Bi
2o
3) prepare each mixture.At this, except zirconia (ZrO
2) powder and bismuth oxide (Bi
2o
3) outside, can selectivity add a small amount of apparatus main body component as zinc (Zn), copper (Cu) etc., or liquid state sintered additive, but because its amount is relatively little, the total content of therefore supposing Zirconium oxide powder and bismuth oxide is 100mol%.
Mixture is prepared into slurry type, and slurry is dried to 12 hours at the temperature of 120 DEG C, then grind, thereby obtain powder.Based on powder, with the content of about 10wt%, PVA adhesive (5% diluent liquid) is added in powder.The mixture of 2.5g is fed in cylindrical core (toroidal core) mould with 20mm external diameter and 14mm internal diameter, then extruding molded approximately 1 minute under the pressure of 2 tons, and under the sintering temperature of approximately 900 DEG C sintering 2 hours.
Measure the size of the cylindrical core of manufacturing thus, thus shrinkage from mold dimensions.Enamel covered wire (enamel copper line) is wound around to 10 circles thereon, then under 1MHz inductance measuring L value to calculate magnetic permeability.Result is presented in following table 1 and Fig. 3.
In addition, quantitative analysis the composition of the clearance layer made by sample 2 and 7, be then listed in table 2.
[table 1]
[table 2]
Can determine from above-mentioned table 1 magnetic permeability value that sample 1 to 7 all has lower than 4, thereby there is nonmagnetic substance.Therefore, can determine that all samples 1 to 7 all can be fully with the material that acts on clearance layer.
The content that can determine Bi in the clearance layer by using sample 2 and 7 manufactures from above-mentioned table 2 is respectively 0.1wt% and 1.3wt%.Therefore, can determine, when by Bi in the composition for the manufacture of clearance layer
2o
3content while being controlled at about 1.25mol% to 5.00mol%, in clearance layer, the content of Bi is about 0.1wt% to 1.3wt%.But, as shown in Figure 2, even when adding as the Bi of shrinkage controlling agent using content more than about 1.00mol%
2o
3time, being improved the effect of shrinkage, and can significantly reducing the content of Bi in final clearance layer, this depends on the condition of inductor manufacturing process.Can expect, consider Bi
2o
3minimum content and the condition of inductor manufacturing process, in clearance layer, the minimum content of Bi is reduced to 0.01wt%.
Meanwhile, when based on ZrO
2content with 1.25mol% adds Bi
2o
3time, shrinkage is 2.50% or lower.That is, can determine, due to the Bi as shrinkage controlling agent for every kind of sample
2o
3content relatively very little, sample 1 and 2 cannot fully show the effect of improving shrinkage.But, when based on ZrO
2add Bi with content more than 2.00mol%
2o
3time, shrinkage is 10.00% or higher., can determine that, in sample 1 to 7, shrinkage is increased to 10% or higher.Particularly, can determine, as shown in Figure 3, from working as Bi
2o
3addition be time point more than 1.25mol%, shrinkage sharply increases.But, can determine, adding Bi with the content that exceedes 4mol% or 5mol%
2o
3situation under, shrinkage does not further increase approximately 18.50%., work as Bi
2o
3content while being about 4mol% to 5mol%, shrinkage has saturation value.
Can determine from the above results data, for the manufacture of thering is the zirconia for high temperature sintering material as key component according to the composition of the inductor clearance layer of exemplary embodiment of the invention, it is the material insulating completely, and as the Bi controlling as shrinkage controlling agent
2o
3when content, can fully play inductor clearance layer by the clearance layer that uses said composition manufacture.Particularly, can determine, consider and use the fact that ZnCuFeO ferrite or Zn-Ti class dielectric medium are approximately 10% to 20% as the sintering shrinkage of the clearance layer of key component, as zirconia and Bi
2o
3content while being controlled at 98.75:1:25 to 95.00:5.00, compared with current material for clearance layer, show similar or better effect.
As above illustrated, according to inductor of the present invention, clearance layer is made up of the composite material of zirconia and bismuth oxide, thereby prevents the diffusion phenomena of clearance layer during manufacture process, makes to improve DC-bias performance and bias voltage-TCL performance of inductor.
Further, according to inductor of the present invention, the thickness of allowable clearance layer has than using ZnCuFeO ferrite or Zn-Ti class dielectric medium as the less thickness of the clearance layer of key component, thereby make the inductor can microminiaturization, relatively increase thus the thickness of apparatus main body, make it possible to improve the inductance of inductor.
Further, compared with the clearance layer of being made as key component by ZnCuFeO ferrite or Zn-Ti class dielectric medium, composition for the manufacture of inductor clearance layer of the present invention forms by the zirconia as key component with as the bismuth oxide of shrinkage controlling agent, thereby prevent the diffusion phenomena of clearance layer, make it possible to improve DC-bias performance and bias voltage-TCL performance of inductor.
Further, make the clearance layer can be thinner than the clearance layer of being made as key component by ZnCuFeO ferrite or Zn-Ti class dielectric medium for the manufacture of the composition of inductor clearance layer of the present invention, make the inductor can microminiaturization and can improve the inductance of inductor.
In conjunction with being considered to be actual illustrative embodiments at present, the present invention is described.Although described exemplary embodiment of the present invention, the present invention can also be used for various other combinations, amendment and environment.In other words, the present invention can be within the scope of the disclosed design concept of the present invention of specification, be equal in the scope of the present disclosure and/or the field that the present invention relates in technology or the scope of knowledge in change or amendment.Provide above-mentioned exemplary embodiment to implement best mode of the present invention to explain.Therefore, in using such as other inventions of the present invention, can implement them in other known modes of the field that the invention relates to, and can be with concrete application and the needed modified in various forms of use of the present invention.Therefore, be understood that and the invention is not restricted to disclosed execution mode.Be understood that other execution modes are also included within the spirit and scope of claims.
Claims (15)
1. an inductor, comprising:
Apparatus main body; And
Be arranged on described apparatus main body inner and there is the clearance layer of metal oxide and shrinkage controlling agent.
2. inductor according to claim 1, wherein, described metal oxide comprises zirconium dioxide (ZrO
2), aluminium oxide (Al
2o
3) and titanium dioxide (TiO
2) at least one.
3. inductor according to claim 1, wherein, described shrinkage controlling agent comprises bismuth oxide (Bi
2o
3), at least one in Bi-Li compounds oxide and Bi-B compounds oxide.
4. inductor according to claim 1, wherein, the clearance layer of described inductor has 4 or lower magnetic permeability.
5. inductor according to claim 1, wherein, described metal oxide is the zirconia with 0.25 μ m or less average grain diameter.
6. inductor according to claim 1, wherein, described clearance layer has 20 μ m or less thickness.
7. inductor according to claim 1, wherein, described clearance layer has 10.00% or higher shrinkage.
8. inductor according to claim 1, wherein, described shrinkage controlling agent is bismuth oxide, in described clearance layer, the content of bismuth is lower than 1.3wt%.
9. inductor according to claim 1, wherein, described apparatus main body forms by multiple, and described each free NiZnCu ferrite class magnetic material made.
10. for the manufacture of a composition that is arranged on the clearance layer in inductor arrangement main body, described composition comprises metal oxide and shrinkage controlling agent.
11. compositions according to claim 10, wherein, described metal oxide is zirconium dioxide (ZrO
2), aluminium oxide (Al
2o
3) and titanium dioxide (TiO
2) at least one, and
Wherein, described shrinkage controlling agent comprises bismuth oxide (Bi
2o
3), at least one in Bi-Li compounds oxide and Bi-B compounds oxide.
12. compositions according to claim 10, wherein, described metal oxide is zirconium dioxide (ZrO
2), and
Wherein, described shrinkage controlling agent is bismuth oxide (Bi
2o
3), the content ratio of described zirconia and described bismuth oxide is 98.75:1.25 to 95.00:5.00.
13. compositions according to claim 10, wherein, based on zirconia, add described shrinkage controlling agent with content more than 1.00mol%.
14. compositions according to claim 10, wherein, based on zirconia, to add described shrinkage controlling agent lower than the content of 5.00mol%.
15. compositions according to claim 10, wherein, described zirconia comprises the zirconium dioxide with 0.25 μ m or less average grain diameter.
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| KR10-2012-0155037 | 2012-12-27 | ||
| KR1020120155037A KR101983135B1 (en) | 2012-12-27 | 2012-12-27 | Inductor and composition for manufacturing the gap layer of the same |
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| CN103903831B CN103903831B (en) | 2018-06-29 |
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| JP6738635B2 (en) * | 2016-03-31 | 2020-08-12 | 太陽誘電株式会社 | Coil parts |
| KR101843260B1 (en) | 2016-05-30 | 2018-03-28 | 삼성전기주식회사 | Chip inductor and manufacturing method of the same |
| CN116825516A (en) * | 2022-03-21 | 2023-09-29 | 斯特华(佛山)磁材有限公司 | Multilayer inductor structure |
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2012
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| Publication number | Publication date |
|---|---|
| KR101983135B1 (en) | 2019-05-28 |
| KR20140084978A (en) | 2014-07-07 |
| CN103903831B (en) | 2018-06-29 |
| JP2014131012A (en) | 2014-07-10 |
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