CN103896262A - Method for improving mobility of graphene by nondestructive doping - Google Patents
Method for improving mobility of graphene by nondestructive doping Download PDFInfo
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- CN103896262A CN103896262A CN201410075061.4A CN201410075061A CN103896262A CN 103896262 A CN103896262 A CN 103896262A CN 201410075061 A CN201410075061 A CN 201410075061A CN 103896262 A CN103896262 A CN 103896262A
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- graphene
- hydrazine hydrate
- doping
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- hydrate solution
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Abstract
The invention relates to a method for improving the mobility of graphene by a nondestructive doping. The method comprises the steps of preparing a hydrazine hydrate solution, and then placing graphene samples in the hydrazine hydrate solution for one minute-12 hours, taking the graphene samples out and drying to obtain a nondestructively doped graphene. The method disclosed by the invention is high in repeatability, is simple and feasible and can be used for modifying graphene films on a large scale and further has no damage to the graphene films; the mobility of graphene films is qualitatively improved by changing the concentration of the hydrazine hydrate solution and the contact time of the hydrazine hydrate solution with a target substrate. The method disclosed by the invention overcomes various shortcomings of the prior art and has a high degree of industrial utilization value.
Description
Technical field
The invention belongs to doped graphene field, particularly a kind of method that improves Graphene mobility by harmless doping.
Background technology
In graphene film materials theory, possess a lot of superior performance, for example high electron mobility, high current density, high mechanical strength etc.Just because of these characteristics, it is acknowledged as manufactures transparent conductive film, high-frequency transistor, hydrogen storage battery, and even the ideal material of unicircuit, has wide market application foreground.But all there are a lot of defects in the Graphene in fact obtaining by different methods, at present, the graphene film of preparation can be introduced defect due to a variety of causes in process of growth or follow-up transfer process, these factors have reduced the electrical properties of Graphene to a great extent, need to make up by adulterating method.
The people such as Ha (Tae-Jun Ha, Jongho Lee, Sk.Fahad Chowdhury, Deji Akinwande, Peter J.Rossky, and Ananth Dodabalapur, ACS Appl.Mater.Interfaces2013,5,16-20) make mobility increase to 2 times before doping by doped fluor-containing polymkeric substance, but Raman test shows that the sample D peak after doping obviously strengthens, and illustrates that the doping of fluoropolymer has destroyed the internal structure of Graphene, has increased the degree of disorder of inner carbon atom arrangement.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of method that improves Graphene mobility by harmless doping, and the method repeatability is high, simple, can grapheme modified film in enormous quantities, and graphene film is not had to destruction.
A kind of method that improves Graphene mobility by harmless doping of the present invention, comprising:
Preparation hydrazine hydrate solution, then puts into hydrazine hydrate solution 1min-12h by Graphene sample, dries up the Graphene sample that obtains having modified after taking-up.
Described hydrazine hydrate solution is the mixture of hydrazine hydrate and water, and wherein the volume ratio of hydrazine hydrate and water is 1:10000-1:1.
Described Graphene sample is to transfer to the Graphene sample on isolator or semiconductor material after being grown in the Graphene sample on isolator or being grown in conductor material.
Isolator or semiconductor material are the one in silicon carbide, silicon/silicon dioxide, sapphire.
The described Graphene sample (needing in Graphene sample to realize and the membrane-bound semi-conductor of Graphene or insulating material by transfer step) transferred to after conductor material on isolator or semiconductor material of being grown in can be first put into hydrazine hydrate solution by isolator or semiconductor material and is soaked, then graphene film is transferred on isolator or semiconductor material, can be reached identical doping effect.
A kind of method that improves Graphene mobility by harmless doping of the present invention, processing is reduced in the oxidation that the reductibility of utilizing hydrazine hydrate causes in air the graphene film long-term exposure of chemical Vapor deposition process growth, remove the oxidizing substance that Graphene surface forms, this being entrained under the prerequisite of not destroying graphene film internal structure, can significantly improve 3 times of left and right of mobility of Graphene.
beneficial effect
(1) repeatability of the present invention is high, simple, can grapheme modified film in enormous quantities, and graphene film is not had to destruction;
(2) the present invention can by change hydrazine hydrate solution concentration and with target substrate duration of contact qualitative raising graphene film mobility;
(3) the present invention has overcome various shortcoming of the prior art and tool high industrial utilization.
Brief description of the drawings
Fig. 1 is process flow sheet of the present invention;
Fig. 2 is the graphite Raman spectrogram before harmless doping and after doping.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment are only not used in and limit the scope of the invention for the present invention is described.In addition should be understood that those skilled in the art can make various changes or modifications the present invention after having read the content of the present invention's instruction, these equivalent form of values fall within the application's appended claims limited range equally.
Embodiment 1
Preparation hydrazine hydrate solution, then Graphene sample (growth temperature is 950 DEG C) is put into hydrazine hydrate solution 15min, after taking-up, dry up, the Graphene sample (sample 1) that obtains having modified, wherein in hydrazine hydrate solution, the volume ratio of hydrazine hydrate and water is 1:70.
Embodiment 2
Preparation hydrazine hydrate solution, then Graphene sample (growth temperature is 1000 DEG C) is put into hydrazine hydrate solution 15min, after taking-up, dry up, the Graphene sample (sample 2) that obtains having modified, wherein in hydrazine hydrate solution, the volume ratio of hydrazine hydrate and water is 1:70.
Embodiment 3
Preparation hydrazine hydrate solution, then Graphene sample (growth temperature is 1050 DEG C) is put into hydrazine hydrate solution 15min, after taking-up, dry up, the Graphene sample (sample 3) that obtains having modified, wherein in hydrazine hydrate solution, the volume ratio of hydrazine hydrate and water is 1:70.
Fig. 2 is shown as the Raman spectrogram of doping front and back graphene film in embodiment 1, by comparing the intensity at D peak, finds that doping does not cause the enhancing at D peak, i.e. doping does not destroy Graphene internal structure, does not introduce defect.
By measuring the electrical properties of the graphene film obtaining under different growth conditionss, the mobility of finding doping rear film significantly improves, and the sample doping effect that initially mobility is lower is better, as shown in table 1, after doping, the doping of the mobility ratio of Graphene is front improves approximately 3 times.
Table 1
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all can, under spirit of the present invention and category, modify or change above-described embodiment.Therefore, such as in affiliated technical field, have and conventionally know that the knowledgeable, not departing from all equivalence modifications that complete under disclosed spirit and technological thought or changing, must be contained by claim of the present invention.
Claims (5)
1. a method that improves Graphene mobility by harmless doping, comprising:
Preparation hydrazine hydrate solution, then puts into hydrazine hydrate solution 1min-12h by Graphene sample, dries up the Graphene sample that obtains having modified after taking-up.
2. a kind of method that improves Graphene mobility by harmless doping according to claim 1, is characterized in that: described hydrazine hydrate solution is the mixture of hydrazine hydrate and water, and wherein the volume ratio of hydrazine hydrate and water is 1:10000-1:1.
3. a kind of method that improves Graphene mobility by harmless doping according to claim 1, is characterized in that: described Graphene sample is to transfer to the Graphene sample on isolator or semiconductor material after being grown in the Graphene sample on isolator or being grown in conductor material.
4. a kind of method that improves Graphene mobility by harmless doping according to claim 3, is characterized in that: isolator or semiconductor material are the one in silicon carbide, silicon/silicon dioxide, sapphire.
5. a kind of method that improves Graphene mobility by harmless doping according to claim 3, it is characterized in that: described in be grown in the Graphene sample transferred to after conductor material on isolator or semiconductor material and soak for isolator or semiconductor material are put into hydrazine hydrate solution, then graphene film is transferred on isolator or semiconductor material.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410075061.4A CN103896262A (en) | 2014-03-03 | 2014-03-03 | Method for improving mobility of graphene by nondestructive doping |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102020270A (en) * | 2009-09-09 | 2011-04-20 | 中国科学院金属研究所 | Macro-preparation for big size graphene |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102020270A (en) * | 2009-09-09 | 2011-04-20 | 中国科学院金属研究所 | Macro-preparation for big size graphene |
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Application publication date: 20140702 |