CN103887361A - Precious-metal doped TiO2/TiO2 homogeneous-structure ultraviolet detector and preparation method - Google Patents

Precious-metal doped TiO2/TiO2 homogeneous-structure ultraviolet detector and preparation method Download PDF

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CN103887361A
CN103887361A CN201410151399.3A CN201410151399A CN103887361A CN 103887361 A CN103887361 A CN 103887361A CN 201410151399 A CN201410151399 A CN 201410151399A CN 103887361 A CN103887361 A CN 103887361A
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precious metal
homostyructure
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metal doping
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CN103887361B (en
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阮圣平
刘国华
高强
刘彩霞
周敬然
温善鹏
董玮
郭文滨
张歆东
沈亮
张敏
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Jilin University
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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Abstract

The invention relates to a precious-metal doped TiO2/TiO2 homogeneous-structure ultraviolet detector and a preparation method and belongs to the technical field of semiconductor photoelectric devices. The detector comprises a quartz substrate, a precious-metal doped TiO2 film layer, a pure TiO2 film layer and a metal interdigital electrode. The detector is characterized by being provided with a homogeneous structure formed by the precious-metal doped TiO2 film layer and the pure TiO2 film layer. On one side, by the doping of precious metal, the substrate material has a low Fermi level, and the metal electrode and substrate material contacting barrier height is reduced; on the other side, the built-in electric field direction of the homogeneous structure formed by the precious-metal doped TiO2 film layer and the pure TiO2 film layer is opposite to the built-in electric field direction of metal-semiconductor contact of the detector, and the barrier height is also reduced. The photo-response characteristic of the ultraviolet detector is effectively improved from the material doping modification and the device structure.

Description

There is the TiO of precious metal doping 2/ TiO 2homostyructure ultraviolet detector and preparation method thereof
Technical field
The invention belongs to semiconductor photoelectric device technical field, be specifically related to a kind of TiO with precious metal doping 2/ TiO 2ultraviolet light detector of homostyructure and preparation method thereof.
Background technology
Ultraviolet detection technology is as the important branch of Modern Transducer Technology, be that a kind of laser that continues, infrared light and visible ray are surveyed another gate pole tool practicality in addition and the emerging Detection Techniques of using value, show potential prospect and using value in lightwave communication, imaging technique, environmental monitoring, combustion enginnering and following field such as energy storage and optoelectronic IC.
Along with the development of ultraviolet detection technology, the development of ultraviolet detector becomes the focus of concern.Military, civilian all in the urgent need to the ultraviolet detector of high reliability, high stability.The ultraviolet detector of pursuing high combination property seems particularly important.Researchers are devoted to improve by the whole bag of tricks the combination property of detector always in recent years, from basis material, the ultraviolet detector development that tradition homogenous material is matrix is comparatively ripe, novelty is little, and the exploration of some advanced composite material (ACM)s cannot obtain again high performance ultraviolet detector.Broad stopband oxide semiconductor has the characteristic of the brilliances such as energy gap is large, electron drift velocity is high, dielectric constant is little and potential technical advantage, shows huge development prospect in ultraviolet detection field.TiO 2owing to thering are excellent photoelectric properties, stable physicochemical characteristics and cheap price etc. receives much concern.But because the aspects such as material preparation, device architecture still exist defect, the photoelectric properties of ultraviolet detector are restricted, and device still awaits further raising in the parameter such as optical responsivity and response time.Therefore in order to prepare the TiO with higher response characteristics to light 2ultraviolet detector, by basis material TiO 2carry out doping vario-property or improve the methods such as device architecture and improve detector performance and become the hot issue of Recent study.
Noble metal is owing to having the work function higher than semiconductor and can introduce the features such as peculiar impurity energy level in forbidden band, can affect the transmission of semiconductor extinction characteristic, charge carrier and the barrier height of gold half contact etc., in semiconductor doping modification, have a extensive future.
Summary of the invention
The object of the present invention is to provide a kind of TiO with precious metal doping 2/ TiO 2ultraviolet light detector of homostyructure and preparation method thereof.The double-deck homostyructure that detector has has finally well improved the response characteristics to light of device.
Ultraviolet light detector of the present invention, is characterized in that: the TiO being adulterated by substrate (quartz substrate, Sapphire Substrate, silicon substrate etc.), noble metal (Pt, Au, Pd, Rh etc.) successively 2thin layer (molar concentration of precious metal doping is 0.008～0.04mol/L), pure TiO 2thin layer, metal interdigital electrode (metal is Au, Pt etc.) composition, the TiO of precious metal doping 2the thickness of thin layer is 150～210nm, pure TiO 2thin layer thickness is 30～90nm, and the thickness of metal interdigital electrode is 50～150nm, and electrode width is 5～60 μ m, and electrode spacing is 5～60 μ m.
The present invention adopts sol-gal process on substrate, to prepare successively the TiO of precious metal doping 2thin layer and pure TiO 2thin layer, then prepares metal interdigital electrode in the above.The device preparing like this has the TiO of precious metal doping 2thin layer and pure TiO 2the homostyructure that thin layer forms.On the one hand with pure TiO 2thin layer is compared, the TiO of precious metal doping 2thin layer is enough thick, and it,, as the main basis material of device, has lower Fermi level, is equivalent to TiO 2carry out acceptor doping, reduced the barrier height that metal electrode contacts with basis material; On the other hand, the thin layer of precious metal doping can be regarded as to one deck N-type lightly-doped layer (N-), it and TiO 2the internal electric field direction of the homostyructure (N--N) that layer forms and the internal electric field opposite direction that device itself gold half contacts, equally also reduced barrier height.The response characteristics to light of ultraviolet detector has effectively been improved in the final doping vario-property from material and device architecture two aspects.
A kind of TiO with precious metal doping of the present invention 2/ TiO 2ultraviolet light detector of homostyructure and preparation method thereof, its step is as follows:
[1] TiO 2the preparation of colloidal sol
Under room temperature, in the 5～10mL butyl titanate that 5～10mL acetic acid, 5～10mL acetylacetone,2,4-pentanedione, 5～10mL deionized water is splashed into continuous stirring successively and mix and the mixed liquor of 80～100mL ethanol, continue stirring until obtain the orange red colloidal sol of homogeneous transparent, ageing obtained TiO after 24～48 hours 2colloidal sol;
[2] precious metal doping TiO 2the preparation of colloidal sol
Get salt (chloroplatinic acid, the gold chloride of the noble metal of 0.1～0.3g, palladium bichloride, radium chloride etc.), added in the mixed liquor of 4mL～8mL water and 4～8mL ethanol, be stirred to abundant dissolving, the mixed liquor after dissolving added to the TiO of the 5～15mL taking out from step [1] 2in colloidal sol, 70～90 ℃ of heating water bath stirring 2～4h obtain the TiO of precious metal doping 2colloidal sol;
[3] cleaning of substrate
Substrate is put into acetone, ethanol and deionized water successively, and ultrasonic 10～15 minutes respectively, ultrasonic power was 80～100W, then flows down and dries up at nitrogen;
[4] precious metal doping TiO 2the preparation of film
The TiO of 5～7 layers of precious metal doping of spin coating on substrate after cleaning 2colloidal sol, the technique of every layer is: rotating speed 2000～3000rpm, even glue time 10～20s dries 5～7 minutes after even glue under 110～130 ℃ of conditions, then in air cooling 2～4 minutes; Finally by the substrate of good this colloidal sol of spin coating sintering 1.5～3 hours under 550～650 ℃ of conditions, thereby on substrate, form the TiO of precious metal doping 2film, thickness is 150～210nm;
[5] preparation of homostyructure
At the TiO of precious metal doping 21～3 layer of TiO of spin coating on thin layer 2colloidal sol, the technique of every layer is: rotating speed 2000～3000rpm, even glue time 10～20s dries 5～7 minutes after even glue under 110～130 ℃ of conditions, then in air cooling 2～4 minutes; Finally by good spin coating TiO 2the substrate of colloidal sol sintering 1.5～3 hours under 550～650 ℃ of conditions, thus the TiO by precious metal doping on substrate, obtained 2with pure TiO 2the homostyructure of bilayer film composition;
[6] preparation of metal interdigital electrode
At the thick BP212 eurymeric photoresist of first spin coating one deck 1～3 μ m in homostyructure surface preparing, be placed on hot plate under 70 ℃～90 ℃ conditions front baking 10～20 minutes; Then on mask aligner, to refer to that the mask plate of electrode pattern complementary structure and the photoresist layer of spin coating adjust close contact behind position with inserting, expose and develop 30～50 seconds after 50～60 seconds, with drying up after deionized water rinsing, then be placed on hot plate under 110 ℃～130 ℃ conditions post bake and after 15～25 minutes, on homostyructure layer, obtain needed photoresist and insert and refer to electrode pattern; Then adopt radiofrequency magnetron sputtering technology to prepare in the above electrode, sputtering chamber is evacuated to 2.0 × 10 -3～8.0 × 10 -3logical argon gas after Pa, sputtering pressure is 0.5～1.4Pa, and sputtering power is 60～110W, and sputtering time is 3～8 minutes; Finally with acetone by photoresist and metal is above ultrasonic etches away, ultrasonic power is 50～70W, the interdigital electrode thickness obtaining is 50～150nm, electrode width is 5～60 μ m, electrode spacing is 5～60 μ m; Finally prepare the TiO with precious metal doping by above step 2/ TiO 2the ultraviolet light detector of homostyructure.
Accompanying drawing explanation
Fig. 1: the structural representation of device of the present invention;
Fig. 2: TiO 2the X ray diffracting spectrum of film (embodiment 1);
Fig. 3: Pt/TiO 2the X ray diffracting spectrum of film (embodiment 2);
Fig. 4: under 300nm UV-irradiation, pure TiO 2ultraviolet detector (embodiment 1), Pt/TiO 2ultraviolet detector (embodiment 2) and there is the photoelectric current comparison diagram of the ultraviolet detector (embodiment 3) of homostyructure;
Fig. 5: pure TiO 2the response time figure of ultraviolet detector (embodiment 1);
Fig. 6: Pt/TiO 2the response time figure of ultraviolet detector (embodiment 2);
Fig. 7: the response time figure with the ultraviolet detector (embodiment 3) of homostyructure;
As shown in Figure 1, device is by substrate 1, Pt/TiO 2 thin layer 2, pure TiO 2 thin layer 3, metal interdigital electrode 4 form, and 300nm ultraviolet source 5 is radiated on photosensitive layer 2 and 3 and produces photo-generated carrier through substrate 1, under applying bias condition, are collected by metal interdigital electrode, produce photoelectric current, and photosensitive layer is by the Pt/TiO with homostyructure 2thin layer and TiO 2thin layer composition, the internal electric field opposite direction that its internal electric field direction contacts with semiconductor with metal electrode, makes potential barrier reduction, final optimization pass the response characteristics to light of device.
Fig. 2 is TiO 2the X ray diffracting spectrum of film, the position of all diffraction maximums and Detitanium-ore-type TiO 2(JCPDS No.21-1272) is corresponding for standard powder diffraction card, and the TiO of preparation is described 2there is the good crystalline structure of Detitanium-ore-type.
As shown in Figure 3, Pt/TiO 2in the X ray diffracting spectrum of film, occurred the diffraction maximum of Pt simple substance, illustrated that this part Pt is zeroth order, it enters into TiO in the mode of interstitial atom 2in lattice; In addition compared with standard powder diffraction card, TiO 2having there is slight shift left in the position of diffraction maximum own, illustrates that this part Pt has substituted TiO 2ti atom in lattice, is+4 valencys, according to bragg's formula: 2dsin θ=n λ, for certain n value, n λ is constant, and the diffraction angle of crystal interplanar distance d and X ray is inversely proportional to, and Pt atom enters TiO 2in lattice, by large its interplanar distance support, cause the angle of diffraction to diminish, there is skew in diffraction maximum position therefore.
As shown in Figure 4, curve 1,2,3 is respectively pure TiO 2ultraviolet detector, Pt/TiO 2ultraviolet detector and the ultraviolet detector with the homostyructure I-V curve chart under 300nm UV-irradiation; Under 5V bias voltage, photoelectric current is respectively 2.866 μ A, 35.711 μ A and 191.770 μ A.Pt/TiO 2the reason that ultraviolet detector photoelectric current increases is due at TiO 2in mix precious metals pt, basis material has lower Fermi level, has reduced the barrier height that metal electrode contacts with basis material; It is because Pt/TiO that the ultraviolet detector with homostyructure has maximum photoelectric current 2layer and TiO 2the internal electric field direction of the homostyructure (N--N) that layer forms and the internal electric field opposite direction that device itself gold half contacts, reduced barrier height to a greater degree.
Fig. 5 is pure TiO 2the response time curve of ultraviolet detector, as shown in the figure, the rise time is 2.284s, be 1.721s fall time.
Fig. 6 is Pt/TiO 2ultraviolet detector response time curve, as shown in the figure, the rise time foreshortens to 1.517s, and be 1.672s fall time.
Fig. 7 is the ultraviolet detector response time curve with homostyructure, and as shown in the figure, the rise time is only 861.6ms, and be 1.788s fall time.
Embodiment
Embodiment 1:
[1] under room temperature, in the 8mL butyl titanate that 8mL acetic acid, 8mL acetylacetone,2,4-pentanedione, 8mL deionized water is splashed into continuous stirring successively and mix and the mixed liquor of 90mL ethanol, continue stirring until obtain the orange red colloidal sol of homogeneous transparent, ageing obtained TiO after 36 hours 2colloidal sol;
[2] quartz substrate is put into acetone, ethanol and deionized water successively, ultrasonic 12 minutes respectively, ultrasonic power was 90W, then flows down and dries up at nitrogen;
[3] in the quartz substrate after cleaning, use 6 layers of TiO of sol evenning machine spin coating 2colloidal sol, the rotating speed of every layer is 2500rpm, and the even glue time is 15s, dries 6 minutes in air cooling 3 minutes after even glue under 120 ℃ of conditions; Finally by good spin coating TiO 2the substrate slice of colloidal sol is placed in Muffle furnace, and under 600 ℃ of conditions, sintering 2 hours, forms Detitanium-ore-type TiO 2film, thickness is about 180nm;
[4] TiO preparing 2the thick BP212 eurymeric photoresist of the first spin coating one deck 1.5 μ m of film surface, is placed on hot plate under 80 ℃ of conditions front baking 15 minutes; Then on mask aligner, to refer to that the mask plate of electrode pattern complementary structure and the photoresist layer of spin coating adjust close contact behind position with inserting, expose and develop 40 seconds after 55 seconds, with drying up after deionized water rinsing, be placed on hot plate under 120 ℃ of conditions post bake and after 20 minutes, on film, obtain needed photoresist and insert and refer to electrode pattern; Then adopt radiofrequency magnetron sputtering technology to prepare in the above Au electrode, sputtering chamber is evacuated to 3.0 × 10 -3logical argon gas after Pa, sputtering pressure is 1.2Pa, and sputtering power is 100W, and sputtering time is 6 minutes; Finally with acetone by photoresist and metal is above ultrasonic etches away, ultrasonic power is 60W, the interdigital electrode thickness obtaining is 120nm, electrode width is 20 μ m, electrode spacing is 20 μ m; Prepare pure TiO by above step 2ultraviolet light detector.Photoelectric current under 5V bias voltage 300nm UV-irradiation is 2.866 μ A; Rise time is 2.284s, and be 1.721s fall time.
Embodiment 2:
[1] under room temperature, in the 8mL butyl titanate that 8mL acetic acid, 8mL acetylacetone,2,4-pentanedione, 8mL deionized water is splashed into continuous stirring successively and mix and the mixed liquor of 90mL ethanol, continue stirring until obtain the orange red colloidal sol of homogeneous transparent, ageing obtained TiO after 36 hours 2colloidal sol;
[2] get the chloroplatinic acid (H of 0.2g 2ptCl 66H 2o), added in the mixed liquor of 5mL water and 5mL ethanol, be stirred to abundant dissolving, the mixed liquor after dissolving is added to the TiO of the 10mL taking out from step [1] 2in colloidal sol, 80 ℃ of heating water baths stir 3h and obtain Pt/TiO 2colloidal sol;
[3] quartz substrate is put into acetone, ethanol and deionized water successively, ultrasonic 12 minutes respectively, ultrasonic power was 90W, then flows down and dries up at nitrogen;
[4] in the quartz substrate after cleaning, use 6 layers of Pt/TiO of sol evenning machine spin coating 2colloidal sol, the rotating speed of every layer is 2500rpm, and the even glue time is 15s, dries 6 minutes in air cooling 3 minutes after even glue under 120 ℃ of conditions; Finally by good spin coating Pt/TiO 2the substrate slice of colloidal sol is placed in Muffle furnace, and under 600 ℃ of conditions, sintering 2 hours, forms Pt/TiO 2film, thickness is about 180nm;
[5] Pt/TiO preparing 2the thick BP212 eurymeric photoresist of the first spin coating one deck 1.5 μ m of film surface, is placed on hot plate under 80 ℃ of conditions front baking 15 minutes; Then on mask aligner, to refer to that the mask plate of electrode pattern complementary structure and the photoresist layer of spin coating adjust close contact behind position with inserting, expose and develop 40 seconds after 55 seconds, with drying up after deionized water rinsing, be placed on hot plate under 120 ℃ of conditions post bake and after 20 minutes, on film, obtain needed photoresist and insert and refer to electrode pattern; Then adopt radiofrequency magnetron sputtering technology to prepare in the above Au electrode, sputtering chamber is evacuated to 3.0 × 10 -3logical argon gas after Pa, sputtering pressure is 1.2Pa, and sputtering power is 100W, and sputtering time is 6 minutes; Finally with acetone by photoresist and metal is above ultrasonic etches away, ultrasonic power is 60W, the interdigital electrode thickness obtaining is 120nm, electrode width is 20 μ m, electrode spacing is 20 μ m; Prepare Pt/TiO by above step 2ultraviolet light detector.With pure TiO 2ultraviolet detector is compared photoelectric current and has been improved 12.5 times, and the rise time has shortened 1.5 times.
Embodiment 3:
[1] under room temperature, in the 8mL butyl titanate that 8mL acetic acid, 8mL acetylacetone,2,4-pentanedione, 8mL deionized water is splashed into continuous stirring successively and mix and the mixed liquor of 90mL ethanol, continue stirring until obtain the orange red colloidal sol of homogeneous transparent, ageing obtained TiO after 36 hours 2colloidal sol;
[2] get the chloroplatinic acid (H of 0.2g 2ptCl 66H 2o), added in the mixed liquor of 5mL water and 5mL ethanol, be stirred to abundant dissolving, the mixed liquor after dissolving is added to the TiO of the 10mL taking out from step [1] 2in colloidal sol, 80 ℃ of heating water baths stir 3h and obtain Pt/TiO 2colloidal sol;
[3] quartz substrate is put into acetone, ethanol and deionized water successively, ultrasonic 12 minutes respectively, ultrasonic power was 90W, then flows down and dries up at nitrogen;
[4] in the quartz substrate after cleaning, use 5 layers of Pt/TiO of sol evenning machine spin coating 2colloidal sol, the rotating speed of every layer is 2500rpm, and the even glue time is 15s, dries 6 minutes in air cooling 3 minutes after even glue under 120 ℃ of conditions; Finally by good spin coating Pt/TiO 2the substrate slice of colloidal sol is placed in Muffle furnace, and under 600 ℃ of conditions, sintering 2 hours, forms Pt/TiO 2film, thickness is about 150nm;
[5] at Pt/TiO 2on thin layer, again prepare pure TiO 2thin layer (1 layer of TiO of spin coating 2colloidal sol, rotating speed is 2500rpm, the even glue time is 15s, dries 6 minutes in air cooling 3 minutes under 120 ℃ of conditions; Under 600 ℃ of conditions in Muffle furnace sintering 2 hours, the TiO preparing 2film thickness is about 30nm), on substrate, form by Pt/TiO like this 2with pure TiO 2the homostyructure of bilayer film composition, thickness is about 180nm;
[6], at the thick BP212 eurymeric photoresist of the first spin coating one deck 1.5 μ m in homostyructure surface preparing, be placed on hot plate under 80 ℃ of conditions front baking 15 minutes; Then on mask aligner, to refer to that the mask plate of electrode pattern complementary structure and the photoresist layer of spin coating adjust close contact behind position with inserting, expose and develop 40 seconds after 55 seconds, with drying up after deionized water rinsing, be placed on hot plate under 120 ℃ of conditions post bake and after 20 minutes, on film, obtain needed photoresist and insert and refer to electrode pattern; Then adopt radiofrequency magnetron sputtering technology to prepare in the above Au electrode, sputtering chamber is evacuated to 3.0 × 10 -3logical argon gas after Pa, sputtering pressure is 1.2Pa, and sputtering power is 100W, and sputtering time is 6 minutes; Finally with acetone by photoresist and metal is above ultrasonic etches away, ultrasonic power is 60W, the interdigital electrode thickness obtaining is 120nm, electrode width is 20 μ m, electrode spacing is 20 μ m; Prepare the TiO with precious metal doping by above step 2/ TiO 2the ultraviolet light detector of homostyructure.With pure TiO 2ultraviolet detector is compared photoelectric current and has been improved approximately 67 times, and the rise time has shortened 2.65 times.
In above-described embodiment, I-V curve is to measure with Keithley2601.All tests are all carried out under atmospheric environment.
Above said content, is only the specific embodiment of the present invention, can not limit scope of the invention process with it, and the impartial changes and improvements of generally carrying out according to patent claim of the present invention, all should still belong to the scope that patent of the present invention contains.

Claims (9)

1. one kind has the TiO of precious metal doping 2/ TiO 2the ultraviolet detector of homostyructure, is characterized in that: successively by the TiO of substrate, precious metal doping 2thin layer, pure TiO 2thin layer, metal interdigital electrode composition, wherein, the TiO of precious metal doping 2in thin layer, the molar concentration of precious metal doping is 0.008～0.04mol/L.
2. a kind of TiO with precious metal doping as claimed in claim 1 2/ TiO 2the ultraviolet detector of homostyructure, is characterized in that: the TiO of precious metal doping 2the thickness of thin layer is 150～210nm, pure TiO 2the thickness of thin layer is 30～90nm, and the thickness of metal interdigital electrode is 50～150nm, and electrode width is 5～60 μ m, and electrode spacing is 5～60 μ m.
3. a kind of TiO with precious metal doping as claimed in claim 1 or 2 2/ TiO 2the ultraviolet detector of homostyructure, is characterized in that: substrate is quartz, sapphire or silicon, and noble metal is Pt, Au, Pd or Rh, and metal interdigital electrode is Au or Pt.
4. one kind has the TiO of precious metal doping 2/ TiO 2the preparation method of the ultraviolet detector of homostyructure, its step is as follows:
[1] precious metal doping TiO 2the preparation of film
The TiO of 5～7 layers of precious metal doping of spin coating on substrate after cleaning 2colloidal sol, the technique of every layer is: rotating speed 2000～3000rpm, even glue time 10～20s dries 5～7 minutes after even glue under 110～130 ℃ of conditions, then in air cooling 2～4 minutes; Finally by the substrate of good this colloidal sol of spin coating sintering 1.5～3 hours under 550～650 ℃ of conditions, thereby on substrate, form the TiO of precious metal doping 2film, thickness is 150～210nm;
[2] preparation of homostyructure
At the TiO of precious metal doping 21～3 layer of TiO of spin coating on film 2colloidal sol, the technique of every layer is: rotating speed 2000～3000rpm, even glue time 10～20s dries 5～7 minutes after even glue under 110～130 ℃ of conditions, then in air cooling 2～4 minutes; Finally by good spin coating TiO 2the substrate of colloidal sol sintering 1.5～3 hours under 550～650 ℃ of conditions, thus the TiO by precious metal doping on substrate, obtained 2with pure TiO 2the homostyructure of bilayer film composition;
[3] preparation of metal interdigital electrode
In the homostyructure surface metal interdigital electrode preparing, thickness of electrode is 50～150nm, and electrode width is 5～60 μ m, and electrode spacing is 5～60 μ m; Finally prepare the TiO with precious metal doping by above step 2/ TiO 2the ultraviolet light detector of homostyructure.
5. the TiO with precious metal doping as claimed in claim 4 2/ TiO 2the preparation method of the ultraviolet detector of homostyructure, is characterized in that: TiO 2the preparation of colloidal sol, under room temperature, in the 5～10mL butyl titanate that 5～10mL acetic acid, 5～10mL acetylacetone,2,4-pentanedione, 5～10mL deionized water is splashed into continuous stirring successively and mix and the mixed liquor of 80～100mL ethanol, continue stirring until obtain the orange red colloidal sol of homogeneous transparent, ageing obtained TiO after 24～48 hours 2colloidal sol.
6. the TiO with precious metal doping as claimed in claim 4 2/ TiO 2the preparation method of the ultraviolet detector of homostyructure, is characterized in that: precious metal doping TiO 2the preparation of colloidal sol, is the salt of getting the noble metal of 0.1～0.3g, is added in the mixed liquor of 4mL～8mL water and 4～8mL ethanol, is stirred to abundant dissolving, the mixed liquor after dissolving is added to the TiO of the 5～15mL taking out from step [1] 2in colloidal sol, 70～90 ℃ of heating water bath stirring 2～4h obtain the TiO of precious metal doping 2colloidal sol.
7. the TiO with precious metal doping as claimed in claim 6 2/ TiO 2the preparation method of the ultraviolet detector of homostyructure, is characterized in that: the salt of noble metal is chloroplatinic acid, gold chloride, palladium bichloride or radium chloride.
8. the TiO with precious metal doping as claimed in claim 4 2/ TiO 2the preparation method of the ultraviolet detector of homostyructure, it is characterized in that: insert the preparation that refers to electrode, be at the thick BP212 eurymeric photoresist of first spin coating one deck 1～3 μ m in homostyructure surface preparing, be placed on hot plate under 70 ℃～90 ℃ conditions front baking 10～20 minutes; Then on mask aligner, to refer to that the mask plate of electrode pattern complementary structure and the photoresist layer of spin coating adjust close contact behind position with inserting, expose and develop 30～50 seconds after 50～60 seconds, with drying up after deionized water rinsing, then be placed on hot plate under 110 ℃～130 ℃ conditions post bake and after 15～25 minutes, on homostyructure layer, obtain needed photoresist and insert and refer to electrode pattern; Then adopt radiofrequency magnetron sputtering technology to prepare in the above electrode, sputtering chamber is evacuated to 2.0 × 10 -3～8.0 × 10 -3logical argon gas after Pa, sputtering pressure is 0.5～1.4Pa, and sputtering power is 60～110W, and sputtering time is 3～8 minutes; Finally with acetone by photoresist and metal is above ultrasonic etches away, ultrasonic power is 50～70W, thereby obtains metal interdigital electrode.
9. the TiO with precious metal doping as claimed in claim 4 2/ TiO 2the preparation method of the ultraviolet detector of homostyructure, is characterized in that: metal interdigital electrode is Au or Pt.
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